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May 2007

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

Regular Articles

Intermediate-layer lithography method for producing metal micropatterns

Xinchuan Liu; Cheng Luo

J. Vac. Sci. Technol. B 25, 677–685 (2007) https://doi.org/10.1116/1.2718961

Abstract

View articletitled, Intermediate-layer lithography method for producing metal micropatterns

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Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; V. I. Vdovin; A. V. Markov; A. A. Shlensky; Ed Prebble; Drew Hanser; J. M. Zavada; S. J. Pearton

J. Vac. Sci. Technol. B 25, 686–690 (2007) https://doi.org/10.1116/1.2718962

Abstract

View articletitled, Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy

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Comprehensive investigation on emitter ledge length of $In Ga P ∕ Ga As$ heterojunction bipolar transistors

Ssu-I Fu; Rong-Chau Liu; Shiou-Ying Cheng; Po-Hsien Lai; Yan-Ying Tsai; Ching-Wen Hung; Tzu-Pin Chen; Wen-Chau Liu

J. Vac. Sci. Technol. B 25, 691–696 (2007) https://doi.org/10.1116/1.2723746

Abstract

View articletitled, Comprehensive investigation on emitter ledge length of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">P</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> heterojunction bipolar transistors

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Crystallographic wing tilt and thermal-stress distribution of GaN laterally overgrown on maskless V-grooved sapphire substrate by metal-organic chemical vapor deposition

Zhigang Xing; J. Wang; Y. Wang; X. H. Wang; Z. T. Zhou; H. Chen; J. M. Zhou

J. Vac. Sci. Technol. B 25, 697–702 (2007) https://doi.org/10.1116/1.2723748

Abstract

View articletitled, Crystallographic wing tilt and thermal-stress distribution of GaN laterally overgrown on maskless V-grooved sapphire substrate by metal-organic chemical vapor deposition

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Experimental investigation of micro-mesoscale Knudsen compressor performance at low pressures

Y.-L. Han; E. P. Muntz

J. Vac. Sci. Technol. B 25, 703–714 (2007) https://doi.org/10.1116/1.2723755

Abstract

View articletitled, Experimental investigation of micro-mesoscale Knudsen compressor performance at low pressures

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Etch mechanisms of hybrid low- $k$ material (SiOCH with porogen) in fluorocarbon based plasma

D. Eon; M. Darnon; T. Chevolleau; T. David; L. Vallier; O. Joubert

J. Vac. Sci. Technol. B 25, 715–720 (2007) https://doi.org/10.1116/1.2723756

Abstract

View articletitled, Etch mechanisms of hybrid low-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> material (SiOCH with porogen) in fluorocarbon based plasma

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Fabrication of GaN suspended photonic crystal membranes and resonant nanocavities on Si(111)

A. Rosenberg; K. Bussmann; Mijin Kim; Michael W. Carter; M. A. Mastro; Ronald T. Holm; Richard L. Henry; Joshua D. Caldwell; Charles R. Eddy, Jr.

J. Vac. Sci. Technol. B 25, 721–724 (2007) https://doi.org/10.1116/1.2723750

Abstract

View articletitled, Fabrication of GaN suspended photonic crystal membranes and resonant nanocavities on Si(111)

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Manufacturing method for the fabrication of sub- $50 nm$ current-perpendicular-to-plane spin valve sensors

G. C. Han; K. B. Li; Y. K. Zheng; J. J. Qiu; P. Luo; L. H. An; Z. B. Guo; Z. Y. Liu; Y. H. Wu

J. Vac. Sci. Technol. B 25, 725–729 (2007) https://doi.org/10.1116/1.2719200

Abstract

View articletitled, Manufacturing method for the fabrication of sub-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>50</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> current-perpendicular-to-plane spin valve sensors

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Fabrication of suspended single crystal diamond devices by electrochemical etch

C. F. Wang; E. L. Hu; J. Yang; J. E. Butler

J. Vac. Sci. Technol. B 25, 730–733 (2007) https://doi.org/10.1116/1.2731327

Abstract

View articletitled, Fabrication of suspended single crystal diamond devices by electrochemical etch

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Improved performance of a dual-passivated heterojunction bipolar transistor

Shiou-Ying Cheng; Ssu-I Fu; Wen-Chau Liu

J. Vac. Sci. Technol. B 25, 734–738 (2007) https://doi.org/10.1116/1.2731331

Abstract

View articletitled, Improved performance of a dual-passivated heterojunction bipolar transistor

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Profile control of novel non-Si gates using $B {Cl}_{3} ∕ N_{2}$ plasma

Denis Shamiryan; Vasile Paraschiv; Salvador Eslava-Fernandez; Marc Demand; Mikhail Baklanov; Stephan Beckx; Werner Boullart

J. Vac. Sci. Technol. B 25, 739–744 (2007) https://doi.org/10.1116/1.2731333

Abstract

View articletitled, Profile control of novel non-Si gates using <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">B</mi><msub><mi mathvariant="normal">Cl</mi><mn>3</mn></msub><mo>∕</mo><msub><mi mathvariant="normal">N</mi><mn>2</mn></msub></mrow></math> plasma

