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September 2005

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

Regular Articles

Real-time material quality prediction, fault detection, and contamination control in $Al Ga N ∕ Ga N$ high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing

Soon Cho; Gary W. Rubloff; Michael E. Aumer; Darren B. Thomson; Deborah P. Partlow

J. Vac. Sci. Technol. B 23, 1849–1855 (2005) https://doi.org/10.1116/1.2006110

Abstract

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Protein binding on thermally grown silicon dioxide

Stephen C. Lee; Matthew T. Keener; Dharma R. Tokachichu; Bharat Bhushan; Phillip D. Barnes; Benjamin R. Cipriany; Min Gao; Leonard J. Brillson

J. Vac. Sci. Technol. B 23, 1856–1865 (2005) https://doi.org/10.1116/1.2006127

Abstract

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Silicon carbide based dielectric composites in bilayer sidewall barrier for Cu∕porous ultralow- $k$ interconnects

Zhe Chen; K. Prasad; N. Jiang; L. J. Tang; P. W. Lu; C. Y. Li

J. Vac. Sci. Technol. B 23, 1866–1872 (2005) https://doi.org/10.1116/1.2006129

Abstract

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Formation of vertical ridge structure in $660 nm$ laser diodes for high power single mode operation

Soohaeng Cho; Sangbum Lee; Joonseok Kang; Byungjin Ma; Changyun Lee; Youngchul Shin; Bumjoon Kim; Donghoon Kang; Youngmin Kim; Yongjo Park

J. Vac. Sci. Technol. B 23, 1873–1876 (2005) https://doi.org/10.1116/1.2006133

Abstract

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As-doped polysilicon emitters with interfacial oxides and correlation to bipolar device characteristics

A. T. Tilke; M. Förster; K. Schupke; A. Freigofas; C. Wagner; C. Dahl

J. Vac. Sci. Technol. B 23, 1877–1882 (2005) https://doi.org/10.1116/1.2006134

Abstract

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Thermal conductivity of B-C-N and BN nanotubes

C. W. Chang; Wei-Qiang Han; A. Zettl

J. Vac. Sci. Technol. B 23, 1883–1886 (2005) https://doi.org/10.1116/1.2008266

Abstract

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Fabrication of identical sub-100 nm closely spaced parallel lines using electron beam lithography

Ke Chen; Shane A. Cybart; R. C. Dynes

J. Vac. Sci. Technol. B 23, 1887–1890 (2005) https://doi.org/10.1116/1.2008267

Abstract

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Pt-coated InN nanorods for selective detection of hydrogen at room temperature

O. Kryliouk; H. J. Park; H. T. Wang; B. S. Kang; T. J. Anderson; F. Ren; S. J. Pearton

J. Vac. Sci. Technol. B 23, 1891–1894 (2005) https://doi.org/10.1116/1.2008268

Abstract

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Electron beam lithography with negative Calixarene resists on dense materials: Taking advantage of proximity effects to increase pattern density

S. Bühlmann; P. Muralt; P.-A. Kuenzi; U. Staufer

J. Vac. Sci. Technol. B 23, 1895–1900 (2005) https://doi.org/10.1116/1.2008269

Abstract

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Effect of film thickness on the ferroelectric properties of $Pb ({Zr}_{0.2} {Ti}_{0.8}) O_{3}$ thin films for nano-data storage applications

Woo-Sung Lee; Kyoung-Chan Ahn; Soon-Gil Yoon; Chang Soo Kim

J. Vac. Sci. Technol. B 23, 1901–1904 (2005) https://doi.org/10.1116/1.2008270

Abstract

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Epitaxial growth of $Ni {Si}_{2}$ on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thin ${Si}_{3} N_{4}$ layer

S. Y. Chen; L. J. Chen; S. D. Tzeng; S. Gwo

J. Vac. Sci. Technol. B 23, 1905–1908 (2005) https://doi.org/10.1116/1.2000967

Abstract

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Temperature dependence of carrier dynamics for $In As ∕ Ga As$ quantum dot infrared photodetectors

Chun-Yuan Huang; Tzu-Min Ou; Shu-Ting Chou; Cheng-Shuan Tsai; Meng-Chyi Wu; Shih-Yen Lin; Jim-Yong Chi

