Skip Nav Destination

Issues

Select Year

Issue

Review Article

Low-dimensional oxide nanostructures on metals: Hybrid systems with novel properties

Falko P. Netzer; Francesco Allegretti; Svetlozar Surnev

J. Vac. Sci. Technol. B 28, 1–16 (2010) https://doi.org/10.1116/1.3268503

Abstract

View articletitled, Low-dimensional oxide nanostructures on metals: Hybrid systems with novel properties

Open the PDF for in another window

Regular Articles

Improvement of Ohmic contacts to ${In}_{0.65} {Ga}_{0.35} Sb$ using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors

E. Mairiaux; L. Desplanque; X. Wallart; M. Zaknoune

J. Vac. Sci. Technol. B 28, 17–20 (2010) https://doi.org/10.1116/1.3268134

Abstract

View articletitled, Improvement of Ohmic contacts to <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>In</mtext></mrow><mrow><mn>0.65</mn></mrow></msub><msub><mrow><mtext>Ga</mtext></mrow><mrow><mn>0.35</mn></mrow></msub><mtext>Sb</mtext></mrow></math> using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors

Open the PDF for in another window

Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

Christian Kallesøe; Kristian Mølhave; Kasper F. Larsen; Daniel Engstrøm; Torben M. Hansen; Peter Bøggild; Thomas Mårtensson; Magnus Borgström; Lars Samuelson

J. Vac. Sci. Technol. B 28, 21–26 (2010) https://doi.org/10.1116/1.3268135

Abstract

View articletitled, Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

Open the PDF for in another window

Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes

Hong-Yeol Kim; Jihyun Kim; F. Ren; Soohwan Jang

J. Vac. Sci. Technol. B 28, 27–29 (2010) https://doi.org/10.1116/1.3268136

Abstract

View articletitled, Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes

Open the PDF for in another window

Step-width adjustment in fabrication of staircase structures

P. Li; S.-Y. Lee; S. C. Jeon; J. S. Kim; K. N. Kim; M. S. Hyun; J. J. Yoo; J. W. Kim

J. Vac. Sci. Technol. B 28, 30–35 (2010) https://doi.org/10.1116/1.3269794

Abstract

View articletitled, Step-width adjustment in fabrication of staircase structures

Open the PDF for in another window

Fully automated hot embossing processes utilizing high resolution working stamps

T. Glinsner; T. Veres; G. Kreindl; E. Roy; K. Morton; T. Wieser; C. Thanner; D. Treiblmayr; R. Miller; P. Lindner

J. Vac. Sci. Technol. B 28, 36–41 (2010) https://doi.org/10.1116/1.3269800

Abstract

View articletitled, Fully automated hot embossing processes utilizing high resolution working stamps

Open the PDF for in another window

Graphoepitaxy of block copolymers using selectively removable templates

F. Ilievski; C. A. Ross

J. Vac. Sci. Technol. B 28, 42–44 (2010) https://doi.org/10.1116/1.3271259

Abstract

View articletitled, Graphoepitaxy of block copolymers using selectively removable templates

Open the PDF for in another window

Effect of process related and haze defects on $193 nm$ immersion lithography

C. J. Tay; C. Quan; M. L. Ling; Q. Lin; G. S. Chua

J. Vac. Sci. Technol. B 28, 45–51 (2010) https://doi.org/10.1116/1.3271332

Abstract

View articletitled, Effect of process related and haze defects on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>193</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> immersion lithography

Open the PDF for in another window

Passivation of $Al N ∕ Ga N$ high electron mobility transistor using ozone treatment

C. F. Lo; C. Y. Chang; S. J. Pearton; I. I. Kravchenko; A. M. Dabiran; A. M. Wowchak; B. Cui; P. P. Chow; F. Ren

J. Vac. Sci. Technol. B 28, 52–55 (2010) https://doi.org/10.1116/1.3271333

Abstract

View articletitled, Passivation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> high electron mobility transistor using ozone treatment

Open the PDF for in another window

Advanced in situ pre-Ni silicide (Siconi) cleaning at $65 nm$ to resolve defects in $Ni {Si}_{x}$ modules

