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Volume 35, Issue 5

September 2017

All Issues

ISSN 2166-2746

EISSN 2166-2754

In this Issue

Letters
Review Articles
Electronic & Optoelectronic Materials, Devices & Processing
Energy Conversion and Storage Devices
Lithography
Nanometer Science & Technology
MEMS & NEMS
Microelectronic & Nanoelectronic Devices
Shop Notes

Letters

Impact of fast transient charging and ambient on mobility of WS₂ field-effect transistor

Junghak Park; Hyunsuk Woo; Sanghun Jeon

J. Vac. Sci. Technol. B 35, 050601 (2017) https://doi.org/10.1116/1.4989781

Abstract

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Anodic porous alumina with square holes through lattice conversion of naturally occurring ordered structures

Toshiaki Kondo; Hayato Miyazaki; Takashi Yanagishita; Hideki Masuda

J. Vac. Sci. Technol. B 35, 050602 (2017) https://doi.org/10.1116/1.4999283

Abstract

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Review Articles

Review Article: Tunneling-based graphene electronics: Methods and examples

Vsevolod L. Katkov; Vladimir A. Osipov

J. Vac. Sci. Technol. B 35, 050801 (2017) https://doi.org/10.1116/1.4995380

Abstract

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Electronic & Optoelectronic Materials, Devices & Processing

Annealing of dry etch damage in metallized and bare (-201) Ga₂O₃

Jiancheng Yang; Fan Ren; Rohit Khanna; Kristen Bevlin; Dwarakanath Geerpuram; Li-Chun Tung; Jingyu Lin; Hongxing Jiang; Jonathan Lee; Elena Flitsiyan; Leonid Chernyak; S. J. Pearton; Akito Kuramata

J. Vac. Sci. Technol. B 35, 051201 (2017) https://doi.org/10.1116/1.4986300

Abstract

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CHORUS

Analysis of strain induced carrier confinement with varying passivation thickness of the Al_0.3Ga_0.7N/GaN heterostructure with graded Al_xGa_1-xN buffer on Si (111) substrate

Syed Mukulika Dinara; Saptarsi Ghosh; Sanjay Kr. Jana; Shubhankar Majumdar; Dhrubes Biswas; Sekhar Bhattacharya

J. Vac. Sci. Technol. B 35, 051202 (2017) https://doi.org/10.1116/1.4996735

Abstract

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Enhanced recrystallization and dopant activation of P⁺ ion-implanted super-thin Ge layers by RF hydrogen plasma treatment

Alexei N. Nazarov; Volodymyr O. Yukhymchuk; Yurii V. Gomeniuk; Sergiy B. Kryvyi; Pavel N. Okholin; Petro M. Lytvyn; Vasyl P. Kladko; Volodymyr S. Lysenko; Volodymyr I. Glotov; Illya E. Golentus; Enrico Napolitani; Ray Duffy

J. Vac. Sci. Technol. B 35, 051203 (2017) https://doi.org/10.1116/1.4996139

Abstract

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Influence of different conditions on the electrical performance of amorphous InGaZnO thin-film transistors with HfO₂/SiN_x stacked dielectrics

RuoZheng Wang; ShengLi Wu; DongBo Jia; Qiang Wei; JinTao Zhang

J. Vac. Sci. Technol. B 35, 051204 (2017) https://doi.org/10.1116/1.4997416

Abstract

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Bottom profile degradation mechanism in high aspect ratio feature etching based on pattern transfer observation

Nobuyuki Negishi; Masatoshi Miyake; Ken'etsu Yokogawa; Masatoshi Oyama; Tadamitsu Kanekiyo; Masaru Izawa

J. Vac. Sci. Technol. B 35, 051205 (2017) https://doi.org/10.1116/1.4998943

Abstract

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Near-infrared laser annealing of Ge layers epitaxially grown on Si for high-performance photonic devices

Sho Nagatomo; Yasuhiko Ishikawa; Satohiko Hoshino

J. Vac. Sci. Technol. B 35, 051206 (2017) https://doi.org/10.1116/1.4995321

Abstract

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Effect of composition in Si_1−xGe_x seed layer on the solid phase crystallization of ultrathin amorphous silicon layer

Youngmo Kim; Seungbeom Baek; Yongwoon Jang; Jiwoo Park; Hyunchul Sohn

J. Vac. Sci. Technol. B 35, 051207 (2017) https://doi.org/10.1116/1.4993801

Abstract

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Energy Conversion and Storage Devices

Thermoelectric and optical properties of advanced thermoelectric devices from Ni/Bi₂Te₃/Ni and Ni/Sb₂Te₃/Ni thin films

Satilmis Budak; Zhigang Xiao; Jorden Cole; Dennis Price; Tyler Davis; Tiara Strong; Mohammad A. Alim

J. Vac. Sci. Technol. B 35, 051401 (2017) https://doi.org/10.1116/1.5001046

Abstract

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CHORUS

Lithography

Electron beam lithography using fixed beam moving stage

Iman Khodadad; Nathan Nelson-Fitzpatrick; Kevin Burcham; Arsen Hajian; Simarjeet S. Saini

J. Vac. Sci. Technol. B 35, 051601 (2017) https://doi.org/10.1116/1.4997018

Abstract

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Fabrication of tungsten Fresnel zone plates for hard x-rays using wet etching

Pragya Tiwari; Puspen Mondal; A. K. Srivastava; Himanshu Srivastava; Rajnish Dhawan; Sanjay Rai

J. Vac. Sci. Technol. B 35, 051602 (2017) https://doi.org/10.1116/1.4999933

Abstract

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Proximity effect correction in electron-beam lithography based on computation of critical-development time with swarm intelligence

