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Amorphous Si/SiO₂ distributed Bragg reflectors with transfer printed single-crystalline Si nanomembranes

Minkyu Cho; Jung-Hun Seo; Deyin Zhao; Jaeseong Lee; Kanglin Xiong; Xin Yin; Yonghao Liu; Shih-Chia Liu; Munho Kim; Tong J. Kim; Xudong Wang; Weidong Zhou; Zhenqiang Ma

J. Vac. Sci. Technol. B 34, 040601 (2016) https://doi.org/10.1116/1.4945998

Abstract

View articletitled, Amorphous Si/SiO2 distributed Bragg reflectors with transfer printed single-crystalline Si nanomembranes

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V-band monolithic microwave integrated circuit with continuous wave output power of >23.5 dBm using conventional AlGaN/GaN-on-Si structure

Dong-Hwan Kim; Su-Keun Eom; Myoung-Jin Kang; Jun-Seok Jeong; Kwang-Seok Seo; Ho-Young Cha

J. Vac. Sci. Technol. B 34, 040602 (2016) https://doi.org/10.1116/1.4947005

Abstract

View articletitled, V-band monolithic microwave integrated circuit with continuous wave output power of >23.5 dBm using conventional AlGaN/GaN-on-Si structure

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Study of copper diffusion in RF magnetron sputtered boron carbon nitride thin films

Adithya Prakash; Kalpathy B. Sundaram

J. Vac. Sci. Technol. B 34, 040603 (2016) https://doi.org/10.1116/1.4948399

Abstract

View articletitled, Study of copper diffusion in RF magnetron sputtered boron carbon nitride thin films

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Resonant cavity germanium photodetector via stacked single-crystalline nanomembranes

Minkyu Cho; Jung-Hun Seo; Munho Kim; Jaeseong Lee; Dong Liu; Weidong Zhou; Zongfu Yu; Zhenqiang Ma

J. Vac. Sci. Technol. B 34, 040604 (2016) https://doi.org/10.1116/1.4948531

Abstract

View articletitled, Resonant cavity germanium photodetector via stacked single-crystalline nanomembranes

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Toward synthesis of oxide films on graphene with sputtering based processes

Patrik Ahlberg; Tomas Nyberg; Shi-Li Zhang; Zhi-Bin Zhang; Ulf Jansson

J. Vac. Sci. Technol. B 34, 040605 (2016) https://doi.org/10.1116/1.4949565

Abstract

View articletitled, Toward synthesis of oxide films on graphene with sputtering based processes

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High-temperature Ta diffusion in the grain boundary of thin Cu films

Shabnam Mardani; Hans Norström; Ulf Smith; Shi-Li Zhang

J. Vac. Sci. Technol. B 34, 040606 (2016) https://doi.org/10.1116/1.4950744

Abstract

View articletitled, High-temperature Ta diffusion in the grain boundary of thin Cu films

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Magnesium-gold binary alloy for organic light-emitting diodes with high corrosion resistance

Hiroya Arai; Hajime Nakanotani; Kei Morimoto; Chihaya Adachi

J. Vac. Sci. Technol. B 34, 040607 (2016) https://doi.org/10.1116/1.4952408

Abstract

View articletitled, Magnesium-gold binary alloy for organic light-emitting diodes with high corrosion resistance

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CHORUS

Tilted ion implantation as a cost-efficient sublithographic patterning technique

Sang Wan Kim; Peng Zheng; Kimihiko Kato; Leonard Rubin; Tsu-Jae King Liu

J. Vac. Sci. Technol. B 34, 040608 (2016) https://doi.org/10.1116/1.4953085

Abstract

View articletitled, Tilted ion implantation as a cost-efficient sublithographic patterning technique

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CHORUS

Compact mirror-tunable laser interference system for wafer-scale patterning of grating structures with flexible periodicity

Yung-Jr Hung; Ping-Chien Chang; Yu-Nung Lin; Jia-Jin Lin

J. Vac. Sci. Technol. B 34, 040609 (2016) https://doi.org/10.1116/1.4955172

Abstract

View articletitled, Compact mirror-tunable laser interference system for wafer-scale patterning of grating structures with flexible periodicity

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Classical momentum gap for electron transport in vacuum and consequences for space charge in thermionic converters with a grid electrode

