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Volume 26, Issue 1
January 2008
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Cover Image for Volume 26, Issue 1
All Issues
ISSN 1071-1023
EISSN 1520-8567

Regular Articles

Undercut structure fabricated by complementary-structure micropatterning technique for the passive-matrix display of organic light-emitting diodes
Rubo Xing; Yu Xuan; Dongge Ma; Yanchun Han
J. Vac. Sci. Technol. B 26, 1–5 (2008) https://doi.org/10.1116/1.2817622
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Fabrication and performance of nanoscale ultrasmooth programed defects for extreme ultraviolet lithography
D. L. Olynick; F. Salmassi; J. A. Liddle; P. B. Mirkarimi; E. Spiller; S. L. Baker; J. Robinson
J. Vac. Sci. Technol. B 26, 6–10 (2008) https://doi.org/10.1116/1.2817625
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Studies of fluorocarbon film deposition and its correlation with etched trench sidewall angle by employing a gap structure using C4F8∕Ar and CF4∕H2 based capacitively coupled plasmas
Li Ling; X. Hua; L. Zheng; G. S. Oehrlein; E. A. Hudson; P. Jiang
J. Vac. Sci. Technol. B 26, 11–22 (2008) https://doi.org/10.1116/1.2817627
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Mobility-diffusivity relationship for semiconductor nanowires
Arif Khan; S. Noor Mohammad
J. Vac. Sci. Technol. B 26, 23–27 (2008) https://doi.org/10.1116/1.2817628
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Double oxidation scheme for tunnel junction fabrication
T. Holmqvist; M. Meschke; J. P. Pekola
J. Vac. Sci. Technol. B 26, 28–31 (2008) https://doi.org/10.1116/1.2817629
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Turn-on field distribution of field-emitting sites in carbon nanotube film: Study with luminescent image
Weihua Liu; Fanguang Zeng; Li Xin; Changchun Zhu; Yongning He
J. Vac. Sci. Technol. B 26, 32–35 (2008) https://doi.org/10.1116/1.2817633
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Exposure latitude of deep-ultraviolet conformable contact photolithography
C. P. Fucetola; D. J. D. Carter; J. G. Goodberlet
J. Vac. Sci. Technol. B 26, 36–40 (2008) https://doi.org/10.1116/1.2817634
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Structural and electrical investigation of laser annealed (Pb,Sr)TiO3 thin films
Jyh-Liang Wang; Yi-Sheng Lai; Sz-Chian Liou; Bi-Shiou Chiou; Chueh-Kuei Jan; Huang-Chung Cheng
J. Vac. Sci. Technol. B 26, 41–46 (2008) https://doi.org/10.1116/1.2819255
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Enhanced local oxidation of silicon using a conducting atomic force microscope in water
A. M. Hilton; K. W. Jacobson; B. P. Lynch; G. J. Simpson
J. Vac. Sci. Technol. B 26, 47–51 (2008) https://doi.org/10.1116/1.2819256
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Optical properties of n-doped Ga1−xMnxN epitaxial layers grown by metal-organic chemical-vapor deposition in mid and far (5−50 μm) IR range
A. B. Weerasekara; Z. G. Hu; N. Dietz; A. G. U. Perera; A. Asghar; M. H. Kane; M. Strassburg; I. T. Ferguson
J. Vac. Sci. Technol. B 26, 52–55 (2008) https://doi.org/10.1116/1.2819259
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GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers
S.-Q. Yu; Y. Cao; S. R. Johnson; Y.-H. Zhang; Y.-Z. Huang
J. Vac. Sci. Technol. B 26, 56–61 (2008) https://doi.org/10.1116/1.2819260
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Grayscale lithography by a polymer photomask doped with laser dye
N. S. Korivi; Y. X. Zhou; L. Jiang
J. Vac. Sci. Technol. B 26, 62–66 (2008) https://doi.org/10.1116/1.2819261
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Improvement of the wiggling profile of spin-on carbon hard mask by H2 plasma treatment
M. Tadokoro; K. Yonekura; K. Yoshikawa; Y. Ono; T. Ishibashi; T. Hanawa; N. Fujiwara; T. Matsunobe; K. Matsuda
J. Vac. Sci. Technol. B 26, 67–71 (2008) https://doi.org/10.1116/1.2819262
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Nonlocal reduced boron diffusivity in silicon below strained Si1−xGex surfaces
Malcolm S. Carroll; Y. S. Suh; R. Levy
J. Vac. Sci. Technol. B 26, 72–75 (2008) https://doi.org/10.1116/1.2817631
