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Issues
November 2010
ISSN 2166-2746
EISSN 2166-2754
In this Issue
Regular Articles
Different growth mechanisms of vertical carbon nanotubes by rf- or dc-plasma enhanced chemical vapor deposition at low temperature
J. Vac. Sci. Technol. B 28, 1081–1085 (2010)
https://doi.org/10.1116/1.3497030
Influence of the tip work function on scanning tunneling microscopy and spectroscopy on zinc doped GaAs
J. Vac. Sci. Technol. B 28, 1086–1092 (2010)
https://doi.org/10.1116/1.3498739
Field-emission of thin film deposited by an in situ chloride-generated route
J. Vac. Sci. Technol. B 28, 1093–1096 (2010)
https://doi.org/10.1116/1.3498742
Characterization of electrodeposited Ni–Fe–SiC alloys for microelectromechanical applications
J. Vac. Sci. Technol. B 28, 1097–1099 (2010)
https://doi.org/10.1116/1.3498740
UV ozone passivation of the metal/dielectric interface for -based organic thin film transistors
J. Vac. Sci. Technol. B 28, 1100–1103 (2010)
https://doi.org/10.1116/1.3498744
Surface and near-surface modifications of ultralow dielectric constant materials exposed to plasmas under sidewall-like conditions
J. Vac. Sci. Technol. B 28, 1104–1110 (2010)
https://doi.org/10.1116/1.3499271
Growth of size and density controlled nanowires on anodic alumina membrane-assisted etching of nanopatterned GaAs
J. Vac. Sci. Technol. B 28, 1111–1119 (2010)
https://doi.org/10.1116/1.3498753
Complex dielectric function and refractive index spectra of epitaxial CdO thin film grown on -plane sapphire from 0.74 to 6.45 eV
J. Vac. Sci. Technol. B 28, 1120–1124 (2010)
https://doi.org/10.1116/1.3498755
Formation of three-dimensional and nanowall structures on silicon using a hydrogen-assisted high aspect ratio etching
J. Vac. Sci. Technol. B 28, 1125–1131 (2010)
https://doi.org/10.1116/1.3497033
Statistical-noise effect on discrete power spectrum of line-edge and line-width roughness
J. Vac. Sci. Technol. B 28, 1132–1137 (2010)
https://doi.org/10.1116/1.3499647
Defect-free etching process for GaAs/AlGaAs hetero-nanostructure using chlorine/argon mixed neutral beam
J. Vac. Sci. Technol. B 28, 1138–1142 (2010)
https://doi.org/10.1116/1.3499716
Effect of Al doping on resistive switching behavior of films for nonvolatile memory application
J. Vac. Sci. Technol. B 28, 1143–1147 (2010)
https://doi.org/10.1116/1.3501109
Mechanical and electronic characteristics of scanning probe microscopy probes based on coaxial palladium nanowire/carbon nanotube hybrid structures
J. Vac. Sci. Technol. B 28, 1148–1152 (2010)
https://doi.org/10.1116/1.3501131
laser treatment for stabilization of the superhydrophobicity of carbon nanotube surfaces
J. Vac. Sci. Technol. B 28, 1153–1157 (2010)
https://doi.org/10.1116/1.3502024
Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates
J. Vac. Sci. Technol. B 28, 1158–1163 (2010)
https://doi.org/10.1116/1.3499648
Influence of surface treatment and interface layers on electrical spin injection efficiency and transport in InAs
J. Vac. Sci. Technol. B 28, 1164–1168 (2010)
https://doi.org/10.1116/1.3502674
Electron detection performance of diamond avalanche diode
J. Vac. Sci. Technol. B 28, 1169–1172 (2010)
https://doi.org/10.1116/1.3497031
Thin film transistors with a ZnO channel and gate dielectric layers of by atomic layer deposition
J. Vac. Sci. Technol. B 28, 1173–1178 (2010)
https://doi.org/10.1116/1.3501338
Silicon nitride hardmask fabrication using a cyclic -based reactive ion etching process for vertical profile nanostructures
J. Vac. Sci. Technol. B 28, 1179–1186 (2010)
https://doi.org/10.1116/1.3501120
Hydrogen etching and cutting of multiwall carbon nanotubes
J. Vac. Sci. Technol. B 28, 1187–1194 (2010)
https://doi.org/10.1116/1.3498737
Controlled sacrificial sidewall surface micromachining for the release of high length-to-thickness aspect ratio bridges
J. Vac. Sci. Technol. B 28, 1195–1201 (2010)
https://doi.org/10.1116/1.3503612
Field emission stability and properties of simultaneously grown microcrystalline diamond and carbon nanostructure films
