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Thermal-induced formation of silver nanowires on titanium dioxide thin films

Ta-Kun Chen; Wen-Tai Chen; Min-Chi Yang; Ming-Show Wong

J. Vac. Sci. Technol. B 23, 2261–2265 (2005) https://doi.org/10.1116/1.2083927

Abstract

View articletitled, Thermal-induced formation of silver nanowires on titanium dioxide thin films

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Magnetoplasmons in a pair of armchair carbon nanotubes

C. H. Lee; C. W. Chiu; F. L. Shyu; M. F. Lin

J. Vac. Sci. Technol. B 23, 2266–2271 (2005) https://doi.org/10.1116/1.2083928

Abstract

View articletitled, Magnetoplasmons in a pair of armchair carbon nanotubes

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Co-gas impact of $B_{2} H_{6}$ plasma diluted with helium on the plasma doping process in a pulsed glow-discharge system

Shu Qin; Allen McTeer; Y. Jeff Hu

J. Vac. Sci. Technol. B 23, 2272–2277 (2005) https://doi.org/10.1116/1.2083929

Abstract

View articletitled, Co-gas impact of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">B</mi><mn>2</mn></msub><msub><mi mathvariant="normal">H</mi><mn>6</mn></msub></mrow></math> plasma diluted with helium on the plasma doping process in a pulsed glow-discharge system

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Self-assembled tungsten nanocrystals in high- $k$ dielectric for nonvolatile memory application

S. K. Samanta; Zerlinda Y. L. Tan; Won Jong Yoo; Ganesh Samudra; Sungjoo Lee; L. K. Bera; N. Balasubramanian

J. Vac. Sci. Technol. B 23, 2278–2283 (2005) https://doi.org/10.1116/1.2083930

Abstract

View articletitled, Self-assembled tungsten nanocrystals in high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> dielectric for nonvolatile memory application

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Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer

Ho Won Jang; Jong-Lam Lee

J. Vac. Sci. Technol. B 23, 2284–2287 (2005) https://doi.org/10.1116/1.2083931

Abstract

View articletitled, Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer

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Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates

A. Pan; Y. L. Wang; C. S. Wu; C. D. Chen; N. W. Liu

J. Vac. Sci. Technol. B 23, 2288–2291 (2005) https://doi.org/10.1116/1.2101599

Abstract

View articletitled, Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates

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Selective growth of vertical ZnO nanowires on $Zn O : Ga ∕ {Si}_{3} N_{4} ∕ Si O_{2} ∕ Si$ templates

Cheng-Liang Hsu; Shoou-Jinn Chang; Hui-Chuan Hung; Yan-Ru Lin; Tsung-Heng Lu; Yung-Kuan Tseng; I-Cherng Chen

J. Vac. Sci. Technol. B 23, 2292–2296 (2005) https://doi.org/10.1116/1.2101600

Abstract

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Tip characterization and surface reconstruction of complex structures with critical dimension atomic force microscopy

G. Dahlen; M. Osborn; N. Okulan; W. Foreman; A. Chand; J. Foucher

J. Vac. Sci. Technol. B 23, 2297–2303 (2005) https://doi.org/10.1116/1.2101601

Abstract

View articletitled, Tip characterization and surface reconstruction of complex structures with critical dimension atomic force microscopy

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Effect of a thin W interlayer on the thermal stability and electrical characteristics of NiSi film

Wei Huang; Li-Chun Zhang; Yu-Zhi Gao; Han-Yan Jin; Bao-Jun Ning; Guang-Qin Zhang

J. Vac. Sci. Technol. B 23, 2304–2308 (2005) https://doi.org/10.1116/1.2101647

Abstract

View articletitled, Effect of a thin W interlayer on the thermal stability and electrical characteristics of NiSi film

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Spatially selective immobilization of ferritin using solid–solution interfacial interactions

Edward Manning; Siu-Tung Yau

J. Vac. Sci. Technol. B 23, 2309–2313 (2005) https://doi.org/10.1116/1.2101677

Abstract

View articletitled, Spatially selective immobilization of ferritin using solid–solution interfacial interactions

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Study of the buffer-layer and annealing-temperature impact on fabrication of polycrystalline ${Fe}_{3} O_{4}$ film for the application of spintronic devices

Xiao-Li Tang; Huai-Wu Zhang; Hua Su; Zhi-Yong Zhong

J. Vac. Sci. Technol. B 23, 2314–2318 (2005) https://doi.org/10.1116/1.2101635

Abstract

View articletitled, Study of the buffer-layer and annealing-temperature impact on fabrication of polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Fe</mi><mn>3</mn></msub><msub><mi mathvariant="normal">O</mi><mn>4</mn></msub></mrow></math> film for the application of spintronic devices

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Maximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect

Junghoon Yeom; Yan Wu; John C. Selby; Mark A. Shannon

J. Vac. Sci. Technol. B 23, 2319–2329 (2005) https://doi.org/10.1116/1.2101678

Abstract

View articletitled, Maximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect

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Ohmic contact formation mechanism of $Ta ∕ Al ∕ Mo ∕ Au$ and $Ti ∕ Al ∕ Mo ∕ Au$ metallizations on $AlGaN ∕ GaN$ HEMTs

Fitih M. Mohammed; Liang Wang; Deepak Selvanathan; Hubert Hu; Ilesanmi Adesida

J. Vac. Sci. Technol. B 23, 2330–2335 (2005) https://doi.org/10.1116/1.2101691

Abstract

View articletitled, Ohmic contact formation mechanism of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Ta</mi><mo>∕</mo><mi>Al</mi><mo>∕</mo><mi>Mo</mi><mo>∕</mo><mi>Au</mi></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Ti</mi><mo>∕</mo><mi>Al</mi><mo>∕</mo><mi>Mo</mi><mo>∕</mo><mi>Au</mi></mrow></math> metallizations on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>AlGaN</mi><mo>∕</mo><mi>GaN</mi></mrow></math> HEMTs

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Operation of nanocrystalline silicon ballistic emitter in low vacuum and atmospheric pressures

Toshiyuki Ohta; Akira Kojima; Hiroyuki Hirakawa; Tadashi Iwamatsu; Nobuyoshi Koshida

J. Vac. Sci. Technol. B 23, 2336–2339 (2005) https://doi.org/10.1116/1.2102928

Abstract

View articletitled, Operation of nanocrystalline silicon ballistic emitter in low vacuum and atmospheric pressures

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Pattern-dependent microloading and step coverage of silicon nitride thin films deposited in a single-wafer thermal chemical vapor deposition chamber

Jacob W. Smith; Sean M. Seutter; R. Suryanaryanan Iyer

J. Vac. Sci. Technol. B 23, 2340–2346 (2005) https://doi.org/10.1116/1.2102947

Abstract

View articletitled, Pattern-dependent microloading and step coverage of silicon nitride thin films deposited in a single-wafer thermal chemical vapor deposition chamber

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Physical characterization of ZnO nanorods grown on Si from aqueous solution and annealed at various atmospheres

Chih-Cheng Yang; San-Yuan Chen; Hsin-Yi Lee

J. Vac. Sci. Technol. B 23, 2347–2350 (2005) https://doi.org/10.1116/1.2102967

Abstract

View articletitled, Physical characterization of ZnO nanorods grown on Si from aqueous solution and annealed at various atmospheres

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Observations of interfaces in direct wafer-bonded InP–GaAs structures

Yan-feng Lao; Hui-zhen Wu; Ming Li

J. Vac. Sci. Technol. B 23, 2351–2356 (2005) https://doi.org/10.1116/1.2102968

Abstract

View articletitled, Observations of interfaces in direct wafer-bonded InP–GaAs structures

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Passivation effects on the stability of pentacene thin-film transistors with ${SnO}_{2}$ prepared by ion-beam-assisted deposition

Woo Jin Kim; Won Hoe Koo; Sung Jin Jo; Chang Su Kim; Hong Koo Baik; Jiyoul Lee; Seongil Im

J. Vac. Sci. Technol. B 23, 2357–2362 (2005) https://doi.org/10.1116/1.2102969

Abstract

View articletitled, Passivation effects on the stability of pentacene thin-film transistors with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SnO</mi><mn>2</mn></msub></mrow></math> prepared by ion-beam-assisted deposition

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Field emission of carbon nanotubes grown on carbon cloth

S. H. Jo; J. Y. Huang; S. Chen; G. Y. Xiong; D. Z. Wang; Z. F. Ren

J. Vac. Sci. Technol. B 23, 2363–2368 (2005) https://doi.org/10.1116/1.2102970

Abstract

View articletitled, Field emission of carbon nanotubes grown on carbon cloth

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Effects of bonding materials in screen-printing paste on the field-emission properties of carbon nanotube cathodes

