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Review Article

On the use of alloying elements for Cu interconnect applications

K. Barmak; C. Cabral, Jr.; K. P. Rodbell; J. M. E. Harper

J. Vac. Sci. Technol. B 24, 2485–2498 (2006) https://doi.org/10.1116/1.2357744

Abstract

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Regular Articles

Micromechanical resonators and filters for microelectromechanical system applications

Mehrnaz Motiee; Raafat R. Mansour; Amir Khajepour

J. Vac. Sci. Technol. B 24, 2499–2508 (2006) https://doi.org/10.1116/1.2356865

Abstract

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Microscopic approach to an equation for the heat flow between wafer and E-chuck

Michael Klick; Mathias Bernt

J. Vac. Sci. Technol. B 24, 2509–2517 (2006) https://doi.org/10.1116/1.2357745

Abstract

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Metal-insulator-metal capacitors using atomic-layer-deposited ${Al}_{2} O_{3} ∕ Hf O_{2} ∕ {Al}_{2} O_{3}$ sandwiched dielectrics for wireless communications

Shi-Jin Ding; Yu-Jian Huang; Yanbo Li; D. W. Zhang; C. Zhu; M.-F. Li

J. Vac. Sci. Technol. B 24, 2518–2522 (2006) https://doi.org/10.1116/1.2357746

Abstract

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Area selective atomic layer deposition of titanium dioxide: Effect of precursor chemistry

Ashwini Sinha; Dennis W. Hess; Clifford L. Henderson

J. Vac. Sci. Technol. B 24, 2523–2532 (2006) https://doi.org/10.1116/1.2359728

Abstract

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Focused ion beam fabrication of two dimensional photonic crystals in silicon-on-insulator

K. Balasubramanian; P. J. Heard; M. J. Cryan

J. Vac. Sci. Technol. B 24, 2533–2537 (2006) https://doi.org/10.1116/1.2359729

Abstract

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Development of a regeneration-type neural interface: A microtube guide for axon growth of neuronal cells fabricated using focused-ion-beam chemical vapor deposition

Takayuki Hoshino; Akinori Ozasa; Reo Kometani; Takafumi Suzuki; Shinji Matsui; Kunihiko Mabuchi

J. Vac. Sci. Technol. B 24, 2538–2543 (2006) https://doi.org/10.1116/1.2359730

Abstract

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Generalized model of the metal/ $n - Ga N$ Schottky interface and improved performance by electrochemical Pt deposition

Oleg Cojocari; Hans L. Hartnagel

J. Vac. Sci. Technol. B 24, 2544–2552 (2006) https://doi.org/10.1116/1.2359731

Abstract

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Chemical lithography

Peng Yao; Garrett J. Schneider; Janusz Murakowski; Dennis W. Prather

J. Vac. Sci. Technol. B 24, 2553–2559 (2006) https://doi.org/10.1116/1.2359732

Abstract

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Direct correlation of negative magnetoresistance with concentrations of localized holes in Be delta-doped GaAs structures

J. P. Noh; S. Iwasaki; D. W. Jung; A. Z. M. Touhidul Islam; N. Otsuka

J. Vac. Sci. Technol. B 24, 2560–2565 (2006) https://doi.org/10.1116/1.2359733

Abstract

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Direct-write electron-beam lithography of an IR antenna-coupled microbolometer onto the surface of a hemispherical lens

C. T. Middlebrook; G. Zummo; G. D. Boreman

J. Vac. Sci. Technol. B 24, 2566–2569 (2006) https://doi.org/10.1116/1.2360978

Abstract

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Effect of the addition of argon to reactive nitrogen gas on field emission properties of amorphous carbon nitride films

Junjie Li; Hidenori Mimura; Yoichiro Neo; Changzhi Gu; Haijun Li; Shuxia Chen

J. Vac. Sci. Technol. B 24, 2570–2574 (2006) https://doi.org/10.1116/1.2360980

Abstract

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Field electron emission characteristics of diamond films with different grain morphologies

X. Lu; Q. Yang; W. Chen; C. Xiao; A. Hirose

J. Vac. Sci. Technol. B 24, 2575–2580 (2006) https://doi.org/10.1116/1.2362742

Abstract

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$In As ∕ Al Sb$ high-electron-mobility transistors by molecular-beam epitaxy for low-power applications

M. D. Lange; R. S. Tsai; W. R. Deal; P. S. Nam; L. J. Lee; R. S. Sandhu; R. Hsing; B. D. Poust; J. L. Kraus; A. L. Gutierrez-Aitken; B. R. Bennett; J. B. Boos; A. M. Noori; S. L. Hayashi; M. S. Goorsky

J. Vac. Sci. Technol. B 24, 2581–2585 (2006) https://doi.org/10.1116/1.2362758

Abstract

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Epitaxial growth and strain relaxation of MgO thin films on Si grown by molecular beam epitaxy

F. Niu; A. L. Meier; B. W. Wessels

J. Vac. Sci. Technol. B 24, 2586–2591 (2006) https://doi.org/10.1116/1.2362759

Abstract

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Controlled electroplating for high-aspect-ratio zone-plate fabrication

A. Holmberg; M. Lindblom; H. M. Hertz

J. Vac. Sci. Technol. B 24, 2592–2596 (2006) https://doi.org/10.1116/1.2362761

Abstract

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Mobility and charge density tuning in double $δ$ -doped pseudomorphic high-electron-mobility transistors grown by metal organic chemical vapor deposition

Chong-Yi Lee; Hung-Pin Shiao; Kuan-Chu Kuo; Hsin-Yen Wu; Wen-Hsiang Lin

J. Vac. Sci. Technol. B 24, 2597–2600 (2006) https://doi.org/10.1116/1.2362783

Abstract

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Fabrication and characterization of high breakdown voltage $Al Ga N ∕ Ga N$ heterojunction field effect transistors on sapphire substrates

Y. C. Choi; M. Pophristic; B. Peres; M. G. Spencer; L. F. Eastman

J. Vac. Sci. Technol. B 24, 2601–2605 (2006) https://doi.org/10.1116/1.2366542

Abstract

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Proposal of a new microreactor for vertical chemical operation

