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September 2009

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

Articles

Impact of in situ ${SiN}_{x}$ layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures

E. Cho; S. Seo; C. Jin; D. Pavlidis; G. Fu; J. Tuerck; W. Jaegermann

J. Vac. Sci. Technol. B 27, 2079–2083 (2009) https://doi.org/10.1116/1.3186615

Abstract

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Analysis of thermally activated kinetics and uniformity of photoresist ashing process on 300 mm wafers

D. L. Mézerette; K. Tanimura; G. K. Vinogradov

J. Vac. Sci. Technol. B 27, 2084–2090 (2009) https://doi.org/10.1116/1.3186614

Abstract

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Effects of exposure time on defects and demolding force in soft ultraviolet nanoimprint lithography

Xiangdong Ye; Yucheng Ding; Yugang Duan; Hongzhong Liu; Bingheng Lu

J. Vac. Sci. Technol. B 27, 2091–2096 (2009) https://doi.org/10.1116/1.3186611

Abstract

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Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films

M. Mehta; M. Ruth; K. A. Piegdon; D. Krix; H. Nienhaus; C. Meier

J. Vac. Sci. Technol. B 27, 2097–2101 (2009) https://doi.org/10.1116/1.3186528

Abstract

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Enhancement of operation temperature of $In As ∕ Ga As$ quantum-dot infrared photodetectors with hydrogen-plasma treatment

Wei-Hsun Lin; Chi-Che Tseng; Kuang-Ping Chao; Shih-Yen Lin; Meng-Chyi Wu

J. Vac. Sci. Technol. B 27, 2102–2105 (2009) https://doi.org/10.1116/1.3196781

Abstract

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Growth scaling of metal oxide columnar thin films deposited by glancing angle depositions

M. T. Taschuk; K. M. Krause; J. J. Steele; M. A. Summers; M. J. Brett

J. Vac. Sci. Technol. B 27, 2106–2111 (2009) https://doi.org/10.1116/1.3196782

Abstract

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Effect of Ta buffer layer and thickness on the structural and magnetic properties of Co thin films

K. Vahaplar; S. Tari; H. Tokuc; S. Okur

J. Vac. Sci. Technol. B 27, 2112–2116 (2009) https://doi.org/10.1116/1.3196784

Abstract

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Mechanism of reducing line edge roughness in ArF photoresist by using $C F_{3} I$ plasma

Eiichi Soda; Seiichi Kondo; Shuichi Saito; Koji Koyama; Butsurin Jinnai; Seiji Samukawa

J. Vac. Sci. Technol. B 27, 2117–2123 (2009) https://doi.org/10.1116/1.3196785

Abstract

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Structural and electrical properties of metal contacts on $n$ -type ZnO thin film deposited by vacuum coating technique

C. Periasamy; P. Chakrabarti

J. Vac. Sci. Technol. B 27, 2124–2127 (2009) https://doi.org/10.1116/1.3196786

Abstract

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Transparent dual-gate InGaZnO thin film transistors: OR gate operation

Wantae Lim; E. A. Douglas; Jaewon Lee; Junghun Jang; V. Craciun; D. P. Norton; S. J. Pearton; F. Ren; S. Y. Son; J. H. Yuh; H. Shen; W. Chang

J. Vac. Sci. Technol. B 27, 2128–2131 (2009) https://doi.org/10.1116/1.3196787

Abstract

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Plasma treatment methods to improve indium bump bonding via indium oxide removal

Frank Greer; Matthew Dickie; R. P. Vasquez; Todd J. Jones; Michael E. Hoenk; Shouleh Nikzad

J. Vac. Sci. Technol. B 27, 2132–2137 (2009) https://doi.org/10.1116/1.3204991

Abstract

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Highly sensitive positive-working molecular resist based on new molecule

Shigeki Hattori; Arisa Yamada; Satoshi Saito; Koji Asakawa; Takeshi Koshiba; Tetsuro Nakasugi

J. Vac. Sci. Technol. B 27, 2138–2144 (2009) https://doi.org/10.1116/1.3204984

Abstract

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Pd/Ru/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

R. Dormaier; Q. Zhang; Y.-C. Chou; M. D. Lange; J. M. Yang; A. Oki; S. E. Mohney

J. Vac. Sci. Technol. B 27, 2145–2152 (2009) https://doi.org/10.1116/1.3204983

Abstract

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Controlled etching and regrowth of tunnel oxide for antenna-coupled metal-oxide-metal diodes

Badri Tiwari; Jeffrey A. Bean; Gergő Szakmány; Gary H. Bernstein; Patrick Fay; Wolfgang Porod

J. Vac. Sci. Technol. B 27, 2153–2160 (2009) https://doi.org/10.1116/1.3204979

Abstract

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Nonlinear large deflection of nanopillars fabricated by focused ion-beam induced chemical vapor deposition using double-cantilever testing

Hiro Tanaka; Masaki Shinkai; Yoji Shibutani; Yasuo Kogo

J. Vac. Sci. Technol. B 27, 2161–2165 (2009) https://doi.org/10.1116/1.3212912

Abstract

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Cu-plated through-wafer vias for $Al Ga N ∕ Ga N$ high electron mobility transistors on Si

