Skip Nav Destination

Issues

Select Year

Issue

January 2009

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

Regular Articles

Thick membrane operated rf microelectromechanical system switch with low actuation voltage

Jongseok Kim; Sangwook Kwon; Youngtack Hong; Heemoon Jeong; Insang Song; Byeongkwon Ju

J. Vac. Sci. Technol. B 27, 1–5 (2009) https://doi.org/10.1116/1.3032916

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Deprotection blur in extreme ultraviolet photoresists: Influence of base loading and post-exposure bake temperature

Christopher N. Anderson; Patrick P. Naulleau

J. Vac. Sci. Technol. B 27, 6–10 (2009) https://doi.org/10.1116/1.3032901

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes

Jeffrey A. Bean; Badri Tiwari; Gary H. Bernstein; P. Fay; Wolfgang Porod

J. Vac. Sci. Technol. B 27, 11–14 (2009) https://doi.org/10.1116/1.3039684

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Development of a vacuum packaged nanodiamond lateral field emission device

K. Subramanian; R. Schroeder; W. P. Kang; J. L. Davidson

J. Vac. Sci. Technol. B 27, 15–18 (2009) https://doi.org/10.1116/1.3039686

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Duplication of nanoimprint templates by a novel SU-8/ ${SiO}_{2}$ /PMMA trilayer technique

Jing Wan; Zhen Shu; Shao-Ren Deng; Shen-Qi Xie; Bing-Rui Lu; Ran Liu; Yifang Chen; Xin-Ping Qu

J. Vac. Sci. Technol. B 27, 19–22 (2009) https://doi.org/10.1116/1.3039687

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

A silicon-germanium W-structure photodiode for near-infrared detection

Dyan Ali; Phillip Thompson; Joseph DiPasquale, III; Christopher J. K. Richardson

J. Vac. Sci. Technol. B 27, 23–27 (2009) https://doi.org/10.1116/1.3039688

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Lift-off and hybrid applications with ma-n 1405 negative-tone resist

A. Aassime; V. Mathet

J. Vac. Sci. Technol. B 27, 28–32 (2009) https://doi.org/10.1116/1.3039689

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Dependence of etch rates of silicon substrates on the use of $C_{4} F_{8}$ and $C_{4} F_{6}$ plasmas in the deposition step of the Bosch process

Hyongmoo Rhee; Hae Min Lee; Yun Mi Namkoung; Chang-Koo Kim; Heeyeop Chae; Yil Wook Kim

J. Vac. Sci. Technol. B 27, 33–40 (2009) https://doi.org/10.1116/1.3039690

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Field-emission properties of carbon nanotubes grown using Cu–Cr catalysts

Zhejuan Zhang; Daniel H. C. Chua; Yang Gao; Yanping Zhang; Zhe Tang; Beng Kang Tay; Tao Feng; Zhuo Sun; Yiwei Chen

J. Vac. Sci. Technol. B 27, 41–46 (2009) https://doi.org/10.1116/1.3039691

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Detailed characterization of hydrogen silsesquioxane for e-beam applications in a dynamic random access memory pilot line environment

K. Keil; K.-H. Choi; C. Hohle; J. Kretz; L. Szikszai; J.-W. Bartha

J. Vac. Sci. Technol. B 27, 47–51 (2009) https://doi.org/10.1116/1.3039692

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Some peculiarities of resist-profile simulation for positive-tone chemically amplified resists in electron-beam lithography

K. Vutova; E. Koleva; G. Mladenov; I. Kostic

J. Vac. Sci. Technol. B 27, 52–57 (2009) https://doi.org/10.1116/1.3043467

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Absorber stack with transparent conductive oxide layer for extreme ultraviolet lithography

Hee Young Kang; Chang Kwon Hwangbo

J. Vac. Sci. Technol. B 27, 58–60 (2009) https://doi.org/10.1116/1.3043471

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Fabrication of nanoscale bioarrays for the study of cytoskeletal protein binding interactions using nanoimprint lithography

M. Schvartzman; K. Nguyen; M. Palma; J. Abramson; J. Sable; J. Hone; M. P. Sheetz; S. J. Wind

J. Vac. Sci. Technol. B 27, 61–65 (2009) https://doi.org/10.1116/1.3043472

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Latest results from the SEMATECH Berkeley extreme ultraviolet microfield exposure tool

Patrick P. Naulleau; Christopher N. Anderson; Jerrin Chiu; Kim Dean; Paul Denham; Simi George; Kenneth A. Goldberg; Brian Hoef; Gideon Jones; Chawon Koh; Bruno La Fontaine; Andy Ma; Warren Montgomery; Dimitra Niakoula; Joo-on Park; Tom Wallow; Stefan Wurm

