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Continuous cell air-extracting technique used for fast cell filling of flexible liquid-crystal displays

Wen-Tuan Wu; Chia-Jen Chang; Hsyi-En Cheng; Ching-Ming Hsu; Kun-San Tsen

J. Vac. Sci. Technol. B 28, 673–677 (2010) https://doi.org/10.1116/1.3437008

Abstract

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Semiconductor-superconductor transition and magnetoresistance terraces in an ultrathin superconducting Pb nanobridge

Jian Wang; Jin-Feng Jia; Xu-Cun Ma; Quan-Tong Shen; Tie-Zhu Han; Ai-Zi Jin; Li Lu; Chang-Zhi Gu; Ming-Liang Tian; X. C. Xie; Qi-Kun Xue

J. Vac. Sci. Technol. B 28, 678–681 (2010) https://doi.org/10.1116/1.3437016

Abstract

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Multistage etching process for microscopically smooth tellurite glass surfaces in optical fibers

Aidong Zhang; Aoxiang Lin; Jau-Sheng Wang; Jean Toulouse

J. Vac. Sci. Technol. B 28, 682–686 (2010) https://doi.org/10.1116/1.3437017

Abstract

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Novel split-tip proximal probe for fabrication of nanometer-textured, in-plane oriented polymer films

Beverly Clark, III; M. P. Taylor; H. D. Hallen

J. Vac. Sci. Technol. B 28, 687–692 (2010) https://doi.org/10.1116/1.3437473

Abstract

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Simulations of radical and ion fluxes on a wafer in a ${Cl}_{2} / Ar$ inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments

Emilie Despiau-Pujo; Pascal Chabert; Shailendra Bansropun; Didier Thénot; Patrick Plouhinec; Simone Cassette

J. Vac. Sci. Technol. B 28, 693–701 (2010) https://doi.org/10.1116/1.3437492

Abstract

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Extension of active region in crossbar-type polymer solar photovoltaics induced by highly conductive PEDOT:PSS buffer layer

Tsung-Syun Huang; Chun-Yuan Huang; Yan-Kuin Su; Ying-Chih Chen; Jiun-Shiang Fang; Ten-Chin Wen

J. Vac. Sci. Technol. B 28, 702–705 (2010) https://doi.org/10.1116/1.3437506

Abstract

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Atomic diffusion bonding of wafers with thin nanocrystalline metal films

T. Shimatsu; M. Uomoto

J. Vac. Sci. Technol. B 28, 706–714 (2010) https://doi.org/10.1116/1.3437515

Abstract

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Conformal electroless filling of Cu into patterned amorphous carbon layer modified by oxygen plasma and aminosilane treatments

H. W. Kim; N.-E. Lee

J. Vac. Sci. Technol. B 28, 715–719 (2010) https://doi.org/10.1116/1.3442474

Abstract

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Effect of rapid thermal annealing on ${Mg}_{x} {Zn}_{1 - x} O$ films prepared by radio-frequency magnetron sputtering

Kuang-Po Hsueh; Chun-Ju Tun; Hsien-Chin Chiu; Yu-Ping Huang; Gou-Chung Chi

J. Vac. Sci. Technol. B 28, 720–723 (2010) https://doi.org/10.1116/1.3442476

Abstract

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Carbon nanotube field emitter irradiated by proton beam

Seung-Min Lee; Wal-Jun Kim; Yong-Hyup Kim; Taekeun Yang; Juneyong Han

J. Vac. Sci. Technol. B 28, 724–728 (2010) https://doi.org/10.1116/1.3443571

Abstract

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Fabrication of surface plasmon waveguides and devices in Cytop with integrated microfluidic channels

Charles Chiu; Ewa Lisicka-Skrzek; R. Niall Tait; Pierre Berini

J. Vac. Sci. Technol. B 28, 729–735 (2010) https://doi.org/10.1116/1.3449187

Abstract

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Field emission behavior study of multiwalled carbon nanotube yarn under the influence of adsorbents