J. Vac. Sci. Technol. B 28, 1202–1205 (2010)
https://doi.org/10.1116/1.3503619
Simultaneous observation of surface topography and elasticity at atomic scale by multifrequency frequency modulation atomic force microscopy
J. Vac. Sci. Technol. B 28, 1210–1214 (2010)
https://doi.org/10.1116/1.3503611
Challenges in the fabrication of an optical frequency ground plane cloak consisting of silicon nanorod arrays
J. Vac. Sci. Technol. B 28, 1222–1230 (2010)
https://doi.org/10.1116/1.3504595
Ni full-filling into film with etched tunnels using a polyethylene glycol solution bath in electroless-plating
Joo-Hee Jang; Chang-Hyoung Lee; Woo-Sung Choi; Nam-Jeong Kim; Taek-You Kim; Tae-Yoo Kim; Jang-Hyun Kim; Chan Park; Su-Jeong Suh
J. Vac. Sci. Technol. B 28, 1231–1234 (2010)
https://doi.org/10.1116/1.3506105
Antimonide-based depletion-mode metal-oxide-semiconductor field-effect transistors using small-bandgap InAs channel layers
J. Vac. Sci. Technol. B 28, 1235–1238 (2010)
https://doi.org/10.1116/1.3506111
Impact of exposure doses on demolding process in UV nanoimprint lithography
J. Vac. Sci. Technol. B 28, 1239–1241 (2010)
https://doi.org/10.1116/1.3501126
Statistical-noise effect on autocorrelation function of line-edge and line-width roughness
J. Vac. Sci. Technol. B 28, 1242–1250 (2010)
https://doi.org/10.1116/1.3514206
Thin polymer films viscosity measurements from nanopatterning method
J. Vac. Sci. Technol. B 28, 1251–1258 (2010)
https://doi.org/10.1116/1.3504591
Effect of resist on the transfer of line-edge roughness spatial metrics from mask to wafer
J. Vac. Sci. Technol. B 28, 1259–1266 (2010)
https://doi.org/10.1116/1.3509437
Performance and reliability analysis of -type metal-oxide-semiconductor field effect transistors with various combinations of Ru and Al gate metal
Hong Bae Park; Chang Seo Park; Chang Yong Kang; Seung-Chul Song; Byoung Hun Lee; Tea Wan Kim; Tae-Young Jang; Dong-Hyoub Kim; Jae Kyeong Jeong; Rino Choi
J. Vac. Sci. Technol. B 28, 1267–1270 (2010)
https://doi.org/10.1116/1.3514103
Structural and optical properties of self-assembled InAs quantum dot molecules on GaAs substrates
J. Vac. Sci. Technol. B 28, 1271–1273 (2010)
https://doi.org/10.1116/1.3516010
Fabrication and field emission of carbon composite nanostructures
J. Vac. Sci. Technol. B 28, 1274–1278 (2010)
https://doi.org/10.1116/1.3516017
Atomic resolution force microscopy imaging on a strongly ionic surface with differently functionalized tips
J. Vac. Sci. Technol. B 28, 1279–1283 (2010)
https://doi.org/10.1116/1.3511505
Electron field emission from well-aligned GaP nanotips
J. Vac. Sci. Technol. B 28, 1284–1286 (2010)
https://doi.org/10.1116/1.3506089
Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
M. J. P. Hopstaken; M. S. Gordon; D. Pfeiffer; D. K. Sadana; T. Topuria; P. M. Rice; C. Gerl; M. Richter; C. Marchiori
J. Vac. Sci. Technol. B 28, 1287–1297 (2010)
https://doi.org/10.1116/1.3514117
Relaxation of misfit strain in silicon-germanium () films during dry oxidation
J. Vac. Sci. Technol. B 28, 1298–1303 (2010)
https://doi.org/10.1116/1.3516014
Quantifying reaction spread and x-ray exposure sensitivity in hydrogen silsesquioxane latent resist patterns with x-ray spectromicroscopy
Allison G. Caster; Stefan Kowarik; Adam M. Schwartzberg; Stephen R. Leone; Alexei Tivanski; Mary K. Gilles
J. Vac. Sci. Technol. B 28, 1304–1313 (2010)
https://doi.org/10.1116/1.3514124
Single-walled carbon nanotube alignment by grating-guided electrostatic self-assembly
J. Vac. Sci. Technol. B 28, 1318–1321 (2010)
https://doi.org/10.1116/1.3514205
Brief Reports and Comments
Moisture effect on electromigration characteristics for copper dual damascene interconnection
J. Vac. Sci. Technol. B 28, 1322–1325 (2010)
https://doi.org/10.1116/1.3501127
Shop Notes
Simple derivation of the formula for Sommerfeld supply density used in electron-emission physics and limitations on its use
J. Vac. Sci. Technol. B 28, 1326–1329 (2010)
