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Volume 37, Issue 4

July 2019

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ISSN 2166-2746

EISSN 2166-2754

In this Issue

Letters
Articles

Letters

Maskless random antireflective nanotexturing of single crystal SiC

Lars F. Voss; Clint D. Frye; Mihail Bora; David L. Hall; Paulius V. Grivickas; Adam M. Conway

J. Vac. Sci. Technol. B 37, 040601 (2019) https://doi.org/10.1116/1.5108513

Abstract

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One-step transfer printing of patterned nanogap electrodes

Kai B. Saller; Hubert Riedl; Paolo Lugli; Gregor Koblmüller; Marc Tornow

J. Vac. Sci. Technol. B 37, 040602 (2019) https://doi.org/10.1116/1.5100560

Abstract

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Validation of current formula for a metallic nanotipped field emitter

Debabrata Biswas; Raghwendra Kumar

J. Vac. Sci. Technol. B 37, 040603 (2019) https://doi.org/10.1116/1.5110207

Abstract

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Articles

Electronic & Optoelectronic Materials, Devices & Processing

Remote plasma-assisted low-temperature large-area graphene synthesis

Jian Yi Pae; Rohit Medwal; Joseph Vimal Vas; Murukeshan Vadakke Matham; Rajdeep Singh Rawat

J. Vac. Sci. Technol. B 37, 041201 (2019) https://doi.org/10.1116/1.5093241

Abstract

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Comparative study of electron field emission from randomly-oriented and vertically-aligned carbon nanotubes synthesized on stainless steel substrates

Matthew R. Kurilich; Arun Thapa; Aric Moilanen; Joyce L. Miller; Wenzhi Li; Suman Neupane

J. Vac. Sci. Technol. B 37, 041202 (2019) https://doi.org/10.1116/1.5098782

Abstract

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Interface trap characterization of AlN/GaN heterostructure with Al₂O₃, HfO₂, and HfO₂/Al₂O₃ dielectrics

Hogyoung Kim; Hee Ju Yun; Seok Choi; Byung Joon Choi

J. Vac. Sci. Technol. B 37, 041203 (2019) https://doi.org/10.1116/1.5094174

Abstract

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Study of defects in β-Ga₂O₃ by isothermal capacitance transient spectroscopy

Yu-Yao Lin; Adam T. Neal; Shin Mou; Jian V. Li

J. Vac. Sci. Technol. B 37, 041204 (2019) https://doi.org/10.1116/1.5109088

Abstract

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High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al₂O₃ gate insulator

Daiki Hosomi; Keita Furuoka; Heng Chen; Saki Saito; Toshiharu Kubo; Takashi Egawa; Makoto Miyoshi

J. Vac. Sci. Technol. B 37, 041205 (2019) https://doi.org/10.1116/1.5097338

Abstract

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Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides

Donghyi Koh; Sanjay K. Banerjee; Chris Locke; Stephen E. Saddow; Justin Brockman; Markus Kuhn; Sean W. King

J. Vac. Sci. Technol. B 37, 041206 (2019) https://doi.org/10.1116/1.5111049

Abstract

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CHORUS

Selective growth of uniform single-layer graphene on Cu foil and fabrication of damage-free field effect transistor combining with direct transfer

Seulgi Park; Hyunjin Park; YoungMoon Choi; Ohyun Kim

J. Vac. Sci. Technol. B 37, 041207 (2019) https://doi.org/10.1116/1.5109737

Abstract

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Lithography

Chemical reaction and diffusion kinetics during laser-induced submillisecond heating for lithographic applications

Jing Jiang; Byungki Jung; Michael O. Thompson; Christopher K. Ober

J. Vac. Sci. Technol. B 37, 041601 (2019) https://doi.org/10.1116/1.5086871

Abstract

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Nanometer Science & Technology

High-yield fabrication method for high-frequency graphene devices using titanium sacrificial layers

Panagiotis C. Theofanopoulos; Scott Ageno; Yuqi Guo; Suneet Kale; Qing Hua Wang; Georgios C. Trichopoulos

J. Vac. Sci. Technol. B 37, 041801 (2019) https://doi.org/10.1116/1.5098324

Abstract

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Dual ion beam grown silicon carbide thin films: Variation of refractive index and bandgap with film thickness