Peng Liu; Kaili Jiang; Yang Wei; Kai Liu; Liang Liu; Shoushan Fan

J. Vac. Sci. Technol. B 28, 736–739 (2010) https://doi.org/10.1116/1.3449188

Abstract

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Newly developed electron beam stepper for nanoimprint mold fabrication

Makoto Okada; Takashi Kishiro; Kaori Yanagihara; Masashi Ataka; Norimichi Anazawa; Shinji Matsui

J. Vac. Sci. Technol. B 28, 740–743 (2010) https://doi.org/10.1116/1.3449270

Abstract

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Improving the metallic content of focused electron beam-induced deposits by a scanning electron microscope integrated hydrogen-argon microplasma generator

Hiroyuki Miyazoe; Ivo Utke; Hirokazu Kikuchi; Shinya Kiriu; Vinzenz Friedli; Johann Michler; Kazuo Terashima

J. Vac. Sci. Technol. B 28, 744–750 (2010) https://doi.org/10.1116/1.3449808

Abstract

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Molecular structure effects on dry etching behavior of Si-containing resists in oxygen plasma

R. L. Bruce; T. Lin; R. J. Phaneuf; G. S. Oehrlein; W. Bell; B. Long; C. G. Willson

J. Vac. Sci. Technol. B 28, 751–757 (2010) https://doi.org/10.1116/1.3455496

Abstract

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Numerical testing of the Fowler–Nordheim equation for the electronic field emission from a flat metal and proposition for an improved equation

A. Mayer

J. Vac. Sci. Technol. B 28, 758–762 (2010) https://doi.org/10.1116/1.3455495

Abstract

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Fabrication of nanowires with high aspect ratios utilized by dry etching with ${SF}_{6} : C_{4} F_{8}$ and self-limiting thermal oxidation on Si substrate

Si-Young Park; Sandro J. Di Giacomo; R. Anisha; Paul R. Berger; Phillip E. Thompson; Ilesanmi Adesida

J. Vac. Sci. Technol. B 28, 763–768 (2010) https://doi.org/10.1116/1.3455498

Abstract

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Germanium surface hydrophilicity and low-temperature Ge layer transfer by $Ge - {SiO}_{2}$ bonding

Xiaobo Ma; Weili Liu; Xiaofeng Du; Xuyan Liu; Zhitang Song; Chenglu Lin; Paul K. Chu

J. Vac. Sci. Technol. B 28, 769–774 (2010) https://doi.org/10.1116/1.3455499

Abstract

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Novel technique for formation of metal lines by functional liquid containing metal nanoparticles and reduction of their resistivity by hydrogen treatment

Nguyen Thi Thanh Kieu; Keisuke Ohdaira; Tatsuya Shimoda; Hideki Matsumura

J. Vac. Sci. Technol. B 28, 775–782 (2010) https://doi.org/10.1116/1.3456179

Abstract

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Dual exposure, two-photon, conformal phase mask lithography for three dimensional silicon inverse woodpile photonic crystals

Daniel J. Shir; Erik C. Nelson; Debashis Chanda; Andrew Brzezinski; Paul V. Braun; John A. Rogers; Pierre Wiltzius

J. Vac. Sci. Technol. B 28, 783–788 (2010) https://doi.org/10.1116/1.3456181

Abstract

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Impact of metal etch residues on etch species density and uniformity

Dries Dictus; Denis Shamiryan; Vasile Paraschiv; Werner Boullart; Stefan De Gendt; Chris Vinckier

J. Vac. Sci. Technol. B 28, 789–794 (2010) https://doi.org/10.1116/1.3456619

Abstract

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Effects of argon ion bombardment on the structure and magnetic properties of ultrathin Fe films

Shivaraman Ramaswamy; C. Gopalakrishnan; K. R. Ganesh; K. Jeganathan; M. Ponnavaikko

J. Vac. Sci. Technol. B 28, 795–798 (2010) https://doi.org/10.1116/1.3457935

Abstract

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Effective mobility characteristics of platinum-silicided $p$ -type Schottky barrier metal-oxide-semiconductor field-effect transistor