https://doi.org/10.1116/1.3501118
PAPERS FROM THE 54th INTERNATIONAL CONFERENCE ON ELECTRON, ION, AND PHOTON BEAM TECHNOLOGY AND NANOFABRICATION
Plenary
Directed Assembly
Argon ion multibeam nanopatterning of Ni–Cu inserts for injection molding
Anton Koeck; Roman Bruck; Markus Wellenzohn; Rainer Hainberger; Elmar Platzgummer; Hans Loeschner; Peter Joechl; Stefan Eder-Kapl; Christoph Ebm; Peter Czepl; Kurt Kaiblinger; Friedrich Pipelka; Florian Letzkus; Mathias Irmscher; Bernd Heitkamp
J. Vac. Sci. Technol. B 28, C6B1–C6B6 (2010)
https://doi.org/10.1116/1.3517643
Mechanism and dynamics of block copolymer directed assembly with density multiplication on chemically patterned surfaces
Guoliang Liu; Sean P. Delcambre; Karl O. Stuen; Gordon S. W. Craig; Juan J. de Pablo; Paul F. Nealey; Kim Nygård; Dillip K. Satapathy; Oliver Bunk; Harun H. Solak
J. Vac. Sci. Technol. B 28, C6B13–C6B19 (2010)
https://doi.org/10.1116/1.3518918
Nanostructure fabrication by self-assembly of block copolymers on three-dimensional diamondlike carbon structures
J. Vac. Sci. Technol. B 28, C6B20–C6B23 (2010)
https://doi.org/10.1116/1.3518462
Shape control and density multiplication of cylinder-forming ternary block copolymer-homopolymer blend thin films on chemical patterns
Huiman Kang; Francois Detcheverry; Karl O. Stuen; Gordon S. W. Craig; Juan J. de Pablo; Padma Gopalan; Paul F. Nealey
J. Vac. Sci. Technol. B 28, C6B24–C6B29 (2010)
https://doi.org/10.1116/1.3518910
Integration of block copolymer directed assembly with 193 immersion lithography
Chi-Chun Liu; Paul F. Nealey; Alex K. Raub; Philip J. Hakeem; Steve R. J. Brueck; Eungnak Han; Padma Gopalan
J. Vac. Sci. Technol. B 28, C6B30–C6B34 (2010)
https://doi.org/10.1116/1.3501348
Directed assembly of solution processed single-walled carbon nanotubes via dielectrophoresis: From aligned array to individual nanotube devices
J. Vac. Sci. Technol. B 28, C6B7–C6B12 (2010)
https://doi.org/10.1116/1.3501347
Electron Beams
High-current electron optical design for reflective electron beam lithography direct write lithography
J. Vac. Sci. Technol. B 28, C6C1–C6C5 (2010)
https://doi.org/10.1116/1.3505130
5 kV multielectron beam lithography: MAPPER tool and resist process characterization
J. Vac. Sci. Technol. B 28, C6C14–C6C20 (2010)
https://doi.org/10.1116/1.3517664
Excitation and imaging of resonant optical modes of Au triangular nanoantennas using cathodoluminescence spectroscopy
J. Vac. Sci. Technol. B 28, C6C21–C6C25 (2010)
https://doi.org/10.1116/1.3504566
Field induced shape and work function modification for the ZrO/W(100) Schottky cathode
J. Vac. Sci. Technol. B 28, C6C26–C6C33 (2010)
https://doi.org/10.1116/1.3501362
Performance characterization of negative resists for sub-10-nm electron beam lithography
J. Vac. Sci. Technol. B 28, C6C34–C6C40 (2010)
https://doi.org/10.1116/1.3517721
Simulation of scanning electron microscope images taking into account local and global electromagnetic fields
J. Vac. Sci. Technol. B 28, C6C41–C6C47 (2010)
https://doi.org/10.1116/1.3518917
Simulation of electron beam lithography of nanostructures
J. Vac. Sci. Technol. B 28, C6C48–C6C57 (2010)
https://doi.org/10.1116/1.3497019
Sub-10-nm half-pitch electron-beam lithography by using poly(methyl methacrylate) as a negative resist
J. Vac. Sci. Technol. B 28, C6C58–C6C62 (2010)
https://doi.org/10.1116/1.3501353
Reflective electron beam lithography: A maskless ebeam direct write lithography approach using the reflective electron beam lithography concept
Paul Petric; Chris Bevis; Mark McCord; Allen Carroll; Alan Brodie; Upendra Ummethala; Luca Grella; Anthony Cheung; Regina Freed
J. Vac. Sci. Technol. B 28, C6C6–C6C13 (2010)
https://doi.org/10.1116/1.3511436
Analysis of surface electromagnetic wave resonant structures for potential application in an array of compact photoelectron sources
J. Vac. Sci. Technol. B 28, C6C63–C6C68 (2010)
https://doi.org/10.1116/1.3504590
Inspection of open defects in a thin film transistor-liquid crystal display panel by using a low-energy electron microcolumn