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Nanostructuring GaN using microsphere lithography
W. N. Ng; C. H. Leung; P. T. Lai; H. W. Choi
J. Vac. Sci. Technol. B 26, 76–79 (2008) https://doi.org/10.1116/1.2819265
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Flare-variation compensation for 32nm line and space pattern for device manufacturing on extreme-ultraviolet lithography
H. Aoyama; N. Iriki; T. Tanaka
J. Vac. Sci. Technol. B 26, 80–83 (2008) https://doi.org/10.1116/1.2821953
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Potential of phase-shifted optical proximity correction for 65nm T-shaped pattern in high numerical aperture lithography
Songbo Gao; Yanqiu Li
J. Vac. Sci. Technol. B 26, 84–88 (2008) https://doi.org/10.1116/1.2823020
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Atomic diffusion and interface electronic structure at In0.49Ga0.51P∕GaAs heterojunctions
P. E. Smith; M. Lueck; S. A. Ringel; L. J. Brillson
J. Vac. Sci. Technol. B 26, 89–95 (2008) https://doi.org/10.1116/1.2823031
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Study of pretreatment prior to silicon-oxycarbide deposition on Cu interconnect
Chun-Chieh Huang; Jow-Lay Huang; Ying-Lang Wang; Kuang-Yao Lo
J. Vac. Sci. Technol. B 26, 96–101 (2008) https://doi.org/10.1116/1.2823054
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Surface structure characterization of nanodiamond thin film for electronic field emission applications
F. Y. Xie; W. G. Xie; J. Chen; X. Liu; D. Y. Lu; W. H. Zhang
J. Vac. Sci. Technol. B 26, 102–105 (2008) https://doi.org/10.1116/1.2825144
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Study of high-brightness flat-panel lighting source using carbon-nanotube cathode
Yu Zhang; S. Z. Deng; C. Y. Duan; Jun Chen; N. S. Xu
J. Vac. Sci. Technol. B 26, 106–109 (2008) https://doi.org/10.1116/1.2825145
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Effective energy densities in KrF excimer laser reformation as a sidewall smoothing technique
Eih-Zhe Liang; Shih-Che Hung; Ya-Ping Hsieh; Ching-Fuh Lin
J. Vac. Sci. Technol. B 26, 110–116 (2008) https://doi.org/10.1116/1.2825163
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Facet formation and lateral overgrowth of selective Ge epitaxy on SiO2-patterned Si(001) substrates
Ji-Soo Park; Jie Bai; Michael Curtin; Mark Carroll; Anthony Lochtefeld
J. Vac. Sci. Technol. B 26, 117–121 (2008) https://doi.org/10.1116/1.2825165
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Fabrication of silicon kinoform lenses for hard x-ray focusing by electron beam lithography and deep reactive ion etching
Aaron Stein; Kenneth Evans-Lutterodt; Natasha Bozovic; Ashley Taylor
J. Vac. Sci. Technol. B 26, 122–127 (2008) https://doi.org/10.1116/1.2825167
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Photoresist characterization using double exposures with interference lithography
Thomas B. O’Reilly; Henry I. Smith
J. Vac. Sci. Technol. B 26, 128–131 (2008) https://doi.org/10.1116/1.2825169
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Novel hydrostatic pressuring mechanism for soft UV-imprinting processes
Fang-Sung Cheng; Sen-Yeu Yang; Chien-Chang Chen
J. Vac. Sci. Technol. B 26, 132–136 (2008) https://doi.org/10.1116/1.2825170
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Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes
Myungsim Jun; Moongyu Jang; Yarkeon Kim; Cheljong Choi; Taeyoub Kim; Soonyoung Oh; Seongjae Lee
J. Vac. Sci. Technol. B 26, 137–140 (2008) https://doi.org/10.1116/1.2825172
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Effect of temperature on copper damascene chemical mechanical polishing process
Veera Raghava Kakireddy; Subrahmanya Mudhivarthi; Ashok Kumar
J. Vac. Sci. Technol. B 26, 141–150 (2008) https://doi.org/10.1116/1.2825143
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Patterned wafer defect density analysis of step and flash imprint lithography
I. McMackin; W. Martin; J. Perez; K. Selinidis; J. Maltabes; F. Xu; D. Resnick; S. V. Sreenivasan
J. Vac. Sci. Technol. B 26, 151–155 (2008) https://doi.org/10.1116/1.2825164