Heo-Young Shin; Won-Sub Chung; Kwang Ho Kim; Young-Rae Cho; Byoung-Chul Shin

J. Vac. Sci. Technol. B 23, 2369–2372 (2005) https://doi.org/10.1116/1.2110342

Abstract

View articletitled, Effects of bonding materials in screen-printing paste on the field-emission properties of carbon nanotube cathodes

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Characterization of bulk GaN rectifiers for hydrogen gas sensing

Lars Voss; B. P. Gila; S. J. Pearton; Hung-Ta Wang; F. Ren

J. Vac. Sci. Technol. B 23, 2373–2377 (2005) https://doi.org/10.1116/1.2110343

Abstract

View articletitled, Characterization of bulk GaN rectifiers for hydrogen gas sensing

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Iridium/silicon capping layer for soft x-ray and extreme ultraviolet mirrors

Shon T. Prisbrey; Stephen P. Vernon; W. Miles Clift

J. Vac. Sci. Technol. B 23, 2378–2383 (2005) https://doi.org/10.1116/1.2122727

Abstract

View articletitled, Iridium/silicon capping layer for soft x-ray and extreme ultraviolet mirrors

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Temperature characteristics of stress-induced migration based on atom migration

Minoru Aoyagi

J. Vac. Sci. Technol. B 23, 2384–2389 (2005) https://doi.org/10.1116/1.2123447

Abstract

View articletitled, Temperature characteristics of stress-induced migration based on atom migration

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Magnetoresistance of patterned NiFe thin films with structures modified by atomic force microscope nanolithography

Genta Watanabe; Sinichi Koizumi; Tsutomu Yamada; Yasushi Takemura; Jun-ichi Shirakashi

J. Vac. Sci. Technol. B 23, 2390–2393 (2005) https://doi.org/10.1116/1.2122767

Abstract

View articletitled, Magnetoresistance of patterned NiFe thin films with structures modified by atomic force microscope nanolithography

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Fabrication and characterization of CuO nanorods by a submerged arc nanoparticle synthesis system

Chih-Hung Lo; Tsing-Tshih Tsung; Liang-Chia Chen

J. Vac. Sci. Technol. B 23, 2394–2397 (2005) https://doi.org/10.1116/1.2122787

Abstract

View articletitled, Fabrication and characterization of CuO nanorods by a submerged arc nanoparticle synthesis system

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Preparation and characterization of titania nanotubes and hybrid materials derived from them

Yi-Jun Lin; Leeyih Wang; Wen-Yen Chiu

J. Vac. Sci. Technol. B 23, 2398–2402 (2005) https://doi.org/10.1116/1.2122827

Abstract

View articletitled, Preparation and characterization of titania nanotubes and hybrid materials derived from them

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Nanoscale electron stimulated chemical vapor deposition of Au in an environmental transmission electron microscope

Sutharsan Ketharanathan; Renu Sharma; Jeff Drucker

J. Vac. Sci. Technol. B 23, 2403–2408 (2005) https://doi.org/10.1116/1.2122847

Abstract

View articletitled, Nanoscale electron stimulated chemical vapor deposition of Au in an environmental transmission electron microscope

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Bubbles in immersion lithography

M. Switkes; M. Rothschild; T. A. Shedd; H. B. Burnett; M. S. Yeung

J. Vac. Sci. Technol. B 23, 2409–2412 (2005) https://doi.org/10.1116/1.2122747

Abstract

View articletitled, Bubbles in immersion lithography

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Photosensitive quantum dot composites and their applications in optical structures

Lin Pang; Kevin Tetz; Yaoming Shen; Chyong-Hua Chen; Yeshaiahu Fainman

J. Vac. Sci. Technol. B 23, 2413–2418 (2005) https://doi.org/10.1116/1.2122867

Abstract

View articletitled, Photosensitive quantum dot composites and their applications in optical structures

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Modeling of protection schemes for critical surfaces under low pressure conditions: Comparison between analytical and numerical approach

Christof Asbach; David Y. H. Pui; Jung Hyeun Kim; Se-Jin Yook; Heinz Fissan

J. Vac. Sci. Technol. B 23, 2419–2426 (2005) https://doi.org/10.1116/1.2122927

Abstract

View articletitled, Modeling of protection schemes for critical surfaces under low pressure conditions: Comparison between analytical and numerical approach

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Numeric analysis of the role of liquid phase ultraviolet photochemistry in $193 nm$ immersion lithography

William Hinsberg; Frances Houle

J. Vac. Sci. Technol. B 23, 2427–2435 (2005) https://doi.org/10.1116/1.2126671

Abstract

View articletitled, Numeric analysis of the role of liquid phase ultraviolet photochemistry in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>193</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> immersion lithography

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Barrier height enhancement and stability of the $Au ∕ n - In P$ Schottky barrier diodes oxidized by absorbed water vapor

H. Çetin; E. Ayyildiz; A. Türüt

J. Vac. Sci. Technol. B 23, 2436–2443 (2005) https://doi.org/10.1116/1.2126675

Abstract

View articletitled, Barrier height enhancement and stability of the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Au</mi><mo>∕</mo><mi>n</mi><mtext>-</mtext><mi mathvariant="normal">In</mi><mi mathvariant="normal">P</mi></mrow></math> Schottky barrier diodes oxidized by absorbed water vapor

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Formation of Ti–Si–N film using low frequency, high density inductively coupled plasma process

Y. C. Ee; Z. Chen; L. Chan; K. H. See; S. B. Law; S. Xu; Z. L. Tsakadze; P. P. Rutkevych; K. Y. Zeng; L. Shen

J. Vac. Sci. Technol. B 23, 2444–2448 (2005) https://doi.org/10.1116/1.2131080

Abstract

View articletitled, Formation of Ti–Si–N film using low frequency, high density inductively coupled plasma process

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High-efficiency light-emitting device based on silicon nanostructures and tunneling carrier injection

Hei Wong; V. Filip; P. L. Chu

J. Vac. Sci. Technol. B 23, 2449–2456 (2005) https://doi.org/10.1116/1.2131082

Abstract

View articletitled, High-efficiency light-emitting device based on silicon nanostructures and tunneling carrier injection

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Diamond nanorods

O. A. Shenderova; C. W. Padgett; Z. Hu; D. W. Brenner

J. Vac. Sci. Technol. B 23, 2457–2464 (2005) https://doi.org/10.1116/1.2122907

Abstract

View articletitled, Diamond nanorods

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Various driving modes of a field emission cathode

Y. S. Choi

J. Vac. Sci. Technol. B 23, 2465–2470 (2005) https://doi.org/10.1116/1.2126673

Abstract

View articletitled, Various driving modes of a field emission cathode

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Nanoscale fabrication in aqueous KOH solution using tribo-nanolithography

Noritaka Kawasegi; Jeong Woo Park; Noboru Morita; Shigeru Yamada; Noboru Takano; Tatsuo Oyama; Kiwamu Ashida

J. Vac. Sci. Technol. B 23, 2471–2475 (2005) https://doi.org/10.1116/1.2126674

Abstract

View articletitled, Nanoscale fabrication in aqueous KOH solution using tribo-nanolithography

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Wing-tilt-free gallium nitride laterally grown on maskless chemical-etched sapphire-patterned substrate

Jing Wang; L. W. Guo; H. Q. Jia; Z. G. Xing; Y. Wang; H. Chen; J. M. Zhou

J. Vac. Sci. Technol. B 23, 2476–2479 (2005) https://doi.org/10.1116/1.2122807

Abstract

View articletitled, Wing-tilt-free gallium nitride laterally grown on maskless chemical-etched sapphire-patterned substrate

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Lanthanum aluminate by atomic layer deposition and molecular beam epitaxy

D. H. Triyoso; H. Li; R. I. Hegde; Z. Yu; K. Moore; J. Grant; B. E. White, Jr.; P. J. Tobin

J. Vac. Sci. Technol. B 23, 2480–2485 (2005) https://doi.org/10.1116/1.2131077

Abstract

View articletitled, Lanthanum aluminate by atomic layer deposition and molecular beam epitaxy

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Structural, electrical, and mechanical properties of $nc - Ti C ∕ a - Si C$ nanocomposite thin films

P. Eklund; J. Emmerlich; H. Högberg; O. Wilhelmsson; P. Isberg; J. Birch; P. O. Å. Persson; U. Jansson; L. Hultman

J. Vac. Sci. Technol. B 23, 2486–2495 (2005) https://doi.org/10.1116/1.2131081

Abstract

View articletitled, Structural, electrical, and mechanical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="italic">nc</mi><mtext>-</mtext><mi mathvariant="normal">Ti</mi><mi mathvariant="normal">C</mi><mo>∕</mo><mi>a</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi><mi mathvariant="normal">C</mi></mrow></math> nanocomposite thin films