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Nanoscale resist morphologies of dense gratings using electron-beam lithography

M. A. Mohammad; S. K. Dew; K. Westra; P. Li; M. Aktary; Y. Lauw; A. Kovalenko; M. Stepanova

J. Vac. Sci. Technol. B 25, 745–753 (2007) https://doi.org/10.1116/1.2731330

Abstract

View articletitled, Nanoscale resist morphologies of dense gratings using electron-beam lithography

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Epitaxial growth of ${Sc}_{2} O_{3}$ films on GaN (0001) by pulsed laser deposition

Chang Liu; Eng Fong Chor; Leng Seow Tan; Anyan Du

J. Vac. Sci. Technol. B 25, 754–759 (2007) https://doi.org/10.1116/1.2731332

Abstract

View articletitled, Epitaxial growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Sc</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> films on GaN (0001) by pulsed laser deposition

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Low-damage fabrication of high aspect nanocolumns by using neutral beams and ferritin-iron-core mask

Tomohiro Kubota; Tomohiro Baba; Suguru Saito; Satoshi Yamasaki; Shinya Kumagai; Takuo Matsui; Yukiharu Uraoka; Takashi Fuyuki; Ichiro Yamashita; Seiji Samukawa

J. Vac. Sci. Technol. B 25, 760–766 (2007) https://doi.org/10.1116/1.2732734

Abstract

View articletitled, Low-damage fabrication of high aspect nanocolumns by using neutral beams and ferritin-iron-core mask

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Poly- $Si ∕ Ti N ∕ Hf O_{2}$ gate stack etching in high-density plasmas

A. Le Gouil; O. Joubert; G. Cunge; T. Chevolleau; L. Vallier; B. Chenevier; I. Matko

J. Vac. Sci. Technol. B 25, 767–778 (2007) https://doi.org/10.1116/1.2732736

Abstract

View articletitled, Poly-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><mo>∕</mo><mi mathvariant="normal">Ti</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> gate stack etching in high-density plasmas

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Study of photoresist etching and roughness formation in electron-beam generated plasmas

Bryan J. Orf; Scott G. Walton; Darrin Leonhardt; Gottlieb S. Oehrlein

J. Vac. Sci. Technol. B 25, 779–784 (2007) https://doi.org/10.1116/1.2732741

Abstract

View articletitled, Study of photoresist etching and roughness formation in electron-beam generated plasmas

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UV nanoimprint materials: Surface energies, residual layers, and imprint quality

H. Schmitt; L. Frey; H. Ryssel; M. Rommel; C. Lehrer

J. Vac. Sci. Technol. B 25, 785–790 (2007) https://doi.org/10.1116/1.2732742

Abstract

View articletitled, UV nanoimprint materials: Surface energies, residual layers, and imprint quality

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Formation and morphology of InGaN nanoislands on GaN(0001)

S. Gangopadhyay; Th. Schmidt; S. Einfeldt; T. Yamaguchi; D. Hommel; J. Falta

J. Vac. Sci. Technol. B 25, 791–795 (2007) https://doi.org/10.1116/1.2734156

Abstract

View articletitled, Formation and morphology of InGaN nanoislands on GaN(0001)

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Sn quantum dots embedded in $Si O_{2}$ formed by low energy ion implantation

J. P. Zhao; Y. Meng; D. X. Huang; W. K. Chu; J. W. Rabalais

J. Vac. Sci. Technol. B 25, 796–800 (2007) https://doi.org/10.1116/1.2723752

Abstract

View articletitled, Sn quantum dots embedded in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> formed by low energy ion implantation

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Mask material effects in cryogenic deep reactive ion etching

L. Sainiemi; S. Franssila

J. Vac. Sci. Technol. B 25, 801–807 (2007) https://doi.org/10.1116/1.2734157

Abstract

View articletitled, Mask material effects in cryogenic deep reactive ion etching

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Spontaneous formation of Si nanocones vertically aligned to Si wafers

Yoshiko Tsuji; Shinichi Nakamura; Suguru Noda

J. Vac. Sci. Technol. B 25, 808–812 (2007) https://doi.org/10.1116/1.2734976

Abstract

View articletitled, Spontaneous formation of Si nanocones vertically aligned to Si wafers

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Process for scanning near-field microwave microscope probes with integrated ultratall coaxial tips

Yaqiang Wang; Alan D. Bettermann; Daniel W. van der Weide

J. Vac. Sci. Technol. B 25, 813–816 (2007) https://doi.org/10.1116/1.2721571

Abstract

View articletitled, Process for scanning near-field microwave microscope probes with integrated ultratall coaxial tips

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Electron emission from $Sr Ti O_{3}$ -coated silicon-tip arrays

H. J. Bian; X. F. Chen; J. S. Pan; Chang Q. Sun; W. Zhu

J. Vac. Sci. Technol. B 25, 817–821 (2007) https://doi.org/10.1116/1.2723754

Abstract

View articletitled, Electron emission from <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sr</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math>-coated silicon-tip arrays

