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High quality extremely thin SOI fabricated by facilitated ion-cut with H-trapping effect

Yongwei Chang; Zhongying Xue; Da Chen; Shi Cheng; Miao Zhang; Zengfeng Di; Xing Wei; Xi Wang

J. Vac. Sci. Technol. B 34, 020601 (2016) https://doi.org/10.1116/1.4943562

Abstract

View articletitled, High quality extremely thin SOI fabricated by facilitated ion-cut with H-trapping effect

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Characterization of curved surface layer by Mueller matrix ellipsometry

Weiqi Li; Hao Jiang; Chuanwei Zhang; Xiuguo Chen; Honggang Gu; Shiyuan Liu

J. Vac. Sci. Technol. B 34, 020602 (2016) https://doi.org/10.1116/1.4943952

Abstract

View articletitled, Characterization of curved surface layer by Mueller matrix ellipsometry

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Review Articles

PECVD low and ultralow dielectric constant materials: From invention and research to products

Alfred Grill

J. Vac. Sci. Technol. B 34, 020801 (2016) https://doi.org/10.1116/1.4943049

Abstract

View articletitled, PECVD low and ultralow dielectric constant materials: From invention and research to products

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Electronic & Optoelectronic Materials, Devices & Processing

Study on bubble defects in roll-to-roll UV imprinting process for micropyramid arrays. I. Experiments

Hao Wu; Peiyun Yi; Linfa Peng; Xinmin Lai

J. Vac. Sci. Technol. B 34, 021201 (2016) https://doi.org/10.1116/1.4941445

Abstract

View articletitled, Study on bubble defects in roll-to-roll UV imprinting process for micropyramid arrays. I. Experiments

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At the edge between metal organic chemical vapor deposition and atomic layer deposition: Fast Atomic Sequential Technique, for high throughput conformal deposition

Fabien Piallat; Julien Vitiello

J. Vac. Sci. Technol. B 34, 021202 (2016) https://doi.org/10.1116/1.4942497

Abstract

View articletitled, At the edge between metal organic chemical vapor deposition and atomic layer deposition: Fast Atomic Sequential Technique, for high throughput conformal deposition

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Electrical characterization of dry and wet processed interface layer in Ge/High-K devices

Y. M. Ding; D. Misra; M. N. Bhuyian; Kandabara Tapily; Robert D. Clark; Steve Consiglio; Cory S. Wajda; Gert J. Leusink

J. Vac. Sci. Technol. B 34, 021203 (2016) https://doi.org/10.1116/1.4943559

Abstract

View articletitled, Electrical characterization of dry and wet processed interface layer in Ge/High-K devices

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Experimental and computational study of zero dimensional metallic behavior at the LaLuO₃/SrTiO₃ interface

Pini Shekhter; Cecile Uzan-Saguy; Jürgen Schubert; Yaron Amouyal; Moshe Eizenberg

J. Vac. Sci. Technol. B 34, 021204 (2016) https://doi.org/10.1116/1.4943570

Abstract

View articletitled, Experimental and computational study of zero dimensional metallic behavior at the LaLuO3/SrTiO3 interface

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Normally-off matrix layout p-GaN gate AlGaN/GaN power HEMT with a through-substrate via process

Hsien-Chin Chiu; Li-Yi Peng; Chih-Wei Yang; Hsiang-Chun Wang; Kai-Di Mai; Hsuan-Ling Kao; Chien-Kai Tung; Tsung-Cheng Chang; Schang-jing Hon; Jia-Ching Lin; Kuo-Jen Chang; Yi-Cheng Cheng

J. Vac. Sci. Technol. B 34, 021205 (2016) https://doi.org/10.1116/1.4943573

Abstract

View articletitled, Normally-off matrix layout p-GaN gate AlGaN/GaN power HEMT with a through-substrate via process

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Enhanced wall-plug efficiency in monolithically integrated vertical light-emitting-diode cells based on III-nitride heterostructures

Hyung Jo Park; Hyo Jung Bae; Jun Beom Park; Jun Seok Ha; Tak Jeong; Jong Hyeob Baek; Seung Hwan Kim; Jae-Hyun Ryou

J. Vac. Sci. Technol. B 34, 021206 (2016) https://doi.org/10.1116/1.4943941

Abstract

View articletitled, Enhanced wall-plug efficiency in monolithically integrated vertical light-emitting-diode cells based on III-nitride heterostructures

