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Photonic microstructures in lithium niobate by potassium hydroxide-assisted ion beam-enhanced etching

Reinhard Geiss; Juliane Brandt; Holger Hartung; Andreas Tünnermann; Thomas Pertsch; Ernst-Bernhard Kley; Frank Schrempel

J. Vac. Sci. Technol. B 33, 010601 (2015) https://doi.org/10.1116/1.4902087

Abstract

View articletitled, Photonic microstructures in lithium niobate by potassium hydroxide-assisted ion beam-enhanced etching

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Effects of oxygen doping concentration on resistive switching in NiN-based resistive switching memory

Dong Su Jeon; Ju Hyun Park; Tae Geun Kim

J. Vac. Sci. Technol. B 33, 010602 (2015) https://doi.org/10.1116/1.4904209

Abstract

View articletitled, Effects of oxygen doping concentration on resistive switching in NiN-based resistive switching memory

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Microstructural and electrical investigation of Pd/Au ohmic contact on p-GaN

Sofiane Belahsene; Gilles Patriarche; David Troadec; Suresh Sundaram; Abdallah Ougazzaden; Anthony Martinez; Abderrahim Ramdane

J. Vac. Sci. Technol. B 33, 010603 (2015) https://doi.org/10.1116/1.4905793

Abstract

View articletitled, Microstructural and electrical investigation of Pd/Au ohmic contact on p-GaN

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Electronic & Optoelectronic Materials, Devices & Processing

Study of millisecond laser annealing on recrystallization, activation, and mobility of laser annealed SOI doped via arsenic ion implantation

Tyler J. Michalak; Josh Herman; Adarsh Basavalingappa; Martin Rodgers; Dan França; Christopher Borst

J. Vac. Sci. Technol. B 33, 011201 (2015) https://doi.org/10.1116/1.4902020

Abstract

View articletitled, Study of millisecond laser annealing on recrystallization, activation, and mobility of laser annealed SOI doped via arsenic ion implantation

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Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses

Daeun Lee; Chan-Yong Jeong; Sang-Hun Song; Jin Xiao-Shi; Jong In Kim; Jong-Ho Lee; Hyuck-In Kwon

J. Vac. Sci. Technol. B 33, 011202 (2015) https://doi.org/10.1116/1.4903527

Abstract

View articletitled, Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses

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Confocal sputtering of conformal α-β phase W films on etched Al features

John Mark Kreikebaum; Blas Cabrera; Jeffrey J. Yen; Paul L. Brink; Matt Cherry; Astrid Tomada; Betty A. Young

J. Vac. Sci. Technol. B 33, 011203 (2015) https://doi.org/10.1116/1.4904422

Abstract

View articletitled, Confocal sputtering of conformal α-β phase W films on etched Al features

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CHORUS

Cyclopentadienyliron dicarbonyl dimer carbon nanotube synthesis

Andrew M. Zeidell; Nathanael D. Cox; Shawn M. Huston; Jamie E. Rossi; Brian J. Landi; Brad R. Conrad

J. Vac. Sci. Technol. B 33, 011204 (2015) https://doi.org/10.1116/1.4904743

Abstract

View articletitled, Cyclopentadienyliron dicarbonyl dimer carbon nanotube synthesis

Supplementary Material

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InGaN/silicon heterojunction based narrow band near-infrared detector

Rajeev Pillai; David Starikov; Jateen Gandhi; Ananya Debnath; Ruiteng Li; Christopher Boney; Abdelhak Bensaoula

J. Vac. Sci. Technol. B 33, 011205 (2015) https://doi.org/10.1116/1.4904760

Abstract

View articletitled, InGaN/silicon heterojunction based narrow band near-infrared detector

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Determination of GaN polarity on periodically oriented surfaces

Josephus D. Ferguson; Michael A. Reshchikov; Alison A. Baski; Jennifer K. Hite; Michael A. Mastro; Charles R. Eddy, Jr.

