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March 2006
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
In this Issue
Regular Articles
Electrical conductivity of high aspect ratio trenches in chemical-vapor deposition W technology
J. Vac. Sci. Technol. B 24, 523–533 (2006)
https://doi.org/10.1116/1.2166859
Formation of body-centered-cubic tantalum via sputtering on low- dielectrics at low temperatures
J. Vac. Sci. Technol. B 24, 534–538 (2006)
https://doi.org/10.1116/1.2166860
Nanofabrication module integrated with optical aligner
Colin Stuart; Qianfei Xu; Ricky J. Tseng; Yang Yang; H. Thomas Hahn; Yong Chen; Wei Wu; R. Stanley Williams
J. Vac. Sci. Technol. B 24, 539–542 (2006)
https://doi.org/10.1116/1.2166861
Hot-wire chemical-vapor-deposited nanometer range diffusion barrier films for ultralarge-scale-integrated application
J. Vac. Sci. Technol. B 24, 543–546 (2006)
https://doi.org/10.1116/1.2166862
Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy secondary-ion-mass spectrometry
J. Vac. Sci. Technol. B 24, 547–553 (2006)
https://doi.org/10.1116/1.2167986
High-resolution three-dimensional reconstruction: A combined scanning electron microscope and focused ion-beam approach
J. Vac. Sci. Technol. B 24, 554–561 (2006)
https://doi.org/10.1116/1.2167987
Microelectronically fabricated /polycrystalline-silicon power cells planarized by chemical mechanical polishing
J. Vac. Sci. Technol. B 24, 562–569 (2006)
https://doi.org/10.1116/1.2167989
Impact of supercritical drying on roughness of hydrogen silsesquioxane e-beam resist
Daniel Küpper; David Küpper; Thorsten Wahlbrink; Wolfgang Henschel; Jens Bolten; Max C. Lemme; Yordan M. Georgiev; Heinrich Kurz
J. Vac. Sci. Technol. B 24, 570–574 (2006)
https://doi.org/10.1116/1.2167990
gate dielectrics produced by ultraviolet ozone oxidation for and transistors
Yuvaraj Dora; Sooyeon Han; Dmitri Klenov; Peter J. Hansen; Kwang-soo No; Umesh K. Mishra; Susanne Stemmer; James S. Speck
J. Vac. Sci. Technol. B 24, 575–581 (2006)
https://doi.org/10.1116/1.2167991
Pattern formation by erosion sputtering on GaSb: Transition from dot to ripple formation and influence of impurities
J. Vac. Sci. Technol. B 24, 582–586 (2006)
https://doi.org/10.1116/1.2170100
Real-time reflectometry-controlled focused-electron-beam-induced deposition of transparent materials
J. Vac. Sci. Technol. B 24, 587–591 (2006)
https://doi.org/10.1116/1.2170096
Self-organized Cu nanowires on glass and Si substrates from sputter etching Cu/substrate interfaces
J. Vac. Sci. Technol. B 24, 592–598 (2006)
https://doi.org/10.1116/1.2172249
Use of nanoparticles as etch mask to generate Si nanorods by reactive ion etch
J. Vac. Sci. Technol. B 24, 599–603 (2006)
https://doi.org/10.1116/1.2172251
Three primary color luminescence from natively and thermally oxidized nanocrystalline silicon
J. Vac. Sci. Technol. B 24, 604–607 (2006)
https://doi.org/10.1116/1.2172253
Dopant diffusion modeling for heteroepitaxial devices
J. Vac. Sci. Technol. B 24, 608–612 (2006)
https://doi.org/10.1116/1.2170095
Mechanism of solid-liquid-solid on the silicon oxide nanowire growth
J. Vac. Sci. Technol. B 24, 613–617 (2006)
https://doi.org/10.1116/1.2172953
Statistical variation analysis of sub--sized electron-beam-induced deposits
J. Vac. Sci. Technol. B 24, 618–622 (2006)
https://doi.org/10.1116/1.2170099
Modeling of field-assisted emission from the image states of a glass substrate
J. Vac. Sci. Technol. B 24, 629–633 (2006)
https://doi.org/10.1116/1.2174029
Explicit expression on specifications of mask mean to target and mask uniformity
J. Vac. Sci. Technol. B 24, 634–638 (2006)
https://doi.org/10.1116/1.2172250
Role of neutral molecule chemistry in electron cyclotron resonance microwave plasmas capable of diamond deposition
J. Vac. Sci. Technol. B 24, 643–650 (2006)
https://doi.org/10.1116/1.2174028
