Skip Nav Destination

Issues

Select Year

Issue

Letters

Structure compensation and illumination uniformity improvement through inkjet printing in organic light-emitting diode subpixels

Chin-Yen Lin; Li-Wen Wang; Kuan-Hsun Liao; Cheng-Yao Lo

J. Vac. Sci. Technol. B 35, 020601 (2017) https://doi.org/10.1116/1.4974932

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Formation of nickel germanides from Ni layers with thickness below 10 nm

Lukas Jablonka; Tomas Kubart; Daniel Primetzhofer; Ahmad Abedin; Per-Erik Hellström; Mikael Östling; Jean Jordan-Sweet; Christian Lavoie; Shi-Li Zhang; Zhen Zhang

J. Vac. Sci. Technol. B 35, 020602 (2017) https://doi.org/10.1116/1.4975152

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

CHORUS

Fabrication of radiation hardened SOI with embedded Si nanocrystal by ion-cut technique

Yongwei Chang; Shi Cheng; Lihua Dai; Da Chen; Zhongying Xue; Yemin Dong; Xing Wei; Xi Wang

J. Vac. Sci. Technol. B 35, 020603 (2017) https://doi.org/10.1116/1.4977577

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electronic & Optoelectronic Materials, Devices & Processing

Advanced single precursor based pSiCOH k = 2.4 for ULSI interconnects

Deepika Priyadarshini; Son V. Nguyen; Hosadurga Shobha; Eric Liniger; James H.-C. Chen; Huai Huang; Stephan A. Cohen; Alfred Grill

J. Vac. Sci. Technol. B 35, 021201 (2017) https://doi.org/10.1116/1.4974317

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Reduction of persistent photoconduction in Ge-Ga-In-O semiconductors by the incorporation of nitrogen

Hyun-Mo Lee; Kyung-Chul Ok; Hyun-Jun Jeong; Jin-Seong Park; Junhyung Lim; Jozeph Park

J. Vac. Sci. Technol. B 35, 021202 (2017) https://doi.org/10.1116/1.4974925

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Oxidation and oxidative vapor-phase etching of few-layer MoS₂

Timothy N. Walter; Frances Kwok; Hamed Simchi; Haila M. Aldosari; Suzanne E. Mohney

J. Vac. Sci. Technol. B 35, 021203 (2017) https://doi.org/10.1116/1.4975144

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Supplementary Material

Open the PDF for in another window

Cryogenic etching of porous low-k dielectrics in CF₃Br and CF₄ plasmas

Askar Rezvanov; Andrey V. Miakonkikh; Alexey S. Vishnevskiy; Konstantin V. Rudenko; Mikhail R. Baklanov

J. Vac. Sci. Technol. B 35, 021204 (2017) https://doi.org/10.1116/1.4975646

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Properties of pseudomorphic and relaxed germanium_1−xtin_x alloys (x < 0.185) grown by MBE

Ryan Hickey; Nalin Fernando; Stefan Zollner; John Hart; Ramsey Hazbun; James Kolodzey

J. Vac. Sci. Technol. B 35, 021205 (2017) https://doi.org/10.1116/1.4975149

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Sub-10 nm plasma nanopatterning of InGaAs with nearly vertical and smooth sidewalls for advanced n-fin field effect transistors on silicon

Fares Chouchane; Bassem Salem; Guillaume Gay; Mickael Martin; Erwine Pargon; Franck Bassani; Sandrine Arnaud; Sylvain David; Reynald Alcotte; Sébastien Labau; Jérémy Moeyart; Thierry Baron

J. Vac. Sci. Technol. B 35, 021206 (2017) https://doi.org/10.1116/1.4975796

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electronic field effect tuning of the electronic properties of fluorinated epitaxial graphene

