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Review Article

Gas-assisted focused electron beam and ion beam processing and fabrication

Ivo Utke; Patrik Hoffmann; John Melngailis

J. Vac. Sci. Technol. B 26, 1197–1276 (2008) https://doi.org/10.1116/1.2955728

Abstract

View articletitled, Gas-assisted focused electron beam and ion beam processing and fabrication

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Regular Articles

Structural and electrical properties of ${Bi}_{1.5} {Mg}_{1.0} {Nb}_{1.5} O_{7}$ thin films deposited on $Pt / {TiO}_{2} / {SiO}_{2} / Si$ substrates by rf-magnetron sputtering

Jun-Ku Ahn; Nguyen Duy Cuong; Soon-Gil Yoon; Chang-Soo Kim

J. Vac. Sci. Technol. B 26, 1277–1280 (2008) https://doi.org/10.1116/1.2932090

Abstract

View articletitled, Structural and electrical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Bi</mtext></mrow><mrow><mn>1.5</mn></mrow></msub><msub><mrow><mtext>Mg</mtext></mrow><mrow><mn>1.0</mn></mrow></msub><msub><mrow><mtext>Nb</mtext></mrow><mrow><mn>1.5</mn></mrow></msub><msub><mtext>O</mtext><mn>7</mn></msub></mrow></math> thin films deposited on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Pt</mtext><mo>/</mo><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub><mo>/</mo><msub><mrow><mtext>SiO</mtext></mrow><mn>2</mn></msub><mo>/</mo><mtext>Si</mtext></mrow></math> substrates by rf-magnetron sputtering

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Surface roughness generated by plasma etching processes of silicon

M. Martin; G. Cunge

J. Vac. Sci. Technol. B 26, 1281–1288 (2008) https://doi.org/10.1116/1.2932091

Abstract

View articletitled, Surface roughness generated by plasma etching processes of silicon

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System-level line-edge roughness limits in extreme ultraviolet lithography

Patrick P. Naulleau; Dimitra Niakoula; Guojing Zhang

J. Vac. Sci. Technol. B 26, 1289–1293 (2008) https://doi.org/10.1116/1.2932100

Abstract

View articletitled, System-level line-edge roughness limits in extreme ultraviolet lithography

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Highly reliable growth process of carbon nanowalls using radical injection plasma-enhanced chemical vapor deposition

Shingo Kondo; Masaru Hori; Koji Yamakawa; Shoji Den; Hiroyuki Kano; Mineo Hiramatsu

J. Vac. Sci. Technol. B 26, 1294–1300 (2008) https://doi.org/10.1116/1.2938397

Abstract

View articletitled, Highly reliable growth process of carbon nanowalls using radical injection plasma-enhanced chemical vapor deposition

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Metal-containing release layers for use with UV-cure nanoimprint lithographic template materials

F. A. Houle; S. Raoux; D. C. Miller; C. Jahnes; S. Rossnagel

J. Vac. Sci. Technol. B 26, 1301–1304 (2008) https://doi.org/10.1116/1.2939258

Abstract

View articletitled, Metal-containing release layers for use with UV-cure nanoimprint lithographic template materials

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Stable field emission from screen-printed ZnO-tetrapod emitters

Kai Hou; Chi Li; Wei Lei; Xiaobing Zhang; Ke Qu; Xiaxi Yang; Zhiwei Zhao; Baoping Wang

J. Vac. Sci. Technol. B 26, 1305–1308 (2008) https://doi.org/10.1116/1.2939259

Abstract

View articletitled, Stable field emission from screen-printed ZnO-tetrapod emitters

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Conformal filling of silicon micropillar platform with ${}^{10}b oron$

N. Deo; J. R. Brewer; C. E. Reinhardt; R. J. Nikolić; C. L. Cheung

J. Vac. Sci. Technol. B 26, 1309–1314 (2008) https://doi.org/10.1116/1.2939260

Abstract

View articletitled, Conformal filling of silicon micropillar platform with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mmultiscripts><mtext>b</mtext><mprescripts></mprescripts><mtext></mtext><mrow><mn>10</mn></mrow></mmultiscripts><mtext>oron</mtext></mrow></math>

