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Regular Articles

Microscopic investigation of the CdS buffer layer growth on $Cu (In, Ga) {Se}_{2}$ absorbers

S. Sadewasser; W. Bremsteller; T. Plake; C. A. Kaufmann; Ch. Pettenkofer

J. Vac. Sci. Technol. B 26, 901–903 (2008) https://doi.org/10.1116/1.2902859

Abstract

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Statistical representation of intrinsic electronic tunneling characteristics through alkyl self-assembled monolayers in nanowell device structures

Hyunwook Song; Takhee Lee; Nak-Jin Choi; Hyoyoung Lee

J. Vac. Sci. Technol. B 26, 904–908 (2008) https://doi.org/10.1116/1.2905237

Abstract

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Effect of substrate temperature on structural and electrical properties of liquid-delivery metal organic chemical vapor deposited indium oxide thin films on silicon

S. Venkat; N. Pammi; B. S. Sahu; Nak-Jin Seong; Soon-Gil Yoon

J. Vac. Sci. Technol. B 26, 909–913 (2008) https://doi.org/10.1116/1.2905238

Abstract

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Controllable fabrication of the micropore shape of two-dimensional photonic crystals using holographic lithography

Mei-Li Hsieh; Yi-Sheng Lan

J. Vac. Sci. Technol. B 26, 914–917 (2008) https://doi.org/10.1116/1.2905240

Abstract

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Microelectromechanical system microhotplates for reliability testing of thin films and nanowires

Juan C. Aceros; Nicol E. McGruer; George G. Adams

J. Vac. Sci. Technol. B 26, 918–926 (2008) https://doi.org/10.1116/1.2906263

Abstract

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Field emission for cantilever sensors

C. K. Yang; A. J. le Fèbre; G. Pandraud; E. van der Drift; P. J. French

J. Vac. Sci. Technol. B 26, 927–933 (2008) https://doi.org/10.1116/1.2906314

Abstract

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Ion beam machining of Si layer deposited on Zerodur® substrate

Yuichi Kurashima; Tomonori Tajima; Iwao Miyamoto; Manabu Ando; Atsushi Numata

J. Vac. Sci. Technol. B 26, 934–938 (2008) https://doi.org/10.1116/1.2907779

Abstract

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Electron beam induced deposition of iron nanostructures

G. Hochleitner; H. D. Wanzenboeck; E. Bertagnolli

J. Vac. Sci. Technol. B 26, 939–944 (2008) https://doi.org/10.1116/1.2907781

Abstract

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Resistivity and surface states density of $n$ - and $p$ -type silicon nanowires

F. Vaurette; J. P. Nys; D. Deresmes; B. Grandidier; D. Stiévenard

J. Vac. Sci. Technol. B 26, 945–948 (2008) https://doi.org/10.1116/1.2908438

Abstract

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Probe current, probe size, and the practical brightness for probe forming systems

M. S. Bronsgeest; J. E. Barth; L. W. Swanson; P. Kruit

J. Vac. Sci. Technol. B 26, 949–955 (2008) https://doi.org/10.1116/1.2907780

Abstract

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Influence of As-stabilized surface on the formation of $In As ∕ Ga As$ quantum dots

Chi-Che Tseng; Shu-Ting Chou; Yi-Hao Chen; Tung-Hsun Chung; Shih-Yen Lin; Meng-Chyi Wu

J. Vac. Sci. Technol. B 26, 956–958 (2008) https://doi.org/10.1116/1.2912083

Abstract

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Stable room temperature deposited amorphous $In Ga Zn O_{4}$ thin film transistors

Wantae Lim; S.-H. Kim; Yu-Lin Wang; J. W. Lee; D. P. Norton; S. J. Pearton; F. Ren; I. I. Kravchenko

J. Vac. Sci. Technol. B 26, 959–962 (2008) https://doi.org/10.1116/1.2917075

Abstract

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Inhibiting spontaneous etching of nanoscale electron beam induced etching features: Solutions for nanoscale repair of extreme ultraviolet lithography masks

Matthew G. Lassiter; Ted Liang; Philip D. Rack

J. Vac. Sci. Technol. B 26, 963–967 (2008) https://doi.org/10.1116/1.2917076

Abstract

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Dependence of ${Zn}_{1 - x} {Mg}_{x} O : P$ film properties on magnesium concentration

