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REVIEW ARTICLE

Nanoscale measurements and manipulation

Richard J. Colton

J. Vac. Sci. Technol. B 22, 1609–1635 (2004) https://doi.org/10.1116/1.1760754

Abstract

View articletitled, Nanoscale measurements and manipulation

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REGULAR ARTICLES

High field-emission current of carbon nanotubes grown on TiN-coated Ta substrate for electron emitters in a microwave power amplifier

Jae-Hee Han; Tae Young Lee; Do Yoon Kim; Ji-Beom Yoo; Chong-Yun Park; Jin Ju Choi; Taewon Jung; In Taek Han; J. E. Jung; J. M. Kim

J. Vac. Sci. Technol. B 22, 1636–1642 (2004) https://doi.org/10.1116/1.1759345

Abstract

View articletitled, High field-emission current of carbon nanotubes grown on TiN-coated Ta substrate for electron emitters in a microwave power amplifier

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Emission characteristics of NbC/Nb field emitters

F. M. Charbonnier; L. A. Southall; W. A. Mackie

J. Vac. Sci. Technol. B 22, 1643–1652 (2004) https://doi.org/10.1116/1.1760753

Abstract

View articletitled, Emission characteristics of NbC/Nb field emitters

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Study of highly selective wet gate recess process for ${Al}_{0.25} {Ga}_{0.75} As/GaAs$ based pseudomorphic high electron mobility transistors

R. Khatri; K. Radhakrishnan

J. Vac. Sci. Technol. B 22, 1653–1657 (2004) https://doi.org/10.1116/1.1761216

Abstract

View articletitled, Study of highly selective wet gate recess process for <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>0.25</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.75</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As/GaAs</mi></math> based pseudomorphic high electron mobility transistors

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Nanomechanical structures with 91 MHz resonance frequency fabricated by local deposition and dry etching

G. M. Kim; S. Kawai; M. Nagashio; H. Kawakatsu; J. Brugger

J. Vac. Sci. Technol. B 22, 1658–1661 (2004) https://doi.org/10.1116/1.1761240

Abstract

View articletitled, Nanomechanical structures with 91 MHz resonance frequency fabricated by local deposition and dry etching

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Etching characteristics of platinum in inductively coupled plasma using ${Cl}_{2} / CO$

Jin Hong Kim; Ki Woong Kim; Seong Ihl Woo

J. Vac. Sci. Technol. B 22, 1662–1668 (2004) https://doi.org/10.1116/1.1761310

Abstract

View articletitled, Etching characteristics of platinum in inductively coupled plasma using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">CO</mi></math>

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Formation of silicon nanocrystals in ${SiO}_{2}$ by oxireduction reaction induced by impurity implantation and annealing

L. G. Jacobsohn; A. R. Zanatta; M. Nastasi

J. Vac. Sci. Technol. B 22, 1669–1671 (2004) https://doi.org/10.1116/1.1761410

Abstract

View articletitled, Formation of silicon nanocrystals in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> by oxireduction reaction induced by impurity implantation and annealing

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Fabrication of three-dimensional microstructures by two-dimensional slice by slice approaching via focused ion beam milling

Yongqi Fu; Ngoi Kok Ann Bryan

J. Vac. Sci. Technol. B 22, 1672–1678 (2004) https://doi.org/10.1116/1.1761460

Abstract

View articletitled, Fabrication of three-dimensional microstructures by two-dimensional slice by slice approaching via focused ion beam milling

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Multivariable control of multizone chemical mechanical polishing

Sheng-Jyh Shiu; Cheng-Ching Yu; Shih-Haur Shen

J. Vac. Sci. Technol. B 22, 1679–1687 (2004) https://doi.org/10.1116/1.1761483

Abstract

View articletitled, Multivariable control of multizone chemical mechanical polishing

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Observation and evaluation of flaked particle behavior in magnetically enhanced reactive ion etching equipment using a dipole ring magnet

Tsuyoshi Moriya; Hiroshi Nagaike; Kazuki Denpoh; Tamotsu Morimoto; Masaru Aomori; Shinichi Kawaguchi; Manabu Shimada; Kikuo Okuyama

J. Vac. Sci. Technol. B 22, 1688–1693 (2004) https://doi.org/10.1116/1.1763592

Abstract

View articletitled, Observation and evaluation of flaked particle behavior in magnetically enhanced reactive ion etching equipment using a dipole ring magnet

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Structural characterization of nanocomposite Ti–Si–N coatings prepared by pulsed dc plasma-enhanced chemical vapor deposition

Shengli Ma; Dayan Ma; Kewei Xu; Wanqi Jie

J. Vac. Sci. Technol. B 22, 1694–1698 (2004) https://doi.org/10.1116/1.1763593

Abstract

View articletitled, Structural characterization of nanocomposite Ti–Si–N coatings prepared by pulsed dc plasma-enhanced chemical vapor deposition

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Comprehensive study of ${InGaP–Al}_{x} {Ga}_{1−x} As–GaAs$ composite-emitter heterojunction bipolar transistors with different thickness of ${Al}_{x} {Ga}_{1−x} As$ graded layers

Shiou-Ying Cheng; Chun-Yuan Chen; Jing-Yuh Chen; Hung-Ming Chuang; Chih-Hung Yen; Wen-Chau Liu

J. Vac. Sci. Technol. B 22, 1699–1704 (2004) https://doi.org/10.1116/1.1763890

Abstract

View articletitled, Comprehensive study of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">InGaP–Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As–GaAs</mi></math> composite-emitter heterojunction bipolar transistors with different thickness of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> graded layers

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Solid-phase reaction and Schottky contact properties of $Co/ n- {poly-Si}_{0.84} {Ge}_{0.16} / n- Si$ (100)

Guang-Wei Wang; Guo-Ping Ru; Xin-Ping Qu; Bing-Zong Li

J. Vac. Sci. Technol. B 22, 1705–1710 (2004) https://doi.org/10.1116/1.1763895

Abstract

View articletitled, Solid-phase reaction and Schottky contact properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Co/</mi><mi xmlns="">n-</mi><msub xmlns=""><mi mathvariant="normal">poly-Si</mi><mrow><mtext>0.84</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi mathvariant="normal">0.16</mi></mrow></msub><mi mathvariant="normal" xmlns="">/</mi><mi xmlns="">n-</mi><mi mathvariant="normal" xmlns="">Si</mi></math> (100)

