Skip Nav Destination
Issues
May 2004
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
In this Issue
REGULAR ARTICLES
Influence of preamorphization and recrystallization on indium doping profiles in silicon
R. Duffy; V. C. Venezia; A. Heringa; B. J. Pawlak; M. J. P. Hopstaken; Y. Tamminga; T. Dao; F. Roozeboom; C. C. Wang; C. H. Diaz; P. B. Griffin
J. Vac. Sci. Technol. B 22, 865–868 (2004)
https://doi.org/10.1116/1.1695333
Useful protocol for evaluating subtle and important differences between photoresist formulations
J. Vac. Sci. Technol. B 22, 869–874 (2004)
https://doi.org/10.1116/1.1695337
Fabrication of high-quality-factor photonic crystal microcavities in InAsP/InGaAsP membranes
J. Vac. Sci. Technol. B 22, 875–879 (2004)
https://doi.org/10.1116/1.1701848
In situ mass spectrometry in a 10 Torr W chemical vapor deposition process for film thickness metrology and real-time advanced process control
J. Vac. Sci. Technol. B 22, 880–887 (2004)
https://doi.org/10.1116/1.1695332
Size and site controlled Ga nanodots on GaAs seeded by focused ion beams
J. Vac. Sci. Technol. B 22, 888–892 (2004)
https://doi.org/10.1116/1.1695334
Plasma silicon oxide–silica xerogel based planar optical waveguides
J. Vac. Sci. Technol. B 22, 902–908 (2004)
https://doi.org/10.1116/1.1701847
Scaling down of ultrathin gate dielectrics by using a nitrided Si surface
J. Vac. Sci. Technol. B 22, 916–919 (2004)
https://doi.org/10.1116/1.1701849
High precision determination of the elastic strain of InGaN/GaN multiple quantum wells
M. F. Wu; Shengqiang Zhou; Shude Yao; Qiang Zhao; A. Vantomme; B. Van Daele; E. Piscopiello; G. Van Tendeloo; Y. Z. Tong; Z. J. Yang; T. J. Yu; G. Y. Zhang
J. Vac. Sci. Technol. B 22, 920–924 (2004)
https://doi.org/10.1116/1.1715085
Structure–property relationships in porous GaN generated by Pt-assisted electroless etching studied by Raman spectroscopy
J. Vac. Sci. Technol. B 22, 925–931 (2004)
https://doi.org/10.1116/1.1695335
Recent advances in processing of ZnO
J. Vac. Sci. Technol. B 22, 932–948 (2004)
https://doi.org/10.1116/1.1714985
Secondary ion mass spectrometry analysis of vertical cavity surface-emitting lasers
J. Vac. Sci. Technol. B 22, 949–952 (2004)
https://doi.org/10.1116/1.1715051
Hydrophobic/hydrophilic surface modification within buried air channels
Jose Luis Salas-Vernis; Joseph Paul Jayachandran; Seongho Park; Hollie A. Kelleher; Sue Ann Bidstrup Allen; Paul A. Kohl
J. Vac. Sci. Technol. B 22, 953–960 (2004)
https://doi.org/10.1116/1.1715084
Growth and characterization of compressive-strain GaInAsP/InP multiple-quantum-well laser diodes with the tensile-strain GaInP quantum barrier
J. Vac. Sci. Technol. B 22, 961–965 (2004)
https://doi.org/10.1116/1.1715086
Environment influence on Ti diffusion and layer degradation of a contact structure
J. Vac. Sci. Technol. B 22, 966–970 (2004)
https://doi.org/10.1116/1.1715088
Reduction of ohmic contact on with surface treatment using inductively coupled plasma
J. Vac. Sci. Technol. B 22, 971–973 (2004)
https://doi.org/10.1116/1.1715089
Enhancement-mode tunneling real space transfer high electron mobility transistor
J. Vac. Sci. Technol. B 22, 974–976 (2004)
https://doi.org/10.1116/1.1715090
Room-temperature nanoimprinting on metallo-organic complexes