Kelly D. McAllister; Michael D. Williams; Sonam D. Sherpa; Dennis W. Hess

J. Vac. Sci. Technol. B 35, 021207 (2017) https://doi.org/10.1116/1.4975801

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

CHORUS

Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices

Shogo Mochizuki; Rainer Loesing; Yun-Yu Wang; Hemanth Jagannathan

J. Vac. Sci. Technol. B 35, 021208 (2017) https://doi.org/10.1116/1.4975923

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Assessment of nitrogen incorporation in dilute GaAsN films using isotopically enriched molecular beam epitaxy and resonant nuclear reaction analysis

John D. Demaree; Stefan P. Svensson; Wendy L. Sarney

J. Vac. Sci. Technol. B 35, 021209 (2017) https://doi.org/10.1116/1.4977022

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Investigation of thin InN/GaN heterostructures with in situ SiN_x dielectric grown by plasma-assisted molecular beam epitaxy

Christos Zervos; Adam Adikimenakis; Petros Beleniotis; Athanasios Kostopoulos; Maria Androulidaki; Katerina Tsagaraki; Maria Kayambaki; George Konstantinidis; Alexandros Georgakilas

J. Vac. Sci. Technol. B 35, 021210 (2017) https://doi.org/10.1116/1.4977606

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Pore surface grafting of porous low-k dielectrics by selective polymers

Askar Rezvanov; Liping Zhang; Mitsuhiro Watanabe; Mikhail B. Krishtab; Lin Zhang; Nigel Hacker; Patrick Verdonck; Silvia Armini; Jean-François G. N. G. de Marneffe

J. Vac. Sci. Technol. B 35, 021211 (2017) https://doi.org/10.1116/1.4978046

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Modification of Schottky barrier properties of Al/p-type Si Schottky rectifiers with graphene-oxide-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) interlayer

Vallivedu Janardhanam; Inapagundla Jyothi; Shim-Hoon Yuk; Chel-Jong Choi; Hyung-Joong Yun; Jonghan Won; Won-Gi Hong; Sung-Nam Lee; Varra Rajagopal Reddy

J. Vac. Sci. Technol. B 35, 021212 (2017) https://doi.org/10.1116/1.4978511

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Lithography

Influence of symmetry and duty cycles on the pattern generation in achromatic Talbot lithography

Shumin Yang; Jun Zhao; Liansheng Wang; Fangyuan Zhu; Chaofan Xue; Haigang Liu; Huazheng Sang; Yanqing Wu; Renzhong Tai

J. Vac. Sci. Technol. B 35, 021601 (2017) https://doi.org/10.1116/1.4974930

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Conformal reversal imprint lithography for polymer nanostructuring over large curved geometries

Mary Nora Dickson; Justin Tsao; Elena I. Liang; Noel I. Navarro; Yash R. Patel; Albert F. Yee

J. Vac. Sci. Technol. B 35, 021602 (2017) https://doi.org/10.1116/1.4974927

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Process development for high resolution hydrogen silsesquioxane patterning using a commercial scanner for extreme ultraviolet lithography

Vishal Desai; Mac Mellish; Stephen Bennett; Nathaniel C. Cady

J. Vac. Sci. Technol. B 35, 021603 (2017) https://doi.org/10.1116/1.4975797

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Nanometer Science & Technology

Fabrication of germanium nanodisk array by neutral beam etching with protein as etching mask

Takuya Fujii; Takeru Okada; Taiga Isoda; Mohd Erman Syazwan; Mohamed-Tahar Chentir; Kohei M. Itoh; Ichiro Yamashita; Seiji Samukawa

J. Vac. Sci. Technol. B 35, 021801 (2017) https://doi.org/10.1116/1.4976524

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Gas-phase diagnostics during H₂ and H₂O plasma treatment of SnO₂ nanomaterials: Implications for surface modification

Erin P. Stuckert; Christopher J. Miller; Ellen R. Fisher

J. Vac. Sci. Technol. B 35, 021802 (2017) https://doi.org/10.1116/1.4976534

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Supplementary Material

Open the PDF for in another window

CHORUS

Sub-100 nm integrated ferroelectric tunnel junction devices using hydrogen silsesquioxane planarization