J. Vac. Sci. Technol. B 33, 011206 (2015) https://doi.org/10.1116/1.4904742

Abstract

View articletitled, Determination of GaN polarity on periodically oriented surfaces

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Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy

Shi Liu; Xin-Hao Zhao; Calli Campbell; Michael J. DiNezza; Yuan Zhao; Yong-Hang Zhang

J. Vac. Sci. Technol. B 33, 011207 (2015) https://doi.org/10.1116/1.4905289

Abstract

View articletitled, Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy

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Control of InGaAs and InAs facets using metal modulation epitaxy

Mark A. Wistey; Ashish K. Baraskar; Uttam Singisetti; Greg J. Burek; Byungha Shin; Eunji Kim; Paul C. McIntyre; Arthur C. Gossard; Mark J. W. Rodwell

J. Vac. Sci. Technol. B 33, 011208 (2015) https://doi.org/10.1116/1.4905497

Abstract

View articletitled, Control of InGaAs and InAs facets using metal modulation epitaxy

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Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes

Lingcong Le; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaojing Li; Xiaoguang He; Jianping Liu; Shuming Zhang; Hui Yang

J. Vac. Sci. Technol. B 33, 011209 (2015) https://doi.org/10.1116/1.4905430

Abstract

View articletitled, Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes

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Lithography

Investigation of resist filling profile evolution in microimprint lithography

Du Jun; Wei Zhengying; Chu Huali; Zhang Yubin

J. Vac. Sci. Technol. B 33, 011601 (2015) https://doi.org/10.1116/1.4906100

Abstract

View articletitled, Investigation of resist filling profile evolution in microimprint lithography

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Nanometer Science & Technology

Dose accumulation and 3D imaging with He⁺ ions

Lucille A. Giannuzzi

J. Vac. Sci. Technol. B 33, 011801 (2015) https://doi.org/10.1116/1.4905091

Abstract

View articletitled, Dose accumulation and 3D imaging with He+ ions

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Simple, effective fabrication of layered carbon nanotube/graphene hybrid field emitters by electrophoretic deposition

Xuda Hong; Yao Chen; Peter Z. Wu; Hairong Zheng

J. Vac. Sci. Technol. B 33, 011802 (2015) https://doi.org/10.1116/1.4906041

Abstract

View articletitled, Simple, effective fabrication of layered carbon nanotube/graphene hybrid field emitters by electrophoretic deposition

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Microelectronic & Nanoelectronic Devices

Quantitative characterization of field emission parameters: Application to statistical analysis of individual carbon nanotubes/nanofibers

Florian Andrianiazy; Jean-Paul Mazellier; Lucie Sabaut; Laurent Gangloff; Pierre Legagneux; Oliver Gröning

J. Vac. Sci. Technol. B 33, 012201 (2015) https://doi.org/10.1116/1.4902019

Abstract

View articletitled, Quantitative characterization of field emission parameters: Application to statistical analysis of individual carbon nanotubes/nanofibers

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Etching of Ag and Au films in CH₄-based plasmas at low temperature

Tae-Seop Choi; Dennis W. Hess

J. Vac. Sci. Technol. B 33, 012202 (2015) https://doi.org/10.1116/1.4902332

Abstract

View articletitled, Etching of Ag and Au films in CH4-based plasmas at low temperature

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Permittivity of SiO₂ for estimating capacitive delays in focused ion beam circuit edit

David W. Niles; James Stout; Richard Christensen; Richard Rodgers

J. Vac. Sci. Technol. B 33, 012203 (2015) https://doi.org/10.1116/1.4904757

Abstract

View articletitled, Permittivity of SiO2 for estimating capacitive delays in focused ion beam circuit edit

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Field emission of MgO-coated graphene sheets prepared by electrophoretic deposition

