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January 2007

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

Articles

Characterization of the feature-size dependence in $Ar ∕ {Cl}_{2}$ chemically assisted ion beam etching of InP-based photonic crystal devices

A. Berrier; M. Mulot; S. Anand; A. Talneau; R. Ferrini; R. Houdré

J. Vac. Sci. Technol. B 25, 1–10 (2007) https://doi.org/10.1116/1.2402142

Abstract

View articletitled, Characterization of the feature-size dependence in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ar</mi><mo>∕</mo><msub><mi mathvariant="normal">Cl</mi><mn>2</mn></msub></mrow></math> chemically assisted ion beam etching of InP-based photonic crystal devices

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Molecular beam epitaxial growth of indium antimonide and its characterization

H. T. Pham; S. F. Yoon; D. Boning; S. Wicaksono

J. Vac. Sci. Technol. B 25, 11–16 (2007) https://doi.org/10.1116/1.2402143

Abstract

View articletitled, Molecular beam epitaxial growth of indium antimonide and its characterization

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Control of micro- and nanopatterns of octadecyltrimethoxysilane monolayers using nanoimprint lithography and atmospheric chemical vapor deposition

Laurence Ressier; Christel Martin; Benoît Viallet; Jérémie Grisolia; Jean-Pierre Peyrade

J. Vac. Sci. Technol. B 25, 17–20 (2007) https://doi.org/10.1116/1.2402144

Abstract

View articletitled, Control of micro- and nanopatterns of octadecyltrimethoxysilane monolayers using nanoimprint lithography and atmospheric chemical vapor deposition

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Cryogenic etch process development for profile control of high aspect-ratio submicron silicon trenches

Marcel W. Pruessner; William S. Rabinovich; Todd H. Stievater; Doewon Park; Jeffrey W. Baldwin

J. Vac. Sci. Technol. B 25, 21–28 (2007) https://doi.org/10.1116/1.2402151

Abstract

View articletitled, Cryogenic etch process development for profile control of high aspect-ratio submicron silicon trenches

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Surface treatments of SiGe for scanning tunneling microscopy/spectroscopy and characterization of SiGe $p - n$ junction

Toshiko Okui; Yuma Tanaka; Yasuhiro Shiraki

J. Vac. Sci. Technol. B 25, 29–32 (2007) https://doi.org/10.1116/1.2402152

Abstract

View articletitled, Surface treatments of SiGe for scanning tunneling microscopy/spectroscopy and characterization of SiGe <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>-</mtext><mi>n</mi></mrow></math> junction

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Low-stress silicon carbonitride for the machining of high-frequency nanomechanical resonators

L. M. Fischer; N. Wilding; M. Gel; S. Evoy

J. Vac. Sci. Technol. B 25, 33–37 (2007) https://doi.org/10.1116/1.2402153

Abstract

View articletitled, Low-stress silicon carbonitride for the machining of high-frequency nanomechanical resonators

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Fringe field theory and experiment for electrostatic chucking of extreme ultraviolet photomasks

S. Raghunathan; L. Govindaraju; J. Ruan; J. G. Hartley

J. Vac. Sci. Technol. B 25, 38–42 (2007) https://doi.org/10.1116/1.2404681

Abstract

View articletitled, Fringe field theory and experiment for electrostatic chucking of extreme ultraviolet photomasks

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Transport mechanisms and the effects of organic layer thickness on the performance of organic Schottky diodes

Chun-Yuan Huang; Shih-Yen Lin; Shiau-Shin Cheng; Shu-Ting Chou; Chuan-Yi Yang; Tzu-Min Ou; Meng-Chyi Wu; I-Min Chan; Yi-Jen Chan

J. Vac. Sci. Technol. B 25, 43–46 (2007) https://doi.org/10.1116/1.2404682

Abstract

View articletitled, Transport mechanisms and the effects of organic layer thickness on the performance of organic Schottky diodes

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Simple theoretic approach to estimate the effect of gravity and thermophoresis on the diffusional nanoparticle contamination under low pressure conditions