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Synthesis and characterization of $Ti O_{2} - Ge$ nanocomposites

Amita Goyal; Abdul K. Rumaiz; Y. Miao; Sukti Hazra; C. Ni; S. Ismat Shah

J. Vac. Sci. Technol. B 26, 1315–1320 (2008) https://doi.org/10.1116/1.2939262

Abstract

View articletitled, Synthesis and characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>–</mo><mi mathvariant="normal">Ge</mi></mrow></math> nanocomposites

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Preparation and field emission property of nanodiamond-cluster-embedded diamondlike carbon film

W. G. Xie; Jian Chen; W. W. Ming; Jun Chen; J. Zhou; S. Z. Deng; N. S. Xu

J. Vac. Sci. Technol. B 26, 1321–1325 (2008) https://doi.org/10.1116/1.2945297

Abstract

View articletitled, Preparation and field emission property of nanodiamond-cluster-embedded diamondlike carbon film

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Smooth sidewall in InP-based photonic crystal membrane etched by $N_{2}$ -based inductively coupled plasma

K. H. Lee; S. Guilet; G. Patriarche; I. Sagnes; A. Talneau

J. Vac. Sci. Technol. B 26, 1326–1333 (2008) https://doi.org/10.1116/1.2945299

Abstract

View articletitled, Smooth sidewall in InP-based photonic crystal membrane etched by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mn>2</mn></msub></math>-based inductively coupled plasma

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Characterization of photoconductive CdS thin films prepared on glass substrates for photoconductive-sensor applications

Sung-Gi Hur; Eui-Tae Kim; Ji-Hong Lee; Geun-Hong Kim; Soon-Gil Yoon

J. Vac. Sci. Technol. B 26, 1334–1337 (2008) https://doi.org/10.1116/1.2945301

Abstract

View articletitled, Characterization of photoconductive CdS thin films prepared on glass substrates for photoconductive-sensor applications

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Interfacial and electrical properties of ${Zr}_{x} {Ti}_{1 - x} O_{4}$ $(x = 0.66)$ films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high- $k$ gate dielectric

B. S. Sahu; S. V. N. Pammi; Nak-Jin Seong; Soon-Gil Yoon

J. Vac. Sci. Technol. B 26, 1338–1343 (2008) https://doi.org/10.1116/1.2945302

Abstract

View articletitled, Interfacial and electrical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Zr</mi><mi>x</mi></msub><msub><mi>Ti</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">O</mi><mn>4</mn></msub></mrow></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mo>(</mo><mi>x</mi><mo>=</mo><mn>0.66</mn><mo>)</mo></mrow></math> films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> gate dielectric

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Metal nanoparticle embedded porous thin films prepared by oblique angle coevaporation

R. Blackwell; Y.-P. Zhao

J. Vac. Sci. Technol. B 26, 1344–1349 (2008) https://doi.org/10.1116/1.2949106

Abstract

View articletitled, Metal nanoparticle embedded porous thin films prepared by oblique angle coevaporation

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Optical and photocatalytic properties of oblique angle deposited $Ti O_{2}$ nanorod array

Y. P. He; Z. Y. Zhang; Y. P. Zhao

J. Vac. Sci. Technol. B 26, 1350–1358 (2008) https://doi.org/10.1116/1.2949111

Abstract

View articletitled, Optical and photocatalytic properties of oblique angle deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> nanorod array

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$Ti ∕ Ni$ bilayer Ohmic contact on $4 H - Si C$

Takasumi Ohyanagi; Yasuo Onose; Atsuo Watanabe

J. Vac. Sci. Technol. B 26, 1359–1362 (2008) https://doi.org/10.1116/1.2949116

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><mo>∕</mo><mi mathvariant="normal">Ni</mi></mrow></math> bilayer Ohmic contact on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>4</mn><mi>H</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi><mi mathvariant="normal">C</mi></mrow></math>

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A thermocompressive bonding method using a pure sputtered Au layer and its wafer scale package application

Jongseok Kim; Sangwook Kwon; Youngteak Hong; Insang Song; Byeongkwon Ju

J. Vac. Sci. Technol. B 26, 1363–1367 (2008) https://doi.org/10.1116/1.2952461

Abstract

View articletitled, A thermocompressive bonding method using a pure sputtered Au layer and its wafer scale package application