J. Vac. Sci. Technol. B 27, 66–70 (2009) https://doi.org/10.1116/1.3043473

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Study of interface degradation of Hf-silicate gate dielectrics during thermal nitridation process

S. Y. Son; J. H. Jang; P. Kumar; R. K. Singh; J. H. Yuh; H. Cho; C. J. Kang

J. Vac. Sci. Technol. B 27, 71–75 (2009) https://doi.org/10.1116/1.3043536

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Self-assembly solder process to form three-dimensional structures on silicon

M. Rao; J. C. Lusth; S. L. Burkett

J. Vac. Sci. Technol. B 27, 76–80 (2009) https://doi.org/10.1116/1.3043538

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

${Ti}_{0.94} {Fe}_{0.06} O_{2} ∕ {Ti}_{0.94} {Mn}_{0.06} O_{2}$ superlattice films deposited on atomic-scale flattened sapphire substrates for dilute magnetic semiconductor applications

Nak-Jin Seong; Juan Jiang; Soon-Gil Yoon

J. Vac. Sci. Technol. B 27, 81–84 (2009) https://doi.org/10.1116/1.3049480

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Forbidden pitch improvement using modified illumination in lithography

M. L. Ling; C. J. Tay; C. Quan; G. S. Chua; Q. Lin

J. Vac. Sci. Technol. B 27, 85–91 (2009) https://doi.org/10.1116/1.3054286

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Plasma-surface interactions of advanced photoresists with $C_{4} F_{8} ∕ Ar$ discharges: Plasma parameter dependencies

S. Engelmann; R. L. Bruce; M. Sumiya; T. Kwon; R. Phaneuf; G. S. Oehrlein; C. Andes; D. Graves; D. Nest; E. A. Hudson

J. Vac. Sci. Technol. B 27, 92–106 (2009) https://doi.org/10.1116/1.3054342

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Band bending and adsorption/desorption kinetics on N-polar GaN surfaces

Soojeong Choi; Tong-Ho Kim; Pae Wu; April Brown; Henry O. Everitt; Maria Losurdo; Giovanni Bruno

J. Vac. Sci. Technol. B 27, 107–112 (2009) https://doi.org/10.1116/1.3054345

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Plasma reactor dry cleaning strategy after TaC, MoN, WSi, W, and WN etching processes

R. Ramos; G. Cunge; O. Joubert; T. Lill

J. Vac. Sci. Technol. B 27, 113–121 (2009) https://doi.org/10.1116/1.3058710

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Transformation of polycrystalline tungsten to monocrystalline tungsten W(100) and its potential application in Schottky emitters

A. K. Dokania; Ruud Hendrikx; P. Kruit

J. Vac. Sci. Technol. B 27, 122–125 (2009) https://doi.org/10.1116/1.3058713

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Interface dependent electrical properties of amorphous $In Ga Zn O_{4}$ thin film transistors

Wantae Lim; Jung Hun Jang; S.-H. Kim; D. P. Norton; V. Craciun; S. J. Pearton; F. Ren; H. Chen

J. Vac. Sci. Technol. B 27, 126–129 (2009) https://doi.org/10.1116/1.3058717

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor

Chao-Ching Cheng; Chao-Hsin Chien; Guang-Li Luo; Jun-Cheng Liu; Yi-Cheng Chen; Yao-Feng Chang; Shin-Yuan Wang; Chi-Chung Kei; Chien-Nan Hsiao; Chun-Yen Chang

J. Vac. Sci. Technol. B 27, 130–133 (2009) https://doi.org/10.1116/1.3058724

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Metal nanowire fabrication by force microscopy lithography using amorphous arsenic sulfide resist layer

H. D. Fonseca Filho; R. Prioli; M. H. P. Maurício

J. Vac. Sci. Technol. B 27, 134–138 (2009) https://doi.org/10.1116/1.3058722

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electron optics of skewed micro-Einzel lenses

M. J. van Bruggen; B. van Someren; P. Kruit

J. Vac. Sci. Technol. B 27, 139–147 (2009) https://doi.org/10.1116/1.3071850

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Synthesis, structural and magnetic properties of epitaxial $Mg {Fe}_{2} O_{4}$ thin films by molecular beam epitaxy

J. Cheng; V. K. Lazarov; G. E. Sterbinsky; B. W. Wessels

J. Vac. Sci. Technol. B 27, 148–151 (2009) https://doi.org/10.1116/1.3054339

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Near field emission scanning electron microscopy