H. S. Kim; F. Lugo; S. J. Pearton; D. P. Norton; F. Ren

J. Vac. Sci. Technol. B 26, 968–972 (2008) https://doi.org/10.1116/1.2917079

Abstract

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Fabrication of three-dimensional nanostructures by focused ion beam milling

R. W. Tjerkstra; F. B. Segerink; J. J. Kelly; W. L. Vos

J. Vac. Sci. Technol. B 26, 973–977 (2008) https://doi.org/10.1116/1.2912079

Abstract

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Conformal metal oxide coatings on nanotubes by direct low temperature metal-organic pyrolysis in supercritical carbon dioxide

Qing Peng; Joseph C. Spagnola; Hojo Daisuke; Kie Jin Park; Gregory N. Parsons

J. Vac. Sci. Technol. B 26, 978–982 (2008) https://doi.org/10.1116/1.2917072

Abstract

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Field emission properties of individual zinc oxide nanowire field emitter

K. S. Yeong; J. T. L. Thong

J. Vac. Sci. Technol. B 26, 983–989 (2008) https://doi.org/10.1116/1.2919146

Abstract

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Effects of laterally overgrown $n - Ga N$ thickness on defect and deep level concentrations

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. V. Markov; E. B. Yakimov; P. S. Vergeles; In-Hwan Lee; Cheul Ro Lee; S. J. Pearton

J. Vac. Sci. Technol. B 26, 990–994 (2008) https://doi.org/10.1116/1.2919148

Abstract

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Nitrogen and hydrogen plasma treatments of multiwalled carbon nanotubes

J. G. Jones; A. R. Waite; C. Muratore; A. A. Voevodin

J. Vac. Sci. Technol. B 26, 995–1000 (2008) https://doi.org/10.1116/1.2917068

Abstract

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Potential of pulsed electron-beam deposition for nanomaterial fabrication: Spatial distribution of deposited materials

A. Steigerwald; R. Mu

J. Vac. Sci. Technol. B 26, 1001–1005 (2008) https://doi.org/10.1116/1.2917081

Abstract

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Insights into the electron-field emission mechanism from nanostructured carbons: A multistep phenomenon and modeling

Sanju Gupta

J. Vac. Sci. Technol. B 26, 1006–1010 (2008) https://doi.org/10.1116/1.2919150

Abstract

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Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors

E. Pargon; M. Martin; J. Thiault; O. Joubert; J. Foucher; T. Lill

J. Vac. Sci. Technol. B 26, 1011–1020 (2008) https://doi.org/10.1116/1.2917071

Abstract

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Field emission properties of ZnO nanorods coated with NiO film

Ji Hoon Yang; Seung Youb Lee; Woo Seok Song; Yong Sook Shin; Chong-Yun Park; Hyun-Jin Kim; Wontae Cho; Ki-Seok An

J. Vac. Sci. Technol. B 26, 1021–1024 (2008) https://doi.org/10.1116/1.2919156

Abstract

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Observation and control of electrochemical etching effects in the fabrication of $In As ∕ Al Sb ∕ Ga Sb$ heterostructure devices

Ning Su; Yong Tang; Ze Zhang; T. F. Kuech; P. Fay

J. Vac. Sci. Technol. B 26, 1025–1029 (2008) https://doi.org/10.1116/1.2924328

Abstract

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Performance improvement of $Cu O_{x}$ with gradual oxygen concentration for nonvolatile memory application

P. Zhou; H. B. Lv; M. Yin; L. Tang; Y. L. Song; T. A. Tang; Y. Y. Lin; A. Bao; A. Wu; S. Cai; H. Wu; C. Liang; M. H. Chi

J. Vac. Sci. Technol. B 26, 1030–1032 (2008) https://doi.org/10.1116/1.2927922

Abstract

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Fully sealed carbon nanotube flat-panel light source and its application as thin film transistor–liquid-crystal display backlight

Yu Zhang; S. Z. Deng; N. S. Xu; Jun Chen

J. Vac. Sci. Technol. B 26, 1033–1037 (2008) https://doi.org/10.1116/1.2927920

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Supplementary Material

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Brief Reports and Comments

Field-emission cascades prepared by boron nitride cluster beam deposition

Fengqi Song; Feng Zhou; Min Han; Jianguo Wan; Zongwen Liu; Jianfeng Zhou; Guanghou Wang

J. Vac. Sci. Technol. B 26, 1038–1040 (2008) https://doi.org/10.1116/1.2912084

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PAPERS FROM THE 25th NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY

Nitrides

Molecular beam epitaxy III-nitride growth for polarization sensitive devices based on $M$ -plane films with in situ real time analysis by spectroscopic ellipsometry

C. Boney; P. Misra; R. Pillai; D. Starikov; A. Bensaoula

J. Vac. Sci. Technol. B 26, 1049–1052 (2008) https://doi.org/10.1116/1.2830628

Abstract

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Effects of bismuth on wide-depletion-width GaInNAs solar cells

A. J. Ptak; R. France; C.-S. Jiang; R. C. Reedy

J. Vac. Sci. Technol. B 26, 1053–1057 (2008) https://doi.org/10.1116/1.2837848

Abstract

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Role of ion damage on unintentional Ca incorporation during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides using $N_{2} ∕ Ar$ source gas mixtures

Michael M. Oye; Seth R. Bank; Aaron J. Ptak; Robert C. Reedy; Mark S. Goorsky; Archie L. Holmes, Jr.

J. Vac. Sci. Technol. B 26, 1058–1063 (2008) https://doi.org/10.1116/1.2924329

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Growth and structural characteristics of $Ga N ∕ Al N$ /nanothick $γ - {Al}_{2} O_{3} ∕ Si$ (111)

W. C. Lee; Y. J. Lee; L. T. Tung; S. Y. Wu; C. H. Lee; M. Hong; H. M. Ng; J. Kwo; C. H. Hsu

J. Vac. Sci. Technol. B 26, 1064–1067 (2008) https://doi.org/10.1116/1.2905241

Abstract

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Growth & Characterization

Real-time mass spectroscopy of reflected fluxes during molecular beam epitaxy growth of HgCdTe

R. H. Sewell; J. M. Dell; L. Faraone

J. Vac. Sci. Technol. B 26, 1068–1073 (2008) https://doi.org/10.1116/1.2841525

Abstract

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In situ molecular beam epitaxial growth of SiN films using a source port compatible electron-gun for silicon evaporation

W. E. Hoke; T. D. Kennedy; A. Torabi; K. Y. Vandermeulen; J. J. Mosca

J. Vac. Sci. Technol. B 26, 1074–1077 (2008) https://doi.org/10.1116/1.2870224

Abstract

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High electron mobility ${InAs}_{0.8} {Sb}_{0.2}$ grown on InP substrates by gas source molecular beam epitaxy

Chichih Liao; Bing-Ruey Wu; K. C. Hsieh; K. Y. Cheng

J. Vac. Sci. Technol. B 26, 1078–1080 (2008) https://doi.org/10.1116/1.2884738

Abstract

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Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice

T. V. Chandrasekhar Rao; J. Antoszewski; J. B. Rodriguez; E. Plis; S. Krishna; L. Faraone

J. Vac. Sci. Technol. B 26, 1081–1083 (2008) https://doi.org/10.1116/1.2839641

Abstract

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In(Ga, Al)As quantum dot/wire growth on InP

T. E. Tzeng; David J. Y. Feng; C. Y. Chen; T. S. Lay

J. Vac. Sci. Technol. B 26, 1084–1088 (2008) https://doi.org/10.1116/1.2902863

Abstract

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Temperature dependence of photoluminescence oxygen-related deep levels in ${Al}_{0.2} {Ga}_{0.3} {In}_{0.5} P : Be$ grown by solid source molecular beam epitaxy

C. Soubervielle-Montalvo; V. Mishournyi; I. C. Hernández; V. H. Méndez-García

J. Vac. Sci. Technol. B 26, 1089–1092 (2008) https://doi.org/10.1116/1.2891250

Abstract

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Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates

V. H. Méndez-García; M. G. Ramírez-Elías; A. Gorbatchev; E. Cruz-Hernández; J. S. Rojas-Ramírez; I. Martínez-Velis; L. Zamora-Peredo; M. López-López

J. Vac. Sci. Technol. B 26, 1093–1096 (2008) https://doi.org/10.1116/1.2884742

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Direct electron beam patterning and molecular beam epitaxy growth of InAs: Site definition of quantum dots

H. Yokota; K. Tsunashima; K. Iizuka; H. Okamoto

J. Vac. Sci. Technol. B 26, 1097–1099 (2008) https://doi.org/10.1116/1.2839675

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Improved quantum confinement of self-assembled high-density InAs quantum dot molecules in $Al Ga As ∕ Ga As$ quantum well structures by molecular beam epitaxy