J. Vac. Sci. Technol. B 22, 981–984 (2004)
https://doi.org/10.1116/1.1714952
Multicolumn cell: Evaluation of the proof of concept system
J. Vac. Sci. Technol. B 22, 985–988 (2004)
https://doi.org/10.1116/1.1715014
Influence of plasma treatment on microstructure and thermal stability of barriers for Cu interconnection
J. Vac. Sci. Technol. B 22, 993–999 (2004)
https://doi.org/10.1116/1.1715087
Measurements of shallow trench isolation by normal incidence optical critical dimension technique
J. Vac. Sci. Technol. B 22, 1000–1005 (2004)
https://doi.org/10.1116/1.1722039
Characterization of material contrast and effective wavelength effects in immersion inspection
J. Vac. Sci. Technol. B 22, 1006–1011 (2004)
https://doi.org/10.1116/1.1735820
Investigation of Ge profile on SiGe islands by scanning photoelectron microscopy
M.-H. Cho; Y. J. Cho; M. K. Lee; S. A. Park; Y. S. Roh; Y. K. Kim; K. Jeong; S. K. Kang; D.-H. Ko; H. J. Shin; K. W. Kwon
J. Vac. Sci. Technol. B 22, 1012–1016 (2004)
https://doi.org/10.1116/1.1736643
Incorporation efficiency of carbon in GaAs using carbon tetrabromide in solid source molecular beam epitaxy
J. Vac. Sci. Technol. B 22, 1017–1021 (2004)
https://doi.org/10.1116/1.1736644
Effects of and He on the properties of the trimethyl silane based low-k films
J. Widodo; L. N. Goh; W. Lu; S. G. Mhaisalkar; S. Ong; J. L. Sudijono; L. C. Hsia; P. Y. Tan; K. Y. Zeng
J. Vac. Sci. Technol. B 22, 1030–1036 (2004)
https://doi.org/10.1116/1.1736646
Effect of developer molecular size on roughness of dissolution front in electron-beam resist
J. Vac. Sci. Technol. B 22, 1037–1043 (2004)
https://doi.org/10.1116/1.1736647
Characteristics of high electron-mobility transistors
J. Vac. Sci. Technol. B 22, 1044–1047 (2004)
https://doi.org/10.1116/1.1736648
Enhanced cold field emission from 〈100〉 oriented β–W nanoemitters
J. Vac. Sci. Technol. B 22, 1048–1051 (2004)
https://doi.org/10.1116/1.1736642
Deep-ultraviolet resist contamination for copper/low-k dual-damascene patterning
J. Vac. Sci. Technol. B 22, 1052–1059 (2004)
https://doi.org/10.1116/1.1738672
Sulfur and low-temperature passivation of self-aligned graded-base InGaAs/InP heterostructure bipolar transistors
J. Vac. Sci. Technol. B 22, 1060–1066 (2004)
https://doi.org/10.1116/1.1738667
Alkylation of nanoporous silica thin films by high density plasma chemical vapor deposition of
J. Vac. Sci. Technol. B 22, 1067–1074 (2004)
https://doi.org/10.1116/1.1738668
Influence of the preferred orientation and thickness of zirconium nitride films on the diffusion property in copper
J. Vac. Sci. Technol. B 22, 1075–1083 (2004)
https://doi.org/10.1116/1.1738669
Evolution of tungsten-oxide whiskers synthesized by a rapid thermal-annealing treatment
M.-H. Cho; S. A. Park; K.-D. Yang; I. W. Lyo; K. Jeong; S. K. Kang; D.-H. Ko; K. W. Kwon; J. H. Ku; S. Y. Choi; H. J. Shin
J. Vac. Sci. Technol. B 22, 1084–1087 (2004)
https://doi.org/10.1116/1.1738670
Improvement of the morphological stability of Ni-silicided layers by using a molybdenum interlayer
J. Vac. Sci. Technol. B 22, 1088–1093 (2004)
https://doi.org/10.1116/1.1740762
Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen
J. Vac. Sci. Technol. B 22, 1094–1100 (2004)
