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Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
Single electron transistors with e-beam evaporation of SiO2 tunnel barriers
Tutorial on interpreting x-ray photoelectron spectroscopy survey spectra: Questions and answers on spectra from the atomic layer deposition of Al2O3 on silicon
Issues
LETTERS
Broadband UV-assisted thermal annealing of low-k silicon carbonitride films using a C-rich silazane precursor
J. Vac. Sci. Technol. B 36, 060601 (2018)
https://doi.org/10.1116/1.5063294
Review Articles
Future prospects of fluoride based upconversion nanoparticles for emerging applications in biomedical and energy harvesting
Surya P. Tiwari; Sachin K. Maurya; Ram S. Yadav; Abhishek Kumar; Vinod Kumar; Marie-France Joubert; Hendrik C. Swart
J. Vac. Sci. Technol. B 36, 060801 (2018)
https://doi.org/10.1116/1.5044596
Electronic & Optoelectronic Materials, Devices & Processing
Effect of surface treatments on electrical properties of β-Ga2O3
J. Vac. Sci. Technol. B 36, 061201 (2018)
https://doi.org/10.1116/1.5052229
Enhanced cracking in Si/B-doped Si0.70Ge0.30/Si heterostructures via hydrogen trapping effect
J. Vac. Sci. Technol. B 36, 061202 (2018)
https://doi.org/10.1116/1.5044215
Dual-band ultraviolet photodetectors comprising nanostructured MgZnO on ZnO films
J. Vac. Sci. Technol. B 36, 061203 (2018)
https://doi.org/10.1116/1.5048677
TEOS layers for low temperature processing of group IV optoelectronic devices
J. Vac. Sci. Technol. B 36, 061204 (2018)
https://doi.org/10.1116/1.5047909
Solid-source doping by using phosphosilicate glass into p-type bulk Si (100) substrate: Role of the capping SiO2 barrier
Yoshiaki Kikuchi; Antony Peter; Bartlomiej Jan Pawlak; An De Keersgieter; Pierre Eyben; Naoto Horiguchi; Anda Mocuta
J. Vac. Sci. Technol. B 36, 061205 (2018)
https://doi.org/10.1116/1.5053455
Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors
Kazunori Kurishima; Toshihide Nabatame; Nobuhiko Mitoma; Takio Kizu; Shinya Aikawa; Kazuhito Tsukagoshi; Akihiko Ohi; Toyohiro Chikyow; Atsushi Ogura
J. Vac. Sci. Technol. B 36, 061206 (2018)
https://doi.org/10.1116/1.5039665
Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
J. Vac. Sci. Technol. B 36, 061207 (2018)
https://doi.org/10.1116/1.5052620
Effects of Ar+ etching of Cu2ZnSnSe4 thin films: An x-ray photoelectron spectroscopy and photoluminescence study
Michael V. Yakushev; Mikhail A. Sulimov; Ekaterina Skidchenko; Jose Márquez-Prieto; Ian Forbes; Paul R. Edwards; Mikhail V. Kuznetsov; Vadim D. Zhivulko; Olga M. Borodavchenko; Alexander V. Mudryi; Juri Krustok; Robert W. Martin
J. Vac. Sci. Technol. B 36, 061208 (2018)
https://doi.org/10.1116/1.5050243
Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy
J. Vac. Sci. Technol. B 36, 061209 (2018)
https://doi.org/10.1116/1.5045259
Enhancing the focused ion beam etch rate of Ag films by Joule heating
J. Vac. Sci. Technol. B 36, 061210 (2018)
https://doi.org/10.1116/1.5054991
Effects of oxygen-inserted layers and oxide capping layer on dopant activation for the formation of ultrashallow p-n junctions in silicon
Xi Zhang; Daniel Connelly; Hideki Takeuchi; Marek Hytha; Robert J. Mears; Leonard M. Rubin; Tsu-Jae King Liu
J. Vac. Sci. Technol. B 36, 061211 (2018)
https://doi.org/10.1116/1.5062366
Lithography
Nanostructures prepared by vacuum-line deposition of organosilanes through a colloidal mask
J. Vac. Sci. Technol. B 36, 061601 (2018)
https://doi.org/10.1116/1.5051350
Nanometer Science & Technology
Development of ultralight nanocellulose magnets using ultrasonic agitation
J. Vac. Sci. Technol. B 36, 061801 (2018)
https://doi.org/10.1116/1.5049814
Prediction of surface topography due to finite pixel spacing in focused ion beam milling of circular holes and trenches
J. Vac. Sci. Technol. B 36, 061802 (2018)
https://doi.org/10.1116/1.5047107
Microelectronic & Nanoelectronic Devices
Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach
In Special Collection:
Conference Collection: 20th Workshop on Dielectrics in Microelectronics
Samuel Aldana; Pedro García-Fernández; Rocío Romero-Zaliz; Francisco Jiménez-Molinos; Francisco Gómez-Campos; Juan Bautista Roldán
J. Vac. Sci. Technol. B 36, 062201 (2018)
https://doi.org/10.1116/1.5049213
