Skip Nav Destination
Direct imprinting of TiO2 patterns on highly curved substrates
Comparative study on the molecular beam epitaxial growth and characterization of AlGaN nanowire structures on AlN buffer layer and on Si
3D-electrode integrated microsieve structure as a rapid and cost-effective single neuron detector
Chip layout impact on stress-induced mobility degradation studied with indentation
Investigations of internal stresses in high-voltage devices with deep trenches
Issues
Letters
Mechanically reliable hybrid organosilicate glasses for advanced interconnects
In Special Collection:
Reliability and Stress-related Phenomena in Nano and Microelectronics
J. Vac. Sci. Technol. B 38, 060601 (2020)
https://doi.org/10.1116/6.0000517
Selective lateral photoelectrochemical wet etching of InGaN nanorods
J. Vac. Sci. Technol. B 38, 060602 (2020)
https://doi.org/10.1116/6.0000527
Review Articles
Atomic force microscopy for nanoscale mechanical property characterization
J. Vac. Sci. Technol. B 38, 060801 (2020)
https://doi.org/10.1116/6.0000544
ARTICLES
Electronic and Optoelectronic Materials, Devices and Processing
Preparation of clean MgO surface by oxygen plasma: Comparison with standard substrate cleaning procedures
J. Vac. Sci. Technol. B 38, 062201 (2020)
https://doi.org/10.1116/6.0000371
Fabrication of free-standing silicon carbide on silicon microstructures via massive silicon sublimation
In Special Collection:
Reliability and Stress-related Phenomena in Nano and Microelectronics
J. Vac. Sci. Technol. B 38, 062202 (2020)
https://doi.org/10.1116/6.0000490
Investigation of the electrical behavior of AlGaN/GaN high electron mobility transistors grown with underlying GaN:Mg layer
J. Vac. Sci. Technol. B 38, 062204 (2020)
https://doi.org/10.1116/6.0000255
Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures
J. Vac. Sci. Technol. B 38, 062206 (2020)
https://doi.org/10.1116/6.0000287
Postdeposition annealing effect on the reliability of atomic-layer-deposited Al2O3 films on GaN
In Special Collection:
Reliability and Stress-related Phenomena in Nano and Microelectronics
J. Vac. Sci. Technol. B 38, 062207 (2020)
https://doi.org/10.1116/6.0000531
Effect of oxygen vacancy gradient on ion-irradiated Ca-doped YMnO3 thin films
Kunalsinh N. Rathod; Keval Gadani; Davit Dhruv; Vipul G. Shrimali; Sapana Solanki; Ashvini D. Joshi; Jitendra P. Singh; Keun H. Chae; Kandasami Asokan; Piyush S. Solanki; Nikesh A. Shah
J. Vac. Sci. Technol. B 38, 062208 (2020)
https://doi.org/10.1116/6.0000507
Design of a remote plasma-enhanced chemical vapor deposition system for growth of tin containing group-IV alloys
J. Vac. Sci. Technol. B 38, 062209 (2020)
https://doi.org/10.1116/6.0000406
Superhydrophobic SnO2 nanowire/graphene heterostructure-based ultraviolet detectors
J. Vac. Sci. Technol. B 38, 062210 (2020)
https://doi.org/10.1116/6.0000565
Energy Conversion and Storage Devices
Electrospun Mn2O3 web electrodes: Influence of fabrication parameters on electrochemical performance
In Special Collection:
Electron, Ion, and Photon Beam Technology and Nanofabrication, EIPBN 2020
J. Vac. Sci. Technol. B 38, 062401 (2020)
https://doi.org/10.1116/6.0000553
Lithography
Effectiveness of multipass and multirow writing methods for massively parallel e-beam systems
In Special Collection:
Electron, Ion, and Photon Beam Technology and Nanofabrication, EIPBN 2020
J. Vac. Sci. Technol. B 38, 062601 (2020)
https://doi.org/10.1116/6.0000547
Cryogenic cleaning of tin-drop contamination on surfaces relevant for extreme ultraviolet light collection
J. Vac. Sci. Technol. B 38, 062602 (2020)
https://doi.org/10.1116/6.0000501
Shape and dose control for proximity effect correction on massively parallel electron-beam systems
In Special Collection:
Electron, Ion, and Photon Beam Technology and Nanofabrication, EIPBN 2020
J. Vac. Sci. Technol. B 38, 062603 (2020)
https://doi.org/10.1116/6.0000556
Direct imprinting of TiO2 patterns on highly curved substrates
J. Vac. Sci. Technol. B 38, 062604 (2020)
https://doi.org/10.1116/6.0000554
Nanometer Science and Technology
Bias-voltage-dependent measurement of apparent barrier height on low-work-function thin film
In Special Collection:
Electron, Ion, and Photon Beam Technology and Nanofabrication, EIPBN 2020
J. Vac. Sci. Technol. B 38, 062801 (2020)
https://doi.org/10.1116/6.0000436
Effects of cavity shapes and rounded corners of mold on polymer filling process in nanoimprint lithography
In Special Collection:
Reliability and Stress-related Phenomena in Nano and Microelectronics
J. Vac. Sci. Technol. B 38, 062802 (2020)
https://doi.org/10.1116/6.0000498
Comparative study on the molecular beam epitaxial growth and characterization of AlGaN nanowire structures on AlN buffer layer and on Si
J. Vac. Sci. Technol. B 38, 062804 (2020)
https://doi.org/10.1116/6.0000646
Electrical characteristics, stability, electromigration, Joule heating, and reliability aspect of focused ion beam fabricated gold and copper nanobar interconnects on SiO2 and glass substrates
In Special Collection:
Reliability and Stress-related Phenomena in Nano and Microelectronics
J. Vac. Sci. Technol. B 38, 062805 (2020)
https://doi.org/10.1116/6.0000514
Investigation of the current level instability of the multitip field emitters with computerized field emission projector
J. Vac. Sci. Technol. B 38, 062806 (2020)
https://doi.org/10.1116/6.0000622
Anomalous enhancement of focused ion beam etching by single raster propagating toward ion beam at glancing incidence
In Special Collection:
Electron, Ion, and Photon Beam Technology and Nanofabrication, EIPBN 2020
J. Vac. Sci. Technol. B 38, 062807 (2020)
https://doi.org/10.1116/6.0000555
MEMS and NEMS
Parylene micropillars coated with thermally grown SiO2
In Special Collection:
Electron, Ion, and Photon Beam Technology and Nanofabrication, EIPBN 2020
J. Vac. Sci. Technol. B 38, 063001 (2020)
https://doi.org/10.1116/6.0000558
nanolithography toolbox—Simplifying the design complexity of microfluidic chips
Haoqing Zhang; Jan Pekárek; Jianguo Feng; Xiaocheng Liu; Huanan Li; Hanliang Zhu; Vojtěch Svatoš; Imrich Gablech; Pavel Podešva; Sheng Ni; Levent Yobas; Pavel Neužil
J. Vac. Sci. Technol. B 38, 063002 (2020)
https://doi.org/10.1116/6.0000562
Microelectronic and Nanoelectronic Devices
3D-electrode integrated microsieve structure as a rapid and cost-effective single neuron detector
In Special Collection:
Electron, Ion, and Photon Beam Technology and Nanofabrication, EIPBN 2020
J. Vac. Sci. Technol. B 38, 063202 (2020)
https://doi.org/10.1116/6.0000518
Electromigration simulation and design considerations for integrated circuit power grids
In Special Collection:
Reliability and Stress-related Phenomena in Nano and Microelectronics
J. Vac. Sci. Technol. B 38, 063204 (2020)
https://doi.org/10.1116/6.0000476
Advanced methodology for assessing chip package interaction effects on chip performance and reliability after chip assembly and during chip operation
In Special Collection:
Reliability and Stress-related Phenomena in Nano and Microelectronics
J. Vac. Sci. Technol. B 38, 063205 (2020)
https://doi.org/10.1116/6.0000506
Chip layout impact on stress-induced mobility degradation studied with indentation
In Special Collection:
Reliability and Stress-related Phenomena in Nano and Microelectronics
Simon Schlipf; André Clausner; Jens Paul; Simone Capecchi; Laura Wambera; Karsten Meier; Ehrenfried Zschech
J. Vac. Sci. Technol. B 38, 063206 (2020)
https://doi.org/10.1116/6.0000581
Mechanical analysis of a flexible microelectronic system under twisting stress
In Special Collection:
Reliability and Stress-related Phenomena in Nano and Microelectronics
J. Vac. Sci. Technol. B 38, 063207 (2020)
https://doi.org/10.1116/6.0000665
Measurement and Characterization
Experimental reliability study of cumulative damage models on state-of-the-art semiconductor technologies for step-stress tests and mission profile stresses
In Special Collection:
Reliability and Stress-related Phenomena in Nano and Microelectronics
J. Vac. Sci. Technol. B 38, 064001 (2020)
https://doi.org/10.1116/6.0000504
Energy distributions of secondary ions for the Ar ion beam sputtering of indium tin oxide
J. Vac. Sci. Technol. B 38, 064002 (2020)
https://doi.org/10.1116/6.0000516
Phase errors reduction in multi-angle illumination digital holographic microscopy
J. Vac. Sci. Technol. B 38, 064003 (2020)
https://doi.org/10.1116/6.0000478
Investigations of internal stresses in high-voltage devices with deep trenches
In Special Collection:
Reliability and Stress-related Phenomena in Nano and Microelectronics
J. Vac. Sci. Technol. B 38, 064004 (2020)
https://doi.org/10.1116/6.0000515
Vacuum Measurement and Technology
Deterministic and stochastic modeling of rarefied gas flows in fusion particle exhaust systems
J. Vac. Sci. Technol. B 38, 064201 (2020)
https://doi.org/10.1116/6.0000491
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry
Shiva Mudide, Nick Keller, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.