Ruipeng Yang; Na Su; Paolo Bonfanti; Jiaxiang Nie; Jay Ning; Tomi T. Li

J. Vac. Sci. Technol. B 28, 56–61 (2010) https://doi.org/10.1116/1.3271334

Abstract

View articletitled, Advanced in situ pre-Ni silicide (Siconi) cleaning at <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>65</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> to resolve defects in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ni</mi><msub><mi mathvariant="normal">Si</mi><mi>x</mi></msub></mrow></math> modules

Open the PDF for in another window

Metastable structure and magnetism of Cr-doped AlN in AlN/TiN multilayers

F. Zeng; B. Fan; Y. C. Yang; P. Y. Yang; J. T. Luo; C. Chen; F. Pan; W. S. Yan

J. Vac. Sci. Technol. B 28, 62–65 (2010) https://doi.org/10.1116/1.3271335

Abstract

View articletitled, Metastable structure and magnetism of Cr-doped AlN in AlN/TiN multilayers

Open the PDF for in another window

Optimization of layer structure supporting long range surface plasmons for surface plasmon-enhanced fluorescence spectroscopy biosensors

Chun Jen Huang; Jakub Dostalek; Wolfgang Knoll

J. Vac. Sci. Technol. B 28, 66–72 (2010) https://doi.org/10.1116/1.3271336

Abstract

View articletitled, Optimization of layer structure supporting long range surface plasmons for surface plasmon-enhanced fluorescence spectroscopy biosensors

Open the PDF for in another window

Analysis and metrology with a focused helium ion beam

Sybren Sijbrandij; John Notte; Larry Scipioni; Chuong Huynh; Colin Sanford

J. Vac. Sci. Technol. B 28, 73–77 (2010) https://doi.org/10.1116/1.3271254

Abstract

View articletitled, Analysis and metrology with a focused helium ion beam

Open the PDF for in another window

Direct thermal-UV nanoimprint of an iron-containing organometallic hybrid film

Huilan Han; Abhinav Bhushan; Frank Yaghmaie; Cristina E. Davis

J. Vac. Sci. Technol. B 28, 78–81 (2010) https://doi.org/10.1116/1.3271337

Abstract

View articletitled, Direct thermal-UV nanoimprint of an iron-containing organometallic hybrid film

Open the PDF for in another window

Sub- $200 nm$ gap electrodes by soft UV nanoimprint lithography using polydimethylsiloxane mold without external pressure

F. Hamouda; G. Barbillon; F. Gaucher; B. Bartenlian

J. Vac. Sci. Technol. B 28, 82–85 (2010) https://doi.org/10.1116/1.3273535

Abstract

View articletitled, Sub-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>200</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> gap electrodes by soft UV nanoimprint lithography using polydimethylsiloxane mold without external pressure

Open the PDF for in another window

Making high-fidelity imprint template by resist patterns over a flexible conductive polymer substrate

Xiangdong Ye; Yucheng Ding; Yugang Duan; Hongzhong Liu; Jinyou Shao

J. Vac. Sci. Technol. B 28, 86–89 (2010) https://doi.org/10.1116/1.3273601

Abstract

View articletitled, Making high-fidelity imprint template by resist patterns over a flexible conductive polymer substrate

Open the PDF for in another window

Spin-coatable $Hf O_{2}$ resist for optical and electron beam lithographies

M. S. M. Saifullah; M. Z. R. Khan; David G. Hasko; Eunice S. P. Leong; Xue L. Neo; Eunice T. L. Goh; David Anderson; Geraint A. C. Jones; Mark E. Welland

J. Vac. Sci. Technol. B 28, 90–95 (2010) https://doi.org/10.1116/1.3273536

Abstract

View articletitled, Spin-coatable <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> resist for optical and electron beam lithographies

Open the PDF for in another window

$640 \times 480 pixel$ active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target

M. Nanba; Y. Takiguchi; Y. Honda; Y. Hirano; T. Watabe; N. Egami; K. Miya; K. Nakamura; M. Taniguchi; S. Itoh; A. Kobayashi

J. Vac. Sci. Technol. B 28, 96–103 (2010) https://doi.org/10.1116/1.3272732

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>640</mn><mo>×</mo><mn>480</mn><mtext> </mtext><mtext>pixel</mtext></mrow></math> active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target