Mohammad Abuwasib; Jung-Woo Lee; Hyungwoo Lee; Chang-Beom Eom; Alexei Gruverman; Uttam Singisetti

J. Vac. Sci. Technol. B 35, 021803 (2017) https://doi.org/10.1116/1.4978519

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

MEMS & NEMS

Top-down technique for scaling to nano in silicon MEMS

Mustafa Yilmaz; Yasin Kilinc; Gokhan Nadar; Zuhal Tasdemir; Nicole Wollschläger; Werner Österle; Yusuf Leblebici; B. Erdem Alaca

J. Vac. Sci. Technol. B 35, 022001 (2017) https://doi.org/10.1116/1.4978047

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Microelectronic & Nanoelectronic Devices

Effect of growth conditions on interface stability and thermophysical properties of sputtered Cu films on Si with and without WTi barrier layers

Imane Souli; Velislava L. Terziyska; Jozef Keckes; Werner Robl; Johannes Zechner; Christian Mitterer

J. Vac. Sci. Technol. B 35, 022201 (2017) https://doi.org/10.1116/1.4975805

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Enhanced photocathode performance through optimization of film thickness and substrate

Anna Alexander; Nathan A. Moody; Prabhakar R. Bandaru

J. Vac. Sci. Technol. B 35, 022202 (2017) https://doi.org/10.1116/1.4976527

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLa_xTi_yO_z charge trapping layers

Jin-Tsong Jeng; Yan-Lin Li; Chin-Lung Cheng

J. Vac. Sci. Technol. B 35, 022203 (2017) https://doi.org/10.1116/1.4978048

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Fabrication of Mo microcones for volcano-structured double-gate Spindt-type emitter cathodes using triode high power pulsed magnetron sputtering

Takeo Nakano; Tomoki Narita; Kei Oya; Masayoshi Nagao; Hisashi Ohsaki

J. Vac. Sci. Technol. B 35, 022204 (2017) https://doi.org/10.1116/1.4978506

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Shop Notes

Economical rotatable holder for magnetotransport measurements

Avyaya J. Narasimham; Daniel Pennock; Graham J. Potter; Brian Taylor; Vincent P. LaBella

J. Vac. Sci. Technol. B 35, 023201 (2017) https://doi.org/10.1116/1.4974488

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Papers from the 32nd North American Conference on Molecular Beam Epitaxy

Engineering carrier lifetimes in type-II In(Ga)Sb/InAs mid-IR emitters

Lan Yu; Yujun Zhong; Sukrith Dev; Daniel Wasserman

J. Vac. Sci. Technol. B 35, 02B101 (2017) https://doi.org/10.1116/1.4972978

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

CHORUS

Temperature monitoring of narrow bandgap semiconductors

Man Chun Tam; Yinqiu Shi; Denise Gosselink; Marc Jaikissoon; Zbig R. Wasilewski

J. Vac. Sci. Technol. B 35, 02B102 (2017) https://doi.org/10.1116/1.4975926

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Growth of InGaAsP solar cells and their application to triple-junction top cells used in smart stack multijunction solar cells

Takeyoshi Sugaya; Yuki Nagato; Yoshinobu Okano; Ryuji Oshima; Takeshi Tayagaki; Kikuo Makita; Koji Matsubara

J. Vac. Sci. Technol. B 35, 02B103 (2017) https://doi.org/10.1116/1.4975759

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Control of unintentional oxygen incorporation in GaN

Stefan Schmult; Felix Schubert; Steffen Wirth; Andreas Großer; Terence Mittmann; Thomas Mikolajick

J. Vac. Sci. Technol. B 35, 02B104 (2017) https://doi.org/10.1116/1.4975925

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

III-V semiconductor extended short-wave infrared detectors

Gregory R. Savich; Daniel E. Sidor; Xiaoyu Du; Gary W. Wicks; Mukul C. Debnath; Tetsuya D. Mishima; Michael B. Santos; Terry D. Golding; Manish Jain; Adam P. Craig; Andrew R. J. Marshall