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Soft photocurable nanoimprint lithography for compound semiconductor nanostructures
K. Meneou; K. Y. Cheng
J. Vac. Sci. Technol. B 26, 156–158 (2008) https://doi.org/10.1116/1.2823035
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Electrical conductivity of ultra-thin silicon nanowires
Nabil Rochdi; Didier Tonneau; Franck Jandard; Hervé Dallaporta; Viatcheslav Safarov; Jacques Gautier
J. Vac. Sci. Technol. B 26, 159–163 (2008) https://doi.org/10.1116/1.2823056
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Erbium silicide formation and its contact properties on Si(100)
W. Huang; G. P. Ru; Y. L. Jiang; X. P. Qu; B. Z. Li; R. Liu; F. Lu
J. Vac. Sci. Technol. B 26, 164–170 (2008) https://doi.org/10.1116/1.2831485
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Luminescence uniformity studies on dendrite bamboo carbon submicron-tube field-emitter arrays
Xin Li; Fuqiang Ding; Weihua Liu; Yongning He; Changchun Zhu
J. Vac. Sci. Technol. B 26, 171–174 (2008) https://doi.org/10.1116/1.2831487
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Structural and electrical studies of conductive nanowires prepared by focused ion beam induced deposition
A. Reguer; F. Bedu; D. Tonneau; H. Dallaporta; M. Prestigiacomo; A. Houel; P. Sudraud
J. Vac. Sci. Technol. B 26, 175–180 (2008) https://doi.org/10.1116/1.2830630
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Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes
R. Ramos; G. Cunge; O. Joubert
J. Vac. Sci. Technol. B 26, 181–188 (2008) https://doi.org/10.1116/1.2830637
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Hybrid nanofabrication processes utilizing diblock copolymer nanotemplate prepared by self-assembled monolayer based surface neutralization
Su-Jin Kim; W. J. Maeng; S. K. Lee; D. H. Park; Sung Hwan Bang; Hyungjun Kim; Byeong-Hyeok Sohn
J. Vac. Sci. Technol. B 26, 189–194 (2008) https://doi.org/10.1116/1.2830693
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Measurements of local optical properties of Si-doped GaAs (110) surfaces using modulation scanning tunneling microscope cathodoluminescence spectroscopy
Kentaro Watanabe; Yoshiaki Nakamura; Masakazu Ichikawa
J. Vac. Sci. Technol. B 26, 195–200 (2008) https://doi.org/10.1116/1.2830640
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Inelastic deformability of nanopillar by focused-ion-beam chemical vapor deposition
Yoji Shibutani; Toshiyuki Yoshioka
J. Vac. Sci. Technol. B 26, 201–205 (2008) https://doi.org/10.1116/1.2830683
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Fabrication of single-crystalline LiTaO3 film on silicon substrate using thin film transfer technology
Weili Liu; Da Zhan; Xiaobo Ma; Zhitang Song; Songlin Feng
J. Vac. Sci. Technol. B 26, 206–208 (2008) https://doi.org/10.1116/1.2830691
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Description of field emission current/voltage characteristics in terms of scaled barrier field values (⁠f-values)
Richard G. Forbes
J. Vac. Sci. Technol. B 26, 209–213 (2008) https://doi.org/10.1116/1.2834563
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Low-temperature c-axis oriented growth of nanocrystalline ZnO thin films on Si substrates by plasma assisted pulsed laser deposition
J. Shao; Y. Q. Shen; J. Sun; N. Xu; D. Yu; Y. F. Lu; J. D. Wu
J. Vac. Sci. Technol. B 26, 214–218 (2008) https://doi.org/10.1116/1.2834567
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Mechanistic study of plasma damage of low k dielectric surfaces
J. Bao; H. Shi; J. Liu; H. Huang; P. S. Ho; M. D. Goodner; M. Moinpour; G. M. Kloster
J. Vac. Sci. Technol. B 26, 219–226 (2008) https://doi.org/10.1116/1.2834562
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Surface plasmon assisted contact scheme nanoscale photolithography using an UV lamp
Dongbing Shao; Shaochen Chen
J. Vac. Sci. Technol. B 26, 227–231 (2008) https://doi.org/10.1116/1.2834688
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Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2–HfO2–SiO2–Si stacks
Y. M. Strzhemechny; M. Bataiev; S. P. Tumakha; S. H. Goss; C. L. Hinkle; C. C. Fulton; G. Lucovsky; L. J. Brillson