K.-H. Chen; F. Ren; A. Pais; Huikai Xie; B. P. Gila; S. J. Pearton; J. W. Johnson; P. Rajagopal; J. C. Roberts; E. L. Piner; K. J. Linthicum

J. Vac. Sci. Technol. B 27, 2166–2169 (2009) https://doi.org/10.1116/1.3212931

Abstract

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Fabrication and optical properties of Ti-doped $W_{18} O_{49}$ nanorods using a modified plasma-arc gas-condensation technique

Cherng-Yuh Su; Hsuan-Ching Lin; Chung-Kwei Lin

J. Vac. Sci. Technol. B 27, 2170–2174 (2009) https://doi.org/10.1116/1.3208007

Abstract

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Effects of Si interlayer on resistance switching of $Pt / Si / {TiO}_{2} / Pt$ structures

Seunghee Go; Kyunghoon Jeong; Kwanwoo Lee; Ara Kim; Hyun Ruh; Chang Soo Kim; Jaegab Lee

J. Vac. Sci. Technol. B 27, 2175–2181 (2009) https://doi.org/10.1116/1.3207744

Abstract

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Novel heterostructure of CdS nanoparticle/ $W O_{3}$ nanowhisker: Synthesis and photocatalytic properties

Hyeyoung Kim; Youngjo Tak; Karuppanan Senthil; Jinmyoung Joo; Sangmin Jeon; Kijung Yong

J. Vac. Sci. Technol. B 27, 2182–2186 (2009) https://doi.org/10.1116/1.3212913

Abstract

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Evolution of surface morphology of dry-etched ZnO with ${Cl}_{2} / Ar$ plasma

Kuang-Po Hsueh; Ren-Jie Hou; Chun-Ju Tun

J. Vac. Sci. Technol. B 27, 2187–2191 (2009) https://doi.org/10.1116/1.3212914

Abstract

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Effect of liquid dispensing on flow field for immersion lithography

Wenyu Chen; Ying Chen; Jun Zou; Xin Fu; Huayong Yang; Xiaodong Ruan; Guofang Gong

J. Vac. Sci. Technol. B 27, 2192–2199 (2009) https://doi.org/10.1116/1.3212916

Abstract

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The effect of acid on superconformal filling in $100 nm$ trenches

Joshua W. Gallaway; Alan C. West

J. Vac. Sci. Technol. B 27, 2200–2205 (2009) https://doi.org/10.1116/1.3212933

Abstract

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Organopalladium catalyst on S-terminated $Ga As (001) - (2 \times 6)$ surface

Tomoya Konishi; Takashi Toujyou; Takuma Ishikawa; Gavin R. Bell; Shiro Tsukamoto

J. Vac. Sci. Technol. B 27, 2206–2208 (2009) https://doi.org/10.1116/1.3193687

Abstract

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Characterization of focused-ion-beam induced defect structures in graphite for the future guided self-assembly of molecules

Sarah E. O’Donnell; Petra Reinke

J. Vac. Sci. Technol. B 27, 2209–2216 (2009) https://doi.org/10.1116/1.3212935

Abstract

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Calculation of electron emission from a gated single nanowire

Da Lei; Weibiao Wang; Leyong Zeng; Jingqiu Liang

J. Vac. Sci. Technol. B 27, 2217–2221 (2009) https://doi.org/10.1116/1.3205005

Abstract

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Electrical characterization of thin InAs films grown on patterned $W ∕ Ga As$ substrates

Gvidas Astromskas; L. Reine Wallenberg; Lars-Erik Wernersson

J. Vac. Sci. Technol. B 27, 2222–2226 (2009) https://doi.org/10.1116/1.3222859

Abstract

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Comparison of conjugated polymer deposition techniques by photoluminescence spectroscopy

K. R. Lantz; R. Pate; A. D. Stiff-Roberts; A. G. Duffell; E. R. Smith; H. O. Everitt

J. Vac. Sci. Technol. B 27, 2227–2231 (2009) https://doi.org/10.1116/1.3222855

Abstract

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Oxygen effects on radiation hardness of ZnO thin films

Emre Gür; Hatice Asıl; Kübra Çınar; C. Coşkun; S. Tüzemen; Kadem Meral; Y. Onganer; Korkmaz Şerifoğlu

J. Vac. Sci. Technol. B 27, 2232–2237 (2009) https://doi.org/10.1116/1.3222865

Abstract

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Luminescence mechanisms in Si quantum dots- $Si N_{x}$ nanocomposite structures

Béchir Rezgui; Abel Sibai; Tetyana Nychyporuk; Mustapha Lemiti; Georges Brémond

J. Vac. Sci. Technol. B 27, 2238–2241 (2009) https://doi.org/10.1116/1.3225601

Abstract

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Surface plasmon resonance of gold nanoparticles formed by cathodic arc plasma ion implantation into polymer

