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Review Article

Characterization of semiconducting polymers for thin film transistors

Michael L. Chabinyc

J. Vac. Sci. Technol. B 26, 445–457 (2008) https://doi.org/10.1116/1.2889407

Abstract

View articletitled, Characterization of semiconducting polymers for thin film transistors

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Nanoimprint lithography: An old story in modern times? A review

Helmut Schift

J. Vac. Sci. Technol. B 26, 458–480 (2008) https://doi.org/10.1116/1.2890972

Abstract

View articletitled, Nanoimprint lithography: An old story in modern times? A review

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Regular Articles

Fabrication process for cantilevers with integrated tunnel junctions

S. M. Tanner; C. T. Rogers

J. Vac. Sci. Technol. B 26, 481–486 (2008) https://doi.org/10.1116/1.2836428

Abstract

View articletitled, Fabrication process for cantilevers with integrated tunnel junctions

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SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices

L. F. Voss; K. Ip; S. J. Pearton; R. J. Shul; M. E. Overberg; A. G. Baca; C. Sanchez; J. Stevens; M. Martinez; M. G. Armendariz; G. A. Wouters

J. Vac. Sci. Technol. B 26, 487–494 (2008) https://doi.org/10.1116/1.2837849

Abstract

View articletitled, SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices

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Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

Madambi K. Jayaraj; Kachirayil J. Saji; Kenji Nomura; Toshio Kamiya; Hideo Hosono

J. Vac. Sci. Technol. B 26, 495–501 (2008) https://doi.org/10.1116/1.2839860

Abstract

View articletitled, Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

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Improvement on cold carbon field-electron emitter for commercial x-ray tube

Q. N. Lv; D. A. Wang; T. X. Li; Z. M. Ju; G. Y. Liu; S. H. Xia; Y. G. Ding; H. Y. Li

J. Vac. Sci. Technol. B 26, 502–505 (2008) https://doi.org/10.1116/1.2839861

Abstract

View articletitled, Improvement on cold carbon field-electron emitter for commercial x-ray tube

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The effect of added salts on the optical properties of water for high index immersion lithography fluids

J. Christopher Taylor; Elizabeth A. Costner; Sumarlin Goh; William Wojtczak; Dean Dewulf; C. Grant Willson

J. Vac. Sci. Technol. B 26, 506–513 (2008) https://doi.org/10.1116/1.2839863

Abstract

View articletitled, The effect of added salts on the optical properties of water for high index immersion lithography fluids

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Multilayer soft mold for UV imprinting the $50 nm$ pitch dot array

Duhyun Lee; E. H. Cho; H. S. Kim; B. K. Lee; M. B Lee; J. S. Sohn; C. H. Lee; S. J. Suh

J. Vac. Sci. Technol. B 26, 514–517 (2008) https://doi.org/10.1116/1.2839880

Abstract

View articletitled, Multilayer soft mold for UV imprinting the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>50</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> pitch dot array

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Electrical biasing and time dependent evolution of defects in poly(triphenylamine)-butane vinyl organic semiconductor devices

R. A. B. Devine; Fei Wang; R. D. Rauh

J. Vac. Sci. Technol. B 26, 518–524 (2008) https://doi.org/10.1116/1.2842300

Abstract

View articletitled, Electrical biasing and time dependent evolution of defects in poly(triphenylamine)-butane vinyl organic semiconductor devices

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Defects in CdHgTe grown by molecular beam epitaxy on (211)B-oriented CdZnTe substrates

E. Selvig; C. R. Tonheim; K. O. Kongshaug; T. Skauli; H. Hemmen; T. Lorentzen; R. Haakenaasen

J. Vac. Sci. Technol. B 26, 525–533 (2008) https://doi.org/10.1116/1.2868782

Abstract

View articletitled, Defects in CdHgTe grown by molecular beam epitaxy on (211)B-oriented CdZnTe substrates

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Optimization of resolution-enhancement technology and dual-layer bottom-antireflective coatings in hypernumerical aperture lithography

Yanqiu Li; Yuan Zhou

J. Vac. Sci. Technol. B 26, 534–540 (2008) https://doi.org/10.1116/1.2870220

Abstract

View articletitled, Optimization of resolution-enhancement technology and dual-layer bottom-antireflective coatings in hypernumerical aperture lithography

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Silicon laterally resonant microcantilevers for absolute pressure measurement with integrated actuation and readout

