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Review Article

Photomask plasma etching: A review

Banqiu Wu

J. Vac. Sci. Technol. B 24, 1–15 (2006) https://doi.org/10.1116/1.2162580

Abstract

View articletitled, Photomask plasma etching: A review

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Regular Articles

Single-wafer-processed trench-sidewall integration and its application in a micro resonant detector for vacuum monitoring

Xinxin Li; Wei Xu; Ying Chen; Le Luo; Lei Gu; Min Liu; Baoluo Cheng; Yuelin Wang

J. Vac. Sci. Technol. B 24, 16–19 (2006) https://doi.org/10.1116/1.2137337

Abstract

View articletitled, Single-wafer-processed trench-sidewall integration and its application in a micro resonant detector for vacuum monitoring

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Synthesis of single crystalline silicon nanowires and investigation of their electron field emission

Devon McClain; Raj Solanki; Lifeng Dong; Jun Jiao

J. Vac. Sci. Technol. B 24, 20–24 (2006) https://doi.org/10.1116/1.2137338

Abstract

View articletitled, Synthesis of single crystalline silicon nanowires and investigation of their electron field emission

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Investigation of the nonuniformities in polyurethane chemical mechanical planarization pads

Parshuram B. Zantye; Ashok Kumar; William Dallas; Sergei Ostapenko; Arun K. Sikder

J. Vac. Sci. Technol. B 24, 25–33 (2006) https://doi.org/10.1116/1.2137339

Abstract

View articletitled, Investigation of the nonuniformities in polyurethane chemical mechanical planarization pads

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Optical investigation of the interdot carrier transfer process in $In As ∕ Ga As$ quantum-dot heterosystems

Tzer-En Nee; Jen-Cheng Wang; Hui-Tang Shen; Chao-Ching Cheng; Ray-Ming Lin

J. Vac. Sci. Technol. B 24, 34–37 (2006) https://doi.org/10.1116/1.2138719

Abstract

View articletitled, Optical investigation of the interdot carrier transfer process in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> quantum-dot heterosystems

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Quantum charge transportation in metal-oxide-Si structures with ultrathin oxide

V. Filip; Hei Wong; D. Nicolaescu

J. Vac. Sci. Technol. B 24, 38–45 (2006) https://doi.org/10.1116/1.2138720

Abstract

View articletitled, Quantum charge transportation in metal-oxide-Si structures with ultrathin oxide

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Optical properties of $B C_{3}$ nanotubes

S. C. Chen; I. Y. Chen; Y. H. Ho; M. F. Lin

J. Vac. Sci. Technol. B 24, 46–49 (2006) https://doi.org/10.1116/1.2138721

Abstract

View articletitled, Optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">B</mi><msub><mi mathvariant="normal">C</mi><mn>3</mn></msub></mrow></math> nanotubes

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Fabrication of short-wavelength photonic crystals in wide-band-gap nanocrystalline diamond films

Jeffrey W. Baldwin; Maxim Zalalutdinov; Tatyana Feygelson; James E. Butler; Brian H. Houston

J. Vac. Sci. Technol. B 24, 50–54 (2006) https://doi.org/10.1116/1.2138722

Abstract

View articletitled, Fabrication of short-wavelength photonic crystals in wide-band-gap nanocrystalline diamond films

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Nanostenciling through a ${cm}^{2}$ -wide silicon membrane

Vincent Blech; Takama Nobuyuki; Beomjoon Kim

J. Vac. Sci. Technol. B 24, 55–58 (2006) https://doi.org/10.1116/1.2140001

Abstract

View articletitled, Nanostenciling through a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msup><mi>cm</mi><mn>2</mn></msup></mrow></math>-wide silicon membrane

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Self-aligned cathodes in recessed geometry for reduced gate currents in nanostructured carbon triodes

Sungil Bae; Kyung Ho Park; Soonil Lee; Ken Ha Koh

J. Vac. Sci. Technol. B 24, 59–63 (2006) https://doi.org/10.1116/1.2141625

Abstract

View articletitled, Self-aligned cathodes in recessed geometry for reduced gate currents in nanostructured carbon triodes

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Modeling radiation-induced carbon contamination of extreme ultraviolet optics

Jeromy Hollenshead; Leonard Klebanoff

J. Vac. Sci. Technol. B 24, 64–82 (2006) https://doi.org/10.1116/1.2140005

Abstract

View articletitled, Modeling radiation-induced carbon contamination of extreme ultraviolet optics

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$Co {Si}_{x}$ thermal stability on narrow-width polysilicon resistors

Yen-Ming Chen; George C. Tu; Ying-Lang Wang; Gwo-Jen Hwang; Cheng-Yao Lo

J. Vac. Sci. Technol. B 24, 83–86 (2006) https://doi.org/10.1116/1.2141626

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Co</mi><msub><mi mathvariant="normal">Si</mi><mi>x</mi></msub></mrow></math> thermal stability on narrow-width polysilicon resistors

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Superior electrochemical performance of $C N_{x}$ nanotubes using $Ti {Si}_{2}$ buffer layer on Si substrates

Wei-Chuan Fang; Jin-Hua Huang; Chia-Liang Sun; Li-Chyong Chen; P. Papakonstantinou; Kuei-Hsien Chen