T. L. Kirk; U. Ramsperger; D. Pescia

J. Vac. Sci. Technol. B 27, 152–155 (2009) https://doi.org/10.1116/1.3071849

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

$Si O_{x}$ -planarized and transistor outlook-packaged oxide-confined vertical-cavity surface-emitting lasers with ring-shape geometry for high-speed $(10 Gb ∕ s)$ operation

Chia-Lung Tsai; Jia-Qing Lin; Feng-Ming Lee; Yi-Lun Chou; Meng-Chyi Wu

J. Vac. Sci. Technol. B 27, 156–160 (2009) https://doi.org/10.1116/1.3072514

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

REBL: A novel approach to high speed maskless electron beam direct write lithography

Paul Petric; Chris Bevis; Allen Carroll; Henry Percy; Marek Zywno; Keith Standiford; Alan Brodie; Noah Bareket; Luca Grella

J. Vac. Sci. Technol. B 27, 161–166 (2009) https://doi.org/10.1116/1.3054281

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Mitigation of microloading effect in nanoimprint mask fabrication

Raghunath Murali

J. Vac. Sci. Technol. B 27, 167–168 (2009) https://doi.org/10.1116/1.3070649

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Computational and experimental studies of phase separation in $pentacene : C_{60}$ mixtures

Ying Zheng; Sharon K. Pregler; Jason D. Myers; Jiaomin Ouyang; Susan B. Sinnott; Jiangeng Xue

J. Vac. Sci. Technol. B 27, 169–179 (2009) https://doi.org/10.1116/1.3072516

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Stable tungsten disilicide contacts for surface and thin film resistivity measurements

G. Jnawali; F.-J. Meyer zu Heringdorf; D. Wall; S. Sindermann; M. Horn-von Hoegen

J. Vac. Sci. Technol. B 27, 180–183 (2009) https://doi.org/10.1116/1.3071851

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

DNA directed assembly of nanoparticle linear structure for nanophotonics

Baoquan Ding; Stefano Cabrini; Ronald N. Zuckermann; Jeffrey Bokor

J. Vac. Sci. Technol. B 27, 184–187 (2009) https://doi.org/10.1116/1.3072515

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning

Hyo-Sung Lee; Jung-Sub Wi; Sung-Wook Nam; Hyun-Mi Kim; Ki-Bum Kim

J. Vac. Sci. Technol. B 27, 188–192 (2009) https://doi.org/10.1116/1.3049482

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Brief Reports and Comments

Electrical properties of nanotip-assisted microplasma devices

Sung-O. Kim; Yang-Suk Ko; Hal-Bon Gu

J. Vac. Sci. Technol. B 27, 193–197 (2009) https://doi.org/10.1116/1.3043534

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Errata

Erratum: “Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies” [J. Vac. Sci. Technol. B 26, L33 (2008)]

Shriram Ramanathan; Annamalai Karthikeyan; S. A. Govindarajan; Paul D. Kirsh

J. Vac. Sci. Technol. B 27, 198 (2009) https://doi.org/10.1116/1.3054289

Extract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Erratum: “Thermal conductivity of B–C–N and BN nanotubes” [J. Vac. Sci. Technol. B 23, 1883 (2005)]

C. W. Chang; W. Q. Han; Alex Zettl

J. Vac. Sci. Technol. B 27, 199 (2009) https://doi.org/10.1116/1.3058746

Extract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

PAPERS FROM THE 15TH WORKSHOP ON DIELECTRICS IN MICROELECTRONICS

Alternative high- $k$ dielectrics for semiconductor applications

J. Vac. Sci. Technol. B 27, 209–213 (2009) https://doi.org/10.1116/1.3025855

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain

Fei Gao; S. J. Lee; D. L. Kwong

J. Vac. Sci. Technol. B 27, 214–217 (2009) https://doi.org/10.1116/1.3025909

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

$In Al N ∕ Ga N$ metal-oxide-semiconductor high electron mobility transistor with ${Al}_{2} O_{3}$ insulating films grown by metal organic chemical vapor deposition using Ar and $N H_{3}$ carrier gases

K. Čičo; J. Kuzmík; J. Liday; K. Hušeková; G. Pozzovivo; J.-F. Carlin; N. Grandjean; D. Pogany; P. Vogrinčič; K. Fröhlich

J. Vac. Sci. Technol. B 27, 218–222 (2009) https://doi.org/10.1116/1.3021034

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure

M. Matsumoto; Y. Inayoshi; S. Murashige; M. Suemitsu; S. Nakajima; T. Uehara; Y. Toyoshima

J. Vac. Sci. Technol. B 27, 223–225 (2009) https://doi.org/10.1116/1.3021039

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Behavior of zirconium oxide films processed from novel monocyclopentadienyl precursors by atomic layer deposition