Moongyu Jang; Myungsim Jun; Taehyoung Zyung

J. Vac. Sci. Technol. B 28, 799–801 (2010) https://doi.org/10.1116/1.3457936

Abstract

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In situ direct visualization of irradiated electron-beam patterns on unprocessed resists using atomic force microscopy

H. Koop; M. Zech; K. Karrai; D. Schnurbusch; M. Müller; T. Gründl; M.-C. Amann; A. W. Holleitner

J. Vac. Sci. Technol. B 28, 802–805 (2010) https://doi.org/10.1116/1.3457938

Abstract

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Novel planarizing scheme for patterned media

Wei Choong Allen Poh; Hang Khume Tan; Lay Ting Ong; Hui Kim Hui; Seng Kai Wong; Kyaw Oo Aung; Eileen Tan; Rachid Sbiaa; Yew Seng Kay; S. N. Piramanayagam

J. Vac. Sci. Technol. B 28, 806–808 (2010) https://doi.org/10.1116/1.3455497

Abstract

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Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms

N. Posseme; T. Chevolleau; R. Bouyssou; T. David; V. Arnal; J. P. Barnes; C. Verove; O. Joubert

J. Vac. Sci. Technol. B 28, 809–816 (2010) https://doi.org/10.1116/1.3456182

Abstract

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Polythiophene-based charge dissipation layer for electron beam lithography of zinc oxide and gallium nitride

R. Dylewicz; S. Lis; R. M. De La Rue; F. Rahman

J. Vac. Sci. Technol. B 28, 817–822 (2010) https://doi.org/10.1116/1.3460903

Abstract

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All-inorganic thermal nanoimprint process

Dirk N. Weiss; Stephen T. Meyers; Douglas A. Keszler

J. Vac. Sci. Technol. B 28, 823–828 (2010) https://doi.org/10.1116/1.3463454

Abstract

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Mechanism of increase in charge-pumping current of metal-nitride-oxide-silicon-field effect transistors during thick dielectric film etching using fluorocarbon gas plasma

Yoshinari Ichihashi; Yasushi Ishikawa; Ryu Shimizu; Seiji Samukawa

J. Vac. Sci. Technol. B 28, 829–833 (2010) https://doi.org/10.1116/1.3456177

Abstract

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High sheet resistance, low temperature coefficient of resistance resistor films for integrated circuits

S. W. Wright; C. P. Judge; M. J. Lee; D. F. Bowers; M. Dunbar; C. D. Wilson

J. Vac. Sci. Technol. B 28, 834–840 (2010) https://doi.org/10.1116/1.3466531

Abstract

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Lithographic performance evaluation of a contaminated extreme ultraviolet mask after cleaning

Simi George; Patrick Naulleau; Uzodinma Okoroanyanwu; Kornelia Dittmar; Christian Holfeld; Andrea Wüest

J. Vac. Sci. Technol. B 28, 841–848 (2010) https://doi.org/10.1116/1.3466999

Abstract

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Wafer-scale nanopatterning using electrodeposition

Leung Kway Lee; Pei-Cheng Ku

J. Vac. Sci. Technol. B 28, 849–853 (2010) https://doi.org/10.1116/1.3466883

Abstract

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High-aspect-ratio deep Si etching in ${SF}_{6} / O_{2}$ plasma. I. Characteristics of radical reactions with high-aspect-ratio patterns

Takahiro Maruyama; Takeshi Narukage; Ryota Onuki; Nobuo Fujiwara

J. Vac. Sci. Technol. B 28, 854–861 (2010) https://doi.org/10.1116/1.3466794

Abstract

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High-aspect-ratio deep Si etching in ${SF}_{6} / O_{2}$ plasma. II. Mechanism of lateral etching in high-aspect-ratio features

Takahiro Maruyama; Takeshi Narukage; Ryota Onuki; Nobuo Fujiwara

J. Vac. Sci. Technol. B 28, 862–868 (2010) https://doi.org/10.1116/1.3466884

Abstract

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Synergistic Compositions of Colloidal Nanodiamond as Lubricant-additive

