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Issues
May 2012
ISSN 2166-2746
EISSN 2166-2754
Letters
Secondary electron deposition mechanism of carbon contamination
J. Vac. Sci. Technol. B 30, 030601 (2012)
https://doi.org/10.1116/1.3698602
Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon
J. Vac. Sci. Technol. B 30, 030602 (2012)
https://doi.org/10.1116/1.3701711
High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN template layer
Yanli Liu; Dunjun Chen; Junjun Xue; Bin Liu; Hai Lu; Rong Zhang; Youdou Zheng; Ke Xu; Jinping Zhang; Bentao Cui; Andrew M. Wowchak; Amir M. Dabiran
J. Vac. Sci. Technol. B 30, 030603 (2012)
https://doi.org/10.1116/1.4705375
Formation of mesa-type vertically aligned silicon nanowire bundle arrays by selective-area chemical oxidation and etching processes
J. Vac. Sci. Technol. B 30, 030604 (2012)
https://doi.org/10.1116/1.4711000
Novel surface chemical synthesis route for large area graphene-on-insulator films
J. Vac. Sci. Technol. B 30, 030605 (2012)
https://doi.org/10.1116/1.4710997
Tilting angle of nanocolumnar films fabricated by oblique angle deposition
J. Vac. Sci. Technol. B 30, 030606 (2012)
https://doi.org/10.1116/1.4710999
Enhanced light extraction of GaN-based light emitting diodes via simultaneous ITO texturing and n-GaN nanorod formation using Al2O3 powder
J. Vac. Sci. Technol. B 30, 030607 (2012)
https://doi.org/10.1116/1.4709620
Review Article
Graphene functionalization and seeding for dielectric deposition and device integration
J. Vac. Sci. Technol. B 30, 030801 (2012)
https://doi.org/10.1116/1.3693416
Electronic & Optoelectronic Materials, Devices & Processing
Understanding image contrast to optimize procedures for focused ion beam contact level circuit editing
J. Vac. Sci. Technol. B 30, 031201 (2012)
https://doi.org/10.1116/1.3696861
Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation
Chien-Fong Lo; L. Liu; T. S. Kang; Fan Ren; C. Schwarz; E. Flitsiyan; L. Chernyak; Hong-Yeol Kim; Jihyun Kim; Sang Pil Yun; O. Laboutin; Y. Cao; J. W. Johnson; S. J. Pearton
J. Vac. Sci. Technol. B 30, 031202 (2012)
https://doi.org/10.1116/1.3698402
Quantification of cesium surface contamination on silicon resulting from SIMS analysis
J. Vac. Sci. Technol. B 30, 031203 (2012)
https://doi.org/10.1116/1.3698400
Fabrication of nickel diffractive phase elements for x-ray microscopy at 8 keV photon energy
J. Vac. Sci. Technol. B 30, 031205 (2012)
https://doi.org/10.1116/1.3700440
Fabrication and characterization of thin film ZnO Schottky contacts based UV photodetectors: A comparative study
J. Vac. Sci. Technol. B 30, 031206 (2012)
https://doi.org/10.1116/1.3701945
Fabrication and characterization of cesium-based photocathodes for free electron lasers
J. Vac. Sci. Technol. B 30, 031207 (2012)
https://doi.org/10.1116/1.3696731
Low temperature atomic layer deposited Al-doped ZnO thin films and associated semiconducting properties
J. Vac. Sci. Technol. B 30, 031210 (2012)
https://doi.org/10.1116/1.4710519
Performance improvement of GaN-based ultraviolet metal–semiconductor–metal photodetectors using chlorination surface treatment
J. Vac. Sci. Technol. B 30, 031211 (2012)
https://doi.org/10.1116/1.4711215
Remote H2/N2 plasma processes for simultaneous preparation of low-k interlayer dielectric and interconnect copper surfaces
