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Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors
Review Article: Advanced nanoscale patterning and material synthesis with gas field helium and neon ion beams
Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems
Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry
Inductively coupled plasma etching of bulk, single-crystal Ga2O3
Probing kinetically excited hot electrons using Schottky diodes
X-ray analysis of metamorphic InxGa1-xAs/InyGa1-yAs superlattices on GaAs (001) substrates
Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors
Issues
May 2017
ISSN 2166-2746
EISSN 2166-2754
Letters
Employing refractive beam shaping in a Lloyd's interference lithography system for uniform periodic nanostructure formation
J. Vac. Sci. Technol. B 35, 030601 (2017)
https://doi.org/10.1116/1.4980134
Low temperature carrier transport mechanism in high-mobility zinc oxynitride thin-film transistors
J. Vac. Sci. Technol. B 35, 030602 (2017)
https://doi.org/10.1116/1.4983528
Review Articles
Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors
J. Vac. Sci. Technol. B 35, 030801 (2017)
https://doi.org/10.1116/1.4979347
Review Article: Advanced nanoscale patterning and material synthesis with gas field helium and neon ion beams
J. Vac. Sci. Technol. B 35, 030802 (2017)
https://doi.org/10.1116/1.4981016
Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems
J. Vac. Sci. Technol. B 35, 030803 (2017)
https://doi.org/10.1116/1.4982736
Electronic & Optoelectronic Materials, Devices & Processing
Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry
J. Vac. Sci. Technol. B 35, 031201 (2017)
https://doi.org/10.1116/1.4979279
Planar nanowires fabricated by thermal gratings on the GaAs(001) surface
J. Vac. Sci. Technol. B 35, 031202 (2017)
https://doi.org/10.1116/1.4979330
Investigation on deep level defects in polycrystalline ZnO thin films
J. Vac. Sci. Technol. B 35, 031203 (2017)
https://doi.org/10.1116/1.4979691
Study of tungsten films deposited by DC sputtering dedicated to integrated heaters
J. Vac. Sci. Technol. B 35, 031204 (2017)
https://doi.org/10.1116/1.4981786
Inductively coupled plasma etching of bulk, single-crystal Ga2O3
Jiancheng Yang; Shihyun Ahn; Fan Ren; Stephen Pearton; Rohit Khanna; Kristen Bevlin; Dwarakanath Geerpuram; Akito Kuramata
J. Vac. Sci. Technol. B 35, 031205 (2017)
https://doi.org/10.1116/1.4982714
High quality semicontinuous deep reactive ion etching of silicon for the creation of x-ray lenses
J. Vac. Sci. Technol. B 35, 031206 (2017)
https://doi.org/10.1116/1.4982712
Preparation and effects of O2 flow on the electrical characteristics of Li doped MgZnO thin film transistors
J. Vac. Sci. Technol. B 35, 031207 (2017)
https://doi.org/10.1116/1.4983086
1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers
J. Vac. Sci. Technol. B 35, 031208 (2017)
https://doi.org/10.1116/1.4983377
Energy Conversion and Storage Devices
Lithography
Effect of resin accumulation on filling process in roll-to-roll UV imprint lithography
J. Vac. Sci. Technol. B 35, 031602 (2017)
https://doi.org/10.1116/1.4982719
Nanometer Science & Technology
SiC emitters for nanoscale vacuum electronics: A systematic study of cathode–anode gap by focused ion beam etching
J. Vac. Sci. Technol. B 35, 031801 (2017)
https://doi.org/10.1116/1.4979049
ToF-SIMS quantification of bromine based insecticide in mosquito netting