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Lithography

Possible mechanisms in atomic force microscope-induced nano-oxidation lithography in epitaxial La_0.67Ba_0.33MnO_3-δ thin films

Grace J. Yong; William E. Vanderlinde; Ekembu Kevin Tanyi; David M. Schaefer; Christopher Stumpf; Rajeswari M. Kolagani

J. Vac. Sci. Technol. B 34, 021601 (2016) https://doi.org/10.1116/1.4941243

Abstract

View articletitled, Possible mechanisms in atomic force microscope-induced nano-oxidation lithography in epitaxial La0.67Ba0.33MnO3-δ thin films

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CHORUS

Control of edge bulge evolution during photoresist reflow and its application to diamond microlens fabrication

Hangyu Liu; Johannes Herrnsdorf; Erdan Gu; Martin D. Dawson

J. Vac. Sci. Technol. B 34, 021602 (2016) https://doi.org/10.1116/1.4943558

Abstract

View articletitled, Control of edge bulge evolution during photoresist reflow and its application to diamond microlens fabrication

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Nanometer Science & Technology

Thermal transport and thermal stress in a molybdenum film–glass substrate system

Tingting Miao; Weigang Ma; Shen Yan; Xing Zhang; Masamichi Kohno; Yasuyuki Takata; Yoshifumi Ikoma

J. Vac. Sci. Technol. B 34, 021801 (2016) https://doi.org/10.1116/1.4941308

Abstract

View articletitled, Thermal transport and thermal stress in a molybdenum film–glass substrate system

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Mechanical properties of TiN coatings studied via nanoindentation and nanoscratch test

Huazhi Zeng; Hai Wang; Jun Shen

J. Vac. Sci. Technol. B 34, 021802 (2016) https://doi.org/10.1116/1.4941932

Abstract

View articletitled, Mechanical properties of TiN coatings studied via nanoindentation and nanoscratch test

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Enhanced field emission properties from oxygen-deficient α-Fe₂O₃ nanorod arrays

Ai-Zhen Liao; Jian-Biao Chen; Cheng-Wei Wang; Xiao-Feng Su; Yan Li; Jian Wang

J. Vac. Sci. Technol. B 34, 021803 (2016) https://doi.org/10.1116/1.4942006

Abstract

View articletitled, Enhanced field emission properties from oxygen-deficient α-Fe2O3 nanorod arrays

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Polymer lenses with antireflection structures prepared using anodic porous alumina molds

Takashi Yanagishita; Takeshi Hidaka; Mari Suzuki; Hideki Masuda

J. Vac. Sci. Technol. B 34, 021804 (2016) https://doi.org/10.1116/1.4943044

Abstract

View articletitled, Polymer lenses with antireflection structures prepared using anodic porous alumina molds

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Pattern transfer to GaAs substrates and epitaxial growth of GaAs nanostructures using self-organized porous templates

Archana Kumari; John Byron Hatch; Chaehyun Kim; Biplob Barman; Jaesuk Kwon; Athos Petrou; Hao Zeng; Hong Luo

J. Vac. Sci. Technol. B 34, 021805 (2016) https://doi.org/10.1116/1.4943920

Abstract

View articletitled, Pattern transfer to GaAs substrates and epitaxial growth of GaAs nanostructures using self-organized porous templates

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Pulsed laser deposition of highly oriented stoichiometric thin films of topological insulator Sb₂Te₃

Biswajit Saha; Pragati Chaturvedi; Anil K. Yadav; Dipankar Saha; Swaroop Ganguly

J. Vac. Sci. Technol. B 34, 021806 (2016) https://doi.org/10.1116/1.4943026

Abstract

View articletitled, Pulsed laser deposition of highly oriented stoichiometric thin films of topological insulator Sb2Te3

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MEMS & NEMS

Micromachined multiple focused-ion-beam devices

Ryo Yoshida; Motoaki Hara; Hiroyuki Oguchi; Hiroki Kuwano

J. Vac. Sci. Technol. B 34, 022001 (2016) https://doi.org/10.1116/1.4943561

Abstract

View articletitled, Micromachined multiple focused-ion-beam devices

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Microelectronic & Nanoelectronic Devices

