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Impurity scattering limited momentum relaxation time in a quantum well wire

Jerry W. Brown; Harold N. Spector

J. Vac. Sci. Technol. B 4, 453–458 (1986) https://doi.org/10.1116/1.583403

Abstract

View articletitled, Impurity scattering limited momentum relaxation time in a quantum well wire

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Chemical sputtering of silicon by F⁺, Cl⁺, and Br⁺ ions: Reactive spot model for reactive ion etching

Shin’ichi Tachi; Sadayuki Okudaira

J. Vac. Sci. Technol. B 4, 459–467 (1986) https://doi.org/10.1116/1.583404

Abstract

View articletitled, Chemical sputtering of silicon by F+, Cl+, and Br+ ions: Reactive spot model for reactive ion etching

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Silicon doping effects in reactive plasma etching

Young H. Lee; Mao‐Min Chen

J. Vac. Sci. Technol. B 4, 468–475 (1986) https://doi.org/10.1116/1.583405

Abstract

View articletitled, Silicon doping effects in reactive plasma etching

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Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al_0.25/Ga_0.75As/GaAs and Al_0.48In_0.52As/Ga_0.47In_0.53As heterostructures: A behavioral comparison

P. Zwicknagl; S. D. Mukherjee; P. M. Capani; H. Lee; H. T. Griem; L. Rathbun; J. D. Berry; W. L. Jones; L. F. Eastman

J. Vac. Sci. Technol. B 4, 476–484 (1986) https://doi.org/10.1116/1.583406

Abstract

View articletitled, Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: A behavioral comparison

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Ruthenium‐induced surface states on n‐GaAs surfaces

Matthias Ludwig; Günter Heymann; Peter Janietz

J. Vac. Sci. Technol. B 4, 485–492 (1986) https://doi.org/10.1116/1.583407

Abstract

View articletitled, Ruthenium‐induced surface states on n‐GaAs surfaces

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A precise and automatic very large scale integrated circuit pattern linewidth measurement method using a scanning electron microscope

M. Miyoshi; M. Kanoh; H. Yamaji; K. Okumura

J. Vac. Sci. Technol. B 4, 493–499 (1986) https://doi.org/10.1116/1.583408

Abstract

View articletitled, A precise and automatic very large scale integrated circuit pattern linewidth measurement method using a scanning electron microscope

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Effect of Sn in plasma copolymerized methylmethacrylate and tetramethyltin resist on plasma development for x‐ray irradiation

Masaru Hori; Shuzo Hattori; Takashi Yoneda; Shinzo Morita

J. Vac. Sci. Technol. B 4, 500–504 (1986) https://doi.org/10.1116/1.583409

Abstract

View articletitled, Effect of Sn in plasma copolymerized methylmethacrylate and tetramethyltin resist on plasma development for x‐ray irradiation

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Reproducible temperature measurement of GaAs substrates during molecular beam epitaxial growth

S. L. Wright; R. F. Marks; W. I. Wang

J. Vac. Sci. Technol. B 4, 505–506 (1986) https://doi.org/10.1116/1.583410

View articletitled, Reproducible temperature measurement of GaAs substrates during molecular beam epitaxial growth

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Observation of strong localization effects in (AlGa)As–GaAs two‐dimensional electron gas structures at low magnetic fields

C. T. Foxon; J. J. Harris; R. G. Wheeler; D. E. Lacklison

J. Vac. Sci. Technol. B 4, 511–514 (1986) https://doi.org/10.1116/1.583411

Abstract

View articletitled, Observation of strong localization effects in (AlGa)As–GaAs two‐dimensional electron gas structures at low magnetic fields

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Summary Abstract: Growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation

S. Subbanna; H. Kroemer; J. L. Merz

J. Vac. Sci. Technol. B 4, 515–516 (1986) https://doi.org/10.1116/1.583412

View articletitled, Summary Abstract: Growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation

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Segregated AlGaAs(110) grown by molecular beam epitaxy

W. I. Wang; T. S. Kuan; J. C. Tsang; L. L. Chang; L. Esaki

J. Vac. Sci. Technol. B 4, 517–518 (1986) https://doi.org/10.1116/1.583413

Abstract

View articletitled, Segregated AlGaAs(110) grown by molecular beam epitaxy

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Summary Abstract: Si incorporation and segregation in Ga_1−xAl_xAs(100) films grown by molecular beam epitaxy