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Ultra small self-organized nitride nanotips

L. W. Ji; T. H. Fang; S. C. Hung; Y. K. Su; S. J. Chang; R. W. Chuang

J. Vac. Sci. Technol. B 23, 2496–2498 (2005) https://doi.org/10.1116/1.2131083

Abstract

View articletitled, Ultra small self-organized nitride nanotips

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Reactive-ion etching of high- $Q$ and submicron-diameter $Ga As ∕ Al As$ micropillar cavities

S. Varoutsis; S. Laurent; I. Sagnes; A. Lemaître; L. Ferlazzo; C. Mériadec; G. Patriarche; I. Robert-Philip; I. Abram

J. Vac. Sci. Technol. B 23, 2499–2503 (2005) https://doi.org/10.1116/1.2131084

Abstract

View articletitled, Reactive-ion etching of high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">Q</mi></math> and submicron-diameter <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Al</mi><mi mathvariant="normal">As</mi></mrow></math> micropillar cavities

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Design and simulation of ZnO-based light-emitting diode structures

Sang Youn Han; Hyucksoo Yang; D. P. Norton; S. J. Pearton; F. Ren; A. Osinsky; J. W. Dong; B. Hertog; P. P. Chow

J. Vac. Sci. Technol. B 23, 2504–2509 (2005) https://doi.org/10.1116/1.2131869

Abstract

View articletitled, Design and simulation of ZnO-based light-emitting diode structures

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Electrical transport of tetragonal boron nanobelts

K. Kirihara; Z. Wang; K. Kawaguchi; Y. Shimizu; T. Sasaki; N. Koshizaki; H. Hyodo; K. Soga; K. Kimura

J. Vac. Sci. Technol. B 23, 2510–2513 (2005) https://doi.org/10.1116/1.2131870

Abstract

View articletitled, Electrical transport of tetragonal boron nanobelts

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Effects of doping type and concentration on precipitation of nanometer arsenic clusters in low-temperature-grown GaAs

W. N. Lee; Y. F. Chen; J. H. Huang; X. J. Guo; C. T. Kuo

J. Vac. Sci. Technol. B 23, 2514–2517 (2005) https://doi.org/10.1116/1.2131872

Abstract

View articletitled, Effects of doping type and concentration on precipitation of nanometer arsenic clusters in low-temperature-grown GaAs

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Acidic acrylic polymers for nanoimprint lithography on flexible substrates

Wen-chang Liao; Steve Lien-Chung Hsu

J. Vac. Sci. Technol. B 23, 2518–2521 (2005) https://doi.org/10.1116/1.2131874

Abstract

View articletitled, Acidic acrylic polymers for nanoimprint lithography on flexible substrates

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Ultrathin pore-seal film by plasma enhanced chemical vapor deposition SiCH from tetramethylsilane

Akira Furuya; Katsumi Yoneda; Eiichi Soda; Toru Yoshie; Hiroshi Okamura; Miyoko Shimada; Nobuyuki Ohtsuka; Shinichi Ogawa

J. Vac. Sci. Technol. B 23, 2522–2525 (2005) https://doi.org/10.1116/1.2132324

Abstract

View articletitled, Ultrathin pore-seal film by plasma enhanced chemical vapor deposition SiCH from tetramethylsilane

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Pulse oscillation of self-organized ${In}_{0.53} {Ga}_{0.47} As$ quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy

H. Hino; A. Shigenobu; K. Ohmori; T. Kitada; S. Shimomura; S. Hiyamizu

J. Vac. Sci. Technol. B 23, 2526–2529 (2005) https://doi.org/10.1116/1.2126670

Abstract

View articletitled, Pulse oscillation of self-organized <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">In</mi><mn>0.53</mn></msub><msub><mi mathvariant="normal">Ga</mi><mn>0.47</mn></msub><mi mathvariant="normal">As</mi></mrow></math> quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy

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Interfacial reactions in nickel/titanium ohmic contacts to $n$ -type silicon carbide

Jae Hyun Park; Paul H. Holloway

J. Vac. Sci. Technol. B 23, 2530–2537 (2005) https://doi.org/10.1116/1.2126677

Abstract

View articletitled, Interfacial reactions in nickel/titanium ohmic contacts to <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type silicon carbide

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Investigation of surface treatment schemes on n-type GaN and ${Al}_{0.20} {Ga}_{0.80} N$

Deepak Selvanathan; Fitih M. Mohammed; Jeong-Oun Bae; Ilesanmi Adesida; Katherine H. A. Bogart

J. Vac. Sci. Technol. B 23, 2538–2544 (2005) https://doi.org/10.1116/1.2131078

Abstract

View articletitled, Investigation of surface treatment schemes on n-type GaN and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Al</mi><mn>0.20</mn></msub><msub><mi mathvariant="normal">Ga</mi><mn>0.80</mn></msub><mi mathvariant="normal">N</mi></mrow></math>

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Thickness and density evaluation for nanostructured thin films by glancing angle deposition

Cristina Buzea; Kate Kaminska; Gisia Beydaghyan; Tim Brown; Chelsea Elliott; Cory Dean; Kevin Robbie

J. Vac. Sci. Technol. B 23, 2545–2552 (2005) https://doi.org/10.1116/1.2131079

Abstract

View articletitled, Thickness and density evaluation for nanostructured thin films by glancing angle deposition

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Effects of etch barrier densification on step and flash imprint lithography

S. Johnson; R. Burns; E. K. Kim; M. Dickey; G. Schmid; J. Meiring; S. Burns; C. G. Willson; D. Convey; Y. Wei; P. Fejes; K. Gehoski; D. Mancini; K. Nordquist; W. J. Dauksher; D. J. Resnick

J. Vac. Sci. Technol. B 23, 2553–2556 (2005) https://doi.org/10.1116/1.2102971

Abstract

View articletitled, Effects of etch barrier densification on step and flash imprint lithography

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Phase transformations in copper oxide nanowires

Sheng Han; Hong-Ying Chen; Yuh-Bin Chu; Han C. Shih

J. Vac. Sci. Technol. B 23, 2557–2560 (2005) https://doi.org/10.1116/1.2126672

Abstract

View articletitled, Phase transformations in copper oxide nanowires

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Brief Reports and Comments

Material and electrical analysis of hafnium titania bilayer dielectric metal-oxide-semiconductor field-effect transistors

Se Jong Rhee; Chang Yong Kang; Chang Hwan Choi; Manhong Zhang; Jack C. Lee

J. Vac. Sci. Technol. B 23, 2561–2563 (2005) https://doi.org/10.1116/1.2126676

Abstract

View articletitled, Material and electrical analysis of hafnium titania bilayer dielectric metal-oxide-semiconductor field-effect transistors

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Shop Notes

Electrochemical fabrication of cobalt and nickel tips for scanning tunneling microscopy

Cristiano Albonetti; Massimiliano Cavallini; Massimiliano Massi; Jean François Moulin; Fabio Biscarini

J. Vac. Sci. Technol. B 23, 2564–2566 (2005) https://doi.org/10.1116/1.2131873

Abstract

View articletitled, Electrochemical fabrication of cobalt and nickel tips for scanning tunneling microscopy

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Papers from the 49th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication

Plenary Talks

Modeling and simulation for nanometrics

Andrew R. Neureuther; Daniel Ceperley

J. Vac. Sci. Technol. B 23, 2578–2583 (2005) https://doi.org/10.1116/1.2062447

Abstract

View articletitled, Modeling and simulation for nanometrics

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History of extreme ultraviolet lithography

Hiroo Kinoshita

J. Vac. Sci. Technol. B 23, 2584–2588 (2005) https://doi.org/10.1116/1.2127950

Abstract

View articletitled, History of extreme ultraviolet lithography

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Modeling and Simulation

Electron-electron interaction induced beam displacement in a multiple electron beam system

Ming L. Yu; Steven T. Coyle; William DeVore; Bassam Shamoun

J. Vac. Sci. Technol. B 23, 2589–2595 (2005) https://doi.org/10.1116/1.2101788

Abstract

View articletitled, Electron-electron interaction induced beam displacement in a multiple electron beam system

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Full wafer simulation of immersion fluid heating

M. El-Morsi; G. Nellis; S. Schuetter; C. Van Peski; A. Grenville

J. Vac. Sci. Technol. B 23, 2596–2600 (2005) https://doi.org/10.1116/1.2091091

Abstract

View articletitled, Full wafer simulation of immersion fluid heating

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Charting the future (and remembering the past) of optical lithography simulation

Chris A. Mack

J. Vac. Sci. Technol. B 23, 2601–2606 (2005) https://doi.org/10.1116/1.2130354

Abstract

View articletitled, Charting the future (and remembering the past) of optical lithography simulation