J. Vac. Sci. Technol. B 35, 02B105 (2017) https://doi.org/10.1116/1.4975340

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Transport properties of Bi₂(Se_1−xTe_x)₃ thin films grown by molecular beam epitaxy

Yong Wang; Theresa P. Ginley; Chiyu Zhang; Stephanie Law

J. Vac. Sci. Technol. B 35, 02B106 (2017) https://doi.org/10.1116/1.4976622

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

CHORUS

On the study of antimony incorporation in InAs/InAsSb superlattices for infrared sensing

Heather J. Haugan; Gail J. Brown; Joseph A. Peoples

J. Vac. Sci. Technol. B 35, 02B107 (2017) https://doi.org/10.1116/1.4977009

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Controlling color emission of InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

Moab R. Philip; Dipayan D. Choudhary; Mehrdad Djavid; Md Nasiruddin Bhuyian; James Piao; Thi T. Pham; Durgamadhab Misra; Hieu P. T. Nguyen

J. Vac. Sci. Technol. B 35, 02B108 (2017) https://doi.org/10.1116/1.4977174

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE

David F. Storm; Thomas O. McConkie; Matthew T. Hardy; D. Scott Katzer; Neeraj Nepal; David J. Meyer; David J. Smith

J. Vac. Sci. Technol. B 35, 02B109 (2017) https://doi.org/10.1116/1.4977777

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

David F. Storm; Tyler A. Growden; Weidong Zhang; Elliott R. Brown; Neeraj Nepal; D. Scott Katzer; Matthew T. Hardy; Paul R. Berger; David J. Meyer

J. Vac. Sci. Technol. B 35, 02B110 (2017) https://doi.org/10.1116/1.4977779

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Mid-IR resonant cavity detectors

Trevor A. O'Loughlin; Gregory R. Savich; Daniel E. Sidor; Brendan T. Marozas; Terry D. Golding; Keith D. Jamison; Leif Fredin; Burt Fowler; Weerasinghe Priyantha; Gary W. Wicks

J. Vac. Sci. Technol. B 35, 02B111 (2017) https://doi.org/10.1116/1.4977780

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

CHORUS

Threading dislocations in MBE grown AlInSb metamorphic buffers: Revealed and counted

Yinqiu Shi; Denise Gosselink; Vladimir Y. Umansky; Jan L. Weyher; Zbig R. Wasilewski

J. Vac. Sci. Technol. B 35, 02B112 (2017) https://doi.org/10.1116/1.4978025

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

High-resolution x-ray reflection Fourier analysis of metamorphic Si/SiGe quantum wells

Christopher J. K. Richardson; Clayton A. Jackson; Lisa F. Edge; Peter W. Deelman

J. Vac. Sci. Technol. B 35, 02B113 (2017) https://doi.org/10.1116/1.4978595

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

In situ flashes of gallium technique for oxide-free epiready GaSb (100) surface

Sen Mathews; Theodore Schuler-Sandy; Jong Su Kim; Clark Kadlec; Alireza Kazemi; Vinita Dahiya; David A. Ramirez; Stephen A. Myers; Yuliya V. Kuznetsova; Sanjay Krishna

J. Vac. Sci. Technol. B 35, 02B114 (2017) https://doi.org/10.1116/1.4978604

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

MBE growth techniques for InAs-based nBn IR detectors

Daniel E. Sidor; Gregory R. Savich; Brendan T. Marozas; Xiaoyu Du; Trevor A. O'Loughlin; Geoffrey D. Jenkins; William D. Hughes; Christian P. Morath; Vincent M. Cowan; Gary W. Wicks

J. Vac. Sci. Technol. B 35, 02B117 (2017) https://doi.org/10.1116/1.4978389

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Papers from the 32nd North American

MBE growth and digital etch of GaSb/InAs nanowires on Si for logic applications

Katherine Dropiewski; Vadim Tokranov; Michael Yakimov; Serge Oktyabrsky; Steven Bentley; Rohit Galatage