A. Rockett; J. Klem; S. A. Barnett; J. E. Greene; H. Morkoç

J. Vac. Sci. Technol. B 4, 519–520 (1986) https://doi.org/10.1116/1.583414

View articletitled, Summary Abstract: Si incorporation and segregation in Ga1−xAlxAs(100) films grown by molecular beam epitaxy

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Summary Abstract: State‐of‐the‐art AlGaAs alloys by antimony doping

T. M. Kerr; T. D. McLean; D. I. Westwood; J. D. Medland; S. R. Blight; C. E. C. Wood

J. Vac. Sci. Technol. B 4, 521–522 (1986) https://doi.org/10.1116/1.583415

View articletitled, Summary Abstract: State‐of‐the‐art AlGaAs alloys by antimony doping

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Summary Abstract: Optical properties of Al_xGa₁_−xAs grown by molecular beam epitaxy

D. C. Reynolds; C. W. Litton; K. K. Bajaj; P. W. Yu; Jasprit Singh; P. J. Pearah; W. T. Masselink; T. Henderson; J. Klem; H. Morkoç

J. Vac. Sci. Technol. B 4, 523–524 (1986) https://doi.org/10.1116/1.583416

View articletitled, Summary Abstract: Optical properties of AlxGa1−xAs grown by molecular beam epitaxy

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Optical properties of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy

P. J. Pearah; W. T. Masselink; T. Henderson; C. K. Peng; H. Morkoç; G. D. Sanders; Yia‐Chung Chang

J. Vac. Sci. Technol. B 4, 525–527 (1986) https://doi.org/10.1116/1.583417

Abstract

View articletitled, Optical properties of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy

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Lattice‐mismatched heteroepitaxial interface of GaAs_ySb_1−y on GaAs substrates

H. Cheng; T. Koyanagi; A. G. Milnes

J. Vac. Sci. Technol. B 4, 528–531 (1986) https://doi.org/10.1116/1.583418

Abstract

View articletitled, Lattice‐mismatched heteroepitaxial interface of GaAsySb1−y on GaAs substrates

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Summary Abstract: GaAs_1−ySb_y growth by molecular beam epitaxy

T. M. Kerr; T. D. McLean; D. I. Westwood; J. D. Medland; C. E. C. Wood; I. J. Murgatroyd

J. Vac. Sci. Technol. B 4, 532–533 (1986) https://doi.org/10.1116/1.583419

View articletitled, Summary Abstract: GaAs1−ySby growth by molecular beam epitaxy

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Summary Abstract: The influence of molecular beam epitaxy growth conditions on the Ga–Al–In–As ternary and quaternary systems

E. G. Scott; D. A. Andrews; G. J. Davies

J. Vac. Sci. Technol. B 4, 534–535 (1986) https://doi.org/10.1116/1.583420

View articletitled, Summary Abstract: The influence of molecular beam epitaxy growth conditions on the Ga–Al–In–As ternary and quaternary systems

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The growth of high mobility InGaAs and InAlAs layers by molecular beam epitaxy

Wai Lee; Clifton G. Fonstad

J. Vac. Sci. Technol. B 4, 536–538 (1986) https://doi.org/10.1116/1.583421

Abstract

View articletitled, The growth of high mobility InGaAs and InAlAs layers by molecular beam epitaxy

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Summary Abstract: Growth and characterization of an InAs–GaAs superlattice alloy

M. C. Tamargo; R. E. Nahory; P. Voisin; M. Voos; R. Hull; A. Y. Cho

J. Vac. Sci. Technol. B 4, 539 (1986) https://doi.org/10.1116/1.583422

View articletitled, Summary Abstract: Growth and characterization of an InAs–GaAs superlattice alloy

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Investigation of molecular beam epitaxial In_0.53Ga_0.47As regrown on liquid phase epitaxial In_0.53Ga_0.47As/InP