Open the PDF for in another window

Roller-reversal imprint process for preparation of large-area microstructures

Hongzhong Liu; Weitao Jiang; Yucheng Ding; Yongsheng Shi; Lei Yin

J. Vac. Sci. Technol. B 28, 104–109 (2010) https://doi.org/10.1116/1.3272717

Abstract

View articletitled, Roller-reversal imprint process for preparation of large-area microstructures

Open the PDF for in another window

Microstructures and magnetic properties of amorphous ${Tb}_{x} {Co}_{1 - x}$ films deposited by facing target magnetron-sputtering system with divergent magnetic field

Taewan Kim; Hyun-Yong Lee; Kyungil Lee; Jae Youn Hwang

J. Vac. Sci. Technol. B 28, 110–115 (2010) https://doi.org/10.1116/1.3275959

Abstract

View articletitled, Microstructures and magnetic properties of amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Tb</mtext></mrow><mi>x</mi></msub><msub><mrow><mtext>Co</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></mrow></math> films deposited by facing target magnetron-sputtering system with divergent magnetic field

Open the PDF for in another window

Improvement in bias stability of amorphous- $In Ga Zn O_{4}$ thin film transistors with $Si O_{x}$ passivation layers

Wantae Lim; E. A. Douglas; D. P. Norton; S. J. Pearton; F. Ren; Young-Woo Heo; S. Y. Son; J. H. Yuh

J. Vac. Sci. Technol. B 28, 116–119 (2010) https://doi.org/10.1116/1.3276774

Abstract

View articletitled, Improvement in bias stability of amorphous-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">Zn</mi><msub><mi mathvariant="normal">O</mi><mn>4</mn></msub></mrow></math> thin film transistors with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mi>x</mi></msub></mrow></math> passivation layers

Open the PDF for in another window

Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency $C H_{2} F_{2} ∕ H_{2} ∕ Ar$ capacitively coupled plasmas

B. S. Kwon; J. S. Kim; N.-E. Lee; S. K. Lee

J. Vac. Sci. Technol. B 28, 120–127 (2010) https://doi.org/10.1116/1.3276701

Abstract

View articletitled, Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">C</mi><msub><mi mathvariant="normal">H</mi><mn>2</mn></msub><msub><mi mathvariant="normal">F</mi><mn>2</mn></msub><mo>∕</mo><msub><mi mathvariant="normal">H</mi><mn>2</mn></msub><mo>∕</mo><mi mathvariant="normal">Ar</mi></mrow></math> capacitively coupled plasmas

Open the PDF for in another window

Four beams surface plasmon interference nanoscale lithography for patterning of two-dimensional periodic features

K. V. Sreekanth; V. M. Murukeshan

J. Vac. Sci. Technol. B 28, 128–130 (2010) https://doi.org/10.1116/1.3276702

Abstract

View articletitled, Four beams surface plasmon interference nanoscale lithography for patterning of two-dimensional periodic features

Open the PDF for in another window

Ultrahigh selective etching of ${Si}_{3} N_{4}$ films over $Si O_{2}$ films for silicon nitride gate spacer etching

Sunghoon Lee; Jinho Oh; Kyumin Lee; Hyunchul Sohn

J. Vac. Sci. Technol. B 28, 131–137 (2010) https://doi.org/10.1116/1.3290752

Abstract

View articletitled, Ultrahigh selective etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Si</mi><mn>3</mn></msub><msub><mi mathvariant="normal">N</mi><mn>4</mn></msub></mrow></math> films over <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> films for silicon nitride gate spacer etching

Open the PDF for in another window

Room-temperature capillary-imprint lithography for making micro-/nanostructures in large areas

Xiangdong Ye; Yucheng Ding; Yugang Duan; Hongzhong Liu; Bingheng Lu

J. Vac. Sci. Technol. B 28, 138–142 (2010) https://doi.org/10.1116/1.3290753

Abstract

View articletitled, Room-temperature capillary-imprint lithography for making micro-/nanostructures in large areas

Open the PDF for in another window

Parameter study for silicon grass formation in Bosch process

KyuBong Jung; WooJin Song; Hyun Woo Lim; Caroline Sunyong Lee

J. Vac. Sci. Technol. B 28, 143–148 (2010) https://doi.org/10.1116/1.3280131

Abstract

View articletitled, Parameter study for silicon grass formation in Bosch process

Open the PDF for in another window

Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy

M. Darnon; T. Chevolleau; T. David; J. Ducote; N. Posseme; R. Bouyssou; F. Bailly; D. Perret; O. Joubert

J. Vac. Sci. Technol. B 28, 149–156 (2010) https://doi.org/10.1116/1.3276703

Abstract

View articletitled, Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy

Open the PDF for in another window

$Ga As ∕ Al Ox$ micropillar fabrication for small mode volume photon sources

John M. Choi; Kevin L. Silverman; Martin J. Stevens; Todd L. Harvey; Richard P. Mirin

