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Issues
September 2014
ISSN 2166-2746
EISSN 2166-2754
Letters
Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor deposition
J. Vac. Sci. Technol. B 32, 050601 (2014)
https://doi.org/10.1116/1.4892519
Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions
J. Vac. Sci. Technol. B 32, 050602 (2014)
https://doi.org/10.1116/1.4895840
Electronic & Optoelectronic Materials, Devices & Processing
Tunable electrical properties of TaNx thin films grown by ionized physical vapor deposition
Miri Choi; Catherine Dubourdieu; Andrew J. Kellock; Kam Leung Lee; Richard A. Haight; Adam Pyzyna; Martin M. Frank; Alexander A. Demkov; Vijay Narayanan
J. Vac. Sci. Technol. B 32, 051202 (2014)
https://doi.org/10.1116/1.4891108
Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors
Travis Anderson; Andrew Koehler; Ya-Hsi Hwang; Yueh-Ling Hsieh; Shun Li; Fan Ren; Jerry Wayne Johnson; Stephen J. Pearton
J. Vac. Sci. Technol. B 32, 051203 (2014)
https://doi.org/10.1116/1.4891629
High breakdown voltage in AlN/GaN metal–insulator–semiconductor high-electron-mobility transistors
Ya-Hsi Hwang; Shihyun Ahn; Chen Dong; Fan Ren; Brent P. Gila; David Hays; Stephen J. Pearton; Chien-Fong Lo; Jerry W. Johnson
J. Vac. Sci. Technol. B 32, 051204 (2014)
https://doi.org/10.1116/1.4891966
Effect of BCl3 in chlorine-based plasma on etching 4H-SiC for photoconductive semiconductor switch applications
J. Vac. Sci. Technol. B 32, 051205 (2014)
https://doi.org/10.1116/1.4892172
Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties
Shailesh Madisetti; Vadim Tokranov; Andrew Greene; Michael Yakimov; Makoto Hirayama; Serge Oktyabrsky; Steven Bentley; Ajey P. Jacob
J. Vac. Sci. Technol. B 32, 051206 (2014)
https://doi.org/10.1116/1.4892797
Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition
Xiaoguang He; Degang Zhao; Desheng Jiang; Jianjun Zhu; Ping Chen; Zongshun Liu; Lingcong Le; Jing Yang; Xiaojing Li; Shuming Zhang; Hui Yang
J. Vac. Sci. Technol. B 32, 051207 (2014)
https://doi.org/10.1116/1.4892786
Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors
Hemant Ghadi; Akshay Agarwal; Sourav Adhikary; Binita Tongbram; Arjun Mandal; Subhananda Chakrabarti; Naresh Babu Pendyala; Sachin Prajapati; Ashwani Kumar
J. Vac. Sci. Technol. B 32, 051208 (2014)
https://doi.org/10.1116/1.4894461
Composition and interface analysis of InGaN/GaN multiquantum-wells on GaN substrates using atom probe tomography
Fang Liu; Li Huang; Robert F. Davis; Lisa M. Porter; Daniel K. Schreiber; Satyanarayana V. N. T. Kuchibatla; Vaithiyalingam Shutthanandan; Suntharampillai Thevuthasan; Edward A. Preble; Tania Paskova; Keith R. Evans
J. Vac. Sci. Technol. B 32, 051209 (2014)
https://doi.org/10.1116/1.4893976
Optical conductivity of Ni1−xPtxSi monosilicides (0 < x < 0.3) from spectroscopic ellipsometry
J. Vac. Sci. Technol. B 32, 051210 (2014)
https://doi.org/10.1116/1.4895111
Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
J. Vac. Sci. Technol. B 32, 051211 (2014)
https://doi.org/10.1116/1.4895112
Structural defects responsible for excessive leakage current in Schottky diodes prepared on undoped n-GaN films grown by hydride vapor phase epitaxy
Alexander Y. Polyakov; Eugene B. Yakimov; Nikolai B. Smirnov; Anatoliy V. Govorkov; Alexander S. Usikov; Heikki Helava; Yuri N. Makarov; In-Hwan Lee
J. Vac. Sci. Technol. B 32, 051212 (2014)
https://doi.org/10.1116/1.4895658
Simple colloidal lithography method to fabricate large-area moth-eye antireflective structures on Si, Ge, and GaAs for IR applications
J. Vac. Sci. Technol. B 32, 051213 (2014)
https://doi.org/10.1116/1.4895966
Lithography
