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July 2007
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Review Article
Long-term stability of Ru-based protection layers in extreme ultraviolet lithography: A surface science approach
J. Vac. Sci. Technol. B 25, 1123–1138 (2007)
https://doi.org/10.1116/1.2743648
Regular Articles
Etching with HF/pyridine-supercritical carbon dioxide solutions and resultant interfacial electronic properties
J. Vac. Sci. Technol. B 25, 1139–1142 (2007)
https://doi.org/10.1116/1.2743651
Adsorption mechanism of aligned single wall carbon nanotubes at well defined metal surfaces
J. Vac. Sci. Technol. B 25, 1143–1146 (2007)
https://doi.org/10.1116/1.2743652
Ultrahigh-resolution pattern using electron-beam lithography HF wet etching
J. Vac. Sci. Technol. B 25, 1147–1151 (2007)
https://doi.org/10.1116/1.2743653
Influence of substrate morphology on growth mode of thin organic films: An atomic force microscopy study
J. Vac. Sci. Technol. B 25, 1152–1155 (2007)
https://doi.org/10.1116/1.2743654
Direct-write trilayer technology for superconductor-insulator-normal metal tunnel junction fabrication
J. Vac. Sci. Technol. B 25, 1156–1160 (2007)
https://doi.org/10.1116/1.2743655
Proton exchange and diffusion in using inductance coupled high density plasma
J. Vac. Sci. Technol. B 25, 1161–1165 (2007)
https://doi.org/10.1116/1.2746052
Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma
J. Vac. Sci. Technol. B 25, 1166–1170 (2007)
https://doi.org/10.1116/1.2746331
Microfluidic encapsulated nanoelectromechanical resonators
Keith L. Aubin; Jingqing Huang; Seung-Min Park; Yanou Yang; Marianna Kondratovich; Harold G. Craighead; Bojan R. Ilic
J. Vac. Sci. Technol. B 25, 1171–1174 (2007)
https://doi.org/10.1116/1.2746333
Influence of field emission on agglomerated carbon nanotubes in pastes
J. Vac. Sci. Technol. B 25, 1175–1178 (2007)
https://doi.org/10.1116/1.2746335
Adhesion between template materials and UV-cured nanoimprint resists
J. Vac. Sci. Technol. B 25, 1179–1185 (2007)
https://doi.org/10.1116/1.2746336
Resonant cavity enhanced dots-in-a-well quantum dot infrared photodetector
J. Vac. Sci. Technol. B 25, 1186–1190 (2007)
https://doi.org/10.1116/1.2746054
Synthesis of carbon nanotubes: Controlled fabrication of intraconnects
J. Vac. Sci. Technol. B 25, 1191–1196 (2007)
https://doi.org/10.1116/1.2746332
Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials
Y.-L. D. Ho; R. Gibson; C. Y. Hu; M. J. Cryan; J. G. Rarity; P. J. Heard; J. A. Timpson; A. M. Fox; M. S. Skolnick; M. Hopkinson; A. Tahraoui
J. Vac. Sci. Technol. B 25, 1197–1202 (2007)
https://doi.org/10.1116/1.2749528
Thermal stability of rare-earth based ultrathin for high- dielectrics
J. Vac. Sci. Technol. B 25, 1203–1206 (2007)
https://doi.org/10.1116/1.2749526
Spreading of thin-film metal patterns deposited on nonplanar surfaces using a shadow mask micromachined in Si (110)
J. Vac. Sci. Technol. B 25, 1207–1216 (2007)
https://doi.org/10.1116/1.2747629
Conducting properties of suspended carbon nanotubes grown by thermal chemical vapor deposition
J. Vac. Sci. Technol. B 25, 1221–1226 (2007)
https://doi.org/10.1116/1.2749525
Conformal metal thin-film coatings in high-aspect-ratio trenches using a self-sputtered rf-driven plasma source
J. Vac. Sci. Technol. B 25, 1227–1230 (2007)
https://doi.org/10.1116/1.2749527
Low power and high speed phase-change memory devices with silicon-germanium heating layers
J. Vac. Sci. Technol. B 25, 1244–1248 (2007)
https://doi.org/10.1116/1.2752515