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Embedded vertically grown carbon nanotubes for field emission applications

Yaser Abdi; Javad Koohsorkhi; Shams Mohajerzadeh; Sara Darbari; Zeinab Sanaee

J. Vac. Sci. Technol. B 25, 822–828 (2007) https://doi.org/10.1116/1.2731324

Abstract

View articletitled, Embedded vertically grown carbon nanotubes for field emission applications

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Analysis of the driving characteristic of carbon nanotube triode with high frequency

Weiqiang Chai; Chaogang Lou; Qilong Wang; Wei Lei; Xiaobing Zhang

J. Vac. Sci. Technol. B 25, 829–832 (2007) https://doi.org/10.1116/1.2735967

Abstract

View articletitled, Analysis of the driving characteristic of carbon nanotube triode with high frequency

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Ordered silicon nanostructures by ion beam induced glancing angle deposition

Christian Patzig; Bernd Rauschenbach; Wilfried Erfurth; Alexey Milenin

J. Vac. Sci. Technol. B 25, 833–838 (2007) https://doi.org/10.1116/1.2737436

Abstract

View articletitled, Ordered silicon nanostructures by ion beam induced glancing angle deposition

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Low bias reactive ion etching of GaAs with a $Si {Cl}_{4} ∕ N_{2} ∕ O_{2}$ time-multiplexed process

S. Golka; S. Schartner; W. Schrenk; G. Strasser

J. Vac. Sci. Technol. B 25, 839–844 (2007) https://doi.org/10.1116/1.2737439

Abstract

View articletitled, Low bias reactive ion etching of GaAs with a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">Cl</mi><mn>4</mn></msub><mo>∕</mo><msub><mi mathvariant="normal">N</mi><mn>2</mn></msub><mo>∕</mo><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> time-multiplexed process

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Characteristics of atomic-layer-deposited thin ${Hf}_{x} {Zr}_{1 - x} O_{2}$ gate dielectrics

D. H. Triyoso; R. I. Hegde; J. K. Schaeffer; R. Gregory; X.-D. Wang; M. Canonico; D. Roan; E. A. Hebert; K. Kim; J. Jiang; R. Rai; V. Kaushik; S. B. Samavedam; N. Rochat

J. Vac. Sci. Technol. B 25, 845–852 (2007) https://doi.org/10.1116/1.2734978

Abstract

View articletitled, Characteristics of atomic-layer-deposited thin <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Hf</mi><mi>x</mi></msub><msub><mi mathvariant="normal">Zr</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> gate dielectrics

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Position measurement method for alignment in UV imprint using a high index mold and “electronic” moiré technique

Nobuhito Suehira; Atsunori Terasaki; Shingo Okushima; Junichi Seki; Haruhito Ono; Hideki Ina

J. Vac. Sci. Technol. B 25, 853–856 (2007) https://doi.org/10.1116/1.2737440

Abstract

View articletitled, Position measurement method for alignment in UV imprint using a high index mold and “electronic” moiré technique

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Characterization and control of unconfined lateral diffusion under stencil masks

Zoltán Rácz; Alan Seabaugh

J. Vac. Sci. Technol. B 25, 857–861 (2007) https://doi.org/10.1116/1.2737437

Abstract

View articletitled, Characterization and control of unconfined lateral diffusion under stencil masks

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Nanopattern transfer to $Si O_{2}$ by ion track lithography and highly selective HF vapor etching

M. Skupiński; J. Jensen; A. Johansson; G. Possnert; M. Boman; K. Hjort; A. Razpet

J. Vac. Sci. Technol. B 25, 862–867 (2007) https://doi.org/10.1116/1.2738481

Abstract

View articletitled, Nanopattern transfer to <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> by ion track lithography and highly selective HF vapor etching

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Novel spin-on hard mask with Si-containing bottom antireflective coating for nanolithography

Sang-Jun Choi

J. Vac. Sci. Technol. B 25, 868–872 (2007) https://doi.org/10.1116/1.2732740

Abstract

View articletitled, Novel spin-on hard mask with Si-containing bottom antireflective coating for nanolithography

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Function of quantum-confinement effect in the $Al Ga N ∕ Al N ∕ Ga N$ heterostructure with an AlN interfacial layer

Y. C. Kong; R. M. Chu; Y. D. Zheng; C. H. Zhou; S. L. Gu; R. Zhang; P. Han; Y. Shi; R. L. Jiang

J. Vac. Sci. Technol. B 25, 873–876 (2007) https://doi.org/10.1116/1.2734975

Abstract

View articletitled, Function of quantum-confinement effect in the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Al</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> heterostructure with an AlN interfacial layer

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Fabrication of nanostructures using a $C$ -methylcalix[4]resorcinarene dielectric spacer

M. Fleischer; F. Panteleit; D. A. Wharam

J. Vac. Sci. Technol. B 25, 877–880 (2007) https://doi.org/10.1116/1.2738483

Abstract

View articletitled, Fabrication of nanostructures using a <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">C</mi></math>-methylcalix[4]resorcinarene dielectric spacer