M. Cocuzza; I. Ferrante; A. Ricci; E. Giuri; L. Scaltrito; D. Bich; A. Merialdo; P. Schina; R. Correale

J. Vac. Sci. Technol. B 26, 541–550 (2008) https://doi.org/10.1116/1.2870221

Abstract

View articletitled, Silicon laterally resonant microcantilevers for absolute pressure measurement with integrated actuation and readout

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Effects of Mo seeding on the formation of Si nanodots during low-energy ion bombardment

Gozde Ozaydin; Karl F. Ludwig, Jr.; Hua Zhou; Randall L. Headrick

J. Vac. Sci. Technol. B 26, 551–558 (2008) https://doi.org/10.1116/1.2870222

Abstract

View articletitled, Effects of Mo seeding on the formation of Si nanodots during low-energy ion bombardment

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Electrical properties of conductive and resistive ZnSe layers

D. C. Oh; I. H. Im; S. H. Park; T. Hanada; T. Yao; J. S. Song; J. H. Chang; H. Makino; C. S. Han; K. H. Koo

J. Vac. Sci. Technol. B 26, 559–565 (2008) https://doi.org/10.1116/1.2884758

Abstract

View articletitled, Electrical properties of conductive and resistive ZnSe layers

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Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon/silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique

O. S. Panwar; Nalin Rupesinghe; G. A. J. Amaratunga

J. Vac. Sci. Technol. B 26, 566–575 (2008) https://doi.org/10.1116/1.2884762

Abstract

View articletitled, Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon/silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique

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Comparison of deep silicon etching using ${SF}_{6} / C_{4} F_{8}$ and ${SF}_{6} / C_{4} F_{6}$ plasmas in the Bosch process

Hyongmoo Rhee; Hyeokkyu Kwon; Chang-Koo Kim; HyunJung Kim; Jaisuk Yoo; Yil Wook Kim

J. Vac. Sci. Technol. B 26, 576–581 (2008) https://doi.org/10.1116/1.2884763

Abstract

View articletitled, Comparison of deep silicon etching using <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SF</mtext></mrow><mn>6</mn></msub><mo>/</mo><msub><mtext>C</mtext><mn>4</mn></msub><msub><mtext>F</mtext><mn>8</mn></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>SF</mtext></mrow><mn>6</mn></msub><mo>/</mo><msub><mtext>C</mtext><mn>4</mn></msub><msub><mtext>F</mtext><mn>6</mn></msub></mrow></math> plasmas in the Bosch process

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High-aspect-ratio nanopillar structures fabricated by nanoimprinting with elongation phenomenon

Kosuke Kuwabara; Akihiro Miyauchi

J. Vac. Sci. Technol. B 26, 582–584 (2008) https://doi.org/10.1116/1.2889396

Abstract

View articletitled, High-aspect-ratio nanopillar structures fabricated by nanoimprinting with elongation phenomenon

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Indium-doped ZnO nanospirals synthesized by thermal evaporation

Hong Gao; Hong Ji; Xitian Zhang; Huiqing Lu; Yao Liang

J. Vac. Sci. Technol. B 26, 585–588 (2008) https://doi.org/10.1116/1.2889418

Abstract

View articletitled, Indium-doped ZnO nanospirals synthesized by thermal evaporation

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Route to production of suspended perforated membranes

D. B. Burckel; S. R. J. Brueck

J. Vac. Sci. Technol. B 26, 589–592 (2008) https://doi.org/10.1116/1.2889431

Abstract

View articletitled, Route to production of suspended perforated membranes

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Fabrication of suspended dielectric mirror structures via xenon difluoride etching of an amorphous germanium sacrificial layer

Garrett D. Cole; Elaine Behymer; Lynford L. Goddard; Tiziana C. Bond

J. Vac. Sci. Technol. B 26, 593–597 (2008) https://doi.org/10.1116/1.2890673

Abstract

View articletitled, Fabrication of suspended dielectric mirror structures via xenon difluoride etching of an amorphous germanium sacrificial layer

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Simulation study on stress and deformation of polymeric patterns during the demolding process in thermal imprint lithography

Zhichao Song; Junseo Choi; Byoung Hee You; Jaejong Lee; Sunggook Park

J. Vac. Sci. Technol. B 26, 598–605 (2008) https://doi.org/10.1116/1.2890693

Abstract

View articletitled, Simulation study on stress and deformation of polymeric patterns during the demolding process in thermal imprint lithography