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Optical Lithography

Dynamic alignment control for fluid-immersion lithographies using interferometric-spatial-phase imaging

Euclid E. Moon; Mark K. Mondol; Patrick N. Everett; Henry I. Smith

J. Vac. Sci. Technol. B 23, 2607–2610 (2005) https://doi.org/10.1116/1.2101725

Abstract

View articletitled, Dynamic alignment control for fluid-immersion lithographies using interferometric-spatial-phase imaging

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Control of the receding meniscus in immersion lithography

H. Burnett; T. Shedd; G. Nellis; M. El-Morsi; R. Engelstad; S. Garoff; K. Varanasi

J. Vac. Sci. Technol. B 23, 2611–2616 (2005) https://doi.org/10.1116/1.2090968

Abstract

View articletitled, Control of the receding meniscus in immersion lithography

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Direct patterning of spin-on glass with $157 nm$ lithography: Application to nanoscale crystal growth

T. M. Bloomstein; P. W. Juodawlkis; R. B. Swint; S. G. Cann; S. J. Deneault; N. N. Efremow, Jr.; D. E. Hardy; M. F. Marchant; A. Napoleone; D. C. Oakley; M. Rothschild

J. Vac. Sci. Technol. B 23, 2617–2623 (2005) https://doi.org/10.1116/1.2101692

Abstract

View articletitled, Direct patterning of spin-on glass with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>157</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> lithography: Application to nanoscale crystal growth

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Hybrid exposure strategy: Combining e-beam direct writing with optical lithography for magnetic recording heads

XiaoMin Yang

J. Vac. Sci. Technol. B 23, 2624–2630 (2005) https://doi.org/10.1116/1.2110340

Abstract

View articletitled, Hybrid exposure strategy: Combining e-beam direct writing with optical lithography for magnetic recording heads

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Use of optical defocus components to investigate and improve pattern spatial frequency characteristics for more robust layouts

Lawrence S. Melvin, III; James P. Shiely; Qiliang Yan

J. Vac. Sci. Technol. B 23, 2631–2635 (2005) https://doi.org/10.1116/1.2062687

Abstract

View articletitled, Use of optical defocus components to investigate and improve pattern spatial frequency characteristics for more robust layouts

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Deep subwavelength nanolithography using localized surface plasmon modes on planar silver mask

W. Srituravanich; S. Durant; H. Lee; C. Sun; X. Zhang

J. Vac. Sci. Technol. B 23, 2636–2639 (2005) https://doi.org/10.1116/1.2091088

Abstract

View articletitled, Deep subwavelength nanolithography using localized surface plasmon modes on planar silver mask

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Doppler writing and linewidth control for scanning beam interference lithography

Juan C. Montoya; Chih-Hao Chang; Ralf K. Heilmann; Mark L. Schattenburg

J. Vac. Sci. Technol. B 23, 2640–2645 (2005) https://doi.org/10.1116/1.2127938

Abstract

View articletitled, Doppler writing and linewidth control for scanning beam interference lithography

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Screening layouts for high-numerical aperture and polarization effects using pattern matching

Gregory R. McIntyre; Juliet Holwill; Andrew Neureuther; Luigi Capodieci; Yi Zou; Harry Levinson; Jongwook Kye

J. Vac. Sci. Technol. B 23, 2646–2652 (2005) https://doi.org/10.1116/1.2132333

Abstract

View articletitled, Screening layouts for high-numerical aperture and polarization effects using pattern matching

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Understanding the impact of source displacement error on sub- $90 nm$ patterns using a fresnel zone plate

Jangho Shin; Chan Hwang; SukJoo Lee; Sang-Gyun Woo; Han-Ku Cho; Joo-Tae Moon

J. Vac. Sci. Technol. B 23, 2653–2656 (2005) https://doi.org/10.1116/1.2121733

Abstract

View articletitled, Understanding the impact of source displacement error on sub-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>90</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> patterns using a fresnel zone plate

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Immersion zone-plate-array lithography

David Chao; Amil Patel; Tymon Barwicz; Henry I. Smith; Rajesh Menon

J. Vac. Sci. Technol. B 23, 2657–2661 (2005) https://doi.org/10.1116/1.2127942

Abstract

View articletitled, Immersion zone-plate-array lithography

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Pumped quantum systems: Immersion fluids of the future?

Vikas Anant; Magnus Rådmark; Ayman F. Abouraddy; Thomas C. Killian; Karl K. Berggren

J. Vac. Sci. Technol. B 23, 2662–2667 (2005) https://doi.org/10.1116/1.2121732

Abstract

View articletitled, Pumped quantum systems: Immersion fluids of the future?

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Hyper high numerical aperature achromatic interferometer for immersion lithography at 193 nm

A. L. Charley; A. Lagrange; O. Lartigue; J. Simon; P. Thony; P. Schiavone

J. Vac. Sci. Technol. B 23, 2668–2674 (2005) https://doi.org/10.1116/1.2135295

Abstract

View articletitled, Hyper high numerical aperature achromatic interferometer for immersion lithography at 193 nm

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Propagating modes in subwavelength cylindrical holes

Peter B. Catrysse; Hocheol Shin; Shanhui Fan

J. Vac. Sci. Technol. B 23, 2675–2678 (2005) https://doi.org/10.1116/1.2130344

Abstract

View articletitled, Propagating modes in subwavelength cylindrical holes

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Full field analysis of lithography performance for ArF immersion lithography

Yanqiu Li; Guosheng Huang

J. Vac. Sci. Technol. B 23, 2679–2683 (2005) https://doi.org/10.1116/1.2101790

Abstract

View articletitled, Full field analysis of lithography performance for ArF immersion lithography

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Simulation of air bubble scattering effects in $193 nm$ immersion interferometric lithography

C. H. Lin; L. A. Wang

J. Vac. Sci. Technol. B 23, 2684–2693 (2005) https://doi.org/10.1116/1.2134716

Abstract

View articletitled, Simulation of air bubble scattering effects in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>193</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> immersion interferometric lithography

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Fabrication of enclosed nanochannels using silica nanoparticles

Deying Xia; S. R. J. Brueck

J. Vac. Sci. Technol. B 23, 2694–2699 (2005) https://doi.org/10.1116/1.2130358

Abstract

View articletitled, Fabrication of enclosed nanochannels using silica nanoparticles

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Large-area, infrared nanophotonic materials fabricated using interferometric lithography

Wenjun Fan; Shuang Zhang; K. J. Malloy; S. R. J. Brueck

J. Vac. Sci. Technol. B 23, 2700–2704 (2005) https://doi.org/10.1116/1.2132334

Abstract

View articletitled, Large-area, infrared nanophotonic materials fabricated using interferometric lithography

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Achromatic spatial frequency multiplication: A method for production of nanometer-scale periodic structures

Harun H. Solak; Yasin Ekinci

J. Vac. Sci. Technol. B 23, 2705–2710 (2005) https://doi.org/10.1116/1.2121735

Abstract

View articletitled, Achromatic spatial frequency multiplication: A method for production of nanometer-scale periodic structures

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Resist Science and Technology

Spectral analysis of line-edge roughness in polyphenol EB-resists and its impact on transistor performance

Atsuko Yamaguchi; Hiroshi Fukuda; Tadashi Arai; Jiro Yamamoto; Taku Hirayama; Daiju Shiono; Hideo Hada; Junichi Onodera

J. Vac. Sci. Technol. B 23, 2711–2715 (2005) https://doi.org/10.1116/1.2110318

Abstract

View articletitled, Spectral analysis of line-edge roughness in polyphenol EB-resists and its impact on transistor performance

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Proton and anion distribution and line edge roughness of chemically amplified electron beam resist

Takahiro Kozawa; Hiroki Yamamoto; Akinori Saeki; Seiichi Tagawa

J. Vac. Sci. Technol. B 23, 2716–2720 (2005) https://doi.org/10.1116/1.2131875

Abstract

View articletitled, Proton and anion distribution and line edge roughness of chemically amplified electron beam resist

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Static and dynamic contact angles of water on photoresist

H. Burnett; T. Shedd; G. Nellis; C. Van Peski

J. Vac. Sci. Technol. B 23, 2721–2727 (2005) https://doi.org/10.1116/1.2131878

Abstract

View articletitled, Static and dynamic contact angles of water on photoresist

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Study on acid generation from polymer

Hiroki Yamamoto; Takahiro Kozawa; Atsuro Nakano; Kazumasa Okamoto; Seiichi Tagawa; Tomoyuki Ando; Mitsuru Sato; Hiroji Komano