Low temperature, ion-enhanced, implanted photoresist removal
J. Vac. Sci. Technol. B 24, 651–656 (2006)
https://doi.org/10.1116/1.2178366
Surface characterization of ion-enhanced implanted photoresist removal
J. Vac. Sci. Technol. B 24, 657–663 (2006)
https://doi.org/10.1116/1.2178367
Fabrication of sub-transistor via holes for small and efficient power amplifiers using highly selective wet etching
J. Vac. Sci. Technol. B 24, 664–668 (2006)
https://doi.org/10.1116/1.2178368
Improved dc and microwave performance of heterojunction bipolar transistors by full sulfur passivation
Shiou-Ying Cheng; Ssu-I Fu; Kuei-Yi Chu; Po-Hsien Lai; Li-Yang Chen; Wen-Chau Liu; Meng-Hsueh Chiang
J. Vac. Sci. Technol. B 24, 669–674 (2006)
https://doi.org/10.1116/1.2178370
Surface roughness of etched by plasma and annealing effect
J. Vac. Sci. Technol. B 24, 675–677 (2006)
https://doi.org/10.1116/1.2178371
Electron beam induced deposition of pure, nanoscale Ge
J. Vac. Sci. Technol. B 24, 678–681 (2006)
https://doi.org/10.1116/1.2178372
Nondestructive metrology for nanoimprint processes
J. Vac. Sci. Technol. B 24, 686–689 (2006)
https://doi.org/10.1116/1.2179457
Simulation of vertical and lateral ZnO light-emitting diodes
J. Vac. Sci. Technol. B 24, 690–694 (2006)
https://doi.org/10.1116/1.2180255
Growth of gallium nitride nanorods by metalorganic molecular beam epitaxy
J. Vac. Sci. Technol. B 24, 695–699 (2006)
https://doi.org/10.1116/1.2172252
First principles calculations of dopant solubility based on strain compensation and direct binding between dopants and group IV impurities
J. Vac. Sci. Technol. B 24, 700–704 (2006)
https://doi.org/10.1116/1.2179458
Process integration and development of inverted photonic crystal arrays
J. Vac. Sci. Technol. B 24, 705–709 (2006)
https://doi.org/10.1116/1.2180254
Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high- dielectrics
Heinrich D. B. Gottlob; Thomas Mollenhauer; Thorsten Wahlbrink; Mathias Schmidt; Tim Echtermeyer; Johnson K. Efavi; Max C. Lemme; Heinrich Kurz
J. Vac. Sci. Technol. B 24, 710–714 (2006)
https://doi.org/10.1116/1.2180256
Raman study of multiwalled carbon nanotubes functionalized with oxygen groups
J. Vac. Sci. Technol. B 24, 715–720 (2006)
https://doi.org/10.1116/1.2180257
Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory
Cheol-Jung Kim; Soon-Gil Yoon; Kyu-Jeong Choi; Sang-Ouk Ryu; Sung-Min Yoon; Nam-Yeal Lee; Byoung-Gon Yu
J. Vac. Sci. Technol. B 24, 721–724 (2006)
https://doi.org/10.1116/1.2180260
Quantitative characterization of the surface morphology using a height difference correlation function
J. Vac. Sci. Technol. B 24, 725–729 (2006)
https://doi.org/10.1116/1.2180261
Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy mode
D. I. Garcia-Gutierrez; M. Jose-Yacaman; A. A. Khajetoorians; C. K. Shih; X.-D. Wang; D. Pham; H. Celio; A. Diebold
J. Vac. Sci. Technol. B 24, 730–738 (2006)
https://doi.org/10.1116/1.2181574
Nanostructures on oxidized Si surfaces fabricated with the scanning tunneling microscope tip under electron-beam irradiation
J. Vac. Sci. Technol. B 24, 739–743 (2006)
https://doi.org/10.1116/1.2181575
Comparison of electrical and reliability performances of -, -, and -based Ohmic contacts on
J. Vac. Sci. Technol. B 24, 744–749 (2006)
https://doi.org/10.1116/1.2181578
Gas phase chemomechanical modification of silicon
J. Vac. Sci. Technol. B 24, 750–755 (2006)
https://doi.org/10.1116/1.2178369
Reactive ion etching induced damage evaluation for optoelectronic device fabrication
J. Vac. Sci. Technol. B 24, 756–761 (2006)
https://doi.org/10.1116/1.2181576
High-accuracy determination of epitaxial AlGaAs composition with inductively coupled plasma optical emission spectroscopy
J. Vac. Sci. Technol. B 24, 762–767 (2006)
https://doi.org/10.1116/1.2181579