J. Vac. Sci. Technol. B 26, 232–243 (2008) https://doi.org/10.1116/1.2830692
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Novel photocurable epoxy siloxane polymers for photolithography and imprint lithography applications
Pei-I Wang; O. Nalamasu; Rajat Ghoshal; Ram Ghoshal; Charles D. Schaper; Andrew Li; Toh-Ming Lu
J. Vac. Sci. Technol. B 26, 244–248 (2008) https://doi.org/10.1116/1.2834559
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Proximity effects in nanoscale patterning with high resolution electron beam induced deposition
Peter A. Crozier
J. Vac. Sci. Technol. B 26, 249–254 (2008) https://doi.org/10.1116/1.2834560
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Effect of bis-(3-sodiumsulfopropyl disulfide) byproducts on copper defects after chemical mechanical polishing
Chi-Cheng Hung; Wen-Hsi Lee; Shao-Yu Hu; Shih-Chieh Chang; Kei-Wei Chen; Ying-Lang Wang
J. Vac. Sci. Technol. B 26, 255–259 (2008) https://doi.org/10.1116/1.2834679
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Brief Reports and Comments

Hot embossing by Joule heating
J. C. Lee; I. C. Leu; K. L. Lai; M. H. Hon
J. Vac. Sci. Technol. B 26, 260–263 (2008) https://doi.org/10.1116/1.2834561
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INTERNATIONAL WORKSHOP ON INSIGHT IN SEMICONDUCTOR DEVICE FABRICATION, METROLOGY, AND MODELING (INSIGHT 2007)

Plenary Session
Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing
Hans-Joachim L. Gossmann
J. Vac. Sci. Technol. B 26, 267–272 (2008) https://doi.org/10.1116/1.2794741
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Simulation of doping profile formation: Historical evolution, and present strengths and weaknesses
C. Zechner; V. Moroz
J. Vac. Sci. Technol. B 26, 273–280 (2008) https://doi.org/10.1116/1.2778699
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Fabrication: Advanced Anneals and Implant
Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing
S. B. Felch; E. Collart; V. Parihar; S. Thirupapuliyur; R. Schreutelkamp; B. J. Pawlak; T. Hoffmann; S. Severi; P. Eyben; W. Vandervorst; T. Noda
J. Vac. Sci. Technol. B 26, 281–285 (2008) https://doi.org/10.1116/1.2831490
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Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing
V. Vervisch; H. Etienne; F. Torregrosa; L. Roux; L. Ottaviani; M. Pasquinelli; T. Sarnet; P. Delaporte
J. Vac. Sci. Technol. B 26, 286–292 (2008) https://doi.org/10.1116/1.2834555
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Optimum activation and diffusion with a combination of spike and flash annealing
S. Paul; W. Lerch; J. Chan; S. McCoy; J. Gelpey; F. Cristiano; F. Severac; P. F. Fazzini; D. Bolze
J. Vac. Sci. Technol. B 26, 293–297 (2008) https://doi.org/10.1116/1.2834556
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New Approaches to Dopant Profiling
Characterization of an ultrashallow junction structure using angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering
G. Saheli; G. Conti; Y. Uritsky; M. A. Foad; C. R. Brundle; P. Mack; D. Kouzminov; M. Werner; J. A. van den Berg
J. Vac. Sci. Technol. B 26, 298–304 (2008) https://doi.org/10.1116/1.2834689
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Poster Session
Bragg diffraction, synchrotron x-ray reflectance, and x-ray photoelectron spectroscopy studies of low temperature plasma oxidation of native SiO2 on silicon on insulator
M. Bhargava; W. Donner; A. K. Srivastava; J. C. Wolfe
J. Vac. Sci. Technol. B 26, 305–309 (2008) https://doi.org/10.1116/1.2790927
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Advances in optical carrier profiling through high-frequency modulated optical reflectance
Janusz Bogdanowicz; Fabian Dortu; Trudo Clarysse; Wilfried Vandervorst; Derrick Shaughnessy; Alex Salnik; Lena Nicolaides; Jon Opsal
J. Vac. Sci. Technol. B 26, 310–316 (2008) https://doi.org/10.1116/1.2819252
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Advanced carrier depth profiling on Si and Ge with micro four-point probe
Trudo Clarysse; Pierre Eyben; Brigitte Parmentier; Benny Van Daele; Alessandra Satta; Wilfried Vandervorst; Rong Lin; Dirch Hjorth Petersen; Peter Folmer Nielsen