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Patterning chalcogenide glass by direct resist-free thermal nanoimprint

M. Solmaz; H. Park; C. K. Madsen; X. Cheng

J. Vac. Sci. Technol. B 26, 606–610 (2008) https://doi.org/10.1116/1.2890699

Abstract

View articletitled, Patterning chalcogenide glass by direct resist-free thermal nanoimprint

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Assessment of the performance of scanning capacitance microscopy for $n$ -type gallium nitride

J. Sumner; R. A. Oliver; M. J. Kappers; C. J. Humphreys

J. Vac. Sci. Technol. B 26, 611–617 (2008) https://doi.org/10.1116/1.2890705

Abstract

View articletitled, Assessment of the performance of scanning capacitance microscopy for <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type gallium nitride

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Comparative study on temperature-dependent characteristics of $In P ∕ In Ga As$ single- and double-heterojunction bipolar transistors

Wei-Hsin Chen; Tzu-Pin Chen; Chi-Jhung Lee; Ching-Wen Hung; Kuei-Yi Chu; Li-Yang Chen; Tsung-Han Tsai; Wen-Chau Liu

J. Vac. Sci. Technol. B 26, 618–623 (2008) https://doi.org/10.1116/1.2890707

Abstract

View articletitled, Comparative study on temperature-dependent characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">P</mi><mo>∕</mo><mi mathvariant="normal">In</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> single- and double-heterojunction bipolar transistors

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Optimization of electrical characteristics of gadolinium $({Gd}_{2} O_{3})$ incorporated $Hf O_{2}$ GaAs $n$ -type metal-oxide semiconductor capacitors with silicon-interface-passivation layer

Sung Il Park; Injo Ok; Hyoung-Sub Kim; Feng Zhu; Manhong Zhang; Jung Hwan Yum; Zhao Han; Jack C. Lee

J. Vac. Sci. Technol. B 26, 624–626 (2008) https://doi.org/10.1116/1.2890708

Abstract

View articletitled, Optimization of electrical characteristics of gadolinium <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mo>(</mo><msub><mi mathvariant="normal">Gd</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mo>)</mo></mrow></math> incorporated <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> GaAs <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer

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Characteristics of an $InGaP / {Al}_{X} {Ga}_{1 - X} As / GaAs$ composite-emitter heterojunction bipolar transistor (CEHBT)

Shiou-Ying Cheng; Kuei-Yi Chu; Li-Yang Chen; Lu-An Chen; Wen-Chau Liu

J. Vac. Sci. Technol. B 26, 627–631 (2008) https://doi.org/10.1116/1.2897318

Abstract

View articletitled, Characteristics of an <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>InGaP</mtext><mo>/</mo><msub><mrow><mtext>Al</mtext></mrow><mi>X</mi></msub><msub><mrow><mtext>Ga</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mi>X</mi></mrow></msub><mtext>As</mtext><mo>/</mo><mtext>GaAs</mtext></mrow></math> composite-emitter heterojunction bipolar transistor (CEHBT)

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Three-dimensional metal patterning over nanostructures by reversal imprint

C. Peng; B. L. Cardozo; S. W. Pang

J. Vac. Sci. Technol. B 26, 632–635 (2008) https://doi.org/10.1116/1.2897319

Abstract

View articletitled, Three-dimensional metal patterning over nanostructures by reversal imprint

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Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb $p - i - n$ diodes

F. M. Mohammedy; O. Hulko; B. J. Robinson; D. A. Thompson; M. J. Deen

J. Vac. Sci. Technol. B 26, 636–642 (2008) https://doi.org/10.1116/1.2898493

Abstract

View articletitled, Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>-</mtext><mi>i</mi><mtext>-</mtext><mi>n</mi></mrow></math> diodes

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Novel method for measuring nanofriction by atomic force microscope

M. C. Salvadori; F. S. Lisboa; F. M. Fernandes; I. G. Brown

J. Vac. Sci. Technol. B 26, 643–650 (2008) https://doi.org/10.1116/1.2890694

Abstract

View articletitled, Novel method for measuring nanofriction by atomic force microscope

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Enhanced growth of anodic alumina nanochannels on Ga-ion pre-irradiated aluminum

