Skip Nav Destination

Issues

Select Year

Issue

Volume 39, Issue 3

May 2021

All Issues

Cover Image

Cover Image

ISSN 2166-2746

EISSN 2166-2754

In this Issue

Letters
ARTICLES

Letters

Electronic structure and field emission characteristics of a new kind of BeO nanotubes: A first-principles study

Shunfu Xu; Weihui Liu; Ziliang Zhu; Chun Li; Guang Yuan

J. Vac. Sci. Technol. B 39, 030601 (2021) https://doi.org/10.1116/6.0000945

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Improvement of silicon microdisk resonators with movable waveguides by hydrogen annealing treatment

Taiyu Okatani; Yuichi Sato; Kaoru Imai; Kazuhiro Hane; Yoshiaki Kanamori

J. Vac. Sci. Technol. B 39, 030602 (2021) https://doi.org/10.1116/6.0000971

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

ARTICLES

Electronic and Optoelectronic Materials, Devices and Processing

Cr and CrO_x etching using SF₆ and O₂ plasma

Vy Thi Hoang Nguyen; Flemming Jensen; Jörg Hübner; Evgeniy Shkondin; Roy Cork; Kechun Ma; Pele Leussink; Wim De Malsche; Henri Jansen

J. Vac. Sci. Technol. B 39, 032201 (2021) https://doi.org/10.1116/6.0000922

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Behavior of photoexcited electrons in hole-transport material-free perovskite solar cells

Makoto Hirai; Yuji Takagi; Naoyuki Fujita

J. Vac. Sci. Technol. B 39, 032202 (2021) https://doi.org/10.1116/6.0000913

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors

Manh-Cuong Nguyen; An Hoang-Thuy Nguyen; Jiyong Yim; Anh-Duy Nguyen; Mingyu Kim; Jeonghan Kim; Jongyeon Beak; Rino Choi

J. Vac. Sci. Technol. B 39, 032203 (2021) https://doi.org/10.1116/6.0000906

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Fully vertical gallium nitride trench MOSFETs fabricated with metal-free gate first process

Kevin Dannecker; Jens Baringhaus

J. Vac. Sci. Technol. B 39, 032204 (2021) https://doi.org/10.1116/6.0000980

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effects of thickness on the wettability and electrical properties of Sn thin films

Jatinder Kaur; Ravish K. Jain; Atul Khanna; Amit K. Chawla

J. Vac. Sci. Technol. B 39, 032205 (2021) https://doi.org/10.1116/6.0001026

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Lithography

Nanometer-scale capillary-driven flow and molecular weight govern polymer nanostructure deposition from a heated tip

Sihan Chen; William P. King

J. Vac. Sci. Technol. B 39, 032601 (2021) https://doi.org/10.1116/6.0000958

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Estimation of critical dimension and line edge roughness using a neural network

Dehua Li; Soo-Young Lee; Jin Choi; Seom-Beom Kim; Chan-Uk Jeon

J. Vac. Sci. Technol. B 39, 032602 (2021) https://doi.org/10.1116/6.0000806

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Suppression of resist pattern collapse by crosslinker in ultraviolet nanoimprinting involving sequential infiltration synthesis with trimethylaluminum

Chiaki Miyajima; Shunya Ito; Masaru Nakagawa

J. Vac. Sci. Technol. B 39, 032603 (2021) https://doi.org/10.1116/6.0001014

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Nanoscale Science and Technology

Determining the field enhancement factors of various field electron emitters with high numerical accuracy

In Special Collection: Papers from the 33rd International Vacuum Nanoelectronics Conference (33rd IVNC 2020)

Fernando F. Dall’Agnol; Sergey V. Filippov; Eugeni O. Popov; Anatoly G. Kolosko; Thiago A. de Assis

J. Vac. Sci. Technol. B 39, 032801 (2021) https://doi.org/10.1116/6.0000949

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Supplementary Material

Open the PDF for in another window

Organotrialkoxysilane-mediated synthesis of Ni–Pd nanocatalysts at lower concentrations of noble metal: Catalysts for faster hydrogen evolution kinetics

Prem C. Pandey; Shubhangi Shukla; Roger J. Narayan

J. Vac. Sci. Technol. B 39, 032802 (2021) https://doi.org/10.1116/6.0000881

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

MEMS and NEMS

Thin films residual stress profile evaluation using test microstructures: Illustrated on an example of AlN film