J. Vac. Sci. Technol. B 23, 1909–1912 (2005) https://doi.org/10.1116/1.2008271

Abstract

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Towards a controlled patterning of 10 nm silicon gates in high density plasmas

E. Pargon; M. Darnon; O. Joubert; T. Chevolleau; L. Vallier; L. Mollard; T. Lill

J. Vac. Sci. Technol. B 23, 1913–1923 (2005) https://doi.org/10.1116/1.2008272

Abstract

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Silver coplanar waveguides as the passive components of choice for microwave integrated circuits

Vladislav V. Levenets; Rony E. Amaya; N. Garry Tarr; Tom J. Smy; John W. M. Rogers

J. Vac. Sci. Technol. B 23, 1924–1928 (2005) https://doi.org/10.1116/1.2013311

Abstract

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Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAs

Jeramy D. Zimmerman; Elliott R. Brown; Arthur C. Gossard

J. Vac. Sci. Technol. B 23, 1929–1935 (2005) https://doi.org/10.1116/1.2013312

Abstract

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Investigations on the mechanism of silicon etching with chlorine-trifluoride

Arnim Höchst; Frank Fischer; Gunter Kirbach; Andrea Urban; Volker Becker; Mathias Irmscher; Holger Sailer; Dieter P. Kern

J. Vac. Sci. Technol. B 23, 1936–1942 (2005) https://doi.org/10.1116/1.2013313

Abstract

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Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

Chin-Chuan Cheng; Yan-Ying Tsai; Kun-Wei Lin; Huey-Ing Chen; Wei-Hsi Hsu; Ching-Wen Hong; Han-Lien Lin; Wen-Chau Liu

J. Vac. Sci. Technol. B 23, 1943–1947 (2005) https://doi.org/10.1116/1.2013314

Abstract

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Field-emission characteristics of boron–carbon–nitride nanofilm

Chiharu Kimura; Hidekazu Shima; Kunitaka Okada; Shingo Funakawa; Takashi Sugino

J. Vac. Sci. Technol. B 23, 1948–1951 (2005) https://doi.org/10.1116/1.2006130

Abstract

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Study of diffusion and quality control for $Co {Si}_{2}$ formation by oxide-mediated cobalt silicidation with Ti capping

Juin-Jie Chang; Chuan-Pu Liu; Tsung-Eong Hsieh; Ying-Lang Wang

J. Vac. Sci. Technol. B 23, 1952–1955 (2005) https://doi.org/10.1116/1.2006132

Abstract

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Influence of the growth temperature on the atomic distribution of TEOS deposited $Si O_{2}$ films

Vassilis Em. Vamvakas; Dimitris Davazoglou

J. Vac. Sci. Technol. B 23, 1956–1963 (2005) https://doi.org/10.1116/1.2038047

Abstract

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Spindt tip composed of carbon nanotubes

Jong Hyun Moon; Sung Hoon Lim; Hyun Sik Yoon; Kyu Chang Park; Simon Kang; Craig Bae; Jung Jae Kim; Jin Jang

J. Vac. Sci. Technol. B 23, 1964–1969 (2005) https://doi.org/10.1116/1.2037628

Abstract

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Electrical and optical characteristics of hydrogen-plasma treated ZnO nanoneedles

Jinkyoung Yoo; Won Il Park; Gyu-Chul Yi

J. Vac. Sci. Technol. B 23, 1970–1974 (2005) https://doi.org/10.1116/1.2037667

Abstract

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Density of electron-beam-induced amorphous carbon deposits

Mitsumasa Nishio; Shintaro Sawaya; Seiji Akita; Yoshikazu Nakayama

J. Vac. Sci. Technol. B 23, 1975–1979 (2005) https://doi.org/10.1116/1.2037687

Abstract

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Surface-enhanced Raman spectroscopy of nanodiamond particles on silver

E. Perevedentseva; A. Karmenyan; P.-H. Chung; C.-L. Cheng

J. Vac. Sci. Technol. B 23, 1980–1983 (2005) https://doi.org/10.1116/1.2041650

Abstract

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Chemically assisted ion beam etching of $GaAs$ by argon and chlorine gases: Experimental and simulation investigations