C. Y. Liu; A. Datta; N. W. Liu; Y. R. Wu; H. H. Wang; T. H. Chuang; Y. L. Wang

J. Vac. Sci. Technol. B 26, 651–654 (2008) https://doi.org/10.1116/1.2890706

Abstract

View articletitled, Enhanced growth of anodic alumina nanochannels on Ga-ion pre-irradiated aluminum

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Electron optics of microlenses with inclined beams

Y. Zhang; J. E. Barth; P. Kruit

J. Vac. Sci. Technol. B 26, 655–660 (2008) https://doi.org/10.1116/1.2897321

Abstract

View articletitled, Electron optics of microlenses with inclined beams

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Picocalorimetric method for DNA sequencing

Hesaam Esfandyarpour; R. Fabian W. Pease; Ronald W. Davis

J. Vac. Sci. Technol. B 26, 661–665 (2008) https://doi.org/10.1116/1.2897322

Abstract

View articletitled, Picocalorimetric method for DNA sequencing

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Sidewall passivation assisted by a silicon coverplate during ${Cl}_{2} - H_{2}$ and HBr inductively coupled plasma etching of InP for photonic devices

S. Bouchoule; G. Patriarche; S. Guilet; L. Gatilova; L. Largeau; P. Chabert

J. Vac. Sci. Technol. B 26, 666–674 (2008) https://doi.org/10.1116/1.2898455

Abstract

View articletitled, Sidewall passivation assisted by a silicon coverplate during <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Cl</mi><mn>2</mn></msub><mo>–</mo><msub><mi mathvariant="normal">H</mi><mn>2</mn></msub></mrow></math> and HBr inductively coupled plasma etching of InP for photonic devices

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Synthesis of epitaxial silicon nanowires on Si(111) substrates using ultrahigh vacuum magnetron sputtering

X. W. Zhao; F. Y. Yang

J. Vac. Sci. Technol. B 26, 675–677 (2008) https://doi.org/10.1116/1.2898489

Abstract

View articletitled, Synthesis of epitaxial silicon nanowires on Si(111) substrates using ultrahigh vacuum magnetron sputtering

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Brief Reports and Comments

Ta nanotubes grown by glancing angle deposition

S. V. Kesapragada; P. R. Sotherland; D. Gall

J. Vac. Sci. Technol. B 26, 678–681 (2008) https://doi.org/10.1116/1.2842299

Abstract

View articletitled, Ta nanotubes grown by glancing angle deposition

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Deep-UV exposure of poly(methyl methacrylate) at 254 nm using low-pressure mercury vapor lamps

Robert W. Johnstone; Ian G. Foulds; M. Parameswaran

J. Vac. Sci. Technol. B 26, 682–685 (2008) https://doi.org/10.1116/1.2890688

Abstract

View articletitled, Deep-UV exposure of poly(methyl methacrylate) at 254 nm using low-pressure mercury vapor lamps

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PAPERS FROM THE 20th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE

Applications

Fabrication and operation of triode electron emitters as ion source for miniature mass spectrometer

Jung Bin Cho; Soonil Lee; Hyeun Joong Yoon; Sang Sik Yang; Ken Ha Koh

J. Vac. Sci. Technol. B 26, 689–693 (2008) https://doi.org/10.1116/1.2835065

Abstract

View articletitled, Fabrication and operation of triode electron emitters as ion source for miniature mass spectrometer

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Injection-locked millimeter wave oscillator based on field-emission cathodes

Ming-Chieh Lin; Pu-Shih Lu

J. Vac. Sci. Technol. B 26, 694–697 (2008) https://doi.org/10.1116/1.2897324

Abstract

View articletitled, Injection-locked millimeter wave oscillator based on field-emission cathodes

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Fabrication of field-emission cathode ray tube with a unique nanostructure carbon electron emitter

H. X. Wang; N. Jiang; H. Hiraki; Y. Harada; H. Zhang; J. Wang; M. Haba; A. Hiraki

J. Vac. Sci. Technol. B 26, 698–701 (2008) https://doi.org/10.1116/1.2837853

Abstract

View articletitled, Fabrication of field-emission cathode ray tube with a unique nanostructure carbon electron emitter

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Development of high spatial resolution x-ray radiography system equipped with multiwalled carbon nanotube field emission cathode