Effect of excess hafnium on HfO₂ crystallization temperature and leakage current behavior of HfO₂/Si metal-oxide-semiconductor devices

Debaleen Biswas; Manavendra Narayan Singh; Anil Kumar Sinha; Satyaranjan Bhattacharyya; Supratic Chakraborty

J. Vac. Sci. Technol. B 34, 022201 (2016) https://doi.org/10.1116/1.4941247

Abstract

View articletitled, Effect of excess hafnium on HfO2 crystallization temperature and leakage current behavior of HfO2/Si metal-oxide-semiconductor devices

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TiN diffusion barrier failure by the formation of Cu₃Si investigated by electron microscopy and atom probe tomography

Marlene Mühlbacher; Grzegorz Greczynski; Bernhard Sartory; Francisca Mendez-Martin; Nina Schalk; Jun Lu; Lars Hultman; Christian Mitterer

J. Vac. Sci. Technol. B 34, 022202 (2016) https://doi.org/10.1116/1.4942003

Abstract

View articletitled, TiN diffusion barrier failure by the formation of Cu3Si investigated by electron microscopy and atom probe tomography

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Novel low-temperature fabrication process for integrated high-aspect ratio zinc oxide nanowire sensors

William P. Clavijo; Gary M. Atkinson; Carlos E. Castano; Dmitry Pestov

J. Vac. Sci. Technol. B 34, 022203 (2016) https://doi.org/10.1116/1.4943041

Abstract

View articletitled, Novel low-temperature fabrication process for integrated high-aspect ratio zinc oxide nanowire sensors

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Improved resistive switching properties in SiO_x-based resistive random-access memory cell with Ti buffer layer

Sungjun Kim; Seongjae Cho; Byung-Gook Park

J. Vac. Sci. Technol. B 34, 022204 (2016) https://doi.org/10.1116/1.4943560

Abstract

View articletitled, Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer

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28th International Vacuum Nanoelectronics Conference

Electrostatic modeling of an in-plane gated field emission cathode

Lucie Sabaut; Pascal Ponard; Jean-Paul Mazellier; Pierre Legagneux

J. Vac. Sci. Technol. B 34, 02G101 (2016) https://doi.org/10.1116/1.4937908

Abstract

View articletitled, Electrostatic modeling of an in-plane gated field emission cathode

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Improved field emission properties of CuO nanowire arrays by coating of graphene oxide layers

Weiming Yu; Hailong Hu; Dian Zhang; Hang Huang; Tailiang Guo

J. Vac. Sci. Technol. B 34, 02G102 (2016) https://doi.org/10.1116/1.4938485

Abstract

View articletitled, Improved field emission properties of CuO nanowire arrays by coating of graphene oxide layers

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In situ synthesis of metallic nanowire arrays for ionization gauge electron sources

Farough Roustaie; Sebastian Quednau; Florian Dassinger; Helmut F. Schlaak; Marcel Lotz; Stefan Wilfert

J. Vac. Sci. Technol. B 34, 02G103 (2016) https://doi.org/10.1116/1.4939756

Abstract

View articletitled, In situ synthesis of metallic nanowire arrays for ionization gauge electron sources

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Highly stable carbon nanotube cathode for electron beam application

Jung Su Kang; Ji Hwan Hong; Min Tae Chung; Kyu Chang Park

J. Vac. Sci. Technol. B 34, 02G104 (2016) https://doi.org/10.1116/1.4941931

Abstract

View articletitled, Highly stable carbon nanotube cathode for electron beam application

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Highly scalable resistive switching memory in metal nanowire crossbar arrays fabricated by electron beam lithography

Jiebin Niu; Meiyun Zhang; Yang Li; Shibing Long; Hangbing Lv; Qi Liu; Ming Liu

J. Vac. Sci. Technol. B 34, 02G105 (2016) https://doi.org/10.1116/1.4943039

Abstract

View articletitled, Highly scalable resistive switching memory in metal nanowire crossbar arrays fabricated by electron beam lithography

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Improvement of electron field emission properties of nanocrystalline diamond films by a plasma post-treatment process for cathode application in microplasma devices

Sheng-Chang Lin; Chien-Jui Yeh; Keh-Chyang Leou; Divinah Manoharan; I-Nan Lin

J. Vac. Sci. Technol. B 34, 02G106 (2016) https://doi.org/10.1116/1.4944006

Abstract

View articletitled, Improvement of electron field emission properties of nanocrystalline diamond films by a plasma post-treatment process for cathode application in microplasma devices