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Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation density

D. J. Ewing; M. A. Derenge; P. B. Shah; U. Lee; T. S. Zheleva; K. A. Jones

J. Vac. Sci. Technol. B 26, 1368–1372 (2008) https://doi.org/10.1116/1.2953724

Abstract

View articletitled, Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation density

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Etching rate, optical transmittance, and charge trapping characteristics of Al-rich ${Al}_{2} O_{3}$ thin film fabricated by rf magnetron cosputtering

Shunji Nakata; Shingo Nagai; Minoru Kumeda; Takeshi Kawae; Akiharu Morimoto; Tatsuo Shimizu

J. Vac. Sci. Technol. B 26, 1373–1378 (2008) https://doi.org/10.1116/1.2953727

Abstract

View articletitled, Etching rate, optical transmittance, and charge trapping characteristics of Al-rich <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Al</mtext></mrow><mn>2</mn></msub><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math> thin film fabricated by rf magnetron cosputtering

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Flexible organic light-emitting diodes with improved performance by insertion of an UV-sensitive layer

Lin Hui; Yu Junsheng; Wang Nana; Huang Chunhua; Jiang Yadong

J. Vac. Sci. Technol. B 26, 1379–1381 (2008) https://doi.org/10.1116/1.2953729

Abstract

View articletitled, Flexible organic light-emitting diodes with improved performance by insertion of an UV-sensitive layer

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Effects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammonia

C. D’Emic; J. Newbury; C. Scerbo; M. Copel; M. Gordon

J. Vac. Sci. Technol. B 26, 1382–1389 (2008) https://doi.org/10.1116/1.2953730

Abstract

View articletitled, Effects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammonia

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Direct UV-imprint lithography using conductive nanofiller-dispersed UV-curable resin

Jun-Hyuk Choi; Soon-Won Lee; Dae-Geun Choi; Ki-Don Kim; Jun-Ho Jeong; Eung-Suk Lee

J. Vac. Sci. Technol. B 26, 1390–1394 (2008) https://doi.org/10.1116/1.2953731

Abstract

View articletitled, Direct UV-imprint lithography using conductive nanofiller-dispersed UV-curable resin

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X-ray photoelectron spectroscopy and low-energy electron diffraction analyses on the extremely low work-function surface of W(100) modified by yttrium oxide

Takashi Kawakubo; Yusuke Shimoyama; Hideaki Nakane; Hiroshi Adachi

J. Vac. Sci. Technol. B 26, 1395–1397 (2008) https://doi.org/10.1116/1.2956629

Abstract

View articletitled, X-ray photoelectron spectroscopy and low-energy electron diffraction analyses on the extremely low work-function surface of W(100) modified by yttrium oxide

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Comparison between GaN thin film grown by femtosecond and nanosecond pulsed laser depositions

X. L. Tong; D. S. Jiang; L. Liu; H. Dai

J. Vac. Sci. Technol. B 26, 1398–1403 (2008) https://doi.org/10.1116/1.2956631

Abstract

View articletitled, Comparison between GaN thin film grown by femtosecond and nanosecond pulsed laser depositions

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Spherical field emission cathode based on carbon nanotube paste and its application in luminescent bulbs

Weiqi Fu; Peng Liu; Jie Tang; Liang Liu; Shoushan Fan

J. Vac. Sci. Technol. B 26, 1404–1406 (2008) https://doi.org/10.1116/1.2958243

Abstract

View articletitled, Spherical field emission cathode based on carbon nanotube paste and its application in luminescent bulbs

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A study of patterning and annealing effects on the performance of magnetic planar inductor

Hongfang Sun; Zewen Liu; Jiahao Zhao; Li Wang; Jing Zhu

J. Vac. Sci. Technol. B 26, 1407–1411 (2008) https://doi.org/10.1116/1.2958245

Abstract

View articletitled, A study of patterning and annealing effects on the performance of magnetic planar inductor

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High sensitivity cantilevers for measuring persistent currents in normal metal rings