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Sub-10 nm electron beam lithography using cold development of poly(methylmethacrylate)

Wenchuang (Walter) Hu; Koshala Sarveswaran; Marya Lieberman; Gary H. Bernstein

J. Vac. Sci. Technol. B 22, 1711–1716 (2004) https://doi.org/10.1116/1.1763897

Abstract

View articletitled, Sub-10 nm electron beam lithography using cold development of poly(methylmethacrylate)

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Study of structural and microstructural properties of AlN films deposited on silicon and quartz substrates for surface acoustic wave devices

M. B. Assouar; O. Elmazria; M. Elhakiki; P. Alnot

J. Vac. Sci. Technol. B 22, 1717–1722 (2004) https://doi.org/10.1116/1.1767196

Abstract

View articletitled, Study of structural and microstructural properties of AlN films deposited on silicon and quartz substrates for surface acoustic wave devices

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Single step electron-beam lithography for asymmetric recess and gamma gate in high electron mobility transistor fabrication

Cheng Kuo Lin; Wen-Kai Wang; Ming-Jyh Hwu; Yi-Jen Chan

J. Vac. Sci. Technol. B 22, 1723–1726 (2004) https://doi.org/10.1116/1.1767824

Abstract

View articletitled, Single step electron-beam lithography for asymmetric recess and gamma gate in high electron mobility transistor fabrication

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Si diffusion in $p- GaN$

C. J. Pan; G. C. Chi; B. J. Pong; J. K. Sheu; J. Y. Chen

J. Vac. Sci. Technol. B 22, 1727–1730 (2004) https://doi.org/10.1116/1.1767826

Abstract

View articletitled, Si diffusion in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-</mi><mi mathvariant="normal" xmlns="">GaN</mi></math>

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Laser annealing of silicon nanocrystal films prepared by pulsed-laser deposition

X. Y. Chen; Y. F. Lu; Y. H. Wu; B. J. Cho; B. J. Yang; T. Y. F. Liew

J. Vac. Sci. Technol. B 22, 1731–1737 (2004) https://doi.org/10.1116/1.1767829

Abstract

View articletitled, Laser annealing of silicon nanocrystal films prepared by pulsed-laser deposition

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Quantitative analysis of deuterium and tritium in erbium hydride films of neutron tube targets

H. T. Bach; F. J. Steinkruger; W. S. Chamberlin; C. R. Walthers

J. Vac. Sci. Technol. B 22, 1738–1745 (2004) https://doi.org/10.1116/1.1763894

Abstract

View articletitled, Quantitative analysis of deuterium and tritium in erbium hydride films of neutron tube targets

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Mn and Be codoped GaAs for high hole concentration by low-temperature migration-enhanced epitaxy

Koji Onomitsu; Hideo Fukui; Takashi Maeda; Yoshiro Hirayama; Yoshiji Horikoshi

J. Vac. Sci. Technol. B 22, 1746–1749 (2004) https://doi.org/10.1116/1.1767197

Abstract

View articletitled, Mn and Be codoped GaAs for high hole concentration by low-temperature migration-enhanced epitaxy

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Etch rate and surface morphology control in photoelectrochemical etching of GaN

Bo Yang; Patrick Fay

J. Vac. Sci. Technol. B 22, 1750–1754 (2004) https://doi.org/10.1116/1.1767828

Abstract

View articletitled, Etch rate and surface morphology control in photoelectrochemical etching of GaN

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Structural and electrical properties of ${HfO}_{x} N_{y}$ and ${HfO}_{2}$ gate dielectrics in TaN gated nMOSCAP and nMOSFET devices

Kyu-Jeong Choi; Jeon-Ho Kim; Soon-Gil Yoon; Woong-Chul Shin

J. Vac. Sci. Technol. B 22, 1755–1758 (2004) https://doi.org/10.1116/1.1771664

Abstract

View articletitled, Structural and electrical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>y</mi></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub></math> gate dielectrics in TaN gated nMOSCAP and nMOSFET devices

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Rigid organic molds for nanoimprint lithography by replica molding of high glass transition temperature polymers

Dario Pisignano; Stefania D’Amone; Giuseppe Gigli; Roberto Cingolani

J. Vac. Sci. Technol. B 22, 1759–1763 (2004) https://doi.org/10.1116/1.1767108

Abstract

View articletitled, Rigid organic molds for nanoimprint lithography by replica molding of high glass transition temperature polymers

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Soft lithography molding of polymer integrated optical devices: Reduction of the background residue

George T. Paloczi; Yanyi Huang; Jacob Scheuer; Amnon Yariv

J. Vac. Sci. Technol. B 22, 1764–1769 (2004) https://doi.org/10.1116/1.1767827

Abstract

View articletitled, Soft lithography molding of polymer integrated optical devices: Reduction of the background residue

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Nanoimprint lithography in the cyclic olefin copolymer, ${Topas}^{®},$ a highly ultraviolet-transparent and chemically resistant thermoplast

T. Nielsen; D. Nilsson; F. Bundgaard; P. Shi; P. Szabo; O. Geschke; A. Kristensen

J. Vac. Sci. Technol. B 22, 1770–1775 (2004) https://doi.org/10.1116/1.1771665

Abstract

View articletitled, Nanoimprint lithography in the cyclic olefin copolymer, <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Topas</mi><mrow><mi>®</mi></mrow></msup><mi xmlns="">,</mi></math> a highly ultraviolet-transparent and chemically resistant thermoplast

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High mobility SiGe/Si transistor structures on sapphire substrates using ion implantation

S. A. Alterovitz; C. H. Mueller; E. T. Croke

J. Vac. Sci. Technol. B 22, 1776–1783 (2004) https://doi.org/10.1116/1.1763891

Abstract

View articletitled, High mobility SiGe/Si transistor structures on sapphire substrates using ion implantation

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Annealing effects on the operation stability of ballistic electron emission from electrochemically oxidized nanocrystalline silicon diodes

