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Thermionic electron emission from chemical vapor deposition diamond by nanosecond laser heating

B. K. Choi; W. P. Kang; I. L. Davis; J. L. Davidson; S. T. Hu; R. W. Pitz

J. Vac. Sci. Technol. B 27, 557–561 (2009) https://doi.org/10.1116/1.3077486

Abstract

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Electron emission from ultralarge area metal-oxide-semiconductor electron emitters

Lasse B. Thomsen; Gunver Nielsen; Søren B. Vendelbo; Martin Johansson; Ole Hansen; Ib Chorkendorff

J. Vac. Sci. Technol. B 27, 562–567 (2009) https://doi.org/10.1116/1.3079649

Abstract

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Fabrication of annular photonic crystals by atomic layer deposition and sacrificial etching

Junbo Feng; Yao Chen; John Blair; Hamza Kurt; Ran Hao; D. S. Citrin; Christopher J. Summers; Zhiping Zhou

J. Vac. Sci. Technol. B 27, 568–572 (2009) https://doi.org/10.1116/1.3079662

Abstract

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Step and flash imprint lithography for manufacturing patterned media

Gerard M. Schmid; Mike Miller; Cynthia Brooks; Niyaz Khusnatdinov; Dwayne LaBrake; Douglas J. Resnick; S. V. Sreenivasan; Gene Gauzner; Kim Lee; David Kuo; Dieter Weller; XiaoMin Yang

J. Vac. Sci. Technol. B 27, 573–580 (2009) https://doi.org/10.1116/1.3081981

Abstract

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Improved etch resistance of ZEP 520A in reactive ion etching through heat and ultraviolet light treatment

David A. Czaplewski; David R. Tallant; Gary A. Patrizi; Joel R. Wendt; Bertha Montoya

J. Vac. Sci. Technol. B 27, 581–584 (2009) https://doi.org/10.1116/1.3086721

Abstract

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Dependence of fiber texture on composition in metal-insulator $Au - Si O_{2}$ composite thin films

D. I. Filoti; A. M. Brown; D. Carlson; J. M. E. Harper

J. Vac. Sci. Technol. B 27, 585–589 (2009) https://doi.org/10.1116/1.3086722

Abstract

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Impact of slip and contact angle on imprinting pressure in nanoimprint lithography

Young Hoon Lee; Hyo-Chol Sin; Nam Woong Kim

J. Vac. Sci. Technol. B 27, 590–596 (2009) https://doi.org/10.1116/1.3089324

Abstract

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Amorphization of Si using cluster ions

Lucia Romano; Kevin S. Jones; Karuppanan Sekar; Wade A. Krull

J. Vac. Sci. Technol. B 27, 597–600 (2009) https://doi.org/10.1116/1.3089372

Abstract

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Improved performance of pentacene field-effect transistors using a nanocomposite gate dielectric

Wen-Hsi Lee; C. C. Wang; J. C. Ho

J. Vac. Sci. Technol. B 27, 601–605 (2009) https://doi.org/10.1116/1.3093881

Abstract

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$Al Ga As ∕ Ga As$ high-electron mobility transistor with ${In}_{0.1} {Ga}_{0.9} As ∕ {In}_{0.22} {Ga}_{0.78} As ∕ {In}_{0.1} {Ga}_{0.9} As$ channel grown by metal-organic chemical vapor deposition

Yu-Shyan Lin; Bo-Yuan Chen

J. Vac. Sci. Technol. B 27, 606–611 (2009) https://doi.org/10.1116/1.3093883

Abstract

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Indium oxides by reactive ion beam assisted evaporation: From material study to device application

Kai Wang; Yuriy Vygranenko; Reza Chaji; Arokia Nathan

J. Vac. Sci. Technol. B 27, 612–617 (2009) https://doi.org/10.1116/1.3093887

Abstract

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Enhanced ultraviolet electroluminescence from $p - Si ∕ n - Zn O$ nanorod array heterojunction

Minghua Sun; Qi-Feng Zhang; Hui Sun; Junyan Zhang; Jin-Lei Wu

J. Vac. Sci. Technol. B 27, 618–621 (2009) https://doi.org/10.1116/1.3079657

Abstract

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Transfer characteristics and bias-stress stability of amorphous indium zinc oxide thin-film transistors

Jun Hyuk Choi; Un Bin Han; Ki Chang Lee; Joon-Hyung Lee; Jeong-Joo Kim; In-Tak Cho; Jong-Ho Lee; Young-Woo Heo