J. Vac. Sci. Technol. B 28, C6C69–C6C73 (2010)
https://doi.org/10.1116/1.3502658
Brightness limitations of cold field emitters caused by Coulomb interactions
J. Vac. Sci. Technol. B 28, C6C74–C6C79 (2010)
https://doi.org/10.1116/1.3502642
Emerging Technologies
Direct transformation of a resist pattern into a graphene field effect transistor through interfacial graphitization of liquid gallium
J. Vac. Sci. Technol. B 28, C6D1–C6D4 (2010)
https://doi.org/10.1116/1.3511511
Study of transport properties in graphene monolayer flakes on substrates
J. Vac. Sci. Technol. B 28, C6D11–C6D14 (2010)
https://doi.org/10.1116/1.3516649
Fabrication of metal patterns on freestanding graphenoid nanomembranes
J. Vac. Sci. Technol. B 28, C6D5–C6D10 (2010)
https://doi.org/10.1116/1.3511475
Extreme Ultraviolet Lithography
Wavelength-specific reflections: A decade of extreme ultraviolet actinic mask inspection research
J. Vac. Sci. Technol. B 28, C6E1–C6E10 (2010)
https://doi.org/10.1116/1.3498757
Actinic imaging and evaluation of phase structures on extreme ultraviolet lithography masks
J. Vac. Sci. Technol. B 28, C6E11–C6E16 (2010)
https://doi.org/10.1116/1.3498756
Assessing the mask clamping ability of a low thermal expansion material chuck
J. Vac. Sci. Technol. B 28, C6E17–C6E22 (2010)
https://doi.org/10.1116/1.3502449
Extreme ultraviolet mask substrate surface roughness effects on lithographic patterning
Simi A. George; Patrick P. Naulleau; Iacopo Mochi; Farhad Salmassi; Eric M. Gullikson; Kenneth A. Goldberg; Erik H. Anderson
J. Vac. Sci. Technol. B 28, C6E23–C6E30 (2010)
https://doi.org/10.1116/1.3502436
Extreme ultraviolet mask surface cleaning effects on lithography process performance
J. Vac. Sci. Technol. B 28, C6E31–C6E35 (2010)
https://doi.org/10.1116/1.3501344
High transmission pellicles for extreme ultraviolet lithography reticle protection
J. Vac. Sci. Technol. B 28, C6E36–C6E41 (2010)
https://doi.org/10.1116/1.3505126
Focused Ion Beams
Design of a parallel mass spectrometer for focused ion beam columns
J. Vac. Sci. Technol. B 28, C6F10–C6F14 (2010)
https://doi.org/10.1116/1.3497021
Gas field ion source and liquid metal ion source charged particle material interaction study for semiconductor nanomachining applications
J. Vac. Sci. Technol. B 28, C6F15–C6F21 (2010)
https://doi.org/10.1116/1.3511509
Model for nanopillar growth by focused helium ion-beam-induced deposition
J. Vac. Sci. Technol. B 28, C6F22–C6F25 (2010)
https://doi.org/10.1116/1.3517536
beam lithography for suspended lateral beams and nanowires
J. Vac. Sci. Technol. B 28, C6F26–C6F30 (2010)
https://doi.org/10.1116/1.3497013
Transmission electron microscopy study of damage layer formed through ion beam induced deposition of platinum on silicon substrate
J. Vac. Sci. Technol. B 28, C6F31–C6F37 (2010)
https://doi.org/10.1116/1.3516651
Piezoresistive effect in the three-dimensional diamondlike carbon nanostructure fabricated by focused-ion-beam chemical vapor deposition
J. Vac. Sci. Technol. B 28, C6F38–C6F41 (2010)
https://doi.org/10.1116/1.3504584
Analysis of subsurface beam spread and its impact on the image resolution of the helium ion microscope
J. Vac. Sci. Technol. B 28, C6F6–C6F9 (2010)
https://doi.org/10.1116/1.3497012
Masks and Maskless Lithography
Blanking characteristics of a miniature electron beam column
J. Vac. Sci. Technol. B 28, C6G1–C6G4 (2010)
https://doi.org/10.1116/1.3502437
Multibeam scanning electron microscope: Experimental results
J. Vac. Sci. Technol. B 28, C6G5–C6G10 (2010)
https://doi.org/10.1116/1.3498749
Metrology and Imaging
Application of analytic scanning electron microscopy to critical dimensions metrology at nanometer scale
J. Vac. Sci. Technol. B 28, C6H1–C6H5 (2010)
https://doi.org/10.1116/1.3504476
Metrology for electron-beam lithography and resist contrast at the sub-10 nm scale
J. Vac. Sci. Technol. B 28, C6H11–C6H17 (2010)
https://doi.org/10.1116/1.3501359
Robust estimation of line width roughness parameters