Yuichi Utsumi; Toshifumi Asano; Yoshiaki Ukita; Katsuhiro Matsui; Masahiro Takeo; Seiji Negoro

J. Vac. Sci. Technol. B 24, 2606–2611 (2006) https://doi.org/10.1116/1.2366609

Abstract

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Vertical-via interconnection for infrared antennas

T. A. Mandviwala; B. A. Lail; G. D. Boreman

J. Vac. Sci. Technol. B 24, 2612–2615 (2006) https://doi.org/10.1116/1.2366613

Abstract

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Electron-beam lithography of $Co ∕ Pd$ multilayer with hydrogen silsesquioxane and amorphous Si intermediate layer

Jung-Sub Wi; Tae-Yon Lee; Kyung-Bae Jin; Dae Hoon Hong; Kyung Ho Shin; Ki-Bum Kim

J. Vac. Sci. Technol. B 24, 2616–2620 (2006) https://doi.org/10.1116/1.2366615

Abstract

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Electrical properties of fluorine-doped silicon-oxycarbide dielectric barrier for copper interconnect

Chun-Chieh Huang; Jow-Lay Huang; Ying-Lang Wang; Juin-Jie Chang

J. Vac. Sci. Technol. B 24, 2621–2626 (2006) https://doi.org/10.1116/1.2366541

Abstract

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Magnetization losses in submicrometer CoFeB dots etched in a high ion density ${Cl}_{2}$ -based plasma

C. G. C. H. M. Fabrie; J. T. Kohlhepp; H. J. M. Swagten; B. Koopmans; M. S. P. Andriesse; E. van der Drift

J. Vac. Sci. Technol. B 24, 2627–2630 (2006) https://doi.org/10.1116/1.2366547

Abstract

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Actinic extreme ultraviolet lithography mask blank defect inspection by photoemission electron microscopy

Jingquan Lin; Ulrich Neuhaeusler; Jawad Slieh; Armin Brechling; Ulf Kleineberg; Ulrich Heinzmann; Andreas Oelsner; Dima Valdaitsev; Gerd Schoenhense; Nils Weber; Matthias Escher; Michael Merkel

J. Vac. Sci. Technol. B 24, 2631–2635 (2006) https://doi.org/10.1116/1.2366607

Abstract

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Efficient fabrication and characterization of cobalt nanoparticles embedded in metal∕oxide∕semiconductor structures for the application of nonvolatile memory

Jung Yup Yang; Kap Soo Yoon; Won Joon Choi; Young Ho Do; Ju Hyung Kim; Chae Ok Kim; Jin Pyo Hong

J. Vac. Sci. Technol. B 24, 2636–2639 (2006) https://doi.org/10.1116/1.2366612

Abstract

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Study of diffusion barriers for Au metal on liquid phase oxidized GaAs

Po-Wen Sze; Jian-Jiun Huang; Dei-Wei Chou; Yeong-Her Wang

J. Vac. Sci. Technol. B 24, 2640–2644 (2006) https://doi.org/10.1116/1.2366545

Abstract

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Effects of various plasma pretreatments on $193 nm$ photoresist and linewidth roughness after etching

Myeong-Cheol Kim; Denis Shamiryan; Youngjae Jung; Werner Boullart; Chang-Jin Kang; Han-Ku Cho

J. Vac. Sci. Technol. B 24, 2645–2652 (2006) https://doi.org/10.1116/1.2366616

Abstract

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Mobility study of a new naphthalenetetracarboxylic diimide derivative

D. Yang; R. P. Shrestha; Y. X. Li; L. Yan; E. A. Irene

J. Vac. Sci. Technol. B 24, 2653–2658 (2006) https://doi.org/10.1116/1.2366611

Abstract

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Immersion lithography for laser mask writing

Derek W. Bassett; Roger T. Bonnecaze

J. Vac. Sci. Technol. B 24, 2659–2667 (2006) https://doi.org/10.1116/1.2366614

Abstract

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Suppression of surface segregation of silicon dopants during molecular beam epitaxy of $(411) A$ ${In}_{0.75} {Ga}_{0.25} As ∕ {In}_{0.52} {Al}_{0.48} As$ pseudomorphic high electron mobility transistor structures

H. Sagisaka; T. Kitada; S. Shimomura; S. Hiyamizu; I. Watanabe; T. Matsui; T. Mimura

J. Vac. Sci. Technol. B 24, 2668–2671 (2006) https://doi.org/10.1116/1.2382944

Abstract

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Anisotropic high aspect ratio etch for perfluorcyclobutyl polymers with stress relief technique

Nazli Rahmanian; Seunghyun Kim; Gregory P. Nordin

J. Vac. Sci. Technol. B 24, 2672–2677 (2006) https://doi.org/10.1116/1.2382945

Abstract

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Plasma oxidation of polyhedral oligomeric silsesquioxane polymers

D. Eon; V. Raballand; G. Cartry; C. Cardinaud; N. Vourdas; P. Argitis; E. Gogolides

J. Vac. Sci. Technol. B 24, 2678–2688 (2006) https://doi.org/10.1116/1.2382947

Abstract

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Effects of $Si O_{2} ∕ {Si}_{3} N_{4}$ hard masks on etching properties of metal gates

Wan Sik Hwang; Byung-Jin Cho; Daniel S. H. Chan; Vladimir Bliznetsov; Won Jong Yoo

J. Vac. Sci. Technol. B 24, 2689–2694 (2006) https://doi.org/10.1116/1.2382950

Abstract

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Time of flight secondary ion mass spectroscopy investigation of ultralow- $k$ dielectric modifications in hydrogen and deuterium plasmas

P. Lazzeri; G. J. Stueber; G. S. Oehrlein; R. McGowan; E. Busch; S. Pederzoli; M. Bersani; M. Anderle

J. Vac. Sci. Technol. B 24, 2695–2701 (2006) https://doi.org/10.1116/1.2382949

Abstract

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Thin-film transistors with amorphous indium gallium oxide channel layers