A. Rhallabi; M. Gaillard; L. Elmonser; G. Marcos; Anne Talneau; F. Pommereau; Ph. Pagnod-Rossiaux; J. P. Landesman; N. Bouadma

J. Vac. Sci. Technol. B 23, 1984–1991 (2005) https://doi.org/10.1116/1.2041653

Abstract

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Microelectromechanical device for lateral force calibration in the atomic force microscope: Lateral electrical nanobalance

Peter J. Cumpson; John Hedley; Charles A. Clifford

J. Vac. Sci. Technol. B 23, 1992–1997 (2005) https://doi.org/10.1116/1.2044809

Abstract

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Synthesis, characterization, and investigation of a conformationally immobile calix[6]arene as a negative electron beam resist

Gabriel H. Monreal; Sara J. Staggs; Michael T. Blanda; Wilhelmus J. Geerts; Heather C. Galloway; Gregory F. Spencer

J. Vac. Sci. Technol. B 23, 1998–2002 (2005) https://doi.org/10.1116/1.2038027

Abstract

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Lithographic characterization of the field dependent astigmatism and alignment stability of a 0.3 numerical aperture extreme ultraviolet microfield optic

Patrick P. Naulleau; Jason P. Cain; Kenneth A. Goldberg

J. Vac. Sci. Technol. B 23, 2003–2006 (2005) https://doi.org/10.1116/1.2037647

Abstract

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In situ chemical sensing in $Al Ga N ∕ Ga N$ metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control

Soon Cho; Daniel S. Janiak; Gary W. Rubloff; Michael E. Aumer; Darren B. Thomson; Deborah P. Partlow

J. Vac. Sci. Technol. B 23, 2007–2013 (2005) https://doi.org/10.1116/1.2037707

Abstract

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Shutter transients during solid-source epitaxy

Ch. Heyn; S. Cunis

J. Vac. Sci. Technol. B 23, 2014–2020 (2005) https://doi.org/10.1116/1.2041648

Abstract

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Impurity redistribution due to recrystallization of preamorphized silicon

R. Duffy; V. C. Venezia; K. van der Tak; M. J. P. Hopstaken; G. C. J. Maas; F. Roozeboom; Y. Tamminga; T. Dao

J. Vac. Sci. Technol. B 23, 2021–2029 (2005) https://doi.org/10.1116/1.2044813

Abstract

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Determination of Mg composition in ${Mg}_{x} {Zn}_{1 - x} O$ alloy: Validity of Vegard’s law

A. B. M. Almamun Ashrafi; Yusaburo Segawa

J. Vac. Sci. Technol. B 23, 2030–2033 (2005) https://doi.org/10.1116/1.2050653

Abstract

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Thermal stability of trimethylsilylated mesoporous silica thin films as the ultralow- $k$ dielectric for copper interconnects

J. Y. Chen; F. M. Pan; L. Chang; A. T. Cho; K. J. Chao

J. Vac. Sci. Technol. B 23, 2034–2040 (2005) https://doi.org/10.1116/1.2050656

Abstract

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Effect of mask thickness on the nanoscale sidewall roughness and optical scattering losses of deep-etched $In P ∕ In Ga As P$ high mesa waveguides

W. Zhao; J. W. Bae; I. Adesida; J. H. Jang

J. Vac. Sci. Technol. B 23, 2041–2045 (2005) https://doi.org/10.1116/1.2050659

Abstract

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Reactive ion etching of a 20 nanometers tungsten gate using a ${SF}_{6} ∕ N_{2}$ chemistry and hydrogen silsesquioxane hard mask resist

Guilhem Larrieu; Emmanuel Dubois

J. Vac. Sci. Technol. B 23, 2046–2050 (2005) https://doi.org/10.1116/1.2050654

Abstract

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Nanopatterning of polyfluorene derivative using electron-beam lithography

Yusuke Doi; Akinori Saeki; Yoshiko Koizumi; Shu Seki; Kazumasa Okamoto; Takahiro Kozawa; Seiichi Tagawa

J. Vac. Sci. Technol. B 23, 2051–2055 (2005) https://doi.org/10.1116/1.2050655

Abstract

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$50 \times 50 μ m$ pixel magnetic focus field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target