Amir H. Khoshaman; Alireza Nojeh

J. Vac. Sci. Technol. B 34, 040610 (2016) https://doi.org/10.1116/1.4958801

Abstract

View articletitled, Classical momentum gap for electron transport in vacuum and consequences for space charge in thermionic converters with a grid electrode

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Review Article

Ballistic electron emission microscopy and spectroscopy: Recent results and related techniques

L. Douglas Bell

J. Vac. Sci. Technol. B 34, 040801 (2016) https://doi.org/10.1116/1.4959103

Abstract

View articletitled, Ballistic electron emission microscopy and spectroscopy: Recent results and related techniques

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Electronic & Optoelectronic Materials, Devices & Processing

Nondestructive cleaning of the LaAlO₃/SrTiO₃ surface with ultraviolet light and ozone

Eric Andersson; Pier Paolo Aurino; Dag Winkler; Alexei Kalabukhov

J. Vac. Sci. Technol. B 34, 041201 (2016) https://doi.org/10.1116/1.4944660

Abstract

View articletitled, Nondestructive cleaning of the LaAlO3/SrTiO3 surface with ultraviolet light and ozone

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Investigation of the interface between LPCVD-SiN_x gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs

Zhaoyang Liu; Sen Huang; Qilong Bao; Xinhua Wang; Ke Wei; Haojie Jiang; Hushan Cui; Junfeng Li; Chao Zhao; Xinyu Liu; Jinhan Zhang; Qi Zhou; Wanjun Chen; Bo Zhang; Lifang Jia

J. Vac. Sci. Technol. B 34, 041202 (2016) https://doi.org/10.1116/1.4944662

Abstract

View articletitled, Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs

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Initiation strategies for simultaneous control of antiphase domains and stacking faults in GaAs solar cells on Ge

Joseph Faucher; Taizo Masuda; Minjoo Larry Lee

J. Vac. Sci. Technol. B 34, 041203 (2016) https://doi.org/10.1116/1.4945659

Abstract

View articletitled, Initiation strategies for simultaneous control of antiphase domains and stacking faults in GaAs solar cells on Ge

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Temperature dependence of the dielectric function and interband transitions of pseudomorphic GeSn alloys

Vijay Richard D'Costa; Daniel Schmidt; Wei Wang; Yee-Chia Yeo

J. Vac. Sci. Technol. B 34, 041204 (2016) https://doi.org/10.1116/1.4946759

Abstract

View articletitled, Temperature dependence of the dielectric function and interband transitions of pseudomorphic GeSn alloys

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Effect of porosity and pore size on dielectric constant of organosilicate based low-k films: An analytical approach

Alexander P. Palov; Ekaterina N. Voronina; Tatyana V. Rakhimova; Dmitri V. Lopaev; Sergey M. Zyryanov; Yuri A. Mankelevich; Mikhail B. Krishtab; Mikhail R. Baklanov

J. Vac. Sci. Technol. B 34, 041205 (2016) https://doi.org/10.1116/1.4946838

Abstract

View articletitled, Effect of porosity and pore size on dielectric constant of organosilicate based low-k films: An analytical approach

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In situ monitoring of hydrogen desorption from silicon nanoparticles dispersed in a nonthermal plasma

Thomas Lopez; Lorenzo Mangolini

J. Vac. Sci. Technol. B 34, 041206 (2016) https://doi.org/10.1116/1.4946839

Abstract

View articletitled, In situ monitoring of hydrogen desorption from silicon nanoparticles dispersed in a nonthermal plasma

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Elevated temperature performance of Si-implanted solar-blind β-Ga₂O₃ photodetectors

Shihyun Ahn; Fan Ren; Sooyeoun Oh; Younghun Jung; Jihyun Kim; Michael A. Mastro; Jennifer K. Hite; Charles R. Eddy, Jr.; S. J. Pearton

J. Vac. Sci. Technol. B 34, 041207 (2016) https://doi.org/10.1116/1.4948361

Abstract

View articletitled, Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors

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CHORUS

Direct observation of x-ray radiation-induced damage to SiO₂/Si interface using multiwavelength room temperature photoluminescence

Jae Hyun Kim; Je Young Park; Chang Hwan Lee; Yeo Jin Yoon; Jin San Yoo; Toshikazu Ishigaki; Kitaek Kang; Woo Sik Yoo