https://doi.org/10.1116/1.1740764
Simulation of field-emitted electron trajectories and transport from carbon nanotubes
J. Vac. Sci. Technol. B 22, 1101–1107 (2004)
https://doi.org/10.1116/1.1755214
Characterization of electroplated copper films for three-dimensional advanced packaging
J. Vac. Sci. Technol. B 22, 1108–1113 (2004)
https://doi.org/10.1116/1.1755217
Electron-beam lithography with aromatic self-assembled monolayers on silicon surfaces
J. Vac. Sci. Technol. B 22, 1114–1117 (2004)
https://doi.org/10.1116/1.1715083
Fabrication and characterization of a condenser zone plate for compact x-ray microscopy
J. Vac. Sci. Technol. B 22, 1118–1122 (2004)
https://doi.org/10.1116/1.1738671
Sub-100 nm organic light-emitting diodes patterned with room temperature imprint lithography
J. Vac. Sci. Technol. B 22, 1123–1126 (2004)
https://doi.org/10.1116/1.1740763
Preparation of highly textured Mo and AlN films using a Ti seed layer for integrated high-Q film bulk acoustic resonators
J. Vac. Sci. Technol. B 22, 1127–1133 (2004)
https://doi.org/10.1116/1.1752904
Zirconium nitride/silver nanocomposite structures for biomedical applications
J. Vac. Sci. Technol. B 22, 1134–1140 (2004)
https://doi.org/10.1116/1.1752905
Characterization of resists for a vacuum-compatible photolithography process
J. Vac. Sci. Technol. B 22, 1141–1144 (2004)
https://doi.org/10.1116/1.1752906
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
J. Vac. Sci. Technol. B 22, 1145–1149 (2004)
https://doi.org/10.1116/1.1752907
Photomask Cr–MoSi etching
J. Vac. Sci. Technol. B 22, 1150–1159 (2004)
https://doi.org/10.1116/1.1755216
Fabrication of three-dimensional microstructures using standard ultraviolet and electron-beam lithography
J. Vac. Sci. Technol. B 22, 1160–1162 (2004)
https://doi.org/10.1116/1.1755213
Improved method for measuring photoacid generator kinetics in polymer thin films using normalized interdigitated electrode capacitance data
J. Vac. Sci. Technol. B 22, 1163–1173 (2004)
https://doi.org/10.1116/1.1755219
Composite thin films of for high transmittance attenuated phase shifting mask in ArF optical lithography
J. Vac. Sci. Technol. B 22, 1174–1178 (2004)
https://doi.org/10.1116/1.1701850
Oxide formation during ion bombardment of small silicon structures
J. Vac. Sci. Technol. B 22, 1179–1183 (2004)
https://doi.org/10.1116/1.1740761
Advanced techniques for the fabrication of square spiral photonic crystals by glancing angle deposition
J. Vac. Sci. Technol. B 22, 1184–1190 (2004)
https://doi.org/10.1116/1.1752903
BRIEF REPORTS AND COMMENTS
Design of a complementary-metal-oxide-semiconductor-compatible field-emission magnetic sensor with adjustable sensitivity
J. Vac. Sci. Technol. B 22, 1202–1205 (2004)
https://doi.org/10.1116/1.1722089
Improved quality and reliability of ultrathin (1.4–2.3 nm) gate oxides by radical-assisted oxidation utilizing a remote ultraviolet ozone source
Young-Joo Song; Bongki Mheen; Sang-Hoon Kim; Hyun-Chul Bae; Jin-Young Kang; Young-Shik Lee; Nae-Eung Lee; Kyu-Hwan Shim
J. Vac. Sci. Technol. B 22, 1206–1209 (2004)
https://doi.org/10.1116/1.1755215
Rapid repair of plasma ash damage in low-k dielectrics using supercritical
J. Vac. Sci. Technol. B 22, 1210–1212 (2004)
https://doi.org/10.1116/1.1755220