F. S. Teixeira; M. C. Salvadori; Mauro Cattani; S. M. Carneiro; I. G. Brown

J. Vac. Sci. Technol. B 27, 2242–2247 (2009) https://doi.org/10.1116/1.3231449

Abstract

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Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor deposition

Yoshikazu Terai; Keisuke Yamaoka; Takashi Yamaguchi; Yasufumi Fujiwara

J. Vac. Sci. Technol. B 27, 2248–2251 (2009) https://doi.org/10.1116/1.3204981

Abstract

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Etch stop in via-hole etching on aluminum interconnection using inductively coupled $C_{2} F_{6}$ plasma with $O_{2}$ additive gas

Shin-ichi Imai; Nobuhiro Jiwari

J. Vac. Sci. Technol. B 27, 2252–2258 (2009) https://doi.org/10.1116/1.3225593

Abstract

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Nanoimprint mold fabrication and duplication for embedded servo and discrete track recording media

E. L. Tan; K. O. Aung; R. Sbiaa; S. K. Wong; H. K. Tan; W. C. Poh; S. N. Piramanayagam; C. C. Chum

J. Vac. Sci. Technol. B 27, 2259–2263 (2009) https://doi.org/10.1116/1.3225597

Abstract

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Uniformity conditioning of diamond field emitter arrays

J. D. Jarvis; H. L. Andrews; C. A. Brau; B. K. Choi; J. Davidson; W.-P. Kang; Y.-M. Wong

J. Vac. Sci. Technol. B 27, 2264–2269 (2009) https://doi.org/10.1116/1.3212915

Abstract

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Time-multiplexed, inductively coupled plasma process with separate ${SiCl}_{4}$ and $O_{2}$ steps for etching of GaAs with high selectivity

S. Golka; M. Arens; M. Reetz; T. Kwapien; S. Bouchoule; G. Patriarche

J. Vac. Sci. Technol. B 27, 2270–2279 (2009) https://doi.org/10.1116/1.3225599

Abstract

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Numerical approach for the theory of harmonic self-heating technique to measure thermophysical properties of suspended thin samples

Bo Feng; Zhixin Li; Xing Zhang; G. P. Peterson

J. Vac. Sci. Technol. B 27, 2280–2285 (2009) https://doi.org/10.1116/1.3225602

Abstract

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Film-thickness dependence of 10 GHz Nb coplanar-waveguide resonators

Kunihiro Inomata; Tsuyoshi Yamamoto; Michio Watanabe; Kazuaki Matsuba; Jaw-Shen Tsai

J. Vac. Sci. Technol. B 27, 2286–2291 (2009) https://doi.org/10.1116/1.3232301

Abstract

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Self-assembled monolayers of poly(ethylene glycol) siloxane as a resist for ultrahigh-resolution electron beam lithography on silicon oxide

Bo Gao; Gary H. Bernstein; Marya Lieberman

J. Vac. Sci. Technol. B 27, 2292–2300 (2009) https://doi.org/10.1116/1.3212899

Abstract

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Effect of etch-clean delay time on post-etch residue removal for front-end-of-line applications

Ingrid Vos; David Hellin; Guy Vereecke; Elizabeth Pavel; Werner Boullart; Johan Vertommen

J. Vac. Sci. Technol. B 27, 2301–2308 (2009) https://doi.org/10.1116/1.3225596

Abstract

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Diagnostics and modeling of ${CH}_{4} - {CO}_{2}$ plasmas for nanosmooth diamond deposition: Comparison to experimental data

T. Gries; L. Vandenbulcke; S. de Persis; O. Aubry; J. L. Delfau

J. Vac. Sci. Technol. B 27, 2309–2320 (2009) https://doi.org/10.1116/1.3231447

Abstract

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Brief Reports and Comments

Influence of room temperature control on atomic force microscope imaging

Joseph Fu; Chu Wei; Theodore Vorburger

J. Vac. Sci. Technol. B 27, 2321–2323 (2009) https://doi.org/10.1116/1.3207743

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Letters

Effect of sidewall passivation in $B {Cl}_{3} ∕ N_{2}$ inductively coupled plasma etching of two-dimensional GaAs photonic crystals

Kirill A. Atlasov; Pascal Gallo; Alok Rudra; Benjamin Dwir; Eli Kapon

J. Vac. Sci. Technol. B 27, L21–L24 (2009) https://doi.org/10.1116/1.3205004

Abstract

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Effects of ${Ga}^{+}$ milling on InGaAsP quantum well laser with mirrors milled by focused ion beam

F. Vallini; D. S. L. Figueira; P. F. Jarschel; L. A. M. Barea; A. A. G. Von Zuben; N. C. Frateschi

J. Vac. Sci. Technol. B 27, L25–L27 (2009) https://doi.org/10.1116/1.3207741

Abstract

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Analysis of dielectric constant of a self-forming barrier layer with Cu–Mn alloy on TEOS- $Si O_{2}$

S.-M. Chung; J. Koike

J. Vac. Sci. Technol. B 27, L28–L31 (2009) https://doi.org/10.1116/1.3224884

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