N. Chit Swe; O. Tangmattajittakul; S. Suraprapapich; P. Changmoang; S. Thainoi; C. Wissawinthanon; S. Kanjanachuchai; S. Ratanathammaphan; S. Panyakeow

J. Vac. Sci. Technol. B 26, 1100–1104 (2008) https://doi.org/10.1116/1.2835064

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Selective growth of CdTe on patterned $Cd Te ∕ Si (211)$

T. Seldrum; R. Bommena; L. Samain; J. Dumont; S. Sivananthan; R. Sporken

J. Vac. Sci. Technol. B 26, 1105–1109 (2008) https://doi.org/10.1116/1.2912090

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Oxides & Novel Materials

Improved epitaxy of barium titanate by molecular beam epitaxy through a single crystalline magnesium oxide template for integration on hexagonal silicon carbide

T. L. Goodrich; Z. Cai; M. D. Losego; J.-P. Maria; L. Fitting Kourkoutis; D. A. Muller; K. S. Ziemer

J. Vac. Sci. Technol. B 26, 1110–1114 (2008) https://doi.org/10.1116/1.2889389

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Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

D. Lubyshev; J. M. Fastenau; Y. Wu; W. K. Liu; M. T. Bulsara; E. A. Fitzgerald; W. E. Hoke

J. Vac. Sci. Technol. B 26, 1115–1119 (2008) https://doi.org/10.1116/1.2884749

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Fabrication of periodically polarity-inverted ZnO films

T. Minegishi; A. Ishizawa; J. Kim; D. Kim; S. Ahn; S. Park; J. Park; I. Im; D. C. Oh; H. Nakano; K. Fujii; H. Jeon; T. Yao

J. Vac. Sci. Technol. B 26, 1120–1123 (2008) https://doi.org/10.1116/1.2905244

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High-quality nanothick single-crystal $Y_{2} O_{3}$ films epitaxially grown on Si (111): Growth and structural characteristics

Y. J. Lee; W. C. Lee; C. W. Nieh; Z. K. Yang; A. R. Kortan; M. Hong; J. Kwo; C.-H. Hsu

J. Vac. Sci. Technol. B 26, 1124–1127 (2008) https://doi.org/10.1116/1.2889387

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Molecular beam epitaxy grown ${Ga}_{2} O_{3} ({Gd}_{2} O_{3})$ high $κ$ dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics

C. H. Lee; T. D. Lin; L. T. Tung; M. L. Huang; M. Hong; J. Kwo

J. Vac. Sci. Technol. B 26, 1128–1131 (2008) https://doi.org/10.1116/1.2884752

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Oxide scalability in ${Al}_{2} O_{3} ∕ {Ga}_{2} O_{3} ({Gd}_{2} O_{3}) ∕ {In}_{0.20} {Ga}_{0.80} As ∕ Ga As$ heterostructures

K. H. Shiu; C. H. Chiang; Y. J. Lee; W. C. Lee; P. Chang; L. T. Tung; M. Hong; J. Kwo; W. Tsai

J. Vac. Sci. Technol. B 26, 1132–1135 (2008) https://doi.org/10.1116/1.2884739

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Detectors & Solar Cells

Low-strain $In As ∕ In Ga As ∕ Ga As$ quantum dots-in-a-well infrared photodetector

R. V. Shenoi; R. S. Attaluri; A. Siroya; J. Shao; Y. D. Sharma; A. Stintz; T. E. Vandervelde; S. Krishna

J. Vac. Sci. Technol. B 26, 1136–1139 (2008) https://doi.org/10.1116/1.2835063

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Tailoring detection wavelength of InGaAs quantum wire infrared photodetector

C. L. Tsai; K. Y. Cheng; S. T. Chou; S. Y. Lin; C. Xu; K. C. Hsieh

J. Vac. Sci. Technol. B 26, 1140–1144 (2008) https://doi.org/10.1116/1.2870225

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nBn detectors based on $In As ∕ Ga Sb$ type-II strain layer superlattice

G. Bishop; E. Plis; J. B. Rodriguez; Y. D. Sharma; H. S. Kim; L. R. Dawson; S. Krishna

J. Vac. Sci. Technol. B 26, 1145–1148 (2008) https://doi.org/10.1116/1.2830627

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Growth and characterization of $Ga {As}_{1 - x} {Sb}_{x}$ barrier layers for advanced concept solar cells