In Special Collection: Conference Collection: 8th International Conference on Spectroscopic Ellipsometry 2019, ICSE

Aakash Mathur; Dipayan Pal; Ajaib Singh; Rinki Singh; Stefan Zollner; Sudeshna Chattopadhyay

J. Vac. Sci. Technol. B 37, 041802 (2019) https://doi.org/10.1116/1.5097628

Abstract

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CHORUS

Oxygen reduction reaction mechanism of N-doped graphene nanoribbons

In Special Collection: Conference Collection: PACSURF 2018

Haruyuki Matsuyama; Shun-ichi Gomi; Jun Nakamura

J. Vac. Sci. Technol. B 37, 041803 (2019) https://doi.org/10.1116/1.5100535

Abstract

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Atomic deuteration of epitaxial many-layer graphene on $4 H - S i C (000 \bar{1})$

In Special Collection: Conference Collection: 46th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-46) 2019

Alessandro R. Mazza; Anna Miettinen; Matt Conrad; Timothy R. Charlton; Xiaoqing He; Suchi Guha; Guang Bian; Jian Lin; Edward H. Conrad; Paul F. Miceli

J. Vac. Sci. Technol. B 37, 041804 (2019) https://doi.org/10.1116/1.5095961

Abstract

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CHORUS

Measurement and Characterization

Gas equilibration gas modulation refractometry for assessment of pressure with sub-ppm precision

Isak Silander; Thomas Hausmaninger; Clayton Forssén; Martin Zelan; Ove Axner

J. Vac. Sci. Technol. B 37, 042901 (2019) https://doi.org/10.1116/1.5090860

Abstract

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High temperature plasma immersion ion implantation using hollow cathode discharges in small diameter metal tubes

Mario Ueda; Carla Silva; Gelson B. de Souza; Luc Pichon; Helfried Reuther

J. Vac. Sci. Technol. B 37, 042902 (2019) https://doi.org/10.1116/1.5092435

Abstract

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Nanostructures of type-II topological Dirac semimetal NiTe₂

Rajendra P. Dulal; Bishnu R. Dahal; Andrew Forbes; Niraj Bhattarai; Ian L. Pegg; John Philip

J. Vac. Sci. Technol. B 37, 042903 (2019) https://doi.org/10.1116/1.5111331

Abstract

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Letters

Maskless random antireflective nanotexturing of single crystal SiC

One-step transfer printing of patterned nanogap electrodes

Validation of current formula for a metallic nanotipped field emitter

Articles

Electronic & Optoelectronic Materials, Devices & Processing

Remote plasma-assisted low-temperature large-area graphene synthesis

Comparative study of electron field emission from randomly-oriented and vertically-aligned carbon nanotubes synthesized on stainless steel substrates

Interface trap characterization of AlN/GaN heterostructure with Al₂O₃, HfO₂, and HfO₂/Al₂O₃ dielectrics

Study of defects in β-Ga₂O₃ by isothermal capacitance transient spectroscopy

High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al₂O₃ gate insulator

Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides

Selective growth of uniform single-layer graphene on Cu foil and fabrication of damage-free field effect transistor combining with direct transfer

Lithography

Chemical reaction and diffusion kinetics during laser-induced submillisecond heating for lithographic applications

Nanometer Science & Technology

High-yield fabrication method for high-frequency graphene devices using titanium sacrificial layers

Dual ion beam grown silicon carbide thin films: Variation of refractive index and bandgap with film thickness

Oxygen reduction reaction mechanism of N-doped graphene nanoribbons

Atomic deuteration of epitaxial many-layer graphene on $4 H - S i C (000 \bar{1})$

Measurement and Characterization

Gas equilibration gas modulation refractometry for assessment of pressure with sub-ppm precision

High temperature plasma immersion ion implantation using hollow cathode discharges in small diameter metal tubes

Nanostructures of type-II topological Dirac semimetal NiTe₂

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Letters

Articles

Electronic & Optoelectronic Materials, Devices & Processing

Lithography

Nanometer Science & Technology

Measurement and Characterization

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