J. Vac. Sci. Technol. B 28, 157–162 (2010) https://doi.org/10.1116/1.3280163

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Al</mi><mi>Ox</mi></mrow></math> micropillar fabrication for small mode volume photon sources

Open the PDF for in another window

Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer

Xing Wei; Aimin Wu; Xiang Wang; Xianyuan Li; Fei Ye; Jie Chen; Meng Chen; Bo Zhang; Chenglu Li; Miao Zhang; Xi Wang

J. Vac. Sci. Technol. B 28, 163–168 (2010) https://doi.org/10.1116/1.3290750

Abstract

View articletitled, Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer

Open the PDF for in another window

Stenciled conducting bismuth nanowires

Veronica Savu; Sam Neuser; Guillermo Villanueva; Oscar Vazquez-Mena; Katrin Sidler; Juergen Brugger

J. Vac. Sci. Technol. B 28, 169–172 (2010) https://doi.org/10.1116/1.3292630

Abstract

View articletitled, Stenciled conducting bismuth nanowires

Open the PDF for in another window

Nanoindentation study of thin plasma enhanced chemical vapor deposition SiCOH low- $k$ films modified in $He / H_{2}$ downstream plasma

Kris Vanstreels; Adam M. Urbanowicz

J. Vac. Sci. Technol. B 28, 173–179 (2010) https://doi.org/10.1116/1.3293200

Abstract

View articletitled, Nanoindentation study of thin plasma enhanced chemical vapor deposition SiCOH low-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> films modified in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>He</mtext><mo>/</mo><msub><mtext>H</mtext><mn>2</mn></msub></mrow></math> downstream plasma

Open the PDF for in another window

Surface topography and physicochemistry of silver containing titanium nitride nanocomposite coatings

Kathryn Whitehead; Peter Kelly; Heqing Li; Joanna Verran

J. Vac. Sci. Technol. B 28, 180–187 (2010) https://doi.org/10.1116/1.3293232

Abstract

View articletitled, Surface topography and physicochemistry of silver containing titanium nitride nanocomposite coatings

Open the PDF for in another window

Effects of silver deposition on $405 nm$ light-driven zinc oxide photocatalyst

Shigeyuki Seki; Takumi Sekizawa; Koichi Haga; Tomoaki Sato; Mitsuhiro Takeda; Yoshiyuki Seki; Yutaka Sawada; Kunio Yubuta; Toetsu Shishido

J. Vac. Sci. Technol. B 28, 188–193 (2010) https://doi.org/10.1116/1.3268133

Abstract

View articletitled, Effects of silver deposition on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>405</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> light-driven zinc oxide photocatalyst

Open the PDF for in another window

Fabrication of large area ultrathin silicon membrane: Application for high efficiency extreme ultraviolet diffraction gratings

C. Constancias; B. Dalzotto; P. Michallon; J. Wallace; M. Saib

J. Vac. Sci. Technol. B 28, 194–197 (2010) https://doi.org/10.1116/1.3290746

Abstract

View articletitled, Fabrication of large area ultrathin silicon membrane: Application for high efficiency extreme ultraviolet diffraction gratings

Open the PDF for in another window

Magnetic soft x-ray imaging of vortex core dynamics

Brooke L. Mesler; Kristen Buchanan; Mi-Young Im; Erik Anderson; Peter Fischer

J. Vac. Sci. Technol. B 28, 198–201 (2010) https://doi.org/10.1116/1.3275939

Abstract

View articletitled, Magnetic soft x-ray imaging of vortex core dynamics

Open the PDF for in another window

Scratch properties of nickel thin films using atomic force microscopy

Ampere A. Tseng; Jun-ichi Shirakashi; Shyankay Jou; Jen-Ching Huang; T. P. Chen

J. Vac. Sci. Technol. B 28, 202–210 (2010) https://doi.org/10.1116/1.3292944

Abstract

View articletitled, Scratch properties of nickel thin films using atomic force microscopy

