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Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides
Extending the metal-induced gap state model of Schottky barriers
Adsorption behavior of cobalt phthalocyanine submonolayer coverages on B-Si(111)-
Mechanism of premature etch stop in high-density magnetic-tunnel-junction patterning using CO/NH3 plasma with Ta mask
Comparison of macroscopic and microscopic emission characteristics of large area field emitters based on carbon nanotubes and graphene
Ionization probability of sputtered indium atoms under impact of slow highly charged ions
Dielectric breakdown in epitaxial BaTiO3 thin films
Issues
Letters
Controlled removal of hydrogen atoms from H-terminated silicon surfaces
J. Vac. Sci. Technol. B 38, 040601 (2020)
https://doi.org/10.1116/6.0000241
Engineering anisotropic magnetoresistance of Hall bars with interfacial organic layers
Jun Hong Park; Mario Ribeiro; Thi Kim Hang Pham; Nyun Jong Lee; Tai-woon Eom; Junhyeon Jo; Seung-Young Park; Sonny H. Rhim; Kohji Nakamura; Jung-Woo Yoo; Tae Hee Kim
J. Vac. Sci. Technol. B 38, 040602 (2020)
https://doi.org/10.1116/6.0000222
ARTICLES
Electronic and Optoelectronic Materials, Devices and Processing
Thickness dependence of infrared lattice absorption and excitonic absorption in ZnO layers on Si and SiO2 grown by atomic layer deposition
In Special Collection:
Conference Collection: 8th International Conference on Spectroscopic Ellipsometry 2019, ICSE
J. Vac. Sci. Technol. B 38, 042201 (2020)
https://doi.org/10.1116/6.0000184
Photoluminescence properties of epitaxial asymmetric triple CdSe quantum wells
In Special Collection:
Conference Collection: 35th North American Molecular Beam Epitaxy Conference 2019
J. Vac. Sci. Technol. B 38, 042202 (2020)
https://doi.org/10.1116/6.0000091
Quantum and transport lifetimes in optically induced GaN/AlGaN 2DEGs grown on bulk GaN
In Special Collection:
Conference Collection: 35th North American Molecular Beam Epitaxy Conference 2019
Luisa Krückeberg; Steffen Wirth; Victor V. Solovyev; Andreas Großer; Igor V. Kukushkin; Thomas Mikolajick; Stefan Schmult
J. Vac. Sci. Technol. B 38, 042203 (2020)
https://doi.org/10.1116/1.5145198
In situ grown single crystal aluminum as a nonalloyed ohmic contact to n-ZnSe by molecular beam epitaxy
J. Vac. Sci. Technol. B 38, 042204 (2020)
https://doi.org/10.1116/6.0000245
Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides
J. Vac. Sci. Technol. B 38, 042205 (2020)
https://doi.org/10.1116/6.0000251
Inkjet-printed MoS2-based field-effect transistors with graphene and hexagonal boron nitride inks
J. Vac. Sci. Technol. B 38, 042206 (2020)
https://doi.org/10.1116/6.0000082
Photoassisted chemical smoothing of AlGaN surface after laser lift-off
Zhongming Zheng; Hao Long; Samuel Matta; Mathieu Leroux; Julien Brault; Leiying Ying; Zhiwei Zheng; Baoping Zhang
J. Vac. Sci. Technol. B 38, 042207 (2020)
https://doi.org/10.1116/6.0000192
Extending the metal-induced gap state model of Schottky barriers
J. Vac. Sci. Technol. B 38, 042208 (2020)
https://doi.org/10.1116/6.0000164
Lithography
Self-detached membranes with well-defined pore size, shape and distribution fabricated by underexposure photolithography
J. Vac. Sci. Technol. B 38, 042601 (2020)
https://doi.org/10.1116/6.0000203
Nanometer Science and Technology
Boron liquid metal alloy ion sources for special focused ion beam applications
J. Vac. Sci. Technol. B 38, 042801 (2020)
https://doi.org/10.1116/6.0000073
Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology
Marek Ekielski; Marek Wzorek; Krystyna Gołaszewska; Alina Domanowska; Andrzej Taube; Mariusz Sochacki
J. Vac. Sci. Technol. B 38, 042802 (2020)
https://doi.org/10.1116/6.0000133
Adsorption behavior of cobalt phthalocyanine submonolayer coverages on B-Si(111)-
J. Vac. Sci. Technol. B 38, 042803 (2020)
https://doi.org/10.1116/6.0000242
Mechanism of premature etch stop in high-density magnetic-tunnel-junction patterning using CO/NH3 plasma with Ta mask
J. Vac. Sci. Technol. B 38, 042805 (2020)
https://doi.org/10.1116/6.0000305
Microelectronic and Nanoelectronic Devices
Advanced modeling of field enhanced thermionic emission
In Special Collection:
Conference Collection: 32nd IVNC and 12th IVESC (2019 Joint Meeting)