H. Q. Chiang; D. Hong; C. M. Hung; R. E. Presley; John F. Wager; C.-H Park; D. A. Keszler; G. S. Herman

J. Vac. Sci. Technol. B 24, 2702–2705 (2006) https://doi.org/10.1116/1.2366569

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Demonstration of spatially programmable chemical vapor deposition: Model-based uniformity∕nonuniformity control

Ramaswamy Sreenivasan; Raymond A. Adomaitis; Gary W. Rubloff

J. Vac. Sci. Technol. B 24, 2706–2715 (2006) https://doi.org/10.1116/1.2359735

Abstract

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Quantifying release in step-and-flash imprint lithography

Edwin P. Chan; Alfred J. Crosby

J. Vac. Sci. Technol. B 24, 2716–2722 (2006) https://doi.org/10.1116/1.2366586

Abstract

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Low-resistance Ohmic contacts developed on undoped $Al Ga N ∕ Ga N$ -based high electron mobility transistors with AlN interlayer

Yunju Sun; L. F. Eastman

J. Vac. Sci. Technol. B 24, 2723–2725 (2006) https://doi.org/10.1116/1.2395964

Abstract

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Electron cyclotron plasma etching damage investigated by $In Ga As ∕ Ga As$ quantum well photoluminescence

S. N. M. Mestanza; N. C. Frateschi

J. Vac. Sci. Technol. B 24, 2726–2730 (2006) https://doi.org/10.1116/1.2366543

Abstract

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Characterization and optimization of a $P$ -channel poly(⁠ $o$ -methoxyaniline) based thin film transistor

Roshan P. Shrestha; Dongxing Yang; Yuxiang Li; Li Yan; Eugene A. Irene

J. Vac. Sci. Technol. B 24, 2731–2736 (2006) https://doi.org/10.1116/1.2382946

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Effects of Zn content on structural and transparent conducting properties of indium-zinc oxide films grown by rf magnetron sputtering

Jae-Soung Park; Ju-Il Song; Young-Woo Heo; Joon-Hyung Lee; Jeong-Joo Kim; W. T. Lim; L. Stafford; D. P. Norton; S. J. Pearton

J. Vac. Sci. Technol. B 24, 2737–2740 (2006) https://doi.org/10.1116/1.2393246

Abstract

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Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded $Si Ge ∕ Si$

David M. Isaacson; Carl L. Dohrman; Eugene A. Fitzgerald

J. Vac. Sci. Technol. B 24, 2741–2747 (2006) https://doi.org/10.1116/1.2366584

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Mechanisms of isotropic and selective etching between SiGe and Si

V. Caubet; C. Beylier; S. Borel; O. Renault

J. Vac. Sci. Technol. B 24, 2748–2754 (2006) https://doi.org/10.1116/1.2393244

Abstract

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Custom design of optical-grade thin films of silicon oxide by direct-write electron-beam-induced deposition

Heinz D. Wanzenboeck; Markus Fischer; Robert Svagera; Johann Wernisch; Emmerich Bertagnolli

J. Vac. Sci. Technol. B 24, 2755–2760 (2006) https://doi.org/10.1116/1.2393245

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Coulomb blur in a multi-electron-beam system

Yasunari Sohda; Osamu Kamimura; Hiroya Ohta

J. Vac. Sci. Technol. B 24, 2761–2764 (2006) https://doi.org/10.1116/1.2382948

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Brief Reports and Comments

Interconnecting single nano-objects on surfaces for transport experiments

A. Della Torre; P. P. Pompa; L. L. del Mercato; R. Cingolani; R. Rinaldi; S. Shiv Shankar; M. Sastry

J. Vac. Sci. Technol. B 24, 2765–2768 (2006) https://doi.org/10.1116/1.2366606

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Fabrication of nanoelectromechanical resonators using a cryogenic etching technique

N. Nelson-Fitzpatrick; K. Westra; P. Li; S. McColman; N. Wilding; S. Evoy

J. Vac. Sci. Technol. B 24, 2769–2771 (2006) https://doi.org/10.1116/1.2366608

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Reverse transfer of nanostencil patterns using intermediate sacrificial layer and lift-off process

Chan Woo Park; Oscar Vazquez Mena; Marc A. F. van den Boogaart; Jürgen Brugger

J. Vac. Sci. Technol. B 24, 2772–2775 (2006) https://doi.org/10.1116/1.2366610

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Shop Notes

Enabling in situ atomic scale surface imaging for vertical molecular beam epitaxy machines

Dong Jun Kim; Deokjoon Cha; Gregory J. Salamo; Haeyeon Yang

J. Vac. Sci. Technol. B 24, 2776–2778 (2006) https://doi.org/10.1116/1.2395963

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PAPERS FROM THE 50th INTERNATIONAL CONFERENCE ON ELECTRON, ION, AND PHOTON BEAM TECHNOLOGY AD NANOFABRICATION

Optical Lithography

Immersion patterning down to $27 nm$ half pitch

T. M. Bloomstein; T. H. Fedynyshyn; I. Pottebaum; M. F. Marchant; S. J. Deneault; M. Rothschild

J. Vac. Sci. Technol. B 24, 2789–2797 (2006) https://doi.org/10.1116/1.2366678

Abstract

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Effect of resist surface characteristics on film-pulling velocity in immersion lithography

S. Schuetter; T. Shedd; G. Nellis; A. Romano; R. Dammel; M. Padmanaban; F. Houlihan; A. Krawicz; G. Lin; D. Rahman; S. Chakrapani; M. Neisser; C. Van Peski

J. Vac. Sci. Technol. B 24, 2798–2802 (2006) https://doi.org/10.1116/1.2387160

Abstract

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Impact of stray light depending on image quality: An approximation using total integrated scatter

Young-Chang Kim; Peter De Bisschop; Geert Vandenberghe; Luc Van Den Hove; Hanku Cho; Jootae Moon

J. Vac. Sci. Technol. B 24, 2803–2807 (2006) https://doi.org/10.1116/1.2357965

Abstract

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Phase shift mask interferometric birefringence monitor