J. Vac. Sci. Technol. B 34, 041208 (2016) https://doi.org/10.1116/1.4949518

Abstract

View articletitled, Direct observation of x-ray radiation-induced damage to SiO2/Si interface using multiwavelength room temperature photoluminescence

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X-ray diffraction analysis for step and linearly graded In_xGa_1−xAs/GaAs (001) heterostructures using various hkl reflections

Fahad A. Althowibi; Paul B. Rago; John E. Ayers

J. Vac. Sci. Technol. B 34, 041209 (2016) https://doi.org/10.1116/1.4949517

Abstract

View articletitled, X-ray diffraction analysis for step and linearly graded InxGa1−xAs/GaAs (001) heterostructures using various hkl reflections

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Temperature-dependent electrical instability of p-type SnO thin-film transistors

Jeong-Hwan Lee; Yong-Jin Choi; Chan-Yong Jeong; Chang-Woo Lee; Hyuck-In Kwon

J. Vac. Sci. Technol. B 34, 041210 (2016) https://doi.org/10.1116/1.4949558

Abstract

View articletitled, Temperature-dependent electrical instability of p-type SnO thin-film transistors

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Comparative study of the differential resistance of GaAs- and GaN-based laser diodes

Xiang Li; Zongshun Liu; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Jing Yang; Lingcong Le; Wei Liu; Xiaoguang He; Xiaojing Li; Feng Liang; Liqun Zhang; Jianping Liu; Hui Yang; Yuantao Zhang; Guotong Du

J. Vac. Sci. Technol. B 34, 041211 (2016) https://doi.org/10.1116/1.4950746

Abstract

View articletitled, Comparative study of the differential resistance of GaAs- and GaN-based laser diodes

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Ballistic electron and photocurrent transport in Au/organic/Si(001) diodes with PDI8-CN₂ interlayers

Renato Buzio; Andrea Gerbi; Daniele Marré; Mario Barra; Antonio Cassinese

J. Vac. Sci. Technol. B 34, 041212 (2016) https://doi.org/10.1116/1.4950733

Abstract

View articletitled, Ballistic electron and photocurrent transport in Au/organic/Si(001) diodes with PDI8-CN2 interlayers

Supplementary Material

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Effect of 5 MeV proton irradiation damage on performance of β-Ga₂O₃ photodetectors

Shihyun Ahn; Yi-Hsuan Lin; Fan Ren; Sooyeoun Oh; Younghun Jung; Gwangseok Yang; Jihyun Kim; Michael A. Mastro; Jennifer K. Hite; Charles R. Eddy, Jr.; Stephen J. Pearton

J. Vac. Sci. Technol. B 34, 041213 (2016) https://doi.org/10.1116/1.4950872

Abstract

View articletitled, Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors

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CHORUS

Bipolar resistive switching characteristics of cobalt-doped HfO₂-based memory films

Tingting Guo; Tingting Tan; Zhengtang Liu

J. Vac. Sci. Technol. B 34, 041214 (2016) https://doi.org/10.1116/1.4953084

Abstract

View articletitled, Bipolar resistive switching characteristics of cobalt-doped HfO2-based memory films

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Control of bulk and edge screening effects in two-dimensional arrays of ungated field emitters

John R. Harris; Kevin L. Jensen; Wilkin Tang; Donald A. Shiffler

J. Vac. Sci. Technol. B 34, 041215 (2016) https://doi.org/10.1116/1.4953076

Abstract

View articletitled, Control of bulk and edge screening effects in two-dimensional arrays of ungated field emitters

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Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates

Alexander Y. Polyakov; N. B. Smirnov; A. V. Turutin; I. S. Shemerov; Fan Ren; S. J. Pearton; J. Wayne Johnson

J. Vac. Sci. Technol. B 34, 041216 (2016) https://doi.org/10.1116/1.4953347

Abstract

View articletitled, Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates

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CHORUS

Gold-free contacts on Al_xGa_1-xN/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate

Wai Hoe Tham; Diing Shenp Ang; Lakshmi Kanta Bera; Surani Bin Dolmanan; Thirumaleshwara N. Bhat; Rasanayagam S. Kajen; Hui Ru Tan; Siew Lang Teo; Sudhiranjan Tripathy

J. Vac. Sci. Technol. B 34, 041217 (2016) https://doi.org/10.1116/1.4952403

Abstract

View articletitled, Gold-free contacts on AlxGa1-xN/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate

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Influence of ZnSe capping of CdSe layers in the growth mode of ZnCdMgSe/CdSe/ZnCdMgSe heterostructures

Adrián Darío Alfaro-Martínez; Isaac Hernández-Calderón; Maria C. Tamargo

J. Vac. Sci. Technol. B 34, 041218 (2016) https://doi.org/10.1116/1.4953350

Abstract

View articletitled, Influence of ZnSe capping of CdSe layers in the growth mode of ZnCdMgSe/CdSe/ZnCdMgSe heterostructures

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Bulk crystal growth and surface preparation of NiSb, MnSb, and NiMnSb

Ian Maskery; Christopher W. Burrows; Marc Walker; Ravi P. Singh; Geetha Balakrishnan; Jon A. Duffy; Gavin R. Bell

J. Vac. Sci. Technol. B 34, 041219 (2016) https://doi.org/10.1116/1.4953549

Abstract

View articletitled, Bulk crystal growth and surface preparation of NiSb, MnSb, and NiMnSb

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Integration and fabrication of high-performance Sb-based heterostructure backward diodes with submicron-scale airbridges for terahertz detection

Syed M. Rahman; Zhenguo Jiang; Patrick Fay; Lei Liu

J. Vac. Sci. Technol. B 34, 041220 (2016) https://doi.org/10.1116/1.4953551

Abstract

View articletitled, Integration and fabrication of high-performance Sb-based heterostructure backward diodes with submicron-scale airbridges for terahertz detection

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CHORUS

Surface analysis and cathodoluminescence degradation of undoped ZnO and ZnO:Zn phosphors

Emad Hasabeldaim; Odireleng M. Ntwaeaborwa; Robin E. Kroon; Hendrik C. Swart

J. Vac. Sci. Technol. B 34, 041221 (2016) https://doi.org/10.1116/1.4953561

Abstract

View articletitled, Surface analysis and cathodoluminescence degradation of undoped ZnO and ZnO:Zn phosphors

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On the formation of cleaved mirror facets of GaN-based laser diodes—A comparative study of diamond-tip edge-scribing and laser scribing

Ji Hye Kang; Olaf Krüger; Uwe Spengler; Ute Zeimer; Sven Einfeldt; Michael Kneissl

J. Vac. Sci. Technol. B 34, 041222 (2016) https://doi.org/10.1116/1.4953885

Abstract

View articletitled, On the formation of cleaved mirror facets of GaN-based laser diodes—A comparative study of diamond-tip edge-scribing and laser scribing

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Effects of thickness and V/III ratio of low temperature capping layer growth to the optical properties of InAs quantum dots

Nicholas Weir; Ruizhe Yao; Chi-Sen Lee; Wei Guo

J. Vac. Sci. Technol. B 34, 041223 (2016) https://doi.org/10.1116/1.4954000

Abstract

View articletitled, Effects of thickness and V/III ratio of low temperature capping layer growth to the optical properties of InAs quantum dots

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High aspect ratio and large area metallic nanogrids as transparent electrodes on optoelectronic devices

Etor Pérez de San Román; Iván Prieto; Anabil Chaudhuri; Alexander Neumann; Steven R. J. Brueck; Jose M. Ripalda

J. Vac. Sci. Technol. B 34, 041224 (2016) https://doi.org/10.1116/1.4954229

Abstract

View articletitled, High aspect ratio and large area metallic nanogrids as transparent electrodes on optoelectronic devices

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Nearly lattice-matched Zn₁_-zCd_zSe/Zn₁_-xCd_xSe/Zn₁_-yMg_ySe (z > x) quantum wells for yellow emission

Gerardo Villa-Martínez; Juan Carlos Banthí-Barcenas; Daniel Bahena; Frantisek Sutara; Isaac Hernández-Calderón

J. Vac. Sci. Technol. B 34, 041225 (2016) https://doi.org/10.1116/1.4954267

Abstract

View articletitled, Nearly lattice-matched Zn1-zCdzSe/Zn1-xCdxSe/Zn1-yMgySe (z > x) quantum wells for yellow emission

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Fabrication of GaN hexagonal cones by inductively coupled plasma reactive ion etching

Zhe Liu; Yujin Wang; Xiaoxiang Xia; Haifang Yang; Junjie Li; Changzhi Gu

J. Vac. Sci. Technol. B 34, 041226 (2016) https://doi.org/10.1116/1.4954986

Abstract

View articletitled, Fabrication of GaN hexagonal cones by inductively coupled plasma reactive ion etching