N. Egami; M. Nanba; Y. Takiguchi; K. Miyakawa; T. Watabe; S. Okazaki; K. Osada; Y. Obara; M. Tanaka; S. Itoh

J. Vac. Sci. Technol. B 23, 2056–2062 (2005) https://doi.org/10.1116/1.2050658

Abstract

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Highly anisotropic gate electrode patterning in neutral beam etching using $F_{2}$ gas chemistry

Shuichi Noda; Yasuyuki Hoshino; Takuya Ozaki; Seiji Samukawa

J. Vac. Sci. Technol. B 23, 2063–2068 (2005) https://doi.org/10.1116/1.2050660

Abstract

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Effects of ambient gases on the direct growth of $SiC$ nanowires by a simple heating method

Yonghwan Ryu; Kijung Yong

J. Vac. Sci. Technol. B 23, 2069–2072 (2005) https://doi.org/10.1116/1.2050667

Abstract

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Profile evolution of $Cr$ masked features undergoing $HBr$ -inductively coupled plasma etching for use in $25 nm$ silicon nanoimprint templates

Deirdre L. Olynick; J. Alexander Liddle; Ivo W. Rangelow

J. Vac. Sci. Technol. B 23, 2073–2077 (2005) https://doi.org/10.1116/1.2050669

Abstract

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Effect of film thickness and annealing temperature on the carbon induced interfacial charge of tetraethoxyorthosilicate based oxide films on $p$ -type Si(100)

Victor M. Torres; Azghar Khazi-Syed

J. Vac. Sci. Technol. B 23, 2078–2083 (2005) https://doi.org/10.1116/1.2006131

Abstract

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Prevention of Cu degradation using in situ $N_{2}$ plasma treatment in a dual-damascene process

Shingo Tomohisa; Kazunori Yoshikawa; Kazumasa Yonekura; Shigenori Sakamori; Nobuo Fujiwara; Kazunori Tsujimoto; Kyusaku Nishioka; Hiroshi Kobayashi; Tatsuo Oomori

J. Vac. Sci. Technol. B 23, 2084–2088 (2005) https://doi.org/10.1116/1.2050671

Abstract

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Effect of ${Li}_{0.5} {La}_{0.5} Ti O_{3}$ solid electrolyte films on electrochemical properties of $Li Co O_{2}$ thin film cathodes with different rapid-thermal annealing conditions

Jun-Ku Ahn; Soon-Gil Yoon; Chang Soo Kim

J. Vac. Sci. Technol. B 23, 2089–2094 (2005) https://doi.org/10.1116/1.2052711

Abstract

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Conformability and optical reflectance of $Ti ∕ Au$ film sputtered on the Si vertical sidewalls

Kyoung-Woo Jo; Sung-Sik Yun; Nallamuthu Punithavelan; Sung Ho Jeong; Sun kyu Lee; Jong-Hyun Lee

J. Vac. Sci. Technol. B 23, 2095–2101 (2005) https://doi.org/10.1116/1.2052712

Abstract

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Simultaneous elastic and electromechanical imaging by scanning probe microscopy: Theory and applications to ferroelectric and biological materials

J. Shin; B. J. Rodriguez; A. P. Baddorf; T. Thundat; E. Karapetian; M. Kachanov; A. Gruverman; S. V. Kalinin

J. Vac. Sci. Technol. B 23, 2102–2108 (2005) https://doi.org/10.1116/1.2052714

Abstract

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Effects of substrate temperature on the growth of InGaAs compositionally graded buffers and on quantum well structures grown above them

Henry K. H. Choy; Clifton G. Fonstad, Jr.

J. Vac. Sci. Technol. B 23, 2109–2113 (2005) https://doi.org/10.1116/1.2052727

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Physical properties of nanostructures grown by oblique angle deposition

J. P. Singh; T. Karabacak; D.-X. Ye; D.-L. Liu; C. Picu; T.-M. Lu; G.-C. Wang

J. Vac. Sci. Technol. B 23, 2114–2121 (2005) https://doi.org/10.1116/1.2052747

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Growth of $Ti O_{2}$ nanorods by two-step thermal evaporation

Jyh-Ming Wu; Han C. Shih; Wen-Ti Wu

J. Vac. Sci. Technol. B 23, 2122–2126 (2005) https://doi.org/10.1116/1.2038067

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Presence of nanosize Au dots on the formation of ohmic contact for the Ni–Au base film to $p$ -GaN