J. Vac. Sci. Technol. B 23, 2728–2732 (2005) https://doi.org/10.1116/1.2121730

Abstract

View articletitled, Study on acid generation from polymer

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Full three-dimensional characterization of $25 nm$ lines for chemically amplified resist simulation

S. Landis; S. Pauliac; J. Foucher; J. Thiault; F. de Crecy

J. Vac. Sci. Technol. B 23, 2733–2737 (2005) https://doi.org/10.1116/1.2132327

Abstract

View articletitled, Full three-dimensional characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>25</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> lines for chemically amplified resist simulation

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Maskless Lithography

Effects of through-focus symmetry in maskless lithography using micromirror arrays

J.-S. Wang; S. Hafeman; A. R. Neureuther; O. Solgaard

J. Vac. Sci. Technol. B 23, 2738–2742 (2005) https://doi.org/10.1116/1.2062407

Abstract

View articletitled, Effects of through-focus symmetry in maskless lithography using micromirror arrays

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Hybrid optical maskless lithography: Scaling beyond the $45 nm$ node

M. Fritze; T. M. Bloomstein; B. Tyrrell; T. H. Fedynyshyn; N. N. Efremow, Jr.; D. E. Hardy; S. Cann; D. Lennon; S. Spector; M. Rothschild; P. Brooker

J. Vac. Sci. Technol. B 23, 2743–2748 (2005) https://doi.org/10.1116/1.2062327

Abstract

View articletitled, Hybrid optical maskless lithography: Scaling beyond the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>45</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> node

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Electron Beam Lithography and Imaging

Dynamic chromatic aberration correction in low energy electron microscopes

Anjam Khursheed

J. Vac. Sci. Technol. B 23, 2749–2753 (2005) https://doi.org/10.1116/1.2062432

Abstract

View articletitled, Dynamic chromatic aberration correction in low energy electron microscopes

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Performances by the electron optical system of low energy electron beam proximity projection lithography tool with a large scanning field

Haruo Kasahara; Tsutomu Shishido; Norihiko Samoto; Nobuo Shimazu

J. Vac. Sci. Technol. B 23, 2754–2757 (2005) https://doi.org/10.1116/1.2062435

Abstract

View articletitled, Performances by the electron optical system of low energy electron beam proximity projection lithography tool with a large scanning field

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Narrow cone emission from negative electron affinity photocathodes

Zhi Liu; Yun Sun; P. Pianetta; R. F. W. Pease

J. Vac. Sci. Technol. B 23, 2758–2762 (2005) https://doi.org/10.1116/1.2101726

Abstract

View articletitled, Narrow cone emission from negative electron affinity photocathodes

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Negative charging-up contrast formation of multilayered structures with a nonpenetrating electron beam in scanning-electron microscope

Motosuke Miyoshi; Katsumi Ura

J. Vac. Sci. Technol. B 23, 2763–2768 (2005) https://doi.org/10.1116/1.2101757

Abstract

View articletitled, Negative charging-up contrast formation of multilayered structures with a nonpenetrating electron beam in scanning-electron microscope

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Experimental optimization of the electron-beam proximity effect forward scattering parameter

M. Rooks; N. Belic; E. Kratschmer; R. Viswanathan

J. Vac. Sci. Technol. B 23, 2769–2774 (2005) https://doi.org/10.1116/1.2062431

Abstract

View articletitled, Experimental optimization of the electron-beam proximity effect forward scattering parameter

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Dependence of linewidth and its edge roughness on electron beam exposure dose

M. Kotera; K. Yagura; H. Niu

J. Vac. Sci. Technol. B 23, 2775–2779 (2005) https://doi.org/10.1116/1.2130357

Abstract

View articletitled, Dependence of linewidth and its edge roughness on electron beam exposure dose

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Electron-beam direct writing system employing character projection exposure with production dispatching rule

T. Tominaga; K. Nakamae; T. Matsuo; H. Fujioka; T. Nakasugi; K. Tawarayama

J. Vac. Sci. Technol. B 23, 2780–2783 (2005) https://doi.org/10.1116/1.2135793

Abstract

View articletitled, Electron-beam direct writing system employing character projection exposure with production dispatching rule

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$Sn O_{2}$ lithographic processing for nanopatterned gas sensors

P. Candeloro; E. Comini; C. Baratto; G. Faglia; G. Sberveglieri; R. Kumar; A. Carpentiero; E. Di Fabrizio

J. Vac. Sci. Technol. B 23, 2784–2788 (2005) https://doi.org/10.1116/1.2110371

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sn</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> lithographic processing for nanopatterned gas sensors

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Visualization and in situ contacting of carbon nanotubes in a scanning electron microscope

M. D. Croitoru; G. Bertsche; D. P. Kern; C. Burkhardt; S. Bauerdick; S. Şahakalkan; S. Roth

J. Vac. Sci. Technol. B 23, 2789–2792 (2005) https://doi.org/10.1116/1.2130350

Abstract

View articletitled, Visualization and in situ contacting of carbon nanotubes in a scanning electron microscope

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Towards nano-fluidics by solvent deformation of electron beam resist

J. L. Pearson; D. R. S. Cumming

J. Vac. Sci. Technol. B 23, 2793–2797 (2005) https://doi.org/10.1116/1.2131876

Abstract

View articletitled, Towards nano-fluidics by solvent deformation of electron beam resist

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Particle Beam Technologies

Ion implantation with scanning probe alignment

A. Persaud; J. A. Liddle; T. Schenkel; J. Bokor; Tzv. Ivanov; I. W. Rangelow

J. Vac. Sci. Technol. B 23, 2798–2800 (2005) https://doi.org/10.1116/1.2062628

Abstract

View articletitled, Ion implantation with scanning probe alignment

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Mechanical characteristics and its annealing effect of diamondlike-carbon nanosprings fabricated by focused-ion-beam chemical vapor deposition

Ken-ichiro Nakamatsu; Masao Nagase; Jun-ya Igaki; Hideo Namatsu; Shinji Matsui

J. Vac. Sci. Technol. B 23, 2801–2805 (2005) https://doi.org/10.1116/1.2132329

Abstract

View articletitled, Mechanical characteristics and its annealing effect of diamondlike-carbon nanosprings fabricated by focused-ion-beam chemical vapor deposition

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Cross beam lithography $(FIB + EBL)$ and dip pen nanolithography for nanoparticle conductivity measurements

Stefano Cabrini; Robert J. Barsotti; Alessandro Carpentiero; Luca Businaro; Remo Proietti Zaccaria; Francesco Stellacci; Enzo Di Fabrizio

J. Vac. Sci. Technol. B 23, 2806–2810 (2005) https://doi.org/10.1116/1.2062647

Abstract

View articletitled, Cross beam lithography <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mo>(</mo><mi>FIB</mi><mo>+</mo><mi>EBL</mi><mo>)</mo></mrow></math> and dip pen nanolithography for nanoparticle conductivity measurements

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Writing the identity in radio frequency identity tags with focused ion-beam implantation of transistor gates

Anthony De Marco; William Bandy; Siavash Parsa; Henry Kaufmann; John Melngailis

J. Vac. Sci. Technol. B 23, 2811–2815 (2005) https://doi.org/10.1116/1.2091092

Abstract

View articletitled, Writing the identity in radio frequency identity tags with focused ion-beam implantation of transistor gates

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Analytical model of a gas phase field ionization source

Xuefeng Liu; Jon Orloff

J. Vac. Sci. Technol. B 23, 2816–2820 (2005) https://doi.org/10.1116/1.2127946

Abstract

View articletitled, Analytical model of a gas phase field ionization source

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Electrical properties of nanocontacts on silicon nanoparticles embedded in thin $Si O_{2}$ synthesized by ultralow energy ion implantation

G. Ben Assayag; M. Shalchian; H. Coffin; A. Claverie; J. Grisolia; C. Dumas; S. M. Atarodi

J. Vac. Sci. Technol. B 23, 2821–2824 (2005) https://doi.org/10.1116/1.2132335

Abstract

View articletitled, Electrical properties of nanocontacts on silicon nanoparticles embedded in thin <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> synthesized by ultralow energy ion implantation

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Growth and simulation of high-aspect ratio nanopillars by primary and secondary electron-induced deposition

J. D. Fowlkes; S. J. Randolph; P. D. Rack

J. Vac. Sci. Technol. B 23, 2825–2832 (2005) https://doi.org/10.1116/1.2101732

Abstract

View articletitled, Growth and simulation of high-aspect ratio nanopillars by primary and secondary electron-induced deposition

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Development of a multi-electron-beam source for sub- $10 nm$ electron beam induced deposition

M. J. van Bruggen; B. van Someren; P. Kruit

J. Vac. Sci. Technol. B 23, 2833–2839 (2005) https://doi.org/10.1116/1.2091087

Abstract

View articletitled, Development of a multi-electron-beam source for sub-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>10</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> electron beam induced deposition