ERRATA
Papers from the 14th International Vacuum Microelectronics Conference
Fundamentals of Field Emission
Extraction of emission area from Fowler–Nordheim plots
J. Vac. Sci. Technol. B 22, 1222–1226 (2004)
https://doi.org/10.1116/1.1691410
Characterization of enhanced field emission from HfC-coated Si emitter arrays through parameter extraction
J. Vac. Sci. Technol. B 22, 1227–1233 (2004)
https://doi.org/10.1116/1.1689311
Analytical model for electron field emission from capped carbon nanotubes
J. Vac. Sci. Technol. B 22, 1234–1239 (2004)
https://doi.org/10.1116/1.1752902
Theoretical analysis of the enhanced electric field at the triple junction
J. Vac. Sci. Technol. B 22, 1240–1243 (2004)
https://doi.org/10.1116/1.1689309
Simulation study of carbon nanotube field emission display with under-gate and planar-gate structures
Yung-Chiang Lan; Chun-Tao Lee; Yuan Hu; Shih-Hung Chen; Cheng-Chung Lee; Bing-Yue Tsui; Tsang-Lang Lin
J. Vac. Sci. Technol. B 22, 1244–1249 (2004)
https://doi.org/10.1116/1.1710488
Modeling of emitted current distribution and electron trajectories in the thin-film field-emission triode
J. Vac. Sci. Technol. B 22, 1250–1257 (2004)
https://doi.org/10.1116/1.1736636
Remarkably low value of work function on W(100) produced by Y–O composite layer
J. Vac. Sci. Technol. B 22, 1258–1260 (2004)
https://doi.org/10.1116/1.1740757
Fabrication and Evaluation of Field Emitters
Electron emission from carbon black-based field emitters including diesel engine exhaust
J. Vac. Sci. Technol. B 22, 1261–1265 (2004)
https://doi.org/10.1116/1.1667517
Characteristics of nano electron source fabricated using beam assisted process
J. Vac. Sci. Technol. B 22, 1266–1268 (2004)
https://doi.org/10.1116/1.1669652
Synthesis and field-emission testing of carbon nanoflake edge emitters
Jianjun Wang; Mingyao Zhu; Xin Zhao; Ron A. Outlaw; Dennis M. Manos; Brian C. Holloway; Chinho Park; Tim Anderson; Victor P. Mammana
J. Vac. Sci. Technol. B 22, 1269–1272 (2004)
https://doi.org/10.1116/1.1701851
Microelectron field emitter array with focus lenses for multielectron beam lithography based on silicon on insulator wafer
J. Vac. Sci. Technol. B 22, 1273–1276 (2004)
https://doi.org/10.1116/1.1738118
Quadrupole-mass-spectroscopy studies on hot-filament chemical vapor deposition of carbon films with nanosized constituents
J. Vac. Sci. Technol. B 22, 1277–1281 (2004)
https://doi.org/10.1116/1.1722109
Growth of aligned nanowire arrays with AAO template and their field-emission properties
J. Vac. Sci. Technol. B 22, 1282–1285 (2004)
https://doi.org/10.1116/1.1752908
Carbon nanotube growth from Cu–Co alloys for field emission applications
J. Vac. Sci. Technol. B 22, 1286–1289 (2004)
https://doi.org/10.1116/1.1752900
Formation of graphite nanocones using metal nanoparticles as plasma etching masks
J. Vac. Sci. Technol. B 22, 1290–1293 (2004)
https://doi.org/10.1116/1.1740760
Fabrication of low-gate-current triode field emitters with planar carbon nanoparticle cathodes
J. Vac. Sci. Technol. B 22, 1294–1297 (2004)
https://doi.org/10.1116/1.1736635
Double-gate field emitters with planar carbon-nanoparticle cathodes: Simulation studies
J. Vac. Sci. Technol. B 22, 1303–1307 (2004)
https://doi.org/10.1116/1.1722066
