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Issues
September 1985
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
ISSN 0734-211X
EISSN 2327-9877
Molecular beam epitaxy growth of high performance GaAs power field effect transistors
J. Vac. Sci. Technol. B 3, 1323–1326 (1985)
https://doi.org/10.1116/1.582987
High‐current and thermal‐shock testing of TaSi2–polycide/Al‐alloy composites
J. Vac. Sci. Technol. B 3, 1332–1339 (1985)
https://doi.org/10.1116/1.582989
Preparation of low‐reflectivity Al–Si film using dc magnetron sputtering and its application to multilevel metallization
J. Vac. Sci. Technol. B 3, 1340–1345 (1985)
https://doi.org/10.1116/1.582990
O2 plasma‐converted spin‐on‐glass for planarization
J. Vac. Sci. Technol. B 3, 1352–1356 (1985)
https://doi.org/10.1116/1.582992
Resist patterning and x‐ray mask fabrication employing focused ion beam exposure and subsequent dry etching
J. Vac. Sci. Technol. B 3, 1357–1361 (1985)
https://doi.org/10.1116/1.582993
Near surface damage induced in polyimides by ion beam etching
J. Vac. Sci. Technol. B 3, 1362–1364 (1985)
https://doi.org/10.1116/1.582994
Summary Abstract: Ion‐enhanced processes in etching of silicon
J. Vac. Sci. Technol. B 3, 1373–1375 (1985)
https://doi.org/10.1116/1.582995
Plasma‐assisted etching mechanisms: The implications of reaction probability and halogen coverage
J. Vac. Sci. Technol. B 3, 1376–1383 (1985)
https://doi.org/10.1116/1.582996
Studies on the mechanism of chemical sputtering of silicon by simultaneous exposure to Cl2 and low‐energy Ar+ ions
J. Vac. Sci. Technol. B 3, 1384–1392 (1985)
https://doi.org/10.1116/1.582997
Summary Abstract: Simultaneous exposure of SiO2 and ThF4 to XeF2 and energetic electrons
J. Vac. Sci. Technol. B 3, 1393–1396 (1985)
https://doi.org/10.1116/1.582998
Technique for measuring surface diffusion by laser‐beam‐localized surface photochemistry
J. Vac. Sci. Technol. B 3, 1436–1440 (1985)
https://doi.org/10.1116/1.583005
Laser‐induced selective deposition of micron‐size structures on silicon
J. Vac. Sci. Technol. B 3, 1441–1444 (1985)
https://doi.org/10.1116/1.583006
Photo‐metal organic vapor phase epitaxy: A low temperature method for the growth of CdxHg1−xTe
J. Vac. Sci. Technol. B 3, 1450–1455 (1985)
https://doi.org/10.1116/1.582964
Mechanisms of metallo‐organic vapor phase epitaxy and routes to an ultraviolet‐assisted process
J. Vac. Sci. Technol. B 3, 1456–1459 (1985)
https://doi.org/10.1116/1.582965
Study of symmetry and disordering of Si(111)‐7×7 surfaces by optical second harmonic generation
J. Vac. Sci. Technol. B 3, 1467–1470 (1985)
https://doi.org/10.1116/1.582968
Time‐resolved vibrational energy relaxation of surface adsorbates
J. Vac. Sci. Technol. B 3, 1471–1473 (1985)
https://doi.org/10.1116/1.582969
Angular, velocity, rotational, and electronic distributions of vibrationally elastically scattered NO(v=1) from LiF(100)
J. Vac. Sci. Technol. B 3, 1474–1478 (1985)
https://doi.org/10.1116/1.582970
Laser investigation of the dynamics of molecule–surface interaction: Rotational and translational energy of scattered molecules
J. Vac. Sci. Technol. B 3, 1490–1497 (1985)
https://doi.org/10.1116/1.582973
Above‐bandgap optical anisotropies in cubic semiconductors: A visible–near ultraviolet probe of surfaces
J. Vac. Sci. Technol. B 3, 1498–1506 (1985)
https://doi.org/10.1116/1.582974
Mechanistic studies of the decomposition of trimethylaluminum on heated surfaces
J. Vac. Sci. Technol. B 3, 1513–1519 (1985)
https://doi.org/10.1116/1.582976
Quantum model of dephasing‐enhanced laser desorption: Master equation approach
J. Vac. Sci. Technol. B 3, 1525–1528 (1985)
https://doi.org/10.1116/1.582978
Laser‐stimulated vibrational excitation of an adspecies studied by a generalized master equation: Neutral atomic hydrogen on hydrated KCl(001)
J. Vac. Sci. Technol. B 3, 1529–1533 (1985)
https://doi.org/10.1116/1.582979
Photochemical deposition of Sn for use in molecular beam epitaxy of GaAs
J. Vac. Sci. Technol. B 3, 1534–1538 (1985)
https://doi.org/10.1116/1.582980
Large modification of the surface‐enhanced Raman scattering of pyridine on Ag surfaces by Pd submonolayers
J. Vac. Sci. Technol. B 3, 1539–1542 (1985)
https://doi.org/10.1116/1.582981
Doppler shift laser fluorescence spectroscopy of sputtered and evaporated atoms under Ar+ bombardment
J. Vac. Sci. Technol. B 3, 1543–1545 (1985)
https://doi.org/10.1116/1.582982
The application of Doppler shift laser fluorescence spectroscopy for the detection and energy analysis of particles evolving from surfaces
J. Vac. Sci. Technol. B 3, 1546–1559 (1985)
https://doi.org/10.1116/1.582983
Laser‐driven metal cluster segregation in oxide matrices
J. Vac. Sci. Technol. B 3, 1560–1562 (1985)
https://doi.org/10.1116/1.582984
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Suppressing oxygen vacancy formation in ZrO2 to improve electrical properties by employing MoO2 bottom electrode
Jaehyeon Yun, Seungyeon Kim, et al.