Single electron transistors with e-beam evaporation of SiO2 tunnel barriers
J. Vac. Sci. Technol. B 36, 062202 (2018)
https://doi.org/10.1116/1.5050379
Silver-doped tin oxide for electrical property enhancement in p-type channel thin film transistor
An Hoang-Thuy Nguyen; Manh-Cuong Nguyen; Hyungmin Ji; Jonggyu Cheon; Kyoungmun Yu; Jinhyun Kim; Sangwoo Kim; Seongyong Cho; Rino Choi; Hoai Phuong Pham; Quang Trung Tran
J. Vac. Sci. Technol. B 36, 062203 (2018)
https://doi.org/10.1116/1.5051419
Plasmonics
Effects of annular-cylindrical combined channel Hall thruster length on the discharge characteristics
In Special Collection:
Special Topic Collection: Advanced Nano, and Metamaterials in Space Propulsion
J. Vac. Sci. Technol. B 36, 062601 (2018)
https://doi.org/10.1116/1.5037740
Spintronics and Magnetic Devices
Effect of magnetic field directionality on discharging characteristics of Hall effect thruster with azimuthal diversion rail
In Special Collection:
Special Topic Collection: Advanced Nano, and Metamaterials in Space Propulsion
J. Vac. Sci. Technol. B 36, 062801 (2018)
https://doi.org/10.1116/1.5037215
Measurement and Characterization
Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
In Special Collection:
Conference Collection: 20th Workshop on Dielectrics in Microelectronics
J. Vac. Sci. Technol. B 36, 062901 (2018)
https://doi.org/10.1116/1.5045634
Tutorial on interpreting x-ray photoelectron spectroscopy survey spectra: Questions and answers on spectra from the atomic layer deposition of Al2O3 on silicon
Dhruv Shah; Dhananjay I. Patel; Tuhin Roychowdhury; G. Bruce Rayner; Noel O’Toole; Donald R. Baer; Matthew R. Linford
J. Vac. Sci. Technol. B 36, 062902 (2018)
https://doi.org/10.1116/1.5043297
Reactivity studies and structural properties of Al on compound semiconductor surfaces
J. Vac. Sci. Technol. B 36, 062903 (2018)
https://doi.org/10.1116/1.5053987
Structural characterization of tantalum nitride films as wet etch stop layer in advanced multiwork function metal gate MOSFETs
Petra Mennell; Hamed Parvaneh; Zeynel Bayindir; Dong Hun Kang; Frieder Baumann; Anita Madan; Abner Bello; Ashawaraya Shalini; Mark Klare
J. Vac. Sci. Technol. B 36, 062904 (2018)
https://doi.org/10.1116/1.5044633
Papers from the 62nd International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (62nd EIPBN 2018)
EIPBN Review Articles
Review Article: Review of electrohydrodynamical ion sources and their applications to focused ion beam technology
J. Vac. Sci. Technol. B 36, 06J101 (2018)
https://doi.org/10.1116/1.5047150
Atomic force microscope integrated with a scanning electron microscope for correlative nanofabrication and microscopy
Ivo W. Rangelow; Marcus Kaestner; Tzvetan Ivanov; Ahmad Ahmad; Steve Lenk; Claudia Lenk; Elshad Guliyev; Alexander Reum; Martin Hofmann; Christoph Reuter; Mathias Holz
J. Vac. Sci. Technol. B 36, 06J102 (2018)
https://doi.org/10.1116/1.5048524
Advanced Lithography
Improving the resolution and throughput of achromatic Talbot lithography
J. Vac. Sci. Technol. B 36, 06J501 (2018)
https://doi.org/10.1116/1.5048506
Optimized structure of standard sample with programed defects for pattern inspection using electron beams
J. Vac. Sci. Technol. B 36, 06J502 (2018)
https://doi.org/10.1116/1.5048047
Unbiased roughness measurements: Subtracting out SEM effects, part 2
J. Vac. Sci. Technol. B 36, 06J503 (2018)
https://doi.org/10.1116/1.5046477
Progress in metal organic cluster EUV photoresists
J. Vac. Sci. Technol. B 36, 06J504 (2018)
https://doi.org/10.1116/1.5050942
Biomedical Devices
Investigating the interplay of lateral and height dimensions influencing neuronal processes on nanogrooves
J. Vac. Sci. Technol. B 36, 06J801 (2018)
https://doi.org/10.1116/1.5048069
Charged Particle Optics
Brightness measurements of the nano-aperture ion source
J. Vac. Sci. Technol. B 36, 06J901 (2018)
https://doi.org/10.1116/1.5048054
Variations of the field of view depending on the Si deflector shape in a microcolumn
J. Vac. Sci. Technol. B 36, 06J902 (2018)
https://doi.org/10.1116/1.5048128
E Beam Lithography
Fabrication of astronomical x-ray reflection gratings using thermally activated selective topography equilibration
J. Vac. Sci. Technol. B 36, 06JA01 (2018)
https://doi.org/10.1116/1.5048197