Tunable daughter molds from a single Si master grating mold
Shreya Kundu; Su Hui Lim; Ramakrishnan Ganesan; Hazrat Hussain; Mohammad S. M. Saifullah; Hyunsoo Yang; Ghim Wei Ho; Charanjit S. Bhatia
J. Vac. Sci. Technol. B 32, 051601 (2014)
https://doi.org/10.1116/1.4892063
Nanometer Science & Technology
Optical system for a multiple-beam scanning electron microscope
J. Vac. Sci. Technol. B 32, 051801 (2014)
https://doi.org/10.1116/1.4891961
Development of gasbag-assisted ultraviolet-based imprinting process for replication of microstructures onto cylindrical surface
J. Vac. Sci. Technol. B 32, 051802 (2014)
https://doi.org/10.1116/1.4891920
Dynamic control of local field emission current from carbon nanowalls
J. Vac. Sci. Technol. B 32, 051803 (2014)
https://doi.org/10.1116/1.4893540
Light extraction enhancement in GaN-based vertical light-emitting diodes with hemispherical bumps
J. Vac. Sci. Technol. B 32, 051804 (2014)
https://doi.org/10.1116/1.4893437
Density-tunable non–close-packed monolayer of silica nanospheres prepared by single-step freeze-drying
J. Vac. Sci. Technol. B 32, 051805 (2014)
https://doi.org/10.1116/1.4895037
Development of plasma etching processes to pattern sub-15 nm features with PS-b-PMMA block copolymer masks: Application to advanced CMOS technology
Michaël Delalande; Gilles Cunge; Thierry Chevolleau; Philippe Bézard; Sophie Archambault; Olivier Joubert; Xavier Chevalier; Raluca Tiron
J. Vac. Sci. Technol. B 32, 051806 (2014)
https://doi.org/10.1116/1.4895334
Large area infrared frequency selective surface with dimensions reproducible by optical lithography
J. Vac. Sci. Technol. B 32, 051807 (2014)
https://doi.org/10.1116/1.4895663
Characterization of Ni thin films following thermal oxidation in air
Luis De Los Santos Valladares; Adrian Ionescu; Stuart Holmes; Crispin H. W. Barnes; Angel Bustamante Domínguez; Oswaldo Avalos Quispe; Juan C. González; Silvia Milana; Matteo Barbone; Andrea C. Ferrari; Henry Ramos; Yutaka Majima
J. Vac. Sci. Technol. B 32, 051808 (2014)
https://doi.org/10.1116/1.4895846
MEMS & NEMS
Feature scale modeling of pulsed plasma-enhanced chemical vapor deposition
J. Vac. Sci. Technol. B 32, 052001 (2014)
https://doi.org/10.1116/1.4891924
Fabrication and characterization of aluminum-molybdenum nanocomposite membranes
J. Vac. Sci. Technol. B 32, 052002 (2014)
https://doi.org/10.1116/1.4893671
Microelectronic & Nanoelectronic Devices
Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing
J. Vac. Sci. Technol. B 32, 052201 (2014)
https://doi.org/10.1116/1.4891168
Field enhancement for fiber emitters in linear and rectangular arrays
J. Vac. Sci. Technol. B 32, 052202 (2014)
https://doi.org/10.1116/1.4891928
Organic Electronics and Optoelectronics
Plasmonics
Spintronics and Magnetic Devices
Influence of oxygen precursors and annealing on Fe3O4 films grown on GaN templates by metal organic chemical vapor deposition
J. Vac. Sci. Technol. B 32, 052801 (2014)
https://doi.org/10.1116/1.4894179
Errata
Erratum: “Semipolar () GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy” [J. Vac. Sci. Technol., B 32, 02C115 (2014)]
Marta Sawicka; Grzegorz Muziol; Henryk Turski; Anna Feduniewicz-Żmuda; Marcin Kryśko; Szymon Grzanka; Ewa Grzanka; Julita Smalc-Koziorowska; Martin Albrecht; Robert Kucharski; Piotr Perlin; Czeslaw Skierbiszewski
J. Vac. Sci. Technol. B 32, 053401 (2014)
https://doi.org/10.1116/1.4892216
Errata: “Role of molybdenum oxide for organic electronics: Surface analytical studies” [J. Vac. Sci. Technol., B 32, 040801 (2014)]
J. Vac. Sci. Technol. B 32, 053402 (2014)
https://doi.org/10.1116/1.4895033
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.