J. Vac. Sci. Technol. B 27, 622–625 (2009) https://doi.org/10.1116/1.3097852

Abstract

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Double layer-coated carbon nanotubes: Field emission and secondary-electron emission properties under presence of intense electric field

Jungwoo Lee; Jaehong Park; Kijo Sim; Whikun Yi

J. Vac. Sci. Technol. B 27, 626–630 (2009) https://doi.org/10.1116/1.3093886

Abstract

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Development of plasma-enhanced atomic layer deposition grown Ru–WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications

D. Greenslit; T. Chakraborty; E. Eisenbraun

J. Vac. Sci. Technol. B 27, 631–636 (2009) https://doi.org/10.1116/1.3097856

Abstract

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Passivation of GaAs by octadecanethiol self-assembled monolayers deposited from liquid and vapor phases

H. A. Budz; M. C. Biesinger; R. R. LaPierre

J. Vac. Sci. Technol. B 27, 637–648 (2009) https://doi.org/10.1116/1.3100266

Abstract

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Reduction effect of line edge roughness on time-dependent dielectric breakdown lifetime of Cu/low- $k$ interconnects by using $C F_{3} I$ etching

Eiichi Soda; Noriaki Oda; Sanae Ito; Seiichi Kondo; Shuichi Saito; Seiji Samukawa

J. Vac. Sci. Technol. B 27, 649–653 (2009) https://doi.org/10.1116/1.3100268

Abstract

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Quantification of outgassing of C-, Si-, and S-containing products during exposure of photoresists

F. A. Houle; N. Maxim; J. Huijbregtse; V. R. Deline; H. Truong; W. van Schaik

J. Vac. Sci. Technol. B 27, 654–664 (2009) https://doi.org/10.1116/1.3100269

Abstract

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Do not always blame the photons: Relationships between deprotection blur, line-edge roughness, and shot noise in extreme ultraviolet photoresists

Christopher N. Anderson; Patrick P. Naulleau

J. Vac. Sci. Technol. B 27, 665–670 (2009) https://doi.org/10.1116/1.3100270

Abstract

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Deposition of tungsten oxynitride nanowires through simple evaporation and subsequent annealing

Seongho Jeon; Hyeyoung Kim; Kijung Yong

J. Vac. Sci. Technol. B 27, 671–676 (2009) https://doi.org/10.1116/1.3100267

Abstract

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Brief Reports and Comments

Mesa sample preparation for secondary ion mass spectrometry depth profiling using an automated dicing saw

T. Guenther; Z. X. Jiang; K. Kim; D. D. Sieloff

J. Vac. Sci. Technol. B 27, 677–680 (2009) https://doi.org/10.1116/1.3079652

Abstract

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Dry etching of GaAs in high pressure, capacitively coupled $B {Cl}_{3} ∕ N_{2}$ plasmas

J. W. Lee; J. K. Kim; J. H. Lee; Y. W. Joo; Y. H. Park; H. S. Noh; S. J. Pearton

J. Vac. Sci. Technol. B 27, 681–683 (2009) https://doi.org/10.1116/1.3079665

Abstract

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PAPERS FROM THE 21ST INTERNATIONAL VACUUM NANOELECTRONIC CONFERENCE

Preface

Jan A. Dziuban

J. Vac. Sci. Technol. B 27, 686 (2009) https://doi.org/10.1116/1.3055280

Extract

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PAPERS FROM THE 21ST INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE

Theory and Simulation

Investigation of the $100 GHz$ reentrant linear magnetron using particle-in-cell simulation

Jung-Il Kim; Seok-Gy Jeon; Yun-Sik Jin; Geun-Ju Kim; Dae-Ho Kim; Sun-Shin Jung

J. Vac. Sci. Technol. B 27, 687–691 (2009) https://doi.org/10.1116/1.3072885

Abstract

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Theoretical analysis of the energy exchange and cooling in field emission from the conduction band of the $n$ -type semiconductor

M. S. Chung; Y. J. Jang; A. Mayer; B. L. Weiss; N. M. Miskovsky; P. H. Cutler

J. Vac. Sci. Technol. B 27, 692–697 (2009) https://doi.org/10.1116/1.3093897

Abstract

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PAPERS FROM THE 21st INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE

