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Issues
January 2004
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
In this Issue
REGULAR ARTICLES
Silicon deposition from mixtures: Effect of very high boron concentration on microstructure
J. Vac. Sci. Technol. B 22, 1–5 (2004)
https://doi.org/10.1116/1.1631292
What happens in the annealing of carbon nitride thin films?
J. Vac. Sci. Technol. B 22, 6–11 (2004)
https://doi.org/10.1116/1.1631293
Electrical test structures for mapping nanometer-scale pattern placement errors
J. Vac. Sci. Technol. B 22, 12–15 (2004)
https://doi.org/10.1116/1.1633279
Nanoimprint using three-dimensional microlens mold made by focused-ion-beam chemical vapor deposition
K. Watanabe; T. Morita; R. Kometani; T. Hoshino; K. Kondo; K. Kanda; Y. Haruyama; T. Kaito; J. Fujita; M. Ishida; Y. Ochiai; T. Tajima; S. Matsui
J. Vac. Sci. Technol. B 22, 22–26 (2004)
https://doi.org/10.1116/1.1633281
Fluoropolymers for 157 nm single-layer resists
M. Toriumi; T. Ishikawa; T. Kodani; M. Koh; T. Moriya; T. Yamashita; T. Araki; H. Aoyama; T. Yamazaki; T. Furukawa; T. Itani
J. Vac. Sci. Technol. B 22, 27–30 (2004)
https://doi.org/10.1116/1.1633282
Fabrication of FePt nanoparticles for self-organized magnetic array
J. Vac. Sci. Technol. B 22, 31–34 (2004)
https://doi.org/10.1116/1.1633283
Vertically aligned carbon nanofiber-based field emission electron sources with an integrated focusing electrode
M. A. Guillorn; X. Yang; A. V. Melechko; D. K. Hensley; M. D. Hale; V. I. Merkulov; M. L. Simpson; L. R. Baylor; W. L. Gardner; D. H. Lowndes
J. Vac. Sci. Technol. B 22, 35–39 (2004)
https://doi.org/10.1116/1.1633768
Tantalum film for x-ray lithography mask deposited by electron cyclotron resonance plasma source coupled with divided microwaves
J. Vac. Sci. Technol. B 22, 40–45 (2004)
https://doi.org/10.1116/1.1633769
Crystallographic effects in micro/nanomachining of single-crystal calcium fluoride
J. Vac. Sci. Technol. B 22, 46–51 (2004)
https://doi.org/10.1116/1.1633770
Physical and electrical properties of ultrathin stacked gate dielectrics on compressively strained- heterolayers
J. Vac. Sci. Technol. B 22, 52–56 (2004)
https://doi.org/10.1116/1.1633771
Key role of nanocrystalline feature in porous polycrystalline silicon diodes for efficient ballistic electron emission
J. Vac. Sci. Technol. B 22, 57–59 (2004)
https://doi.org/10.1116/1.1633772
Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots
J. Vac. Sci. Technol. B 22, 60–64 (2004)
https://doi.org/10.1116/1.1633774
Characterization of scratches generated by a multiplaten copper chemical–mechanical polishing process
J. Vac. Sci. Technol. B 22, 65–69 (2004)
https://doi.org/10.1116/1.1634958
Fabrication of InP-based two-dimensional photonic crystal membrane
J. Vac. Sci. Technol. B 22, 70–73 (2004)
https://doi.org/10.1116/1.1635848
Nanofabrication using nanotranslated stencil masks and lift off
Zoltan Racz; Jianli He; Srivatsan Srinivasan; Wei Zhao; Alan Seabaugh; Keping Han; Paul Ruchhoeft; Jack Wolfe
J. Vac. Sci. Technol. B 22, 74–76 (2004)
https://doi.org/10.1116/1.1637916
Electrical and optical properties of hydrogen plasma treated -AlGaN films grown by hydride vapor phase epitaxy
A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; N. V. Pashkova; A. A. Shlensky; K. H. Baik; S. J. Pearton; B. Luo; F. Ren; J. M. Zavada
J. Vac. Sci. Technol. B 22, 77–81 (2004)
https://doi.org/10.1116/1.1640395
Milling of submicron channels on gold layer using double charged arsenic ion beam
J. Vac. Sci. Technol. B 22, 82–89 (2004)
https://doi.org/10.1116/1.1640396