Y. Nashimoto; S. Dhar; W. P. Hong; A. Chin; P. Berger; P. K. Bhattacharya

J. Vac. Sci. Technol. B 4, 540–542 (1986) https://doi.org/10.1116/1.583423

Abstract

View articletitled, Investigation of molecular beam epitaxial In0.53Ga0.47As regrown on liquid phase epitaxial In0.53Ga0.47As/InP

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Summary Abstract: Mn redistribution in doped GaInAs

A. S. Brown; G. W. Wicks; L. F. Eastman

J. Vac. Sci. Technol. B 4, 543–544 (1986) https://doi.org/10.1116/1.583424

View articletitled, Summary Abstract: Mn redistribution in doped GaInAs

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Summary Abstract: Theoretical and experimental capacitance–voltage behavior of modulation‐doped Al_0.3Ga_0.7As/GaAs heterojunctions

George B. Norris; D. C. Look; W. Kopp; J. Klem; H. Morkoç

J. Vac. Sci. Technol. B 4, 545 (1986) https://doi.org/10.1116/1.583425

View articletitled, Summary Abstract: Theoretical and experimental capacitance–voltage behavior of modulation‐doped Al0.3Ga0.7As/GaAs heterojunctions

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Trapping mechanisms in device‐quality molecular beam epitaxial Al_xGa₁_−xAs and GaAs–Al_xGa₁_−xAs modulation doped heterostructures

S. Dhar; W. P. Hong; P. K. Bhattacharya

J. Vac. Sci. Technol. B 4, 546–549 (1986) https://doi.org/10.1116/1.583426

Abstract

View articletitled, Trapping mechanisms in device‐quality molecular beam epitaxial AlxGa1−xAs and GaAs–AlxGa1−xAs modulation doped heterostructures

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Summary Abstract: Deep levels in AlGaAs/GaAs modulation‐doped structures grown by molecular beam epitaxy

A. J. Valois; G. Y. Robinson

J. Vac. Sci. Technol. B 4, 550 (1986) https://doi.org/10.1116/1.583427

View articletitled, Summary Abstract: Deep levels in AlGaAs/GaAs modulation‐doped structures grown by molecular beam epitaxy

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Optical characterization of molecular beam epitaxial GaAs/Al_xGa_1−xAs multi‐quantum‐well structures using a very low power, narrow band, tunable pulsed dye laser

M. Naganuma; J. J. Song; C. H. Chao; Y. B. Kim; W. T. Masselink; H. Morkoç

J. Vac. Sci. Technol. B 4, 551–553 (1986) https://doi.org/10.1116/1.583428

Abstract

View articletitled, Optical characterization of molecular beam epitaxial GaAs/AlxGa1−xAs multi‐quantum‐well structures using a very low power, narrow band, tunable pulsed dye laser

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Summary Abstract: A comparative study of photovoltaic and photoluminescence spectra of undoped GaAs–Al_0.25Ga_0.75As multiple quantum well structures grown by molecular beam epitaxy

P. W. Yu; D. C. Reynolds; K. K. Bajaj; C. W. Litton; Jasprit Singh; C. K. Peng; T. Henderson; H. Morkoç

J. Vac. Sci. Technol. B 4, 554–555 (1986) https://doi.org/10.1116/1.583429

View articletitled, Summary Abstract: A comparative study of photovoltaic and photoluminescence spectra of undoped GaAs–Al0.25Ga0.75As multiple quantum well structures grown by molecular beam epitaxy

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Summary Abstract: Composition of AlGaAs films grown by molecular beam epitaxy

Peter C. Kemeny

J. Vac. Sci. Technol. B 4, 556–557 (1986) https://doi.org/10.1116/1.583430

View articletitled, Summary Abstract: Composition of AlGaAs films grown by molecular beam epitaxy

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Summary Abstract: Theoretical studies of alloy clustering and interface roughness in InAs, GaAs, and AlAs based heterostructures grown by molecular beam epitaxy

Jasprit Singh; B. Davies; S. Dudley; K. K. Bajaj

J. Vac. Sci. Technol. B 4, 558–559 (1986) https://doi.org/10.1116/1.583431

View articletitled, Summary Abstract: Theoretical studies of alloy clustering and interface roughness in InAs, GaAs, and AlAs based heterostructures grown by molecular beam epitaxy