Christof Asbach; Heinz Fissan; Jung Hyeun Kim; Se-Jin Yook; David Y. H. Pui

J. Vac. Sci. Technol. B 25, 47–53 (2007) https://doi.org/10.1116/1.2404685

Abstract

View articletitled, Simple theoretic approach to estimate the effect of gravity and thermophoresis on the diffusional nanoparticle contamination under low pressure conditions

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Nanoscale optical imaging of pigment particles in paint with near-field scanning optical microscopy

Beverly Clark, III; Gamil Gurguis; H. D. Hallen

J. Vac. Sci. Technol. B 25, 54–57 (2007) https://doi.org/10.1116/1.2404686

Abstract

View articletitled, Nanoscale optical imaging of pigment particles in paint with near-field scanning optical microscopy

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Remarkably efficient acid generation in chemically amplified resist from quantum chemistry modeling

Alex A. Granovsky; Anastasia V. Bochenkova; Nikolay Suetin; David Fryer; Vivek Singh

J. Vac. Sci. Technol. B 25, 58–68 (2007) https://doi.org/10.1116/1.2406061

Abstract

View articletitled, Remarkably efficient acid generation in chemically amplified resist from quantum chemistry modeling

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Electrical, photoelectrical, and luminescent properties of doped $p$ -type GaN superlattices

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; K. D. Shcherbatchev; V. T. Bublik; M. I. Voronova; Amir M. Dabiran; A. V. Osinsky; S. J. Pearton

J. Vac. Sci. Technol. B 25, 69–73 (2007) https://doi.org/10.1116/1.2406062

Abstract

View articletitled, Electrical, photoelectrical, and luminescent properties of doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type GaN superlattices

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Modeling of the integrated magnetic focusing and gated field-emission device with single carbon nanotube

P.-Y. Chen; K.-H. Hsu; K.-W. Cheng; C.-T. Hung; J.-S. Wu; T.-C. Cheng; J.-P. Yu

J. Vac. Sci. Technol. B 25, 74–81 (2007) https://doi.org/10.1116/1.2406064

Abstract

View articletitled, Modeling of the integrated magnetic focusing and gated field-emission device with single carbon nanotube

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Analysis of interface trap states at Schottky diode by using equivalent circuit modeling

Myungsim Jun; Moongyu Jang; Yarkyeon Kim; Cheljong Choi; Taeyoub Kim; Byungchul Park; Seongjae Lee

J. Vac. Sci. Technol. B 25, 82–85 (2007) https://doi.org/10.1116/1.2406066

Abstract

View articletitled, Analysis of interface trap states at Schottky diode by using equivalent circuit modeling

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Interface chemical characterization of novel $W ∕ Hf O_{2} ∕ Ge O N ∕ Ge$ stacks

E. Martinez; O. Renault; L. Clavelier; C. Le Royer; J.-M. Hartmann; V. Loup; S. Minoret; V. Cosnier; Y. Campidelli; J. Zegenhagen; T.-L. Lee

J. Vac. Sci. Technol. B 25, 86–90 (2007) https://doi.org/10.1116/1.2409960

Abstract

View articletitled, Interface chemical characterization of novel <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">W</mi><mo>∕</mo><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>∕</mo><mi mathvariant="normal">Ge</mi><mi mathvariant="normal">O</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ge</mi></mrow></math> stacks

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Photon-beam lithography reaches $12.5 nm$ half-pitch resolution

Harun H. Solak; Yasin Ekinci; Philipp Käser; Sunggook Park

J. Vac. Sci. Technol. B 25, 91–95 (2007) https://doi.org/10.1116/1.2401612

Abstract

View articletitled, Photon-beam lithography reaches <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>12.5</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> half-pitch resolution

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Optimization and integration of trimethylsilane-based organosilicate glass and organofluorinated silicate glass dielectric thin films for Cu damascene process

Y. L. Cheng; Y. L. Wang; G. J. Hwang; W. H. Lee; M. L. O’Neill; Allen Tang; C. L. Wu

J. Vac. Sci. Technol. B 25, 96–101 (2007) https://doi.org/10.1116/1.2409974

Abstract

View articletitled, Optimization and integration of trimethylsilane-based organosilicate glass and organofluorinated silicate glass dielectric thin films for Cu damascene process

