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Issues
July 1985
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
ISSN 0734-211X
EISSN 2327-9877
Binding energies of hydrogenic‐impurity states in triangular quantum wells
J. Vac. Sci. Technol. B 3, 939–942 (1985)
https://doi.org/10.1116/1.583017
Deep level characterization of AlGaAs and selectively doped N‐AlGaAs/GaAs heterojunctions
J. Vac. Sci. Technol. B 3, 943–946 (1985)
https://doi.org/10.1116/1.583018
Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1−xInxAs/GaAs on GaAs quantum wells
J. Vac. Sci. Technol. B 3, 947–949 (1985)
https://doi.org/10.1116/1.583019
Investigation of surface roughness of molecular beam epitaxy Ga1−xAlxAs layers and its consequences on GaAs/Ga1−xAlxAs heterostructures
J. Vac. Sci. Technol. B 3, 950–955 (1985)
https://doi.org/10.1116/1.583020
An approach to fabricating sub‐half‐micrometer‐length gates for GaAs metal‐semiconductor field‐effect transistors
J. Vac. Sci. Technol. B 3, 956–958 (1985)
https://doi.org/10.1116/1.583021
Quantitative Auger analysis by depth profiling of line shapes: Application to native oxide‐InSb interfaces
J. Vac. Sci. Technol. B 3, 959–963 (1985)
https://doi.org/10.1116/1.583022
Automated growth of AlxGa1−xAs and InxGa1−xAs by molecular beam epitaxy using an ion gauge flux monitor
J. Vac. Sci. Technol. B 3, 964–967 (1985)
https://doi.org/10.1116/1.583023
Laser‐induced plasmas for primary ion deposition of epitaxial Ge and Si films
J. Vac. Sci. Technol. B 3, 968–974 (1985)
https://doi.org/10.1116/1.583024
Production silicon molecular beam epitaxy apparatus for 4‐in.‐diam wafers
J. Vac. Sci. Technol. B 3, 975–980 (1985)
https://doi.org/10.1116/1.583025
The influence of oxidation and annealing on InP native chemical oxides
J. Vac. Sci. Technol. B 3, 981–984 (1985)
https://doi.org/10.1116/1.583026
Kinetics of Si(100) nitridation first stages by ammonia: Electron‐ beam‐induced thin film growth at room temperature
J. Vac. Sci. Technol. B 3, 985–991 (1985)
https://doi.org/10.1116/1.583027
Use of TiSi2 to form metal–oxide–silicon field effect transistors with self‐aligned source/drain and gate electrode
J. Vac. Sci. Technol. B 3, 992–996 (1985)
https://doi.org/10.1116/1.583028
Titanium silicide films prepared by reactive sputtering
J. Vac. Sci. Technol. B 3, 997–1003 (1985)
https://doi.org/10.1116/1.583029
Characterization of diazo‐type photoresists using e‐beam exposure and metal–ion‐free developers
J. Vac. Sci. Technol. B 3, 1004–1008 (1985)
https://doi.org/10.1116/1.583087
Radio‐frequency biased microwave plasma etching technique: A method to increase SiO2 etch rate
J. Vac. Sci. Technol. B 3, 1025–1034 (1985)
https://doi.org/10.1116/1.583090
Superlattice image of cleaved GaAs/Al0.39Ga0.61As by reflection electron microscopy
J. Vac. Sci. Technol. B 3, 1035–1036 (1985)
https://doi.org/10.1116/1.583091
Detection of pinholes in the insulator deposited on aluminum metallization
J. Vac. Sci. Technol. B 3, 1037–1038 (1985)
https://doi.org/10.1116/1.583092
Erratum: High speed precision X‐Y stage [J. Vac. Sci. Technol. B 3, 112 (1985)]
J. Vac. Sci. Technol. B 3, 1039 (1985)
https://doi.org/10.1116/1.583093
Microscopic description of confinement in quantum well and sawtooth semiconductor superlattices
J. Vac. Sci. Technol. B 3, 1051–1054 (1985)
https://doi.org/10.1116/1.583094
Theoretical investigation of the effect of strain on phase separation in epitaxial layers