Characterization

Studies of W(100) modified by praseodymium oxide by using x-ray photoelectron spectroscopy, low-energy electron diffraction, and photoelectron emission microscopy

Takashi Kawakubo; Yusuke Nakano; Hideaki Nakane

J. Vac. Sci. Technol. B 27, 698–700 (2009) https://doi.org/10.1116/1.3070656

Abstract

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Emission and focusing characteristics of volcano-structured double-gated field emitter arrays

Yoichiro Neo; Masafumi Takeda; Takashi Soda; Masayoshi Nagao; Tomoya Yoshida; Seigo Kanemaru; Toshikatsu Sakai; Kei Hagiwara; Nobuo Saito; Toru Aoki; Hidenori Mimura

J. Vac. Sci. Technol. B 27, 701–704 (2009) https://doi.org/10.1116/1.3093891

Abstract

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Field emission microscopy study of zinc oxide nanowires on tungsten tip

Xianxiang Zhang; Gengmin Zhang; Xin Bai; Xingyu Zhao; Jing Xiao; Yue Wu; Fengyuan Lu; Dengzhu Guo

J. Vac. Sci. Technol. B 27, 705–710 (2009) https://doi.org/10.1116/1.3079650

Abstract

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Background analysis of field-induced electron emission from nanometer-scale heterostructured emitters

Valeriu Filip; Dan Nicolaescu; Ion Cosma Fulga; Tudor Mitran; Hei Wong

J. Vac. Sci. Technol. B 27, 711–718 (2009) https://doi.org/10.1116/1.3100657

Abstract

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Work function of W(100) field emitter modified with lutetium oxide and measured with photoemission electron microscope

Hideaki Nakane; Yusuke Nakano; Takashi Kawakubo

J. Vac. Sci. Technol. B 27, 719–720 (2009) https://doi.org/10.1116/1.3058726

Abstract

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Superposition of fringelike-electron-emission pattern from radical-oxygen-gas exposed Pt field emitter fabricated by electron-beam-induced deposition

K. Murakami; S. Nishihara; N. Matsubara; S. Ichikawa; F. Wakaya; M. Takai

J. Vac. Sci. Technol. B 27, 721–724 (2009) https://doi.org/10.1116/1.3079654

Abstract

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Arrays

CdTe x-ray image sensor using a field emitter array

Masashi Nakagawa; Yuichiro Hanawa; Takuya Sakata; Hisashi Morii; Masayoshi Nagao; Tomoya Yoshida; Seigo Kanemaru; Yoichiro Neo; Toru Aoki; Hidenori Mimura

J. Vac. Sci. Technol. B 27, 725–728 (2009) https://doi.org/10.1116/1.3079651

Abstract

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Simple fabrication of a gated field-electron emitter with a vertical thin film formed by ion-beam irradiation

T. Yoshida; M. Nagao; A. Baba; T. Asano; S. Kanemaru

J. Vac. Sci. Technol. B 27, 729–734 (2009) https://doi.org/10.1116/1.3100220

Abstract

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Enhanced output current density of an active-matrix high-efficiency electron emission device array with $13.75 μ m pixels$

Tomonari Nakada; Takanobu Sato; Yohei Matsuba; Ryota Tanaka; Kazuto Sakemura; Nobuyasu Negishi; Yoshiyuki Okuda; Atsushi Watanabe; Takamasa Yoshikawa; Kiyohide Ogasawara; Masakazu Nanba; Kenkichi Tanioka; Norifumi Egami; Nobuyoshi Koshida

J. Vac. Sci. Technol. B 27, 735–739 (2009) https://doi.org/10.1116/1.3079653

Abstract

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Design and fabrication of an ultrahigh-luminance field-emission display

M. Nagao; T. Yoshida; C. Yasumuro; K. Nakamura; Y. Marushima; M. Taniguchi; S. Itoh; S. Kanemaru

J. Vac. Sci. Technol. B 27, 740–743 (2009) https://doi.org/10.1116/1.3066759

Abstract

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Carbon Nanotubes

Stable electron emission from BCN/carbon nanotube field emitter

Chiharu Kimura; Satoshi Kawai; Katsuo Takizawa; Yuuichi Horikawa; Hidemitsu Aoki; Takashi Sugino

J. Vac. Sci. Technol. B 27, 744–748 (2009) https://doi.org/10.1116/1.3093893

Abstract

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Comparison of field-electron emission from different carbon nanotube array structures