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Low temperature ZEP-520A development process for enhanced critical dimension realization in reactive ion etch etched polysilicon

H. Wang; G. M. Laws; S. Milicic; P. Boland; A. Handugan; M. Pratt; T. Eschrich; S. Myhajlenko; J. A. Allgair; B. Bunday

J. Vac. Sci. Technol. B 25, 102–105 (2007) https://doi.org/10.1116/1.2426976

Abstract

View articletitled, Low temperature ZEP-520A development process for enhanced critical dimension realization in reactive ion etch etched polysilicon

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Fabrication of high-resolution multiwall carbon nanotube field-emission cathodes at room temperature

Yitian Peng; Yuanzhong Hu; Hui Wang

J. Vac. Sci. Technol. B 25, 106–108 (2007) https://doi.org/10.1116/1.2402150

Abstract

View articletitled, Fabrication of high-resolution multiwall carbon nanotube field-emission cathodes at room temperature

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Modeling of field-assisted emission from a negative electron affinity cathode

A. Mayer; M. S. Chung; N. Kumar; B. L. Weiss; N. M. Miskovsky; P. H. Cutler

J. Vac. Sci. Technol. B 25, 109–114 (2007) https://doi.org/10.1116/1.2404683

Abstract

View articletitled, Modeling of field-assisted emission from a negative electron affinity cathode

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Fabrication of nanodot array molds for photonanoimprint using anodic porous alumina

Yuichi Kurashima; Yoshihiko Yokota; Iwao Miyamoto; Taro Itatani

J. Vac. Sci. Technol. B 25, 115–119 (2007) https://doi.org/10.1116/1.2429669

Abstract

View articletitled, Fabrication of nanodot array molds for photonanoimprint using anodic porous alumina

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Simple model for dielectrophoretic alignment of gallium nitride nanowires

Abhishek Motayed; Maoqi He; Albert V. Davydov; John Melngailis; S. N. Mohammad

J. Vac. Sci. Technol. B 25, 120–123 (2007) https://doi.org/10.1116/1.2429673

Abstract

View articletitled, Simple model for dielectrophoretic alignment of gallium nitride nanowires

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$45 nm$ node back end of the line yield evaluation on ultrahigh density interconnect structures using electron beam direct write lithography

Beatrice Icard; Laurent Pain; V. Arnal; Serdar Manakli; Jean-Christophe Le-Denmat; P. Brun; Maxime Vincent; Christophe Soonkindt; Blandine Minghetti; Tasuku Matsumiya

J. Vac. Sci. Technol. B 25, 124–129 (2007) https://doi.org/10.1116/1.2429668

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>45</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> node back end of the line yield evaluation on ultrahigh density interconnect structures using electron beam direct write lithography

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Real-time sensing and metrology for atomic layer deposition processes and manufacturing

Laurent Henn-Lecordier; Wei Lei; Mariano Anderle; Gary W. Rubloff

J. Vac. Sci. Technol. B 25, 130–139 (2007) https://doi.org/10.1116/1.2429672

Abstract

View articletitled, Real-time sensing and metrology for atomic layer deposition processes and manufacturing

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Optical properties of a multibeam column with a single-electron source

Osamu Kamimura; Sayaka Tanimoto; Hiroya Ohta; Yoshinori Nakayama; Makoto Sakakibara; Yasunari Sohda; Masato Muraki; Susumu Gotoh; Masaki Hosoda; Yasuhiro Someda; Kenji Tamamori; Futoshi Hirose; Kenichi Nagae; Kazuhiko Kato; Masahiko Okunuki

J. Vac. Sci. Technol. B 25, 140–146 (2007) https://doi.org/10.1116/1.2429674

Abstract

View articletitled, Optical properties of a multibeam column with a single-electron source

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Influence of oxygen diffusion on residual stress for tantalum thin films

M. H. Cheng; T. C. Cheng; W. J. Huang; M. N. Chang; M. K. Chung

J. Vac. Sci. Technol. B 25, 147–151 (2007) https://doi.org/10.1116/1.2431179

Abstract

View articletitled, Influence of oxygen diffusion on residual stress for tantalum thin films