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High-adhesive back side metallization of ultrathin wafers

Valery V. Felmetsger

J. Vac. Sci. Technol. B 25, 881–885 (2007) https://doi.org/10.1116/1.2737441

Abstract

View articletitled, High-adhesive back side metallization of ultrathin wafers

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Analyses of chamber wall coatings during the patterning of ultralow- $k$ materials with a metal hard mask: Consequences on cleaning strategies

T. Chevolleau; M. Darnon; T. David; N. Posseme; J. Torres; O. Joubert

J. Vac. Sci. Technol. B 25, 886–892 (2007) https://doi.org/10.1116/1.2738482

Abstract

View articletitled, Analyses of chamber wall coatings during the patterning of ultralow-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> materials with a metal hard mask: Consequences on cleaning strategies

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Nanosized tungsten carbide for $N O_{x}$ reduction

A. K. Rumaiz; H. Y. Lin; I. Baldytchev; S. Ismat Shah

J. Vac. Sci. Technol. B 25, 893–898 (2007) https://doi.org/10.1116/1.2738488

Abstract

View articletitled, Nanosized tungsten carbide for <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">N</mi><msub><mi mathvariant="normal">O</mi><mi>x</mi></msub></mrow></math> reduction

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Defect-free two-dimensional-photonic crystal structures on a nonlinear optical polymer patterned by nanoimprint lithography

Motoki Okinaka; Shin-ichiro Inoue; Kazuhito Tsukagoshi; Yoshinobu Aoyagi

J. Vac. Sci. Technol. B 25, 899–901 (2007) https://doi.org/10.1116/1.2740276

Abstract

View articletitled, Defect-free two-dimensional-photonic crystal structures on a nonlinear optical polymer patterned by nanoimprint lithography

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High gain $Al Ga As ∕ Ga As$ heterojunction bipolar transistor fabricated on $Si Ge ∕ Si$ substrate

K. L. Lew; S. F. Yoon; W. K. Loke; H. Tanoto; C. L. Dohrman; D. M. Isaacson; E. A. Fitzgerald

J. Vac. Sci. Technol. B 25, 902–905 (2007) https://doi.org/10.1116/1.2740278

Abstract

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Restoration and pore sealing of plasma damaged porous organosilicate low $k$ dielectrics with phenyl containing agents

J. Liu; W. Kim; J. Bao; H. Shi; W. Baek; P. S. Ho

J. Vac. Sci. Technol. B 25, 906–912 (2007) https://doi.org/10.1116/1.2738489

Abstract

View articletitled, Restoration and pore sealing of plasma damaged porous organosilicate low <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> dielectrics with phenyl containing agents

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${In}_{0.68} {Ga}_{0.32} As ∕ {Al}_{0.64} {In}_{0.36} As ∕ In P$ $4.5 μ m$ quantum cascade lasers grown by solid phosphorus molecular beam epitaxy

J. Chen; O. Malis; A. M. Sergent; D. L. Sivco; N. Weimann; A. Y. Cho

J. Vac. Sci. Technol. B 25, 913–915 (2007) https://doi.org/10.1116/1.2740287

Abstract

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Nanosoldering of carbon nanotubes on metal electrodes with an atomic force microscope

Sungjun Lee; Ji-Yong Park; Yong Sung Cho; Yong Dae Park; Young Kuk; Jin Wan Chung

J. Vac. Sci. Technol. B 25, 916–921 (2007) https://doi.org/10.1116/1.2740277

Abstract

View articletitled, Nanosoldering of carbon nanotubes on metal electrodes with an atomic force microscope

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Focused ion beam tomography of a microelectronic device with sub- $2 - nm$ resolution

T. S. Yeoh; N. A. Ives; N. Presser; G. W. Stupian; M. S. Leung; J. L. McCollum; F. W. Hawley

J. Vac. Sci. Technol. B 25, 922–925 (2007) https://doi.org/10.1116/1.2740288

Abstract

View articletitled, Focused ion beam tomography of a microelectronic device with sub-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>2</mn><mtext>-</mtext><mi>nm</mi></mrow></math> resolution

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High quality of $830 nm$ material grown by solid source molecular beam epitaxy for laser device printing applications

I. C. Hernandez; M. McElhinney; L. Zeng; V. A. Mishournyi

J. Vac. Sci. Technol. B 25, 926–930 (2007) https://doi.org/10.1116/1.2718963

Abstract

View articletitled, High quality of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>830</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> material grown by solid source molecular beam epitaxy for laser device printing applications

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Fabrication of local microvacuum package incorporating Si field emitter array and Ti getter

Daiji Noda; Masanori Hatakeyama; Kichinosuke Nishijyou; Kazuaki Sawada; Makoto Ishida

J. Vac. Sci. Technol. B 25, 931–934 (2007) https://doi.org/10.1116/1.2720851

Abstract

View articletitled, Fabrication of local microvacuum package incorporating Si field emitter array and Ti getter

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Fabrication and material properties of NiTi nanofluid