Ryosuke Yabushita; Koichi Hata

J. Vac. Sci. Technol. B 26, 702–705 (2008) https://doi.org/10.1116/1.2894879

Abstract

View articletitled, Development of high spatial resolution x-ray radiography system equipped with multiwalled carbon nanotube field emission cathode

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Carbon nanotube cold cathodes for application in low current x-ray tubes

Zhidan Li Tolt; Chris Mckenzie; Robert Espinosa; Scott Snyder; Marjorie Munson

J. Vac. Sci. Technol. B 26, 706–710 (2008) https://doi.org/10.1116/1.2802092

Abstract

View articletitled, Carbon nanotube cold cathodes for application in low current x-ray tubes

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Development of a super-high-sensitivity image sensor using $640 \times 480 pixel$ active-matrix high-efficiency electron emission device

Nobuyasu Negishi; Takanobu Sato; Youhei Matsuba; Ryota Tanaka; Tomonari Nakada; Kazuto Sakemura; Yoshiyuki Okuda; Atsushi Watanabe; Takamasa Yoshikawa; Kiyohide Ogasawara; Masakazu Nanba; Saburo Okazaki; Kenkichi Tanioka; Norifumi Egami; Nobuyoshi Koshida

J. Vac. Sci. Technol. B 26, 711–715 (2008) https://doi.org/10.1116/1.2894896

Abstract

View articletitled, Development of a super-high-sensitivity image sensor using <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>640</mn><mo>×</mo><mn>480</mn><mtext> </mtext><mtext>pixel</mtext></mrow></math> active-matrix high-efficiency electron emission device

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Characteristics of nanosilicon ballistic cold cathode in aqueous solutions as an active electrode

Toshiyuki Ohta; Bernard Gelloz; Nobuyoshi Koshida

J. Vac. Sci. Technol. B 26, 716–719 (2008) https://doi.org/10.1116/1.2837858

Abstract

View articletitled, Characteristics of nanosilicon ballistic cold cathode in aqueous solutions as an active electrode

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Evidence of electronic cooling from resonance states of nanocrystalline graphite field emitters

Heinz Busta; Kevin Tao; Alan Feinerman

J. Vac. Sci. Technol. B 26, 720–723 (2008) https://doi.org/10.1116/1.2837870

Abstract

View articletitled, Evidence of electronic cooling from resonance states of nanocrystalline graphite field emitters

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Field emission at nanometer distances for high-resolution positioning

A. J. le Fèbre; L. Abelmann; J. C. Lodder

J. Vac. Sci. Technol. B 26, 724–729 (2008) https://doi.org/10.1116/1.2894898

Abstract

View articletitled, Field emission at nanometer distances for high-resolution positioning

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Characterization

Combined x-ray photoelectron spectroscopy/ultraviolet photoelectron spectroscopy/field emission spectroscopy for characterization of electron-emission mechanism of diamond

H. Yamaguchi; Y. Kudo; T. Masuzawa; M. Kudo; T. Yamada; Y. Takakuwa; K. Okano

J. Vac. Sci. Technol. B 26, 730–734 (2008) https://doi.org/10.1116/1.2837872

Abstract

View articletitled, Combined x-ray photoelectron spectroscopy/ultraviolet photoelectron spectroscopy/field emission spectroscopy for characterization of electron-emission mechanism of diamond

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Scanning atom probe study of graphite nanofibers

O. Nishikawa; M. Taniguchi; M. Ushirozawa

J. Vac. Sci. Technol. B 26, 735–737 (2008) https://doi.org/10.1116/1.2824968

Abstract

View articletitled, Scanning atom probe study of graphite nanofibers

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Thermal-field treatment for creating single-crystal tungsten tips with ultimate sharpness

Shin Fujita; Hiroshi Shimoyama

J. Vac. Sci. Technol. B 26, 738–744 (2008) https://doi.org/10.1116/1.2835069

Abstract

View articletitled, Thermal-field treatment for creating single-crystal tungsten tips with ultimate sharpness

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Multi-walled nanotube polymer composite degradation under high emission current regime as revealed by mass spectrometry

E. O. Popov; A. A. Pashkevich; A. O. Pozdnyakov; O. F. Pozdnyakov

J. Vac. Sci. Technol. B 26, 745–750 (2008) https://doi.org/10.1116/1.2894895

Abstract

View articletitled, Multi-walled nanotube polymer composite degradation under high emission current regime as revealed by mass spectrometry