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Novel Samsung advanced resist for thermal flow process material for nano-processing

Sang-Jun Choi

J. Vac. Sci. Technol. B 25, 152–155 (2007) https://doi.org/10.1116/1.2431348

Abstract

View articletitled, Novel Samsung advanced resist for thermal flow process material for nano-processing

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Study of plasma-induced damage of porous ultralow- $k$ dielectric films during photoresist stripping

Songlin Xu; Ce Qin; Li Diao; Dave Gilbert; Li Hou; Allan Wiesnoski; Eric Busch; Ricky McGowan; Brian White; Frank Weber

J. Vac. Sci. Technol. B 25, 156–163 (2007) https://doi.org/10.1116/1.2431349

Abstract

View articletitled, Study of plasma-induced damage of porous ultralow-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> dielectric films during photoresist stripping

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Critical impact of mask electromagnetic effects on optical proximity corrections performance for $45 nm$ and beyond

Jaione Tirapu Azpiroz; Alan E. Rosenbluth; Kafai Lai; Carlos Fonseca; Da Yang

J. Vac. Sci. Technol. B 25, 164–168 (2007) https://doi.org/10.1116/1.2429667

Abstract

View articletitled, Critical impact of mask electromagnetic effects on optical proximity corrections performance for <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>45</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> and beyond

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Effects of corona discharge ions on the synthesis of silver nanoparticles by a supersonic nozzle expansion method

Jae Hee Jung; Hyung Ho Park; Sang Soo Kim

J. Vac. Sci. Technol. B 25, 169–174 (2007) https://doi.org/10.1116/1.2429670

Abstract

View articletitled, Effects of corona discharge ions on the synthesis of silver nanoparticles by a supersonic nozzle expansion method

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Influence of base additives on the reaction-diffusion front of model chemically amplified photoresists

Bryan D. Vogt; Shuhui Kang; Vivek M. Prabhu; Ashwin Rao; Eric K. Lin; Wen-li Wu; Sushil K. Satija; Karen Turnquest

J. Vac. Sci. Technol. B 25, 175–182 (2007) https://doi.org/10.1116/1.2429675

Abstract

View articletitled, Influence of base additives on the reaction-diffusion front of model chemically amplified photoresists

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Influence of starting material on analog technology fabrication yield and device component performance

Pushpa Mahalingam; Xiaoju Wu; Ron Knerr; Yvonne Patton; Imran Khan

J. Vac. Sci. Technol. B 25, 183–188 (2007) https://doi.org/10.1116/1.2406063

Abstract

View articletitled, Influence of starting material on analog technology fabrication yield and device component performance

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Ballistic recovery in III-V nanowire transistors

M. J. Gilbert; S. K. Banerjee

J. Vac. Sci. Technol. B 25, 189–193 (2007) https://doi.org/10.1116/1.2409987

Abstract

View articletitled, Ballistic recovery in III-V nanowire transistors

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Three dimension analysis of $E \times B$ mass separator

Wen-Ping Li; Li Han; Wen-Qi Gu

J. Vac. Sci. Technol. B 25, 194–198 (2007) https://doi.org/10.1116/1.2432352

Abstract

View articletitled, Three dimension analysis of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>E</mi><mo>×</mo><mi>B</mi></mrow></math> mass separator

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Effects of surface treatments on hexagonal InN films grown on sapphire substrates

L. Cao; Z. L. Xie; B. Liu; X. Q. Xiu; R. Zhang; Y. D. Zheng

J. Vac. Sci. Technol. B 25, 199–201 (2007) https://doi.org/10.1116/1.2387161

Abstract

View articletitled, Effects of surface treatments on hexagonal InN films grown on sapphire substrates

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Advance static random access memory soft fail analysis using nanoprobing and junction delineation transmission electron microscopy

Wen-Tung Chang; Tsung-Eong Hsieh; Gunnar Zimmermann; Lars Wang

J. Vac. Sci. Technol. B 25, 202–207 (2007) https://doi.org/10.1116/1.2433966

Abstract

View articletitled, Advance static random access memory soft fail analysis using nanoprobing and junction delineation transmission electron microscopy