A. C. Bleszynski-Jayich; W. E. Shanks; B. R. Ilic; J. G. E. Harris

J. Vac. Sci. Technol. B 26, 1412–1416 (2008) https://doi.org/10.1116/1.2958247

Abstract

View articletitled, High sensitivity cantilevers for measuring persistent currents in normal metal rings

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Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

J. Harman; A. Kabulski; V. R. Pagán; P. Famouri; K. R. Kasarla; L. E. Rodak; J. Peter Hensel; D. Korakakis

J. Vac. Sci. Technol. B 26, 1417–1419 (2008) https://doi.org/10.1116/1.2958253

Abstract

View articletitled, Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

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Electrical characteristics of $Pt ∕ Au$ Schottky contacts to plasma-etched AlGaN

A. A. Syed; X. A. Cao; A. A. Woodworth; C. D. Stinespring

J. Vac. Sci. Technol. B 26, 1420–1424 (2008) https://doi.org/10.1116/1.2958254

Abstract

View articletitled, Electrical characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Pt</mi><mo>∕</mo><mi mathvariant="normal">Au</mi></mrow></math> Schottky contacts to plasma-etched AlGaN

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Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles

Yugo Osano; Kouichi Ono

J. Vac. Sci. Technol. B 26, 1425–1439 (2008) https://doi.org/10.1116/1.2958240

Abstract

View articletitled, Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles

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Brief Reports and Comments

Etching of TiN-based gates for advanced complementary metal-oxide-semiconductor devices

V. Bliznetsov; N. Singh; R. Kumar; N. Balasubramanian; P. Guo; S. J. Lee; Y. Cai

J. Vac. Sci. Technol. B 26, 1440–1444 (2008) https://doi.org/10.1116/1.2953732

Abstract

View articletitled, Etching of TiN-based gates for advanced complementary metal-oxide-semiconductor devices

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Shop Notes

Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics

L. Aguilera; W. Polspoel; A. Volodin; C. Van Haesendonck; M. Porti; W. Vandervorst; M. Nafria; X. Aymerich

J. Vac. Sci. Technol. B 26, 1445–1449 (2008) https://doi.org/10.1116/1.2958246

Extract

View articletitled, Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics

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Errata

Erratum: “Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition” [J. Vac. Sci. Technol. B 26, L1 (2008)]

Jung Hyeun Kim

J. Vac. Sci. Technol. B 26, 1450 (2008) https://doi.org/10.1116/1.2952482

Extract

View articletitled, Erratum: “Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition” [J. Vac. Sci. Technol. B 26, L1 (2008)]

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PAPERS FROM THE 35th ANNUAL CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES

Organics

Interfacial effects in thin films of polymeric semiconductors

Jonathan Rivnay; Leslie H. Jimison; Michael F. Toney; Michael Preiner; Nicholas A. Melosh; Alberto Salleo

J. Vac. Sci. Technol. B 26, 1454–1460 (2008) https://doi.org/10.1116/1.2952454

Abstract

View articletitled, Interfacial effects in thin films of polymeric semiconductors

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Single molecule measurements with photoelectron emission microscopy

Xianhua Kong; J. E. Rowe; R. J. Nemanich

J. Vac. Sci. Technol. B 26, 1461–1465 (2008) https://doi.org/10.1116/1.2932094

Abstract

View articletitled, Single molecule measurements with photoelectron emission microscopy

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Complex Oxides

Depth-resolved cathodoluminescence spectroscopy study of defects in $Sr Ti O_{3}$

Jun Zhang; S. Walsh; C. Brooks; D. G. Schlom; L. J. Brillson

J. Vac. Sci. Technol. B 26, 1466–1471 (2008) https://doi.org/10.1116/1.2918315

Abstract

View articletitled, Depth-resolved cathodoluminescence spectroscopy study of defects in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sr</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math>

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Oxide Semiconductors

Effects of oxygen contents in the active channel layer on electrical characteristics of ZnO-based thin film transistors

Yeon-Keon Moon; Dae-Yong Moon; Sih Lee; Sang-Ho Lee; Jong-Wan Park; Chang-Oh Jeong

J. Vac. Sci. Technol. B 26, 1472–1476 (2008) https://doi.org/10.1116/1.2918329

Abstract

View articletitled, Effects of oxygen contents in the active channel layer on electrical characteristics of ZnO-based thin film transistors