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Auger electron spectroscopy study of semiconductor surfaces: Effect of cleaning in inert atmosphere

Jolien Debehets; Sérgio M. C. Miranda; Pía Homm; Michel Houssa; Marc Seefeldt; Jean-Pierre Locquet; Jin Won Seo

J. Vac. Sci. Technol. B 34, 041227 (2016) https://doi.org/10.1116/1.4955149

Abstract

View articletitled, Auger electron spectroscopy study of semiconductor surfaces: Effect of cleaning in inert atmosphere

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Efficient and ultrafast optical modulation of on-chip thermionic emission using resonant cavity coupled electron emitters

Fatemeh Rezaeifar; Rehan Kapadia

J. Vac. Sci. Technol. B 34, 041228 (2016) https://doi.org/10.1116/1.4955190

Abstract

View articletitled, Efficient and ultrafast optical modulation of on-chip thermionic emission using resonant cavity coupled electron emitters

Supplementary Material

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Selective release of InP heterostructures from InP substrates

Tzu-Hsuan Chang; Wenjuan Fan; Dong Liu; Zhenyang Xia; Zhenqiang Ma; Shihchia Liu; Laxmy Menon; Hongjun Yang; Weidong Zhou; Jesper Berggren; Mattias Hammar

J. Vac. Sci. Technol. B 34, 041229 (2016) https://doi.org/10.1116/1.4958799

Abstract

View articletitled, Selective release of InP heterostructures from InP substrates

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Graphene processing using electron beam assisted metal deposition and masked chemical vapor deposition growth

Andrew Merrell; Feng Liu

J. Vac. Sci. Technol. B 34, 041230 (2016) https://doi.org/10.1116/1.4958795

Abstract

View articletitled, Graphene processing using electron beam assisted metal deposition and masked chemical vapor deposition growth

Supplementary Material

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CHORUS

Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors

Byung-Jae Kim; Shihyun Ahn; Fan Ren; Stephen J. Pearton; Gwangseok Yang; Jihyun Kim

J. Vac. Sci. Technol. B 34, 041231 (2016) https://doi.org/10.1116/1.4959028

Abstract

View articletitled, Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors

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CHORUS

Dielectric and piezoelectric properties of percolative three-phase piezoelectric polymer composites

Udhay Sundar; Kimberly Ann Cook-Chennault; Sankha Banerjee; Eric Refour

J. Vac. Sci. Technol. B 34, 041232 (2016) https://doi.org/10.1116/1.4955315

Abstract

View articletitled, Dielectric and piezoelectric properties of percolative three-phase piezoelectric polymer composites

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CHORUS

Lithography

Point spread function and total process function measured for a variable-shaped electron beam system

Michael Asteiner; Christian Schlemmer; Peter Speckbacher; Karl E. Hoffmann

J. Vac. Sci. Technol. B 34, 041601 (2016) https://doi.org/10.1116/1.4944658

Abstract

View articletitled, Point spread function and total process function measured for a variable-shaped electron beam system

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Dose performance characterization of extreme ultraviolet exposure system using enhanced energy sensitivity by resist contrast method

Insung Kim; JinSeok Heo; Changmin Park; Myeongsu Hwang; Seong-Sue Kim; Jae W. Hahn

J. Vac. Sci. Technol. B 34, 041602 (2016) https://doi.org/10.1116/1.4945806

Abstract

View articletitled, Dose performance characterization of extreme ultraviolet exposure system using enhanced energy sensitivity by resist contrast method

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Novel germanium surface modification for sub-10 nm patterning with electron beam lithography and hydrogen silsesquioxane resist

Anushka S. Gangnaik; Yordan M. Georgiev; Gillian Collins; Justin D. Holmes

J. Vac. Sci. Technol. B 34, 041603 (2016) https://doi.org/10.1116/1.4948916

Abstract

View articletitled, Novel germanium surface modification for sub-10 nm patterning with electron beam lithography and hydrogen silsesquioxane resist

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He plasma pretreatment of organic masking materials for performance improvement during pattern transfer by plasma etching

Dominik Metzler; Florian Weilnboeck; Sebastian Engelmann; Robert L. Bruce; Gottlieb S. Oehrlein