Synthesis of very dense carbon nanotube bundles using silica supported metal catalyst
J. Vac. Sci. Technol. B 22, 1308–1311 (2004)
https://doi.org/10.1116/1.1752899
Novel Cathode Materials and Structures
Interference fringes observed in electron emission patterns of a multiwalled carbon nanotube
J. Vac. Sci. Technol. B 22, 1312–1314 (2004)
https://doi.org/10.1116/1.1722133
Field emission from carbon nanotube Mat
J. Vac. Sci. Technol. B 22, 1315–1318 (2004)
https://doi.org/10.1116/1.1667516
Competition of nitrogen doping and graphitization effect for field electron emission from nanocrystalline diamond films
A. V. Karabutov; V. I. Konov; V. G. Pereverzev; I. I. Vlasov; E. V. Zavedeev; S. M. Pimenov; E. N. Loubnin
J. Vac. Sci. Technol. B 22, 1319–1326 (2004)
https://doi.org/10.1116/1.1701852
Electron emission from heavily nitrogen-doped heteroepitaxial chemical vapor deposition diamond
J. Vac. Sci. Technol. B 22, 1327–1330 (2004)
https://doi.org/10.1116/1.1756585
Efficient electron emissions from printed carbon nanotubes by surface treatments
J. Vac. Sci. Technol. B 22, 1331–1334 (2004)
https://doi.org/10.1116/1.1722159
Fabrication of carbon nanotube array and its field emission property
J. Vac. Sci. Technol. B 22, 1335–1337 (2004)
https://doi.org/10.1116/1.1667515
Field-emission characteristics from carbon nanotube field emitter arrays grown on silicon emitters
J. Vac. Sci. Technol. B 22, 1338–1341 (2004)
https://doi.org/10.1116/1.1738117
Improvement in electron emission from carbon nanotube cathodes after Ar plasma treatment
J. Vac. Sci. Technol. B 22, 1342–1344 (2004)
https://doi.org/10.1116/1.1667518
Relationship between field emission property and composition of carbon nanotube paste for large area cold cathode
Sung Kee Kang; Jong Hyung Choi; Jae Hong Park; Jae-Hee Han; Ji-Beom Yoo; Joong-Woo Nam; Chun Kyu Lee; J. M. Kim
J. Vac. Sci. Technol. B 22, 1345–1348 (2004)
https://doi.org/10.1116/1.1667514
Field emission characteristics of defect-controlled polyimide tunneling cathode
J. Vac. Sci. Technol. B 22, 1353–1357 (2004)
https://doi.org/10.1116/1.1752901
Planar metal–insulator–semiconductor type field emitter fabricated on an epitaxial structure
J. Vac. Sci. Technol. B 22, 1358–1361 (2004)
https://doi.org/10.1116/1.1738116
Field Emission Display and Related Technologies
Development of field emission displays
J. Vac. Sci. Technol. B 22, 1362–1366 (2004)
https://doi.org/10.1116/1.1691409
Development of an advanced high efficiency electro-emission device
Kazuto Sakemura; Nobuyasu Negishi; Takashi Yamada; Hideo Satoh; Atsushi Watanabe; Takamasa Yoshikawa; Kiyohide Ogasawara; Nobuyoshi Koshida
J. Vac. Sci. Technol. B 22, 1367–1371 (2004)
https://doi.org/10.1116/1.1740759
Correlation between nanostructure and electron emission characteristics of a ballistic electron surface-emitting device
J. Vac. Sci. Technol. B 22, 1372–1376 (2004)
https://doi.org/10.1116/1.1710489
Fabrication of carbon-nanotube field-emitter array using polymer insulator
Kunihiko Nishimura; Zhiying Shen; Masahiro Fujikawa; Akihiko Hosono; Noritsuna Hashimoto; Satoru Kawamoto; Shoyu Watanabe; Shuhei Nakata
J. Vac. Sci. Technol. B 22, 1377–1381 (2004)
https://doi.org/10.1116/1.1736639
Luminescent properties of thin-film phosphors under low-voltage excitation