Yaping Long; Baoqing Zeng; Jianlong Liu; Yun Yang; Nannan Li; Zhe Wu

J. Vac. Sci. Technol. B 33, 012204 (2015) https://doi.org/10.1116/1.4905094

Abstract

View articletitled, Field emission of MgO-coated graphene sheets prepared by electrophoretic deposition

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Active-matrix Spindt-type field emitter array with faster response time for image sensor with high-gain avalanche rushing amorphous photoconductor target

Yuki Honda; Masakazu Nanba; Kazunori Miyakawa; Misao Kubota; Norifumi Egami

J. Vac. Sci. Technol. B 33, 012205 (2015) https://doi.org/10.1116/1.4906103

Abstract

View articletitled, Active-matrix Spindt-type field emitter array with faster response time for image sensor with high-gain avalanche rushing amorphous photoconductor target

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Brief Reports and Comments

Demonstration of NOx gas sensing for Pd/ZnO/GaN heterojunction diodes

Makoto Miyoshi; Shu Fujita; Takashi Egawa

J. Vac. Sci. Technol. B 33, 013001 (2015) https://doi.org/10.1116/1.4906032

Abstract

View articletitled, Demonstration of NOx gas sensing for Pd/ZnO/GaN heterojunction diodes

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Shop Notes

Enhanced positioning precision and in situ macroscopic contacts for shadow-evaporated nanostructures

Dominik Stöffler; Regina Hoffmann-Vogel

J. Vac. Sci. Technol. B 33, 013201 (2015) https://doi.org/10.1116/1.4905092

Abstract

View articletitled, Enhanced positioning precision and in situ macroscopic contacts for shadow-evaporated nanostructures

Supplementary Material

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18th Workshop on Dielectrics in Microelectronics (18th WoDiM 2014)

Low-temperature plasma-enhanced atomic layer deposition of HfO₂/Al₂O₃ nanolaminate structure on Si

Duo Cao; Xinhong Cheng; Li Zheng; Dawei Xu; Zhongjian Wang; Chao Xia; Lingyan Shen; Yuehui Yu; DaShen Shen

J. Vac. Sci. Technol. B 33, 01A101 (2015) https://doi.org/10.1116/1.4895010

Abstract

View articletitled, Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si

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Modeling of the switching I-V characteristics in ultrathin (5 nm) atomic layer deposited HfO₂ films using the logistic hysteron

Julio Blasco; Peter Jančovič; Karol Fröhlich; Jordi Suñé; Enrique Miranda

J. Vac. Sci. Technol. B 33, 01A102 (2015) https://doi.org/10.1116/1.4900599

Abstract

View articletitled, Modeling of the switching I-V characteristics in ultrathin (5 nm) atomic layer deposited HfO2 films using the logistic hysteron

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Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors

Tobias Erlbacher; Holger Schwarzmann; Anton J. Bauer; Gottfried H. Döhler; Martin Schreivogel; Theresa Lutz; Francesco H. Guillén; Jürgen Graf; Richard Fix; Lothar Frey

J. Vac. Sci. Technol. B 33, 01A103 (2015) https://doi.org/10.1116/1.4903054

Abstract

View articletitled, Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors

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Hexagonal LaLuO₃ as high-κ dielectric

Anna Schäfer; Fabian Wendt; Siegfried Mantl; Hilde Hardtdegen; Martin Mikulics; Jürgen Schubert; Martina Luysberg; Astrid Besmehn; Gang Niu; Thomas Schroeder

J. Vac. Sci. Technol. B 33, 01A104 (2015) https://doi.org/10.1116/1.4904401

Abstract

View articletitled, Hexagonal LaLuO3 as high-κ dielectric

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Adjusting the forming step for resistive switching in Nb₂O₅ by ion irradiation

Helge Wylezich; Hannes Mähne; Anett Heinrich; Stefan Slesazeck; Jura Rensberg; Carsten Ronning; Peter Zahn; Thomas Mikolajick