Ho Chang; Yi-Chun Hsu

J. Vac. Sci. Technol. B 25, 935–939 (2007) https://doi.org/10.1116/1.2740286

Abstract

View articletitled, Fabrication and material properties of NiTi nanofluid

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Novelty and versatility of self-catalytic nanowire growth: A case study with InN nanowires

Maoqi He; S. Noor Mohammad

J. Vac. Sci. Technol. B 25, 940–944 (2007) https://doi.org/10.1116/1.2740275

Abstract

View articletitled, Novelty and versatility of self-catalytic nanowire growth: A case study with InN nanowires

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Brief Reports and Comments

Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and $Si O_{2}$ substrates

I. Yoon; C. Yi; T. Kim; A. S. Brown; A. Seabaugh

J. Vac. Sci. Technol. B 25, 945–947 (2007) https://doi.org/10.1116/1.2739568

Abstract

View articletitled, Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> substrates

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PAPERS FROM THE 24th NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY

Heterostructures

Effects of temperature, nitrogen ions, and antimony on wide depletion width GaInNAs

A. J. Ptak; D. J. Friedman; Sarah Kurtz

J. Vac. Sci. Technol. B 25, 955–959 (2007) https://doi.org/10.1116/1.2715993

Abstract

View articletitled, Effects of temperature, nitrogen ions, and antimony on wide depletion width GaInNAs

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Impact of arsenic species $({As}_{2} ∕ {As}_{4})$ on the relaxation and morphology of step-graded $In {As}_{x} P_{1 - x}$ on InP substrates

Wanming Zhang; Changhyun Yi; April Brown

J. Vac. Sci. Technol. B 25, 960–963 (2007) https://doi.org/10.1116/1.2717197

Abstract

View articletitled, Impact of arsenic species <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mo>(</mo><msub><mi mathvariant="normal">As</mi><mn>2</mn></msub><mo>∕</mo><msub><mi mathvariant="normal">As</mi><mn>4</mn></msub><mo>)</mo></mrow></math> on the relaxation and morphology of step-graded <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><msub><mi mathvariant="normal">As</mi><mi>x</mi></msub><msub><mi mathvariant="normal">P</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></mrow></math> on InP substrates

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Nitrides

Epitaxial overgrowth of GaN nanocolumns

K. L. Averett; J. E. Van Nostrand; J. D. Albrecht; Y. S. Chen; C. C. Yang

J. Vac. Sci. Technol. B 25, 964–968 (2007) https://doi.org/10.1116/1.2717195

Abstract

View articletitled, Epitaxial overgrowth of GaN nanocolumns

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Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces

Soojeong Choi; Tong-Ho Kim; Henry O. Everitt; April Brown; Maria Losurdo; Giovanni Bruno; Akihiro Moto

J. Vac. Sci. Technol. B 25, 969–973 (2007) https://doi.org/10.1116/1.2720856

Abstract

View articletitled, Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces

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Direct-write composition patterning of InGaN by focused thermal beam during molecular-beam epitaxy

X. Chen; W. J. Schaff; L. F. Eastman

J. Vac. Sci. Technol. B 25, 974–977 (2007) https://doi.org/10.1116/1.2734164

Abstract

View articletitled, Direct-write composition patterning of InGaN by focused thermal beam during molecular-beam epitaxy

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Thermodynamic analysis of cation incorporation during molecular beam epitaxy of nitride films using metal-rich growth conditions

W. E. Hoke; A. Torabi; J. J. Mosca; T. D. Kennedy

J. Vac. Sci. Technol. B 25, 978–982 (2007) https://doi.org/10.1116/1.2716003

Abstract

View articletitled, Thermodynamic analysis of cation incorporation during molecular beam epitaxy of nitride films using metal-rich growth conditions

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Equipment

Promising new valved source for Ga or In evaporation

R. N. Sacks; Craig Bichrt

J. Vac. Sci. Technol. B 25, 983–986 (2007) https://doi.org/10.1116/1.2713118

Abstract

View articletitled, Promising new valved source for Ga or In evaporation

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Applications

Chemical beam epitaxy of $Ga As N ∕ Ga As$ multiquantum well solar cell

A. Freundlich; A. Fotkatzikis; L. Bhusal; L. Williams; A. Alemu; W. Zhu; J. A. H. Coaquira; A. Feltrin; G. Radhakrishnan

J. Vac. Sci. Technol. B 25, 987–990 (2007) https://doi.org/10.1116/1.2723757

Abstract

View articletitled, Chemical beam epitaxy of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> multiquantum well solar cell

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Molecular beam epitaxy growth of antimonide type-II “W” high-power interband cascade lasers and long-wavelength infrared photodiodes

C. S. Kim; C. L. Canedy; E. H. Aifer; M. Kim; W. W. Bewley; J. G. Tischler; D. C. Larrabee; J. A. Nolde; J. H. Warner; I. Vurgaftman; E. M. Jackson; J. R. Meyer

J. Vac. Sci. Technol. B 25, 991–994 (2007) https://doi.org/10.1116/1.2484728

Abstract

View articletitled, Molecular beam epitaxy growth of antimonide type-II “W” high-power interband cascade lasers and long-wavelength infrared photodiodes