J. Vac. Sci. Technol. B 22, 1382–1385 (2004)
https://doi.org/10.1116/1.1710491
Synthesis of Zn-doped fine-particle phosphor by the sol-gel method
J. Vac. Sci. Technol. B 22, 1386–1389 (2004)
https://doi.org/10.1116/1.1710490
Application of Field Emission Devices
256×192 pixel field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target
Yoshiro Takiguchi; M. Nanba; K. Osada; T. Watabe; S. Okazaki; N. Egami; K. Tanioka; M. Tanaka; S. Itoh
J. Vac. Sci. Technol. B 22, 1390–1395 (2004)
https://doi.org/10.1116/1.1667519
Electron emission characteristics from a single crystalline ferroelectric material by an infrared light irradiation
J. Vac. Sci. Technol. B 22, 1396–1401 (2004)
https://doi.org/10.1116/1.1738115
Integration of field emitters into scanning probe microscopy sensors using focused ion and electron beams
J. Vac. Sci. Technol. B 22, 1402–1406 (2004)
https://doi.org/10.1116/1.1689310
Optimization of silicon field-emission arrays fabrication for space applications
J. Vac. Sci. Technol. B 22, 1407–1410 (2004)
https://doi.org/10.1116/1.1736641
Adsorption of alkanethiol molecules onto carbon nanotube surface
Seungkwang Roh; Jihoon Oh; Youngwook Choi; Daewon Sohn; Wonsuk Kim; Cheongyu Cho; Whikun Yi; Jibeom Yoo; Changsoo Lee; Jongmin Kim
J. Vac. Sci. Technol. B 22, 1411–1415 (2004)
https://doi.org/10.1116/1.1740758
Conductivity change of carbon nanotube with strong electron-donating and withdrawing molecules
J. Vac. Sci. Technol. B 22, 1416–1419 (2004)
https://doi.org/10.1116/1.1736638
Papers from the 21st North American Conference on Molecular Beam Epitaxy
Arsenides and Phosphides
Selective epitaxial growth of GaAs on Si with strained short-period superlattices by molecular beam epitaxy under atomic hydrogen irradiation
J. Vac. Sci. Technol. B 22, 1428–1431 (2004)
https://doi.org/10.1116/1.1736634
Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection
J. Vac. Sci. Technol. B 22, 1432–1435 (2004)
https://doi.org/10.1116/1.1755711
Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy
J. Vac. Sci. Technol. B 22, 1436–1440 (2004)
https://doi.org/10.1116/1.1705579
Selective growth of and the optical characteristic
J. Vac. Sci. Technol. B 22, 1441–1443 (2004)
https://doi.org/10.1116/1.1699339
Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy
J. Vac. Sci. Technol. B 22, 1444–1449 (2004)
https://doi.org/10.1116/1.1738665
Single-phase growth studies of GaP on Si by solid-source molecular beam epitaxy
J. Vac. Sci. Technol. B 22, 1450–1454 (2004)
https://doi.org/10.1116/1.1669670
Antimonides
Epitaxial growth on gas cluster ion-beam processed GaSb substrates using molecular-beam epitaxy
K. Krishnaswami; S. R. Vangala; B. Zhu; W. D. Goodhue; L. P. Allen; C. Santeufemio; X. Liu; M. C. Ospina; J. Whitten; C. Sung; H. Dauplaise; D. Bliss; G. Dallas; D. Bakken; K. S. Jones
J. Vac. Sci. Technol. B 22, 1455–1459 (2004)
https://doi.org/10.1116/1.1714917
Molecular beam epitaxial growth of mid-infrared InGaAsSb laser diodes on indium-free GaSb substrates
J. Vac. Sci. Technol. B 22, 1460–1462 (2004)
https://doi.org/10.1116/1.1740768
Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at
J. Vac. Sci. Technol. B 22, 1463–1467 (2004)
https://doi.org/10.1116/1.1691411