Kaupo Kukli; Jaakko Niinistö; Aile Tamm; Mikko Ritala; Markku Leskelä

J. Vac. Sci. Technol. B 27, 226–229 (2009) https://doi.org/10.1116/1.3071844

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effect of annealing and electrical properties of high- $κ$ thin films grown by atomic layer deposition using carboxylic acids as oxygen source

E. Rauwel; F. Ducroquet; P. Rauwel; M.-G. Willinger; I. Matko; N. Pinna

J. Vac. Sci. Technol. B 27, 230–235 (2009) https://doi.org/10.1116/1.3058743

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Study of metal oxide-semiconductor capacitors with rf magnetron sputtering $Ti O_{x}$ and $Ti O_{x} N_{y}$ gate dielectric layer

K. F. Albertin; I. Pereyra

J. Vac. Sci. Technol. B 27, 236–245 (2009) https://doi.org/10.1116/1.3043537

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Metal-oxide-semiconductor devices on $p$ -type Ge with ${La}_{2} O_{3}$ and ${ZrO}_{2} / {La}_{2} O_{3}$ as gate dielectric and the effect of postmetallization anneal

S. F. Galata; G. Mavrou; P. Tsipas; A. Sotiropoulos; Y. Panayiotatos; A. Dimoulas

J. Vac. Sci. Technol. B 27, 246–248 (2009) https://doi.org/10.1116/1.3043533

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Gd silicate: A high- $k$ dielectric compatible with high temperature annealing

H. D. B. Gottlob; A. Stefani; M. Schmidt; M. C. Lemme; H. Kurz; I. Z. Mitrovic; M. Werner; W. M. Davey; S. Hall; P. R. Chalker; K. Cherkaoui; P. K. Hurley; J. Piscator; O. Engström; S. B. Newcomb

J. Vac. Sci. Technol. B 27, 249–252 (2009) https://doi.org/10.1116/1.3025904

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Optimization of the AlON buffer layer for ${Pr}_{X} O_{Y} / Si$ stacks

K. Henkel; Y. Burkov; K. Karavaev; M. Torche; C. Schwiertz; D. Schmeißer

J. Vac. Sci. Technol. B 27, 253–257 (2009) https://doi.org/10.1116/1.3025905

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Complementary metal oxide semiconductor integration of epitaxial ${Gd}_{2} O_{3}$

M. C. Lemme; H. D. B. Gottlob; T. J. Echtermeyer; M. Schmidt; H. Kurz; R. Endres; U. Schwalke; M. Czernohorkky; D. Tetzlaff; H. J. Osten

J. Vac. Sci. Technol. B 27, 258–261 (2009) https://doi.org/10.1116/1.3054350

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Structure dependence of epitaxial $\Pr_{2} O_{3} ∕ Si (001)$ on oxygen pressure during growth

Tatsuro Watahiki; Wolfgang Braun; Henning Riechert

J. Vac. Sci. Technol. B 27, 262–265 (2009) https://doi.org/10.1116/1.3021028

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Epitaxial growth of high- $κ$ $Ti O_{2}$ rutile films on $Ru O_{2}$ electrodes

K. Fröhlich; J. Aarik; M. Ťapajna; A. Rosová; A. Aidla; E. Dobročka; K. Hušková

J. Vac. Sci. Technol. B 27, 266–270 (2009) https://doi.org/10.1116/1.3021030

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)

O. Seifarth; J. Dabrowski; P. Zaumseil; S. Müller; D. Schmeißer; H.-J. Müssig; T. Schroeder

J. Vac. Sci. Technol. B 27, 271–276 (2009) https://doi.org/10.1116/1.3021047

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Band offsets and work function control in field effect transistors

John Robertson

J. Vac. Sci. Technol. B 27, 277–285 (2009) https://doi.org/10.1116/1.3072517

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Influence of the electrode material on $Hf O_{2}$ metal-insulator-metal capacitors

Ch. Wenger; M. Lukosius; H.-J. Müssig; G. Ruhl; S. Pasko; Ch. Lohe

J. Vac. Sci. Technol. B 27, 286–289 (2009) https://doi.org/10.1116/1.3071843

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks

A. Fet; V. Häublein; A. J. Bauer; H. Ryssel

J. Vac. Sci. Technol. B 27, 290–293 (2009) https://doi.org/10.1116/1.3021043

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high- $K$ dielectrics

G. Lucovsky; J. P. Long; K.-B. Chung; H. Seo; B. Watts; R. Vasic; M. D. Ulrich

J. Vac. Sci. Technol. B 27, 294–299 (2009) https://doi.org/10.1116/1.3072917

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

$Hf O_{2} ∕ Si$ interface formation in atomic layer deposition films: An in situ investigation