Tsutomu Ichihara; Yoshiaki Honda; Toru Baba; Takuya Komoda; Nobuyoshi Koshida

J. Vac. Sci. Technol. B 22, 1784–1787 (2004) https://doi.org/10.1116/1.1763893

Abstract

View articletitled, Annealing effects on the operation stability of ballistic electron emission from electrochemically oxidized nanocrystalline silicon diodes

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High-aspect-ratio chemically assisted ion-beam etching for photonic crystals using a high beam voltage-current ratio

M. V. Kotlyar; L. O’Faolain; R. Wilson; T. F. Krauss

J. Vac. Sci. Technol. B 22, 1788–1791 (2004) https://doi.org/10.1116/1.1767106

Abstract

View articletitled, High-aspect-ratio chemically assisted ion-beam etching for photonic crystals using a high beam voltage-current ratio

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Optimization of post- $N_{2}$ treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application

Yi-Lung Cheng; Ying-Lang Wang; Jin-Kun Lan; Sze-Au Wu; Shih-Chieh Chang; Kuang-Yao Lo; Ming-Shiann Feng

J. Vac. Sci. Technol. B 22, 1792–1796 (2004) https://doi.org/10.1116/1.1767107

Abstract

View articletitled, Optimization of post-<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>2</mn></mrow></msub></math> treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application

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In situ nanoscale observation and control of electron-beam-induced cluster formation

R. Adelung; F. Ernst; N. Zheng; U. Landau

J. Vac. Sci. Technol. B 22, 1797–1802 (2004) https://doi.org/10.1116/1.1767830

Abstract

View articletitled, In situ nanoscale observation and control of electron-beam-induced cluster formation

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Electron-beam induced initial growth of platinum films using ${Pt(PF}_{3})_{4}$

S. Wang; Y.-M. Sun; Q. Wang; J. M. White

J. Vac. Sci. Technol. B 22, 1803–1806 (2004) https://doi.org/10.1116/1.1761266

Abstract

View articletitled, Electron-beam induced initial growth of platinum films using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pt(PF</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mn>4</mn></mrow></msub></math>

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50 nm InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors using double exposure at 50 kV electron-beam lithography without dielectric support

S. C. Kim; O. K. Lim; H. S. Lee; T. J. Baek; D.-H. Shin; J. K. Rhee

J. Vac. Sci. Technol. B 22, 1807–1810 (2004) https://doi.org/10.1116/1.1763892

Abstract

View articletitled, 50 nm InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors using double exposure at 50 kV electron-beam lithography without dielectric support

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Gas phase reaction products during tungsten atomic layer deposition using ${WF}_{6}$ and ${Si}_{2} H_{6}$

R. K. Grubbs; N. J. Steinmetz; S. M. George

J. Vac. Sci. Technol. B 22, 1811–1821 (2004) https://doi.org/10.1116/1.1767105

Abstract

View articletitled, Gas phase reaction products during tungsten atomic layer deposition using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WF</mi><mrow><mn>6</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>6</mn></mrow></msub></math>

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Real time spectroscopic ellipsometry study during the growth of nanocrystalline nitride protective coatings

S. M. Aouadi; M. Debessai; R. Tomek; T. Maeruf

J. Vac. Sci. Technol. B 22, 1822–1829 (2004) https://doi.org/10.1116/1.1771662

Abstract

View articletitled, Real time spectroscopic ellipsometry study during the growth of nanocrystalline nitride protective coatings

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Surface and grain boundary scattering studied in beveled polycrystalline thin copper films

W. Zhang; S. H. Brongersma; T. Clarysse; V. Terzieva; E. Rosseel; W. Vandervorst; K. Maex

J. Vac. Sci. Technol. B 22, 1830–1833 (2004) https://doi.org/10.1116/1.1771666

Abstract

View articletitled, Surface and grain boundary scattering studied in beveled polycrystalline thin copper films

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Low-temperature growth of carbon nanotube by thermal chemical vapor deposition with FeZrN catalyst

Tetsuya Shiroishi; Takao Sawada; Akihiko Hosono; Shuhei Nakata; Yasunori Kanazawa; Mikio Takai

J. Vac. Sci. Technol. B 22, 1834–1837 (2004) https://doi.org/10.1116/1.1772368

Abstract

View articletitled, Low-temperature growth of carbon nanotube by thermal chemical vapor deposition with FeZrN catalyst

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Nitrogen incorporation engineering and electrical properties of high- $k$ gate dielectric $({HfO}_{2}$ and ${Al}_{2} O_{3})$ films on Si (100) substrate

Chihoon Lee; Jihoon Choi; Moonju Cho; Jahoo Park; Cheol Seong Hwang; Hyeong Joon Kim; Jaehack Jeong

J. Vac. Sci. Technol. B 22, 1838–1843 (2004) https://doi.org/10.1116/1.1775203

Abstract

View articletitled, Nitrogen incorporation engineering and electrical properties of high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> gate dielectric <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">)</mi></math> films on Si (100) substrate

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Bias-temperature stressing analysis on the stability of an ultrathin Ta diffusion barrier

Boon Kiat Lim; Hun Sub Park; Lian Kon Chin; Sun Woong Woo; Alex K. H. See; Chim Seng Seet; Tae-Jong Lee; Nikolai L. Yakovlev

J. Vac. Sci. Technol. B 22, 1844–1850 (2004) https://doi.org/10.1116/1.1776562

Abstract

View articletitled, Bias-temperature stressing analysis on the stability of an ultrathin Ta diffusion barrier

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High-brightness GaN-based light-emitting diode with indium tin oxide based transparent ohmic contact

Soo Young Kim; Ho Won Jang; Jong-Lam Lee

J. Vac. Sci. Technol. B 22, 1851–1857 (2004) https://doi.org/10.1116/1.1761435

Abstract

View articletitled, High-brightness GaN-based light-emitting diode with indium tin oxide based transparent ohmic contact

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Resist-pattern transformation studied by x-ray photoelectron spectroscopy after exposure to reactive plasmas. I. Methodology and examples

E. Pargon; O. Joubert; N. Posseme; L. Vallier

J. Vac. Sci. Technol. B 22, 1858–1868 (2004) https://doi.org/10.1116/1.1767037

Abstract

View articletitled, Resist-pattern transformation studied by x-ray photoelectron spectroscopy after exposure to reactive plasmas. I. Methodology and examples