Molecular beam epitaxial growth of AlGaPSb and AlGaPSb/InP distributed Bragg reflectors on InP
J. Vac. Sci. Technol. B 22, 1468–1471 (2004)
https://doi.org/10.1116/1.1669600
Effect of buffer layer on InSb quantum wells grown on GaAs (001) substrates
J. Vac. Sci. Technol. B 22, 1472–1474 (2004)
https://doi.org/10.1116/1.1699340
II-VI, Silicon, Oxides, and Nitrides
Investigation of radiative and nonradiative trap centers in ZnSe:Al layers grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 22, 1475–1478 (2004)
https://doi.org/10.1116/1.1755713
Low-temperature Si growth on Si (001): Impurity incorporation and limiting thickness for epitaxy
J. Vac. Sci. Technol. B 22, 1479–1483 (2004)
https://doi.org/10.1116/1.1650852
Molecular beam epitaxy growth of ZnO using initial Zn layer and MgO buffer layer on Si(111) substrates
J. Vac. Sci. Technol. B 22, 1484–1486 (2004)
https://doi.org/10.1116/1.1740766
Effect of Ga-rich growth conditions on the optical properties of GaN films grown by plasma-assisted molecular beam epitaxy
A. V. Sampath; G. A. Garrett; C. J. Collins; P. Boyd; J. Choe; P. G. Newman; H. Shen; M. Wraback; R. J. Molnar; J. Caissie
J. Vac. Sci. Technol. B 22, 1487–1490 (2004)
https://doi.org/10.1116/1.1688359
Probing the electronic structures of III–V-nitride semiconductors by x-ray photoelectron spectroscopy
T. S. Lay; W. T. Kuo; L. P. Chen; Y. H. Lai; W. H. Hung; J. S. Wang; J. Y. Chi; D. K. Shih; H. H. Lin
J. Vac. Sci. Technol. B 22, 1491–1494 (2004)
https://doi.org/10.1116/1.1735802
Similarities between and grown on GaAs (001) substrates
J. Vac. Sci. Technol. B 22, 1495–1498 (2004)
https://doi.org/10.1116/1.1752915
Quantum Dots and Wires
Heterostructures for achieving large responsivity in InAs/GaAs quantum dot infrared photodetectors
J. Vac. Sci. Technol. B 22, 1499–1502 (2004)
https://doi.org/10.1116/1.1755709
Improvement on the InAs quantum dot size distribution employing high-temperature GaAs(100) substrate treatment
J. Vac. Sci. Technol. B 22, 1503–1507 (2004)
https://doi.org/10.1116/1.1705577
Temperature stabilized photoluminescence in InAs quantum dots grown on InAlGaAs/InP
J. Vac. Sci. Technol. B 22, 1508–1511 (2004)
https://doi.org/10.1116/1.1688358
Study of structural and optical properties of quantum dots-in-a-well heterostructures
J. Vac. Sci. Technol. B 22, 1512–1514 (2004)
https://doi.org/10.1116/1.1705578
Temperature dependence of optical properties of quantum dots grown on GaAs (001)
J. Vac. Sci. Technol. B 22, 1515–1517 (2004)
https://doi.org/10.1116/1.1705576
CdSe quantum dots grown on ZnSe and by molecular-beam epitaxy: Optical studies
Xuecong Zhou; Martin Muñoz; Shiping Guo; Maria C. Tamargo; Yi Gu; Igor L. Kuskovsky; Gertrude F. Neumark
J. Vac. Sci. Technol. B 22, 1518–1522 (2004)
https://doi.org/10.1116/1.1690780
Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor
Kee-Youn Jang; Takeyoshi Sugaya; Cheol-Koo Hahn; Mutsuo Ogura; Kazuhiro Komori; Akito Shinoda; Kenji Yonei
J. Vac. Sci. Technol. B 22, 1523–1525 (2004)
https://doi.org/10.1116/1.1752911
Polarization control of vertical cavity surface emitting laser structure by using self-organized quantum wires grown on (775)B-oriented GaAs substrate by molecular beam epitaxy