Massimo Tallarida; Konstantin Karavaev; Dieter Schmeisser

J. Vac. Sci. Technol. B 27, 300–304 (2009) https://doi.org/10.1116/1.3021023

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Structure and defects of epitaxial Si(111) layers on $Y_{2} O_{3} (111) / Si (111)$ support systems

C. Borschel; C. Ronning; H. Hofsäss; A. Giussani; P. Zaumseil; Ch. Wenger; P. Storck; T. Schroeder

J. Vac. Sci. Technol. B 27, 305–309 (2009) https://doi.org/10.1116/1.3043540

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Identification of interfacial defects in high- $k$ gate stack films by spectroscopic ellipsometry

J. Price; G. Bersuker; P. S. Lysaght

J. Vac. Sci. Technol. B 27, 310–312 (2009) https://doi.org/10.1116/1.3021045

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Influence of $Ar ∕ O_{2}$ ratio on the electrical properties of metal-ferroelectric $(Bi Fe O_{3})$ -insulator $(Hf O_{2})$ -semiconductor capacitors fabricated by rf magnetron sputtering

Trevor Pi-Chun Juan; Jong-Hong Lu; Ming-Wei Lu

J. Vac. Sci. Technol. B 27, 313–316 (2009) https://doi.org/10.1116/1.3021025

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electron paramagnetic resonance characterization of defects in $Hf O_{2}$ and $Zr O_{2}$ powders and films

R. C. Barklie; Sandra Wright

J. Vac. Sci. Technol. B 27, 317–320 (2009) https://doi.org/10.1116/1.3025882

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Trap related dielectric absorption of HfSiO films in metal-insulator-semiconductor structures

M. Kerber; C. Fachmann; J. Heitmann; S. Kudelka; U. Schröder; H. Reisinger

J. Vac. Sci. Technol. B 27, 321–324 (2009) https://doi.org/10.1116/1.3043532

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies

E. Hildebrandt; J. Kurian; J. Zimmermann; A. Fleissner; H. von Seggern; L. Alff

J. Vac. Sci. Technol. B 27, 325–328 (2009) https://doi.org/10.1116/1.3043474

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Spatial distribution of electrically active defects in dual-layer $(Si O_{2} ∕ Hf O_{2})$ gate dielectric $n$ -type metal oxide semiconductor field effect transistors

T. Nguyen; A. Savio; L. Militaru; C. Plossu

J. Vac. Sci. Technol. B 27, 329–332 (2009) https://doi.org/10.1116/1.3025824

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Frequency dispersion and dielectric relaxation of ${La}_{2} {Hf}_{2} O_{7}$

C. Z. Zhao; S. Taylor; M. Werner; P. R. Chalker; J. M. Gaskell; A. C. Jones

J. Vac. Sci. Technol. B 27, 333–337 (2009) https://doi.org/10.1116/1.3043535

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Analytical modeling of tunneling current through $Si O_{2} - Hf O_{2}$ stacks in metal oxide semiconductor structures

J. Coignus; R. Clerc; C. Leroux; G. Reimbold; G. Ghibaudo; F. Boulanger

J. Vac. Sci. Technol. B 27, 338–345 (2009) https://doi.org/10.1116/1.3043539

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Analytical modeling of the tunneling probability through the double-layer gate stacks

B. Majkusiak

J. Vac. Sci. Technol. B 27, 346–351 (2009) https://doi.org/10.1116/1.3021042

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Leakage current effects on $C - V$ plots of high- $k$ metal-oxide-semiconductor capacitors

Y. Lu; S. Hall; L. Z. Tan; I. Z. Mitrovic; W. M. Davey; B. Raeissi; O. Engström; K. Cherkaoui; S. Monaghan; P. K. Hurley; H. D. B. Gottlob; M. C. Lemme

J. Vac. Sci. Technol. B 27, 352–355 (2009) https://doi.org/10.1116/1.3025910

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high- $k$ capacitors

W. Polspoel; W. Vandervorst; L. Aguilera; M. Porti; M. Nafria; X. Aymerich

J. Vac. Sci. Technol. B 27, 356–359 (2009) https://doi.org/10.1116/1.3071845

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Development of a conductive atomic force microscope with a logarithmic current-to-voltage converter for the study of metal oxide semiconductor gate dielectrics reliability