Open the PDF for in another window

Indium oxide thin film transistors fabricated by low-energetic ion bombardment technique at room temperature

A. K. Chu; T. I. Hong; W. C. Tien

J. Vac. Sci. Technol. B 28, 211–215 (2010) https://doi.org/10.1116/1.3280130

Abstract

View articletitled, Indium oxide thin film transistors fabricated by low-energetic ion bombardment technique at room temperature

Open the PDF for in another window

Errata

Erratum: “Characterization of focused-ion-beam induced defect structures in graphite for the future guided self-assembly of molecules” [J. Vac. Sci. Technol. B 27, 2209 (2009)]

Sarah E. O'Donnell; Petra Reinke

J. Vac. Sci. Technol. B 28, 216 (2010) https://doi.org/10.1116/1.3269793

Extract

View articletitled, Erratum: “Characterization of focused-ion-beam induced defect structures in graphite for the future guided self-assembly of molecules” [J. Vac. Sci. Technol. B 27, 2209 (2009)]

Open the PDF for in another window

International Workshop on Insight in Semiconductor Device Fabrication, Metrology, and Modeling (INSIGHT 2009)

Plenary Session

Simulation of $p - n$ junctions: Present and future challenges for technologies beyond 32 nm

Lourdes Pelaz; Luis A. Marqués; María Aboy; Iván Santos; Pedro López; Ray Duffy

J. Vac. Sci. Technol. B 28, C1A1–C1A6 (2010) https://doi.org/10.1116/1.3231481

Abstract

View articletitled, Simulation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>-</mtext><mi>n</mi></mrow></math> junctions: Present and future challenges for technologies beyond 32 nm

Open the PDF for in another window

Advanced Anneals and Implant Technology

Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment

Damiano Giubertoni; Giancarlo Pepponi; Mehmet Alper Sahiner; Stephen P. Kelty; Salvatore Gennaro; Massimo Bersani; Max Kah; Karen J. Kirkby; Roisin Doherty; Majeed A. Foad; F. Meirer; C. Streli; Joseph C. Woicik; Piero Pianetta

J. Vac. Sci. Technol. B 28, C1B1–C1B5 (2010) https://doi.org/10.1116/1.3242637

Abstract

View articletitled, Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment

Open the PDF for in another window

1-D Metrology

Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves

Janusz Bogdanowicz; Fabian Dortu; Trudo Clarysse; Wilfried Vandervorst; Erik Rosseel; Ngoc Duy Nguyen; Derrick Shaughnessy; Alex Salnik; Lena Nicolaides

J. Vac. Sci. Technol. B 28, C1C1–C1C7 (2010) https://doi.org/10.1116/1.3269737

Abstract

View articletitled, Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves

Open the PDF for in another window

Photoreflectance characterization of ultrashallow junction activation in millisecond annealing

Will Chism; Michael Current; Victor Vartanian

J. Vac. Sci. Technol. B 28, C1C15–C1C20 (2010) https://doi.org/10.1116/1.3253327

Abstract

View articletitled, Photoreflectance characterization of ultrashallow junction activation in millisecond annealing

Open the PDF for in another window

Study of submelt laser induced junction nonuniformities using Therma-Probe

Erik Rosseel; Janusz Bogdanowicz; Trudo Clarysse; Wilfried Vandervorst; Claude Ortolland; Thomas Hoffmann; Alex Salnik; Lena Nicolaides; Sang-Hyun Han; Dirch H. Petersen; Rong Lin; Ole Hansen

J. Vac. Sci. Technol. B 28, C1C21–C1C26 (2010) https://doi.org/10.1116/1.3237150

Abstract

View articletitled, Study of submelt laser induced junction nonuniformities using Therma-Probe

Open the PDF for in another window

Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Dirch H. Petersen; Ole Hansen; Torben M. Hansen; Peter Bøggild; Rong Lin; Daniel Kjær; Peter F. Nielsen; Trudo Clarysse; Wilfried Vandervorst; Erik Rosseel; Nick S. Bennett; Nick E. B. Cowern

J. Vac. Sci. Technol. B 28, C1C27–C1C33 (2010) https://doi.org/10.1116/1.3224898

Abstract

View articletitled, Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Open the PDF for in another window

