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Letters
Review Articles
Polyphosphazene polymers: The next generation of biomaterials for regenerative engineering and therapeutic drug delivery
In Special Collection:
Papers from the 10th International Symposium on Clusters and Nanomaterials (ISCAN - 2019)
J. Vac. Sci. Technol. B 38, 030801 (2020)
https://doi.org/10.1116/6.0000055
Colloidal synthesis, physical properties, and applications of zero- and one-dimensional GeSn nanostructures
In Special Collection:
Papers from the 10th International Symposium on Clusters and Nanomaterials (ISCAN - 2019)
J. Vac. Sci. Technol. B 38, 030802 (2020)
https://doi.org/10.1116/6.0000040
ARTICLES
Electronic and Optoelectronic Materials, Devices and Processing
Study of pit formation in MBE grown GaP on misoriented Si
In Special Collection:
Conference Collection: 35th North American Molecular Beam Epitaxy Conference 2019
J. Vac. Sci. Technol. B 38, 032201 (2020)
https://doi.org/10.1116/6.0000064
Low-temperature chemical vapor deposition growth of graphene films enabled by ultrathin alloy catalysts
J. Vac. Sci. Technol. B 38, 032202 (2020)
https://doi.org/10.1116/1.5144692
Insulating regions in a TiO2 thin film defined by laser irradiation
J. Vac. Sci. Technol. B 38, 032203 (2020)
https://doi.org/10.1116/1.5142402
Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates
In Special Collection:
Conference Collection: 35th North American Molecular Beam Epitaxy Conference 2019
J. Vac. Sci. Technol. B 38, 032204 (2020)
https://doi.org/10.1116/6.0000063
Low-temperature AlN film deposition using magnetic mirror-type magnetron cathode for low gas pressure operation
J. Vac. Sci. Technol. B 38, 032205 (2020)
https://doi.org/10.1116/1.5129720
Influence of strain on the InAs1 – xSbx composition
In Special Collection:
Conference Collection: 35th North American Molecular Beam Epitaxy Conference 2019
J. Vac. Sci. Technol. B 38, 032206 (2020)
https://doi.org/10.1116/1.5145066
Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme
J. Vac. Sci. Technol. B 38, 032207 (2020)
https://doi.org/10.1116/1.5144509
Etching of Si3N4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment
J. Vac. Sci. Technol. B 38, 032208 (2020)
https://doi.org/10.1116/1.5143538
Submonolayer epitaxy growth of fractional monolayer CdSe/ZnSe quantum dots
In Special Collection:
Conference Collection: 35th North American Molecular Beam Epitaxy Conference 2019
J. Vac. Sci. Technol. B 38, 032209 (2020)
https://doi.org/10.1116/6.0000085
Role of substrate temperature and tellurium flux on the electrical and optical properties of MBE grown GeTe and Sb2Te3 thin films on GaAs (100)
In Special Collection:
Conference Collection: 35th North American Molecular Beam Epitaxy Conference 2019
J. Vac. Sci. Technol. B 38, 032210 (2020)
https://doi.org/10.1116/6.0000062
Structural and electrical properties of Pd/p-GaN contacts for GaN-based laser diodes
J. Vac. Sci. Technol. B 38, 032211 (2020)
https://doi.org/10.1116/1.5143139
Aluminum metallization of III–V semiconductors for the study of proximity superconductivity
In Special Collection:
Conference Collection: 35th North American Molecular Beam Epitaxy Conference 2019
J. Vac. Sci. Technol. B 38, 032212 (2020)
https://doi.org/10.1116/1.5145073
Firing voltage reduction in thermally annealed Ge–As–Te thin film with ovonic threshold switching
J. Vac. Sci. Technol. B 38, 032213 (2020)
https://doi.org/10.1116/1.5144736
Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire
In Special Collection:
Conference Collection: 35th North American Molecular Beam Epitaxy Conference 2019
J. Vac. Sci. Technol. B 38, 032214 (2020)
https://doi.org/10.1116/6.0000052
Lithography
Integrated in situ self-aligned double patterning process with fluorocarbon as spacer layer
J. Vac. Sci. Technol. B 38, 032601 (2020)
https://doi.org/10.1116/6.0000089
Thermal degradation behavior of self-assembled monolayer surfactant on silicon substrate
J. Vac. Sci. Technol. B 38, 032602 (2020)
https://doi.org/10.1116/1.5143307
Demolding improvement for multidirectional nanostructures by nanoimprint lithography
J. Vac. Sci. Technol. B 38, 032603 (2020)
https://doi.org/10.1116/1.5144504
Nanometer Science and Technology
Field emission from nanotubes and flakes of transition metal dichalcogenides
In Special Collection:
Conference Collection: 32nd IVNC and 12th IVESC (2019 Joint Meeting)
J. Vac. Sci. Technol. B 38, 032801 (2020)
https://doi.org/10.1116/1.5140474
ToF-SIMS study of selective anchoring of Ru(tpy)2 complexes on zirconium-phosphate functionalized oxide surfaces
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 032802 (2020)