L. Aguilera; M. Lanza; A. Bayerl; M. Porti; M. Nafria; X. Aymerich

J. Vac. Sci. Technol. B 27, 360–363 (2009) https://doi.org/10.1116/1.3021049

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Correlation of microscopic and macroscopic electrical characteristics of high- $k$ $Zr {Si}_{x} O_{2 - x}$ thin films using tunneling atomic force microscopy

W. Weinreich; L. Wilde; P. Kücher; M. Lemberger; V. Yanev; M. Rommel; A. J. Bauer; E. Erben; J. Heitmann; U. Schröder; L. Oberbeck

J. Vac. Sci. Technol. B 27, 364–368 (2009) https://doi.org/10.1116/1.3058725

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electrical characteristics of metal-ferroelectric $(Bi Fe O_{3})$ -insulator $(Y_{2} O_{3})$ -semiconductor capacitors and field-effect transistors

Chih-Ming Lin; Wen-chieh Shih; Joseph Ya-min Lee

J. Vac. Sci. Technol. B 27, 369–372 (2009) https://doi.org/10.1116/1.3058727

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electrical properties of amorphous barium titanate films sputter deposited under hydrogen containing atmosphere

F. El Kamel; P. Gonon; A. Sylvestre; C. Vallée

J. Vac. Sci. Technol. B 27, 373–377 (2009) https://doi.org/10.1116/1.3025902

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Physicochemical and electrical characterizations of atomic layer deposition grown ${HfO}_{2}$ on TiN and Pt for metal-insulator-metal application

C. Jorel; C. Vallée; E. Gourvest; B. Pelissier; M. Kahn; M. Bonvalot; P. Gonon

J. Vac. Sci. Technol. B 27, 378–383 (2009) https://doi.org/10.1116/1.3021036

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Impact of a $γ {-Al}_{2} O_{3} (001)$ barrier on ${LaAlO}_{3}$ metal-oxide-semiconductor capacitor electrical properties

L. Becerra; C. Merckling; M. El-Kazzi; N. Baboux; B. Vilquin; G. Saint-Girons; C. Plossu; G. Hollinger

J. Vac. Sci. Technol. B 27, 384–388 (2009) https://doi.org/10.1116/1.3065437

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electrical properties of thin zirconium and hafnium oxide high- $k$ gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

S. Dueñas; H. Castán; H. Garcia; A. Gómez; L. Bailón; K. Kukli; J. Niinistö; M. Ritala; M. Leskelä

J. Vac. Sci. Technol. B 27, 389–393 (2009) https://doi.org/10.1116/1.3025865

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Different mechanism to explain the $1 ∕ f$ noise in $n$ - and $p$ -SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers

Philippe Gaubert; Akinobu Teramoto; Weitao Cheng; Tatsufumi Hamada; Tadahiro Ohmi

J. Vac. Sci. Technol. B 27, 394–401 (2009) https://doi.org/10.1116/1.3054280

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Low frequency noise analysis in $Hf O_{2} ∕ Si O_{2}$ gate oxide fully depleted silicon on insulator transistors

L. Zafari; J. Jomaah; G. Ghibaudo; O. Faynot

J. Vac. Sci. Technol. B 27, 402–405 (2009) https://doi.org/10.1116/1.3072518

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Radiation damage on dielectrics: Single event effects

Alessandro Paccagnella; Simone Gerardin; Giorgio Cellere

J. Vac. Sci. Technol. B 27, 406–410 (2009) https://doi.org/10.1116/1.3054271

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

High- $k$ materials and their response to gamma ray radiation

C. Z. Zhao; S. Taylor; M. Werner; P. R. Chalker; R. J. Potter; J. M. Gaskell; A. C. Jones

J. Vac. Sci. Technol. B 27, 411–415 (2009) https://doi.org/10.1116/1.3071848

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics

H. García; S. Dueñas; H. Castán; A. Gómez; L. Bailón; R. Barquero; K. Kukli; M. Ritala; M. Leskelä

J. Vac. Sci. Technol. B 27, 416–420 (2009) https://doi.org/10.1116/1.3021040

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Implanted and irradiated $Si O_{2} ∕ Si$ structure electrical properties at the nanoscale

M. Porti; N. Nafria; S. Gerardin; X. Aymerich; A. Cester; A. Paccagnella; G. Ghidini

J. Vac. Sci. Technol. B 27, 421–425 (2009) https://doi.org/10.1116/1.3043475

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Review on the reliability characterization of plasma-induced damage

Andreas Martin

J. Vac. Sci. Technol. B 27, 426–434 (2009) https://doi.org/10.1116/1.3054356

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Stress-induced leakage current and random telegraph signal