J. Vac. Sci. Technol. B 34, 041604 (2016) https://doi.org/10.1116/1.4949274

Abstract

View articletitled, He plasma pretreatment of organic masking materials for performance improvement during pattern transfer by plasma etching

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CHORUS

Direct e-beam writing of colors on (AgI)_x(AgPO₃)_1−x glass

Kyle E. Jacobs; Placid M. Ferreira

J. Vac. Sci. Technol. B 34, 041605 (2016) https://doi.org/10.1116/1.4950750

Abstract

View articletitled, Direct e-beam writing of colors on (AgI)x(AgPO3)1−x glass

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CHORUS

Chemically amplified molecular resists based on noria derivatives containing adamantyl ester groups for electron beam lithography

Hiroki Yamamoto; Seiichi Tagawa; Takahiro Kozawa; Hiroto Kudo; Kazumasa Okamoto

J. Vac. Sci. Technol. B 34, 041606 (2016) https://doi.org/10.1116/1.4953068

Abstract

View articletitled, Chemically amplified molecular resists based on noria derivatives containing adamantyl ester groups for electron beam lithography

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Sub-30 keV patterning of HafSOx resist: Effects of voltage on resolution, contrast, and sensitivity

Kurtis C. Fairley; Meredith C. Sharps; Gavin Mitchson; Jeffrey Ditto; Darren W. Johnson; David C. Johnson

J. Vac. Sci. Technol. B 34, 041607 (2016) https://doi.org/10.1116/1.4954394

Abstract

View articletitled, Sub-30 keV patterning of HafSOx resist: Effects of voltage on resolution, contrast, and sensitivity

Supplementary Material

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CHORUS

Extreme-ultraviolet plasma source with full, infrared to vacuum ultraviolet spectral filtering, and with power recycling

Kenneth C. Johnson

J. Vac. Sci. Technol. B 34, 041608 (2016) https://doi.org/10.1116/1.4954988

Abstract

View articletitled, Extreme-ultraviolet plasma source with full, infrared to vacuum ultraviolet spectral filtering, and with power recycling

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Development-less deep ultraviolet positive tone photolithography with polymethyl methacrylate

Daniel J. Carbaugh; Jason T. Wright; Parthiban Rajan; Savas Kaya; Faiz Rahman

J. Vac. Sci. Technol. B 34, 041609 (2016) https://doi.org/10.1116/1.4955176

Abstract

View articletitled, Development-less deep ultraviolet positive tone photolithography with polymethyl methacrylate

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Nanometer Science & Technology

Faraday cage angled-etching of nanostructures in bulk dielectrics

Pawel Latawiec; Michael J. Burek; Young-Ik Sohn; Marko Lončar

J. Vac. Sci. Technol. B 34, 041801 (2016) https://doi.org/10.1116/1.4944854

Abstract

View articletitled, Faraday cage angled-etching of nanostructures in bulk dielectrics

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CHORUS

Real-time implementation of the “orthodoxy test” for conformity of current–voltage characteristics with classical field electron emission theory

Anatoly G. Kolosko; Sergey V. Filippov; Pavel A. Romanov; Eugeni O. Popov; Richard G. Forbes

J. Vac. Sci. Technol. B 34, 041802 (2016) https://doi.org/10.1116/1.4946834

Abstract

View articletitled, Real-time implementation of the “orthodoxy test” for conformity of current–voltage characteristics with classical field electron emission theory

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Exfoliated 2D black phosphorus nanosheets: Field emission studies

Sachin R. Suryawanshi; Mahendra A. More; Dattatray J. Late

J. Vac. Sci. Technol. B 34, 041803 (2016) https://doi.org/10.1116/1.4945433

Abstract

View articletitled, Exfoliated 2D black phosphorus nanosheets: Field emission studies

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Kinetic Monte Carlo simulation of GaAs(001) MBE growth considering the V/III flux ratio effect

Oleg A. Ageev; Maxim S. Solodovnik; Sergey V. Balakirev; Mikhail M. Eremenko

J. Vac. Sci. Technol. B 34, 041804 (2016) https://doi.org/10.1116/1.4948514

Abstract

View articletitled, Kinetic Monte Carlo simulation of GaAs(001) MBE growth considering the V/III flux ratio effect

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Effect of vacuum thermal annealing to encapsulated graphene field effect transistors