J. Vac. Sci. Technol. B 28, C6H18–C6H33 (2010)
https://doi.org/10.1116/1.3517718
Microfluidics
Three-dimensional microfluidic mixers using ion beam lithography and micromachining
J. Vac. Sci. Technol. B 28, C6I1–C6I6 (2010)
https://doi.org/10.1116/1.3505128
Nanofluidic channels fabricated by e-beam lithography and polymer reflow sealing
J. Vac. Sci. Technol. B 28, C6I11–C6I13 (2010)
https://doi.org/10.1116/1.3517620
Rotation speed control of Janus particles by dielectrophoresis in a microfluidic channel
J. Vac. Sci. Technol. B 28, C6I14–C6I19 (2010)
https://doi.org/10.1116/1.3502670
Fabricating millimeter to nanometer sized cavities concurrently for nanofluidic devices
J. Vac. Sci. Technol. B 28, C6I7–C6I10 (2010)
https://doi.org/10.1116/1.3517701
Modeling
Mask-topography-induced phase effects and wave aberrations in optical and extreme ultraviolet lithography
J. Vac. Sci. Technol. B 28, C6J1–C6J7 (2010)
https://doi.org/10.1116/1.3497024
Monte Carlo modeling of electron backscattering from carbon nanotube forests
J. Vac. Sci. Technol. B 28, C6J13–C6J18 (2010)
https://doi.org/10.1116/1.3511506
Reducing the pattern redundancy in optical proximity correction modeling by analyzing the pattern linearity
J. Vac. Sci. Technol. B 28, C6J19–C6J24 (2010)
https://doi.org/10.1116/1.3511510
High accuracy electron beam model development in MICHELLE: eBEAM
Serguei G. Ovtchinnikov; Simon J. Cooke; Roman Shtokhamer; Alexander N. Vlasov; Masis M. Mkrtchyan; Christopher Kostas; John J. Petillo; Baruch Levush
J. Vac. Sci. Technol. B 28, C6J8–C6J12 (2010)
https://doi.org/10.1116/1.3503899
Nanobiology
Fabrication of three-dimensional structures for the assessment of cell mechanical interactions within cell monolayers
J. Vac. Sci. Technol. B 28, C6K1–C6K7 (2010)
https://doi.org/10.1116/1.3511435
Gelatin/glycerol coating to preserve mechanically compliant nanowire electrodes from damage during brain implantation
Jolanda A. Witteveen; Dmitry B. Suyatin; Lina Gällentoft; Jens Schouenborg; Nils Danielsen; Christelle N. Prinz
J. Vac. Sci. Technol. B 28, C6K13–C6K16 (2010)
https://doi.org/10.1116/1.3498764
Microfluidics-assisted photo nanoimprint lithography for the formation of cellular bioimprints
J. Vac. Sci. Technol. B 28, C6K17–C6K22 (2010)
https://doi.org/10.1116/1.3501342
Texturing of silicon using a microporous polymer etch mask
J. Vac. Sci. Technol. B 28, C6K8–C6K12 (2010)
https://doi.org/10.1116/1.3507890
Nanoelectronics
Platinum single-electron transistors with tunnel barriers made by atomic layer deposition
J. Vac. Sci. Technol. B 28, C6L6–C6L8 (2010)
https://doi.org/10.1116/1.3511432
Si single electron transistor fabricated by chemical mechanical polishing
J. Vac. Sci. Technol. B 28, C6L9–C6L13 (2010)
https://doi.org/10.1116/1.3498748
Nanoimprint
Aspects of hybrid pattern definition while combining thermal nanoimprint with optical lithography
J. Vac. Sci. Technol. B 28, C6M1–C6M6 (2010)
https://doi.org/10.1116/1.3498750
Nanoimprinted solar cells optimized by oblique deposition of
J. Vac. Sci. Technol. B 28, C6M104–C6M107 (2010)
https://doi.org/10.1116/1.3517513
Process-simulation system for UV-nanoimprint lithography
J. Vac. Sci. Technol. B 28, C6M108–C6M113 (2010)
https://doi.org/10.1116/1.3511789
Rapid patterning of spin-on-glass using ultrasonic nanoimprint
J. Vac. Sci. Technol. B 28, C6M114–C6M121 (2010)
https://doi.org/10.1116/1.3501361
45 nm hp line/space patterning into a thin spin coat film by UV nanoimprint based on condensation
J. Vac. Sci. Technol. B 28, C6M12–C6M16 (2010)
https://doi.org/10.1116/1.3507882
Rapid thermal imprinting of high-aspect-ratio nanostructures with dynamic heating of mold surface
J. Vac. Sci. Technol. B 28, C6M122–C6M124 (2010)
https://doi.org/10.1116/1.3517608
Residual layer uniformity using complementary patterns to compensate for pattern density variation in UV nanoimprint lithography
J. Vac. Sci. Technol. B 28, C6M125–C6M129 (2010)
https://doi.org/10.1116/1.3497015