Effects of lithographic parameters in massively parallel electron-beam systems
J. Vac. Sci. Technol. B 36, 06JA03 (2018)
https://doi.org/10.1116/1.5048084
Stochastic simulation of pattern formation in electron beam lithography
J. Vac. Sci. Technol. B 36, 06JA04 (2018)
https://doi.org/10.1116/1.5049757
On the trends and application of pattern density dependent isofocal dose of positive resists for 100 keV electron beam lithography
Gerald G. Lopez; Glen de Villafranca; Mohsen Azadi; Meredith G. Metzler; Kevin Lister; Michael Labella; Chad Eichfeld; Nikola Belic; Ulrich Hofmann
J. Vac. Sci. Technol. B 36, 06JA05 (2018)
https://doi.org/10.1116/1.5048206
Designing an anisotropic noise filter for measuring critical dimension and line edge roughness from scanning electron microscope images
J. Vac. Sci. Technol. B 36, 06JA06 (2018)
https://doi.org/10.1116/1.5048077
Imaging and Characterization
In situ femtosecond pulse laser ablation for large volume 3D analysis in scanning electron microscope systems
J. Vac. Sci. Technol. B 36, 06JB01 (2018)
https://doi.org/10.1116/1.5047806
Materials for Advanced Patterning
Influence of tetramethylammonium hydroxide on niobium nitride thin films
J. Vac. Sci. Technol. B 36, 06JC01 (2018)
https://doi.org/10.1116/1.5047427
Phenol-functionalized polymerization control additives for negative tone epoxide crosslinking molecular resists
J. Vac. Sci. Technol. B 36, 06JC02 (2018)
https://doi.org/10.1116/1.5057442
Nanoimprint
Nanophotonics
Moth-eye antireflection nanostructure on glass for CubeSats
J. Vac. Sci. Technol. B 36, 06JG01 (2018)
https://doi.org/10.1116/1.5050986
NEMS/MEMS
Electrospun charge transport structures for hybrid perovskite solar cells
J. Vac. Sci. Technol. B 36, 06JH01 (2018)
https://doi.org/10.1116/1.5049434
Quantum Electronics
Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method
Masahiro Kashima; Daiki Sato; Atsushi Koizumi; Tomohiro Nishitani; Yoshio Honda; Hiroshi Amano; Hokuto Iijima; Takashi Meguro
J. Vac. Sci. Technol. B 36, 06JK02 (2018)
https://doi.org/10.1116/1.5048061
Scanning Probe Lithography
Theoretical investigation of the enhancement factor for a single field emitter in close proximity to the counter electrode
J. Vac. Sci. Technol. B 36, 06JL01 (2018)
https://doi.org/10.1116/1.5046940
Field emission from diamond nanotips for scanning probe lithography
Martin Hofmann; Claudia Lenk; Tzvetan Ivanov; Ivo W. Rangelow; Alexander Reum; Ahmad Ahmad; Mathias Holz; Eberhard Manske
J. Vac. Sci. Technol. B 36, 06JL02 (2018)
https://doi.org/10.1116/1.5048193
Experimental study of field emission from ultrasharp silicon, diamond, GaN, and tungsten tips in close proximity to the counter electrode
Claudia Lenk; Steve Lenk; Mathias Holz; Elshad Guliyev; Martin Hofmann; Tzvetan Ivanov; Ivo W. Rangelow; Mahmoud Behzadirad; Ashwin K. Rishinaramangalam; Daniel Feezell; Tito Busani
J. Vac. Sci. Technol. B 36, 06JL03 (2018)
https://doi.org/10.1116/1.5048518
Sharp GaN nanowires used as field emitter on active cantilevers for scanning probe lithography
Claudia Lenk; Martin Hofmann; Tzvetan Ivanov; Ahmad Ahmad; Steve Lenk; Ivo W. Rangelow; Alexander Reum; Christoph Reuter; Mathias Holz; Mahmoud Behzadirad; Ashwin K. Rishinaramangalam; Daniel Feezell; Tito Busani
J. Vac. Sci. Technol. B 36, 06JL04 (2018)
https://doi.org/10.1116/1.5048190
Highly parallel scanning tunneling microscope based hydrogen depassivation lithography
John N. Randall; James H. G. Owen; Joseph Lake; Rahul Saini; Ehud Fuchs; Mohammad Mahdavi; S. O. Reza Moheimani; Benjamin Carrion Schaefer
J. Vac. Sci. Technol. B 36, 06JL05 (2018)
https://doi.org/10.1116/1.5047939
Field-emission scanning probe lithography tool for 150 mm wafer
Mathias Holz; Elshad Guliyev; Ahmad Ahmad; Tzvetan Ivanov; Alexander Reum; Martin Hofmann; Claudia Lenk; Marcus Kaestner; Christoph Reuter; Steve Lenk; Ivo W. Rangelow; Nikolay Nikolov
J. Vac. Sci. Technol. B 36, 06JL06 (2018)
https://doi.org/10.1116/1.5048357
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Science challenges and research opportunities for plasma applications in microelectronics
David B. Graves, Catherine B. Labelle, et al.
Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications
A. S. Stodolna, T. W. Mechielsen, et al.