Chun Nien; Li-Cheng Chang; Jia-Hao Ye; Vin-Cent Su; Chao-Hsin Wu; Chieh-Hsiung Kuan

J. Vac. Sci. Technol. B 35, 051603 (2017) https://doi.org/10.1116/1.5001686

Abstract

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Nanometer Science & Technology

Unexpected validity of Schottky's conjecture for two-stage field emitters: A response via Schwarz–Christoffel transformation

Edgar Marcelino; Thiago A. de Assis; Caio M. C. de Castilho

J. Vac. Sci. Technol. B 35, 051801 (2017) https://doi.org/10.1116/1.4989428

Abstract

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In situ resistance measurements during physical vapor deposition of ultrathin metal films on Si(111) at room temperature

Bernhard Lutzer; Ole Bethge; Christina Zimmermann; Jürgen Smoliner; Emmerich Bertagnolli

J. Vac. Sci. Technol. B 35, 051802 (2017) https://doi.org/10.1116/1.5001669

Abstract

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Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymer

Sebastian U. Engelmann; Robert L. Bruce; Eric A. Joseph; Nicholas C. M. Fuller; William S. Graham; Edmund M. Sikorski; Mahmoud Kohjasteh; Yu Zhu; Masahiro Nakamura; Azumi Ito; Hirokazu Matsumoto; Goh Matsuura; Takefumi Suzuki

J. Vac. Sci. Technol. B 35, 051803 (2017) https://doi.org/10.1116/1.5003824

Abstract

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MEMS & NEMS

ScAlN etch mask for highly selective silicon etching

Michael David Henry; Travis R. Young; Ben Griffin

J. Vac. Sci. Technol. B 35, 052001 (2017) https://doi.org/10.1116/1.4994841

Abstract

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Microelectronic & Nanoelectronic Devices

Extracting scaled barrier field from experiments with conducting large-area field emitters: Considerations by inclusion of the dependence between area of emission and the applied field

Thiago A. de Assis; Caio P. de Castro

J. Vac. Sci. Technol. B 35, 052201 (2017) https://doi.org/10.1116/1.4985646

Abstract

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Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT

Md Rezaul Hasan; Abhishek Motayed; Md Shamiul Fahad; Mulpuri V. Rao

J. Vac. Sci. Technol. B 35, 052202 (2017) https://doi.org/10.1116/1.4998937

Abstract

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CHORUS

Electrical analyses of GaN PIN diodes grown on patterned sapphire substrates

Li-Wei Shan; Zhe-Yu Liu; Min-Pang Lin; Chia-Jui Yu; Kuang-Chien Hsieh; Meng-Chyi Wu

J. Vac. Sci. Technol. B 35, 052203 (2017) https://doi.org/10.1116/1.4997900

Abstract

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Shop Notes

Minimizing open-loop piezoactuator nonlinearity artifacts in atomic force microscope measurements

Chi-Fu Yen; Sanjeevi Sivasankar

J. Vac. Sci. Technol. B 35, 053201 (2017) https://doi.org/10.1116/1.4994315

Abstract

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Letters

Impact of fast transient charging and ambient on mobility of WS₂ field-effect transistor

Anodic porous alumina with square holes through lattice conversion of naturally occurring ordered structures

Review Articles

Review Article: Tunneling-based graphene electronics: Methods and examples

Electronic & Optoelectronic Materials, Devices & Processing

Annealing of dry etch damage in metallized and bare (-201) Ga₂O₃

Analysis of strain induced carrier confinement with varying passivation thickness of the Al_0.3Ga_0.7N/GaN heterostructure with graded Al_xGa_1-xN buffer on Si (111) substrate

Enhanced recrystallization and dopant activation of P⁺ ion-implanted super-thin Ge layers by RF hydrogen plasma treatment

Influence of different conditions on the electrical performance of amorphous InGaZnO thin-film transistors with HfO₂/SiN_x stacked dielectrics

Bottom profile degradation mechanism in high aspect ratio feature etching based on pattern transfer observation

Near-infrared laser annealing of Ge layers epitaxially grown on Si for high-performance photonic devices

Effect of composition in Si_1−xGe_x seed layer on the solid phase crystallization of ultrathin amorphous silicon layer

Energy Conversion and Storage Devices

Thermoelectric and optical properties of advanced thermoelectric devices from Ni/Bi₂Te₃/Ni and Ni/Sb₂Te₃/Ni thin films

Lithography

Electron beam lithography using fixed beam moving stage

Fabrication of tungsten Fresnel zone plates for hard x-rays using wet etching

Proximity effect correction in electron-beam lithography based on computation of critical-development time with swarm intelligence

Nanometer Science & Technology

Unexpected validity of Schottky's conjecture for two-stage field emitters: A response via Schwarz–Christoffel transformation

In situ resistance measurements during physical vapor deposition of ultrathin metal films on Si(111) at room temperature

Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymer

MEMS & NEMS

ScAlN etch mask for highly selective silicon etching

Microelectronic & Nanoelectronic Devices

Extracting scaled barrier field from experiments with conducting large-area field emitters: Considerations by inclusion of the dependence between area of emission and the applied field

Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT

Electrical analyses of GaN PIN diodes grown on patterned sapphire substrates

Shop Notes

Minimizing open-loop piezoactuator nonlinearity artifacts in atomic force microscope measurements

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Issues

Letters

Review Articles

Electronic & Optoelectronic Materials, Devices & Processing

Energy Conversion and Storage Devices

Lithography

Nanometer Science & Technology

MEMS & NEMS

Microelectronic & Nanoelectronic Devices

Shop Notes

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

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