Akinobu Teramoto; Yuki Kumagai; Kenichi Abe; Takafumi Fujisawa; Shunichi Watabe; Tomoyuki Suwa; Naoto Miyamoto; Shigetoshi Sugawa; Tadahiro Ohmi

J. Vac. Sci. Technol. B 27, 435–438 (2009) https://doi.org/10.1116/1.3054269

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Investigation of voltage dependent relaxation, charge trapping, and stress induced leakage current effects in $Hf O_{2} ∕ {Dy}_{2} O_{3}$ gate stacks grown on Ge (100) substrates

M. S. Rahman; E. K. Evangelou; I. I. Androulidakis; A. Dimoulas; G. Mavrou; P. Tsipas

J. Vac. Sci. Technol. B 27, 439–442 (2009) https://doi.org/10.1116/1.3025912

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Breakdown and degradation of ultrathin Hf-based ${(Hf O_{2})}_{x} {(Si O_{2})}_{1 - x}$ gate oxide films

H. J. Uppal; I. Z. Mitrovic; S. Hall; B. Hamilton; V. Markevich; A. R. Peaker

J. Vac. Sci. Technol. B 27, 443–447 (2009) https://doi.org/10.1116/1.3025822

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Impact of progressive oxide soft breakdown on metal oxide semiconductor parameters: Experiment and modeling

L. Gerrer; G. Ribes; G. Ghibaudo; J. Jomaah

J. Vac. Sci. Technol. B 27, 448–452 (2009) https://doi.org/10.1116/1.3065414

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Progressive degradation of $Ti N ∕ Si O N$ and $Ti N ∕ Hf O_{2}$ gate stack triple gate SOI nFinFETs subjected to electrical stress

J. M. Rafí; E. Simoen; A. Mercha; N. Collaert; F. Campabadal; C. Claeys

J. Vac. Sci. Technol. B 27, 453–458 (2009) https://doi.org/10.1116/1.3025883

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Investigation of Bias-Temperature Instability in work-function-tuned high- $k$ /metal-gate stacks

B. Kaczer; A. Veloso; Ph. J. Roussel; T. Grasser; G. Groeseneken

J. Vac. Sci. Technol. B 27, 459–462 (2009) https://doi.org/10.1116/1.3054352

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high- $k$ /metal-gate $p$ -type metal oxide semiconductor field effect transistors

M. Aoulaiche; B. Kaczer; Ph. J. Roussel; R. O’Connor; M. Houssa; S. De Gendt; H. E. Maes; G. Groeseneken

J. Vac. Sci. Technol. B 27, 463–467 (2009) https://doi.org/10.1116/1.3058740

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Hot carrier degradation in $Hf Si O N ∕ Ti N$ fin shaped field effect transistor with different substrate orientations

Chadwin D. Young; Ji-Woon Yang; Kenneth Matthews; Sagar Suthram; Muhammad Mustafa Hussain; Gennadi Bersuker; Casey Smith; Rusty Harris; Rino Choi; Byoung Hun Lee; Hsing-Huang Tseng

J. Vac. Sci. Technol. B 27, 468–471 (2009) https://doi.org/10.1116/1.3072919

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

$Si O_{2}$ interfacial layer as the origin of the breakdown of high- $k$ dielectrics stacks

M. Rafik; G. Ribes; D. Roy; G. Ghibaudd

J. Vac. Sci. Technol. B 27, 472–475 (2009) https://doi.org/10.1116/1.3077185

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

${Al}_{2} O_{3} - Si O_{2}$ stack with enhanced reliability

M. Lisiansky; A. Fenigstein; A. Heiman; Y. Raskin; Y. Roizin; L. Bartholomew; J. Owyang; A. Gladkikh; R. Brener; I. Geppert; E. Lyakin; B. Meyler; Y. Shnieder; S. Yofis; M. Eizenberg

J. Vac. Sci. Technol. B 27, 476–481 (2009) https://doi.org/10.1116/1.3025821

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Suppression of parasitic electron injection in silicon-oxide-nitride-oxide-silicon-type memory cells using high- $k$ capping layers

T. Erlbacher; T. Graf; N. DasGupta; A. J. Bauer; H. Ryssel

J. Vac. Sci. Technol. B 27, 482–485 (2009) https://doi.org/10.1116/1.3021020

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Contact etch stop $a - {Si}_{x} N_{y} : H$ layer: A key factor for single polysilicon flash memory data retention