Konstantinos Alexandrou; Filippos Farmakis; Alexandros Arapis; Nikolaos Georgoulas; Yufeng Hao; James Hone; Ioannis Kymissis

J. Vac. Sci. Technol. B 34, 041805 (2016) https://doi.org/10.1116/1.4952409

Abstract

View articletitled, Effect of vacuum thermal annealing to encapsulated graphene field effect transistors

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CHORUS

Study of the effect of thermal treatment on morphology and chemical composition of silicon-on-insulator

Prabhava S. N. Barimar; Catherine M. Doyle; Borislav Naydenov; John J. Boland

J. Vac. Sci. Technol. B 34, 041806 (2016) https://doi.org/10.1116/1.4955067

Abstract

View articletitled, Study of the effect of thermal treatment on morphology and chemical composition of silicon-on-insulator

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Bioinspired broadband midwavelength infrared antireflection coatings on silicon

Pratik Kothary; Blayne M. Phillips; Sin-Yen Leo; Peng Jiang

J. Vac. Sci. Technol. B 34, 041807 (2016) https://doi.org/10.1116/1.4958794

Abstract

View articletitled, Bioinspired broadband midwavelength infrared antireflection coatings on silicon

Supplementary Material

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CHORUS

MEMS & NEMS

Multiwalled carbon nanotube and graphene–polystyrene nanocomposites for bolometric detection

Ibrahim El-chami; Oberon Dixon-Luinenburg; Behraad Bahreyni

J. Vac. Sci. Technol. B 34, 042001 (2016) https://doi.org/10.1116/1.4945804

Abstract

View articletitled, Multiwalled carbon nanotube and graphene–polystyrene nanocomposites for bolometric detection

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Microelectronic & Nanoelectronic Devices

Design guidelines for nanoscale vacuum field emission transistors

Jungsik Kim; Jiwon Kim; Hyeongwan Oh; M. Meyyappan; Jin-Woo Han; Jeong-Soo Lee

J. Vac. Sci. Technol. B 34, 042201 (2016) https://doi.org/10.1116/1.4944687

Abstract

View articletitled, Design guidelines for nanoscale vacuum field emission transistors

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High emission current of 1000 μA at 4 × 10⁻¹⁰Pa from W⟨310⟩ cold field emitter in electron gun

Keigo Kasuya; Souichi Katagiri; Takashi Ohshima

J. Vac. Sci. Technol. B 34, 042202 (2016) https://doi.org/10.1116/1.4953070

Abstract

View articletitled, High emission current of 1000 μA at 4 × 10−10 Pa from W⟨310⟩ cold field emitter in electron gun

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Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on Si

Subramaniam Arulkumaran; Kumud Ranjan; Geok Ing Ng; John Kennedy; Peter P. Murmu; Thirumaleshwara N. Bhat; Sudhiranjan Tripathy

J. Vac. Sci. Technol. B 34, 042203 (2016) https://doi.org/10.1116/1.4955152

Abstract

View articletitled, Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on Si

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SiO₂ nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes

Wantae Lim; Hyun Kum; Young-Jin Choi; Sung-Hyun Sim; Ji-Hye Yeon; Jung-Sub Kim; Han-Kyu Seong; Nam-Goo Cha; Yong-Il Kim; Young-Soo Park; Geonwook Yoo; Stephen J. Pearton

J. Vac. Sci. Technol. B 34, 042204 (2016) https://doi.org/10.1116/1.4959027

Abstract

View articletitled, SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes

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CHORUS

Papers from the 43rd Conference on the Physics and Chemistry of Surfaces and Interfaces

Modification of the electronic properties of magic In clusters on Si(111)7 × 7 by different environments

Martin Franz; Julia Schmermbeck; Mario Dähne

J. Vac. Sci. Technol. B 34, 04J101 (2016) https://doi.org/10.1116/1.4947265

Abstract

View articletitled, Modification of the electronic properties of magic In clusters on Si(111)7 × 7 by different environments

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Magnetoreflection spectroscopy of monolayer transition-metal dichalcogenide semiconductors in pulsed magnetic fields

Andreas V. Stier; Kathleen M. McCreary; Berend T. Jonker; Junichiro Kono; Scott A. Crooker

J. Vac. Sci. Technol. B 34, 04J102 (2016) https://doi.org/10.1116/1.4948992

Abstract

View articletitled, Magnetoreflection spectroscopy of monolayer transition-metal dichalcogenide semiconductors in pulsed magnetic fields