Simulation of the spatial distribution and molecular weight of polymethylmethacrylate fragments in electron beam lithography exposures
J. Vac. Sci. Technol. B 24, 768–779 (2006)
https://doi.org/10.1116/1.2181580
Real-time observation and optimization of tungsten atomic layer deposition process cycle
J. Vac. Sci. Technol. B 24, 780–789 (2006)
https://doi.org/10.1116/1.2184320
Microcathodoluminescence and electrical properties of GaN epitaxial layers grown on thick freestanding GaN substrates
J. Vac. Sci. Technol. B 24, 790–794 (2006)
https://doi.org/10.1116/1.2184322
Chemical shrinkage material: Nanoscale patterning through interpolymer complex
Mitsuhiro Hata; Jung-Hwan Hah; Hyun-Woo Kim; Man-Hyoung Ryoo; Sang-Jun Choi; Sang-Gyun Woo; Han-Ku Cho
J. Vac. Sci. Technol. B 24, 795–799 (2006)
https://doi.org/10.1116/1.2184323
Honeycomb GaN micro-light-emitting diodes
J. Vac. Sci. Technol. B 24, 800–802 (2006)
https://doi.org/10.1116/1.2184324
Bottom-up fill mechanisms of electroless copper plating with addition of mercapto alkyl carboxylic acid
J. Vac. Sci. Technol. B 24, 803–806 (2006)
https://doi.org/10.1116/1.2167988
Polymer to polymer to polymer pattern transfer: Multiple molding for scale lithography
J. Vac. Sci. Technol. B 24, 807–812 (2006)
https://doi.org/10.1116/1.2184327
Assembled microelectromechanical system microcolumns for miniature scanning electron microscopies
J. Vac. Sci. Technol. B 24, 813–817 (2006)
https://doi.org/10.1116/1.2178374
Solvent enhanced resist flow for room temperature imprint lithography
J. Vac. Sci. Technol. B 24, 818–822 (2006)
https://doi.org/10.1116/1.2180258
Experimental and computational studies of phase shift lithography with binary elastomeric masks
J. Vac. Sci. Technol. B 24, 828–835 (2006)
https://doi.org/10.1116/1.2184321
Accurate focused ion beam sculpting of silicon using a variable pixel dwell time approach
J. Vac. Sci. Technol. B 24, 836–844 (2006)
https://doi.org/10.1116/1.2184325
Buffer controlled GaN nanorods growth on Si(111) substrates by plasma-assisted molecular beam epitaxy
J. Vac. Sci. Technol. B 24, 845–851 (2006)
https://doi.org/10.1116/1.2186342
Brief Reports and Comments
X-ray photoelectron spectroscopy depth profile of chemically modified porous silicon
J. Vac. Sci. Technol. B 24, 852–854 (2006)
https://doi.org/10.1116/1.2178373
Improvement on superhydrophobic behavior of carbon nanofibers via the design of experiment and analysis of variance
J. Vac. Sci. Technol. B 24, 855–859 (2006)
https://doi.org/10.1116/1.2184326
PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE
Field Emission Theory, Modeling and Simulation
Field-enhanced photoemission from metals and coated materials
J. Vac. Sci. Technol. B 24, 863–868 (2006)
https://doi.org/10.1116/1.2183780
Properties of a field emitter deduced from curvature of its Fowler-Nordheim plot
J. Vac. Sci. Technol. B 24, 869–873 (2006)
https://doi.org/10.1116/1.2179456
Quantum size dependence of electron distribution on carbon nanotubes and its influence on field emission
J. Vac. Sci. Technol. B 24, 874–880 (2006)
https://doi.org/10.1116/1.2185651
Coherent and sequential tunneling mechanisms for field electron emission through layers of wide band gap materials
J. Vac. Sci. Technol. B 24, 881–886 (2006)
https://doi.org/10.1116/1.2180264
Temperature dependence of the work function of the Schottky electron source in typical operating conditions and its effect on beam brightness
J. Vac. Sci. Technol. B 24, 887–891 (2006)
https://doi.org/10.1116/1.2181989
Full scale simulation of a field-emitter arrays based electron source for free-electron lasers
J. Vac. Sci. Technol. B 24, 892–897 (2006)
https://doi.org/10.1116/1.2181988
Statistical modeling of field-enhancement-factor distribution of nanostructured carbon films
J. Vac. Sci. Technol. B 24, 898–902 (2006)
https://doi.org/10.1116/1.2174022
Simulations of emission characteristics of a multigated single carbon nanotube field emitter