Gregory R. McIntyre; Andrew Neureuther

J. Vac. Sci. Technol. B 24, 2808–2814 (2006) https://doi.org/10.1116/1.2395951

Abstract

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Generation of isofocal target patterns using process modeling during optical proximity correction

Lawrence S. Melvin, III; Ebo Croffie; Abani Biswas

J. Vac. Sci. Technol. B 24, 2815–2819 (2006) https://doi.org/10.1116/1.2397069

Abstract

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EUV Lithography

Novel absorber stack for minimizing shadow effect in extreme ultraviolet mask

Tae Geun Kim; Byung Hun Kim; In-Yong Kang; Yong-Chae Chung; Jinho Ahn; Seung Yoon Lee; In-Sung Park; Chung Yong Kim; Nae-Eung Lee

J. Vac. Sci. Technol. B 24, 2820–2823 (2006) https://doi.org/10.1116/1.2393295

Abstract

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Actinic inspection of extreme ultraviolet programed multilayer defects and cross-comparison measurements

Kenneth A. Goldberg; Anton Barty; Yanwei Liu; Patrick Kearney; Yoshihiro Tezuka; Tsuneo Terasawa; John S. Taylor; Hak-Seung Han; Obert R. Wood, II

J. Vac. Sci. Technol. B 24, 2824–2828 (2006) https://doi.org/10.1116/1.2375085

Abstract

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Distortion of chucked extreme ultraviolet reticles from entrapped particles

V. Ramaswamy; R. L. Engelstad; K. T. Turner; A. R. Mikkelson; S. Veeraraghavan

J. Vac. Sci. Technol. B 24, 2829–2833 (2006) https://doi.org/10.1116/1.2375078

Abstract

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Electrostatic chucking for extreme ultraviolet lithography: Simulations and experiments

M. Nataraju; J. Sohn; S. Veeraraghavan; A. R. Mikkelson; K. T. Turner; R. L. Engelstad; C. K. Van Peski; K. J. Orvek

J. Vac. Sci. Technol. B 24, 2834–2839 (2006) https://doi.org/10.1116/1.2388967

Abstract

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Synchrotron Lithography

Three-dimensional patterning using fine step motion in synchrotron radiation lithography

M. Fukuda; K. Deguchi; M. Suzuki; Y. Utsumi

J. Vac. Sci. Technol. B 24, 2840–2843 (2006) https://doi.org/10.1116/1.2366620

Abstract

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Properties of zone plates used for lithography

R. Zheng; L. Jiang; M. Feldman

J. Vac. Sci. Technol. B 24, 2844–2847 (2006) https://doi.org/10.1116/1.2393293

Abstract

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Pulse reverse plating for uniform nickel height in zone plates

M. Lindblom; H. M. Hertz; A. Holmberg

J. Vac. Sci. Technol. B 24, 2848–2851 (2006) https://doi.org/10.1116/1.2395953

Abstract

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Maskless Lithography

Spatial light modulator for maskless optical projection lithography

J. Vac. Sci. Technol. B 24, 2852–2856 (2006) https://doi.org/10.1116/1.2387156

Abstract

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Integrated multi-electron-beam blanker array for sub- $10 ‐ nm$ electron beam induced deposition

Yanxia Zhang; C. T. H Heerkens; M. J. van Bruggen; P. Kruit

J. Vac. Sci. Technol. B 24, 2857–2860 (2006) https://doi.org/10.1116/1.2366677

Abstract

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Masks

Electrostatic chuck fringe field simulation and its impact on electron beam extreme ultraviolet mask patterning

Junru Ruan; John Hartley

J. Vac. Sci. Technol. B 24, 2861–2865 (2006) https://doi.org/10.1116/1.2393291

Abstract

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Predicting electron projection lithography mask membrane image placement errors

M. J. Boruszewski; R. L. Engelstad; H. Sakaue; H. Arimoto; H. Eguchi

J. Vac. Sci. Technol. B 24, 2866–2870 (2006) https://doi.org/10.1116/1.2366655

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Charged Particle Sources, Optics and Systems

Helium ion microscope: A new tool for nanoscale microscopy and metrology

B. W. Ward; John A. Notte; N. P. Economou

J. Vac. Sci. Technol. B 24, 2871–2874 (2006) https://doi.org/10.1116/1.2357967

Abstract

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Real-time determination of electron-beam probe shape using an in situ fiducial grid

J. T. Hastings

J. Vac. Sci. Technol. B 24, 2875–2880 (2006) https://doi.org/10.1116/1.2357964

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Orientation dependence of linewidth variation in sub- $50 - nm$ Gaussian e-beam lithography and its correction

M. Lu; D. M. Tennant; C. J. Jacobsen

J. Vac. Sci. Technol. B 24, 2881–2885 (2006) https://doi.org/10.1116/1.2393292

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Photoelectron emission studies in CsBr at $257 nm$

Juan R. Maldonado; Zhi Liu; Yun Sun; Piero A. Pianetta; Fabian W. Pease

J. Vac. Sci. Technol. B 24, 2886–2891 (2006) https://doi.org/10.1116/1.2363410

Abstract

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Arrayed miniature electron beam columns for mask making

J. P. Spallas; C. S. Silver; L. P. Muray

J. Vac. Sci. Technol. B 24, 2892–2896 (2006) https://doi.org/10.1116/1.2395955

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Comparison of parameters for Schottky and cold field emission sources

G. A. Schwind; G. Magera; L. W. Swanson

J. Vac. Sci. Technol. B 24, 2897–2901 (2006) https://doi.org/10.1116/1.2366675

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Ion Beam Lithography Technology

High brightness inductively coupled plasma source for high current focused ion beam applications

N. S. Smith; W. P. Skoczylas; S. M. Kellogg; D. E. Kinion; P. P. Tesch; O. Sutherland; A. Aanesland; R. W. Boswell

J. Vac. Sci. Technol. B 24, 2902–2906 (2006) https://doi.org/10.1116/1.2366617

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Using laser-cooled atoms as a focused ion beam source

J. L. Hanssen; E. A. Dakin; J. J. McClelland; M. Jacka

J. Vac. Sci. Technol. B 24, 2907–2910 (2006) https://doi.org/10.1116/1.2363406

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Mechanical characteristics and applications of diamondlike-carbon cantilevers fabricated by focused-ion-beam chemical vapor deposition

