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Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)
Fabrication and optical behavior of graded-index, moth-eye antireflective structures in CdTe
Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of Ga
Letters
Effects of various bias and temperature stresses on low-frequency noise properties of amorphous InGaZnO thin-film transistors
J. Vac. Sci. Technol. B 35, 010601 (2017)
https://doi.org/10.1116/1.4972524
Soft nanoimprint mold with rigid relief features for improved pattern transfer
J. Vac. Sci. Technol. B 35, 010602 (2017)
https://doi.org/10.1116/1.4972791
Influence of copper nanowires grown in a dielectric layer on the performance of dielectric barrier discharge
J. Vac. Sci. Technol. B 35, 010603 (2017)
https://doi.org/10.1116/1.4973302
Review Articles
Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)
J. Vac. Sci. Technol. B 35, 010801 (2017)
https://doi.org/10.1116/1.4972049
Electronic & Optoelectronic Materials, Devices & Processing
Fabrication and optical behavior of graded-index, moth-eye antireflective structures in CdTe
J. Vac. Sci. Technol. B 35, 011201 (2017)
https://doi.org/10.1116/1.4971770
Comparison of scanning laser annealing and microwave annealing for As+ implanted Si
J. Vac. Sci. Technol. B 35, 011202 (2017)
https://doi.org/10.1116/1.4972051
Electrical properties related to growth defects in metamorphic GaSb films on Si
J. Vac. Sci. Technol. B 35, 011203 (2017)
https://doi.org/10.1116/1.4973215
Influence of SiH4 and pressure on PECVD preparation of silicon films with subwavelength structures
J. Vac. Sci. Technol. B 35, 011204 (2017)
https://doi.org/10.1116/1.4973303
Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
J. Vac. Sci. Technol. B 35, 011205 (2017)
https://doi.org/10.1116/1.4973300
Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1−xOy on InGaZnO4
J. Vac. Sci. Technol. B 35, 011206 (2017)
https://doi.org/10.1116/1.4973882
Current relaxation analysis in AlGaN/GaN high electron mobility transistors
J. Vac. Sci. Technol. B 35, 011207 (2017)
https://doi.org/10.1116/1.4973973
Synthesis and characterization of Ga2O3 nanosheets on 3C-SiC-on-Si by low pressure chemical vapor deposition
J. Vac. Sci. Technol. B 35, 011208 (2017)
https://doi.org/10.1116/1.4974158
Effects of postdeposition annealing on TiO2/GaN/AlGaN/GaN/Si metal-oxide-semiconductor high-electron mobility transistors
J. Vac. Sci. Technol. B 35, 011209 (2017)
https://doi.org/10.1116/1.4973877
Lithography
Transparent and visible light-insensitive acrylic photoresist for negative tone optical lithography
J. Vac. Sci. Technol. B 35, 011601 (2017)
https://doi.org/10.1116/1.4971198
Effect of droplet size, droplet placement, and gas dissolution on throughput and defect rate in UV nanoimprint lithography
J. Vac. Sci. Technol. B 35, 011602 (2017)
https://doi.org/10.1116/1.4971771
Subdiffraction plasmonic lens lithography prototype in stepper mode
J. Vac. Sci. Technol. B 35, 011603 (2017)
https://doi.org/10.1116/1.4972521
Volume-expansion polymerization for UV-curable nanoimprinting
J. Vac. Sci. Technol. B 35, 011604 (2017)
https://doi.org/10.1116/1.4973301
Nanometer Science & Technology
Enhanced field emission properties from carbon nanotube emitters on the nanopatterned substrate
J. Vac. Sci. Technol. B 35, 011802 (2017)
https://doi.org/10.1116/1.4972119
Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of Ga
J. Vac. Sci. Technol. B 35, 011803 (2017)
https://doi.org/10.1116/1.4973340
Microelectronic & Nanoelectronic Devices
Investigations on the long-term performance of gated p-type silicon tip arrays with reproducible and stable field emission behavior
J. Vac. Sci. Technol. B 35, 012201 (2017)
https://doi.org/10.1116/1.4972519
Papers from the 19th Workshop on Dielectrics in Microelectronics (WODIM 2016)
High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stability
J. Vac. Sci. Technol. B 35, 01A102 (2017)
https://doi.org/10.1116/1.4967307
Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices
J. Vac. Sci. Technol. B 35, 01A103 (2017)
https://doi.org/10.1116/1.4967308
Analysis and in situ observation of humidity dependent atomic layer deposited-Al2O3 degradation
J. Vac. Sci. Technol. B 35, 01A104 (2017)
https://doi.org/10.1116/1.4971199
Effects of the extension of conductive filaments, a simulation approach
J. Vac. Sci. Technol. B 35, 01A105 (2017)
https://doi.org/10.1116/1.4971384
Effect of illumination and electric field intensity on the efficiency improvement of amorphous silicon tandem solar cells
J. Vac. Sci. Technol. B 35, 01A106 (2017)
https://doi.org/10.1116/1.4972235
Function-fit model for the rate of conducting filament generation in constant voltage-stressed multilayer oxide stacks
J. Vac. Sci. Technol. B 35, 01A108 (2017)
https://doi.org/10.1116/1.4972873
Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices
J. Vac. Sci. Technol. B 35, 01A109 (2017)
https://doi.org/10.1116/1.4972872
In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
J. Vac. Sci. Technol. B 35, 01A110 (2017)
https://doi.org/10.1116/1.4973372
Reliability improvements of TiN/Al2O3/TiN for linear high voltage metal–insulator–metal capacitors using an optimized thermal treatment
J. Vac. Sci. Technol. B 35, 01A111 (2017)
https://doi.org/10.1116/1.4972232
Applications of clustering model to bimodal distributions for dielectric breakdown
J. Vac. Sci. Technol. B 35, 01A112 (2017)
https://doi.org/10.1116/1.4972871
Transmission microwave spectroscopy for local characterization of dielectric materials
J. Vac. Sci. Technol. B 35, 01A113 (2017)
https://doi.org/10.1116/1.4973635
Impact of low thermal processes on reliability of high-k/metal gate stacks
J. Vac. Sci. Technol. B 35, 01A114 (2017)
https://doi.org/10.1116/1.4973905
Effect of oxide traps on channel transport characteristics in graphene field effect transistors
J. Vac. Sci. Technol. B 35, 01A115 (2017)
https://doi.org/10.1116/1.4973904
Optimization of UV-assisted wet oxidation of GaAs
J. Vac. Sci. Technol. B 35, 01A116 (2017)
https://doi.org/10.1116/1.4974196
Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in double dielectric diodes
J. Vac. Sci. Technol. B 35, 01A117 (2017)
https://doi.org/10.1116/1.4974219
Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric
J. Vac. Sci. Technol. B 35, 01A118 (2017)
https://doi.org/10.1116/1.4974220