J. Vac. Sci. Technol. B 30, 031212 (2012)
https://doi.org/10.1116/1.4705732
Junction temperature and optoelectronic properties of GaN-based light-emitting diodes with through-hole prepared by laser drill
J. Vac. Sci. Technol. B 30, 031213 (2012)
https://doi.org/10.1116/1.4714521
Energy Conversion and Storage Devices
Enhanced green emission from UV down-converting Ce3+–Tb3+ co-activated ZnAl2O4 phosphor
J. Vac. Sci. Technol. B 30, 031401 (2012)
https://doi.org/10.1116/1.3696720
Lithography
UV capillary force lithography for multiscale structures
J. Vac. Sci. Technol. B 30, 031601 (2012)
https://doi.org/10.1116/1.3696696
Impact of mask absorber thickness on the focus shift effect in extreme ultraviolet lithography
J. Vac. Sci. Technol. B 30, 031602 (2012)
https://doi.org/10.1116/1.3697718
High-resolution nanopatterning by achromatic spatial frequency multiplication with electroplated grating structures
J. Vac. Sci. Technol. B 30, 031603 (2012)
https://doi.org/10.1116/1.3697753
Analytical and experimental evaluation of a counting method for particles added during the mask handling process
J. Vac. Sci. Technol. B 30, 031604 (2012)
https://doi.org/10.1116/1.3696855
Application of double patterning technology to fabricate optical elements: Process simulation, fabrication, and measurement
J. Vac. Sci. Technol. B 30, 031605 (2012)
https://doi.org/10.1116/1.3698315
Nanometer Science & Technology
Stabilization of field electron emission from carbon nanofibers using ballast resistance
J. Vac. Sci. Technol. B 30, 031801 (2012)
https://doi.org/10.1116/1.3700237
Analysis of the efficiency with which geometrically asymmetric metal–vacuum–metal junctions can be used for the rectification of infrared and optical radiations
Alexandre Mayer; Moon S. Chung; Peter B. Lerner; Brock L. Weiss; Nicholas M. Miskovsky; Paul H. Cutler
J. Vac. Sci. Technol. B 30, 031802 (2012)
https://doi.org/10.1116/1.3698600
Large area patterning of single magnetic domains with assistance of ion irradiation in ion milling
J. Vac. Sci. Technol. B 30, 031803 (2012)
https://doi.org/10.1116/1.4706893
Quasistatic and dynamic mechanical properties of Al–Si–Cu structural films in uniaxial tension
J. Vac. Sci. Technol. B 30, 031804 (2012)
https://doi.org/10.1116/1.4711040
Bending and branching of anodic aluminum oxide nanochannels and their applications
J. Vac. Sci. Technol. B 30, 031805 (2012)
https://doi.org/10.1116/1.4711246
Ion induced modification of size-selected MoO3 and WO3 clusters deposited on HOPG
Xiang Li; Kevin A. Wepasnick; Xin Tang; Yi Wang; Kit H. Bowen; D. Howard Fairbrother; Gerd Gantefoer
J. Vac. Sci. Technol. B 30, 031806 (2012)
https://doi.org/10.1116/1.4711134
Real-time measurements of plasma photoresist modifications: The role of plasma vacuum ultraviolet radiation and ions
J. Vac. Sci. Technol. B 30, 031807 (2012)
https://doi.org/10.1116/1.3697752
MEMS & NEMS
Study of solder bridging for the purpose of assembling three-dimensional structures
J. Vac. Sci. Technol. B 30, 032001 (2012)
https://doi.org/10.1116/1.4704638
Spintronics and Magnetic Devices
Structural and magnetic properties of epitaxial In1–xMnxSb semiconductor alloys with x > 0.08
J. Vac. Sci. Technol. B 30, 032801 (2012)
https://doi.org/10.1116/1.3698404
Shop Notes
High-percentage success method for preparing and pre-evaluating tungsten tips for atomic-resolution scanning tunneling microscopy