G. Beylier; D. Benoit; P. Mora; S. Bruyère; G. Ghibaudo

J. Vac. Sci. Technol. B 27, 486–489 (2009) https://doi.org/10.1116/1.3071846

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

On the impact of silicon nitride technology on charge trap NAND memories

A. Sebastiani; C. Scozzari; A. Mauri; A. Modelli; G. Albini; R. Piagge; P. Bacciaglia; A. Del Vitto; M. Alessandri; A. Grossi; P. Tessariol; G. Ghidini

J. Vac. Sci. Technol. B 27, 490–493 (2009) https://doi.org/10.1116/1.3025836

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Application of plasma enhanced chemical vapor deposition silicon oxynitride layers in nonvolatile semiconductor memory devices

Robert Mroczyński; Romuald B. Beck

J. Vac. Sci. Technol. B 27, 494–497 (2009) https://doi.org/10.1116/1.3054353

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Ferroelectric nanostructures

Ionela Vrejoiu; Marin Alexe; Dietrich Hesse; Ulrich Gösele

J. Vac. Sci. Technol. B 27, 498–503 (2009) https://doi.org/10.1116/1.3025907

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications

K. Henkel; I. Lazareva; D. Mandal; I. Paloumpa; K. Müller; Y. Koval; P. Müller; D. Schmeißer

J. Vac. Sci. Technol. B 27, 504–507 (2009) https://doi.org/10.1116/1.3043476

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Interface states formation in a localized charge trapping nonvolatile memory device

Asia Shapira; Yael Shur; Yosi Shacham-Diamand; Assaf Shappir; Boaz Eitan

J. Vac. Sci. Technol. B 27, 508–511 (2009) https://doi.org/10.1116/1.3025891

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Peculiar characteristics of nanocrystal memory cells programming window

Alberto Gasperin; Esteve Amat; Javier Martin; Marc Porti; Montserrat Nafria; Alessandro Paccagnella

J. Vac. Sci. Technol. B 27, 512–516 (2009) https://doi.org/10.1116/1.3025854

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Low- $k$ dielectrics for trench isolation in nanoscaled complementary metal oxide semiconductor imagers

F. Irrera; G. Puzzilli; L. Ricci; F. Russo; F. Stirpe

J. Vac. Sci. Technol. B 27, 517–520 (2009) https://doi.org/10.1116/1.3074346

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Improved characterization of Fourier transform infrared spectra analysis for post-etched ultra-low- $κ$ SiOCH dielectric using chemometric methods

Thomas Oszinda; Volkhard Beyer; Matthias Schaller; Daniel Fischer; Christin Bartsch; Stefan E. Schulz

J. Vac. Sci. Technol. B 27, 521–526 (2009) https://doi.org/10.1116/1.3043466

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Study on the characteristics of toluene-tetraethoxysilane hybrid plasma-polymer thin films

S.-J. Cho; I.-S. Bae; S. Lee; D. Jung; W. S. Choi; J.-H. Boo

J. Vac. Sci. Technol. B 27, 527–530 (2009) https://doi.org/10.1116/1.3025820

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Photoluminescence from high-pressure-annealed silicon dioxide

C. K. Wong; A. Misiuk; Hei Wong; A. Panas

J. Vac. Sci. Technol. B 27, 531–534 (2009) https://doi.org/10.1116/1.3025838

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Light emission and photoluminescence from high- $k$ dielectrics containing Ge nanocrystals

Shu-Tong Chang; Shu-Hui Liao

J. Vac. Sci. Technol. B 27, 535–537 (2009) https://doi.org/10.1116/1.3025844

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Gas sensing materials based on $Ti O_{2}$ thin films

Nicoleta Iftimie; D. Luca; Felicia Lacomi; Mihaela Girtan; Diana Mardare

J. Vac. Sci. Technol. B 27, 538–541 (2009) https://doi.org/10.1116/1.3021050

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Mechanical properties of anodic aluminum oxide for microelectromechanical system applications

L. Moreno-Hagelsieb; D. Flandre; J.-P. Raskin

J. Vac. Sci. Technol. B 27, 542–546 (2009) https://doi.org/10.1116/1.3025906

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Initial oxidation of Si(110) as studied by real-time synchrotron-radiation x-ray photomission spectroscopy

M. Suemitsu; Y. Yamamoto; H. Togashi; Y. Enta; A. Yoshigoe; Y. Teraoka

J. Vac. Sci. Technol. B 27, 547–550 (2009) https://doi.org/10.1116/1.3021032

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Issues

Regular Articles

Brief Reports and Comments

Errata

PAPERS FROM THE 15TH WORKSHOP ON DIELECTRICS IN MICROELECTRONICS

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only