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Field emission properties of p-type black silicon on pillar structures

Christoph Langer; Christian Prommesberger; Robert Ławrowski; Rupert Schreiner; Pavel Serbun; Günter Müller; Felix Düsberg; Martin Hofmann; Michael Bachmann; Andreas Pahlke

J. Vac. Sci. Technol. B 34, 02G107 (2016) https://doi.org/10.1116/1.4943919

Abstract

View articletitled, Field emission properties of p-type black silicon on pillar structures

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Beam profile measurement of volcano-structured double-gate Spindt-type field emitter arrays

Masayoshi Nagao; Yasuhito Gotoh; Yoichiro Neo; Hidenori Mimura

J. Vac. Sci. Technol. B 34, 02G108 (2016) https://doi.org/10.1116/1.4944453

Abstract

View articletitled, Beam profile measurement of volcano-structured double-gate Spindt-type field emitter arrays

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Papers from the 31st North American Conference on Molecular Beam Epitaxy

High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire

Tin S. Cheng; Andrew Davies; Alex Summerfield; YongJin Cho; Izabela Cebula; Richard J. A. Hill; Christopher J. Mellor; Andrei N. Khlobystov; Takashi Taniguchi; Kenji Watanabe; Peter H. Beton; C. Thomas Foxon; Laurence Eaves; Sergei V. Novikov

J. Vac. Sci. Technol. B 34, 02L101 (2016) https://doi.org/10.1116/1.4938157

Abstract

View articletitled, High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire

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Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source

Sergei V. Novikov; Chris R. Staddon; Josh Whale; Anthony J. Kent; C. Thomas Foxon

J. Vac. Sci. Technol. B 34, 02L102 (2016) https://doi.org/10.1116/1.4940155

Abstract

View articletitled, Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source

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Emission wavelength control in InAs(Sb) quantum dashes-in-a-well structures

Sadhvikas Addamane; Ahmad Mansoori; Noel Dawson; Christopher Hains; Ralph Dawson; Ganesh Balakrishnan

J. Vac. Sci. Technol. B 34, 02L103 (2016) https://doi.org/10.1116/1.4940156

Abstract

View articletitled, Emission wavelength control in InAs(Sb) quantum dashes-in-a-well structures

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Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices

Heather J. Haugan; Gail J. Brown; Benjamin V. Olson; Emil A. Kadlec; Jin K. Kim; Eric A. Shaner

J. Vac. Sci. Technol. B 34, 02L104 (2016) https://doi.org/10.1116/1.4941132

Abstract

View articletitled, Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices

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Growth of Bi₂Se₃ topological insulator films using a selenium cracker source

Theresa P. Ginley; Stephanie Law

J. Vac. Sci. Technol. B 34, 02L105 (2016) https://doi.org/10.1116/1.4941134

Abstract

View articletitled, Growth of Bi2Se3 topological insulator films using a selenium cracker source

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Growth and characterization of GaAs_1−x−ySb_xN_y/GaAs heterostructures for multijunction solar cell applications

Aymeric Maros; Nikolai Faleev; Richard R. King; Christiana B. Honsberg

J. Vac. Sci. Technol. B 34, 02L106 (2016) https://doi.org/10.1116/1.4941424

Abstract

View articletitled, Growth and characterization of GaAs1−x−ySbxNy/GaAs heterostructures for multijunction solar cell applications

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CHORUS

Interface-state-phonon-assisted energy relaxation of hot electrons in CdSe quantum dots

Shengkun Zhang; Iosif Zeylikovich; Taposh K. Gayen; Bidyut Das; Robert R. Alfano; Aidong Shen; Maria C. Tamargo

J. Vac. Sci. Technol. B 34, 02L107 (2016) https://doi.org/10.1116/1.4941138

Abstract

View articletitled, Interface-state-phonon-assisted energy relaxation of hot electrons in CdSe quantum dots

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Self-catalyzed Ga(N)AsP nanowires and GaAsP/GaNAsP core–shell nanowires grown on Si (111) by gas-source molecular beam epitaxy