Jiin-Long Yang; J. S. Chen; S. J. Chang

J. Vac. Sci. Technol. B 23, 2127–2131 (2005) https://doi.org/10.1116/1.2041651

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Cap layer induced stress in $In As ∕ (Al) Ga As$ quantum dots

Shen-De Chen; Ying-Ying Chen; Si-Chen Lee

J. Vac. Sci. Technol. B 23, 2132–2136 (2005) https://doi.org/10.1116/1.2052710

Abstract

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Time dependence of wet oxidized $Al Ga As ∕ Ga As$ distributed Bragg reflectors

R. Y. Li; Z. G. Wang; B. Xu; P. Jin; X. Guo; M. Chen

J. Vac. Sci. Technol. B 23, 2137–2140 (2005) https://doi.org/10.1116/1.2050657

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Synthesis and characterization of one-dimensional ${WO}_{2}$ nanorods

Yuan-Ron Ma; Chi-Ming Lin; Chun-Liang Yeh; Rong-Tan Huang

J. Vac. Sci. Technol. B 23, 2141–2145 (2005) https://doi.org/10.1116/1.2050668

Abstract

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Influence of thermal budget on phosphosilicate glass prepared by high-density plasma chemical-vapor deposition

Wen-Chu Hsiao; Chuan-Pu Liu; Ying-Lang Wang

J. Vac. Sci. Technol. B 23, 2146–2150 (2005) https://doi.org/10.1116/1.2050670

Abstract

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Influence of process variables on electron beam chemical vapor deposition of platinum

D. Beaulieu; Yong Ding; Z. L. Wang; W. J. Lackey

J. Vac. Sci. Technol. B 23, 2151–2159 (2005) https://doi.org/10.1116/1.2050672

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Fundamental study of the removal mechanisms of nano-sized particles using brush scrubber cleaning

K. Xu; R. Vos; G. Vereecke; G. Doumen; W. Fyen; P. W. Mertens; M. M. Heyns; C. Vinckier; J. Fransaer; F. Kovacs

J. Vac. Sci. Technol. B 23, 2160–2175 (2005) https://doi.org/10.1116/1.2052713

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Errata

Erratum: “Effect of imprinting pressure on residual layer thickness in UV nano-imprint lithography” [J. Vac. Sci. Technol. B 23, 1102 (2005)]

Heon Lee

J. Vac. Sci. Technol. B 23, 2176 (2005) https://doi.org/10.1116/1.2013316

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Papers from the 6th AVS International Conference on Microelectronics and Interfaces

Fabrication and characterization of $InGaAlP ∕ InGaP$ semiconductor circular ring lasers

M. C. Shih; S. C. Wang; C. W. Liang

J. Vac. Sci. Technol. B 23, 2180–2183 (2005) https://doi.org/10.1116/1.2009772

Abstract

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Three-dimensional thin-film-transistor silicon-oxide-nitride-oxide-silicon memory cell formed on large grain sized polysilicon films using nuclei induced solid phase crystallization

S. Gu; S. V. Dunton; A. J. Walker; S. Nallamothu; E. H. Chen; M. Mahajani; S. B. Herner; V. L. Eckert; S. Hu; M. Konevecki; C. Petti; S. Radigan; U. Raghuram; M. A. Vyvoda

J. Vac. Sci. Technol. B 23, 2184–2188 (2005) https://doi.org/10.1116/1.2055327

Abstract

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Modified three terminal charge pumping technique applied to vertical transistor structures

L. J. Passmore; K. Sarpatwari; S. A. Suliman; O. O. Awadelkarim; R. Ridley; G. Dolny; J. Michalowicz; C. -T. Wu

J. Vac. Sci. Technol. B 23, 2189–2193 (2005) https://doi.org/10.1116/1.2040449

Abstract

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Influence of oxide hard mask on profiles of sub-100 nm Si and SiGe gates

Denis Shamiryan; Vasile Paraschiv; Sabrina Locorotondo; Stephan Beckx; Werner Boullart; Serge Vanhaelemeersch