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Other Semiconductors

Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors

A. Shen; H. Lu; M. C. Tamargo; W. Charles; I. Yokomizo; C. Y. Song; H. C. Liu; S. K. Zhang; X. Zhou; R. R. Alfano; K. J. Franz; C. Gmachl

J. Vac. Sci. Technol. B 25, 995–998 (2007) https://doi.org/10.1116/1.2720859

Abstract

View articletitled, Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors

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Magnetic Materials

Anomalous x-ray diffraction study of disorders in epitaxial films of the Heusler alloy ${Co}_{2} Mn Ge$

Brian A. Collins; Yuncheng Zhong; Yong S. Chu; Liang He; Frank Tsui

J. Vac. Sci. Technol. B 25, 999–1003 (2007) https://doi.org/10.1116/1.2720857

Abstract

View articletitled, Anomalous x-ray diffraction study of disorders in epitaxial films of the Heusler alloy <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Co</mi><mn>2</mn></msub><mi mathvariant="normal">Mn</mi><mi mathvariant="normal">Ge</mi></mrow></math>

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Magnetoresistance of fully epitaxial $Mn As ∕ Ga As$ lateral spin valves

M. Holub; D. Saha; P. Bhattacharya

J. Vac. Sci. Technol. B 25, 1004–1008 (2007) https://doi.org/10.1116/1.2715991

Abstract

View articletitled, Magnetoresistance of fully epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Mn</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> lateral spin valves

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In Situ Characterization

Reproducible reflection high energy electron diffraction signatures for improvement of AlN using in situ growth regime characterization

Shawn D. Burnham; Gon Namkoong; Kyoung-Keun Lee; W. Alan Doolittle

J. Vac. Sci. Technol. B 25, 1009–1013 (2007) https://doi.org/10.1116/1.2737435

Abstract

View articletitled, Reproducible reflection high energy electron diffraction signatures for improvement of AlN using in situ growth regime characterization

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Real time optical monitoring of molecular beam epitaxy of InN on SiC substrates

Maria Losurdo; Tong-Ho Kim; Soojeong Choi; Pae Wu; Maria M. Giangregorio; Giovanni Bruno; April Brown

J. Vac. Sci. Technol. B 25, 1014–1018 (2007) https://doi.org/10.1116/1.2737433

Abstract

View articletitled, Real time optical monitoring of molecular beam epitaxy of InN on SiC substrates

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In situ spectroscopic ellipsometry to monitor surface plasmon resonant group-III metals deposited by molecular beam epitaxy

Pae C Wu; Maria Losurdo; Tong-Ho Kim; Soojeong Choi; Giovanni Bruno; April S. Brown

J. Vac. Sci. Technol. B 25, 1019–1023 (2007) https://doi.org/10.1116/1.2734163

Abstract

View articletitled, In situ spectroscopic ellipsometry to monitor surface plasmon resonant group-III metals deposited by molecular beam epitaxy

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Oxides on Semiconductors

GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors

M. Holland; C. R. Stanley; W. Reid; I. Thayne; G. W. Paterson; A. R. Long; P. Longo; J. Scott; A. J. Craven; R. Gregory

J. Vac. Sci. Technol. B 25, 1024–1028 (2007) https://doi.org/10.1116/1.2738480

Abstract

View articletitled, GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors

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Epitaxial calcium oxide films deposited on gallium nitride surfaces

Mark D. Losego; Seiji Mita; Ramon Collazo; Zlatko Sitar; Jon-Paul Maria

J. Vac. Sci. Technol. B 25, 1029–1032 (2007) https://doi.org/10.1116/1.2710243

Abstract

View articletitled, Epitaxial calcium oxide films deposited on gallium nitride surfaces

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Thin, crystalline MgO on hexagonal $6 H - Si C (0001)$ by molecular beam epitaxy for functional oxide integration

T. L. Goodrich; Z. Cai; M. D. Losego; J.-P. Maria; K. S. Ziemer

J. Vac. Sci. Technol. B 25, 1033–1038 (2007) https://doi.org/10.1116/1.2734979

Abstract

View articletitled, Thin, crystalline MgO on hexagonal <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>6</mn><mi>H</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi><mi mathvariant="normal">C</mi><mrow><mo>(</mo><mn>0001</mn><mo>)</mo></mrow></mrow></math> by molecular beam epitaxy for functional oxide integration

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Oxide Materials

Integration of functional epitaxial oxides into silicon: From high- $K$ application to nanostructures

H. J. Osten; D. Kühne; A. Laha; M. Czernohorsky; E. Bugiel; A. Fissel

J. Vac. Sci. Technol. B 25, 1039–1043 (2007) https://doi.org/10.1116/1.2720858

Abstract

View articletitled, Integration of functional epitaxial oxides into silicon: From high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">K</mi></math> application to nanostructures

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Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP

P. J. Simmonds; H. E. Beere; H. W. Li; P. See; A. J. Shields; D. A. Ritchie

J. Vac. Sci. Technol. B 25, 1044–1048 (2007) https://doi.org/10.1116/1.2731334

Abstract

View articletitled, Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP

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rf oxygen plasma assisted molecular beam epitaxy growth of $Bi Fe O_{3}$ thin films on $Sr Ti O_{3}$ (001)

J. Kabelac; S. Ghosh; P. Dobal; R. Katiyar

J. Vac. Sci. Technol. B 25, 1049–1052 (2007) https://doi.org/10.1116/1.2715992

Abstract

View articletitled, rf oxygen plasma assisted molecular beam epitaxy growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Bi</mi><mi mathvariant="normal">Fe</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sr</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> (001)

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Posters

Epitaxial growth and strain relaxation of $Ba Ti O_{3}$ thin films on $Sr Ti O_{3}$ buffered (001) Si by molecular beam epitaxy

F. Niu; B. W. Wessels

J. Vac. Sci. Technol. B 25, 1053–1057 (2007) https://doi.org/10.1116/1.2539503

Abstract

View articletitled, Epitaxial growth and strain relaxation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ba</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sr</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> buffered (001) Si by molecular beam epitaxy

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Unintentional calcium incorporation in Ga(Al, In, N)As

J. B. Hurst; Shannon D. Lewis; Michael M. Oye; Archie L. Holmes, Jr.; A. J. Ptak; R. C. Reedy

J. Vac. Sci. Technol. B 25, 1058–1062 (2007) https://doi.org/10.1116/1.2717196

Abstract

View articletitled, Unintentional calcium incorporation in Ga(Al, In, N)As

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Effect of Al composition on filtering of threading dislocations by ${Al}_{x} {In}_{1 - x} Sb ∕ {Al}_{y} {In}_{1 - y} Sb$ heterostructures grown on GaAs (001)

M. Edirisooriya; T. D. Mishima; M. B. Santos

J. Vac. Sci. Technol. B 25, 1063–1065 (2007) https://doi.org/10.1116/1.2740271

Abstract

View articletitled, Effect of Al composition on filtering of threading dislocations by <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Al</mi><mi>x</mi></msub><msub><mi mathvariant="normal">In</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi mathvariant="normal">Sb</mi><mo>∕</mo><msub><mi mathvariant="normal">Al</mi><mi>y</mi></msub><msub><mi mathvariant="normal">In</mi><mrow><mn>1</mn><mo>−</mo><mi>y</mi></mrow></msub><mi mathvariant="normal">Sb</mi></mrow></math> heterostructures grown on GaAs (001)

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Optical monitoring of molecular beam epitaxy growth of $Al N ∕ Ga N$ using single-wavelength laser interferometry: A simple method of tracking real-time changes in growth rate

C. L. Griffiths; K. J. Weeks

J. Vac. Sci. Technol. B 25, 1066–1071 (2007) https://doi.org/10.1116/1.2723760

Abstract

View articletitled, Optical monitoring of molecular beam epitaxy growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> using single-wavelength laser interferometry: A simple method of tracking real-time changes in growth rate

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Kinetic Monte Carlo simulation of InAs quantum dot growth on nonlithographically patterned substrates

W. Guo; R. S. Guico; J. M. Xu; R. Beresford

J. Vac. Sci. Technol. B 25, 1072–1076 (2007) https://doi.org/10.1116/1.2731335

Abstract

View articletitled, Kinetic Monte Carlo simulation of InAs quantum dot growth on nonlithographically patterned substrates

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Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs

S. R. Johnson; D. Ding; J.-B. Wang; S.-Q. Yu; Y.-H. Zhang

J. Vac. Sci. Technol. B 25, 1077–1082 (2007) https://doi.org/10.1116/1.2720864

Abstract

View articletitled, Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs

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Midinfrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers

W. Li; H. Shao; D. Moscicka; A. Torfi; W. I. Wang

J. Vac. Sci. Technol. B 25, 1083–1086 (2007) https://doi.org/10.1116/1.2723758

Abstract

View articletitled, Midinfrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers

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Optical properties of molecular-beam-epitaxy-grown InGaMnAs thin films

F. C. Peiris; J. I. Hungerford; O. Maksimov; N. Samarth

J. Vac. Sci. Technol. B 25, 1087–1089 (2007) https://doi.org/10.1116/1.2734161

Abstract

View articletitled, Optical properties of molecular-beam-epitaxy-grown InGaMnAs thin films

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Molecular-beam epitaxy of phosphor-free $1.3 μ m$ InAlGaAs multiple-quantum-well lasers on InP (100)

W. Li; D. Moscicka; A. Torfi; W. I. Wang

J. Vac. Sci. Technol. B 25, 1090–1092 (2007) https://doi.org/10.1116/1.2737434

Abstract

View articletitled, Molecular-beam epitaxy of phosphor-free <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1.3</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math> InAlGaAs multiple-quantum-well lasers on InP (100)

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Fabrication and optical characterization of highly ordered $In As ∕ Ga As$ quantum dots on nonlithographically patterned substrates