J. Vac. Sci. Technol. B 24, 903–908 (2006)
https://doi.org/10.1116/1.2181990
Theoretical analysis of triple junction field emission for a type of cold cathode
J. Vac. Sci. Technol. B 24, 909–912 (2006)
https://doi.org/10.1116/1.2185650
Analysis of the energy distribution of field electrons from metals and semiconductors
J. Vac. Sci. Technol. B 24, 913–917 (2006)
https://doi.org/10.1116/1.2183778
Simulation study of junction effect on field emission from one-dimensional nanostructure grown on silicon substrate
J. Vac. Sci. Technol. B 24, 918–923 (2006)
https://doi.org/10.1116/1.2165670
High Frequency Applications of Field Emission
Smith-Purcell radiation from ultraviolet to infrared using a Si field emitter
J. Vac. Sci. Technol. B 24, 924–926 (2006)
https://doi.org/10.1116/1.2174023
rf microelectromechanical system device with a lateral field-emission detector
J. Vac. Sci. Technol. B 24, 927–931 (2006)
https://doi.org/10.1116/1.2177231
Novel Field Emission Materials and Devices
Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment
J. Vac. Sci. Technol. B 24, 932–935 (2006)
https://doi.org/10.1116/1.2180262
HfC field emitter array controlled by built-in poly-Si thin film transistor
J. Vac. Sci. Technol. B 24, 936–939 (2006)
https://doi.org/10.1116/1.2183779
Field emission characteristics of CuO nanowires grown on brown-oxide-coated Cu films on Si substrates by conductive heating in air
J. Vac. Sci. Technol. B 24, 940–944 (2006)
https://doi.org/10.1116/1.2183788
Electrical and emission properties of nanocomposite and films
J. Vac. Sci. Technol. B 24, 945–949 (2006)
https://doi.org/10.1116/1.2183787
Development of microfocused x-ray source by using carbon nanotube field emitter
J. Vac. Sci. Technol. B 24, 950–952 (2006)
https://doi.org/10.1116/1.2183785
Single-mask multiple lateral nanodiamond field emission devices fabrication technique
J. Vac. Sci. Technol. B 24, 953–957 (2006)
https://doi.org/10.1116/1.2185653
Electron field-emission properties of nanocomposite layers
J. Vac. Sci. Technol. B 24, 958–961 (2006)
https://doi.org/10.1116/1.2165669
Study of the triode structure in a field emission display element
J. Vac. Sci. Technol. B 24, 962–966 (2006)
https://doi.org/10.1116/1.2183782
Field emission from H- and O-terminated heavily P-doped homoepitaxial diamond
Takatoshi Yamada; Hiromitsu Kato; Shin-ichi Shikata; Christoph E. Nebel; Hishato Yamaguchi; Yuki Kudo; Ken Okano
J. Vac. Sci. Technol. B 24, 967–970 (2006)
https://doi.org/10.1116/1.2180263
Electron emission from planar-type cathodes based on nanocrystalline silicon thin films
J. Vac. Sci. Technol. B 24, 971–973 (2006)
https://doi.org/10.1116/1.2183781
Nanoseconds field emitted current pulses from ZrC needles and field emitter arrays
R. Ganter; R. J. Bakker; R. Betemps; M. Dehler; T. Gerber; J. Gobrecht; C. Gough; M. Johnson; E. Kirk; G. Knopp; F. Le Pimpec; K. Li; M. Paraliev; M. Pedrozzi; L. Rivkin; H. Sehr; L. Schulz; A. Wrulich
J. Vac. Sci. Technol. B 24, 974–978 (2006)
https://doi.org/10.1116/1.2174025
Field Emission from Carbon Nanotubes
Improvement of emission characteristics uniformity of carbon nanotube field emission display by surface treatment
Tetsuya Shiroishi; Akihiko Hosono; Atsuhiro Sono; Kunihiko Nishimura; Yousuke Suzuki; Shuhei Nakata; Soichiro Okuda
J. Vac. Sci. Technol. B 24, 979–982 (2006)
https://doi.org/10.1116/1.2172955
Quantum effect in the field emission of carbon nanotubes
J. Vac. Sci. Technol. B 24, 983–987 (2006)
https://doi.org/10.1116/1.2167089
current density from microgated carbon nanotube field-emitter arrays grown by dc plasma chemical-vapor deposition
J. Vac. Sci. Technol. B 24, 988–992 (2006)
https://doi.org/10.1116/1.2165666
Total energy distribution of field emission electrons from a film of carbon nanopearls
J. Vac. Sci. Technol. B 24, 993–996 (2006)