S. P. Bremner; G. M. Liu; N. Faleev; K. Ghosh; C. B. Honsberg

J. Vac. Sci. Technol. B 26, 1149–1152 (2008) https://doi.org/10.1116/1.2835062

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Lasers & Emitters

Molecular beam epitaxial growth and characteristics of $1.52 μ m$ metamorphic InAs quantum dot lasers on GaAs

Z. Mi; C. Wu; J. Yang; P. Bhattacharya

J. Vac. Sci. Technol. B 26, 1153–1156 (2008) https://doi.org/10.1116/1.2889386

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$In Ga As P ∕ In P$ buried-heterostructure laser diodes grown on InP using molecular beam epitaxy and metal-organic chemical vapor deposition

G. W. Pickrell; H. L. Zhang; H. W. Ren; D. Zhang; Q. Xue; K. A. Anselm; W. Y. Hwang

J. Vac. Sci. Technol. B 26, 1157–1159 (2008) https://doi.org/10.1116/1.2837840

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High-power, narrow-ridge, mid-infrared interband cascade lasers

C. L. Canedy; C. S. Kim; M. Kim; D. C. Larrabee; J. A. Nolde; W. W. Bewley; I. Vurgaftman; J. R. Meyer

J. Vac. Sci. Technol. B 26, 1160–1162 (2008) https://doi.org/10.1116/1.2884733

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$In Ga Al As ∕ In Ga As$ strain-balanced multi-quantum-well laser/semiconductor optical amplifiers operating at excited transitions

David J. Y. Feng; C. L. Chiu; S. H. Lin; T. S. Lay; T. Y. Chang

J. Vac. Sci. Technol. B 26, 1163–1166 (2008) https://doi.org/10.1116/1.2898494

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Manufacturing of laser diodes grown by molecular beam epitaxy for coarse wavelength division multiplexing systems

K. A. Anselm; W. Y. Hwang; H. W. Ren; D. Zhang; J. Um

J. Vac. Sci. Technol. B 26, 1167–1170 (2008) https://doi.org/10.1116/1.2837846

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Growth and characterization of ${Zn}_{x} {Cd}_{1 - x} Se ∕ {Zn}_{x^{'}} {Cd}_{y^{'}} {Mg}_{1 - x^{'} - y^{'}} Se$ asymmetric coupled quantum well structures for quantum cascade laser applications

W. O. Charles; A. Shen; K. Franz; C. Gmachl; Q. Zhang; Y. Gong; G. F. Neumark; Maria C. Tamargo

J. Vac. Sci. Technol. B 26, 1171–1173 (2008) https://doi.org/10.1116/1.2912085

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Transistors

Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection

M. A. Rowe; E. J. Gansen; M. B. Greene; D. Rosenberg; T. E. Harvey; M. Y. Su; R. H. Hadfield; S. W. Nam; R. P. Mirin

J. Vac. Sci. Technol. B 26, 1174–1177 (2008) https://doi.org/10.1116/1.2837839

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Si metal-oxide-semiconductor devices with high $κ$ $Hf O_{2}$ fabricated using a novel MBE template approach followed by atomic layer deposition

C. H. Pan; J. Kwo; K. Y. Lee; W. C. Lee; L. K. Chu; M. L. Huang; Y. J. Lee; M. Hong

J. Vac. Sci. Technol. B 26, 1178–1181 (2008) https://doi.org/10.1116/1.2912087

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Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on $Ge ∕ {Si}_{1 - x} {Ge}_{x} ∕ Si$ substrates with ${Al}_{2} O_{3}$ gate dielectric

D. Shahrjerdi; N. Nuntawong; G. Balakrishnan; D. I. Garcia-Gutierrez; A. Khoshakhlagh; E. Tutuc; D. Huffaker; J. C. Lee; S. K. Banerjee

J. Vac. Sci. Technol. B 26, 1182–1186 (2008) https://doi.org/10.1116/1.2835061

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Molecular beam epitaxy growth of InAs and ${In}_{0.8} {Ga}_{0.2} As$ channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications

Ning Li; Eric S. Harmon; David B. Salzman; Dmitri N. Zakharov; Jong-Hyeok Jeon; Eric Stach; Jerry M. Woodall; X. W. Wang; T. P. Ma; Fred Walker

J. Vac. Sci. Technol. B 26, 1187–1190 (2008) https://doi.org/10.1116/1.2912086

Abstract

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PAPERS FROM THE 25th NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY

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