James K. Schoelz; Peng Xu; Steven D. Barber; Dejun Qi; Matthew L. Ackerman; Gobind Basnet; Cameron T. Cook; Paul M. Thibado
J. Vac. Sci. Technol. B 30, 033201 (2012)
https://doi.org/10.1116/1.3701977
Special Issue: Graphene and Related Materials
Conformally coating vertically aligned carbon nanotube arrays using thermal decomposition of iron pentacarbonyl
J. Vac. Sci. Technol. B 30, 03D101 (2012)
https://doi.org/10.1116/1.3692724
Photoelectron spectroscopy studies of plasma-fluorinated epitaxial graphene
J. Vac. Sci. Technol. B 30, 03D102 (2012)
https://doi.org/10.1116/1.3688760
Effect of functionalization on the electrostatic charging, tunneling, and Raman spectroscopy of epitaxial graphene
Jeongmin Hong; Sandip Niyogi; Elena Bekyarova; Mikhail E. Itkis; Palanisamy Ramesh; Claire Berger; Walt A. deHeer; Robert C. Haddon; Sakhrat Khizroev
J. Vac. Sci. Technol. B 30, 03D103 (2012)
https://doi.org/10.1116/1.3693417
Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane
Wan Sik Hwang; Kristof Tahy; Luke O. Nyakiti; Virginia D. Wheeler; Rachael. L. Myers-Ward; C. R. Eddy, Jr.; D. Kurt Gaskill; Huili (Grace) Xing; Alan Seabaugh; Debdeep Jena
J. Vac. Sci. Technol. B 30, 03D104 (2012)
https://doi.org/10.1116/1.3693593
Complementary voltage inverters with large noise margin based on carbon nanotube field-effect transistors with SiNx top-gate insulators
J. Vac. Sci. Technol. B 30, 03D108 (2012)
https://doi.org/10.1116/1.3697527
Electrical conductivity of copper–graphene composite films synthesized by electrochemical deposition with exfoliated graphene platelets
J. Vac. Sci. Technol. B 30, 03D109 (2012)
https://doi.org/10.1116/1.3701701
Bilayer graphene by bonding CVD graphene to epitaxial graphene
Glenn G. Jernigan; Travis J. Anderson; Jeremy T. Robinson; Joshua D. Caldwell; Jim C. Culbertson; Rachael Myers-Ward; Anthony L. Davidson; Mario G. Ancona; Virginia D. Wheeler; Luke O. Nyakiti; Adam L. Friedman; Paul M. Campbell; D. Kurt Gaskill
J. Vac. Sci. Technol. B 30, 03D110 (2012)
https://doi.org/10.1116/1.3701700
Electric-field-induced band gap of bilayer graphene in ionic liquid
J. Vac. Sci. Technol. B 30, 03D111 (2012)
https://doi.org/10.1116/1.3699011
Synthesis of patterned nanographene on insulators from focused ion beam induced deposition of carbon
J. Vac. Sci. Technol. B 30, 03D113 (2012)
https://doi.org/10.1116/1.4709419
Transfer-free fabrication of graphene transistors
J. Vac. Sci. Technol. B 30, 03D114 (2012)
https://doi.org/10.1116/1.4711128
Temperature dependent spin precession measurements in trilayer graphene utilizing co/graphene contacts
J. Vac. Sci. Technol. B 30, 03D115 (2012)
https://doi.org/10.1116/1.4709768
Experimental and theoretical investigation of graphene layers on SiC(000) in different stacking arrangements
J. Vac. Sci. Technol. B 30, 03D117 (2012)
https://doi.org/10.1116/1.4715549
Graphene metal oxide composite supercapacitor electrodes
J. Vac. Sci. Technol. B 30, 03D118 (2012)
https://doi.org/10.1116/1.4712537
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Science challenges and research opportunities for plasma applications in microelectronics
David B. Graves, Catherine B. Labelle, et al.
Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications
A. S. Stodolna, T. W. Mechielsen, et al.