Nguyen Tuan Hong; Ken Ha Koh; Soonil Lee; Phan Ngoc Minh; Ngo Thi Thanh Tam; Phan Hong Khoi

J. Vac. Sci. Technol. B 27, 749–752 (2009) https://doi.org/10.1116/1.3097850

Abstract

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Field-electron emission from flexible carbon nanotube array cathodes

Nguyen Tuan Hong; Kim Sang Yong; Ken Ha Koh; Soonil Lee; Ngo Thi Thanh Tam; Phan Ngoc Minh; Phan Hong Khoi

J. Vac. Sci. Technol. B 27, 753–756 (2009) https://doi.org/10.1116/1.3072831

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Field-emission light sources utilizing carbon nanotubes and composite phosphor made of $Si O_{2}$ nanospheres covered with $Y_{2} O_{3} : Eu$

Bartłomiej Cichy; Anna Górecka-Drzazga; Jan A. Dziuban

J. Vac. Sci. Technol. B 27, 757–760 (2009) https://doi.org/10.1116/1.3070654

Abstract

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Effect of aging on field emission lifetime for carbon nanotube cathodes

H. Oki; A. Kinoshita; T. Takikawa; W. S. Kim; K. Murakami; S. Abo; F. Wakaya; M. Takai

J. Vac. Sci. Technol. B 27, 761–765 (2009) https://doi.org/10.1116/1.3100222

Abstract

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Field emission pattern of carbon nanotubes and phase distribution of wave function in the end cap structure

J Peng; C. J. Edgcombe

J. Vac. Sci. Technol. B 27, 766–771 (2009) https://doi.org/10.1116/1.3058723

Abstract

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Novel Materials

Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode

Tsutomu Ichihara; Takashi Hatai; Nobuyoshi Koshida

J. Vac. Sci. Technol. B 27, 772–774 (2009) https://doi.org/10.1116/1.3070655

Abstract

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Field enhanced surface treatment of needle-shaped $Ti O_{2}$ cathode for improvement in field emission

C. Fukuyama; K. Murakami; S. Abo; F. Wakaya; M. Takai; T. Takimoto; Y. Kumashiro; Y. Takaoka

J. Vac. Sci. Technol. B 27, 775–777 (2009) https://doi.org/10.1116/1.3070652

Abstract

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2008 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY

Preface

Joseph A. Stroscio; Lloyd J. Whitman

J. Vac. Sci. Technol. B 27, 784 (2009) https://doi.org/10.1116/1.3054329

Extract

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Molecular and Nanoelectronics

Visualization of bias-dependent potential barriers using scanning gate microscopy in copper-phthalocyanine field-effect transistor

N. Aoki; K. Sudou; K. Matsusaki; Y. Ochiai

J. Vac. Sci. Technol. B 27, 785–788 (2009) https://doi.org/10.1116/1.3013853

Abstract

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Nanoscale current transport through Schottky contacts on wide bandgap semiconductors

F. Giannazzo; F. Roccaforte; F. Iucolano; V. Raineri; F. Ruffino; M. G. Grimaldi

J. Vac. Sci. Technol. B 27, 789–794 (2009) https://doi.org/10.1116/1.3043453

Abstract

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Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique

Takahiro Mori; Shunsuke Sato; Kazuo Omura; Shota Yajima; Yasuhiro Tsuruoka; Yohji Achiba; Koji Ishibashi

J. Vac. Sci. Technol. B 27, 795–798 (2009) https://doi.org/10.1116/1.3002388

Abstract

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Adsorption and conformation of porphyrins on metallic surfaces

Jens Brede; Mathieu Linares; Roy Lensen; Alan E. Rowan; Markus Funk; Martin Bröring; Germar Hoffmann; Roland Wiesendanger

J. Vac. Sci. Technol. B 27, 799–804 (2009) https://doi.org/10.1116/1.3010722

Abstract

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Control of channel resistance on metal nanowires by electromigration patterning method

Keisuke Takahashi; Yusuke Tomoda; Soichiro Itami; Jun-ichi Shirakashi

J. Vac. Sci. Technol. B 27, 805–809 (2009) https://doi.org/10.1116/1.3070651

Abstract

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First-principles calculation of electron transport in Si atom wire

Hiroyuki Kusaka; Nobuhiko Kobayashi

J. Vac. Sci. Technol. B 27, 810–812 (2009) https://doi.org/10.1116/1.3065484

Abstract

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Fabrication of nanogap electrodes by field-emission-induced electromigration