M. G. Ivanov; S. V. Pavlyshko; D. M. Ivanov; I. Petrov; O. Shenderova

J. Vac. Sci. Technol. B 28, 869–877 (2010) https://doi.org/10.1116/1.3478245

Abstract

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Simulation study of the in-plane-type triode carbon nanotube emitter

Hiroshi Furuta; Kazuhisa Ishii; Kouji Okada; Mamoru Furuta; Takashi Hirao

J. Vac. Sci. Technol. B 28, 878–881 (2010) https://doi.org/10.1116/1.3456180

Abstract

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Fabrication of submicron-sized features in InP/InGaAsP/AlGaInAs quantum well heterostructures by optimized inductively coupled plasma etching with ${Cl}_{2} / Ar / N_{2}$ chemistry

R. Dylewicz; R. M. De La Rue; R. Wasielewski; P. Mazur; G. Mezősi; A. C. Bryce

J. Vac. Sci. Technol. B 28, 882–890 (2010) https://doi.org/10.1116/1.3466811

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PAPERS FROM THE 37th ANNUAL CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES

Preface

Alex Demkov; Rudy Ludeke

J. Vac. Sci. Technol. B 28, C5a1 (2010) https://doi.org/10.1116/1.3396365

Extract

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Epitaxial Oxides

Synthesis and calorimetric studies of oxide multilayer systems: Solid oxide fuel cell cathode and electrolyte materials

Nihan Kemik; Sergey V. Ushakov; Nicole Schichtel; Carsten Korte; Yayoi Takamura; Alexandra Navrotsky

J. Vac. Sci. Technol. B 28, C5A1–C5A5 (2010) https://doi.org/10.1116/1.3420396

Abstract

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Survey of fractured ${SrTiO}_{3}$ surfaces: From the micrometer to nanometer scale

TeYu Chien; Nathan P. Guisinger; John W. Freeland

J. Vac. Sci. Technol. B 28, C5A11–C5A13 (2010) https://doi.org/10.1116/1.3420395

Abstract

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Phase separation and microstructure of ${BaTiO}_{3} - {CoFe}_{2} O_{4}$ epitaxial nanocomposite films deposited under low working pressure

Kyoung Sun Kim; Seung Ho Han; Ho Gi Kim; Jeong Seog Kim; Chae Il Cheon

J. Vac. Sci. Technol. B 28, C5A14–C5A19 (2010) https://doi.org/10.1116/1.3429597

Abstract

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Domain dynamics in epitaxial $Pb ({Zr}_{0.2} {Ti}_{0.8}) O_{3}$ films studied by piezoelectric force microscopy

Levente J. Klein; Catherine Dubourdieu; Martin M. Frank; Jason Hoffman; James W. Reiner; Charles H. Ahn

J. Vac. Sci. Technol. B 28, C5A20–C5A23 (2010) https://doi.org/10.1116/1.3442802

Abstract

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Polar catastrophe and the spin-polarized electron gas at the ${LaMnO}_{3} / {SrMnO}_{3}$ interface

B. R. K. Nanda; S. Satpathy

J. Vac. Sci. Technol. B 28, C5A24–C5A27 (2010) https://doi.org/10.1116/1.3454370

Abstract

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Growth and characterization of PZT/LSMO multiferroic heterostructures

C. A. F. Vaz; Y. Segal; J. Hoffman; F. J. Walker; C. H. Ahn

J. Vac. Sci. Technol. B 28, C5A6–C5A10 (2010) https://doi.org/10.1116/1.3427140

Abstract

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Epitaxial oxides on silicon

Morphology of epitaxial ${SrTiO}_{3} / Si$ (001) determined using three-dimensional diffraction profile analysis

Y. Segal; J. W. Reiner; Z. Zhang; C. H. Ahn; F. J. Walker

J. Vac. Sci. Technol. B 28, C5B1–C5B4 (2010) https://doi.org/10.1116/1.3420394

Abstract

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Thermal stability of thin ${ZrO}_{2}$ films prepared by a sol-gel process on Si(001) substrates