Yasuhide Ohno; Satoshi Shimomura; Satoshi Hiyamizu; Yasuyuki Takasuka; Mutsuo Ogura; Kazuhiro Komori
J. Vac. Sci. Technol. B 22, 1526–1528 (2004)
https://doi.org/10.1116/1.1738666
Analysis of atomic structure in InAs quantum dashes grown on AlGaAsSb metamorphic buffers
J. Vac. Sci. Technol. B 22, 1529–1533 (2004)
https://doi.org/10.1116/1.1755710
Molecular Beam Epitaxy Technology
Studies of oxide desorption from GaAs substrates via to conversion by exposure to Ga flux
J. Vac. Sci. Technol. B 22, 1534–1538 (2004)
https://doi.org/10.1116/1.1752913
Real-time stress evolution during growth of metamorphic buffer layers
J. Vac. Sci. Technol. B 22, 1539–1543 (2004)
https://doi.org/10.1116/1.1669622
Influence of background pressure on the incorporation of arsenic during molecular beam epitaxy growth of GaAs
J. Vac. Sci. Technol. B 22, 1544–1548 (2004)
https://doi.org/10.1116/1.1755712
Flux profile modeling: Monte Carlo simulation and numerical computation
J. Vac. Sci. Technol. B 22, 1549–1553 (2004)
https://doi.org/10.1116/1.1752912
Devices and Characterization
Material properties and performance of metamorphic optoelectronic integrated circuits grown by molecular beam epitaxy on GaAs substrates
W. E. Hoke; R. E. Leoni; C. S. Whelan; T. D. Kennedy; A. Torabi; P. F. Marsh; Y. Zhang; C. Xu; K. C. Hsieh
J. Vac. Sci. Technol. B 22, 1554–1557 (2004)
https://doi.org/10.1116/1.1669585
Molecular-beam epitaxy growth of quantum cascade lasers on (111)B substrates for second harmonic generation
J. Vac. Sci. Technol. B 22, 1558–1561 (2004)
https://doi.org/10.1116/1.1752916
GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 μm
J. Vac. Sci. Technol. B 22, 1562–1564 (2004)
https://doi.org/10.1116/1.1714940
Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications
D. Lubyshev; J. M. Fastenau; X.-M. Fang; Y. Wu; C. Doss; A. Snyder; W. K. Liu; M. S. M. Lamb; S. Bals; C. Song
J. Vac. Sci. Technol. B 22, 1565–1569 (2004)
https://doi.org/10.1116/1.1691412
Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy
M. D. Lange; A. Cavus; C. Monier; R. S. Sandhu; T. R. Block; V. F. Gambin; D. J. Sawdai; A. L. Gutierrez-Aitken
J. Vac. Sci. Technol. B 22, 1570–1574 (2004)
https://doi.org/10.1116/1.1752917
Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structures
C. L. Canedy; G. I. Boishin; W. W. Bewley; C. S. Kim; I. Vurgaftman; M. Kim; J. R. Lindle; J. R. Meyer; L. J. Whitman
J. Vac. Sci. Technol. B 22, 1575–1579 (2004)
https://doi.org/10.1116/1.1688805
Terahertz magneto-photoconductive characterization of hydrogenic barrier donors in GaAs/AlGaAs epitaxial thin films
J. Vac. Sci. Technol. B 22, 1580–1583 (2004)
https://doi.org/10.1116/1.1738664
Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 22, 1588–1592 (2004)
https://doi.org/10.1116/1.1650853
Combined x-ray diffraction/scanning tunneling microscopy study of segregation and interfacial bonding in type-II heterostructures
J. Vac. Sci. Technol. B 22, 1593–1597 (2004)
https://doi.org/10.1116/1.1699341
Compositional analysis of graded layers by x-ray energy dispersive spectrometry
J. Vac. Sci. Technol. B 22, 1598–1601 (2004)
https://doi.org/10.1116/1.1740767
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry
Shiva Mudide, Nick Keller, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.