Yusuke Tomoda; Keisuke Takahashi; Michinobu Hanada; Watari Kume; Jun-ichi Shirakashi

J. Vac. Sci. Technol. B 27, 813–816 (2009) https://doi.org/10.1116/1.3039683

Abstract

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Molecular conductance switching via controlled alteration of electron delocalization: Quinone-modified oligo(phenylenevinylene)

S. Tsoi; I. Griva; S. A. Trammell; A. S. Blum; J. M. Schnur; N. Lebedev

J. Vac. Sci. Technol. B 27, 817–820 (2009) https://doi.org/10.1116/1.3056177

Abstract

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Toward surround gates on vertical single-walled carbon nanotube devices

Aaron D. Franklin; Robert A. Sayer; Timothy D. Sands; Timothy S. Fisher; David B. Janes

J. Vac. Sci. Technol. B 27, 821–826 (2009) https://doi.org/10.1116/1.3054266

Abstract

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Strain distributions in lattice-mismatched semiconductor core-shell nanowires

Niels Søndergaard; Yuhui He; Chun Fan; Ruqi Han; Thomas Guhr; H. Q. Xu

J. Vac. Sci. Technol. B 27, 827–830 (2009) https://doi.org/10.1116/1.3054200

Abstract

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Self-assembled organic nanowires: A structural and electronic study

Henje Simmonds; Neil Bennett; Martin Elliott; Emyr Macdonald

J. Vac. Sci. Technol. B 27, 831–835 (2009) https://doi.org/10.1116/1.3054198

Abstract

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Nanobiology, Nanomedicine, and Nanofluidics

Photoluminescence of bioconjugated core-shell $Cd Se ∕ Zn S$ quantum dots

T. V. Torchynska; J. Douda; P. A. Calva; S. S. Ostapenko; R. Peña Sierra

J. Vac. Sci. Technol. B 27, 836–838 (2009) https://doi.org/10.1116/1.3032904

Abstract

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Visualizing the surface structure of immunochromatography test strips using dynamic force microscopy

S. P. Yarkov; I. V. Shilenko; H. H. Valiev; Yu. N. Karnet; G. N. Kovalev; N. S. Snegireva; Yu. G. Yanovsky; E. V. Bogdanov

J. Vac. Sci. Technol. B 27, 839–841 (2009) https://doi.org/10.1116/1.3093911

Abstract

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$p H$ -dependent conductance behaviors of layer-by-layer self-assembled carboxylated carbon nanotube multilayer thin-film sensors

Dongjin Lee; Tianhong Cui

J. Vac. Sci. Technol. B 27, 842–848 (2009) https://doi.org/10.1116/1.3002386

Abstract

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Nanoscale Measurements of Novel Materials

X-ray diffraction and electron paramagnetic resonance study of porous $6 H -SiC$

T. V. Torchynska; V. Bratus; J. Palacios Gomez

J. Vac. Sci. Technol. B 27, 849–853 (2009) https://doi.org/10.1116/1.3043462

Abstract

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Diameter dependence of the interactions between single-walled carbon nanotubes and Ti(0001) surface

Melanie Yadao David; Koichiro Kasai; Hiroshi Nakanishi; Hideaki Kasai

J. Vac. Sci. Technol. B 27, 854–857 (2009) https://doi.org/10.1116/1.3093902

Abstract

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Soft processing for formation of self-assembled monolayer on hydrogen-terminated silicon surface based on visible-light excitation

Hikaru Sano; Tomohiro Yaku; Takashi Ichii; Kuniaki Murase; Hiroyuki Sugimura

J. Vac. Sci. Technol. B 27, 858–862 (2009) https://doi.org/10.1116/1.3065485

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Ordered structures of pentacene on Cu(110)

J. Martínez-Blanco; M. Ruiz-Osés; V. Joco; D. I. Sayago; P. Segovia; E. G. Michel

J. Vac. Sci. Technol. B 27, 863–867 (2009) https://doi.org/10.1116/1.3013855

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Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide

S. Sonde; F. Giannazzo; V. Raineri; E. Rimini

J. Vac. Sci. Technol. B 27, 868–873 (2009) https://doi.org/10.1116/1.3081890

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Nanostructure fabrication on an Al surface by chemical and electrochemical multiprocess and nanoscale molecular patterning on the nanostructured Al surface