Rui La; Janet L. Pan; Faebian Bastiman; Charles W. Tu

J. Vac. Sci. Technol. B 34, 02L108 (2016) https://doi.org/10.1116/1.4941133

Abstract

View articletitled, Self-catalyzed Ga(N)AsP nanowires and GaAsP/GaNAsP core–shell nanowires grown on Si (111) by gas-source molecular beam epitaxy

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CHORUS

Structural and optical properties of β-Ga₂O₃ thin films grown by plasma-assisted molecular beam epitaxy

Susmita Ghose; Md. Shafiqur Rahman; Juan Salvador Rojas-Ramirez; Manuel Caro; Ravi Droopad; Abraham Arias; Nicola Nedev

J. Vac. Sci. Technol. B 34, 02L109 (2016) https://doi.org/10.1116/1.4942045

Abstract

View articletitled, Structural and optical properties of β-Ga2O3 thin films grown by plasma-assisted molecular beam epitaxy

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Determination of the depletion layer width and effects on the formation of double-2DEG in AlGaAs/GaAs heterostructures

Irving Eduardo Cortes-Mestizo; Leticia Ithsmel Espinosa-Vega; Jose Angel Espinoza-Figueroa; Alejandro Cisneros-de-la-Rosa; Eric Eugenio-Lopez; Victor Hugo Mendez-Garcia; Edgar Briones; Joel Briones; Luis Zamora-Peredo; Ravindranath Droopad; Cristo Yee-Rendon

J. Vac. Sci. Technol. B 34, 02L110 (2016) https://doi.org/10.1116/1.4942898

Abstract

View articletitled, Determination of the depletion layer width and effects on the formation of double-2DEG in AlGaAs/GaAs heterostructures

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Effects of growth temperature on the incorporation of nitrogen in GaNAs layers

José Ángel Espinoza-Figueroa; Víctor Hugo Méndez-García; Miguel Ángel Vidal; Esteban Cruz-Hernández; Máximo López-López; Salvador Gallardo-Hernández

J. Vac. Sci. Technol. B 34, 02L111 (2016) https://doi.org/10.1116/1.4942900

Abstract

View articletitled, Effects of growth temperature on the incorporation of nitrogen in GaNAs layers

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Liquid-metal-enabled synthesis of aluminum-containing III-nitrides by plasma-assisted molecular beam epitaxy

Yu-Han Liang; Noel T. Nuhfer; Elias Towe

J. Vac. Sci. Technol. B 34, 02L112 (2016) https://doi.org/10.1116/1.4943016

Abstract

View articletitled, Liquid-metal-enabled synthesis of aluminum-containing III-nitrides by plasma-assisted molecular beam epitaxy

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CHORUS

Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures

Aymeric Maros; Nikolai Faleev; Richard R. King; Christiana B. Honsberg; Diana Convey; Hongen Xie; Fernando A. Ponce

J. Vac. Sci. Technol. B 34, 02L113 (2016) https://doi.org/10.1116/1.4942897

Abstract

View articletitled, Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures

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CHORUS

Incorporation of Be dopant in GaAs core and core–shell nanowires by molecular beam epitaxy

Sai Krishna Ojha; Pavan Kumar Kasanaboina; Claude Lewis Reynolds, Jr.; Thomas A. Rawdanowicz; Yang Liu; Ryan M. White; Shanthi Iyer

J. Vac. Sci. Technol. B 34, 02L114 (2016) https://doi.org/10.1116/1.4943600

Abstract

View articletitled, Incorporation of Be dopant in GaAs core and core–shell nanowires by molecular beam epitaxy

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Cubic GaN films grown below the congruent sublimation temperature of (0 0 1) GaAs substrates by plasma-assisted molecular beam epitaxy

Arturo Alanís; Heber Vilchis; Edgar López; Miguel A. Vidal

J. Vac. Sci. Technol. B 34, 02L115 (2016) https://doi.org/10.1116/1.4943661

Abstract

View articletitled, Cubic GaN films grown below the congruent sublimation temperature of (0 0 1) GaAs substrates by plasma-assisted molecular beam epitaxy

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Focused gas beam injection for efficient ammonia-molecular beam epitaxial growth of III-nitride semiconductors

Abderrahim Rahim Boucherif; Maxime Rondeau; Hubert Pelletier; Philippe-Olivier Provost; Abderraouf Boucherif; Christian Dubuc; Hassan Maher; Richard Arès