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Arsenic‐induced intensity oscillations in reflection high‐energy electron diffraction measurements

B. F. Lewis; R. Fernandez; A. Madhukar; F. J. Grunthaner

J. Vac. Sci. Technol. B 4, 560–563 (1986) https://doi.org/10.1116/1.583432

Abstract

View articletitled, Arsenic‐induced intensity oscillations in reflection high‐energy electron diffraction measurements

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Elimination of flux transients in molecular beam epitaxy

P. A. Maki; S. C. Palmateer; A. R. Calawa; B. R. Lee

J. Vac. Sci. Technol. B 4, 564–567 (1986) https://doi.org/10.1116/1.583374

Abstract

View articletitled, Elimination of flux transients in molecular beam epitaxy

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Material effects on the cracking efficiency of molecular beam epitaxy arsenic cracking furnaces

Reuy‐Lin Lee; William J. Schaffer; Young G. Chai; David Liu; James S. Harris

J. Vac. Sci. Technol. B 4, 568–570 (1986) https://doi.org/10.1116/1.583375

Abstract

View articletitled, Material effects on the cracking efficiency of molecular beam epitaxy arsenic cracking furnaces

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An indium‐free mount for GaAs substrate heating during molecular beam epitaxial growth

D. E. Mars; J. N. Miller

J. Vac. Sci. Technol. B 4, 571–573 (1986) https://doi.org/10.1116/1.583376

Abstract

View articletitled, An indium‐free mount for GaAs substrate heating during molecular beam epitaxial growth

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Molecular beam epitaxy of gallium arsenide using direct radiative substrate heating

E. S. Hellman; P. M. Pitner; A. Harwit; D. Liu; G. W. Yoffe; J. S. Harris, Jr.; B. Caffee; T. Hierl

J. Vac. Sci. Technol. B 4, 574–577 (1986) https://doi.org/10.1116/1.583377

Abstract

View articletitled, Molecular beam epitaxy of gallium arsenide using direct radiative substrate heating

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Lead calcium telluride grown by molecular beam epitaxy

D. L. Partin; B. M. Clemens; D. E. Swets; C. M. Thrush

J. Vac. Sci. Technol. B 4, 578–580 (1986) https://doi.org/10.1116/1.583378

Abstract

View articletitled, Lead calcium telluride grown by molecular beam epitaxy

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Summary Abstract: Growth of CdTe and HgCdTe by molecular beam epitaxy

K. A. Harris; S. Hwang; D. K. Blanks; J. W. Cook, Jr.; J. F. Schetzina; N. Otsuka

J. Vac. Sci. Technol. B 4, 581–582 (1986) https://doi.org/10.1116/1.583379

View articletitled, Summary Abstract: Growth of CdTe and HgCdTe by molecular beam epitaxy

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Summary Abstract: (100)‐oriented wide gap II–VI superlattices

L. A. Kolodziejski; R. L. Gunshor; R. Venkatasubramanian; T. C. Bonsett; R. Frohne; S. Datta; N. Otsuka; R. B. Bylsma; W. M. Becker; A. V. Nurmikko

J. Vac. Sci. Technol. B 4, 583–584 (1986) https://doi.org/10.1116/1.583380

View articletitled, Summary Abstract: (100)‐oriented wide gap II–VI superlattices

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Molecular beam epitaxial growth and characterization of Cd₁_−xZn_xTe, Hg₁_−xCd_xTe, Hg₁_−xMn_xTe, and Hg₁_−xZn_xTe on GaAs(100)

J. P. Faurie; J. Reno; S. Sivananthan; I. K. Sou; X. Chu; M. Boukerche; P. S. Wijewarnasuriya

J. Vac. Sci. Technol. B 4, 585–589 (1986) https://doi.org/10.1116/1.583381

Abstract

View articletitled, Molecular beam epitaxial growth and characterization of Cd1−xZnxTe, Hg1−xCdxTe, Hg1−xMnxTe, and Hg1−xZnxTe on GaAs(100)

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Kinetics of the formation of normal and inverted molecular beam epitaxial interfaces: A reflection high‐energy electron diffraction dynamics study of GaAs/Al_xGa_1−xAs(100) multiple quantum wells