J. Vac. Sci. Technol. B 24, 87–90 (2006) https://doi.org/10.1116/1.2141627

Abstract

View articletitled, Superior electrochemical performance of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">C</mi><msub><mi mathvariant="normal">N</mi><mi>x</mi></msub></mrow></math> nanotubes using <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">Si</mi><mn>2</mn></msub></mrow></math> buffer layer on Si substrates

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Gate oxide reliability in an integrated metal-oxide-semiconductor field-effect transistor-microelectromechanical system technology

Robert M. Fleming; Bruce L. Draper

J. Vac. Sci. Technol. B 24, 91–96 (2006) https://doi.org/10.1116/1.2141628

Abstract

View articletitled, Gate oxide reliability in an integrated metal-oxide-semiconductor field-effect transistor-microelectromechanical system technology

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Experimental characterization of an inductively coupled acetylene/hydrogen plasma for carbon nanofiber synthesis

Y. Y. Lin; H. W. Wei; K. C. Leou; H. Lin; C. H. Tung; M. T. Wei; C. Lin; C. H. Tsai

J. Vac. Sci. Technol. B 24, 97–103 (2006) https://doi.org/10.1116/1.2150221

Abstract

View articletitled, Experimental characterization of an inductively coupled acetylene/hydrogen plasma for carbon nanofiber synthesis

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Etch damage and deposition repair of vertical-cavity surface-emitting lasers

Paul O. Leisher; James J. Raftery, Jr.; Ansas M. Kasten; Kent D. Choquette

J. Vac. Sci. Technol. B 24, 104–107 (2006) https://doi.org/10.1116/1.2150222

Abstract

View articletitled, Etch damage and deposition repair of vertical-cavity surface-emitting lasers

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Advanced electrical imaging of dislocations in Mg–In-codoped GaN films

Sy-Hann Chen; Sheng-Ping Hou; J. H. Hsieh; F. C. Chang; W. K. Chen

J. Vac. Sci. Technol. B 24, 108–112 (2006) https://doi.org/10.1116/1.2150223

Abstract

View articletitled, Advanced electrical imaging of dislocations in Mg–In-codoped GaN films

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Influence of fluorine/carbon atomic ratio on superhydrophobic behavior of carbon nanofiber arrays

Chien-Te Hsieh; Jin-Ming Chen; Yu-Hao Huang; Rong-Rong Kuo; Chung-Tien Li; Han-Chang Shih; Ta-Sen Lin; Chu-Fu Wu

J. Vac. Sci. Technol. B 24, 113–117 (2006) https://doi.org/10.1116/1.2150224

Abstract

View articletitled, Influence of fluorine/carbon atomic ratio on superhydrophobic behavior of carbon nanofiber arrays

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Modeling $extreme ultraviolet ∕ H_{2} O$ oxidation of ruthenium optic coatings

Jeromy Hollenshead; Leonard Klebanoff

J. Vac. Sci. Technol. B 24, 118–130 (2006) https://doi.org/10.1116/1.2150225

Abstract

View articletitled, Modeling <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>extreme ultraviolet</mtext><mo>∕</mo><msub><mi mathvariant="normal">H</mi><mn>2</mn></msub><mi mathvariant="normal">O</mi></mrow></math> oxidation of ruthenium optic coatings

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All-around contact for carbon nanotube field-effect transistors made by ac dielectrophoresis

Zhi-Bin Zhang; Shi-Li Zhang; Eleanor E. B. Campbell

J. Vac. Sci. Technol. B 24, 131–135 (2006) https://doi.org/10.1116/1.2150226

Abstract

View articletitled, All-around contact for carbon nanotube field-effect transistors made by ac dielectrophoresis

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Fabrication of single electron transistors with molecular tunnel barriers using ac dielectrophoresis technique

S. H. Hong; H. K. Kim; K. H. Cho; S. W. Hwang; J. S. Hwang; D. Ahn

J. Vac. Sci. Technol. B 24, 136–138 (2006) https://doi.org/10.1116/1.2150227

Abstract

View articletitled, Fabrication of single electron transistors with molecular tunnel barriers using ac dielectrophoresis technique

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Synthesis and characterization of self-catalyzed $CuO$ nanorods on $Cu ∕ TaN ∕ Si$ assembly using vacuum-arc Cu deposition and vapor-solid reaction

U. S. Chen; Y. L. Chueh; S. H. Lai; L. J. Chou; Han C. Shih

J. Vac. Sci. Technol. B 24, 139–142 (2006) https://doi.org/10.1116/1.2151215

Abstract

View articletitled, Synthesis and characterization of self-catalyzed <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>CuO</mi></mrow></math> nanorods on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Cu</mi><mo>∕</mo><mi>TaN</mi><mo>∕</mo><mi>Si</mi></mrow></math> assembly using vacuum-arc Cu deposition and vapor-solid reaction

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Coulomb blockade behavior in individual multiwalled carbon nanotubes

Y. F. Hsiou; Y. J. Yang; C. D. Chen; C. H. Chan

J. Vac. Sci. Technol. B 24, 143–146 (2006) https://doi.org/10.1116/1.2151216

Abstract

View articletitled, Coulomb blockade behavior in individual multiwalled carbon nanotubes

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Gate-controlled $ZnO$ nanowires for field-emission device application

Seu Yi Li; Chia Ying Lee; Pang Lin; Tseung Yuen Tseng

J. Vac. Sci. Technol. B 24, 147–151 (2006) https://doi.org/10.1116/1.2151217

Abstract

View articletitled, Gate-controlled <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>ZnO</mi></mrow></math> nanowires for field-emission device application