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Characterization of resist-trimming processes by quasi in situ x-ray photoelectron spectroscopy

E. Pargon; O. Joubert; Songlin Xu; Thorsten Lill

J. Vac. Sci. Technol. B 22, 1869–1879 (2004) https://doi.org/10.1116/1.1767038

Abstract

View articletitled, Characterization of resist-trimming processes by quasi in situ x-ray photoelectron spectroscopy

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Real-time microscopic observation of emission fluctuation on Mo-tip field emitter array caused by introduced gas

K. Minami; K. Yamane; H. Nakane; H. Adachi

J. Vac. Sci. Technol. B 22, 1880–1884 (2004) https://doi.org/10.1116/1.1773843

Abstract

View articletitled, Real-time microscopic observation of emission fluctuation on Mo-tip field emitter array caused by introduced gas

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Wet chemical cleaning of plasma oxide grown on heated (001) InP surfaces

B. Lita; O. Pluchery; R. L. Opila; Y. J. Chabal; G. Bunea; J. P. Holman; E. J. Bekos

J. Vac. Sci. Technol. B 22, 1885–1892 (2004) https://doi.org/10.1116/1.1774202

Abstract

View articletitled, Wet chemical cleaning of plasma oxide grown on heated (001) InP surfaces

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Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates

A. Wan; V. Menon; S. R. Forrest; D. Wasserman; S. A. Lyon; A. Kahn

J. Vac. Sci. Technol. B 22, 1893–1898 (2004) https://doi.org/10.1116/1.1774203

Abstract

View articletitled, Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates

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Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering

L. M. McGill; E. A. Fitzgerald; A. Y. Kim; J.-W. Huang; S. S. Yi; P. N. Grillot; S. A. Stockman

J. Vac. Sci. Technol. B 22, 1899–1911 (2004) https://doi.org/10.1116/1.1775003

Abstract

View articletitled, Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering

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Topographic and kinetic effects of the ${SF}_{6} / O_{2}$ rate during a cryogenic etching process of silicon

G. Marcos; A. Rhallabi; P. Ranson

J. Vac. Sci. Technol. B 22, 1912–1922 (2004) https://doi.org/10.1116/1.1767825

Abstract

View articletitled, Topographic and kinetic effects of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SF</mi><mrow><mn>6</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub></math> rate during a cryogenic etching process of silicon

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Generation of nano-sized free standing single crystal silicon particles

Y. Dong; A. Bapat; S. Hilchie; U. Kortshagen; S. A. Campbell

J. Vac. Sci. Technol. B 22, 1923–1930 (2004) https://doi.org/10.1116/1.1771667

Abstract

View articletitled, Generation of nano-sized free standing single crystal silicon particles

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Chemical vapor deposition–physical vapor deposition aluminum plug process for dynamic random-access memory applications

Won-Jun Lee; Sa-Kyun Rha

J. Vac. Sci. Technol. B 22, 1931–1934 (2004) https://doi.org/10.1116/1.1775005

Abstract

View articletitled, Chemical vapor deposition–physical vapor deposition aluminum plug process for dynamic random-access memory applications

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Self-assembling growth of $(Ba,Sr) {TiO}_{3}$ epitaxial thin films

Yanrong Li; Jinlong Li; Ying Zhang; Xinwu Deng; Xingzhao Liu; Bowan Tao

J. Vac. Sci. Technol. B 22, 1935–1939 (2004) https://doi.org/10.1116/1.1775006

Abstract

View articletitled, Self-assembling growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">Ba,Sr</mi><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>3</mn></mrow></msub></math> epitaxial thin films

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Thickness dependence of structural and electrical characteristics of ${ZrO}_{2}$ thin films as grown on Si by chemical-vapor deposition

Shih-Sian Huang; Tai-Bor Wu

J. Vac. Sci. Technol. B 22, 1940–1948 (2004) https://doi.org/10.1116/1.1776560

Abstract

View articletitled, Thickness dependence of structural and electrical characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub></math> thin films as grown on Si by chemical-vapor deposition

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Nanoscale two-dimensional patterning on Si(001) by large-area interferometric lithography and anisotropic wet etching

S. C. Lee; S. R. J. Brueck

J. Vac. Sci. Technol. B 22, 1949–1952 (2004) https://doi.org/10.1116/1.1771663

Abstract

View articletitled, Nanoscale two-dimensional patterning on Si(001) by large-area interferometric lithography and anisotropic wet etching

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Effect of sidewall roughness on the bottom etch properties of an ${SiO}_{2}$ trench produced in a ${CF}_{4}$ plasma

Sung-Wook Hwang; Gyeo-Re Lee; Jae-Ho Min; Sang Heup Moon

J. Vac. Sci. Technol. B 22, 1953–1957 (2004) https://doi.org/10.1116/1.1774201

Abstract

View articletitled, Effect of sidewall roughness on the bottom etch properties of an <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> trench produced in a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>4</mn></mrow></msub></math> plasma

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Field emission characteristics of BN nanofilms grown on GaN substrates

Haitao Luo; Shingo Funakawa; Wenzhong Shen; Takashi Sugino

J. Vac. Sci. Technol. B 22, 1958–1963 (2004) https://doi.org/10.1116/1.1773845

Abstract

View articletitled, Field emission characteristics of BN nanofilms grown on GaN substrates

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Structuring of GaAs. I. Chemical dry etching: Temperature and chlorine pressure dependence of etch rates

Jens Dienelt; Justus von Sonntag; Klaus Zimmer; Bernd Rauschenbach

J. Vac. Sci. Technol. B 22, 1964–1969 (2004) https://doi.org/10.1116/1.1775002

Abstract

View articletitled, Structuring of GaAs. I. Chemical dry etching: Temperature and chlorine pressure dependence of etch rates

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Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers

Chun-Yuan Huang; Meng-Chyi Wu; Hsin-Chieh Yu; Wen-Jang Jiang; Jin-Mei Wang; Chia-Pin Sung

J. Vac. Sci. Technol. B 22, 1970–1973 (2004) https://doi.org/10.1116/1.1775004

Abstract

View articletitled, Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers

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Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions

V. Constantoudis; G. P. Patsis; L. H. A. Leunissen; E. Gogolides

J. Vac. Sci. Technol. B 22, 1974–1981 (2004) https://doi.org/10.1116/1.1776561

Abstract

View articletitled, Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions

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BRIEF REPORTS AND COMMENTS

Comparison of a new photoresist (DiaPlate 133) with SU-8 using both x-ray and ion beam lithographies

Yvan Gonin; Frans Munnik; Frédéric Benninger; Francisco Dias; Sergueı̈ Mikhaı̈lov

J. Vac. Sci. Technol. B 22, 1982–1986 (2004) https://doi.org/10.1116/1.1763896

Abstract

View articletitled, Comparison of a new photoresist (DiaPlate 133) with SU-8 using both x-ray and ion beam lithographies

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Papers from the 31st Conference on the Physics and Chemistry of Semiconductor Interfaces

Nanostructures

Carbon nanotube networks: Nanomaterial for macroelectronic applications

E. S. Snow; J. P. Novak; M. D. Lay; E. H. Houser; F. K. Perkins; P. M. Campbell

J. Vac. Sci. Technol. B 22, 1990–1994 (2004) https://doi.org/10.1116/1.1768185

Abstract

View articletitled, Carbon nanotube networks: Nanomaterial for macroelectronic applications

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Charge writing on the nanoscale: From nanopatterning to molecular docking

S. P. Wilks; T. G. G. Maffeïs; G. T. Owen; K. S. Teng; M. W. Penny; H. Ferkel

J. Vac. Sci. Technol. B 22, 1995–1999 (2004) https://doi.org/10.1116/1.1775189

Abstract

View articletitled, Charge writing on the nanoscale: From nanopatterning to molecular docking

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Near-edge absorption fine structure and UV photoemission spectroscopy studies of aligned single-walled carbon nanotubes on Si(100) substrates

L. Fleming; M. D. Ulrich; K. Efimenko; J. Genzer; A. S. Y. Chan; T. E. Madey; S.-J. Oh; O. Zhou; J. E. Rowe

J. Vac. Sci. Technol. B 22, 2000–2004 (2004) https://doi.org/10.1116/1.1775190

Abstract

View articletitled, Near-edge absorption fine structure and UV photoemission spectroscopy studies of aligned single-walled carbon nanotubes on Si(100) substrates

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Atomic resolution scanning tunneling microscope study of single-walled carbon nanotubes on GaAs(110)

L. B. Ruppalt; P. M. Albrecht; J. W. Lyding

J. Vac. Sci. Technol. B 22, 2005–2007 (2004) https://doi.org/10.1116/1.1768192

Abstract

View articletitled, Atomic resolution scanning tunneling microscope study of single-walled carbon nanotubes on GaAs(110)

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Metallic nanostructures on Co/GaAs(001)(4×2) surfaces

K. Lüdge; P. Vogt; W. Richter; B.-O. Fimland; W. Braun; N. Esser

J. Vac. Sci. Technol. B 22, 2008–2013 (2004) https://doi.org/10.1116/1.1775187

Abstract

View articletitled, Metallic nanostructures on Co/GaAs(001)(4×2) surfaces

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Impurity-induced disordering in AlGaInP superlattices studied using cross-sectional scanning tunneling microscopy

K. S. Teng; M. R. Brown; S. P. Wilks; A. Sobiesierski; P. M. Smowton; P. Blood

J. Vac. Sci. Technol. B 22, 2014–2017 (2004) https://doi.org/10.1116/1.1768187

Abstract

View articletitled, Impurity-induced disordering in AlGaInP superlattices studied using cross-sectional scanning tunneling microscopy

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Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces

Ph. Ebert; N. D. Jäger; K. Urban; E. R. Weber

J. Vac. Sci. Technol. B 22, 2018–2025 (2004) https://doi.org/10.1116/1.1771680

Abstract

View articletitled, Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces

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Atomic scale friction of nanoscale clusters

Keita Ohno; Toshihiro Nitta; Jun Nakamura; Akiko Natori

J. Vac. Sci. Technol. B 22, 2026–2029 (2004) https://doi.org/10.1116/1.1771681

Abstract

View articletitled, Atomic scale friction of nanoscale clusters

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Transport

Nanoscale current transport in epitaxial ${SrTiO}_{3}$ on $n^{+} - Si$ investigated with conductive atomic force microscopy

D. M. Schaadt; E. T. Yu; V. Vaithyanathan; D. G. Schlom

J. Vac. Sci. Technol. B 22, 2030–2034 (2004) https://doi.org/10.1116/1.1768529

Abstract

View articletitled, Nanoscale current transport in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> on <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>n</mi><mrow><mi>+</mi></mrow></msup><mi xmlns="">-</mi><mi mathvariant="normal" xmlns="">Si</mi></math> investigated with conductive atomic force microscopy

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Controlled decoherence of a charge qubit in a double quantum dot

Toshimasa Fujisawa; Toshiaki Hayashi; Yoshiro Hirayama

J. Vac. Sci. Technol. B 22, 2035–2038 (2004) https://doi.org/10.1116/1.1771679

Abstract

View articletitled, Controlled decoherence of a charge qubit in a double quantum dot

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Resonant tunneling behavior and discrete dopant effects in narrow ultrashort ballistic silicon-on-insulator metal-oxide-semiconductor field-effect transistors

M. J. Gilbert; D. K. Ferry

J. Vac. Sci. Technol. B 22, 2039–2044 (2004) https://doi.org/10.1116/1.1775195

Abstract

View articletitled, Resonant tunneling behavior and discrete dopant effects in narrow ultrashort ballistic silicon-on-insulator metal-oxide-semiconductor field-effect transistors

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High field transport in GaN/AlGaN heterostructures

J. M. Barker; D. K. Ferry; S. M. Goodnick; D. D. Koleske; A. Allerman; R. J. Shul

J. Vac. Sci. Technol. B 22, 2045–2050 (2004) https://doi.org/10.1116/1.1775199

Abstract

View articletitled, High field transport in GaN/AlGaN heterostructures

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Interpretation of current transport properties at $Ni /n– GaN$ Schottky interfaces