J. Vac. Sci. Technol. B 23, 2194–2197 (2005) https://doi.org/10.1116/1.2019386

Abstract

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Minimizing plasma damage and in situ sealing of ultralow- $k$ dielectric films by using oxygen free fluorocarbon plasmas

G. Mannaert; M. R. Baklanov; Q. T. Le; Y. Travaly; W. Boullart; S. Vanhaelemeersch; A. M. Jonas

J. Vac. Sci. Technol. B 23, 2198–2202 (2005) https://doi.org/10.1116/1.1961910

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Effect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasma

D. H. Kim; C. H. Lee; S. H. Cho; N.-E. Lee; G. C. Kwon

J. Vac. Sci. Technol. B 23, 2203–2211 (2005) https://doi.org/10.1116/1.2009770

Abstract

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Modeling of radial uniformity at a wafer interface in a 2f-CCP for $Si O_{2}$ etching

T. Yagisawa; T. Shimada; T. Makabe

J. Vac. Sci. Technol. B 23, 2212–2217 (2005) https://doi.org/10.1116/1.2040447

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Modeling of the influence of dielectric target on interface sheath characteristics in a radio-frequency magnetron sputtering

Shunji Kuroiwa; Teruyuki Mine; Takashi Yagisawa; Toshiaki Makabe

J. Vac. Sci. Technol. B 23, 2218–2221 (2005) https://doi.org/10.1116/1.2009771

Abstract

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Reduction of the initial defect density and improvement of the reliability of Cu/low- $k$ structures by a methylating treatment

Swarnal Borthakur; Sri Satyanarayana; Andreas Knorr; Matthias Kraatz; Paul S. Ho

J. Vac. Sci. Technol. B 23, 2222–2225 (2005) https://doi.org/10.1116/1.1953708

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Control of sidewall slope in silicon vias using ${SF}_{6} ∕ O_{2}$ plasma etching in a conventional reactive ion etching tool

R. F. Figueroa; S. Spiesshoefer; S. L. Burkett; L. Schaper

J. Vac. Sci. Technol. B 23, 2226–2231 (2005) https://doi.org/10.1116/1.2041654

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Pressure dependent Parylene-N pore sealant penetration in porous low- $κ$ dielectrics

Jasbir S. Juneja; Gregory A. Ten Eyck; H. Bakhru; T.-M. Lu

J. Vac. Sci. Technol. B 23, 2232–2235 (2005) https://doi.org/10.1116/1.2040427

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Removal of chemical–mechanical polishing-induced damage layer in single crystal ${La}_{3} {Ga}_{5} Si O_{14}$ by inductively coupled plasma etching

Hyun Cho; S. J. Pearton

J. Vac. Sci. Technol. B 23, 2236–2239 (2005) https://doi.org/10.1116/1.1938971

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Silicon interface trap characterization with elastic metal gate metrology

Philip A. Kraus; Nhan Ho; Sang Ho Bae; Christopher S. Olsen

J. Vac. Sci. Technol. B 23, 2240–2243 (2005) https://doi.org/10.1116/1.2009769

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X-ray reflectometry and x-ray fluorescence monitoring of the atomic layer deposition process for high- $k$ gate dielectrics

P. Y. Hung; Carolyn Gondran; Amiya Ghatak-Roy; Shinichi Terada; Ben Bunday; Henry Yeung; Alain Diebold

J. Vac. Sci. Technol. B 23, 2244–2248 (2005) https://doi.org/10.1116/1.2009774

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Simultaneous optical measurement of Ge content and carbon doping in strained epitaxial SiGe films

S. Morris; D. Le Cunff; D. Ristoiu; V. Vachellerie; F. Deleglise; D. Dutartre

J. Vac. Sci. Technol. B 23, 2249–2253 (2005) https://doi.org/10.1116/1.2009775

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Letters

$120 - nm$ -T-shaped- $Mo ∕ Pt ∕ Au$ -gate $Al Ga N ∕ Ga N$ high electron mobility transistors

Yoshimi Yamashita; Akira Endoh; Keiji Ikeda; Kohki Hikosaka; Takashi Mimura; Masataka Higashiwaki; Toshiaki Matsui; Satoshi Hiyamizu

J. Vac. Sci. Technol. B 23, L13–L15 (2005) https://doi.org/10.1116/1.2013315

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