J. Vac. Sci. Technol. B 26, 317–321 (2008) https://doi.org/10.1116/1.2802101
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Impact of band gap narrowing and surface recombination on photoelectrothermal modulated optical reflectance power curves
Fabian Dortu; Janusz Bogdanowicz; Trudo Clarysse; Wilfried Vandervorst
J. Vac. Sci. Technol. B 26, 322–332 (2008) https://doi.org/10.1116/1.2805253
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Effect of low Ge content on B diffusion in amorphous SiGe alloys
L. A. Edelman; R. G. Elliman; L. Rubin; L. Washington; K. S. Jones
J. Vac. Sci. Technol. B 26, 333–337 (2008) https://doi.org/10.1116/1.2781511
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Impact of the environmental conditions on the electrical characteristics of scanning spreading resistance microscopy
Pierre Eyben; Jay Mody; Sri Charan Vemula; Wilfried Vandervorst
J. Vac. Sci. Technol. B 26, 338–341 (2008) https://doi.org/10.1116/1.2805250
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Defect evolution after germanium preamorphization in silicon on insulator structures
P. F. Fazzini; F. Cristiano; C. Dupré; A. Claverie; T. Ernst; M. Gavelle
J. Vac. Sci. Technol. B 26, 342–346 (2008) https://doi.org/10.1116/1.2802099
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Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant
M. Kah; A. J. Smith; J. J. Hamilton; J. Sharp; S. H. Yeong; B. Colombeau; R. Gwilliam; R. P. Webb; K. J. Kirkby
J. Vac. Sci. Technol. B 26, 347–350 (2008) https://doi.org/10.1116/1.2816936
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Toward extending the capabilities of scanning spreading resistance microscopy for fin field-effect-transistor-based structures
Jay Mody; Pierre Eyben; Emmanuel Augendre; Olivier Richard; Wilfried Vandervorst
J. Vac. Sci. Technol. B 26, 351–356 (2008) https://doi.org/10.1116/1.2819254
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Level set modeling of the orientation dependence of solid phase epitaxial regrowth
Saurabh Morarka; N. G. Rudawski; Mark E. Law
J. Vac. Sci. Technol. B 26, 357–361 (2008) https://doi.org/10.1116/1.2823063
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Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctions
Dirch Hjorth Petersen; Rong Lin; Torben Mikael Hansen; Erik Rosseel; Wilfried Vandervorst; Christian Markvardsen; Daniel Kjær; Peter Folmer Nielsen
J. Vac. Sci. Technol. B 26, 362–367 (2008) https://doi.org/10.1116/1.2794743
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Boron cathodic arc as an ion source for shallow junction ion implantation of boron
J. M. Williams; C. C. Klepper; D. J. Chivers; R. C. Hazelton; J. J. Moschella
J. Vac. Sci. Technol. B 26, 368–372 (2008) https://doi.org/10.1116/1.2805255
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Defect Formation, Evolution, and Impact
Properties of ultralow energy boron implants using octadecaborane
M. S. Ameen; L. M. Rubin; M. A. Harris; C. Huynh
J. Vac. Sci. Technol. B 26, 373–376 (2008) https://doi.org/10.1116/1.2790925
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Evolution of fluorine and boron profiles during annealing in crystalline Si
Pedro López; Lourdes Pelaz; Ray Duffy; P. Meunier-Beillard; F. Roozeboom; K. van der Tak; P. Breimer; J. G. M. van Berkum; M. A. Verheijen; M. Kaiser
J. Vac. Sci. Technol. B 26, 377–381 (2008) https://doi.org/10.1116/1.2794738
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B clustering in amorphous Si
D. De Salvador; G. Bisognin; M. Di Marino; E. Napolitani; A. Carnera; S. Mirabella; E. Pecora; E. Bruno; F. Priolo; H. Graoui; M. A. Foad; F. Boscherini
J. Vac. Sci. Technol. B 26, 382–385 (2008) https://doi.org/10.1116/1.2781760
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He implantation to control B diffusion in crystalline and preamorphized Si
E. Bruno; S. Mirabella; F. Priolo; K. Kuitunen; F. Tuomisto; J. Slotte; F. Giannazzo; C. Bongiorno; V. Raineri; E. Napolitani
J. Vac. Sci. Technol. B 26, 386–390 (2008) https://doi.org/10.1116/1.2816927
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Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?