T. Sawada; N. Kimura; K. Imai; K. Suzuki; K. Tanahashi

J. Vac. Sci. Technol. B 22, 2051–2058 (2004) https://doi.org/10.1116/1.1768189

Abstract

View articletitled, Interpretation of current transport properties at <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Ni</mi><mi xmlns="">/n–</mi><mi mathvariant="normal" xmlns="">GaN</mi></math> Schottky interfaces

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Power loss measurements in quasi-1D and quasi-2D systems in an ${In}_{0.52} {Al}_{0.48} {As/In}_{0.53} {Ga}_{0.47} {As/In}_{0.52} {Al}_{0.48} As$ heterostructure

C. Prasad; D. K. Ferry; H. H. Wieder

J. Vac. Sci. Technol. B 22, 2059–2062 (2004) https://doi.org/10.1116/1.1768193

Abstract

View articletitled, Power loss measurements in quasi-1D and quasi-2D systems in an <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.52</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">0.48</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">As/In</mi><mrow><mi mathvariant="normal">0.53</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.47</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">As/In</mi><mrow><mi mathvariant="normal">0.52</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">0.48</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> heterostructure

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Interface recombination velocity measurement by a contactless microwave technique

R. K. Ahrenkiel; J. Dashdorj

J. Vac. Sci. Technol. B 22, 2063–2067 (2004) https://doi.org/10.1116/1.1768523

Abstract

View articletitled, Interface recombination velocity measurement by a contactless microwave technique

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Magnetic Materials, Spintronics, and Schottky Barriers

Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)

Z. Ding; P. M. Thibado; C. Awo-Affouda; V. P. LaBella

J. Vac. Sci. Technol. B 22, 2068–2072 (2004) https://doi.org/10.1116/1.1771674

Abstract

View articletitled, Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)

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Structural and magnetic properties of epitaxial ${Fe}_{3} Si/GaAs (001)$ hybrid structures

J. Herfort; H.-P. Schönherr; K.-J. Friedland; K. H. Ploog

J. Vac. Sci. Technol. B 22, 2073–2078 (2004) https://doi.org/10.1116/1.1768528

Abstract

View articletitled, Structural and magnetic properties of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>3</mn></mrow></msub><mi mathvariant="normal" xmlns="">Si/GaAs</mi><mtext xmlns="">(001)</mtext></math> hybrid structures

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In situ investigation of MnAs/GaAs(001) growth and interface structure using synchrotron x-ray diffraction

D. K. Satapathy; B. Jenichen; V. M. Kaganer; W. Braun; L. Däweritz; K. H. Ploog

J. Vac. Sci. Technol. B 22, 2079–2083 (2004) https://doi.org/10.1116/1.1775200

Abstract

View articletitled, In situ investigation of MnAs/GaAs(001) growth and interface structure using synchrotron x-ray diffraction

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Schottky junction properties on high quality boron-doped homoepitaxial diamond thin films

Y. G. Chen; M. Ogura; H. Okushi

J. Vac. Sci. Technol. B 22, 2084–2086 (2004) https://doi.org/10.1116/1.1768186

Abstract

View articletitled, Schottky junction properties on high quality boron-doped homoepitaxial diamond thin films

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Si-Dielectric Interfaces; Gate Oxides

Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the ${Si–SiO}_{2}$ interface

G. Lucovsky; J. C. Phillips

J. Vac. Sci. Technol. B 22, 2087–2096 (2004) https://doi.org/10.1116/1.1771676

Abstract

View articletitled, Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si–SiO</mi><mrow><mn>2</mn></mrow></msub></math> interface

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Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between ${SiO}_{2}$ and alternative gate dielectrics

G. Lucovsky; J. P. Maria; J. C. Phillips

J. Vac. Sci. Technol. B 22, 2097–2104 (2004) https://doi.org/10.1116/1.1771675

Abstract

View articletitled, Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> and alternative gate dielectrics

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Interfacial properties of ultra thin ${Zr}_{x} {Si}_{1−x} O_{2}$ with compositional gradation grown on Si(100) using ${Zr[N(C}_{2} H_{5})_{2}]_{4}$ and ${Si(OC}_{4} H_{9})_{4}$

Jaehyun Kim; Kijung Yong

J. Vac. Sci. Technol. B 22, 2105–2109 (2004) https://doi.org/10.1116/1.1768524

Abstract

View articletitled, Interfacial properties of ultra thin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub></math> with compositional gradation grown on Si(100) using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zr[N(C</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>5</mn></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi>]</mi><mrow><mn>4</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si(OC</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>9</mn></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mn>4</mn></mrow></msub></math>

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Treatment of interface roughness in SOI-MESFETs

T. Khan; D. Vasileska; T. J. Thornton

J. Vac. Sci. Technol. B 22, 2110–2112 (2004) https://doi.org/10.1116/1.1768194

Abstract

View articletitled, Treatment of interface roughness in SOI-MESFETs

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Surface potential and morphology issues of annealed $({HfO}_{2})_{x} ({SiO}_{2})_{1−x}$ gate oxides

R. Ludeke; P. Lysaght; E. Cartier; E. Gusev; M. Chudzik; B. Foran; G. Bersuker

J. Vac. Sci. Technol. B 22, 2113–2120 (2004) https://doi.org/10.1116/1.1771673

Abstract

View articletitled, Surface potential and morphology issues of annealed <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mtext>1−x</mtext></mrow></msub></math> gate oxides

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Film properties of ALD ${HfO}_{2}$ and ${La}_{2} O_{3}$ gate dielectrics grown on Si with various pre-deposition treatments

D. H. Triyoso; R. I. Hegde; J. Grant; P. Fejes; R. Liu; D. Roan; M. Ramon; D. Werho; R. Rai; L. B. La; J. Baker; C. Garza; T. Guenther; B. E. White, Jr.; P. J. Tobin

J. Vac. Sci. Technol. B 22, 2121–2127 (2004) https://doi.org/10.1116/1.1773840

Abstract

View articletitled, Film properties of ALD <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> gate dielectrics grown on Si with various pre-deposition treatments

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Roles of nitrogen incorporation in ${HfAlO}_{x} (N)$ gate dielectrics for suppression of boron penetration