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Growth of $GaAs$ on vicinal Ge surface using low-temperature migration-enhanced epitaxy

H. Tanoto; S. F. Yoon; W. K. Loke; E. A. Fitzgerald; C. Dohrman; B. Narayanan; M. T. Doan; C. H. Tung

J. Vac. Sci. Technol. B 24, 152–156 (2006) https://doi.org/10.1116/1.2151220

Abstract

View articletitled, Growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>GaAs</mi></mrow></math> on vicinal Ge surface using low-temperature migration-enhanced epitaxy

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Electrical transport properties of $GaAs$ structures with a pair of Be and donor impurity delta-doped layers

Y. Idutsu; F. Shimogishi; J. P. Noh; N. Otsuka

J. Vac. Sci. Technol. B 24, 157–162 (2006) https://doi.org/10.1116/1.2151221

Abstract

View articletitled, Electrical transport properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>GaAs</mi></mrow></math> structures with a pair of Be and donor impurity delta-doped layers

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Evolution of sidewall roughness during reactive-ion etching of polymer waveguides

S. K. Pani; C. C. Wong; K. Sudharsanam; C. S. Premachandran; M. K. Iyer

J. Vac. Sci. Technol. B 24, 163–169 (2006) https://doi.org/10.1116/1.2151222

Abstract

View articletitled, Evolution of sidewall roughness during reactive-ion etching of polymer waveguides

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Correction of stray-light-induced proximity effect by complementary double exposure in microlithography

Young-Chang Kim; Peter De Bisschop; Leonardus H. A. Leunissen; Geert Vandenberghe

J. Vac. Sci. Technol. B 24, 170–177 (2006) https://doi.org/10.1116/1.2151224

Abstract

View articletitled, Correction of stray-light-induced proximity effect by complementary double exposure in microlithography

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Ion-implanted edge termination for $GaN$ Schottky diode rectifiers

S. Noor Mohammad; Charles R. Eddy, Jr.; Francis Kub

J. Vac. Sci. Technol. B 24, 178–184 (2006) https://doi.org/10.1116/1.2151225

Abstract

View articletitled, Ion-implanted edge termination for <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>GaN</mi></mrow></math> Schottky diode rectifiers

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Crystallographic and electrical characterization of tungsten carbide thin films for Schottky contact of diamond photodiode

Meiyong Liao; Yasuo Koide; Jose Alvarez

J. Vac. Sci. Technol. B 24, 185–189 (2006) https://doi.org/10.1116/1.2151909

Abstract

View articletitled, Crystallographic and electrical characterization of tungsten carbide thin films for Schottky contact of diamond photodiode

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Electrical resistivity of polycrystalline Cu interconnects with nano-scale linewidth

Masahiro Shimada; Miki Moriyama; Kazuhiro Ito; Susumu Tsukimoto; Masanori Murakami

J. Vac. Sci. Technol. B 24, 190–194 (2006) https://doi.org/10.1116/1.2151910

Abstract

View articletitled, Electrical resistivity of polycrystalline Cu interconnects with nano-scale linewidth

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Room-temperature nanocontact printing using soft template

Ken-ichiro Nakamatsu; Katsuhiko Tone; Hideo Namatsu; Shinji Matsui

J. Vac. Sci. Technol. B 24, 195–199 (2006) https://doi.org/10.1116/1.2151913

Abstract

View articletitled, Room-temperature nanocontact printing using soft template

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Resist reflow process simulation study for contact hole pattern

Sang-Kon Kim

J. Vac. Sci. Technol. B 24, 200–204 (2006) https://doi.org/10.1116/1.2155530

Abstract

View articletitled, Resist reflow process simulation study for contact hole pattern

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Ni-carbon nanotubes nanocomposite for robust microelectromechanical systems fabrication

Li-Nuan Tsai; Yu-Ting Cheng; Wensyang Hsu; Weileun Fang

J. Vac. Sci. Technol. B 24, 205–210 (2006) https://doi.org/10.1116/1.2161222

Abstract

View articletitled, Ni-carbon nanotubes nanocomposite for robust microelectromechanical systems fabrication

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Thermal coupling in multishot laser microvia drilling for interconnection application

B. Tan; K. Venkatakrishnan

J. Vac. Sci. Technol. B 24, 211–215 (2006) https://doi.org/10.1116/1.2162573

Abstract

View articletitled, Thermal coupling in multishot laser microvia drilling for interconnection application

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Prediction of clamping pressure in a Johnsen-Rahbek-type electrostatic chuck based on circuit simulation

S. Kanno; K. Kato; K. Yoshioka; R. Nishio; T. Tsubone

J. Vac. Sci. Technol. B 24, 216–223 (2006) https://doi.org/10.1116/1.2151219

Abstract

View articletitled, Prediction of clamping pressure in a Johnsen-Rahbek-type electrostatic chuck based on circuit simulation

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Electron-beam focusing in 1:1 electron projection lithography system

Vadim Sidorkin; Chang Wook Moon; Bourim El Mostafa; Seung Woon Lee; In Keyong Yoo

J. Vac. Sci. Technol. B 24, 224–230 (2006) https://doi.org/10.1116/1.2162574

Abstract

View articletitled, Electron-beam focusing in 1:1 electron projection lithography system