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Modification of the field enhancement factor for a field emitter with a surrounding electrode stabilized using a field effect transistor

Yoichiro Neo; Takahiro Matsumoto; Hidetaka Shimawaki; Hidenori Mimura; Kuniyoshi Yokoo

J. Vac. Sci. Technol. B 26, 751–754 (2008) https://doi.org/10.1116/1.2827502

Abstract

View articletitled, Modification of the field enhancement factor for a field emitter with a surrounding electrode stabilized using a field effect transistor

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Polymer embedded C nanopearls field emission cathodes for time of flight mass spectrometers

R. Mouton; V. Semet; D. Kilgour; M. D. Brookes; Vu Thien Binh

J. Vac. Sci. Technol. B 26, 755–759 (2008) https://doi.org/10.1116/1.2805247

Abstract

View articletitled, Polymer embedded C nanopearls field emission cathodes for time of flight mass spectrometers

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Relationship between field-emission characteristics and defects measured by Raman scattering in carbon-nanotube cathodes treated by plasma and laser

W. S. Kim; H. Oki; A. Kinoshita; K. Murakami; S. Abo; F. Wakaya; M. Takai

J. Vac. Sci. Technol. B 26, 760–763 (2008) https://doi.org/10.1116/1.2884853

Abstract

View articletitled, Relationship between field-emission characteristics and defects measured by Raman scattering in carbon-nanotube cathodes treated by plasma and laser

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Arrays

Field emission characteristics of a lanthanum monosulfide cold cathode array fabricated using microelectromechanical systems technology

M. Samiee; K. Garre; M. Cahay; P. B. Kosel; S. Fairchild; J. W. Fraser; D. J. Lockwood

J. Vac. Sci. Technol. B 26, 764–769 (2008) https://doi.org/10.1116/1.2837893

Abstract

View articletitled, Field emission characteristics of a lanthanum monosulfide cold cathode array fabricated using microelectromechanical systems technology

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One-dimensional combined field and thermionic emission model and comparison with experimental results

Xin He; John Scharer; John Booske; Sean Sengele

J. Vac. Sci. Technol. B 26, 770–777 (2008) https://doi.org/10.1116/1.2884755

Abstract

View articletitled, One-dimensional combined field and thermionic emission model and comparison with experimental results

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Field electron emission from free-standing flexible PDMS-supported carbon-nanotube-array films

Nguyen Tuan Hong; Jong Hyuk Yim; Ken Ha Koh; Soonil Lee; Phan Ngoc Minh; Phan Hong Khoi

J. Vac. Sci. Technol. B 26, 778–781 (2008) https://doi.org/10.1116/1.2827503

Abstract

View articletitled, Field electron emission from free-standing flexible PDMS-supported carbon-nanotube-array films

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Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device

Mitsuaki Takeuchi; Toshihiko Kojima; Atsushi Oowada; Yasuhito Gotoh; Masayoshi Nagao; Hiroshi Tsuji; Junzo Ishikawa; Sigeki Sakai; Tsunenobu Kimoto

J. Vac. Sci. Technol. B 26, 782–787 (2008) https://doi.org/10.1116/1.2897335

Abstract

View articletitled, Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device

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Theory

Physics of generalized Fowler-Nordheim-type equations

Richard G. Forbes

J. Vac. Sci. Technol. B 26, 788–793 (2008) https://doi.org/10.1116/1.2827505

Abstract

View articletitled, Physics of generalized Fowler-Nordheim-type equations

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Possibility of generating terahertz radiation by photomixing with clusters of carbon nanotubes

Mark J. Hagmann

J. Vac. Sci. Technol. B 26, 794–799 (2008) https://doi.org/10.1116/1.2837894

Abstract

View articletitled, Possibility of generating terahertz radiation by photomixing with clusters of carbon nanotubes

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Energy exchange in field emission from semiconductors

M. S. Chung; Y. J. Jang; A. Mayer; P. H. Cutler; N. M. Miskovsky; B. L. Weis

J. Vac. Sci. Technol. B 26, 800–805 (2008) https://doi.org/10.1116/1.2822944

Abstract

View articletitled, Energy exchange in field emission from semiconductors

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Modeling of linear carbon nanotube nanotriodes with improved field uniformity