Toshihide Nabatame; Kunihiko Iwamoto; Katsuhiko Yamamoto; Koji Tominaga; Hirokazu Hisamatsu; Morifumi Ohno; Koji Akiyama; Minoru Ikeda; Tomoaki Nishimura; Hiroyuki Ota; Tsuyoshi Horikawa; Akira Toriumi

J. Vac. Sci. Technol. B 22, 2128–2131 (2004) https://doi.org/10.1116/1.1768526

Abstract

View articletitled, Roles of nitrogen incorporation in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfAlO</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">N</mi><mi xmlns="">)</mi></math> gate dielectrics for suppression of boron penetration

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X-ray absorption spectra for transition metal high-κ dielectrics: Final state differences for intra- and inter-atomic transitions

G. Lucovsky; J. G. Hong; C. C. Fulton; Y. Zou; R. J. Nemanich; H. Ade

J. Vac. Sci. Technol. B 22, 2132–2138 (2004) https://doi.org/10.1116/1.1771670

Abstract

View articletitled, X-ray absorption spectra for transition metal high-κ dielectrics: Final state differences for intra- and inter-atomic transitions

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GaN and Related Materials

Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001) sapphire and their properties

T. Araki; Y. Saito; T. Yamaguchi; M. Kurouchi; Y. Nanishi; H. Naoi

J. Vac. Sci. Technol. B 22, 2139–2143 (2004) https://doi.org/10.1116/1.1771682

Abstract

View articletitled, Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001) sapphire and their properties

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Growth of single crystalline GaN thin films on Si(111) substrates by high vacuum metalorganic chemical vapor deposition using a single molecular precursor

Sang Hun Lee; Jin-Hyo Boo; Sung Yong Lee; Seung Ho Yoo; Chang Gyoun Kim; Young Kuk Lee; Yunsoo Kim

J. Vac. Sci. Technol. B 22, 2144–2148 (2004) https://doi.org/10.1116/1.1775193

Abstract

View articletitled, Growth of single crystalline GaN thin films on Si(111) substrates by high vacuum metalorganic chemical vapor deposition using a single molecular precursor

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High temperature limitations for GaN growth by rf-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, hydrogen, and excess Ga-overpressure

B. L. VanMil; Huicheng Guo; L. J. Holbert; Kyoungnae Lee; T. H. Myers; Ting Liu; D. Korakakis

J. Vac. Sci. Technol. B 22, 2149–2154 (2004) https://doi.org/10.1116/1.1768531

Abstract

View articletitled, High temperature limitations for GaN growth by rf-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, hydrogen, and excess Ga-overpressure

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Low-temperature growth of GaN layers on (0001)6H–SiC by compound source molecular beam epitaxy

Tohru Honda; Masaki Hama; Yohta Aoki; Miwako Akiyama; Naoyuki Obinata; Hideo Kawanishi

J. Vac. Sci. Technol. B 22, 2155–2157 (2004) https://doi.org/10.1116/1.1771677

Abstract

View articletitled, Low-temperature growth of GaN layers on (0001)6H–SiC by compound source molecular beam epitaxy

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Improved surface morphology in GaN homoepitaxy by ${NH}_{3}$ -source molecular-beam epitaxy

T. Koida; Y. Uchinuma; J. Kikuchi; K. R. Wang; M. Terazaki; T. Onuma; J. F. Keading; R. Sharma; S. Nakamura; S. F. Chichibu

J. Vac. Sci. Technol. B 22, 2158–2164 (2004) https://doi.org/10.1116/1.1775202

Abstract

View articletitled, Improved surface morphology in GaN homoepitaxy by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NH</mi><mrow><mn>3</mn></mrow></msub></math>-source molecular-beam epitaxy

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Characterization of metalorganic chemical vapor deposition growth of cubic GaN by in situ x-ray diffraction

Klaus Schmidegg; Alexander Kharchenko; Alberta Bonanni; Helmut Sitter; Johannes Bethke; Klaus Lischka

J. Vac. Sci. Technol. B 22, 2165–2168 (2004) https://doi.org/10.1116/1.1768191

Abstract

View articletitled, Characterization of metalorganic chemical vapor deposition growth of cubic GaN by in situ x-ray diffraction

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Analysis of interface electronic structure in ${In}_{x} {Ga}_{1−x} N/GaN$ heterostructures

H. Zhang; E. J. Miller; E. T. Yu; C. Poblenz; J. S. Speck

J. Vac. Sci. Technol. B 22, 2169–2174 (2004) https://doi.org/10.1116/1.1768190

Abstract

View articletitled, Analysis of interface electronic structure in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N/GaN</mi></math> heterostructures

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Indium nitride: Evidence of electron accumulation

T. D. Veal; I. Mahboob; L. F. J. Piper; C. F. McConville; Hai Lu; W. J. Schaff

J. Vac. Sci. Technol. B 22, 2175–2178 (2004) https://doi.org/10.1116/1.1771672

Abstract

View articletitled, Indium nitride: Evidence of electron accumulation

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Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model

Junji Kotani; Tamotsu Hashizume; Hideki Hasegawa

J. Vac. Sci. Technol. B 22, 2179–2189 (2004) https://doi.org/10.1116/1.1771678

Abstract

View articletitled, Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model

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Optical properties of wurtzite and zinc-blende GaN/AlN quantum dots

Vladimir A. Fonoberov; Alexander A. Balandin

J. Vac. Sci. Technol. B 22, 2190–2194 (2004) https://doi.org/10.1116/1.1768188

Abstract

View articletitled, Optical properties of wurtzite and zinc-blende GaN/AlN quantum dots

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Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates

Achim Trampert; Jean-Michel Chauveau; Klaus H. Ploog; Eric Tournié; Alvaro Guzmán

J. Vac. Sci. Technol. B 22, 2195–2200 (2004) https://doi.org/10.1116/1.1775197

Abstract

View articletitled, Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates

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Size selection of oxidized GaN crystallites and their cathodoluminescence properties

Miwako Akiyama; Shinichi Egawa; Kohji Matsukawa; Tohru Honda; Hideo Kawanishi

J. Vac. Sci. Technol. B 22, 2201–2204 (2004) https://doi.org/10.1116/1.1775198

Abstract

View articletitled, Size selection of oxidized GaN crystallites and their cathodoluminescence properties