Spectroscopic ellipsometry optical critical dimension measurements of templates and imprinted resist for patterned magnetic media applications
Zhaoning Yu; Justin Hwu; Yongdong Liu; Zhenpeng Su; Henry Yang; Hongying Wang; Wei Hu; Yuan Xu; Nobuo Kurataka; Yautzong Hsu; Shifu Lee; Gene Gauzner; Kim Lee; David Kuo
J. Vac. Sci. Technol. B 28, C6M130–C6M135 (2010)
https://doi.org/10.1116/1.3507888
Sputtering with an etch-free lift-off in thermal nanoimprint lithography
Andre Mayer; Nicolas Bogdanski; Saskia Möllenbeck; Khalid Dhima; Marc Papenheim; Hella-Christin Scheer
J. Vac. Sci. Technol. B 28, C6M136–C6M139 (2010)
https://doi.org/10.1116/1.3507879
Evaluation of oxygen inhibition for UV-curable resins by adhesion force measurement using scanning probe microscope
Makoto Okada; Masayuki Iwasa; Hiroto Miyake; Takeshi Ohsaki; Yuichi Haruyama; Kazuhiro Kanda; Shinji Matsui
J. Vac. Sci. Technol. B 28, C6M17–C6M22 (2010)
https://doi.org/10.1116/1.3517511
Assessment of release properties in UV nanoimprint lithography using high-aspect-ratio nanoscale molds
J. Vac. Sci. Technol. B 28, C6M23–C6M27 (2010)
https://doi.org/10.1116/1.3503896
Characterizations of nanoembossed ferroelectric films
J. Vac. Sci. Technol. B 28, C6M28–C6M31 (2010)
https://doi.org/10.1116/1.3497018
Electrical properties of transferred metal nanopattern using metal oxide release layer
J. Vac. Sci. Technol. B 28, C6M32–C6M36 (2010)
https://doi.org/10.1116/1.3501352
Fabrication of mesas with micro- and nanopatterned surface relief used as working stamps for step and stamp imprint lithography
J. Vac. Sci. Technol. B 28, C6M37–C6M40 (2010)
https://doi.org/10.1116/1.3497022
Fabrication of ordered nanospheres using a combination of nanoimprint lithography and controlled dewetting
J. Vac. Sci. Technol. B 28, C6M41–C6M44 (2010)
https://doi.org/10.1116/1.3498762
Fabrication of seamless three-dimensional roll mold using direct electron-beam writing on rotating cylindrical substrate
J. Vac. Sci. Technol. B 28, C6M45–C6M49 (2010)
https://doi.org/10.1116/1.3511474
Facile wide-scale defect detection of UV-nanoimprinted resist patterns by fluorescent microscopy
J. Vac. Sci. Technol. B 28, C6M50–C6M56 (2010)
https://doi.org/10.1116/1.3507440
High accuracy UV-nanoimprint lithography step-and-repeat master stamp fabrication for wafer level camera application
J. Vac. Sci. Technol. B 28, C6M57–C6M62 (2010)
https://doi.org/10.1116/1.3518914
Hole mobility enhancement by chain alignment in nanoimprinted poly(3-hexylthiophene) nanogratings for organic electronics
J. Vac. Sci. Technol. B 28, C6M63–C6M67 (2010)
https://doi.org/10.1116/1.3501343
Impact of molecular size on resist filling process in nanoimprint lithography: Molecular dynamics study
J. Vac. Sci. Technol. B 28, C6M68–C6M71 (2010)
https://doi.org/10.1116/1.3511434
Defect analysis for patterned media
Zhengmao Ye; John Fretwell; Kang Luo; Steven Ha; Gerard Schmid; Dwayne LaBrake; Douglas J. Resnick; S. V. Sreenivasan
J. Vac. Sci. Technol. B 28, C6M7–C6M11 (2010)
https://doi.org/10.1116/1.3498752
Impact of the resist properties on the antisticking layer degradation in UV nanoimprint lithography
J. Vac. Sci. Technol. B 28, C6M72–C6M76 (2010)
https://doi.org/10.1116/1.3501339
Impact of substrate deformation on demolding force for thermal imprint process
J. Vac. Sci. Technol. B 28, C6M77–C6M82 (2010)
https://doi.org/10.1116/1.3517537
Imprinted quarter wave plate at terahertz frequency
J. Vac. Sci. Technol. B 28, C6M83–C6M87 (2010)
https://doi.org/10.1116/1.3497023
Long-range ordered aluminum oxide nanotubes by nanoimprint-assisted aluminum film surface engineering
J. Vac. Sci. Technol. B 28, C6M88–C6M92 (2010)
https://doi.org/10.1116/1.3498759
Nanofabrication of surface-enhanced Raman scattering device by an integrated block-copolymer and nanoimprint lithography method
J. Vac. Sci. Technol. B 28, C6M93–C6M97 (2010)
https://doi.org/10.1116/1.3501341
Nanoimprinting for diffractive light trapping in solar cells
Dirk N. Weiss; Hao-Chih Yuan; Benjamin G. Lee; Howard M. Branz; Stephen T. Meyers; Andrew Grenville; Douglas A. Keszler