J. Vac. Sci. Technol. B 35, 02B115 (2017) https://doi.org/10.1116/1.4978782

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Articles

Growth of ordered and disordered ZnSnN₂

Robert Allen Makin; Nancy Senabulya; James Mathis; N. Feldberg; P. Miska; Roy Clarke; Steven M. Durbin

J. Vac. Sci. Technol. B 35, 02B116 (2017) https://doi.org/10.1116/1.4978021

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

CHORUS

Papers from the 29th International Vacuum Nanoelectronics Conference

2D/3D image charge for modeling field emission

Kevin L. Jensen; Donald A. Shiffler; John R. Harris; Ian M. Rittersdorf; John J. Petillo

J. Vac. Sci. Technol. B 35, 02C101 (2017) https://doi.org/10.1116/1.4968007

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Delayed photo-emission model for beam optics codes

Kevin L. Jensen; John J. Petillo; Dimitrios N. Panagos; Serguei Ovtchinnikov; Nathan A. Moody

J. Vac. Sci. Technol. B 35, 02C102 (2017) https://doi.org/10.1116/1.4968511

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

CHORUS

Extraction of the characteristics of current-limiting elements from field emission measurement data

Michael Bachmann; Florian Dams; Felix Düsberg; Martin Hofmann; Andreas Pahlke; Christoph Langer; Robert Ławrowski; Christian Prommesberger; Rupert Schreiner; Pavel Serbun; Dirk Lützenkirchen-Hecht; Günter Müller

J. Vac. Sci. Technol. B 35, 02C103 (2017) https://doi.org/10.1116/1.4971768

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Modulation of the work function of graphene by Na and Cl coadsorbed on opposite sides on graphene

Guang Yuan; Xinxiang Song; Hidenori Mimura

J. Vac. Sci. Technol. B 35, 02C104 (2017) https://doi.org/10.1116/1.4972772

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Nonlinear Fowler-Nordheim behavior of a single SnO₂ nanowire

Padmashree D. Joshi; Dilip S. Joag; Dattatray J. Late; Imtiaz S. Mulla

J. Vac. Sci. Technol. B 35, 02C105 (2017) https://doi.org/10.1116/1.4973949

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Bright and durable field-emission source derived from frozen refractory-metal Taylor cones

Gregory Hirsch

J. Vac. Sci. Technol. B 35, 02C106 (2017) https://doi.org/10.1116/1.4976536

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

CHORUS

In situ study of graphene crystallinity effect on field electron emission characteristics

Shuai Tang; Yu Zhang; Ningsheng Xu; Runze Zhan; Li Gong; Peng Zhao; Jian Chen; Chaolun Liang; Jun Chen; Juncong She; Shaozhi Deng

J. Vac. Sci. Technol. B 35, 02C107 (2017) https://doi.org/10.1116/1.4977546

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electrical properties of Cs₃Sb photocathode emitters in panel device applications

Hyo-Soo Jeong; Kris Keller; Brad Culkin

J. Vac. Sci. Technol. B 35, 02C108 (2017) https://doi.org/10.1116/1.4977582

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electron extraction electrode for a high-performance electron beam from carbon nanotube cold cathodes

Jung Su Kang; Kyu Chang Park

J. Vac. Sci. Technol. B 35, 02C109 (2017) https://doi.org/10.1116/1.4978045

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Multiphoton photoemission of gold nanopillars fabricated by carbon nanotube templates

Mahta Monshipouri; Yaser Abdi; Sara Darbari; Soichiro Tsujino

J. Vac. Sci. Technol. B 35, 02C110 (2017) https://doi.org/10.1116/1.4978655

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Issues

Letters

Electronic & Optoelectronic Materials, Devices & Processing

Lithography

Nanometer Science & Technology

MEMS & NEMS

Microelectronic & Nanoelectronic Devices

Shop Notes

Papers from the 32nd North American Conference on Molecular Beam Epitaxy

Papers from the 32nd North American

Articles

Papers from the 29th International Vacuum Nanoelectronics Conference

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only