Jun-ya Igaki; Ken-ichiro Nakamatsu; Reo Kometani; Kazuhiro Kanda; Yuichi Haruyama; Takashi Kaito; Shinji Matsui

J. Vac. Sci. Technol. B 24, 2911–2914 (2006) https://doi.org/10.1116/1.2357960

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Estimation of scattered particle exposure in ion beam aperture array lithography

V. Parekh; A. Ruiz; P. Ruchhoeft; H. Nounu; D. Litvinov; J. C. Wolfe

J. Vac. Sci. Technol. B 24, 2915–2919 (2006) https://doi.org/10.1116/1.2366619

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Electron Beam Lithography Technology

Electron beam lithography for magnetic recording heads: Characterization and optimization of critical components

XiaoMin Yang; Jianyun Zhou; Shuaigang Xiao; Keith Mountfield

J. Vac. Sci. Technol. B 24, 2920–2925 (2006) https://doi.org/10.1116/1.2357966

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Two-dimensional Bragg grating lasers defined by electron-beam lithography

Guy A. DeRose; Lin Zhu; John M. Choi; Joyce K. S. Poon; Amnon Yariv; Axel Scherer

J. Vac. Sci. Technol. B 24, 2926–2930 (2006) https://doi.org/10.1116/1.2375080

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Predicted effect of shot noise on contact hole dimension in e-beam lithography

P. Kruit; S. Steenbrink; M. Wieland

J. Vac. Sci. Technol. B 24, 2931–2935 (2006) https://doi.org/10.1116/1.2387153

Abstract

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Process optimization and proximity effect correction for gray scale e-beam lithography

Raghunath Murali; Devin K. Brown; Kevin P. Martin; James D. Meindl

J. Vac. Sci. Technol. B 24, 2936–2939 (2006) https://doi.org/10.1116/1.2357962

Abstract

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Electron-beam patterning and process optimization for magnetic sensor fabrication

Shuaigang Xiao; XiaoMin Yang

J. Vac. Sci. Technol. B 24, 2940–2944 (2006) https://doi.org/10.1116/1.2366699

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Sub- $100 - nm$ lithography with miniature electron beam columns

L. P. Muray; C. S. Silver; J. P. Spallas

J. Vac. Sci. Technol. B 24, 2945–2950 (2006) https://doi.org/10.1116/1.2375088

Abstract

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Silicon photodiodes for low-voltage electron detection in scanning electron microscopy and electron beam lithography

C. S. Silver; J. P. Spallas; L. P. Muray

J. Vac. Sci. Technol. B 24, 2951–2955 (2006) https://doi.org/10.1116/1.2363405

Abstract

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Technique to automatically measure electron-beam diameter and astigmatism: BEAMETR

S. Babin; M. Gaevski; D. Joy; M. Machin; A. Martynov

J. Vac. Sci. Technol. B 24, 2956–2959 (2006) https://doi.org/10.1116/1.2387158

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Nanoimprint Lithography

Replication of diffractive-optical arrays via photocurable nanoimprint lithography

Matthias D. Galus; Euclid Moon; Henry I. Smith; Rajesh Menon

J. Vac. Sci. Technol. B 24, 2960–2963 (2006) https://doi.org/10.1116/1.2363401

Abstract

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Nanowire fin field effect transistors via UV-based nanoimprint lithography

A. Fuchs; M. Bender; U. Plachetka; L. Kock; T. Wahlbrink; H. D. B. Gottlob; J. K. Efavi; M. Moeller; M. Schmidt; T. Mollenhauer; C. Moormann; M. C. Lemme; H. Kurz

J. Vac. Sci. Technol. B 24, 2964–2967 (2006) https://doi.org/10.1116/1.2395956

Abstract

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Hybrid mold reversal imprint for three-dimensional and selective patterning

C. Peng; S. W. Pang

J. Vac. Sci. Technol. B 24, 2968–2972 (2006) https://doi.org/10.1116/1.2366676

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Evidence for internal stresses induced by nanoimprint lithography

Hyun Wook Ro; Yifu Ding; Hae-Jeong Lee; Daniel R. Hines; Ronald L. Jones; Eric K. Lin; Alamgir Karim; Wen-li Wu; Christopher L. Soles

J. Vac. Sci. Technol. B 24, 2973–2978 (2006) https://doi.org/10.1116/1.2387157

Abstract

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Direct die-to-database electron beam inspection of fused silica imprint templates

D. J. Resnick; L. J. Myron; E. Thompson; T. Hasebe; T. Tokumoto; C. Yan; M. Yamamoto; H. Wakamori; M. Inoue; Eric Ainley; Kevin J. Nordquist; William J. Dauksher

J. Vac. Sci. Technol. B 24, 2979–2983 (2006) https://doi.org/10.1116/1.2357963

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Multiple level nanochannels fabricated using reversal UV nanoimprint

B. Yang; S. W. Pang

J. Vac. Sci. Technol. B 24, 2984–2987 (2006) https://doi.org/10.1116/1.2393247

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Atomic force microscopy local anodic oxidation of thin ${Si}_{3} N_{4}$ layers for robust prototyping of nanostructures

Irene Fernandez-Cuesta; Xavier Borrisé; Francesc Pérez-Murano

J. Vac. Sci. Technol. B 24, 2988–2992 (2006) https://doi.org/10.1116/1.2375082

Abstract

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Deposition and patterning of diamondlike carbon as antiwear nanoimprint templates

S. Ramachandran; L. Tao; T. H. Lee; S. Sant; L. J. Overzet; M. J. Goeckner; M. J. Kim; G. S. Lee; W. Hu

J. Vac. Sci. Technol. B 24, 2993–2997 (2006) https://doi.org/10.1116/1.2363409

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Thermal imprint with negligibly low residual layer

Nicolas Bogdanski; Matthias Wissen; Saskia Möllenbeck; Hella-Christin Scheer

J. Vac. Sci. Technol. B 24, 2998–3001 (2006) https://doi.org/10.1116/1.2388964

Abstract

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Submicron three-dimensional structures fabricated by reverse contact UV nanoimprint lithography