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Methods for fabricating Ohmic contacts to nanowires and nanotubes

E. Stern; G. Cheng; J. F. Klemic; E. Broomfield; D. Turner-Evans; C. Li; C. Zhou; M. A. Reed

J. Vac. Sci. Technol. B 24, 231–236 (2006) https://doi.org/10.1116/1.2162575

Abstract

View articletitled, Methods for fabricating Ohmic contacts to nanowires and nanotubes

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Doping integrity diagnostics of planar transistor channel structures by scanning nonlinear dielectric microscopy

Takashi Matsukawa; Meishoku Masahara; Hisao Tanoue; Seigo Kanemaru; Eiichi Suzuki

J. Vac. Sci. Technol. B 24, 237–244 (2006) https://doi.org/10.1116/1.2162576

Abstract

View articletitled, Doping integrity diagnostics of planar transistor channel structures by scanning nonlinear dielectric microscopy

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Dependence of local electronic structure in $p$ -type GaN on crystal polarity and presence of inversion domain boundaries

X. Zhou; E. T. Yu; D. S. Green; J. S. Speck

J. Vac. Sci. Technol. B 24, 245–249 (2006) https://doi.org/10.1116/1.2162577

Abstract

View articletitled, Dependence of local electronic structure in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type GaN on crystal polarity and presence of inversion domain boundaries

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Change in electrical resistance caused by stress-induced migration

Minoru Aoyagi

J. Vac. Sci. Technol. B 24, 250–254 (2006) https://doi.org/10.1116/1.2162579

Abstract

View articletitled, Change in electrical resistance caused by stress-induced migration

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Fabrication of hybrid bilayer nanostructure by duo-mold imprinting

Wei Zhao; Hong Yee Low

J. Vac. Sci. Technol. B 24, 255–258 (2006) https://doi.org/10.1116/1.2163881

Abstract

View articletitled, Fabrication of hybrid bilayer nanostructure by duo-mold imprinting

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Optical characterization of ZnMnO-based dilute magnetic semiconductor structures

I. A. Buyanova; W. M. Chen; M. P. Ivill; R. Pate; D. P. Norton; S. J. Pearton; J. W. Dong; A. Osinsky; B. Hertog; A. M. Dabiran; P. P. Chow

J. Vac. Sci. Technol. B 24, 259–262 (2006) https://doi.org/10.1116/1.2163884

Abstract

View articletitled, Optical characterization of ZnMnO-based dilute magnetic semiconductor structures

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Effect of hydrogen plasma exposure on the amount of trans-polyacetylene in nanocrystalline diamond films

Kungen Teii; Tomohiro Ikeda; Atsushi Fukutomi; Kiichiro Uchino

J. Vac. Sci. Technol. B 24, 263–266 (2006) https://doi.org/10.1116/1.2163885

Abstract

View articletitled, Effect of hydrogen plasma exposure on the amount of trans-polyacetylene in nanocrystalline diamond films

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Synthesis and characterization of calixarene derivatives as resist materials for electron-beam lithography

Mirwais Aktary; Kenneth L. Westra; Mark R. Freeman; Yasutaka Tanaka

J. Vac. Sci. Technol. B 24, 267–270 (2006) https://doi.org/10.1116/1.2163887

Abstract

View articletitled, Synthesis and characterization of calixarene derivatives as resist materials for electron-beam lithography

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Nonlinear optical polymer patterned by nanoimprint lithography as a photonic crystal waveguide structure

Motoki Okinaka; Shin-ichiro Inoue; Kazuhito Tsukagoshi; Yoshinobu Aoyagi

J. Vac. Sci. Technol. B 24, 271–273 (2006) https://doi.org/10.1116/1.2151911

Abstract

View articletitled, Nonlinear optical polymer patterned by nanoimprint lithography as a photonic crystal waveguide structure

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Lithographic flare measurements of Intel’s microexposure tool optics

Manish Chandhok; Sang H. Lee; Jeanette Roberts; Bryan J. Rice; Heidi B. Cao

J. Vac. Sci. Technol. B 24, 274–278 (2006) https://doi.org/10.1116/1.2151914

Abstract

View articletitled, Lithographic flare measurements of Intel’s microexposure tool optics

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Nanoscale layer etching by short-time exposure of substrates to gas discharges using moving patterned shutter

G. S. Oehrlein; X. Hua; C. Stolz; P. Jiang

J. Vac. Sci. Technol. B 24, 279–283 (2006) https://doi.org/10.1116/1.2162570

Abstract

View articletitled, Nanoscale layer etching by short-time exposure of substrates to gas discharges using moving patterned shutter

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Thermal simulations of three-dimensional integrated multichip module with GaN power amplifier and Si modulator

T. J. Anderson; F. Ren; L. Covert; J. Lin; S. J. Pearton

J. Vac. Sci. Technol. B 24, 284–287 (2006) https://doi.org/10.1116/1.2163888

Abstract

View articletitled, Thermal simulations of three-dimensional integrated multichip module with GaN power amplifier and Si modulator

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Tunable growth of ZnO nanorods synthesized in aqueous solutions at low temperatures

Chi-Sheng Hsiao; Cheng-Hsiung Peng; San-Yuan Chen; Sz-Chian Liou

J. Vac. Sci. Technol. B 24, 288–291 (2006) https://doi.org/10.1116/1.2163889

Abstract

View articletitled, Tunable growth of ZnO nanorods synthesized in aqueous solutions at low temperatures