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Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces

D. R. Doutt; C. Zgrabik; H. L. Mosbacker; L. J. Brillson

J. Vac. Sci. Technol. B 26, 1477–1482 (2008) https://doi.org/10.1116/1.2919158

Abstract

View articletitled, Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces

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Characterization of Quantum Structures

Theory of electron tunneling through a scanning tunneling microscopy-tip/quantum dot junction

David M.-T. Kuo; Yia-Chung Chang

J. Vac. Sci. Technol. B 26, 1483–1487 (2008) https://doi.org/10.1116/1.2918321

Abstract

View articletitled, Theory of electron tunneling through a scanning tunneling microscopy-tip/quantum dot junction

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Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy

A. M. Burke; N. Aoki; R. Akis; Y. Ochiai; D. K. Ferry

J. Vac. Sci. Technol. B 26, 1488–1491 (2008) https://doi.org/10.1116/1.2958239

Abstract

View articletitled, Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy

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Quantum ring formation and antimony segregation in $Ga Sb ∕ Ga As$ nanostructures

R. Timm; A. Lenz; H. Eisele; L. Ivanova; M. Dähne; G. Balakrishnan; D. L. Huffaker; I. Farrer; D. A. Ritchie

J. Vac. Sci. Technol. B 26, 1492–1503 (2008) https://doi.org/10.1116/1.2952451

Abstract

View articletitled, Quantum ring formation and antimony segregation in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">Sb</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> nanostructures

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Strain Phenomena

Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions

B. L. VanMil; R. E. Stahlbush; R. L. Myers-Ward; K.-K. Lew; C. R. Eddy, Jr.; D. K. Gaskill

J. Vac. Sci. Technol. B 26, 1504–1507 (2008) https://doi.org/10.1116/1.2918317

Abstract

View articletitled, Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions

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Carrier Dynamics

Interaction of microwaves with photoelectrons in semiconductors

R. K. Ahrenkiel; S. W. Johnston

J. Vac. Sci. Technol. B 26, 1508–1515 (2008) https://doi.org/10.1116/1.2945296

Abstract

View articletitled, Interaction of microwaves with photoelectrons in semiconductors

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III-V Surfaces

As-rich $In As (001) - (2 \times 4)$ phases investigated by in situ surface x-ray diffraction

B. P. Tinkham; W. Braun; K. H. Ploog; M. Takahasi; J. Mizuki; F. Grosse

J. Vac. Sci. Technol. B 26, 1516–1520 (2008) https://doi.org/10.1116/1.2918314

Abstract

View articletitled, As-rich <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mrow><mo>(</mo><mn>001</mn><mo>)</mo></mrow><mtext>-</mtext><mrow><mo>(</mo><mn>2</mn><mo>×</mo><mn>4</mn><mo>)</mo></mrow></mrow></math> phases investigated by in situ surface x-ray diffraction

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Magnetic Tunnel Junctions

Interface structure and transport of complex oxide junctions

B. B. Nelson-Cheeseman; F. Wong; R. V. Chopdekar; M. Chi; E. Arenholz; N. D. Browning; Y. Suzuki

J. Vac. Sci. Technol. B 26, 1521–1525 (2008) https://doi.org/10.1116/1.2956626

Abstract

View articletitled, Interface structure and transport of complex oxide junctions

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Spintronics

Magnetocapacitance effect in $In Mn As ∕ In As$ $p - n$ heterojunctions

N. Rangaraju; B. W. Wessels

J. Vac. Sci. Technol. B 26, 1526–1529 (2008) https://doi.org/10.1116/1.2929861

Abstract

View articletitled, Magnetocapacitance effect in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">Mn</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi></mrow></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>-</mtext><mi>n</mi></mrow></math> heterojunctions

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Electronic signature of MnAs phases in bare and buried films grown on GaAs(001)

M. Moreno; A. Kumar; M. Tallarida; A. Ney; K. H. Ploog; K. Horn

J. Vac. Sci. Technol. B 26, 1530–1533 (2008) https://doi.org/10.1116/1.2957614

Abstract

View articletitled, Electronic signature of MnAs phases in bare and buried films grown on GaAs(001)