Sensitivity study of micro four-point probe measurements on small samples

Fei Wang; Dirch H. Petersen; Torben M. Hansen; Toke R. Henriksen; Peter Bøggild; Ole Hansen

J. Vac. Sci. Technol. B 28, C1C34–C1C40 (2010) https://doi.org/10.1116/1.3224889

Abstract

View articletitled, Sensitivity study of micro four-point probe measurements on small samples

Open the PDF for in another window

Electrical characterization of InGaAs ultra-shallow junctions

Dirch H. Petersen; Ole Hansen; Peter Bøggild; Rong Lin; Peter F. Nielsen; Dennis Lin; Christoph Adelmann; Alireza Alian; Clement Merckling; Julien Penaud; Guy Brammertz; Jozefien Goossens; Wilfried Vandervorst; Trudo Clarysse

J. Vac. Sci. Technol. B 28, C1C41–C1C47 (2010) https://doi.org/10.1116/1.3231492

Abstract

View articletitled, Electrical characterization of InGaAs ultra-shallow junctions

Open the PDF for in another window

Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants

A. Merkulov; P. Peres; S. Choi; F. Horreard; H.-U. Ehrke; N. Loibl; M. Schuhmacher

J. Vac. Sci. Technol. B 28, C1C48–C1C53 (2010) https://doi.org/10.1116/1.3225588

Abstract

View articletitled, Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants

Open the PDF for in another window

Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy

H.-U. Ehrke; N. Loibl; M. P. Moret; F. Horréard; J. Choi; C. Hombourger; V. Paret; R. Benbalagh; N. Morel; M. Schuhmacher

J. Vac. Sci. Technol. B 28, C1C54–C1C58 (2010) https://doi.org/10.1116/1.3253352

Abstract

View articletitled, Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy

Open the PDF for in another window

Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon

G. Pepponi; D. Giubertoni; M. Bersani; F. Meirer; D. Ingerle; G. Steinhauser; C. Streli; P. Hoenicke; B. Beckhoff

J. Vac. Sci. Technol. B 28, C1C59–C1C64 (2010) https://doi.org/10.1116/1.3292647

Abstract

View articletitled, Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon

Open the PDF for in another window

High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high- $k$ layers

M. A. Reading; J. A. van den Berg; P. C. Zalm; D. G. Armour; P. Bailey; T. C. Q. Noakes; A. Parisini; T. Conard; S. De Gendt

J. Vac. Sci. Technol. B 28, C1C65–C1C70 (2010) https://doi.org/10.1116/1.3248264

Abstract

View articletitled, High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> layers

Open the PDF for in another window

Application of the Storing Matter technique to the analysis of semiconductor materials

C. Mansilla; T. Wirtz

J. Vac. Sci. Technol. B 28, C1C71–C1C76 (2010) https://doi.org/10.1116/1.3271256

Abstract

View articletitled, Application of the Storing Matter technique to the analysis of semiconductor materials

Open the PDF for in another window

Comparative study of native oxide impacts on low energy doping processes

Shu Qin; Allen McTeer; Kent Zhuang; Wendy Morinville; Shifeng Lu

J. Vac. Sci. Technol. B 28, C1C77–C1C83 (2010) https://doi.org/10.1116/1.3184522

Abstract

View articletitled, Comparative study of native oxide impacts on low energy doping processes

Open the PDF for in another window

Photovoltage versus microprobe sheet resistance measurements on ultrashallow structures

Trudo Clarysse; Alain Moussa; Brigitte Parmentier; Janusz Bogdanowicz; Wilfried Vandervorst; Hugo Bender; Markus Pfeffer; Martin Schellenberger; Peter F. Nielsen; Sune Thorsteinsson; Rong Lin; Dirch Petersen

J. Vac. Sci. Technol. B 28, C1C8–C1C14 (2010) https://doi.org/10.1116/1.3292637

Abstract

View articletitled, Photovoltage versus microprobe sheet resistance measurements on ultrashallow structures

Open the PDF for in another window

Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques

Damiano Giubertoni; Erica Iacob; P. Hoenicke; B. Beckhoff; Giancarlo Pepponi; Salvatore Gennaro; Massimo Bersani