J. Vac. Sci. Technol. B 28, C6M98–C6M103 (2010)
https://doi.org/10.1116/1.3498754
Nanomechanics
Microelectromechanical systems for biomimetical applications
Rhonira Latif; Enrico Mastropaolo; Andy Bunting; Rebecca Cheung; Thomas Koickal; Alister Hamilton; Michael Newton; Leslie Smith
J. Vac. Sci. Technol. B 28, C6N1–C6N6 (2010)
https://doi.org/10.1116/1.3504892
Micromachined scanning proximal probes with integrated piezoresistive readout and bimetal actuator for high eigenmode operation
Mirosław Woszczyna; Paweł Zawierucha; Piotr Pałetko; Michał Zielony; Teodor Gotszalk; Yanko Sarov; Tzvetan Ivanov; Andreas Frank; Jens-Peter Zöllner; Ivo W. Rangelow
J. Vac. Sci. Technol. B 28, C6N12–C6N17 (2010)
https://doi.org/10.1116/1.3518465
Piezoelectrically driven silicon carbide resonators
J. Vac. Sci. Technol. B 28, C6N18–C6N23 (2010)
https://doi.org/10.1116/1.3498760
Microfabricated resistive high-sensitivity nanoprobe for scanning thermal microscopy
J. Vac. Sci. Technol. B 28, C6N7–C6N11 (2010)
https://doi.org/10.1116/1.3502614
Nanophotonics
On the fabrication of three-dimensional silicon-on-insulator based optical phased array for agile and large angle laser beam steering systems
Amir Hosseini; David Kwong; Yang Zhang; Saurabh A. Chandorkar; Filip Crnogorac; Andrew Carlson; Babak Fallah; Seth Bank; Emanuel Tutuc; John Rogers; R. Fabian W. Pease; Ray T. Chen
J. Vac. Sci. Technol. B 28, C6O1–C6O7 (2010)
https://doi.org/10.1116/1.3511508
Colloidal optical waveguides with integrated local light sources built by capillary force assembly
J. Vac. Sci. Technol. B 28, C6O11–C6O15 (2010)
https://doi.org/10.1116/1.3503897
Resonant coupling to a dipole absorber inside a metamaterial: Anticrossing of the negative index response
Svyatoslav Smolev; Zahyun Ku; S. R. J Brueck; Igal Brener; Michael B. Sinclair; Gregory A. Ten Eyck; W. L. Langston; Lorena I. Basilio
J. Vac. Sci. Technol. B 28, C6O16–C6O20 (2010)
https://doi.org/10.1116/1.3503898
Fabrication and characterization of coupled metal-dielectric-metal nanoantennas
J. Vac. Sci. Technol. B 28, C6O21–C6O25 (2010)
https://doi.org/10.1116/1.3501349
Fabrication techniques for three-dimensional metamaterials in the midinfrared
J. Vac. Sci. Technol. B 28, C6O30–C6O33 (2010)
https://doi.org/10.1116/1.3504586
Self-aligned gold nanocone probe tips
J. Vac. Sci. Technol. B 28, C6O34–C6O37 (2010)
https://doi.org/10.1116/1.3518461
Large area three-dimensional photonic crystals with embedded waveguides
J. Vac. Sci. Technol. B 28, C6O38–C6O44 (2010)
https://doi.org/10.1116/1.3507887
Sub-10 nm patterning of gold nanostructures on silicon-nitride membranes for plasmon mapping with electron energy-loss spectroscopy
J. Vac. Sci. Technol. B 28, C6O45–C6O49 (2010)
https://doi.org/10.1116/1.3501351
Geometry enhanced asymmetric rectifying tunneling diodes
Kwangsik Choi; Geunmin Ryu; Filiz Yesilkoy; Athanasios Chryssis; Neil Goldsman; Mario Dagenais; Martin Peckerar
J. Vac. Sci. Technol. B 28, C6O50–C6O55 (2010)
https://doi.org/10.1116/1.3501350
Waveguide-plasmon resonances in gold-capped silicon-nitride disk photonic crystal slabs
J. Vac. Sci. Technol. B 28, C6O56–C6O59 (2010)
https://doi.org/10.1116/1.3518460
Multilayer pattern transfer for plasmonic color filter applications
J. Vac. Sci. Technol. B 28, C6O60–C6O63 (2010)
https://doi.org/10.1116/1.3511430
Nanostructures
Batch wafer scale fabrication of passivated carbon nanotube transistors for electrochemical sensing applications
J. Vac. Sci. Technol. B 28, C6P1–C6P5 (2010)
https://doi.org/10.1116/1.3504527
Direct synthesis of vertical nanowires from sputtered Fe thin film
J. Vac. Sci. Technol. B 28, C6P11–C6P13 (2010)
https://doi.org/10.1116/1.3501363
Pyrolysis of two-dimensional and three-dimensional interferometrically patterned resist structures
J. Vac. Sci. Technol. B 28, C6P14–C6P17 (2010)
https://doi.org/10.1116/1.3495756
Fabrication and initial characterization of ultrahigh aspect ratio vias in gold using the helium ion microscope