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Effect of rapid thermal annealing on the optical and electrical properties of metamorphic high electron mobility transistor structures with composite $In Ga As ∕ In P$ channel

Yuwei Liu; Hong Wang

J. Vac. Sci. Technol. B 24, 292–297 (2006) https://doi.org/10.1116/1.2163890

Abstract

View articletitled, Effect of rapid thermal annealing on the optical and electrical properties of metamorphic high electron mobility transistor structures with composite <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">In</mi><mi mathvariant="normal">P</mi></mrow></math> channel

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Dependence of $Si O_{2}$ etch rate on sidewall angle as affected by bottom materials in a high-density $C H F_{3}$ plasma

Gyeo-Re Lee; Jae-Ho Min; Jin-Kwan Lee; Sang Heup Moon

J. Vac. Sci. Technol. B 24, 298–303 (2006) https://doi.org/10.1116/1.2163892

Abstract

View articletitled, Dependence of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> etch rate on sidewall angle as affected by bottom materials in a high-density <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">C</mi><mi mathvariant="normal">H</mi><msub><mi mathvariant="normal">F</mi><mn>3</mn></msub></mrow></math> plasma

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Luminescent and structural characteristics of ZnO nanorods fabricated by postannealing

Chin-Ching Lin; Hung-Chou Liao; San-Yuan Chen; Syh-Yuh Cheng

J. Vac. Sci. Technol. B 24, 304–307 (2006) https://doi.org/10.1116/1.2163893

Abstract

View articletitled, Luminescent and structural characteristics of ZnO nanorods fabricated by postannealing

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Morphology control of silicon nanotips fabricated by electron cyclotron resonance plasma etching

C. H. Hsu; Y. F. Huang; L. C. Chen; S. Chattopadhyay; K. H. Chen; H. C. Lo; C. F. Chen

J. Vac. Sci. Technol. B 24, 308–311 (2006) https://doi.org/10.1116/1.2163894

Abstract

View articletitled, Morphology control of silicon nanotips fabricated by electron cyclotron resonance plasma etching

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Structural and electrical characterizations of ultrathin ${HfO}_{2}$ gate dielectrics treated by nitrogen-plasma atmosphere

Nak-Jin Seong; Won-Jae Lee; Soon-Gil Yoon

J. Vac. Sci. Technol. B 24, 312–315 (2006) https://doi.org/10.1116/1.2151218

Abstract

View articletitled, Structural and electrical characterizations of ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>HfO</mi><mn>2</mn></msub></mrow></math> gate dielectrics treated by nitrogen-plasma atmosphere

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Resist effects at small pitches

David Van Steenwinckel; Jeroen H. Lammers; Thomas Koehler; Robert L. Brainard; Peter Trefonas

J. Vac. Sci. Technol. B 24, 316–320 (2006) https://doi.org/10.1116/1.2151912

Abstract

View articletitled, Resist effects at small pitches

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Investigation of the magnetic susceptibility of nanocomposites obtained in zero-field-cooled conditions

L. G. Jacobsohn; M. F. Hundley; J. D. Thompson; R. M. Dickerson; M. Nastasi

J. Vac. Sci. Technol. B 24, 321–325 (2006) https://doi.org/10.1116/1.2162571

Abstract

View articletitled, Investigation of the magnetic susceptibility of nanocomposites obtained in zero-field-cooled conditions

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Resist-based measurement of the contrast transfer function in a 0.3 numerical aperture extreme ultraviolet microfield optic

Jason P. Cain; Patrick Naulleau; Costas J. Spanos

J. Vac. Sci. Technol. B 24, 326–330 (2006) https://doi.org/10.1116/1.2162578

Abstract

View articletitled, Resist-based measurement of the contrast transfer function in a 0.3 numerical aperture extreme ultraviolet microfield optic

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Interfacial energy and strength of multiwalled-carbon-nanotube-based dry adhesive

Yang Zhao; Tao Tong; Lance Delzeit; Ali Kashani; M. Meyyappan; Arun Majumdar

J. Vac. Sci. Technol. B 24, 331–335 (2006) https://doi.org/10.1116/1.2163891

Abstract

View articletitled, Interfacial energy and strength of multiwalled-carbon-nanotube-based dry adhesive

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Fabrication of photonic crystals using a spin-coated hydrogen silsesquioxane hard mask

L. O’Faolain; M. V. Kotlyar; N. Tripathi; R. Wilson; T. F. Krauss

J. Vac. Sci. Technol. B 24, 336–339 (2006) https://doi.org/10.1116/1.2164850

Abstract

View articletitled, Fabrication of photonic crystals using a spin-coated hydrogen silsesquioxane hard mask

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Binary blends of diblock copolymers as an effective route to multiple length scales in perfect directed self-assembly of diblock copolymer thin films

Erik W. Edwards; Mark P. Stoykovich; Paul F. Nealey; Harun H. Solak

J. Vac. Sci. Technol. B 24, 340–344 (2006) https://doi.org/10.1116/1.2151226

Abstract

View articletitled, Binary blends of diblock copolymers as an effective route to multiple length scales in perfect directed self-assembly of diblock copolymer thin films

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Aligned carbon nanotubes/fibers for applications in vacuum microwave amplifiers