Y. Watanabe; H. Kato; S. Takemura; S. Kusama; G. Iimura; T. Sugiyama; T. Hiramatsu; N. Nanba; O. Nishikawa; M. Taniguchi

J. Vac. Sci. Technol. B 27, 874–881 (2009) https://doi.org/10.1116/1.3098495

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Quantum electron transport through carbon nanotubes with electron-phonon coupling

Hiroyuki Ishii; Nobuhiko Kobayashi; Kenji Hirose

J. Vac. Sci. Technol. B 27, 882–886 (2009) https://doi.org/10.1116/1.3100658

Abstract

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Tunneling spectroscopy of ultrathin insulating ${Cu}_{2} N$ films, and single Co adatoms

T. Choi; C. D. Ruggiero; J. A. Gupta

J. Vac. Sci. Technol. B 27, 887–890 (2009) https://doi.org/10.1116/1.3010720

Abstract

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Low temperature scanning tunneling microscopy wave-function imaging of $In As ∕ Ga As$ cleaved quantum dots with similar height

J. C. Girard; A. Lemaître; A. Miard; C. David; Z. Z. Wang

J. Vac. Sci. Technol. B 27, 891–894 (2009) https://doi.org/10.1116/1.3013854

Abstract

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Spectroscopic scanning tunnel microscopy of $Cl - Si (111) 7 \times 7$ ⁠: Determination of Cl–Si $σ^{*}$ resonance line shape

Weiming Liu; Steven Horn; Pouya Maraghechi; S. N. Patitsas

J. Vac. Sci. Technol. B 27, 895–902 (2009) https://doi.org/10.1116/1.3066737

Abstract

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Topography and surface potential in Kelvin force microscopy of perfluoroalkyl alkanes self-assemblies

John Alexander; Sergei Magonov; Martin Moeller

J. Vac. Sci. Technol. B 27, 903–911 (2009) https://doi.org/10.1116/1.3079675

Abstract

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X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility

N. Hrauda; J. J. Zhang; J. Stangl; A. Rehman-Khan; G. Bauer; M. Stoffel; O. G. Schmidt; V. Jovanovich; L. K. Nanver

J. Vac. Sci. Technol. B 27, 912–918 (2009) https://doi.org/10.1116/1.3056178

Abstract

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Photoluminescence variation in dot-in-a-well structures with different InAs quantum dot densities

T. V. Torchynska; E. Velazquez Lozada; J. L. Casas Espinola

J. Vac. Sci. Technol. B 27, 919–922 (2009) https://doi.org/10.1116/1.3010718

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Nanosystems, Nanomechanics and Nano-optics

Fabrication of metallic nanoporous films by dealloying

W. J. Yeh; Shilpa Chava

J. Vac. Sci. Technol. B 27, 923–927 (2009) https://doi.org/10.1116/1.3032903

Abstract

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Scanning probe anodization patterning of Si substrates covered with a self-assembled monolayer dependent on surface hydrophilicity

Jiwon Han; Daiji Kasahara; Takashi Ichii; Kuniaki Murase; Hiroyuki Sugimura

J. Vac. Sci. Technol. B 27, 928–933 (2009) https://doi.org/10.1116/1.3043454

Abstract

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Direct-to-indirect transition observed in quantum dot photoluminescence with nanoprobe indentation

Kazunari Ozasa; Mizuo Maeda; Masahiko Hara; Hiroki Kakoi; Lixia Xu; Yuan-Hua Liang; Yoshio Arai

J. Vac. Sci. Technol. B 27, 934–938 (2009) https://doi.org/10.1116/1.3010731

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Incorporation of DNA networks into microelectrode structures

Christiane Erler; Michael Mertig

J. Vac. Sci. Technol. B 27, 939–943 (2009) https://doi.org/10.1116/1.3002385

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Scanning probe microscopy investigation of nanostructured surfaces induced by swift heavy ions

Sevilay Akcöltekin; Ender Akcöltekin; Marika Schleberger; Henning Lebius

J. Vac. Sci. Technol. B 27, 944–947 (2009) https://doi.org/10.1116/1.3054199

Abstract

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Improvement of scanning probe microscopy local oxidation nanolithography

Shinya Nishimura; Takashi Toyofuku; Kazuya Miyashita; Yasushi Takemura; Jun-ichi Shirakashi