N. Kehagias; Vincent Reboud; G. Chansin; M. Zelsmann; C. Jeppesen; F. Reuther; C. Schuster; M. Kubenz; G. Gruetzner; C. M. Sotomayor Torres

J. Vac. Sci. Technol. B 24, 3002–3005 (2006) https://doi.org/10.1116/1.2388962

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Influence of light polarization on UV stabilization of prepatterned resists

M. Wissen; N. Bogdanski; S. Moellenbeck; P. Helm; H.-C. Scheer

J. Vac. Sci. Technol. B 24, 3006–3010 (2006) https://doi.org/10.1116/1.2395961

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Influence of mold depth on capillary bridges in nanoimprint lithography

N. Chaix; S. Landis; D. Hermelin; T. Leveder; C. Perret; V. Delaye; C. Gourgon

J. Vac. Sci. Technol. B 24, 3011–3015 (2006) https://doi.org/10.1116/1.2393249

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Layer thickness-induced lens distortions during thermal nanoimprint

H.-C. Scheer; N. Bogdanski; S. Möllenbeck; M. Wissen; M. Nishilata; Y. Hirai

J. Vac. Sci. Technol. B 24, 3016–3020 (2006) https://doi.org/10.1116/1.2388966

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Resist Science and Technology

Epoxy-containing ArF resists with narrow molecular weight distribution

Masamitsu Shirai; Makoto Manabe; Shou Tsuji; Toshiro Itani

J. Vac. Sci. Technol. B 24, 3021–3024 (2006) https://doi.org/10.1116/1.2357971

Abstract

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Pattern noise in electron beam resists: PMMA, KRS-XE, TOK, HSQ

Marshal A. Miller; Wojtek J. Poppe; Andrew R. Neureuther; Alex Liddle; Bruce Harteneck

J. Vac. Sci. Technol. B 24, 3025–3030 (2006) https://doi.org/10.1116/1.2393248

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Contribution of photoacid generator to material roughness

Theodore H. Fedynyshyn; Indira Pottebaum; David K. Astolfi; Alberto Cabral; Jeanette Roberts; Robert Meagley

J. Vac. Sci. Technol. B 24, 3031–3039 (2006) https://doi.org/10.1116/1.2395954

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Three-dimensional resist development simulation with discrete models

T. Schnattinger; E. Bär; A. Erdmann

J. Vac. Sci. Technol. B 24, 3040–3043 (2006) https://doi.org/10.1116/1.2397071

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Exposure dose effects on the reaction-diffusion process in model extreme ultraviolet photoresists

Kristopher A. Lavery; Bryan D. Vogt; Vivek M. Prabhu; Eric K. Lin; Wen-Li Wu; Sushil K. Satija; Kwang-Woo Choi

J. Vac. Sci. Technol. B 24, 3044–3047 (2006) https://doi.org/10.1116/1.2375086

Abstract

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Scanning x-ray microscopy investigations into the electron-beam exposure mechanism of hydrogen silsesquioxane resists

Deirdre L. Olynick; J. Alexander Liddle; Alexei V. Tivanski; Mary K. Gilles; Tolek Tyliszczak; Farhad Salmassi; Kathy Liang; Stephen R. Leone

J. Vac. Sci. Technol. B 24, 3048–3054 (2006) https://doi.org/10.1116/1.2395957

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Analysis of acid yield generated in chemically amplified electron beam resist

Takahiro Kozawa; Takumi Shigaki; Kazumasa Okamoto; Akinori Saeki; Seiichi Tagawa; Toshiyuki Kai; Tsutomu Shimokawa

J. Vac. Sci. Technol. B 24, 3055–3060 (2006) https://doi.org/10.1116/1.2366656

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Effect of cold development on improvement in electron-beam nanopatterning resolution and line roughness

L. E. Ocola; A. Stein

J. Vac. Sci. Technol. B 24, 3061–3065 (2006) https://doi.org/10.1116/1.2366698

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Correlation between proton dynamics and line edge roughness in chemically amplified resist for post-optical lithography

Akinori Saeki; Takahiro Kozawa; Seiichi Tagawa; Heidi B. Cao

J. Vac. Sci. Technol. B 24, 3066–3072 (2006) https://doi.org/10.1116/1.2393250

Abstract

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Time-dependent exposure dose of hydrogen silsesquioxane when used as a negative electron-beam resist

Nathaniel Clark; Amy Vanderslice; Robert Grove, III; Robert R. Krchnavek

J. Vac. Sci. Technol. B 24, 3073–3076 (2006) https://doi.org/10.1116/1.2366697

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Metrology, Inspection and Alignment

Transmission electron microscopy: A linewidth measurement technique for lithography

John B. Warren; Aaron Stein

J. Vac. Sci. Technol. B 24, 3077–3082 (2006) https://doi.org/10.1116/1.2387159

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Nanometer-precision pattern registration for scanning-probe lithographies using interferometric-spatial-phase imaging

Euclid E. Moon; Henry I. Smith

J. Vac. Sci. Technol. B 24, 3083–3087 (2006) https://doi.org/10.1116/1.2393294

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Integrated aerial image sensor: Design, modeling, and assembly

Jing Xue; Kurt Moen; Costas J. Spanos

J. Vac. Sci. Technol. B 24, 3088–3093 (2006) https://doi.org/10.1116/1.2393296

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From nanoscale displacement sensing and estimation to nanoscale alignment

Jun Gao; Carl Picciotto; Wei Wu; William M. Tong

J. Vac. Sci. Technol. B 24, 3094–3100 (2006) https://doi.org/10.1116/1.2375089

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Study of overlay metrology in atomic force microscope lithography (overlaying lithography with atomic force microscope)

Xiaona Li; Li Han; Wenqi Gu

J. Vac. Sci. Technol. B 24, 3101–3104 (2006) https://doi.org/10.1116/1.2375087

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Impact of registration error of reticle on total overlay error budget