W. I. Milne; K. B. K. Teo; E. Minoux; O. Groening; L. Gangloff; L. Hudanski; J.-P. Schnell; D. Dieumegard; F. Peauger; I. Y. Y. Bu; M. S. Bell; P. Legagneux; G. Hasko; G. A. J. Amaratunga

J. Vac. Sci. Technol. B 24, 345–348 (2006) https://doi.org/10.1116/1.2161223

Abstract

View articletitled, Aligned carbon nanotubes/fibers for applications in vacuum microwave amplifiers

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Physical and electrical properties of Ta–N, Mo–N, and W–N electrodes on $Hf O_{2}$ high- $k$ gate dielectric

Jiang Lu; Yue Kuo; Somenath Chatterjee; Jun-Yen Tewg

J. Vac. Sci. Technol. B 24, 349–357 (2006) https://doi.org/10.1116/1.2163883

Abstract

View articletitled, Physical and electrical properties of Ta–N, Mo–N, and W–N electrodes on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> gate dielectric

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Brief Reports and Comments

In situ growth of single-walled carbon nanotubes by bimetallic technique with/without dielectric support for nanodevice applications

K. Y. Shin; H. C. Su; C. H. Tsai

J. Vac. Sci. Technol. B 24, 358–361 (2006) https://doi.org/10.1116/1.2151223

Abstract

View articletitled, In situ growth of single-walled carbon nanotubes by bimetallic technique with/without dielectric support for nanodevice applications

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PAPERS FROM THE EIGHTH INTERNATIONAL WORKSHOP ON THE FABRICATION, CHARACTERIZATION, AND MODELING OF ULTRA-SHALLOW DOPING PROFILES IN SEMICONDUCTORS

Characterization of Ultra-Shallow Junctions

Scanning tunneling microscopy detection of individual dopant atoms on wet-prepared Si(111):H surfaces

M. Nishizawa; L. Bolotov; T. Tada; T. Kanayama

J. Vac. Sci. Technol. B 24, 365–369 (2006) https://doi.org/10.1116/1.2162564

Abstract

View articletitled, Scanning tunneling microscopy detection of individual dopant atoms on wet-prepared Si(111):H surfaces

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Scanning capacitance microscopy: Quantitative carrier profiling down to nanostructures

F. Giannazzo; V. Raineri; S. Mirabella; G. Impellizzeri; F. Priolo; M. Fedele; R. Mucciato

J. Vac. Sci. Technol. B 24, 370–374 (2006) https://doi.org/10.1116/1.2151907

Abstract

View articletitled, Scanning capacitance microscopy: Quantitative carrier profiling down to nanostructures

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Extracting active dopant profile information from carrier illumination power curves

Fabian Dortu; Trudo Clarysse; Roger Loo; Wilfried Vandervorst

J. Vac. Sci. Technol. B 24, 375–380 (2006) https://doi.org/10.1116/1.2132322

Abstract

View articletitled, Extracting active dopant profile information from carrier illumination power curves

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Active dopant characterization methodology for germanium

T. Clarysse; P. Eyben; T. Janssens; I. Hoflijk; D. Vanhaeren; A. Satta; M. Meuris; W. Vandervorst; J. Bogdanowicz; G. Raskin

J. Vac. Sci. Technol. B 24, 381–389 (2006) https://doi.org/10.1116/1.2163880

Abstract

View articletitled, Active dopant characterization methodology for germanium

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Unique application of atomic force microscopy and scanning capacitance microscopy-two-dimensional-carrier profiling through thick insulating layers

Kuo-Jen Chao

J. Vac. Sci. Technol. B 24, 390–393 (2006) https://doi.org/10.1116/1.2141623

Abstract

View articletitled, Unique application of atomic force microscopy and scanning capacitance microscopy-two-dimensional-carrier profiling through thick insulating layers

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Room temperature migration of boron in crystalline silicon during secondary ion mass spectrometry profiling

E. Napolitani; D. De Salvador; M. Pesce; A. Carnera; S. Mirabella; F. Priolo

J. Vac. Sci. Technol. B 24, 394–398 (2006) https://doi.org/10.1116/1.2137335

Abstract

View articletitled, Room temperature migration of boron in crystalline silicon during secondary ion mass spectrometry profiling

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Dopant profiling in ${Ni}_{x} {Si}_{1 - x}$ gates with secondary-ion-mass spectroscopy

T. Janssens; M. A. Pawlak; J. A. Kittl; M. Fouchier; A. Lauwers; A. Kottantharayil; W. Vandervorst

J. Vac. Sci. Technol. B 24, 399–403 (2006) https://doi.org/10.1116/1.2141622

Abstract

View articletitled, Dopant profiling in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ni</mi><mi>x</mi></msub><msub><mi mathvariant="normal">Si</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></mrow></math> gates with secondary-ion-mass spectroscopy

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Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures

S.-E. Park; N. V. Nguyen; J. J. Kopanski; J. S. Suehle; E. M. Vogel

J. Vac. Sci. Technol. B 24, 404–407 (2006) https://doi.org/10.1116/1.2162569

Abstract

View articletitled, Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures

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Near-surface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Si

T. H. Buyuklimanli; C. W. Magee; J. W. Marino; S. R. Walther

J. Vac. Sci. Technol. B 24, 408–413 (2006) https://doi.org/10.1116/1.2163879

Abstract

View articletitled, Near-surface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Si

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Noncontact sheet resistance and leakage current mapping for ultra-shallow junctions