Field emission from randomly oriented ZnO nanowires
J. Vac. Sci. Technol. B 25, 1249–1252 (2007)
https://doi.org/10.1116/1.2752517
Capacitive and analytical approaches for the analysis of field emission from carbon nanotubes in a sphere-to-plane diode
J. Vac. Sci. Technol. B 25, 1253–1260 (2007)
https://doi.org/10.1116/1.2749524
Growth of carbon nanotubes with resist-assisted patterning process
J. Vac. Sci. Technol. B 25, 1261–1264 (2007)
https://doi.org/10.1116/1.2752513
Fermi gas energetics in low-dimensional metals of special geometry
J. Vac. Sci. Technol. B 25, 1270–1275 (2007)
https://doi.org/10.1116/1.2753852
Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth
Lei Zhu; M. Martin; M. Hollander; Y. Q. Wang; Q. Chen; K. Ma; X. K. Yu; J. R. Liu; Wei-Kan Chu; Lin Shao
J. Vac. Sci. Technol. B 25, 1276–1279 (2007)
https://doi.org/10.1116/1.2749529
Current spreading of III-nitride light-emitting diodes using plasma treatment
J. Vac. Sci. Technol. B 25, 1280–1283 (2007)
https://doi.org/10.1116/1.2753853
Multiplexed mass spectrometry for real-time sensing in a spatially programmable chemical vapor deposition reactor
Yuhong Cai; Laurent Henn-Lecordier; Gary W. Rubloff; Ramaswamy Sreenivasan; Jae-Ouk Choo; Raymond A. Adomaitis
J. Vac. Sci. Technol. B 25, 1288–1297 (2007)
https://doi.org/10.1116/1.2753851
Ultrathin decoupled plasma nitridation SiON gate dielectrics prepared with various rf powers
Chan-Yuan Hu; Shih-Chih Chen; Jone F. Chen; Shoou-Jinn Chang; Min-Hong Wang; Vita Yeh; Jung-Che Chen
J. Vac. Sci. Technol. B 25, 1298–1304 (2007)
https://doi.org/10.1116/1.2756545
Enhanced electrical and structural properties of stacked gate oxides on -type Si substrates
J. Vac. Sci. Technol. B 25, 1305–1309 (2007)
https://doi.org/10.1116/1.2756546
Observation of fringelike electron-emission pattern in field emission from Pt field emitter fabricated by electron-beam-induced deposition
J. Vac. Sci. Technol. B 25, 1310–1314 (2007)
https://doi.org/10.1116/1.2756550
Fabrication of complementary metal-oxide-semiconductor compatible semiconducting yttrium barium copper oxide uncooled infrared microbolometer arrays
J. Vac. Sci. Technol. B 25, 1315–1320 (2007)
https://doi.org/10.1116/1.2756551
Microstructuring by microcontact printing and selective surface dewetting
J. Vac. Sci. Technol. B 25, 1321–1326 (2007)
https://doi.org/10.1116/1.2756552
Fabrication and characterization of Si nanocrystals in SiC matrix produced by magnetron cosputtering
Dengyuan Song; Eun-Chel Cho; Gavin Conibeer; Young-Hyun Cho; Yidan Huang; Shujuan Huang; Chris Flynn; Martin A. Green
J. Vac. Sci. Technol. B 25, 1327–1335 (2007)
https://doi.org/10.1116/1.2756556
Evaluation of new materials for plasmonic imaging lithography at using near field scanning optical microscopy
Scott A. Backer; Itai Suez; Zachary M. Fresco; Jean M. J. Fréchet; Josh A. Conway; Shantha Vedantam; Hyojune Lee; Eli Yablonovitch
J. Vac. Sci. Technol. B 25, 1336–1339 (2007)
https://doi.org/10.1116/1.2757184
Analytic description of scanning capacitance microscopy
Hugues Murray; Rosine Germanicus; Aziz Doukkali; Patrick Martin; Bernadette Domenges; Philippe Descamps
J. Vac. Sci. Technol. B 25, 1340–1352 (2007)
https://doi.org/10.1116/1.2759218
Plasma-surface interactions of model polymers for advanced photoresists using discharges and energetic ion beams
S. Engelmann; R. L. Bruce; T. Kwon; R. Phaneuf; G. S. Oehrlein; Y. C. Bae; C. Andes; D. Graves; D. Nest; E. A. Hudson; P. Lazzeri; E. Iacob; M. Anderle
J. Vac. Sci. Technol. B 25, 1353–1364 (2007)
https://doi.org/10.1116/1.2759935