J. Vac. Sci. Technol. B 27, 948–952 (2009) https://doi.org/10.1116/1.3093907

Abstract

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Nanoscale patterning of NiFe surface by scanning probe microscopy scratch nanolithography

Kazuya Miyashita; Shinya Nishimura; Takashi Toyofuku; Jun-ichi Shirakashi

J. Vac. Sci. Technol. B 27, 953–957 (2009) https://doi.org/10.1116/1.3077488

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Scanning Probe Microscopy and Instrumentation

Flexural-torsional resonance mode of a chip cantilever system: Applications to nanomachining

Felix Voigt; Florian Krohs; Ronny Gerbach

J. Vac. Sci. Technol. B 27, 958–963 (2009) https://doi.org/10.1116/1.3054265

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Photothermal excitation of a single-crystalline silicon cantilever for higher vibration modes in liquid

Shuhei Nishida; Dai Kobayashi; Hideki Kawakatsu; Yuki Nishimori

J. Vac. Sci. Technol. B 27, 964–968 (2009) https://doi.org/10.1116/1.3077487

Abstract

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Frequency dependent Kelvin probe force microscopy on silicon surfaces

F. Müller; A.-D. Müller

J. Vac. Sci. Technol. B 27, 969–974 (2009) https://doi.org/10.1116/1.3039682

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Wafer-scale production of carbon nanofiber probes

Masashi Kitazawa; Ryo Ohta; Yoshitaka Sugita; Kazuhisa Inaba; Masaki Tanemura

J. Vac. Sci. Technol. B 27, 975–979 (2009) https://doi.org/10.1116/1.3043464

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Application of ion-induced carbon nanocomposite fibers to magnetic force microscope probes

Yoshitaka Sugita; Masashi Kitazawa; M. Zamri M. Yusop; Masaki Tanemura; Yasuhiko Hayashi; Ryo Ohta

J. Vac. Sci. Technol. B 27, 980–983 (2009) https://doi.org/10.1116/1.3010730

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Parametrization of atomic force microscopy tip shape models for quantitative nanomechanical measurements

Sergey Belikov; Natalia Erina; Lin Huang; Chanmin Su; Craig Prater; Sergei Magonov; Valeriy Ginzburg; Bob McIntyre; Hamed Lakrout; Gregory Meyers

J. Vac. Sci. Technol. B 27, 984–992 (2009) https://doi.org/10.1116/1.3071852

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Calculation of plasmon enhanced molecular fluorescence in scanning tunnel microscopy using effective medium model for molecules on metal substrate

R. Nishitani; H. W. Liu; H. Iwasaki

J. Vac. Sci. Technol. B 27, 993–996 (2009) https://doi.org/10.1116/1.3066702

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Strain imaging of a magnetic layer formed on an air bearing surface of a hard disk drive head for perpendicular recording

Keiji Takata

J. Vac. Sci. Technol. B 27, 997–1000 (2009) https://doi.org/10.1116/1.3043457

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Noncontact lateral-force gradient measurement on $Si (111) - 7 \times 7$ surface with small-amplitude off-resonance atomic force microscopy

Mehrdad Atabak; Özhan Ünverdi; H. Özgür Özer; Ahmet Oral

J. Vac. Sci. Technol. B 27, 1001–1005 (2009) https://doi.org/10.1116/1.3097857

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Imaging capability of pseudomorphic high electron mobility transistors, $Al Ga N ∕ Ga N$ ⁠, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and $125 ° C$

R. Akram; M. Dede; A. Oral

J. Vac. Sci. Technol. B 27, 1006–1010 (2009) https://doi.org/10.1116/1.3056172

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Single ferroelectric domain nucleation and growth monitored by high speed piezoforce microscopy

Nicholas A. Polomoff; Ramesh Nath; James L. Bosse; Bryan D. Huey

J. Vac. Sci. Technol. B 27, 1011–1013 (2009) https://doi.org/10.1116/1.3077485

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Letters

High-aspect-ratio germanium zone plates fabricated by reactive ion etching in chlorine

Magnus Lindblom; Julia Reinspach; Olov von Hofsten; Michael Bertilson; Hans M. Hertz; Anders Holmberg

J. Vac. Sci. Technol. B 27, L1–L3 (2009) https://doi.org/10.1116/1.3089371

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PAPERS FROM THE 21ST INTERNATIONAL VACUUM NANOELECTRONIC CONFERENCE

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PAPERS FROM THE 21st INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE

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