J. Vac. Sci. Technol. B 3, 1055–1060 (1985)
https://doi.org/10.1116/1.583095
Determination of microscopic structural quality of molecular beam epitaxial grown GaAs/AlGaAs interface by high‐resolution photoluminescence spectroscopy
Jasprit Singh; K. K. Bajaj; D. C. Reynolds; C. W. Litton; P. W. Yu; W. T. Masselink; R. Fischer; H. Morkoç
J. Vac. Sci. Technol. B 3, 1061–1064 (1985)
https://doi.org/10.1116/1.583216
Summary Abstract: The influence of surface reconstruction on the initial stages of silicon molecular beam epitaxy
J. Vac. Sci. Technol. B 3, 1065–1066 (1985)
https://doi.org/10.1116/1.583215
Summary Abstract: Experimental study of interfacial Na+ ‘‘impurities’’ in Si metal–oxide‐semiconductor structures
J. Vac. Sci. Technol. B 3, 1074–1075 (1985)
https://doi.org/10.1116/1.583053
Vacancy buckling model for the (111) surface of III–V compound semiconductors
J. Vac. Sci. Technol. B 3, 1076–1078 (1985)
https://doi.org/10.1116/1.583054
Summary Abstract: O‐1s core level studies of the oxidation of GaAs(110)
J. Vac. Sci. Technol. B 3, 1079–1080 (1985)
https://doi.org/10.1116/1.583055
A combined high‐resolution electron microscopy, x‐ray photoemission spectroscopy, and electrical properties study of the InP–SiO2 interface
J. Vac. Sci. Technol. B 3, 1081–1086 (1985)
https://doi.org/10.1116/1.583056
Low energy electron diffraction study of (221) and (311) GaAs surfaces
J. Vac. Sci. Technol. B 3, 1089–1092 (1985)
https://doi.org/10.1116/1.583058
Summary Abstract: Passivation of the GaAs surface by an amorphous phosphorus overlayer
J. Vac. Sci. Technol. B 3, 1097–1098 (1985)
https://doi.org/10.1116/1.583060
Electron energy loss spectroscopy from GaAs(110) interfaces
J. Vac. Sci. Technol. B 3, 1099–1102 (1985)
https://doi.org/10.1116/1.583061
Summary Abstract: Layer‐by‐layer evaporation of GaAs (001)
J. Vac. Sci. Technol. B 3, 1116–1117 (1985)
https://doi.org/10.1116/1.583064
Vibrational study of the SiO2/Si interface by high resolution electron energy loss spectroscopy
J. Vac. Sci. Technol. B 3, 1118–1121 (1985)
https://doi.org/10.1116/1.583065
Near neighbor chemical bonding effects on Si atom native bonding defects in silicon nitride and silicon dioxide insulators
J. Vac. Sci. Technol. B 3, 1122–1128 (1985)
https://doi.org/10.1116/1.583066
Raman spectroscopy of surface layers on crystalline silicon
J. Vac. Sci. Technol. B 3, 1129–1135 (1985)
https://doi.org/10.1116/1.583067
Summary Abstract: Surface morphology of oxidized and ion‐etched silicon by scanning tunneling microscopy
J. Vac. Sci. Technol. B 3, 1136–1137 (1985)
https://doi.org/10.1116/1.583068
Above‐bandgap optical anisotropies in the reflectance spectra of some cubic semiconductors
J. Vac. Sci. Technol. B 3, 1138–1141 (1985)
https://doi.org/10.1116/1.583069
Thickness dependence of the reactions at the interface of Pd and Si〈111〉
J. Vac. Sci. Technol. B 3, 1142–1145 (1985)
https://doi.org/10.1116/1.583070
Photoresponse of GaAs/AlAs heterostructures under external bias
J. Vac. Sci. Technol. B 3, 1146–1148 (1985)
https://doi.org/10.1116/1.583071
Summary Abstract: Resonant tunneling of holes in quantum well heterostructures
J. Vac. Sci. Technol. B 3, 1149–1150 (1985)
https://doi.org/10.1116/1.583072
Summary Abstract: Interface state measurement of epitaxial and nonepitaxial nickel silicide Schottky barriers
J. Vac. Sci. Technol. B 3, 1151–1152 (1985)
https://doi.org/10.1116/1.583073