Doo-Youl Lee; Yong-Jin Chun; Je-Bum Yoon; Sang-Hee Lee; Suk-Joo Lee; Han-Ku Cho; Joo-Tae Moon

J. Vac. Sci. Technol. B 24, 3105–3109 (2006) https://doi.org/10.1116/1.2395959

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Pattern reconstruction of scanning electron microscope images using long-range content complexity analysis of the edge ridge signal

Hanying Feng; Jun Ye; R. Fabian Pease

J. Vac. Sci. Technol. B 24, 3110–3114 (2006) https://doi.org/10.1116/1.2363408

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Modeling and Simulation

True three-dimensional proximity effect correction in electron-beam lithography

Kasi Anbumony; S.-Y. Lee

J. Vac. Sci. Technol. B 24, 3115–3120 (2006) https://doi.org/10.1116/1.2388960

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Modeling of linewidth measurement in scanning electron microscopes using advanced Monte Carlo software

S. Babin; S. Borisov; A. Ivanchikov; I. Ruzavin

J. Vac. Sci. Technol. B 24, 3121–3124 (2006) https://doi.org/10.1116/1.2366701

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Nanofabrication

Reversing the hydrogen silsesquioxane image by silicon nitride and silicon oxide chemical mechanical polishing

F. C. M. J. M. van Delft; F. J. H. van der Kruis; P. P. J. van Eerd; H. A. van Esch; H. W. J. J. van de Laar

J. Vac. Sci. Technol. B 24, 3125–3127 (2006) https://doi.org/10.1116/1.2357969

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Thin membrane self-alignment using nanomagnets for three-dimensional nanomanufacturing

Anthony J. Nichol; William J. Arora; George Barbastathis

J. Vac. Sci. Technol. B 24, 3128–3132 (2006) https://doi.org/10.1116/1.2375084

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Microelectrical noise detector for rapid, specific, and sensitive identification of bacteria

Sungkyu Seo; Hyun Chul Kim; Mosong Cheng; Xinchang Ruan; Wei Ruan

J. Vac. Sci. Technol. B 24, 3133–3138 (2006) https://doi.org/10.1116/1.2395960

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Robust shadow-mask evaporation via lithographically controlled undercut

B. Cord; C. Dames; K. K. Berggren; J. Aumentado

J. Vac. Sci. Technol. B 24, 3139–3143 (2006) https://doi.org/10.1116/1.2375090

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Direct wiring of carbon nanotubes for integration in nanoelectromechanical systems

S. Bauerdick; A. Linden; C. Stampfer; T. Helbling; C. Hierold

J. Vac. Sci. Technol. B 24, 3144–3147 (2006) https://doi.org/10.1116/1.2388965

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Charged Particle Deposition and Etching

Micromachined piezoresistive proximal probe with integrated bimorph actuator for aligned single ion implantation

A. Persaud; K. Ivanova; Y. Sarov; Tzv. Ivanov; B. E. Volland; I. W. Rangelow; N. Nikolov; T. Schenkel; V. Djakov; D. W. K. Jenkins; J. Meijer; T. Vogel

J. Vac. Sci. Technol. B 24, 3148–3151 (2006) https://doi.org/10.1116/1.2375079

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Characterization of hydrogen silsesquioxane as a ${Cl}_{2} ∕ B {Cl}_{3}$ inductively coupled plasma etch mask for air-clad InP-based quantum well waveguide fabrication

D. Park; T. H. Stievater; W. S. Rabinovich; N. Green; S. Kanakaraju; L. C. Calhoun

J. Vac. Sci. Technol. B 24, 3152–3156 (2006) https://doi.org/10.1116/1.2395952

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Enhancing etch resistance of hydrogen silsesquioxane via postdevelop electron curing

Joel K. W. Yang; Vikas Anant; Karl K. Berggren

J. Vac. Sci. Technol. B 24, 3157–3161 (2006) https://doi.org/10.1116/1.2395949

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Etching of Pyrex glass substrates by inductively coupled plasma reactive ion etching for micro/nanofluidic devices

Hyun Chul Jung; Wu Lu; Shengnian Wang; L. James Lee; Xin Hu

J. Vac. Sci. Technol. B 24, 3162–3164 (2006) https://doi.org/10.1116/1.2388959

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Electron beam induced deposition of low resistivity platinum from $Pt {(P F_{3})}_{4}$

John D. Barry; Matthew Ervin; Jay Molstad; Alma Wickenden; Todd Brintlinger; Patrik Hoffman; John Meingailis

J. Vac. Sci. Technol. B 24, 3165–3168 (2006) https://doi.org/10.1116/1.2395962

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Mechanical property evaluation of Au-coated nanospring fabricated by combination of focused-ion-beam chemical vapor deposition and sputter coating

Ken-ichiro Nakamatsu; Kazuhiro Kanda; Yuichi Haruyama; Toshinari Ichihashi; Takashi Kaito; Shinji Matsui

J. Vac. Sci. Technol. B 24, 3169–3172 (2006) https://doi.org/10.1116/1.2397068

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Directed Assembly

Precise positioning of single-walled carbon nanotubes by ac dielectrophoresis

Sarbajit Banerjee; Brian E. White; Limin Huang; Blake J. Rego; Stephen O’Brien; Irving P. Herman

J. Vac. Sci. Technol. B 24, 3173–3178 (2006) https://doi.org/10.1116/1.2387155

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Control of an electrospinning jet using electric focusing and jet-steering fields

Leon M. Bellan; H. G. Craighead

J. Vac. Sci. Technol. B 24, 3179–3183 (2006) https://doi.org/10.1116/1.2363403

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Contactless capturing of particles in liquid using pulsed alternating dielectrophoresis

Cheng-Ping Luo; Andreas Heeren; Wolfgang Henschel; Monika Fleischer; Dieter P. Kern

J. Vac. Sci. Technol. B 24, 3184–3187 (2006) https://doi.org/10.1116/1.2366630

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Highly porous silicon membrane fabrication using polymer self-assembly

C. T. Black; K. W. Guarini; G. Breyta; M. C. Colburn; R. Ruiz; R. L. Sandstrom; E. M. Sikorski; Y. Zhang

J. Vac. Sci. Technol. B 24, 3188–3191 (2006) https://doi.org/10.1116/1.2366700

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Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires

H.-S. Jeon; C.-W. Cho; C.-H. Lim; B. Park; H. Ju; S. Kim; S.-B. Lee

J. Vac. Sci. Technol. B 24, 3192–3195 (2006) https://doi.org/10.1116/1.2375083

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Gold nanoparticle wires made using RNA-based self-assembly

D. R. S. Cumming; A. D. Bates; B. P. Callen; J. M. Cooper; R. Cosstick; C. Geary; A. Glidle; L. Jaeger; J. L. Pearson; M. Proupín-Pérez; C. Xu

J. Vac. Sci. Technol. B 24, 3196–3199 (2006) https://doi.org/10.1116/1.2363404

Abstract

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Extensions of molecular ruler technology for nanoscale patterning

C. Srinivasan; M. E. Anderson; E. M. Carter; J. N. Hohman; S. S. N. Bharadwaja; S. Trolier-McKinstry; P. S. Weiss; M. W. Horn

J. Vac. Sci. Technol. B 24, 3200–3204 (2006) https://doi.org/10.1116/1.2393252

Abstract

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Ultrafast patterning of nanoparticles by electrostatic lithography

Jaebum Joo; SangJun Moon; Joseph M. Jacobson

J. Vac. Sci. Technol. B 24, 3205–3208 (2006) https://doi.org/10.1116/1.2363407

Abstract

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Nanoelectronic and Nanomagnetic Devices

Approach to variable frequency measurements of carbon nanotube transistors

Islamshah Amlani; Jonathan Lewis; Ruth Zhang; Kevin Nordquist; Steve Rockwell; Dan Woodward

J. Vac. Sci. Technol. B 24, 3209–3212 (2006) https://doi.org/10.1116/1.2397070

Abstract

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$1 ‐ to 2 ‐ nm$ -wide nanogaps fabricated with single-walled carbon nanotube shadow masks

E. P. De Poortere; H. L. Stormer; L. M. Huang; S. J. Wind; S. O’Brien; M. Huang; J. Hone

J. Vac. Sci. Technol. B 24, 3213–3216 (2006) https://doi.org/10.1116/1.2375081

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Fabrication and characterization of novel cross point structures for molecular electronic integrated circuits

Wei Chen; Xueqing Liu; Zhongkui Tan; Konstantin K. Likharev; James E. Lukens; Andreas Mayr

J. Vac. Sci. Technol. B 24, 3217–3220 (2006) https://doi.org/10.1116/1.2366618

Abstract

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Threshold voltage adjustment on spherical, single-crystal silicon substrates by focused ion beam implantation

V. Zomorrodian; B. Craver; G. Radhakrishnan; M. Patel; E. J. Charlson; P. Ruchhoeft; J. C. Wolfe

J. Vac. Sci. Technol. B 24, 3221–3226 (2006) https://doi.org/10.1116/1.2387152

Abstract

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Chemically responsive molecular transistors fabricated by self-aligned lithography and chemical self-assembly

J. Tang; Y. Wang; C. Nuckolls; S. J. Wind

J. Vac. Sci. Technol. B 24, 3227–3229 (2006) https://doi.org/10.1116/1.2357968

Abstract

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Super-self-aligned back-gate∕double-gate planar transistors: Novel fabrication approach

Hao Lin; Haitao Liu; Arvind Kumar; Uygar Avci; Jay S. Van Delden; Sandip Tiwari

J. Vac. Sci. Technol. B 24, 3230–3233 (2006) https://doi.org/10.1116/1.2397067

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Directly patterning ferroelectric films by nanoimprint lithography with low temperature and low pressure

K. C. Hsieh; H. L. Chen; C. H. Lin; C. Y. Lee

J. Vac. Sci. Technol. B 24, 3234–3238 (2006) https://doi.org/10.1116/1.2395958

Abstract

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MEMS, NEMS, and Nanophotonics

Characterization and operation of a mechanically actuated silicon microgripper

Marius M. Blideran; Monika Fleischer; Wolfgang Henschel; Dieter P. Kern; Jochen Sterr; Klaus Schock; Stephan Kleindiek; Matthias G. Langer; Karsten Löffler; Francois Grauvogel

J. Vac. Sci. Technol. B 24, 3239–3243 (2006) https://doi.org/10.1116/1.2357961

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Accurate resonant frequency spacing of microring filters without postfabrication trimming

C. W. Holzwarth; T. Barwicz; M. A. Popović; P. T. Rakich; E. P. Ippen; F. X. Kärtner; Henry I. Smith

J. Vac. Sci. Technol. B 24, 3244–3247 (2006) https://doi.org/10.1116/1.2363402

Abstract

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Reproduction of the Morpho blue by nanocasting lithography

Akira Saito; Yusuke Miyamura; Masaki Nakajima; Yoko Ishikawa; Kenji Sogo; Yuji Kuwahara; Yoshihiko Hirai

J. Vac. Sci. Technol. B 24, 3248–3251 (2006) https://doi.org/10.1116/1.2395950

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Wafer-scale fabrication of polymer distributed feedback lasers

M. B. Christiansen; M. Schøler; S. Balslev; R. B. Nielsen; D. H. Petersen; A. Kristensen

J. Vac. Sci. Technol. B 24, 3252–3257 (2006) https://doi.org/10.1116/1.2387154

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Nanobiology and Nanomedicine

Progress towards tubes with regular nanopatterned inner surfaces

K. Seunarine; M. Tormen; N. Gadegaard; M. Riehle; C. D. W. Wilkinson; L. Businaro; F. Romanato

J. Vac. Sci. Technol. B 24, 3258–3262 (2006) https://doi.org/10.1116/1.2357970

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Letters

Acid generation efficiency in a model system of chemically amplified extreme ultraviolet resist

Takahiro Kozawa; Seiichi Tagawa; Hiroaki Oizumi; Iwao Nishiyama

J. Vac. Sci. Technol. B 24, L27–L30 (2006) https://doi.org/10.1116/1.2393297

Abstract

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