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EUV Lithography

Characterization of the synchrotron-based 0.3 numerical aperture extreme ultraviolet microexposure tool at the Advanced Light Source

Patrick Naulleau; Jason P. Cain; Erik Anderson; Kim Dean; Paul Denham; Kenneth A. Goldberg; Brian Hoef; Keith Jackson

J. Vac. Sci. Technol. B 23, 2840–2843 (2005) https://doi.org/10.1116/1.2127940

Abstract

View articletitled, Characterization of the synchrotron-based 0.3 numerical aperture extreme ultraviolet microexposure tool at the Advanced Light Source

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Measuring line roughness through aerial image contrast variation using coherent extreme ultraviolet spatial filtering techniques

Michael D. Shumway; Patrick Naulleau; Kenneth A. Goldberg; Jeffrey Bokor

J. Vac. Sci. Technol. B 23, 2844–2847 (2005) https://doi.org/10.1116/1.2134717

Abstract

View articletitled, Measuring line roughness through aerial image contrast variation using coherent extreme ultraviolet spatial filtering techniques

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Scaling law in acceleration test of extreme ultraviolet lithography projection optics mirror contamination

Yoshio Gomei; Hiromitsu Takase; Takashi Aoki; Shuichi Matsunari; Shigeru Terashima; Yukinobu Kakutani; Masahito Niibe

J. Vac. Sci. Technol. B 23, 2848–2851 (2005) https://doi.org/10.1116/1.2074847

Abstract

View articletitled, Scaling law in acceleration test of extreme ultraviolet lithography projection optics mirror contamination

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Mask defect inspection using an extreme ultraviolet microscope

K. Hamamoto; Y. Tanaka; S. Y. Lee; N. Hosokawa; N. Sakaya; M. Hosoya; T. Shoki; T. Watanabe; H. Kinoshita

J. Vac. Sci. Technol. B 23, 2852–2855 (2005) https://doi.org/10.1116/1.2127943

Abstract

View articletitled, Mask defect inspection using an extreme ultraviolet microscope

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Predicting the dynamic response of an extreme ultraviolet reticle during exposure scanning

G. Dicks; A. Mikkelson; R. Engelstad; E. Lovell

J. Vac. Sci. Technol. B 23, 2856–2859 (2005) https://doi.org/10.1116/1.2101765

Abstract

View articletitled, Predicting the dynamic response of an extreme ultraviolet reticle during exposure scanning

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Printability of nonsmoothed buried defects in extreme ultraviolet lithography mask blanks

Vincent Farys; Christelle Charpin-Nicolle; Marieke Richard; Jean-Yves Robic; Viviane Muffato; Etienne Quesnel; Sergeï Postnikov; Patrick Schiavone; Maxime Besacier; Rafik Smaali; Patrick Naulleau

J. Vac. Sci. Technol. B 23, 2860–2865 (2005) https://doi.org/10.1116/1.2135293

Abstract

View articletitled, Printability of nonsmoothed buried defects in extreme ultraviolet lithography mask blanks

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Investigation of multilayer structural changes in phase and amplitude-defects correction process

Seung Yoon Lee; Tae Geun Kim; Jae Gun Park; Joo Kyoung Song; Oh Hyun Kim; Chul-Woong Yong; Jinho Ahn

J. Vac. Sci. Technol. B 23, 2866–2869 (2005) https://doi.org/10.1116/1.2134715

Abstract

View articletitled, Investigation of multilayer structural changes in phase and amplitude-defects correction process

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Asymmetry of aerial image after mask pattern correction for off-axis incident light in extreme ultraviolet lithography

Minoru Sugawara; Iwao Nishiyama; Mikio Takai

J. Vac. Sci. Technol. B 23, 2870–2874 (2005) https://doi.org/10.1116/1.2135294

Abstract

View articletitled, Asymmetry of aerial image after mask pattern correction for off-axis incident light in extreme ultraviolet lithography

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Imaging characteristics and specification of mask mean-to-target and mask uniformity according to polarization status

Sung-Woo Lee; Jo Finders; Suk-Joo Lee; Sang-Gyun Woo; Han-Ku Cho

J. Vac. Sci. Technol. B 23, 2875–2878 (2005) https://doi.org/10.1116/1.2110307

Abstract

View articletitled, Imaging characteristics and specification of mask mean-to-target and mask uniformity according to polarization status

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Ion emission measurements and mirror erosion studies for extreme ultraviolet lithography

K. Takenoshita; C.-S. Koay; S. George; S. Teerawattansook; M. Richardson; V. Bakshi

J. Vac. Sci. Technol. B 23, 2879–2884 (2005) https://doi.org/10.1116/1.2131879

Abstract

View articletitled, Ion emission measurements and mirror erosion studies for extreme ultraviolet lithography

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Extreme ultraviolet focus sensor design optimization

Kenneth A. Goldberg; Maureen M. Teyssier; J. Alexander Liddle

J. Vac. Sci. Technol. B 23, 2885–2890 (2005) https://doi.org/10.1116/1.2134719

Abstract

View articletitled, Extreme ultraviolet focus sensor design optimization

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Electrical characterization of multilayer masks for extreme ultraviolet lithography

J. G. Hartley; S. Raghunathan; A. Govindaraju

J. Vac. Sci. Technol. B 23, 2891–2895 (2005) https://doi.org/10.1116/1.2062607

Abstract

View articletitled, Electrical characterization of multilayer masks for extreme ultraviolet lithography

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X-ray Lithography

Development, installation, and performance of the x-ray stepper JSAL 5C

Q. Leonard; D. Malueg; J. Wallace; J. W. Taylor; S. Dhuey; F. Cerrina; B. Boerger; R. Selzer; M. Yu; Y. Ma; K. Myers; M. Trybendis; E. Moon; H. I. Smith

J. Vac. Sci. Technol. B 23, 2896–2902 (2005) https://doi.org/10.1116/1.2121711

Abstract

View articletitled, Development, installation, and performance of the x-ray stepper JSAL 5C

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Large area and wide dimension range x-ray lithography for lithographite, galvanoformung, and abformung process using energy variable synchrotron radiation

Yuichi Utsumi; Takefumi Kishimoto

J. Vac. Sci. Technol. B 23, 2903–2909 (2005) https://doi.org/10.1116/1.2131880

Abstract

View articletitled, Large area and wide dimension range x-ray lithography for lithographite, galvanoformung, and abformung process using energy variable synchrotron radiation

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Functionalized SU-8 patterned with x-ray lithography

S. Balslev; F. Romanato

J. Vac. Sci. Technol. B 23, 2910–2913 (2005) https://doi.org/10.1116/1.2062651

Abstract

View articletitled, Functionalized SU-8 patterned with x-ray lithography

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Nanoimprint Techniques

4 inch lift-off process by trilayer nanoimprint lithography

J. Tallal; K. Berton; M. Gordon; D. Peyrade

J. Vac. Sci. Technol. B 23, 2914–2919 (2005) https://doi.org/10.1116/1.2130351

Abstract

View articletitled, 4 inch lift-off process by trilayer nanoimprint lithography

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Fabrication of three-dimensional stamps for embossing techniques by lithographically controlled isotropic wet etching

Massimo Tormen; Alessandro Carpentiero; Lisa Vaccari; Matteo Altissimo; Enrico Ferrari; Dan Cojoc; Enzo Di Fabrizio

J. Vac. Sci. Technol. B 23, 2920–2924 (2005) https://doi.org/10.1116/1.2130348

Abstract

View articletitled, Fabrication of three-dimensional stamps for embossing techniques by lithographically controlled isotropic wet etching

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Ultraviolet-based nanoimprint at reduced environmental pressure

A. Fuchs; M. Bender; U. Plachetka; U. Hermanns; H. Kurz

J. Vac. Sci. Technol. B 23, 2925–2928 (2005) https://doi.org/10.1116/1.2132325

Abstract

View articletitled, Ultraviolet-based nanoimprint at reduced environmental pressure

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Enhanced molecular patterning via microdisplacement printing

Arrelaine A. Dameron; Jennifer R. Hampton; Susan D. Gillmor; J. Nathan Hohman; Paul S. Weiss

J. Vac. Sci. Technol. B 23, 2929–2932 (2005) https://doi.org/10.1116/1.2135794

Abstract

View articletitled, Enhanced molecular patterning via microdisplacement printing

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Defect control in nanoimprint lithography

Lei Chen; Xuegong Deng; Jian Wang; Ken Takahashi; Feng Liu

J. Vac. Sci. Technol. B 23, 2933–2938 (2005) https://doi.org/10.1116/1.2130352

Abstract

View articletitled, Defect control in nanoimprint lithography

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Fabrication of $1 ∕ 4$ wave plate by nanocasting lithography