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CHORUS

Magnesium hydride film formation using subatmospheric pressure H₂ plasma at low temperature

Hiromasa Ohmi; Hiroaki Kakiuchi; Kiyoshi Yasutake

J. Vac. Sci. Technol. B 34, 04J103 (2016) https://doi.org/10.1116/1.4952705

Abstract

View articletitled, Magnesium hydride film formation using subatmospheric pressure H2 plasma at low temperature

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Core–shell carrier and exciton transfer in GaAs/GaNAs coaxial nanowires

Shula Chen; Mattias Jansson; Stanislav Filippov; Fumitaro Ishikawa; Weimin M. Chen; Irina A. Buyanova

J. Vac. Sci. Technol. B 34, 04J104 (2016) https://doi.org/10.1116/1.4953184

Abstract

View articletitled, Core–shell carrier and exciton transfer in GaAs/GaNAs coaxial nanowires

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On the accurate determination of absorption coefficient from reflectanceand transmittance measurements: Application to Fe-doped GaN

David C. Look; Jacob H. Leach

J. Vac. Sci. Technol. B 34, 04J105 (2016) https://doi.org/10.1116/1.4954211

Abstract

View articletitled, On the accurate determination of absorption coefficient from reflectanceand transmittance measurements: Application to Fe-doped GaN

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CHORUS

Thickness characterization of atomically thin WSe₂ on epitaxial graphene by low-energy electron reflectivity oscillations

Sergio C. de la Barrera; Yu-Chuan Lin; Sarah M. Eichfeld; Joshua A. Robinson; Qin Gao; Michael Widom; Randall M. Feenstra

J. Vac. Sci. Technol. B 34, 04J106 (2016) https://doi.org/10.1116/1.4954642

Abstract

View articletitled, Thickness characterization of atomically thin WSe2 on epitaxial graphene by low-energy electron reflectivity oscillations

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CHORUS

Semitransparent ZnO-based UV-active solar cells: Analysis of electrical loss mechanisms

Robert Karsthof; Holger von Wenckstern; Marius Grundmann

J. Vac. Sci. Technol. B 34, 04J107 (2016) https://doi.org/10.1116/1.4955133

Abstract

View articletitled, Semitransparent ZnO-based UV-active solar cells: Analysis of electrical loss mechanisms

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Surface structure of in situ cleaved single crystal Bi₂Se₃ measured by low energy ion scattering

Weimin Zhou; Haoshan Zhu; Jory A. Yarmoff

J. Vac. Sci. Technol. B 34, 04J108 (2016) https://doi.org/10.1116/1.4955134

Abstract

View articletitled, Surface structure of in situ cleaved single crystal Bi2Se3 measured by low energy ion scattering

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Correlation between structural order parameter of epitaxial Fe/Pt multilayer and corresponding perpendicular magnetic anisotropy and orbital magnetic moment upon annealing

Yu-Sheng Chen; Chih-Hao Lee; Hong-Ji Lin

J. Vac. Sci. Technol. B 34, 04J109 (2016) https://doi.org/10.1116/1.4955132

Abstract

View articletitled, Correlation between structural order parameter of epitaxial Fe/Pt multilayer and corresponding perpendicular magnetic anisotropy and orbital magnetic moment upon annealing

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Nanoscale Schottky barrier mapping of thermally evaporated and sputter deposited W/Si(001) diodes using ballistic electron emission microscopy

Westly Nolting; Chris Durcan; Avyaya J. Narasimham; Vincent P. LaBella

J. Vac. Sci. Technol. B 34, 04J110 (2016) https://doi.org/10.1116/1.4958721

Abstract

View articletitled, Nanoscale Schottky barrier mapping of thermally evaporated and sputter deposited W/Si(001) diodes using ballistic electron emission microscopy

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CHORUS

Reduced efficiency droop of nonpolar a-plane (11-20) GaN-based light-emitting diodes by vertical injection geometry

Min Joo Park; Seung Kyu Oh; Tak Jeong; Sukkoo Jung; Joon Seop Kwak

J. Vac. Sci. Technol. B 34, 04J111 (2016) https://doi.org/10.1116/1.4958720

Abstract

View articletitled, Reduced efficiency droop of nonpolar a-plane (11-20) GaN-based light-emitting diodes by vertical injection geometry

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