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Nanostructures

Surface bonding effects in compound semiconductor nanoparticles: II

H. H. Farrell

J. Vac. Sci. Technol. B 26, 1534–1541 (2008) https://doi.org/10.1116/1.2953733

Abstract

View articletitled, Surface bonding effects in compound semiconductor nanoparticles: II

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Nitride Semiconductors

Steady state and transient behavior of currents in $Al Ga N ∕ Ga N$ planar Schottky diodes and mechanism of current collapse

Hideki Hasegawa; Masamichi Akazawa

J. Vac. Sci. Technol. B 26, 1542–1550 (2008) https://doi.org/10.1116/1.2929865

Abstract

View articletitled, Steady state and transient behavior of currents in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> planar Schottky diodes and mechanism of current collapse

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Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix

A. Yoshikawa; S. B. Che; N. Hashimoto; H. Saito; Y. Ishitani; X. Q. Wang

J. Vac. Sci. Technol. B 26, 1551–1559 (2008) https://doi.org/10.1116/1.2957620

Abstract

View articletitled, Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix

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Integration

Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate

D. Liang; J. E. Bowers

J. Vac. Sci. Technol. B 26, 1560–1568 (2008) https://doi.org/10.1116/1.2943667

Abstract

View articletitled, Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate

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III-V MOS Structures

Admittance study of GaAs high- $k$ metal-insulator-semiconductor capacitors with Si interface control layer

Masamichi Akazawa; Hideki Hasegawa

J. Vac. Sci. Technol. B 26, 1569–1578 (2008) https://doi.org/10.1116/1.2952456

Abstract

View articletitled, Admittance study of GaAs high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> metal-insulator-semiconductor capacitors with Si interface control layer

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Oxides on Si

Atomic scale dielectric constant near the ${SiO}_{2} / Si (001)$ interface

Sadakazu Wakui; Jun Nakamura; Akiko Natori

J. Vac. Sci. Technol. B 26, 1579–1584 (2008) https://doi.org/10.1116/1.2937734

Abstract

View articletitled, Atomic scale dielectric constant near the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SiO</mtext></mrow><mn>2</mn></msub><mo>/</mo><mtext>Si</mtext><mrow><mo>(</mo><mrow><mn>001</mn></mrow><mo>)</mo></mrow></mrow></math> interface

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Optimum ambient $N_{2}$ pressure during HfAlO pulsed-laser deposition in $Pt ∕ SBT ∕ Hf Al O ∕ Si$ field effect transistors

M. Takahashi; T. Horiuchi; S. Wang; Q.-H. Li; S. Sakai

J. Vac. Sci. Technol. B 26, 1585–1587 (2008) https://doi.org/10.1116/1.2952464

Abstract

View articletitled, Optimum ambient <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mn>2</mn></msub></math> pressure during HfAlO pulsed-laser deposition in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Pt</mi><mo>∕</mo><mi>SBT</mi><mo>∕</mo><mi mathvariant="normal">Hf</mi><mi mathvariant="normal">Al</mi><mi mathvariant="normal">O</mi><mo>∕</mo><mi mathvariant="normal">Si</mi></mrow></math> field effect transistors

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Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition

Woong-Sun Kim; Tae-Sub Kim; Byung-Woo Kang; Myoung-Gyun Ko; Sang-Kyun Park; Jong-Wan Park

J. Vac. Sci. Technol. B 26, 1588–1591 (2008) https://doi.org/10.1116/1.2936233

Abstract

View articletitled, Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition

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Nanoscale Contacts

Nickel and nickel silicide Schottky barrier contacts to $n$ -type silicon nanowires

S. M. Woodruff; N. S. Dellas; B. Z. Liu; S. M. Eichfeld; T. S. Mayer; J. M. Redwing; S. E. Mohney

J. Vac. Sci. Technol. B 26, 1592–1596 (2008) https://doi.org/10.1116/1.2939256

Abstract

View articletitled, Nickel and nickel silicide Schottky barrier contacts to <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type silicon nanowires

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$Au ∕ Ag$ and $Au ∕ Pd$ molecular contacts to GaAs

Azadeh Ahktari-Zavareh; Wenjie Li; Karen L. Kavanagh; Aaron J. Trionfi; Jason C. Jones; John L. Reno; Julia W. P. Hsu; A. Alec Talin