J. Vac. Sci. Technol. B 28, C1C84–C1C89 (2010) https://doi.org/10.1116/1.3292638

Abstract

View articletitled, Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques

Open the PDF for in another window

2D Metrology

Plasma doping two-dimensional characterization using low energy x-ray emission spectroscopy and full wafer secondary ion mass spectrometry/angle-resolved x-ray electron spectroscopy techniques

Shu Qin; Wendy Morinville; Kent Zhuang; Francois Fabreguette; Allen McTeer; Y. Jeff Hu; Shifeng Lu

J. Vac. Sci. Technol. B 28, C1D1–C1D4 (2010) https://doi.org/10.1116/1.3273873

Abstract

View articletitled, Plasma doping two-dimensional characterization using low energy x-ray emission spectroscopy and full wafer secondary ion mass spectrometry/angle-resolved x-ray electron spectroscopy techniques

Open the PDF for in another window

Quantitative dopant profiling of $p - n$ junction in $In Ga As ∕ Al Ga As$ light-emitting diode using off-axis electron holography

Suk Chung; Shane R. Johnson; Ding Ding; Yong-Hang Zhang; David J. Smith; Martha R. McCartney

J. Vac. Sci. Technol. B 28, C1D11–C1D14 (2010) https://doi.org/10.1116/1.3244575

Abstract

View articletitled, Quantitative dopant profiling of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>-</mtext><mi>n</mi></mrow></math> junction in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> light-emitting diode using off-axis electron holography

Open the PDF for in another window

Electron holography for analysis of deep submicron devices: Present status and challenges

Nobuyuki Ikarashi; Akio Toda; Kazuya Uejima; Koichi Yako; Toyoji Yamamoto; Masami Hane; Hiroshi Sato

J. Vac. Sci. Technol. B 28, C1D5–C1D10 (2010) https://doi.org/10.1116/1.3207964

Abstract

View articletitled, Electron holography for analysis of deep submicron devices: Present status and challenges

Open the PDF for in another window

3D Metrology with Atom Probe

Dopant measurements in semiconductors with atom probe tomography

P. A. Ronsheim; M. Hatzistergos; S. Jin

J. Vac. Sci. Technol. B 28, C1E1–C1E4 (2010) https://doi.org/10.1116/1.3242422

Abstract

View articletitled, Dopant measurements in semiconductors with atom probe tomography

Open the PDF for in another window

Defects, Dopant Diffusion and Deactivation

Effect of $n$ - and $p$ -type dopants on patterned amorphous regrowth

S. Morarka; N. G. Rudawski; M. E. Law; K. S. Jones; R. G. Elliman

J. Vac. Sci. Technol. B 28, C1F1–C1F5 (2010) https://doi.org/10.1116/1.3207953

Abstract

View articletitled, Effect of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>- and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type dopants on patterned amorphous regrowth

Open the PDF for in another window

Modeling and Simulation

Fluorine clustering and diffusion in silicon: Ab initio calculations and kinetic Monte Carlo model

Kilian Vollenweider; Beat Sahli; Nikolas Zographos; Christoph Zechner

J. Vac. Sci. Technol. B 28, C1G1–C1G6 (2010) https://doi.org/10.1116/1.3253328

Abstract

View articletitled, Fluorine clustering and diffusion in silicon: Ab initio calculations and kinetic Monte Carlo model

Open the PDF for in another window

Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors

Stefan Flachowsky; Ralf Illgen; Tom Herrmann; Wilfried Klix; Roland Stenzel; Ina Ostermay; Andreas Naumann; Andy Wei; Jan Höntschel; Manfred Horstmann

J. Vac. Sci. Technol. B 28, C1G12–C1G17 (2010) https://doi.org/10.1116/1.3258631

Abstract

View articletitled, Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors

Open the PDF for in another window

Kinetic lattice Monte Carlo simulations of interdiffusion in strained silicon germanium alloys

Renyu Chen; Scott T. Dunham

J. Vac. Sci. Technol. B 28, C1G18–C1G23 (2010) https://doi.org/10.1116/1.3294704

Abstract

View articletitled, Kinetic lattice Monte Carlo simulations of interdiffusion in strained silicon germanium alloys

Open the PDF for in another window

Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies

Tom Herrmann; Stefan Flachowsky; Ralf Illgen; Wilfried Klix; Roland Stenzel; Jan Höntschel; Thomas Feudel; Manfred Horstmann