Parsoua A. Sohi; Irina Stateikina; Mojtaba Kahrizi

J. Vac. Sci. Technol. B 39, 033001 (2021) https://doi.org/10.1116/6.0001032

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Microelectronic and Nanoelectronic Devices

Ultraviolet light stimulated water desorption effect on emission performance of gated field emitter array

Ranajoy Bhattacharya; Nedeljko Karaulac; Girish Rughoobur; Winston Chern; Akintunade Ibitayo Akinwande; Jim Browning

J. Vac. Sci. Technol. B 39, 033201 (2021) https://doi.org/10.1116/6.0001036

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Fast SARS-CoV-2 virus detection using disposable cartridge strips and a semiconductor-based biosensor platform

Minghan Xian; Hao Luo; Xinyi Xia; Chaker Fares; Patrick H. Carey, IV; Chan-Wen Chiu; Fan Ren; Siang-Sin Shan; Yu-Te Liao; Shu-Min Hsu; Josephine F. Esquivel-Upshaw; Chin-Wei Chang; Jenshan Lin; Steven C. Ghivizzani; Stephen J. Pearton

J. Vac. Sci. Technol. B 39, 033202 (2021) https://doi.org/10.1116/6.0001060

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Vacuum Measurement and Technology

Influence of primary electron incident angle and electron bombardment on the secondary electron yield of laser-treated copper

Yigang Wang; Wenli Zhang; Sihui Wang; Wei Wei; Jianwei Fang; Bangle Zhu; Yong Wang

J. Vac. Sci. Technol. B 39, 034201 (2021) https://doi.org/10.1116/6.0000952

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Systematic study of the outgassing behavior of different ceramic materials

Katharina Battes; Christian Day; Volker Hauer

J. Vac. Sci. Technol. B 39, 034202 (2021) https://doi.org/10.1116/6.0000954

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Submit your article

Sign up for alerts

RSS

Current Issue RSS Feed

Open Issues RSS Feed

Most Read
Most Cited

Future of plasma etching for microelectronics: Challenges and opportunities

Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.

Vertical silicon nanowedge formation by repetitive dry and wet anisotropic etching combined with 3D self-aligned sidewall nanopatterning

Yasser Pordeli, Céline Steenge, et al.

Heating of

C s_{2} Te

photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown

Ryo Shinohara, Soumendu Bagchi, et al.

Letters

Electronic structure and field emission characteristics of a new kind of BeO nanotubes: A first-principles study

Improvement of silicon microdisk resonators with movable waveguides by hydrogen annealing treatment

ARTICLES

Electronic and Optoelectronic Materials, Devices and Processing

Cr and CrO_x etching using SF₆ and O₂ plasma

Behavior of photoexcited electrons in hole-transport material-free perovskite solar cells

Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors

Fully vertical gallium nitride trench MOSFETs fabricated with metal-free gate first process

Effects of thickness on the wettability and electrical properties of Sn thin films

Lithography

Nanometer-scale capillary-driven flow and molecular weight govern polymer nanostructure deposition from a heated tip

Estimation of critical dimension and line edge roughness using a neural network

Suppression of resist pattern collapse by crosslinker in ultraviolet nanoimprinting involving sequential infiltration synthesis with trimethylaluminum

Nanoscale Science and Technology

Determining the field enhancement factors of various field electron emitters with high numerical accuracy

Organotrialkoxysilane-mediated synthesis of Ni–Pd nanocatalysts at lower concentrations of noble metal: Catalysts for faster hydrogen evolution kinetics

MEMS and NEMS

Thin films residual stress profile evaluation using test microstructures: Illustrated on an example of AlN film

Microelectronic and Nanoelectronic Devices

Ultraviolet light stimulated water desorption effect on emission performance of gated field emitter array

Fast SARS-CoV-2 virus detection using disposable cartridge strips and a semiconductor-based biosensor platform

Vacuum Measurement and Technology

Influence of primary electron incident angle and electron bombardment on the secondary electron yield of laser-treated copper

Systematic study of the outgassing behavior of different ceramic materials

Submit your article

Sign up for alerts

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Issues

Cover Image

Letters

ARTICLES

Electronic and Optoelectronic Materials, Devices and Processing

Lithography

Nanoscale Science and Technology

MEMS and NEMS

Microelectronic and Nanoelectronic Devices

Vacuum Measurement and Technology

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only