J. Vac. Sci. Technol. B 26, 1597–1601 (2008) https://doi.org/10.1116/1.2919159

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Au</mi><mo>∕</mo><mi mathvariant="normal">Ag</mi></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Au</mi><mo>∕</mo><mi mathvariant="normal">Pd</mi></mrow></math> molecular contacts to GaAs

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PAPERS FROM THE SECOND INTERNATIONAL CONFERENCE ON ONE-DIMENSIONAL NANOMATERIALS

Atomic force microscopy and scanning tunneling microscopy-spectroscopy characterization of ZnO nanobelts

T. G. G. Maffeïs; M. W. Penny; M. R. Brown; K. W. Liew; D. Fu; N. Tsolakoglou; C. J. Wright; S. P. Wilks

J. Vac. Sci. Technol. B 26, 1606–1608 (2008) https://doi.org/10.1116/1.2838048

Abstract

View articletitled, Atomic force microscopy and scanning tunneling microscopy-spectroscopy characterization of ZnO nanobelts

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Tunable double dots and Kondo enhanced Andreev transport in InAs nanowires

T. Sand-Jespersen; M. Aagesen; C. B. Sørensen; P. E. Lindelof; J. Nygård

J. Vac. Sci. Technol. B 26, 1609–1612 (2008) https://doi.org/10.1116/1.2839634

Abstract

View articletitled, Tunable double dots and Kondo enhanced Andreev transport in InAs nanowires

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Other one-dimensional systems and thermal properties

M. S. Dresselhaus; G. Dresselhaus; Mario Hofmann

J. Vac. Sci. Technol. B 26, 1613–1618 (2008) https://doi.org/10.1116/1.2885203

Abstract

View articletitled, Other one-dimensional systems and thermal properties

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Surface bound organic nanowires

Frank Balzer; Manuela Schiek; Horst-Günter Rubahn; Katharina Al-Shamery; Arne Lützen

J. Vac. Sci. Technol. B 26, 1619–1623 (2008) https://doi.org/10.1116/1.2891244

Abstract

View articletitled, Surface bound organic nanowires

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Generation of dc spin current in a narrow channel with Rashba and Dresselhaus spin-orbit interactions

Chi-Shung Tang; Wen-Hsuan Kuan; Wen Xu; Yia-Chung Chang

J. Vac. Sci. Technol. B 26, 1624–1627 (2008) https://doi.org/10.1116/1.2908440

Abstract

View articletitled, Generation of dc spin current in a narrow channel with Rashba and Dresselhaus spin-orbit interactions

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Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors

Raseong Kim; Neophytos Neophytou; Abhijeet Paul; Gerhard Klimeck; Mark S. Lundstrom

J. Vac. Sci. Technol. B 26, 1628–1631 (2008) https://doi.org/10.1116/1.2908442

Abstract

View articletitled, Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors

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Letters

Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies

S. Ramanathan; A. Karthikeyan; S. A. Govindarajan; P. D. Kirsch

J. Vac. Sci. Technol. B 26, L33–L35 (2008) https://doi.org/10.1116/1.2957622

Abstract

View articletitled, Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies

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Ion beam synthesis of Ni nanoparticles embedded in quartz

P. Kumar; Ravi Kumar; D. Kanjilal; M. Knobel; P. Thakur; K. H. Chae

J. Vac. Sci. Technol. B 26, L36–L40 (2008) https://doi.org/10.1116/1.2956624

Abstract

View articletitled, Ion beam synthesis of Ni nanoparticles embedded in quartz

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Issues

Review Article

Regular Articles

Brief Reports and Comments

Shop Notes

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PAPERS FROM THE 35th ANNUAL CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES

Organics

Complex Oxides

Oxide Semiconductors

Characterization of Quantum Structures

Strain Phenomena

Carrier Dynamics

III-V Surfaces

Magnetic Tunnel Junctions

Spintronics

Nanostructures

Nitride Semiconductors

Integration

III-V MOS Structures

Oxides on Si

Nanoscale Contacts

PAPERS FROM THE SECOND INTERNATIONAL CONFERENCE ON ONE-DIMENSIONAL NANOMATERIALS

Letters

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