M. Y. Yen; T. C. Lee; P. Chen; A. Madhukar

J. Vac. Sci. Technol. B 4, 590–593 (1986) https://doi.org/10.1116/1.583382

Abstract

View articletitled, Kinetics of the formation of normal and inverted molecular beam epitaxial interfaces: A reflection high‐energy electron diffraction dynamics study of GaAs/AlxGa1−xAs(100) multiple quantum wells

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Reflection high‐energy electron diffraction intensity oscillation study of Ga desorption from molecular beam epitaxially grown Al_xGa_1−xAs

J. Ralston; G. W. Wicks; L. F. Eastman

J. Vac. Sci. Technol. B 4, 594–597 (1986) https://doi.org/10.1116/1.583383

Abstract

View articletitled, Reflection high‐energy electron diffraction intensity oscillation study of Ga desorption from molecular beam epitaxially grown AlxGa1−xAs

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Summary Abstract: Molecular beam epitaxial growth of InAsSb alloys and superlattices

L. R. Dawson

J. Vac. Sci. Technol. B 4, 598–599 (1986) https://doi.org/10.1116/1.583384

View articletitled, Summary Abstract: Molecular beam epitaxial growth of InAsSb alloys and superlattices

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Summary Abstract: Molecular beam epitaxial growth of abrupt InAsSb/GaSb heterostructures and superlattices lattice‐matched to GaSb(100)

T. H. Chiu; W. T. Tsang; J. A. Ditzenberger

J. Vac. Sci. Technol. B 4, 600 (1986) https://doi.org/10.1116/1.583385

View articletitled, Summary Abstract: Molecular beam epitaxial growth of abrupt InAsSb/GaSb heterostructures and superlattices lattice‐matched to GaSb(100)

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Summary Abstract: Controlled n‐type doping of GaSb

T. D. McLean; T. M. Kerr; D. I. Westwood; C. E. C. Wood; D. F. Howell

J. Vac. Sci. Technol. B 4, 601–602 (1986) https://doi.org/10.1116/1.583386

View articletitled, Summary Abstract: Controlled n‐type doping of GaSb

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Summary Abstract: Double heterostructure optoelectronic switching devices using molecular beam epitaxy

G. W. Taylor; J. G. Simmons; R. S. Mand; A. Y. Cho

J. Vac. Sci. Technol. B 4, 603–604 (1986) https://doi.org/10.1116/1.583387

View articletitled, Summary Abstract: Double heterostructure optoelectronic switching devices using molecular beam epitaxy

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Current–voltage characteristics of n‐AlGaAs/p‐GaAs heterojunction diodes

N. Chand; R. Fischer; J. Klem; H. Morkoç

J. Vac. Sci. Technol. B 4, 605–608 (1986) https://doi.org/10.1116/1.583388

Abstract

View articletitled, Current–voltage characteristics of n‐AlGaAs/p‐GaAs heterojunction diodes

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Controlled growth of GaAs layers for monolithic hot electron transistors

J. M. Woodcock; J. J. Harris; J. M. Shannon

J. Vac. Sci. Technol. B 4, 609–611 (1986) https://doi.org/10.1116/1.583389

Abstract

View articletitled, Controlled growth of GaAs layers for monolithic hot electron transistors

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A novel four‐terminal device grown by molecular beam epitaxy

Y. H. Lo; J. M. Hong; S. Wang

J. Vac. Sci. Technol. B 4, 612–614 (1986) https://doi.org/10.1116/1.583390

Abstract

View articletitled, A novel four‐terminal device grown by molecular beam epitaxy

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Novel self‐aligned gate Al_xGa_1−xAs/n‐GaAs superlattice modulation‐doped field‐effect transistors

J. K. Abrokwah; N. C. Cirillo, Jr.; D. Arch; R. R. Daniels; M. Hibbs‐Brenner; A. Fraasch; P. Vold; P. Joslyn

J. Vac. Sci. Technol. B 4, 615–617 (1986) https://doi.org/10.1116/1.583391

Abstract

View articletitled, Novel self‐aligned gate AlxGa1−xAs/n‐GaAs superlattice modulation‐doped field‐effect transistors

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Effect of epitaxial layer design on the microwave performance of high electron mobility transistors