Development of certified reference materials of ion-implanted dopants in silicon for calibration of secondary ion mass spectrometers
D. S. Simons; R. G. Downing; G. P. Lamaze; R. M. Lindstrom; R. R. Greenberg; R. L. Paul; S. B. Schiller; W. F. Guthrie
J. Vac. Sci. Technol. B 25, 1365–1375 (2007)
https://doi.org/10.1116/1.2759937
High aspect ratio Bosch etching of sub- trenches for hyperintegration applications
J. Vac. Sci. Technol. B 25, 1376–1381 (2007)
https://doi.org/10.1116/1.2756554
compressive-strain multiple quantum well with -type modulation-doped GaInP intermediate-barrier laser diodes
J. Vac. Sci. Technol. B 25, 1382–1388 (2007)
https://doi.org/10.1116/1.2757183
Investigation of heteroepitaxial growth of magnetite thin films
J. Vac. Sci. Technol. B 25, 1389–1392 (2007)
https://doi.org/10.1116/1.2757185
Precise patterning of -based glass by low-temperature nanoimprint lithography assisted by UV irradiation on both faces using Glasia® as a precursor
Motoki Okinaka; Hiroshi Tsushima; Yoshifumi Ichinose; Emi Watanabe; Keiichi Yanagisawa; Kazuhito Tsukagoshi; Yoshinobu Aoyagi
J. Vac. Sci. Technol. B 25, 1393–1397 (2007)
https://doi.org/10.1116/1.2759936
Real-time in situ flux monitoring in molecular beam epitaxy by wavelength-modulated atomic absorption spectroscopy
J. Vac. Sci. Technol. B 25, 1398–1404 (2007)
https://doi.org/10.1116/1.2759948
Role of subsurface defects in metal- Schottky barrier formation
H. L. Mosbacker; S. El Hage; M. Gonzalez; S. A. Ringel; M. Hetzer; D. C. Look; G. Cantwell; J. Zhang; J. J. Song; L. J. Brillson
J. Vac. Sci. Technol. B 25, 1405–1411 (2007)
https://doi.org/10.1116/1.2756543
Brief Reports and Comments
Simple “solutal” method for preparing Teflon nanostructures and molds
J. Vac. Sci. Technol. B 25, 1412–1415 (2007)
https://doi.org/10.1116/1.2752511
Highly selective isotropic dry etch based nanofabrication
J. Vac. Sci. Technol. B 25, 1416–1419 (2007)
https://doi.org/10.1116/1.2756544
Extreme high vacuum field emission microscope for study on the inherent fluctuation of field emission
J. Vac. Sci. Technol. B 25, 1420–1423 (2007)
https://doi.org/10.1116/1.2757182
PAPERS FROM THE 34th ANNUAL CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES
Nanostructures
Analysis of local carrier modulation in InAs semiconductor nanowire transistors
J. Vac. Sci. Technol. B 25, 1427–1431 (2007)
https://doi.org/10.1116/1.2746355
Transport properties of InAs nanowire field effect transistors: The effects of surface states
J. Vac. Sci. Technol. B 25, 1432–1436 (2007)
https://doi.org/10.1116/1.2748410
Influence of interface roughness on quantum transport in nanoscale FinFET
J. Vac. Sci. Technol. B 25, 1437–1440 (2007)
https://doi.org/10.1116/1.2748414
Binding energy, vapor pressure, and melting point of semiconductor nanoparticles
J. Vac. Sci. Technol. B 25, 1441–1447 (2007)
https://doi.org/10.1116/1.2748415
Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)Si
J. Vac. Sci. Technol. B 25, 1448–1452 (2007)
https://doi.org/10.1116/1.2750345
Spintronics
Atomic ordering and interlayer diffusion of films grown on GaAs(001) studied by transmission electron microscopy
J. Vac. Sci. Technol. B 25, 1453–1459 (2007)
https://doi.org/10.1116/1.2748413
Structural, optical, and magnetic properties of multiple quantum well structures
J. Vac. Sci. Technol. B 25, 1460–1466 (2007)
https://doi.org/10.1116/1.2746344
Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 25, 1467–1469 (2007)
https://doi.org/10.1116/1.2746349
Magnetostructure of MnAs on GaAs revisited