D. Nicolaescu; V. Filip; Y. Gotoh; J. Ishikawa

J. Vac. Sci. Technol. B 26, 806–812 (2008) https://doi.org/10.1116/1.2831504

Abstract

View articletitled, Modeling of linear carbon nanotube nanotriodes with improved field uniformity

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Electroluminescence of silicon nanoclusters excited by tunneling carrier injection

Valeriu Filip; Hei Wong; C. K. Wong; Dan Nicolaescu

J. Vac. Sci. Technol. B 26, 813–820 (2008) https://doi.org/10.1116/1.2830626

Abstract

View articletitled, Electroluminescence of silicon nanoclusters excited by tunneling carrier injection

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Work functions of cathode surfaces with adsorbed atoms based on ab initio calculations

Ming-Chieh Lin; Ruei-Fu Jao; Wei-Chih Lin

J. Vac. Sci. Technol. B 26, 821–825 (2008) https://doi.org/10.1116/1.2830624

Abstract

View articletitled, Work functions of cathode surfaces with adsorbed atoms based on ab initio calculations

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Fitting nonlinear Fowler-Nordheim plots of field emission strips with a self-consistent parallel plane model

Ming-Chieh Lin; Yi-Huan Liao

J. Vac. Sci. Technol. B 26, 826–830 (2008) https://doi.org/10.1116/1.2839884

Abstract

View articletitled, Fitting nonlinear Fowler-Nordheim plots of field emission strips with a self-consistent parallel plane model

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Application of a general electron emission equation to surface nonuniformity and current density variation

Kevin L. Jensen; John J. Petillo; Eric J. Montgomery; Zhigang Pan; Donald W. Feldman; Patrick G. O’Shea; Nathan A. Moody; M. Cahay; Joan E. Yater; Jonathan L. Shaw

J. Vac. Sci. Technol. B 26, 831–837 (2008) https://doi.org/10.1116/1.2827508

Abstract

View articletitled, Application of a general electron emission equation to surface nonuniformity and current density variation

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Carbon Nanotubes

Toward a lateral carbon nanotube based field emission triode

A. H. Monica; M. Paranjape; G. L. Coles; S. J. Papadakis; R. Osiander

J. Vac. Sci. Technol. B 26, 838–841 (2008) https://doi.org/10.1116/1.2805248

Abstract

View articletitled, Toward a lateral carbon nanotube based field emission triode

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In situ field emission characterization of multiwalled carbon nanotubes

R. C. Smith; D. C. Cox; S. R. P. Silva

J. Vac. Sci. Technol. B 26, 842–846 (2008) https://doi.org/10.1116/1.2837895

Abstract

View articletitled, In situ field emission characterization of multiwalled carbon nanotubes

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Field emission properties of single-walled carbon nanotube with amphoteric doping by encapsulation of TTF and TCNQ

Jungwoo Lee; Wonjoo Lee; Kijo Sim; Sung-hwan Han; Whikun Yi

J. Vac. Sci. Technol. B 26, 847–850 (2008) https://doi.org/10.1116/1.2870223

Abstract

View articletitled, Field emission properties of single-walled carbon nanotube with amphoteric doping by encapsulation of TTF and TCNQ

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Fabrication of transparent single wall carbon nanotube films with low sheet resistance

Jong Hyuk Yim; Yong Seok Kim; Ken Ha Koh; Soonil Lee

J. Vac. Sci. Technol. B 26, 851–855 (2008) https://doi.org/10.1116/1.2827507

Abstract

View articletitled, Fabrication of transparent single wall carbon nanotube films with low sheet resistance

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Effect of electrical aging on field emission from carbon nanotube field emitter arrays

Je Hwang Ryu; Ki Seo Kim; Chang Seok Lee; Jin Jang; Kyu Chang Park

J. Vac. Sci. Technol. B 26, 856–859 (2008) https://doi.org/10.1116/1.2884757

Abstract

View articletitled, Effect of electrical aging on field emission from carbon nanotube field emitter arrays

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Novel Materials

Improving the electron emission properties of ion-beam-synthesized $Ag - Si O_{2}$ nanocomposites by pulsed laser annealing

W. M. Tsang; A. A. D. T. Adikaari; V. Stolojan; S. R. P. Silva

J. Vac. Sci. Technol. B 26, 860–863 (2008) https://doi.org/10.1116/1.2824970

Abstract

View articletitled, Improving the electron emission properties of ion-beam-synthesized <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ag</mi><mo>–</mo><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> nanocomposites by pulsed laser annealing