N. S. Bennett; A. J. Smith; R. M. Gwilliam; R. P. Webb; B. J. Sealy; N. E. B. Cowern; L. O’Reilly; P. J. McNally
J. Vac. Sci. Technol. B 26, 391–395 (2008) https://doi.org/10.1116/1.2816929
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Non-Planar Structures
Probing doping conformality in fin shaped field effect transistor structures using resistors
W. Vandervorst; M. Jurczak; J.-L. Everaert; B. J. Pawlak; R. Duffy; J.-I. Del-Agua-Bomiquel; T. Poon
J. Vac. Sci. Technol. B 26, 396–401 (2008) https://doi.org/10.1116/1.2789439
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Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance
R. Duffy; G. Curatola; B. J. Pawlak; G. Doornbos; K. van der Tak; P. Breimer; J. G. M. van Berkum; F. Roozeboom
J. Vac. Sci. Technol. B 26, 402–407 (2008) https://doi.org/10.1116/1.2816925
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High Resolution 2-D Metrology with SPM
Application of electron holography to analysis of submicron structures
M. A. Gribelyuk; A. G. Domenicucci; P. A. Ronsheim; J. S. McMurray; O. Gluschenkov
J. Vac. Sci. Technol. B 26, 408–414 (2008) https://doi.org/10.1116/1.2834558
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Carrier concentration profiling on oxidized surfaces of Si device cross sections by resonant electron tunneling scanning probe spectroscopy
L. Bolotov; M. Nishizawa; T. Kanayama; Y. Miura
J. Vac. Sci. Technol. B 26, 415–419 (2008) https://doi.org/10.1116/1.2802103
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Enhanced 1D Metrology
Insights in junction photovoltage based sheet resistance measurements for advanced complementary metal-oxide semiconductor
Trudo Clarysse; Alain Moussa; Thomas Zangerle; Frederic Schaus; Wilfried Vandervorst; Vladimir Faifer; Michael Current
J. Vac. Sci. Technol. B 26, 420–424 (2008) https://doi.org/10.1116/1.2805251
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Germanium
Defects in Ge and Si caused by 1MeV Si+ implantation
D. P. Hickey; Z. L. Bryan; K. S. Jones; R. G. Elliman; E. E. Haller
J. Vac. Sci. Technol. B 26, 425–429 (2008) https://doi.org/10.1116/1.2834557
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P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation
M. Posselt; B. Schmidt; W. Anwand; R. Grötzschel; V. Heera; A. Mücklich; C. Wündisch; W. Skorupa; H. Hortenbach; S. Gennaro; M. Bersani; D. Giubertoni; A. Möller; H. Bracht
J. Vac. Sci. Technol. B 26, 430–434 (2008) https://doi.org/10.1116/1.2805249
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Stress Effects
Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers
N. G. Rudawski; K. S. Jones; R. G. Elliman
J. Vac. Sci. Technol. B 26, 435–438 (2008) https://doi.org/10.1116/1.2775459
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Dissolution of extended defects in strained silicon
Victor Moroz; Ignacio Martin-Bragado; Susan Felch; Faran Nouri; Chris Olsen; Kevin S. Jones
J. Vac. Sci. Technol. B 26, 439–442 (2008) https://doi.org/10.1116/1.2778698
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Letters

Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition
Jung Hyeun Kim
J. Vac. Sci. Technol. B 26, L1–L6 (2008) https://doi.org/10.1116/1.2821735
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Fabrication of ideally ordered anodic porous alumina with large area by vacuum deposition of Al onto mold
Kazuyuki Nishio; Takashi Yanagishita; Sho Hatakeyama; Hiroaki Maegawa; Hideki Masuda
J. Vac. Sci. Technol. B 26, L10–L12 (2008) https://doi.org/10.1116/1.2821734
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Flexible polymeric rib waveguide with self-align couplers system
Cheng-Sheng Huang; Wei-Chih Wang
J. Vac. Sci. Technol. B 26, L13–L18 (2008) https://doi.org/10.1116/1.2830634
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Reducing imaging defects in high-resolution photolithography
Fei Wang; William A. Stanton
J. Vac. Sci. Technol. B 26, L19–L22 (2008) https://doi.org/10.1116/1.2834554
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Boron nanobelts grown under intensive ion bombardment
W. T. Li; R. Boswell; J. D. Fitz Gerald
J. Vac. Sci. Technol. B 26, L7–L9 (2008) https://doi.org/10.1116/1.2827498
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Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Exploring SiC CVD growth parameters compatible with remote epitaxy
Daniel J. Pennachio, Jenifer R. Hajzus, et al.
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