J. Vac. Sci. Technol. B 34, 02L116 (2016) https://doi.org/10.1116/1.4943921

Abstract

View articletitled, Focused gas beam injection for efficient ammonia-molecular beam epitaxial growth of III-nitride semiconductors

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Growth optimization for self-catalyzed GaAs-based nanowires on metal-induced crystallized amorphous substrate

Dingding Ren; Ida M. Høiaas; Johannes F. Reinertsen; Dasa L. Dheeraj; A. Mazid Munshi; Dong-Chul Kim; Helge Weman; Bjørn-Ove Fimland

J. Vac. Sci. Technol. B 34, 02L117 (2016) https://doi.org/10.1116/1.4943926

Abstract

View articletitled, Growth optimization for self-catalyzed GaAs-based nanowires on metal-induced crystallized amorphous substrate

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MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

Grzegorz Cywiński; Krzesimir Szkudlarek; Piotr Kruszewski; Ivan Yahniuk; Sergey Yatsunenko; Grzegorz Muzioł; Marcin Siekacz; Czesław Skierbiszewski; Sergey Rumyantsev; Wojciech Knap

J. Vac. Sci. Technol. B 34, 02L118 (2016) https://doi.org/10.1116/1.4944320

Abstract

View articletitled, MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

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Structural characterization of AlGaAs:Si/GaAs (631) heterostructures as a function of As pressure

Leticia Ithsmel Espinosa-Vega; Miguel Ángel Vidal-Borbolla; Ángel Gabriel Rodríguez-Vázquez; Irving Eduardo Cortes-Mestizo; Esteban Cruz-Hernández; Víctor Hugo Méndez-García; Satoshi Shimomura; David Vázquez-Cortés

J. Vac. Sci. Technol. B 34, 02L119 (2016) https://doi.org/10.1116/1.4944452

Abstract

View articletitled, Structural characterization of AlGaAs:Si/GaAs (631) heterostructures as a function of As pressure

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Papers from the 17th Canadian Semiconductor Science and Technology Conference (CSSTC2015)

Nucleation and growth of ultrathin BaTiO₃ films on single terminated Nb:SrTiO₃ (100) substrates for ferroelectric tunnel junctions

Fabian Ambriz-Vargas; Ivan Velasco-Davalos; Reji Thomas; Andreas Ruediger

J. Vac. Sci. Technol. B 34, 02M101 (2016) https://doi.org/10.1116/1.4934647

Abstract

View articletitled, Nucleation and growth of ultrathin BaTiO3 films on single terminated Nb:SrTiO3 (100) substrates for ferroelectric tunnel junctions

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Selective dry etching of TiN nanostructures over SiO₂ nanotrenches using a Cl₂/Ar/N₂ inductively coupled plasma

Bruno Lee Sang; Marie-Josée Gour; Maxime Darnon; Serge Ecoffey; Abdelatif Jaouad; Benattou Sadani; Dominique Drouin; Abdelkader Souifi

J. Vac. Sci. Technol. B 34, 02M102 (2016) https://doi.org/10.1116/1.4936885

Abstract

View articletitled, Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma

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Design optimizations of InGaAsN(Sb) subcells for concentrator photovoltaic systems

Ross Cheriton; Matthew M. Wilkins; Pratibha Sharma; Christopher E. Valdivia; Anna H. Trojnar; Henry Schriemer; Karin Hinzer; James Gupta; Boussairi Bouzazi; Gitanjali Kolhatkar; Abderraouf Boucherif; Abdelatif Jaouad; Simon Fafard; Vincent Aimez; Richard Arès

J. Vac. Sci. Technol. B 34, 02M103 (2016) https://doi.org/10.1116/1.4939754

Abstract

View articletitled, Design optimizations of InGaAsN(Sb) subcells for concentrator photovoltaic systems

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Issues

Letters

Review Articles

Electronic & Optoelectronic Materials, Devices & Processing

Lithography

Nanometer Science & Technology

MEMS & NEMS

Microelectronic & Nanoelectronic Devices

28th International Vacuum Nanoelectronics Conference

Papers from the 31st North American Conference on Molecular Beam Epitaxy

Papers from the 17th Canadian Semiconductor Science and Technology Conference (CSSTC2015)

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