J. Vac. Sci. Technol. B 33, 01A105 (2015) https://doi.org/10.1116/1.4904969

Abstract

View articletitled, Adjusting the forming step for resistive switching in Nb2O5 by ion irradiation

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Impact of postdeposition annealing upon film properties of atomic layer deposition-grown Al₂O₃ on GaN

Annett Winzer; Nadine Szabó; Andre Wachowiak; Paul Matthias Jordan; Johannes Heitmann; Thomas Mikolajick

J. Vac. Sci. Technol. B 33, 01A106 (2015) https://doi.org/10.1116/1.4904968

Abstract

View articletitled, Impact of postdeposition annealing upon film properties of atomic layer deposition-grown Al2O3 on GaN

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Role of the electrode metal, waveform geometry, temperature, and postdeposition treatment on SET and RESET of HfO₂-based resistive random access memory 1R-cells: Experimental aspects

Paolo Lorenzi; Rosario Rao; Fernanda Irrera

J. Vac. Sci. Technol. B 33, 01A107 (2015) https://doi.org/10.1116/1.4905426

Abstract

View articletitled, Role of the electrode metal, waveform geometry, temperature, and postdeposition treatment on SET and RESET of HfO2-based resistive random access memory 1R-cells: Experimental aspects

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Resistive switching in nonplanar HfO₂-based structures with variable series resistance

Karol Čičo; Peter Jančovič; Jan Dérer; Vasilij Šmatko; Alica Rosová; Michal Blaho; Boris Hudec; Dagmar Gregušová; Karol Fröhlich

J. Vac. Sci. Technol. B 33, 01A108 (2015) https://doi.org/10.1116/1.4905727

Abstract

View articletitled, Resistive switching in nonplanar HfO2-based structures with variable series resistance

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Graphene based electron field emitter

Christian Wenger; Julia Kitzmann; André Wolff; Mirko Fraschke; Christian Walczyk; Gregorz Lupina; Wolfgang Mehr; Marcel Junige; Matthias Albert; Johann W. Bartha

J. Vac. Sci. Technol. B 33, 01A109 (2015) https://doi.org/10.1116/1.4905937

Abstract

View articletitled, Graphene based electron field emitter

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Direct growth of HfO₂ on graphene by CVD

Mindaugas Lukosius; Jarek Dabrowski; Andre Wolff; David Kaiser; Wolfgang Mehr; Grzegorz Lupina

J. Vac. Sci. Technol. B 33, 01A110 (2015) https://doi.org/10.1116/1.4905728

Abstract

View articletitled, Direct growth of HfO2 on graphene by CVD

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III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O₂ plasma-oxidized GaAs cap

Filip Gucmann; Róbert Kúdela; Peter Kordoš; Edmund Dobročka; Štefan Gaži; Ján Dérer; Jozef Liday; Peter Vogrinčič; Dagmar Gregušová

J. Vac. Sci. Technol. B 33, 01A111 (2015) https://doi.org/10.1116/1.4905938

Abstract

View articletitled, III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap

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Silicon nitride, a high potential dielectric for 600 V integrated RC-snubber applications

Florian Krach; Holger Schwarzmann; Anton J. Bauer; Tobias Erlbacher; Lothar Frey

J. Vac. Sci. Technol. B 33, 01A112 (2015) https://doi.org/10.1116/1.4906082

Abstract

View articletitled, Silicon nitride, a high potential dielectric for 600 V integrated RC-snubber applications

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Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices

Robert Mroczyński; Magdalena Szymańska; Wojciech Głuszewski

J. Vac. Sci. Technol. B 33, 01A113 (2015) https://doi.org/10.1116/1.4906090

Abstract

View articletitled, Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices

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Issues

Letters

Electronic & Optoelectronic Materials, Devices & Processing

Lithography

Nanometer Science & Technology

Microelectronic & Nanoelectronic Devices

Brief Reports and Comments

Shop Notes

18th Workshop on Dielectrics in Microelectronics (18th WoDiM 2014)

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