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Orogenic movement mechanism for the formation of symmetrical relief features in copper nitride thin films

A. L. Ji; Y. Du; C. R. Li; Y. Q. Wang; Z. X. Cao

J. Vac. Sci. Technol. B 25, 208–212 (2007) https://doi.org/10.1116/1.2433970

Abstract

View articletitled, Orogenic movement mechanism for the formation of symmetrical relief features in copper nitride thin films

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$Ni ∕ Au$ contacts on homoepitaxial $p - Zn Se$ with surface oxygen plasma treatments

T. K. Lin; K. T. Lam; S. J. Chang; Y. Z. Chiou; S. P. Chang

J. Vac. Sci. Technol. B 25, 213–216 (2007) https://doi.org/10.1116/1.2433974

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ni</mi><mo>∕</mo><mi mathvariant="normal">Au</mi></mrow></math> contacts on homoepitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>-</mtext><mi mathvariant="normal">Zn</mi><mi mathvariant="normal">Se</mi></mrow></math> with surface oxygen plasma treatments

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Leakage current and charge trapping behavior in $Ti O_{2} ∕ Si O_{2}$ high- $κ$ gate dielectric stack on $4 H ‐ Si C$ substrate

R. Mahapatra; Amit K. Chakraborty; N. Poolamai; A. Horsfall; S. Chattopadhyay; N. G. Wright; Karl S. Coleman; P. G. Coleman; C. P. Burrows

J. Vac. Sci. Technol. B 25, 217–223 (2007) https://doi.org/10.1116/1.2433976

Abstract

View articletitled, Leakage current and charge trapping behavior in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>∕</mo><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">κ</mi></math> gate dielectric stack on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>4</mn><mi>H</mi><mtext>‐</mtext><mi mathvariant="normal">Si</mi><mi mathvariant="normal">C</mi></mrow></math> substrate

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Process dependence of the thermal conductivity of image reversal photoresist layers

Ming-Tsung Hung; Y. Sungtaek Ju

J. Vac. Sci. Technol. B 25, 224–228 (2007) https://doi.org/10.1116/1.2433982

Abstract

View articletitled, Process dependence of the thermal conductivity of image reversal photoresist layers

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Void-free low-temperature silicon direct-bonding technique using plasma activation

Xiaobo Ma; Weili Liu; Zhitang Song; Wei Li; Chenglu Lin

J. Vac. Sci. Technol. B 25, 229–234 (2007) https://doi.org/10.1116/1.2406060

Abstract

View articletitled, Void-free low-temperature silicon direct-bonding technique using plasma activation

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Local line edge roughness in microphotonic devices: An electron-beam lithography study

Yuansheng Ma; Yang-chun Cheng; Franco Cerrina; T. Barwicz; H. I. Smith

J. Vac. Sci. Technol. B 25, 235–241 (2007) https://doi.org/10.1116/1.2426978

Abstract

View articletitled, Local line edge roughness in microphotonic devices: An electron-beam lithography study

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Scanning tunneling spectroscopy of single-strand deoxyribonucleic acid for sequencing

Yuhsuke Yoshida; Yoshihiro Nojima; Hiroyuki Tanaka; Tomoji Kawai

J. Vac. Sci. Technol. B 25, 242–246 (2007) https://doi.org/10.1116/1.2431180

Abstract

View articletitled, Scanning tunneling spectroscopy of single-strand deoxyribonucleic acid for sequencing

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Multiple replication of three dimensional structures with undercuts

S. Möllenbeck; N. Bogdanski; M. Wissen; H.-C. Scheer; J. Zajadacz; K. Zimmer

J. Vac. Sci. Technol. B 25, 247–251 (2007) https://doi.org/10.1116/1.2433965

Abstract

View articletitled, Multiple replication of three dimensional structures with undercuts

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Vapor phase deposition of oligo(phenylene ethynylene) molecules for use in molecular electronic devices

Nadine Gergel-Hackett; Michael J. Cabral; Timothy L. Pernell; Lloyd R. Harriott; John C. Bean; Bo Chen; Meng Lu; James M. Tour