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Oxides, Carbides, and Other Wide-Bandgap Materials

Experimental determination of valence band maxima for ${SrTiO}_{3},$ ${TiO}_{2},$ and SrO and the associated valence band offsets with Si(001)

S. A. Chambers; T. Droubay; T. C. Kaspar; M. Gutowski

J. Vac. Sci. Technol. B 22, 2205–2215 (2004) https://doi.org/10.1116/1.1768525

Abstract

View articletitled, Experimental determination of valence band maxima for <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">,</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">,</mi></math> and SrO and the associated valence band offsets with Si(001)

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Deposition of silicon carbide films using a high vacuum metalorganic chemical vapor deposition method with a single source precursor: Study of their structural properties

S. H. Jeong; D. C. Lim; H.-G. Jee; O. M. Moon; C.-K. Jung; J. S. Moon; S. K. Kim; S.-B. Lee; J.-H. Boo

J. Vac. Sci. Technol. B 22, 2216–2219 (2004) https://doi.org/10.1116/1.1775191

Abstract

View articletitled, Deposition of silicon carbide films using a high vacuum metalorganic chemical vapor deposition method with a single source precursor: Study of their structural properties

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In situ monitoring of Zn^* and Mg^* species during helicon-wave-excited-plasma sputtering epitaxy of ZnO and ${Mg}_{0.06} {Zn}_{0.94} O$ films

T. Koyama; T. Ohmori; N. Shibata; T. Onuma; S. F. Chichibu

J. Vac. Sci. Technol. B 22, 2220–2225 (2004) https://doi.org/10.1116/1.1768522

Abstract

View articletitled, In situ monitoring of Zn* and Mg* species during helicon-wave-excited-plasma sputtering epitaxy of ZnO and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mtext>0.06</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>0.94</mtext></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math> films

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Initial oxide/SiC interface formation on C-terminated β-SiC(100) $c(2×2)$ and graphitic C-rich β-SiC(100) 1×1 surfaces

M. G. Silly; J. Roy; H. Enriquez; P. Soukiassian; C. Crotti; S. Fontana; P. Perfetti

J. Vac. Sci. Technol. B 22, 2226–2232 (2004) https://doi.org/10.1116/1.1768532

Abstract

View articletitled, Initial oxide/SiC interface formation on C-terminated β-SiC(100) <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">c(2×2)</mtext></math> and graphitic C-rich β-SiC(100) 1×1 surfaces

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Epitaxial Growth

Real-time characterization of GaSb homo- and heteroepitaxy

S. Kim; K. L. Flock; M. Asar; I. K. Kim; D. E. Aspnes

J. Vac. Sci. Technol. B 22, 2233–2239 (2004) https://doi.org/10.1116/1.1771669

Abstract

View articletitled, Real-time characterization of GaSb homo- and heteroepitaxy

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Epitaxial growth of InGaAsSb/AlGaAsSb heterostructures for mid-infrared lasers based on strain engineering

J. B. Héroux; C. W. Pei; W. I. Wang

J. Vac. Sci. Technol. B 22, 2240–2243 (2004) https://doi.org/10.1116/1.1775196

Abstract

View articletitled, Epitaxial growth of InGaAsSb/AlGaAsSb heterostructures for mid-infrared lasers based on strain engineering

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Fundamental reactions controlling anion exchange during the synthesis of Sb/As mixed-anion heterojunctions

April S. Brown; Maria Losurdo; Giovanni Bruno; Terence Brown; Gary May

J. Vac. Sci. Technol. B 22, 2244–2249 (2004) https://doi.org/10.1116/1.1775201

Abstract

View articletitled, Fundamental reactions controlling anion exchange during the synthesis of Sb/As mixed-anion heterojunctions

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Cation variations at semiconductor interfaces: ZnSe(001)/GaAs(001) superlattices

H. H. Farrell; Randall A. LaViolette

J. Vac. Sci. Technol. B 22, 2250–2256 (2004) https://doi.org/10.1116/1.1773842

Abstract

View articletitled, Cation variations at semiconductor interfaces: ZnSe(001)/GaAs(001) superlattices

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On the formation mechanism of epitaxial Ge islands on partially relaxed SiGe buffer layers

H. J. Kim; J. Liu; Z. M. Zhao; Y. H. Xie

J. Vac. Sci. Technol. B 22, 2257–2260 (2004) https://doi.org/10.1116/1.1775188

Abstract

View articletitled, On the formation mechanism of epitaxial Ge islands on partially relaxed SiGe buffer layers

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Planar InAs growth on GaAs(001) and subsequent quantum dot formation by a surface induced morphological instability

K. G. Eyink; K. Mahalingam; J. Pitz; H. Smith; L. Grazulis

J. Vac. Sci. Technol. B 22, 2261–2265 (2004) https://doi.org/10.1116/1.1771671

Abstract

View articletitled, Planar InAs growth on GaAs(001) and subsequent quantum dot formation by a surface induced morphological instability

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Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates

Taketomo Sato; Isao Tamai; Hideki Hasegawa

J. Vac. Sci. Technol. B 22, 2266–2274 (2004) https://doi.org/10.1116/1.1773841

Abstract

View articletitled, Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates

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LETTERS

Fabrication of 100 nm pitch copper interconnects by electron beam lithography

W. Wu; R. Jonckheere; Z. Tökei; S. H. Brongersma; M. Van Hove; K. Maex

J. Vac. Sci. Technol. B 22, L11–L14 (2004) https://doi.org/10.1116/1.1771668

View articletitled, Fabrication of 100 nm pitch copper interconnects by electron beam lithography

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Nonorthogonal wafer dicing for waveguide, microelectromechanical systems, and nanotechnology applications

S. Pau; J. A. Taylor; C. S. Pai

J. Vac. Sci. Technol. B 22, L15–L16 (2004) https://doi.org/10.1116/1.1768184

Abstract

View articletitled, Nonorthogonal wafer dicing for waveguide, microelectromechanical systems, and nanotechnology applications

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Si-Dielectric Interfaces; Gate Oxides

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Oxides, Carbides, and Other Wide-Bandgap Materials

Epitaxial Growth

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