J. Vac. Sci. Technol. B 35, 031802 (2017)
https://doi.org/10.1116/1.4983098
Microelectronic & Nanoelectronic Devices
Nanodiamond vacuum field emission microtriode
J. Vac. Sci. Technol. B 35, 032201 (2017)
https://doi.org/10.1116/1.4981018
Organic Electronics and Optoelectronics
Simulation and characterization of short-channel organic thin-film transistors fabricated using ink-jet printing and an imprint process
J. Vac. Sci. Technol. B 35, 032401 (2017)
https://doi.org/10.1116/1.4981930
Shop Notes
Circuit design considerations for current preamplifiers for scanning tunneling microscopy
J. Vac. Sci. Technol. B 35, 033201 (2017)
https://doi.org/10.1116/1.4981017
Handling, transfer, storage, and shipping of commercial thin film hydride disk target samples
J. Vac. Sci. Technol. B 35, 033202 (2017)
https://doi.org/10.1116/1.4983291
Special Issue: AVS 63
Interaction study of nitrogen ion beam with silicon
Marek E. Schmidt; Xiaobin Zhang; Yoshifumi Oshima; Le The Anh; Anto Yasaka; Teruhisa Kanzaki; Manoharan Muruganathan; Masashi Akabori; Tatsuya Shimoda; Hiroshi Mizuta
J. Vac. Sci. Technol. B 35, 03D101 (2017)
https://doi.org/10.1116/1.4977566
Method for patterning poly(acrylic acid) sacrificial layers for use in solder-based self-assembly
J. Vac. Sci. Technol. B 35, 03D102 (2017)
https://doi.org/10.1116/1.4979004
Probing kinetically excited hot electrons using Schottky diodes
Dhruva D. Kulkarni; Daniel A. Field; Daniel B. Cutshall; James E. Harriss; William R. Harrell; Chad E. Sosolik
J. Vac. Sci. Technol. B 35, 03D103 (2017)
https://doi.org/10.1116/1.4979003
Study of device instability of bottom-gate ZnO transistors with sol–gel derived channel layers
Kosala Yapabandara; Vahid Mirkhani; Muhammad Shehzad Sultan; Burcu Ozden; Min P. Khanal; Minseo Park; Shiqiang Wang; Michael C. Hamilton; Yoonsung Chung; Dong-Joo Kim; Mobbassar Hassan Sk
J. Vac. Sci. Technol. B 35, 03D104 (2017)
https://doi.org/10.1116/1.4979321
X-ray analysis of metamorphic InxGa1-xAs/InyGa1-yAs superlattices on GaAs (001) substrates
J. Vac. Sci. Technol. B 35, 03D105 (2017)
https://doi.org/10.1116/1.4979323
Polydimethylsiloxane and polyisoprene-based graphene composites for strain-sensing
J. Vac. Sci. Technol. B 35, 03D106 (2017)
https://doi.org/10.1116/1.4979603
Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors
Min P. Khanal; Burcu Ozden; Kyunghyuk Kim; Sunil Uprety; Vahid Mirkhani; Kosala Yapabandara; Ayayi C. Ahyi; Minseo Park
J. Vac. Sci. Technol. B 35, 03D107 (2017)
https://doi.org/10.1116/1.4979976
Periodically pulsed laser-assisted tunneling may generate terahertz radiation
J. Vac. Sci. Technol. B 35, 03D109 (2017)
https://doi.org/10.1116/1.4979549
Enhancing the electrical conductivity of vacuum-ultraviolet-reduced graphene oxide by multilayered stacking
J. Vac. Sci. Technol. B 35, 03D110 (2017)
https://doi.org/10.1116/1.4982722
Investigation of structural morphology and electrical properties of graphene-C60 hybrids
J. Vac. Sci. Technol. B 35, 03D111 (2017)
https://doi.org/10.1116/1.4982881
Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metals
J. Vac. Sci. Technol. B 35, 03D113 (2017)
https://doi.org/10.1116/1.4980042
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.
Vertical silicon nanowedge formation by repetitive dry and wet anisotropic etching combined with 3D self-aligned sidewall nanopatterning
Yasser Pordeli, Céline Steenge, et al.