V. N. Faifer; M. I. Current; T. M. H. Wong; V. V. Souchkov

J. Vac. Sci. Technol. B 24, 414–420 (2006) https://doi.org/10.1116/1.2137334

Abstract

View articletitled, Noncontact sheet resistance and leakage current mapping for ultra-shallow junctions

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Characterization of ultralow-energy implants and towards the analysis of three-dimensional dopant distributions using three-dimensional atom-probe tomography

Keith Thompson; J. H. Bunton; Thomas F. Kelly; David J. Larson

J. Vac. Sci. Technol. B 24, 421–427 (2006) https://doi.org/10.1116/1.2141621

Abstract

View articletitled, Characterization of ultralow-energy implants and towards the analysis of three-dimensional dopant distributions using three-dimensional atom-probe tomography

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Ultrashallow profiling using secondary ion mass spectrometry: Estimating junction depth error using mathematical deconvolution

Ming Hong Yang; Gary Mount; Ian Mowat

J. Vac. Sci. Technol. B 24, 428–432 (2006) https://doi.org/10.1116/1.2132319

Abstract

View articletitled, Ultrashallow profiling using secondary ion mass spectrometry: Estimating junction depth error using mathematical deconvolution

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Dopant-Defect Interactions

Fluorine incorporation in preamorphized silicon

G. Impellizzeri; S. Mirabella; E. Bruno; F. Priolo; E. Napolitani; A. Carnera

J. Vac. Sci. Technol. B 24, 433–436 (2006) https://doi.org/10.1116/1.2127934

Abstract

View articletitled, Fluorine incorporation in preamorphized silicon

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Effect of fluorine on the activation and diffusion behavior of boron implanted preamorphized silicon

S. Paul; W. Lerch; B. Colombeau; N. E. B. Cowern; F. Cristiano; S. Boninelli; D. Bolze

J. Vac. Sci. Technol. B 24, 437–441 (2006) https://doi.org/10.1116/1.2127935

Abstract

View articletitled, Effect of fluorine on the activation and diffusion behavior of boron implanted preamorphized silicon

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Effect of buried $Si ∕ {SiO}_{2}$ interface on dopant and defect evolution in preamorphizing implant ultrashallow junction

J. J. Hamilton; B. Colombeau; J. A. Sharp; N. E. B. Cowern; K. J. Kirkby; E. J. H. Collart; M. Bersani; D. Giubertoni

J. Vac. Sci. Technol. B 24, 442–445 (2006) https://doi.org/10.1116/1.2140004

Abstract

View articletitled, Effect of buried <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Si</mi><mo>∕</mo><msub><mi>SiO</mi><mn>2</mn></msub></mrow></math> interface on dopant and defect evolution in preamorphizing implant ultrashallow junction

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Effect of stress on the evolution of mask-edge defects in ion-implanted silicon

C. R. Olson; E. Kuryliw; B. E. Jones; K. S. Jones

J. Vac. Sci. Technol. B 24, 446–449 (2006) https://doi.org/10.1116/1.2162566

Abstract

View articletitled, Effect of stress on the evolution of mask-edge defects in ion-implanted silicon

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Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals

R. A. Camillo-Castillo; M. E. Law; K. S. Jones; R. Lindsay; K. Maex; B. J. Pawlak; S. McCoy

J. Vac. Sci. Technol. B 24, 450–455 (2006) https://doi.org/10.1116/1.2140003

Abstract

View articletitled, Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals

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Modeling Dopants and Defects

Calculations of effect of anisotropic stress/strain on dopant diffusion in silicon under equilibrium and nonequilibrium conditions

Scott T. Dunham; Milan Diebel; Chihak Ahn; Chen Luen Shih

J. Vac. Sci. Technol. B 24, 456–461 (2006) https://doi.org/10.1116/1.2151908

Abstract

View articletitled, Calculations of effect of anisotropic stress/strain on dopant diffusion in silicon under equilibrium and nonequilibrium conditions

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Application of molecular dynamics for low-energy ion implantation in crystalline silicon

H. Y. Chan; M. P. Srinivasan; N. J. Montgomery; C. P. A. Mulcahy; S. Biswas; H.-J. L. Gossmann; M. Harris; K. Nordlund; F. Benistant; C. M. Ng; D Gui; L. Chan

J. Vac. Sci. Technol. B 24, 462–467 (2006) https://doi.org/10.1116/1.2137333

Abstract

View articletitled, Application of molecular dynamics for low-energy ion implantation in crystalline silicon

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Size effects on the electrical activation of low-energy implanted B in Si

F. Giannazzo; V. Raineri; E. Bruno; S. Mirabella; G. Impellizzeri; F. Priolo; E. Napolitani

J. Vac. Sci. Technol. B 24, 468–472 (2006) https://doi.org/10.1116/1.2073367

Abstract

View articletitled, Size effects on the electrical activation of low-energy implanted B in Si

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Nonconventional flash annealing on shallow indium implants in silicon

S. Gennaro; D. Giubertoni; M. Bersani; J. Foggiato; W. S. Yoo; R. Gwilliam

J. Vac. Sci. Technol. B 24, 473–477 (2006) https://doi.org/10.1116/1.2132321

Abstract

View articletitled, Nonconventional flash annealing on shallow indium implants in silicon

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Modeling of B diffusion in the presence of Ge