J. Vac. Sci. Technol. B 38, 043201 (2020)
https://doi.org/10.1116/1.5140753
Monolithically fabricated sample for the calibration of the tip-sample thermal conductance in scanning thermal microscopy
J. Vac. Sci. Technol. B 38, 043202 (2020)
https://doi.org/10.1116/6.0000034
Comparison of macroscopic and microscopic emission characteristics of large area field emitters based on carbon nanotubes and graphene
In Special Collection:
Conference Collection: 32nd IVNC and 12th IVESC (2019 Joint Meeting)
Eugeni O. Popov; Anatoly G. Kolosko; Sergey V. Filippov; Evgeny I. Terukov; Roman M. Ryazanov; Evgeny P. Kitsyuk
J. Vac. Sci. Technol. B 38, 043203 (2020)
https://doi.org/10.1116/6.0000072
High current density electron emission from an electrodeposited metal nanowire array
Tanouir Aloui; Matthew P. Kirley; Erik Vick; Allan Hilton; Pedro Colon; William Kim; Charles B. Parker; Jason J. Amsden; Jeffrey T. Glass; Kristin H. Gilchrist
J. Vac. Sci. Technol. B 38, 043204 (2020)
https://doi.org/10.1116/6.0000135
Measurement and Characterization
Development of two-color resonant ionization sputtered neutral mass spectrometry and microarea imaging for Sr
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
Yue Zhao; Takeru Yoshida; Yuzuka Ohmori; Yuta Miyashita; Masato Morita; Tetsuo Sakamoto; Kotaro Kato; Ryohei Terabayashi; Volker Sonnenschein; Hideki Tomita; Toshihide Kawai; Takeo Okumura; Yukihiko Satou; Masabumi Miyabe; Ikuo Wakaida
J. Vac. Sci. Technol. B 38, 044001 (2020)
https://doi.org/10.1116/6.0000006
Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
M. K. Indika Senevirathna; Mark Vernon; Graham A. Cooke; Garnett B. Cross; Alexander Kozhanov; Michael D. Williams
J. Vac. Sci. Technol. B 38, 044002 (2020)
https://doi.org/10.1116/6.0000138
Ionization probability of sputtered indium atoms under impact of slow highly charged ions
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
Matthias Herder; Philipp Ernst; Lucia Skopinski; Boris Weidtmann; Marika Schleberger; Andreas Wucher
J. Vac. Sci. Technol. B 38, 044003 (2020)
https://doi.org/10.1116/6.0000171
Correlation between electromigration-related void volumes and time-to-failure, the high-resolution x-ray tomography’s vital support
In Special Collection:
Reliability and Stress-related Phenomena in Nano and Microelectronics
J. Vac. Sci. Technol. B 38, 044004 (2020)
https://doi.org/10.1116/6.0000252
Calibration of matrix-dependent biases in isotope and trace element analyses of carbonate minerals
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 044005 (2020)
https://doi.org/10.1116/6.0000111
Observation of light and secondary ion emissions from surfaces irradiated with highly charged ions
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 044006 (2020)
https://doi.org/10.1116/6.0000042
Dielectric breakdown in epitaxial BaTiO3 thin films
HsinWei Wu; Patrick Ponath; Edward L. Lin; Robert M. Wallace; Chadwin Young; John G. Ekerdt; Alexander A. Demkov; Martha R. McCartney; David J. Smith
J. Vac. Sci. Technol. B 38, 044007 (2020)
https://doi.org/10.1116/6.0000237
Enhanced sputter and secondary ion yields using MeV gold nanoparticle beams delivered by the Andromede facility
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
Thanh Loan Lai; Dominique Jacquet; Isabelle Ribaud; Michael John Eller; Dmitriy Verkhoturov; Emile Albert Schweikert; Luiz Henrique Galvão Tizei; Fuhui Shao; Suheyla Bilgen; Bruno Mercier; Gael Sattonnay; Serge Della Negra
J. Vac. Sci. Technol. B 38, 044008 (2020)
https://doi.org/10.1116/6.0000173
Study of the phase nature of boron- and nitrogen-containing films by optical and photoelectron spectroscopy
Arnoud J. Onnink; Ramazan O. Apaydin; Antonius A. I. Aarnink; Michel P. de Jong; Dirk J. Gravesteijn; Alexey Y. Kovalgin
J. Vac. Sci. Technol. B 38, 044009 (2020)
https://doi.org/10.1116/6.0000193
Vacuum Measurement and Technology
One-dimensional simulation of Couette–Poiseuille flow with variable cross section for the full range of gas rarefaction
J. Vac. Sci. Technol. B 38, 044201 (2020)
https://doi.org/10.1116/6.0000207
Notes
Simple O-ring sealed Brewster-angle window for ultrahigh vacuum applications
J. Vac. Sci. Technol. B 38, 045001 (2020)
https://doi.org/10.1116/6.0000221
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.