Determination of space charge layer parameters on InSb(110) by electron energy loss spectroscopy
J. Vac. Sci. Technol. B 3, 1153–1156 (1985)
https://doi.org/10.1116/1.583030
Recent models of Schottky barrier formation
J. Vac. Sci. Technol. B 3, 1157–1161 (1985)
https://doi.org/10.1116/1.583031
Dangling bonds and Schottky barriers
J. Vac. Sci. Technol. B 3, 1162–1166 (1985)
https://doi.org/10.1116/1.583032
Atomic and electronic structures of (111), (211), and (311) surfaces of GaAs
J. Vac. Sci. Technol. B 3, 1167–1169 (1985)
https://doi.org/10.1116/1.583033
Experimental results examining various models of Schottky barrier formation on GaAs
J. Vac. Sci. Technol. B 3, 1178–1183 (1985)
https://doi.org/10.1116/1.583035
Formation of metal–semiconductor interfaces: From the submonolayer regime to the real Schottky barrier
J. Vac. Sci. Technol. B 3, 1184–1189 (1985)
https://doi.org/10.1116/1.583036
Summary Abstract: Influence of interface quality on the Schottky barrier height in the epitaxial Ni‐silicide/Si(111) system
J. Vac. Sci. Technol. B 3, 1190–1191 (1985)
https://doi.org/10.1116/1.583037
Ohmic contacts to n‐type GaAs
J. Vac. Sci. Technol. B 3, 1192–1196 (1985)
https://doi.org/10.1116/1.583038
Influence of S and Se on the Schottky‐barrier height and interface chemistry of Au contacts to GaAs
J. Vac. Sci. Technol. B 3, 1197–1201 (1985)
https://doi.org/10.1116/1.583039
Cr on GaAs (110): The effect of electronegativity on the Schottky barrier height
J. Vac. Sci. Technol. B 3, 1202–1205 (1985)
https://doi.org/10.1116/1.583040
Schottky barriers on atomically clean n‐InP (110)
J. Vac. Sci. Technol. B 3, 1206–1211 (1985)
https://doi.org/10.1116/1.583041
The interface between (100) InP and epitaxially grown Al
J. Vac. Sci. Technol. B 3, 1212–1216 (1985)
https://doi.org/10.1116/1.583042
AuGa2 on GaSb(001): An epitaxial, thermodynamically stabilized metal/III–V compound semiconductor interface
J. Vac. Sci. Technol. B 3, 1217–1220 (1985)
https://doi.org/10.1116/1.583043
Theory of Si/NiSi2 interface states
J. Vac. Sci. Technol. B 3, 1221–1223 (1985)
https://doi.org/10.1116/1.583044
Theory of band line‐ups
J. Vac. Sci. Technol. B 3, 1231–1238 (1985)
https://doi.org/10.1116/1.583046
Tunable barrier heights and band discontinuities via doping interface dipoles: An interface engineering technique and its device applications
J. Vac. Sci. Technol. B 3, 1245–1251 (1985)
https://doi.org/10.1116/1.583049
Heterojunction band discontinuity at the Si–Ge(111) interface
J. Vac. Sci. Technol. B 3, 1252–1255 (1985)
https://doi.org/10.1116/1.583050
n+ InGaAs/nGaAs heterojunction Schottky diodes with low barriers controlled by band offset and doping level
J. Vac. Sci. Technol. B 3, 1274–1279 (1985)
https://doi.org/10.1116/1.583011
Valence band offset in AlAs/GaAs heterojunctions and the empirical relation for band alignment
J. Vac. Sci. Technol. B 3, 1280–1284 (1985)
https://doi.org/10.1116/1.583012
Absorption spectra of modulation‐doped semiconductor quantum wells
J. Vac. Sci. Technol. B 3, 1285–1289 (1985)
https://doi.org/10.1116/1.583013
A parametric study of interband absorption in GaAs–AlxGa1−xAs quantum wells
J. Vac. Sci. Technol. B 3, 1290–1294 (1985)
https://doi.org/10.1116/1.583014
Excitonic recombination at the CdTe/(Cd,Mn)Te heterointerface
J. Vac. Sci. Technol. B 3, 1300–1302 (1985)
https://doi.org/10.1116/1.583016
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry
Shiva Mudide, Nick Keller, et al.