J. Vac. Sci. Technol. B 25, 1470–1475 (2007)
https://doi.org/10.1116/1.2746353
Anomalous Mn depth profiles for thin films grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 25, 1476–1480 (2007)
https://doi.org/10.1116/1.2746351
Surfaces and Interfaces, including Passivation
Formation of ultrathin interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high- dielectrics
J. Vac. Sci. Technol. B 25, 1481–1490 (2007)
https://doi.org/10.1116/1.2750344
Metal gate metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition
InJo Ok; H. Kim; M. Zhang; F. Zhu; S. Park; J. Yum; S. Koveshnikov; W. Tsai; V. Tokranov; M. Yakimov; S. Oktyabrsky; Jack C. Lee
J. Vac. Sci. Technol. B 25, 1491–1494 (2007)
https://doi.org/10.1116/1.2746348
Hydrogen sensing characteristics and mechanism of Schottky diodes subjected to oxygen gettering
J. Vac. Sci. Technol. B 25, 1495–1503 (2007)
https://doi.org/10.1116/1.2750343
Functionalization and characterization of InAs and InP surfaces with hemin
Michael A. Garcia; Maria Losurdo; Scott D. Wolter; Tong-Ho Kim; W. V. Lampert; Joseph Bonaventura; Giovanni Bruno; Maria Giangregorio; April Brown
J. Vac. Sci. Technol. B 25, 1504–1510 (2007)
https://doi.org/10.1116/1.2746337
Atomic structure of : Confirmation of the structural model having two kinds of chains through homoepitaxy at
J. Vac. Sci. Technol. B 25, 1511–1515 (2007)
https://doi.org/10.1116/1.2746345
Complex Oxides
Selective growth of iron oxide thin films using the combined method of metal-organic chemical vapor deposition and microcontact printing
J. Vac. Sci. Technol. B 25, 1516–1519 (2007)
https://doi.org/10.1116/1.2746338
Epitaxial on characterized by transmission electron microscopy
J. Vac. Sci. Technol. B 25, 1520–1523 (2007)
https://doi.org/10.1116/1.2748412
Radiative and nonradiative lifetimes in nonpolar -plane multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
T. Onuma; T. Koyama; A. Chakraborty; M. McLaurin; B. A. Haskell; P. T. Fini; S. Keller; S. P. DenBaars; J. S. Speck; S. Nakamura; U. K. Mishra; T. Sota; S. F. Chichibu
J. Vac. Sci. Technol. B 25, 1524–1528 (2007)
https://doi.org/10.1116/1.2746354
Nitrides
Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region
J. Vac. Sci. Technol. B 25, 1529–1532 (2007)
https://doi.org/10.1116/1.2746343
Interface and optical properties of quantum wells on GaAs (411) substrates by molecular beam epitaxy
J. Vac. Sci. Technol. B 25, 1533–1535 (2007)
https://doi.org/10.1116/1.2748411
Formation of (Zn,Co)O by annealing of Co overlayers on ZnO
J. Vac. Sci. Technol. B 25, 1536–1541 (2007)
https://doi.org/10.1116/1.2746339
Letters
Band gap narrowing of ZnO:N films by varying rf sputtering power in mixtures
J. Vac. Sci. Technol. B 25, L23–L26 (2007)
https://doi.org/10.1116/1.2746053
Glass nanostructures fabricated by soft thermal nanoimprint
J. Vac. Sci. Technol. B 25, L27–L30 (2007)
https://doi.org/10.1116/1.2748791
Nanoimprint fabrication of polymer cell substrates with combined microscale and nanoscale topography
J. Vac. Sci. Technol. B 25, L31–L34 (2007)
https://doi.org/10.1116/1.2748792
Polymer through-hole membrane fabricated by nanoimprinting using metal molds with high aspect ratios
J. Vac. Sci. Technol. B 25, L35–L38 (2007)
https://doi.org/10.1116/1.2753847
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Science challenges and research opportunities for plasma applications in microelectronics
David B. Graves, Catherine B. Labelle, et al.
Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications
A. S. Stodolna, T. W. Mechielsen, et al.