Ljubo Radic; Antonio F. Saavedra; Kevin S. Jones; Mark E. Law

J. Vac. Sci. Technol. B 24, 478–481 (2006) https://doi.org/10.1116/1.2151905

Abstract

View articletitled, Modeling of B diffusion in the presence of Ge

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Ultra-shallow Junction Fabrication Technologies

Development of plasma-based implant for silicon devices

Steve Walther; Reuel Liebert

J. Vac. Sci. Technol. B 24, 482–488 (2006) https://doi.org/10.1116/1.2101598

Abstract

View articletitled, Development of plasma-based implant for silicon devices

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Plasma implanted ultra shallow junction boron depth profiles: Effect of plasma chemistry and sheath conditions

Steve Walther; Ludovic Godet; Temel Büyüklimanli; John Weeman

J. Vac. Sci. Technol. B 24, 489–493 (2006) https://doi.org/10.1116/1.2137336

Abstract

View articletitled, Plasma implanted ultra shallow junction boron depth profiles: Effect of plasma chemistry and sheath conditions

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P implantation doping of Ge: Diffusion, activation, and recrystallization

A. Satta; T. Janssens; T. Clarysse; E. Simoen; M. Meuris; A. Benedetti; I. Hoflijk; B. De Jaeger; C. Demeurisse; W. Vandervorst

J. Vac. Sci. Technol. B 24, 494–498 (2006) https://doi.org/10.1116/1.2162565

Abstract

View articletitled, P implantation doping of Ge: Diffusion, activation, and recrystallization

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Dopant loss of ultrashallow junction by wet chemical cleaning

G. H. Buh; T. Park; G. H. Yon; S. B. Kim; Y. J. Jee; S. J. Hong; C. Ryoo; J. R. Yoo; J. W. Lee; C. S. Jun; Y. G. Shin; U-In Chung; J. T. Moon

J. Vac. Sci. Technol. B 24, 499–502 (2006) https://doi.org/10.1116/1.2132323

Abstract

View articletitled, Dopant loss of ultrashallow junction by wet chemical cleaning

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Quantitative analysis of ultrashallow junction of sub- $50 nm$ gate-length transistors: Junction depth, sheet resistance, short channel effects, and transistor performance

G. H. Buh; T. Park; G. H. Yon; S. J. Hong; C. W. Ryoo; J. R. Yoo; J. W. Lee; Y. J. Jee; J. S. Lee; C. S. Jun; Y. G. Shin; U-ln Chung; J. T. Moon

J. Vac. Sci. Technol. B 24, 503–506 (2006) https://doi.org/10.1116/1.2132320

Abstract

View articletitled, Quantitative analysis of ultrashallow junction of sub-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>50</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> gate-length transistors: Junction depth, sheet resistance, short channel effects, and transistor performance

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Co-implantation with conventional spike anneal solutions for $45 nm$ $n$ -type metal-oxide-semiconductor ultra-shallow junction formation

E. J. H. Collart; S. B. Felch; B. J. Pawlak; P. P. Absil; S. Severi; T. Janssens; W. Vandervorst

J. Vac. Sci. Technol. B 24, 507–509 (2006) https://doi.org/10.1116/1.2151906

Abstract

View articletitled, Co-implantation with conventional spike anneal solutions for <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>45</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type metal-oxide-semiconductor ultra-shallow junction formation

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Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge

T. Janssens; C. Huyghebaert; D. Vanhaeren; G. Winderickx; A. Satta; M. Meuris; W. Vandervorst

J. Vac. Sci. Technol. B 24, 510–514 (2006) https://doi.org/10.1116/1.2151904

Abstract

View articletitled, Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge

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Implementation of flash technology for ultra shallow junction formation: Challenges in process integration

J. Foggiato; W. S. Yoo

J. Vac. Sci. Technol. B 24, 515–520 (2006) https://doi.org/10.1116/1.2151903

Abstract

View articletitled, Implementation of flash technology for ultra shallow junction formation: Challenges in process integration

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Letters

Nanoscopy of near-field distribution on plasmonic nanostructures

Xiangang Luo; Yueguang Lv; Chunlei Du; Junxian Ma; Hao Wang; Haiying Li; Gairong Yang; Xiangdi Lin; Hanmin Yao

J. Vac. Sci. Technol. B 24, L1–L5 (2006) https://doi.org/10.1116/1.2140002

Abstract

View articletitled, Nanoscopy of near-field distribution on plasmonic nanostructures

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${Cl}_{2} ∕ O_{2}$ -inductively coupled plasma etching of deep hole-type photonic crystals in InP

C. F. Carlström; R. van der Heijden; F. Karouta; R. W. van der Heijden; H. W. M. Salemink; E. van der Drift

J. Vac. Sci. Technol. B 24, L6–L9 (2006) https://doi.org/10.1116/1.2151915

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Cl</mi><mn>2</mn></msub><mo>∕</mo><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math>-inductively coupled plasma etching of deep hole-type photonic crystals in InP

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Brief Reports and Comments

PAPERS FROM THE EIGHTH INTERNATIONAL WORKSHOP ON THE FABRICATION, CHARACTERIZATION, AND MODELING OF ULTRA-SHALLOW DOPING PROFILES IN SEMICONDUCTORS

Characterization of Ultra-Shallow Junctions

Dopant-Defect Interactions

Modeling Dopants and Defects

Ultra-shallow Junction Fabrication Technologies

Letters

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