J. Vac. Sci. Technol. B 28, C1G7–C1G11 (2010) https://doi.org/10.1116/1.3292643

Abstract

View articletitled, Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies

Open the PDF for in another window

Metrology, Simulation and Integration of Non-Planar Devices

Exploring doping options and variability of trigate transistors using atomistic process and device simulations

Ignacio Martin-Bragado; Victor Moroz; Munkang Choi

J. Vac. Sci. Technol. B 28, C1H1–C1H4 (2010) https://doi.org/10.1116/1.3248263

Abstract

View articletitled, Exploring doping options and variability of trigate transistors using atomistic process and device simulations

Open the PDF for in another window

Experimental studies of dose retention and activation in fin field-effect-transistor-based structures

Jay Mody; Ray Duffy; Pierre Eyben; Jozefien Goossens; Alain Moussa; Wouter Polspoel; Bart Berghmans; M. J. H. van Dal; B. J. Pawlak; M. Kaiser; R. G. R. Weemaes; Wilfried Vandervorst

J. Vac. Sci. Technol. B 28, C1H5–C1H13 (2010) https://doi.org/10.1116/1.3269755

Abstract

View articletitled, Experimental studies of dose retention and activation in fin field-effect-transistor-based structures

Open the PDF for in another window

Silicides and Source/Drain Engineering

Interaction of NiSi with dopants for metallic source/drain applications

Jun Luo; Zhi-Jun Qiu; Zhen Zhang; Mikael Östling; Shi-Li Zhang

J. Vac. Sci. Technol. B 28, C1I1–C1I11 (2010) https://doi.org/10.1116/1.3248267

Abstract

View articletitled, Interaction of NiSi with dopants for metallic source/drain applications

Open the PDF for in another window

Effect of source/drain-extension dopant species on device performance of embedded SiGe strained $p$ -metal oxide semiconductor field effect transistors using millisecond annealing

Ralf Illgen; Stefan Flachowsky; Tom Herrmann; Wilfried Klix; Roland Stenzel; Thomas Feudel; Jan Höntschel; Manfred Horstmann

J. Vac. Sci. Technol. B 28, C1I12–C1I16 (2010) https://doi.org/10.1116/1.3244578

Abstract

View articletitled, Effect of source/drain-extension dopant species on device performance of embedded SiGe strained <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-metal oxide semiconductor field effect transistors using millisecond annealing

Open the PDF for in another window

Preface

Jerry Hunter; Michael Gribelyuk

J. Vac. Sci. Technol. B 28, C1a1 (2010) https://doi.org/10.1116/1.3290862

Extract

View articletitled, Preface

Open the PDF for in another window

Letters

Interdependence of optimum exposure dose regimes and the kinetics of resist dissolution for electron beam nanolithography of polymethylmethacrylate

M. A. Mohammad; T. Fito; J. Chen; M. Aktary; M. Stepanova; S. K. Dew

J. Vac. Sci. Technol. B 28, L1–L4 (2010) https://doi.org/10.1116/1.3268131

Abstract

View articletitled, Interdependence of optimum exposure dose regimes and the kinetics of resist dissolution for electron beam nanolithography of polymethylmethacrylate

Open the PDF for in another window

Chloride ion detection by InN gated $Al Ga N ∕ Ga N$ high electron mobility transistors

Byung-Hwan Chu; Hon-Way Lin; Shangjr Gwo; Yu-Lin Wang; S. J. Pearton; J. W. Johnson; P. Rajagopal; J. C. Roberts; E. L. Piner; K. J. Linthicuni; Fan Ren

J. Vac. Sci. Technol. B 28, L5–L8 (2010) https://doi.org/10.1116/1.3271253

Abstract

View articletitled, Chloride ion detection by InN gated <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> high electron mobility transistors

Open the PDF for in another window

Issues

Review Article

Regular Articles

Errata

International Workshop on Insight in Semiconductor Device Fabrication, Metrology, and Modeling (INSIGHT 2009)

Plenary Session

Advanced Anneals and Implant Technology

1-D Metrology

2D Metrology

3D Metrology with Atom Probe

Defects, Dopant Diffusion and Deactivation

Modeling and Simulation

Metrology, Simulation and Integration of Non-Planar Devices

Silicides and Source/Drain Engineering

Preface

Letters

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only