J. Vac. Sci. Technol. B 25, 252–257 (2007) https://doi.org/10.1116/1.2433981

Abstract

View articletitled, Vapor phase deposition of oligo(phenylene ethynylene) molecules for use in molecular electronic devices

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Effect of surface roughness of the neutralization grid on the energy and flux of fast neutrals and residual ions extracted from a neutral beam source

Alok Ranjan; Clemens Helmbrecht; Vincent M. Donnelly; Demetre J. Economou; Gerhard F. Franz

J. Vac. Sci. Technol. B 25, 258–263 (2007) https://doi.org/10.1116/1.2433983

Abstract

View articletitled, Effect of surface roughness of the neutralization grid on the energy and flux of fast neutrals and residual ions extracted from a neutral beam source

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High- $Q$ micromachined three-dimensional integrated inductors for high-frequency applications

Dae-Hee Weon; Jong-Hyeok Jeon; Saeed Mohammadi

J. Vac. Sci. Technol. B 25, 264–270 (2007) https://doi.org/10.1116/1.2433984

Abstract

View articletitled, High-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">Q</mi></math> micromachined three-dimensional integrated inductors for high-frequency applications

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Damascene technique applied to surface acoustic wave devices

Daniel Reitz; Juergen Thomas; Hagen Schmidt; Siegfried Menzel; Klaus Wetzig; Matthias Albert; Johann W. Bartha

J. Vac. Sci. Technol. B 25, 271–276 (2007) https://doi.org/10.1116/1.2404684

Abstract

View articletitled, Damascene technique applied to surface acoustic wave devices

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Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy ${Cs}^{+}$ secondary ion mass spectrometry

A. R. Chanbasha; A. T. S. Wee

J. Vac. Sci. Technol. B 25, 277–285 (2007) https://doi.org/10.1116/1.2429671

Abstract

View articletitled, Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Cs</mi><mo>+</mo></msup></math> secondary ion mass spectrometry

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Self-aligned microtriode for plasma generation at atmospheric pressure

S. H. Han; Y. M. Kim

J. Vac. Sci. Technol. B 25, 286–288 (2007) https://doi.org/10.1116/1.2433968

Abstract

View articletitled, Self-aligned microtriode for plasma generation at atmospheric pressure

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Brief Reports and Comments

Mesa structures of GaAs fabricated by nanoparticle mask under gas-cluster ion-beam irradiation

Susumu Yamada; Masahiro Nagano; Shingo Houzumi; Noriaki Toyoda; Isao Yamada

J. Vac. Sci. Technol. B 25, 289–291 (2007) https://doi.org/10.1116/1.2402149

Abstract

View articletitled, Mesa structures of GaAs fabricated by nanoparticle mask under gas-cluster ion-beam irradiation

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Errata

Erratum: “Microfabrication of ultrahigh density wafer-level thin film compliant interconnects for through-silicon-via based chip stacks” [J. Vac. Sci. Technol. B 24, 1780 (2006)]

Parthiban Arunasalam; Harold D. Ackler; Bahgat G. Sammakia

J. Vac. Sci. Technol. B 25, 292 (2007) https://doi.org/10.1116/1.2434021

Extract

View articletitled, Erratum: “Microfabrication of ultrahigh density wafer-level thin film compliant interconnects for through-silicon-via based chip stacks” [J. Vac. Sci. Technol. B 24, 1780 (2006)]

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Letters

Metal contact formation by microdeposition of nondestructive particles from focused ion beam sputtering

J. Shiue; P. C. Kuo; Y. L. Wang

J. Vac. Sci. Technol. B 25, L1–L4 (2007) https://doi.org/10.1116/1.2401613

Abstract

View articletitled, Metal contact formation by microdeposition of nondestructive particles from focused ion beam sputtering

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Negative resist behavior of neutral sodium atoms deposited on self-assembled monolayers

Sanghyun Ju; A. K. Mills; Qingling Hang; D. S. Elliott; D. B. Janes

J. Vac. Sci. Technol. B 25, L5–L9 (2007) https://doi.org/10.1116/1.2431351

Abstract

View articletitled, Negative resist behavior of neutral sodium atoms deposited on self-assembled monolayers

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