S. C. Palmateer; U. K. Mishra; P. C. Chao; P. M. Smith; K. H. G. Duh; J. C. M. Hwang

J. Vac. Sci. Technol. B 4, 618–621 (1986) https://doi.org/10.1116/1.583392

Abstract

View articletitled, Effect of epitaxial layer design on the microwave performance of high electron mobility transistors

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Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal‐insulator‐semiconductor field‐effect transistors

T. Ohashi; D. P. Bour; T. Itoh; J. D. Berry; S. R. Jost; G. W. Wicks; L. F. Eastman

J. Vac. Sci. Technol. B 4, 622–624 (1986) https://doi.org/10.1116/1.583393

Abstract

View articletitled, Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal‐insulator‐semiconductor field‐effect transistors

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Arsenic passivation of GaAs and pyrolytic decomposition of organotin compounds for in situ selected area doping of GaAs molecular beam epitaxy

S. P. Kowalczyk; D. L. Miller

J. Vac. Sci. Technol. B 4, 625–628 (1986) https://doi.org/10.1116/1.583394

Abstract

View articletitled, Arsenic passivation of GaAs and pyrolytic decomposition of organotin compounds for in situ selected area doping of GaAs molecular beam epitaxy

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Summary Abstract: Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy

J. M. Hong; S. Wang; J. D. Flood; J. L. Merz; T. Sands; J. Washburn

J. Vac. Sci. Technol. B 4, 629–630 (1986) https://doi.org/10.1116/1.583395

View articletitled, Summary Abstract: Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy

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A Mott mixer diode

J. P. Nagle; L. A. Hing; T. M. Kerr; J. G. Summers

J. Vac. Sci. Technol. B 4, 631–632 (1986) https://doi.org/10.1116/1.583396

Abstract

View articletitled, A Mott mixer diode

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Summary Abstract: Incorporation of GaAs/AlAs superlattices for improvement of molecular beam epitaxy materials: GaAs and modulation‐doped GaAs/AlGaAs

C. Webb; Y. G. Chai; S. G. Bandy; C. Nishimoto; A. Bivas

J. Vac. Sci. Technol. B 4, 633–634 (1986) https://doi.org/10.1116/1.583581

View articletitled, Summary Abstract: Incorporation of GaAs/AlAs superlattices for improvement of molecular beam epitaxy materials: GaAs and modulation‐doped GaAs/AlGaAs

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Summary Abstract: Strain effects in Cd_1−xMn_xTe–CdTe superlattices

D. K. Blanks; R. N. Bicknell; N. C. Giles‐Taylor; J. F. Schetzina; A. Petrou; J. Warnock

J. Vac. Sci. Technol. B 4, 635–636 (1986) https://doi.org/10.1116/1.583582

View articletitled, Summary Abstract: Strain effects in Cd1−xMnxTe–CdTe superlattices

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Structural and electrical properties of lattice‐matched Ca_0.44Sr_0.56F₂/GaAs structures grown by molecular beam epitaxy

C. W. Tu; S. J. Wang; J. M. Phillips; J. M. Gibson; R. A. Stall; R. J. Wunder

J. Vac. Sci. Technol. B 4, 637–640 (1986) https://doi.org/10.1116/1.583583

Abstract

View articletitled, Structural and electrical properties of lattice‐matched Ca0.44Sr0.56F2/GaAs structures grown by molecular beam epitaxy

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Summary Abstract: Growth of device‐quality GaAs and (Al,Ga)As on (211)‐oriented silicon substrates, with thin (0.1 μm) superlattice buffer layers

Parvez N. Uppal; Herbert Kroemer

J. Vac. Sci. Technol. B 4, 641 (1986) https://doi.org/10.1116/1.583584

View articletitled, Summary Abstract: Growth of device‐quality GaAs and (Al,Ga)As on (211)‐oriented silicon substrates, with thin (0.1 μm) superlattice buffer layers

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Structural properties of GaAs on Si and Ge substrates

D. A. Neumann; Xiaomei Zhu; H. Zabel; T. Henderson; R. Fischer; W. T. Masselink; J. Klem; C. K. Peng; H. Morkoç

J. Vac. Sci. Technol. B 4, 642–644 (1986) https://doi.org/10.1116/1.583585

Abstract

View articletitled, Structural properties of GaAs on Si and Ge substrates

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Study of solid phase and molecular beam epitaxial cobalt silicide films on Si〈111〉 using electron energy loss spectroscopy