Takashi Yoshikawa; Takaaki Konishi; Masaki Nakajima; Hisao Kikuta; Hiroaki Kawata; Yoshihiko Hirai

J. Vac. Sci. Technol. B 23, 2939–2943 (2005) https://doi.org/10.1116/1.2127953

Abstract

View articletitled, Fabrication of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1</mn><mo>∕</mo><mn>4</mn></mrow></math> wave plate by nanocasting lithography

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Topas-based lab-on-a-chip microsystems fabricated by thermal nanoimprint lithography

B. Bilenberg; M. Hansen; D. Johansen; V. Özkapici; C. Jeppesen; P. Szabo; I. M. Obieta; O. Arroyo; J. O. Tegenfeldt; A. Kristensen

J. Vac. Sci. Technol. B 23, 2944–2949 (2005) https://doi.org/10.1116/1.2091089

Abstract

View articletitled, Topas-based lab-on-a-chip microsystems fabricated by thermal nanoimprint lithography

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High performance $100 mm$ -in-diameter true zero-order waveplates fabricated by imprint lithography

Jian Jim Wang; Xuegong Deng; Feng Liu; Lei Chen; Anguel Nikolov; Xiaoming Liu; Jiandong Deng; Paul Sciortino

J. Vac. Sci. Technol. B 23, 2950–2953 (2005) https://doi.org/10.1116/1.2062430

Abstract

View articletitled, High performance <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>100</mn><mspace width="0.3em"></mspace><mi>mm</mi></mrow></math>-in-diameter true zero-order waveplates fabricated by imprint lithography

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Three-dimensional polymer structures fabricated by reversal ultraviolet-curing imprint lithography

N. Kehagias; M. Zelsmann; C. M. Sotomayor Torres; K. Pfeiffer; G. Ahrens; G. Gruetzner

J. Vac. Sci. Technol. B 23, 2954–2957 (2005) https://doi.org/10.1116/1.2130349

Abstract

View articletitled, Three-dimensional polymer structures fabricated by reversal ultraviolet-curing imprint lithography

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Simulations of nonuniform embossing: The effect of asymmetric neighbor cavities on polymer flow during nanoimprint lithography

Harry D. Rowland; William P. King; Amy C. Sun; P. Randy Schunk

J. Vac. Sci. Technol. B 23, 2958–2962 (2005) https://doi.org/10.1116/1.2127939

Abstract

View articletitled, Simulations of nonuniform embossing: The effect of asymmetric neighbor cavities on polymer flow during nanoimprint lithography

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Polymer time constants during low temperature nanoimprint lithography

H.-C. Scheer; N. Bogdanski; M. Wissen; T. Konishi; Y. Hirai

J. Vac. Sci. Technol. B 23, 2963–2966 (2005) https://doi.org/10.1116/1.2121727

Abstract

View articletitled, Polymer time constants during low temperature nanoimprint lithography

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Vinyl ether formulations for step and flash imprint lithography

E. K. Kim; M. D. Stewart; K. Wu; F. L. Palmieri; M. D. Dickey; J. G. Ekerdt; C. G. Willson

J. Vac. Sci. Technol. B 23, 2967–2971 (2005) https://doi.org/10.1116/1.2131881

Abstract

View articletitled, Vinyl ether formulations for step and flash imprint lithography

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Nanostructures for Biology

Fabrication and surface chemistry of nanoscale bioarrays designed for the study of cytoskeletal protein binding interactions and their effect on cell motility

O. Cherniavskaya; C. J. Chen; E. Heller; E. Sun; J. Provezano; L. Kam; J. Hone; M. P. Sheetz; S. J. Wind

J. Vac. Sci. Technol. B 23, 2972–2978 (2005) https://doi.org/10.1116/1.2132332

Abstract

View articletitled, Fabrication and surface chemistry of nanoscale bioarrays designed for the study of cytoskeletal protein binding interactions and their effect on cell motility

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Arrays of high- $Q$ high stability ultrahigh-frequency resonators for chemical/biological sensors

R. L. Kubena; D. T. Chang; F. P. Stratton; Richard J. Joyce; T. Y. Hsu; M. K. Lim; R. T. M’Closkey

J. Vac. Sci. Technol. B 23, 2979–2983 (2005) https://doi.org/10.1116/1.2121731

Abstract

View articletitled, Arrays of high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">Q</mi></math> high stability ultrahigh-frequency resonators for chemical/biological sensors

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Effects of nanoimprinted patterns in tissue-culture polystyrene on cell behavior

W. Hu; E. K. F. Yim; R. M. Reano; K. W. Leong; S. W. Pang

J. Vac. Sci. Technol. B 23, 2984–2989 (2005) https://doi.org/10.1116/1.2121729

Abstract

View articletitled, Effects of nanoimprinted patterns in tissue-culture polystyrene on cell behavior

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Three-dimensional digital scanner based on micromachined micromirror for the metrological measurement of the human ear canal

M. Prasciolu; R. Malureanu; S. Cabrini; D. Cojoc; L. Businaro; A. Carpentiero; R. Kumar; E. Di Fabrizio

J. Vac. Sci. Technol. B 23, 2990–2994 (2005) https://doi.org/10.1116/1.2121734

Abstract

View articletitled, Three-dimensional digital scanner based on micromachined micromirror for the metrological measurement of the human ear canal

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Sealed three-dimensional nanochannels

R. M. Reano; S. W. Pang

J. Vac. Sci. Technol. B 23, 2995–2999 (2005) https://doi.org/10.1116/1.2121728

Abstract

View articletitled, Sealed three-dimensional nanochannels

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Self-aligned platinum-silicide nanowires for biomolecule sensing

Fu-Hsiang Ko; Zen-Hou Yeh; Chun-Chi Chen; Tzeng-Feng Liu

J. Vac. Sci. Technol. B 23, 3000–3005 (2005) https://doi.org/10.1116/1.2090967

Abstract

View articletitled, Self-aligned platinum-silicide nanowires for biomolecule sensing

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Resonant grating filters as refractive index sensors for chemical and biological detections

Jian Jim Wang; Lei Chen; Steven Kwan; Feng Liu; Xuegong Deng

J. Vac. Sci. Technol. B 23, 3006–3010 (2005) https://doi.org/10.1116/1.2101774

Abstract

View articletitled, Resonant grating filters as refractive index sensors for chemical and biological detections

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Polymer cell culture substrates with combined nanotopographical patterns and micropatterned chemical domains

Joseph L. Charest; Marcus T. Eliason; Andrés J. García; William P. King; A. Alec Talin; Blake A. Simmons

J. Vac. Sci. Technol. B 23, 3011–3014 (2005) https://doi.org/10.1116/1.2127951

Abstract

View articletitled, Polymer cell culture substrates with combined nanotopographical patterns and micropatterned chemical domains

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Metrology, Alignment, and CD Control

Advanced electron microscopy needs for nanotechnology and nanomanufacturing

Michael T. Postek; John S. Villarrubia; András E. Vladár

J. Vac. Sci. Technol. B 23, 3015–3022 (2005) https://doi.org/10.1116/1.2135795

Abstract

View articletitled, Advanced electron microscopy needs for nanotechnology and nanomanufacturing

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Effect of initial resist thickness on residual layer thickness of nanoimprinted structures

Hae-Jeong Lee; Hyun Wook Ro; Christopher L. Soles; Ronald L. Jones; Eric K. Lin; Wen-li Wu; D. R. Hines

J. Vac. Sci. Technol. B 23, 3023–3027 (2005) https://doi.org/10.1116/1.2101776

Abstract

View articletitled, Effect of initial resist thickness on residual layer thickness of nanoimprinted structures

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Traceable calibration of critical-dimension atomic force microscope linewidth measurements with nanometer uncertainty

R. G. Dixson; R. A. Allen; W. F. Guthrie; M. W. Cresswell

J. Vac. Sci. Technol. B 23, 3028–3032 (2005) https://doi.org/10.1116/1.2130347

Abstract

View articletitled, Traceable calibration of critical-dimension atomic force microscope linewidth measurements with nanometer uncertainty

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Local critical dimension variation from shot-noise related line edge roughness

P. Kruit; S. Steenbrink

J. Vac. Sci. Technol. B 23, 3033–3036 (2005) https://doi.org/10.1116/1.2127941

Abstract

View articletitled, Local critical dimension variation from shot-noise related line edge roughness

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Subpixel alignment for scanning-beam lithography using one-dimensional, phase-based mark detection