H. Döscher; G. Lilienkamp; P. Iskra; M. Kazempoor; W. Daum

J. Vac. Sci. Technol. B 28, C5B5–C5B11 (2010) https://doi.org/10.1116/1.3425637

Abstract

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Graphene and nanotubes

Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments

Luxmi; N. Srivastava; R. M. Feenstra; P. J. Fisher

J. Vac. Sci. Technol. B 28, C5C1–C5C7 (2010) https://doi.org/10.1116/1.3420393

Abstract

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Structural and electronic properties of carbon nanocylinder consisting of nanoribbon-walls with arrayed-oxygen hinges

Yuto Fujii; Akiko Natori; Jun Nakamura

J. Vac. Sci. Technol. B 28, C5C8–C5C11 (2010) https://doi.org/10.1116/1.3463148

Abstract

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Biological interfaces

Multitechnique characterization of adsorbed peptide and protein orientation: $LK 3_{10}$ and Protein G B1

J. E. Baio; T. Weidner; N. T. Samuel; Keith McCrea; Loren Baugh; Patrick S. Stayton; David G. Castner

J. Vac. Sci. Technol. B 28, C5D1–C5D8 (2010) https://doi.org/10.1116/1.3456176

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Quantum dots

InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum-dash formation with InGaAsP decomposition

F. Genz; A. Lenz; H. Eisele; L. Ivanova; R. Timm; U. W. Pohl; M. Dähne; D. Franke; H. Künzel

J. Vac. Sci. Technol. B 28, C5E1–C5E7 (2010) https://doi.org/10.1116/1.3456173

Abstract

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Atomic structure and strain of the InAs wetting layer growing on $GaAs (001) - c (4 \times 4)$

C. Prohl; B. Höpfner; J. Grabowski; M. Dähne; H. Eisele

J. Vac. Sci. Technol. B 28, C5E13–C5E21 (2010) https://doi.org/10.1116/1.3456169

Abstract

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Vibrational spectra of quantum dots formed by Langmuir–Blodgett technique

A. Milekhin; L. Sveshnikova; T. Duda; N. Surovtsev; S. Adichtchev; L. Ding; D. R. T. Zahn

J. Vac. Sci. Technol. B 28, C5E22–C5E24 (2010) https://doi.org/10.1116/1.3442799

Abstract

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Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses

O. Moshe; D. H. Rich; B. Damilano; J. Massies

J. Vac. Sci. Technol. B 28, C5E25–C5E34 (2010) https://doi.org/10.1116/1.3435325

Abstract

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Fabrication and coupling investigation of films of PbS quantum dots

Wei Lü; Fumihiko Yamada; Itaru Kamiya

J. Vac. Sci. Technol. B 28, C5E8–C5E12 (2010) https://doi.org/10.1116/1.3456172

Abstract

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Organic films, interlayers, and devices

Dual parameter ballistic electron emission spectroscopy analysis of inhomogeneous interfaces

Cedric Troadec; Kuan Eng Johnson Goh

J. Vac. Sci. Technol. B 28, C5F1–C5F4 (2010) https://doi.org/10.1116/1.3428546

Abstract

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Probing and modeling of interfacial carrier motion in organic devices by optical second harmonic generation

Mitsumasa Iwamoto; Takaaki Manaka; Martin Weis; Dai Taguchi

J. Vac. Sci. Technol. B 28, C5F12–C5F16 (2010) https://doi.org/10.1116/1.3454371

Abstract

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In situ investigation of CuPc thin films grown on vicinal Si(111)

L. Ding; M. Friedrich; O. D. Gordan; D. R. T. Zahn

J. Vac. Sci. Technol. B 28, C5F17–C5F21 (2010) https://doi.org/10.1116/1.3442797

Abstract

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Mobility saturation in tapered edge bottom contact copper phthalocyanine thin film transistors

James E. Royer; Jeongwon Park; Corneliu Colesniuc; Joon Sung Lee; Thomas Gredig; Sangyeob Lee; Sungho Jin; Ivan K. Schuller; William C. Trogler; Andrew C. Kummel