https://doi.org/10.1116/1.2177232
Vertically aligned carbon nanotube arrays for giant field emission displays
J. Vac. Sci. Technol. B 24, 997–1003 (2006)
https://doi.org/10.1116/1.2179454
Growth characteristics of carbon nanotubes on nanotip-formed substrate
Hideki Sato; Mai Matsubayashi; Takamichi Sakai; Koichi Hata; Hideto Miyake; Kazumasa Hiramatsu; Akinori Oshita; Yahachi Saito
J. Vac. Sci. Technol. B 24, 1004–1007 (2006)
https://doi.org/10.1116/1.2167985
Carbon nanostructure field emission devices
J. Vac. Sci. Technol. B 24, 1008–1012 (2006)
https://doi.org/10.1116/1.2181987
Surface treatment of carbon nanotube cathodes with glass fillers using KrF excimer laser for field-emission displays
J. Vac. Sci. Technol. B 24, 1013–1016 (2006)
https://doi.org/10.1116/1.2183784
Synthesis and emission properties of carbon nanotubes grown by sandwich catalyst stacks
J. Vac. Sci. Technol. B 24, 1017–1020 (2006)
https://doi.org/10.1116/1.2167088
Industrial Applications
Fabrication of active-matrix high-efficiency electron emission device and its application to high-sensitivity image sensing
Nobuyasu Negishi; Ryota Tanaka; Tomonari Nakada; Kazuto Sakemura; Yoshiyuki Okuda; Hideo Satoh; Atsushi Watanabe; Takamasa Yoshikawa; Kiyohide Ogasawara; Masakazu Nanba; Saburo Okazaki; Kenkichi Tanioka; Norifumi Egami; Nobuyoshi Koshida
J. Vac. Sci. Technol. B 24, 1021–1025 (2006)
https://doi.org/10.1116/1.2165667
All-inverter complementary metal oxide semiconductor based dose control circuit for using vertically aligned carbon nanofibers in maskless lithography
S. K. Islam; C. Durisety; R. Vijayaraghavan; B. J. Blalock; T. Grundman; L. R. Baylor; W. L. Gardner
J. Vac. Sci. Technol. B 24, 1026–1029 (2006)
https://doi.org/10.1116/1.2183783
Ultracompact electron-beam column
J. Vac. Sci. Technol. B 24, 1030–1034 (2006)
https://doi.org/10.1116/1.2179455
Amorphous selenium based photodetector driven by field emission current from N-doped diamond cold cathode
Nanako Kato; Ichitaro Saito; Hisato Yamaguchi; Hideki Okamura; Ken Okano; Takatoshi Yamada; Tim Butler; Nalin L. Rupesinghe; Gehan A. J. Amaratunga
J. Vac. Sci. Technol. B 24, 1035–1039 (2006)
https://doi.org/10.1116/1.2185652
Space Applications
Microchannel plates at high rates: The challenges for future space plasma missions
J. Vac. Sci. Technol. B 24, 1040–1044 (2006)
https://doi.org/10.1116/1.2183786
Field Emission Characterization and Analysis
Parameter dispersion characterization for arrays of HfC-coated emitters on poly-Si substrate
J. Vac. Sci. Technol. B 24, 1045–1051 (2006)
https://doi.org/10.1116/1.2184330
Study on the field-emission characteristics of films
J. Vac. Sci. Technol. B 24, 1052–1055 (2006)
https://doi.org/10.1116/1.2184329
Variability in long-duration operation of silicon tip field emission devices
J. Vac. Sci. Technol. B 24, 1056–1060 (2006)
https://doi.org/10.1116/1.2177229
Improved current densities of carbon nanotube cathodes by pulsed operation
J. Vac. Sci. Technol. B 24, 1067–1071 (2006)
https://doi.org/10.1116/1.2184328
Investigation of fabrication uniformity and emission reliability of silicon field emitters for use in space
L. Wang; K. L. Aplin; S. E. Huq; B. J. Kent; R. Stevens; A. Malik; H. O. Blom; I. M. Loader; G. R. Thomas
J. Vac. Sci. Technol. B 24, 1072–1075 (2006)
https://doi.org/10.1116/1.2165668
Letters
High density plasma chemical vapor deposition gap-fill mechanisms
J. Vac. Sci. Technol. B 24, L11–L15 (2006)
https://doi.org/10.1116/1.2178364
Ohmic contact scheme for high electron mobility transistors annealed at 500 °C
J. Vac. Sci. Technol. B 24, L16–L18 (2006)
https://doi.org/10.1116/1.2178365
Innovative approach for replicating micropatterns in a conducting polymer
J. Vac. Sci. Technol. B 24, L19–L22 (2006)
https://doi.org/10.1116/1.2186341
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry
Shiva Mudide, Nick Keller, et al.