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Improvement of emission efficiency of nanocrystalline silicon planar cathodes

Hidetaka Shimawaki; Yochiro Neo; Hidenori Mimura; Katsuhisa Murakami; Fujio Wakaya; Mikio Takai

J. Vac. Sci. Technol. B 26, 864–867 (2008) https://doi.org/10.1116/1.2839886

Abstract

View articletitled, Improvement of emission efficiency of nanocrystalline silicon planar cathodes

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Cold field emission from HfC(310)

K. J. Kagarice; G. G. Magera; S. D. Pollard; W. A. Mackie

J. Vac. Sci. Technol. B 26, 868–871 (2008) https://doi.org/10.1116/1.2812535

Abstract

View articletitled, Cold field emission from HfC(310)

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Improved field emission characteristics of individual carbon nanotube coated with boron nitride nanofilm

Yuji Morihisa; Chiharu Kimura; Makoto Yukawa; Hidemitsu Aoki; Takumi Kobayashi; Shigeki Hayashi; Seiji Akita; Yoshikazu Nakayama; Takashi Sugino

J. Vac. Sci. Technol. B 26, 872–875 (2008) https://doi.org/10.1116/1.2822990

Abstract

View articletitled, Improved field emission characteristics of individual carbon nanotube coated with boron nitride nanofilm

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Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation

A. Oowada; M. Takeuchi; Y. Sakai; Y. Gotoh; M. Nagao; H. Tsuji; J. Ishikawa; S. Sakai; T. Kimoto

J. Vac. Sci. Technol. B 26, 876–879 (2008) https://doi.org/10.1116/1.2837896

Abstract

View articletitled, Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation

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Density control of carbon nanofibers on titanium buffer layer using electroplated Ni catalyst

Hyeong-Suk Yoo; Sang-Joo Lee; Seung-Ki Joo; Woo-Yong Sung

J. Vac. Sci. Technol. B 26, 880–884 (2008) https://doi.org/10.1116/1.2839888

Abstract

View articletitled, Density control of carbon nanofibers on titanium buffer layer using electroplated Ni catalyst

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Field emission properties of metallic nanostructures self-assembled on nanoporous alumina and silicon templates

M. Cahay; K. Garre; J. W. Fraser; D. J. Lockwood; V. Semet; Vu Thien Binh; B. Kanchibotla; S. Bandyopadhyay; L. Grazulis; B. Das

J. Vac. Sci. Technol. B 26, 885–890 (2008) https://doi.org/10.1116/1.2824979

Abstract

View articletitled, Field emission properties of metallic nanostructures self-assembled on nanoporous alumina and silicon templates

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Field emission from lanthanum monosulfide thin films grown on the (100) magnesium oxide substrates

S. Fairchild; M. Cahay; L. Grazulis; K. Garre; X. Wu; D. J. Lockwood; V. Semet; Vu Thien Binh

J. Vac. Sci. Technol. B 26, 891–897 (2008) https://doi.org/10.1116/1.2837909

Abstract

View articletitled, Field emission from lanthanum monosulfide thin films grown on the (100) magnesium oxide substrates

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Letters

Fabrication and characterization of $In Ga As P ∕ In P$ double shallow-ridge rectangular ring laser photonic integration circuits by cascade reactive ion etching/inductively coupled plasma etching

R. Zhang; Z. Ren; S. Yu

J. Vac. Sci. Technol. B 26, L23–L27 (2008) https://doi.org/10.1116/1.2839882

Abstract

View articletitled, Fabrication and characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mi mathvariant="normal">P</mi><mo>∕</mo><mi mathvariant="normal">In</mi><mi mathvariant="normal">P</mi></mrow></math> double shallow-ridge rectangular ring laser photonic integration circuits by cascade reactive ion etching/inductively coupled plasma etching

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Fabrication of nanopores with subnanometer precision on poly(methyl methacrylate) nanofibers by in situ electron beam irradiation

H. G. Duan; E. Q. Xie; L. Han

J. Vac. Sci. Technol. B 26, L28–L31 (2008) https://doi.org/10.1116/1.2894897

Abstract

View articletitled, Fabrication of nanopores with subnanometer precision on poly(methyl methacrylate) nanofibers by in situ electron beam irradiation

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