J. Vac. Sci. Technol. B 28, C5F22–C5F27 (2010) https://doi.org/10.1116/1.3464771

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Control of surface morphology and electronic properties of III-V semiconductors using molecular modification

Fumihiko Yamada; Shuichi Arakawa; Itaru Kamiya

J. Vac. Sci. Technol. B 28, C5F28–C5F32 (2010) https://doi.org/10.1116/1.3447228

Abstract

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Real-time monitoring of the evolving morphology and molecular structure at an organic-inorganic semiconductor interface: SnPc on GaAs(001)

D. A. Evans; A. R. Vearey-Roberts; O. R. Roberts; A. C. Brieva; A. Bushell; G. T. Williams; D. P. Langstaff; G. Cabailh; I. T. McGovern

J. Vac. Sci. Technol. B 28, C5F5–C5F11 (2010) https://doi.org/10.1116/1.3464769

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Scanning probe techniques for atom manipulation and nanoscale characterization

Atom-by-atom assembly and spectroscopy of In/InAs(111)A adatom chains by low-temperature scanning tunneling microscopy

Jianshu Yang; Christophe Nacci; Kiyoshi Kanisawa; Stefan Fölsch

J. Vac. Sci. Technol. B 28, C5G1–C5G4 (2010) https://doi.org/10.1116/1.3430546

Abstract

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Cross-sectional scanning tunneling microscopy and spectroscopy of nonpolar $GaN (1 \bar{1} 00)$ surfaces

H. Eisele; S. Borisova; L. Ivanova; M. Dähne; Ph. Ebert

J. Vac. Sci. Technol. B 28, C5G11–C5G18 (2010) https://doi.org/10.1116/1.3456166

Abstract

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Nanoscale electrical characterization of arrowhead defects in GaInP thin films grown on Ge

I. Beinik; B. Galiana; M. Kratzer; C. Teichert; I. Rey-Stolle; C. Algora; P. Tejedor

J. Vac. Sci. Technol. B 28, C5G5–C5G10 (2010) https://doi.org/10.1116/1.3454373

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Interface characterization

In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si(100)

Henning Döscher; Bernardette Kunert; Andreas Beyer; Oliver Supplie; Kerstin Volz; Wolfgang Stolz; Thomas Hannappel

J. Vac. Sci. Technol. B 28, C5H1–C5H6 (2010) https://doi.org/10.1116/1.3466529

Abstract

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Device-related phenomena

Bias stress stability of zinc-tin-oxide thin-film transistors with ${Al}_{2} O_{3}$ gate dielectrics

J. Triska; J. F. Conley, Jr.; R. Presley; J. F. Wager

J. Vac. Sci. Technol. B 28, C5I1–C5I6 (2010) https://doi.org/10.1116/1.3455494

Abstract

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Ex situ Ohmic contacts to $n -InGaAs$

Ashish Baraskar; Mark A. Wistey; Vibhor Jain; Evan Lobisser; Uttam Singisetti; Greg Burek; Yong Ju Lee; Brian Thibeault; Arthur Gossard; Mark Rodwell

J. Vac. Sci. Technol. B 28, C5I7–C5I9 (2010) https://doi.org/10.1116/1.3454372

Abstract

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Letters

Scatterometric porosimetry: A new characterization technique for porous material patterned structures

R. Bouyssou; M. El Kodadi; C. Licitra; T. Chevolleau; M. Besacier; N. Posseme; O. Joubert; P. Schiavone

J. Vac. Sci. Technol. B 28, L31–L34 (2010) https://doi.org/10.1116/1.3457489

Abstract

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Electric field induced motion of metallic droplets: Application to submicron contactor

H. Dallaporta; M. Prestigiacomo; F. Bedu; D. Tonneau; D. Chatain; P. Sudraud

J. Vac. Sci. Technol. B 28, L35–L38 (2010) https://doi.org/10.1116/1.3462963

Abstract

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Issues

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