A. V. Krishnamurthy; R. V. Namepalli; J. T. Hastings

J. Vac. Sci. Technol. B 23, 3037–3042 (2005) https://doi.org/10.1116/1.2062547

Abstract

View articletitled, Subpixel alignment for scanning-beam lithography using one-dimensional, phase-based mark detection

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Investigation of overlay errors due to the interaction of optical and extreme ultraviolet mask fabrication processes

L. Zheng; R. L. Engelstad; E. G. Lovell

J. Vac. Sci. Technol. B 23, 3043–3046 (2005) https://doi.org/10.1116/1.2127949

Abstract

View articletitled, Investigation of overlay errors due to the interaction of optical and extreme ultraviolet mask fabrication processes

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Overlay alignment using optical microscopy and arbitrary surface features

Carl Picciotto; Jun Gao; Eric Hoarau; Wei Wu; Warren Jackson; William M. Tong

J. Vac. Sci. Technol. B 23, 3047–3051 (2005) https://doi.org/10.1116/1.2062667

Abstract

View articletitled, Overlay alignment using optical microscopy and arbitrary surface features

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Technique for estimating the angle of incidence and depth of focus of an electron beam

Fumio Mizuno; Isao Amemiya; Kazutake Taniguchi

J. Vac. Sci. Technol. B 23, 3052–3055 (2005) https://doi.org/10.1116/1.2127947

Abstract

View articletitled, Technique for estimating the angle of incidence and depth of focus of an electron beam

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Portable coordinate measuring tool

Li Jiang; M. Feldman

J. Vac. Sci. Technol. B 23, 3056–3060 (2005) https://doi.org/10.1116/1.2134718

Abstract

View articletitled, Portable coordinate measuring tool

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Fabrication of high-secondary-electron-yield grids for spatial-phase-locked electron-beam lithography

Feng Zhang; Henry I. Smith; Jianfeng Dai

J. Vac. Sci. Technol. B 23, 3061–3064 (2005) https://doi.org/10.1116/1.2110341

Abstract

View articletitled, Fabrication of high-secondary-electron-yield grids for spatial-phase-locked electron-beam lithography

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Pattern matching between a scanning electron microscopy exposed pattern image of large-scale integrated fine structures and computer-aided design layout data by using the relaxation method

K. Miura; M. Fujita; K. Nakamae; H. Fujioka

J. Vac. Sci. Technol. B 23, 3065–3068 (2005) https://doi.org/10.1116/1.2131877

Abstract

View articletitled, Pattern matching between a scanning electron microscopy exposed pattern image of large-scale integrated fine structures and computer-aided design layout data by using the relaxation method

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Measurement of residual thickness using scatterometry

David Fuard; Corinne Perret; Vincent Farys; Cécile Gourgon; Patrick Schiavone

J. Vac. Sci. Technol. B 23, 3069–3074 (2005) https://doi.org/10.1116/1.2130345

Abstract

View articletitled, Measurement of residual thickness using scatterometry

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Line edge roughness characterization with a three-dimensional atomic force microscope: Transfer during gate patterning processes

J. Thiault; J. Foucher; J. H. Tortai; O. Joubert; S. Landis; S. Pauliac

J. Vac. Sci. Technol. B 23, 3075–3079 (2005) https://doi.org/10.1116/1.2101789

Abstract

View articletitled, Line edge roughness characterization with a three-dimensional atomic force microscope: Transfer during gate patterning processes

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Reconstruction of pattern images from scanning electron microscope images

Hanying Feng; Jun Ye; R. Fabian W. Pease

J. Vac. Sci. Technol. B 23, 3080–3084 (2005) https://doi.org/10.1116/1.2127944

Abstract

View articletitled, Reconstruction of pattern images from scanning electron microscope images

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Self inspection of integrated circuits pattern defects using support vector machines

Hanying Feng; Jun Ye; R. Fabian Pease

J. Vac. Sci. Technol. B 23, 3085–3089 (2005) https://doi.org/10.1116/1.2062434

Abstract

View articletitled, Self inspection of integrated circuits pattern defects using support vector machines

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Advanced atomic force microscopy probes: Wear resistant designs

H. Liu; M. Klonowski; D. Kneeburg; G. Dahlen; M. Osborn; T. Bao

J. Vac. Sci. Technol. B 23, 3090–3093 (2005) https://doi.org/10.1116/1.2127936

Abstract

View articletitled, Advanced atomic force microscopy probes: Wear resistant designs

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Improving critical dimension accuracy and throughput by subfield scheduling in electron beam mask writing

Sergey Babin; Andrew B. Kahng; Ion I. Măndoiu; Swamy Muddu

J. Vac. Sci. Technol. B 23, 3094–3100 (2005) https://doi.org/10.1116/1.2132330

Abstract

View articletitled, Improving critical dimension accuracy and throughput by subfield scheduling in electron beam mask writing

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Mask Making Technology

Advanced photolithographic mask repair using electron beams

Ted Liang; Eric Frendberg; Barry Lieberman; Alan Stivers

J. Vac. Sci. Technol. B 23, 3101–3105 (2005) https://doi.org/10.1116/1.2062428

Abstract

View articletitled, Advanced photolithographic mask repair using electron beams

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Electromagnetic phenomena in advanced photomasks

F. M. Schellenberg; K. Adam; J. Matteo; L. Hesselink

J. Vac. Sci. Technol. B 23, 3106–3115 (2005) https://doi.org/10.1116/1.2110281

Abstract

View articletitled, Electromagnetic phenomena in advanced photomasks

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Etching and Deposition for the Nanometer Era

Innovative approach to nanoscale device fabrication and low-temperature nitride film growth

Elshan A. Akhadov; D. E. Read; Alexander H. Mueller; Jacqueline Murray; Mark A. Hoffbauer

J. Vac. Sci. Technol. B 23, 3116–3119 (2005) https://doi.org/10.1116/1.2130346

Abstract

View articletitled, Innovative approach to nanoscale device fabrication and low-temperature nitride film growth

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Electron beam lithography patterning of sub- $10 nm$ line using hydrogen silsesquioxane for nanoscale device applications

In-Bok Baek; Jong-Heon Yang; Won-Ju Cho; Chang-Geun Ahn; Kiju Im; Seongjae Lee

J. Vac. Sci. Technol. B 23, 3120–3123 (2005) https://doi.org/10.1116/1.2132328

Abstract

View articletitled, Electron beam lithography patterning of sub-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>10</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> line using hydrogen silsesquioxane for nanoscale device applications

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Direct-write e-beam patterning of stimuli-responsive hydrogel nanostructures

Vijay R. Tirumala; Ralu Divan; Leonidas E. Ocola; Derrick C. Mancini

J. Vac. Sci. Technol. B 23, 3124–3128 (2005) https://doi.org/10.1116/1.2062649

Abstract

View articletitled, Direct-write e-beam patterning of stimuli-responsive hydrogel nanostructures

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Reduction of oxide layer on Ru surface by atomic-hydrogen treatment

I. Nishiyama; H. Oizumi; K. Motai; A. Izumi; T. Ueno; H. Akiyama; A. Namiki

J. Vac. Sci. Technol. B 23, 3129–3131 (2005) https://doi.org/10.1116/1.2130356

Abstract

View articletitled, Reduction of oxide layer on Ru surface by atomic-hydrogen treatment

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Nanoscale patterning in application to materials and device structures

A. Erbe; W. Jiang; Z. Bao; D. Abusch-Magder; D. M. Tennant; E. Garfunkel; N. Zhitenev

J. Vac. Sci. Technol. B 23, 3132–3137 (2005) https://doi.org/10.1116/1.2130353

Abstract

View articletitled, Nanoscale patterning in application to materials and device structures

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Low damage sputter deposition of tungsten for decanano compound semiconductor transistors

X. Cao; D. S. Macintyre; S. Thoms; X. Li; H. Zhou; C. D. W. Wilkinson; M. Holland; L. Donaldson; F. McEwan; H. McLellend; I. Thayne

J. Vac. Sci. Technol. B 23, 3138–3142 (2005) https://doi.org/10.1116/1.2127937

Abstract

View articletitled, Low damage sputter deposition of tungsten for decanano compound semiconductor transistors

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Copper germanide Ohmic contact on $n$ -type gallium nitride using silicon tetrachloride plasma

Michael L. Schuette; Wu Lu

J. Vac. Sci. Technol. B 23, 3143–3147 (2005) https://doi.org/10.1116/1.2132331

Abstract

View articletitled, Copper germanide Ohmic contact on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type gallium nitride using silicon tetrachloride plasma

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Simulation of the cathode surface damages in a HOPFED during ion bombardment

Hongping Zhao; Wei Lei; Xiaobing Zhang; Xiaohua Li; Qilong Wang

J. Vac. Sci. Technol. B 23, 3148–3152 (2005) https://doi.org/10.1116/1.2134720