Rodney S. Guico; Marian Tzolov; Wei Guo; Sylvain G. Cloutier; Roderic Beresford; Jimmy Xu

J. Vac. Sci. Technol. B 25, 1093–1097 (2007) https://doi.org/10.1116/1.2723759

Abstract

View articletitled, Fabrication and optical characterization of highly ordered <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> quantum dots on nonlithographically patterned substrates

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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin $(\sim 80 nm)$ ${Si}_{1 - x} {Ge}_{x}$ step-graded buffer layers for high- $κ$ III-V metal-oxide-semiconductor field effect transistor applications

Michael M. Oye; Davood Shahrjerdi; Injo Ok; Jeffrey B. Hurst; Shannon D. Lewis; Sagnik Dey; David Q. Kelly; Sachin Joshi; Terry J. Mattord; Xiaojun Yu; Mark A. Wistey; James S. Harris, Jr.; Archie L. Holmes, Jr.; Jack C. Lee; Sanjay K. Banerjee

J. Vac. Sci. Technol. B 25, 1098–1102 (2007) https://doi.org/10.1116/1.2713119

Abstract

View articletitled, Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mo>(</mo><mo>∼</mo><mn>80</mn><mspace width="0.3em"></mspace><mi>nm</mi><mo>)</mo></mrow></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Si</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Ge</mi><mi>x</mi></msub></mrow></math> step-graded buffer layers for high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">κ</mi></math> III-V metal-oxide-semiconductor field effect transistor applications

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Study of intersubband transitions of ${Zn}_{x} {Cd}_{1 - x} Se ∕ {Zn}_{x^{'}} {Cd}_{y^{'}} {Mg}_{1 - x^{'} - y^{'}} Se$ multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications

H. Lu; A. Shen; M. C. Tamargo; W. Charles; I. Yokomizo; M. Muñoz; Y. Gong; G. F. Neumark; K. J. Franz; C. Gmachl; C. Y. Song; H. C. Liu

J. Vac. Sci. Technol. B 25, 1103–1107 (2007) https://doi.org/10.1116/1.2723761

Abstract

View articletitled, Study of intersubband transitions of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Zn</mi><mi>x</mi></msub><msub><mi mathvariant="normal">Cd</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi mathvariant="normal">Se</mi><mo>∕</mo><msub><mi mathvariant="normal">Zn</mi><mrow><msup><mi>x</mi><mo>′</mo></msup></mrow></msub><msub><mi mathvariant="normal">Cd</mi><mrow><msup><mi>y</mi><mo>′</mo></msup></mrow></msub><msub><mi mathvariant="normal">Mg</mi><mrow><mn>1</mn><mo>−</mo><msup><mi>x</mi><mo>′</mo></msup><mo>−</mo><msup><mi>y</mi><mo>′</mo></msup></mrow></msub><mi mathvariant="normal">Se</mi></mrow></math> multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications

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$D X$ -like centers in $In As ∕ Ga As$ QDIPs observed by polarization-dependent Fourier transform infrared spectroscopy

Z. Y. Zhao; C. Yi; A. D. Stiff-Roberts; A. J. Hoffman; D. Wasserman; C. Gmachl

J. Vac. Sci. Technol. B 25, 1108–1112 (2007) https://doi.org/10.1116/1.2484803

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>D</mi><mi>X</mi></mrow></math>-like centers in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> QDIPs observed by polarization-dependent Fourier transform infrared spectroscopy

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Optical studies of molecular beam epitaxy grown $Ga As Sb N ∕ Ga As$ single quantum well structures

Kalyan Nunna; S. Iyer; L. Wu; S. Bharatan; Jia Li; K. K. Bajaj; X. Wei; R. T. Senger

J. Vac. Sci. Technol. B 25, 1113–1116 (2007) https://doi.org/10.1116/1.2720860

Abstract

View articletitled, Optical studies of molecular beam epitaxy grown <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mi mathvariant="normal">Sb</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> single quantum well structures

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Letters

Field emission from GaN and $(Al, Ga) N ∕ Ga N$ nanorod heterostructures

Parijat Deb; Tyler Westover; Hogyoung Kim; Timothy Fisher; Timothy Sands

J. Vac. Sci. Technol. B 25, L15–L18 (2007) https://doi.org/10.1116/1.2732735

Abstract

View articletitled, Field emission from GaN and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mi mathvariant="normal">Al</mi><mo>,</mo><mi mathvariant="normal">Ga</mi><mo>)</mo></mrow><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> nanorod heterostructures

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Deposition of zinc oxide layers by high-power impulse magnetron sputtering

S. Konstantinidis; A. Hemberg; J. P. Dauchot; M. Hecq

J. Vac. Sci. Technol. B 25, L19–L21 (2007) https://doi.org/10.1116/1.2735968

Abstract

View articletitled, Deposition of zinc oxide layers by high-power impulse magnetron sputtering

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Issues

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PAPERS FROM THE 24th NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY

Heterostructures

Nitrides

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Magnetic Materials

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Oxides on Semiconductors

Oxide Materials

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