https://doi.org/10.1116/6.0000045
Material properties compliance with cryogenic vacuum for particle accelerators
In Special Collection:
Conference Collection: XXIV AIV 2019 Conference of the Association of Science and Technology
J. Vac. Sci. Technol. B 38, 032803 (2020)
https://doi.org/10.1116/1.5144664
Bismuth adducted intact molecular ions [M + Bi]+ under low-energy bismuth cluster ion beams
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 032804 (2020)
https://doi.org/10.1116/6.0000096
Plasma-induced reaction at plasma-liquid and plasma-polymeric film interface by AC-driven atmospheric pressure plasma
J. Vac. Sci. Technol. B 38, 032805 (2020)
https://doi.org/10.1116/1.5129570
Field emission scanning probe lithography with GaN nanowires on active cantilevers
J. Vac. Sci. Technol. B 38, 032806 (2020)
https://doi.org/10.1116/1.5137901
Microelectronic and Nanoelectronic Devices
AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology
J. Vac. Sci. Technol. B 38, 033201 (2020)
https://doi.org/10.1116/1.5143418
High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors
J. Vac. Sci. Technol. B 38, 033202 (2020)
https://doi.org/10.1116/1.5135590
Magnetic Devices and Spintronics
Measurement and Characterization
Resonant sputtered neutral mass spectrometry using multiple reflections of laser to counterbalance Doppler broadening
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 034001 (2020)
https://doi.org/10.1116/6.0000012
Ionic migrations during poling process in lanthanum aluminate investigated by time of flight-secondary ions mass spectrometry and piezoresponse force microscopy combined methodology
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 034002 (2020)
https://doi.org/10.1116/6.0000114
Structural analysis of organic ultrathin-layer by using Ar-gas-cluster ion beam sputter collecting method
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 034003 (2020)
https://doi.org/10.1116/6.0000102
Effects of polymer crystallization on the molecular sensitivity in TOF-SIMS measurements using Bi1+ and Bi32+ ions
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 034004 (2020)
https://doi.org/10.1116/6.0000015
Electron dynamics during the reignition of pulsed capacitively-coupled radio-frequency discharges
J. Vac. Sci. Technol. B 38, 034005 (2020)
https://doi.org/10.1116/1.5133790
Analysis of permethrin treated fabric using ToF-SIMS
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 034006 (2020)
https://doi.org/10.1116/1.5141467
Fusion data analysis of imaging data of hydrogen-permeated steel obtained by complementary methods
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 034007 (2020)
https://doi.org/10.1116/6.0000009
Absorption, discharge, and internal partitioning behavior of hydrogen in the tantalum and tantalum oxide system investigated by in situ oxidation SIMS and ab initio calculations
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 034008 (2020)
https://doi.org/10.1116/6.0000100
Comparison of quantitative analyses using SIMS, atom probe tomography, and femtosecond laser ablation inductively coupled plasma mass spectrometry with Si1−XGeX and Fe1−X NiX binary alloys
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 034009 (2020)
https://doi.org/10.1116/6.0000101
Explanation of the apparent depth resolution improvement by SIMS using cluster ion detection
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 034010 (2020)
https://doi.org/10.1116/6.0000108
Improvement of ionization yield in sputtered neutral mass spectrometry using pulsed infrared and ultraviolet lasers
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 034011 (2020)
https://doi.org/10.1116/6.0000088
Analytic solutions for calculating the surface inclination of isotropic media and bare substrates by using reflection-based generalized ellipsometry
In Special Collection:
Conference Collection: 8th International Conference on Spectroscopic Ellipsometry 2019, ICSE
J. Vac. Sci. Technol. B 38, 034012 (2020)
https://doi.org/10.1116/1.5144506
Wider vision capability provided by a curved surface sample holder for TOF-SIMS imaging
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 034013 (2020)
https://doi.org/10.1116/6.0000039
Secondary ion mass spectrometry measurements under ambient and humid conditions using MeV ions
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 034014 (2020)
https://doi.org/10.1116/1.5145014
Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS
In Special Collection:
Special Topic Collection on Secondary Ion Mass Spectrometry (SIMS)
J. Vac. Sci. Technol. B 38, 034015 (2020)
https://doi.org/10.1116/1.5144500