J. Vac. Sci. Technol. B 28, C6P18–C6P23 (2010)
https://doi.org/10.1116/1.3517514
Fabrication of poly(ethylene glycol) hydrogel structures for pharmaceutical applications using electron beam and optical lithography
J. Vac. Sci. Technol. B 28, C6P24–C6P29 (2010)
https://doi.org/10.1116/1.3517716
Nanofabrication of x-ray zone plates using ultrananocrystalline diamond molds and electroforming
Michael J. Wojcik; Vishwanath Joshi; Anirudha V. Sumant; Ralu Divan; Leonidas E. Ocola; Ming Lu; Derrick C. Mancini
J. Vac. Sci. Technol. B 28, C6P30–C6P35 (2010)
https://doi.org/10.1116/1.3501357
Nanomachining and clamping point optimization of silicon carbon nitride resonators using low voltage electron beam lithography and cold development
J. Vac. Sci. Technol. B 28, C6P36–C6P41 (2010)
https://doi.org/10.1116/1.3517683
Nanoporous ultrananocrystalline diamond membranes
J. Vac. Sci. Technol. B 28, C6P42–C6P47 (2010)
https://doi.org/10.1116/1.3501345
Nanostructured silicon membranes for control of molecular transport
J. Vac. Sci. Technol. B 28, C6P48–C6P52 (2010)
https://doi.org/10.1116/1.3518911
Semiconductor crystal islands for three-dimensional integration
J. Vac. Sci. Technol. B 28, C6P53–C6P58 (2010)
https://doi.org/10.1116/1.3511473
Structure and properties of polymer core-shell systems: Helium ion microscopy and electrical conductivity studies
J. Vac. Sci. Technol. B 28, C6P59–C6P65 (2010)
https://doi.org/10.1116/1.3504589
Copper-plated 50 nm -gate fabrication
J. Vac. Sci. Technol. B 28, C6P6–C6P10 (2010)
https://doi.org/10.1116/1.3501346
Noise analysis of carbon nanotube field effect transistors irradiated by electron beam
J. Vac. Sci. Technol. B 28, C6P66–C6P69 (2010)
https://doi.org/10.1116/1.3517517
Plasma etch fabrication of 60:1 aspect ratio silicon nanogratings with 200 nm pitch
Pran Mukherjee; Alexander Bruccoleri; Ralf K. Heilmann; Mark L. Schattenburg; Alex F. Kaplan; L. Jay Guo
J. Vac. Sci. Technol. B 28, C6P70–C6P75 (2010)
https://doi.org/10.1116/1.3507427
Novel Imaging-Optical Lithography
Optical and computed evaluation of keyhole diffractive imaging for lensless x-ray microscopy
J. Vac. Sci. Technol. B 28, C6Q1–C6Q5 (2010)
https://doi.org/10.1116/1.3501340
Projection lithography below lambda/7 through deep-ultraviolet evanescent optical imaging
J. Vac. Sci. Technol. B 28, C6Q12–C6Q19 (2010)
https://doi.org/10.1116/1.3504550
Development of a simple, compact, low-cost interference lithography system
J. Vac. Sci. Technol. B 28, C6Q20–C6Q24 (2010)
https://doi.org/10.1116/1.3504498
Nondestructive detection of deviation in integrated circuits
J. Vac. Sci. Technol. B 28, C6Q25–C6Q27 (2010)
https://doi.org/10.1116/1.3518464
Customized illumination for process window optimization and yield improvement in mask aligner lithography systems
J. Vac. Sci. Technol. B 28, C6Q6–C6Q11 (2010)
https://doi.org/10.1116/1.3518920
Resists
High sensitivity nonchemically amplified molecular resists based on photosensitive dissolution inhibitors
J. Vac. Sci. Technol. B 28, C6S12–C6S18 (2010)
https://doi.org/10.1116/1.3511790
Photopatternable inorganic hardmask
J. Vac. Sci. Technol. B 28, C6S19–C6S22 (2010)
https://doi.org/10.1116/1.3507889
Effects of salty-developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense pattern transfer
J. Vac. Sci. Technol. B 28, C6S23–C6S27 (2010)
https://doi.org/10.1116/1.3504497
Comparison of positive tone versus negative tone resist pattern collapse behavior
J. Vac. Sci. Technol. B 28, C6S6–C6S11 (2010)
https://doi.org/10.1116/1.3518136
Letters
Sputtering of (001)AlN thin films: Control of polarity by a seed layer
E. Milyutin; S. Harada; D. Martin; J. F. Carlin; N. Grandjean; V. Savu; O. Vaszquez-Mena; J. Brugger; P. Muralt
J. Vac. Sci. Technol. B 28, L61–L63 (2010)
https://doi.org/10.1116/1.3501117
Editorial
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.
Vertical silicon nanowedge formation by repetitive dry and wet anisotropic etching combined with 3D self-aligned sidewall nanopatterning
Yasser Pordeli, Céline Steenge, et al.