E. de Fresart; Y. C. Kao; K. L. Wang

J. Vac. Sci. Technol. B 4, 645–648 (1986) https://doi.org/10.1116/1.583586

Abstract

View articletitled, Study of solid phase and molecular beam epitaxial cobalt silicide films on Si〈111〉 using electron energy loss spectroscopy

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Summary Abstract: Schottky barrier height measurements of type A and type B NiSi₂ on Si

R. J. Hauenstein; T. E. Schlesinger; T. C. McGill; B. D. Hunt; L. J. Schowalter

J. Vac. Sci. Technol. B 4, 649–650 (1986) https://doi.org/10.1116/1.583587

View articletitled, Summary Abstract: Schottky barrier height measurements of type A and type B NiSi2 on Si

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Summary Abstract: Temperature dependence of the electron concentration and spatial distribution in n‐Al_0.28Ga_0.72As/GaAs heterostructures

Stefan P. Svensson; Alan W. Swanson

J. Vac. Sci. Technol. B 4, 651–652 (1986) https://doi.org/10.1116/1.583588

View articletitled, Summary Abstract: Temperature dependence of the electron concentration and spatial distribution in n‐Al0.28Ga0.72As/GaAs heterostructures

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Summary Abstract: Aharonov–Bohm effect in a molecular beam epitaxially grown double quantum well

M. R. Melloch; S. Bandyopadhyay; S. Datta; R. Noren; M. S. Lundstrom; K. Tan; T. Dungan; R. G. Reifenberger; M. Vaziri

J. Vac. Sci. Technol. B 4, 653–654 (1986) https://doi.org/10.1116/1.583589

View articletitled, Summary Abstract: Aharonov–Bohm effect in a molecular beam epitaxially grown double quantum well

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Summary Abstract: Lateral p–n junction formation in GaAs molecular beam epitaxy by crystal‐plane dependent doping

D. L. Miller

J. Vac. Sci. Technol. B 4, 655 (1986) https://doi.org/10.1116/1.583590

View articletitled, Summary Abstract: Lateral p–n junction formation in GaAs molecular beam epitaxy by crystal‐plane dependent doping

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Summary Abstract: New quantum transport phenomena and superlattice devices in molecular beam epitaxially grown AlInAs/GaInAs heterostructures

F. Capasso; K. Mohammed; A. Y. Cho

J. Vac. Sci. Technol. B 4, 656–657 (1986) https://doi.org/10.1116/1.583591

View articletitled, Summary Abstract: New quantum transport phenomena and superlattice devices in molecular beam epitaxially grown AlInAs/GaInAs heterostructures

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Anomalous I–V characteristics of semiconductor heterojunction diodes due to transmission resonance

Yasuhito Zohta; Kunio Tsuda; Yoshiko Someya Hiraoka

J. Vac. Sci. Technol. B 4, 658–660 (1986) https://doi.org/10.1116/1.583592

Abstract

View articletitled, Anomalous I–V characteristics of semiconductor heterojunction diodes due to transmission resonance

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Summary Abstract: Ge/Si heterojunction Ohmic contacts formed by molecular beam epitaxy

M. J. Hafich; R. L. Gillenwater; G. Y. Robinson; P. Sheldon

J. Vac. Sci. Technol. B 4, 661 (1986) https://doi.org/10.1116/1.583593

View articletitled, Summary Abstract: Ge/Si heterojunction Ohmic contacts formed by molecular beam epitaxy

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Summary Abstract: In situ grown semiconductor/metal/semiconductor structures: Molecular beam epitaxial growth of tungsten layers embedded in single‐crystal GaAs

J. P. Harbison; D. M. Hwang; J. Levkoff; G. E. Derkits, Jr.

J. Vac. Sci. Technol. B 4, 662–663 (1986) https://doi.org/10.1116/1.583594

View articletitled, Summary Abstract: In situ grown semiconductor/metal/semiconductor structures: Molecular beam epitaxial growth of tungsten layers embedded in single‐crystal GaAs

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