Selective growth of carbon nanotube on scanning probe tips by microwave plasma chemical vapor deposition
J. Vac. Sci. Technol. B 22, 90–93 (2004)
https://doi.org/10.1116/1.1640399
Method of control of nitrogen content in ZnO films: Structural and photoluminescence properties
J. Vac. Sci. Technol. B 22, 94–98 (2004)
https://doi.org/10.1116/1.1641057
Wave-front errors of reference spherical waves in high-numerical aperture point diffraction interferometers
Yoshiyuki Sekine; Akiyoshi Suzuki; Masanobu Hasegawa; Chidane Ouchi; Shinichi Hara; Takayuki Hasegawa; Yoshiyuki Kuramoto; Seima Kato; Katsuhiko Murakami; Jun Saito; Kazuya Ota; Hiroyuki Kondo; Mikihiko Ishii; Jun Kawakami; Tetsuya Oshino; Katsumi Sugisaki; Yucong Zhu; Katsura Otaki; Zhiqiang Liu
J. Vac. Sci. Technol. B 22, 104–108 (2004)
https://doi.org/10.1116/1.1640403
Silicon–germanium spherical quantum dot infrared photodetectors prepared by the combination of bottom-up and top-down technologies
J. Vac. Sci. Technol. B 22, 109–115 (2004)
https://doi.org/10.1116/1.1641059
Roles of copper mechanical characteristics in electropolishing
J. Vac. Sci. Technol. B 22, 116–119 (2004)
https://doi.org/10.1116/1.1633775
Properties of Fe-doped semi-insulating GaN structures
J. Vac. Sci. Technol. B 22, 120–125 (2004)
https://doi.org/10.1116/1.1633776
Improvement of resolution in x-ray lithography by reducing secondary electron blur
J. Vac. Sci. Technol. B 22, 126–130 (2004)
https://doi.org/10.1116/1.1635847
Vinyl ethers in ultraviolet curable formulations for step and flash imprint lithography
J. Vac. Sci. Technol. B 22, 131–135 (2004)
https://doi.org/10.1116/1.1635849
Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process
Masaki Yoshizawa; Kumiko Oguni; Hiroyuki Nakano; Keiko Amai; Shoji Nohama; Shigeru Moriya; Tetsuya Kitagawa
J. Vac. Sci. Technol. B 22, 136–139 (2004)
https://doi.org/10.1116/1.1635850
Wetting and dissolution studies of fluoropolymers used in 157 nm photolithography applications
T. J. Markley; J. A. Marsella; E. A. Robertson, III; G. E. Parris; Z. Zarkov; V. Jakubek; C. K. Ober
J. Vac. Sci. Technol. B 22, 140–145 (2004)
https://doi.org/10.1116/1.1637914
Combination lithography for photonic-crystal circuits
J. Vac. Sci. Technol. B 22, 146–151 (2004)
https://doi.org/10.1116/1.1637915
High-energy ion projection for deep ion implantation as a low cost high throughput alternative for subsequent epitaxy processes
Jan Meijer; Bernd Burchard; Katja Ivanova; Burkhard E. Volland; Ivo W. Rangelow; Michael Rüb; Gerald Deboy
J. Vac. Sci. Technol. B 22, 152–157 (2004)
https://doi.org/10.1116/1.1637917
Growth of strained Si and strained Ge heterostructures on relaxed by ultrahigh vacuum chemical vapor deposition
J. Vac. Sci. Technol. B 22, 158–164 (2004)
https://doi.org/10.1116/1.1640397
Fabrication and characterization of a monolithic thin-film edge emitter device with zinc–oxide–tungsten-based thin-film phosphor
J. Vac. Sci. Technol. B 22, 165–170 (2004)
https://doi.org/10.1116/1.1640400
Specific contact resistance of Ti/Al/Pt/Au ohmic contacts to phosphorus-doped ZnO thin films
J. Vac. Sci. Technol. B 22, 171–174 (2004)
https://doi.org/10.1116/1.1641060
Characteristics of thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices
J. Vac. Sci. Technol. B 22, 175–179 (2004)
https://doi.org/10.1116/1.1640398
Self-annealing effect of electrolessly deposited copper thin films based on Co(II)–ethylenediamine as a reducing agent
J. Vac. Sci. Technol. B 22, 180–184 (2004)
https://doi.org/10.1116/1.1642640
Nanoimprint lithography of chromophore molecules under high-vacuum conditions
J. Vac. Sci. Technol. B 22, 185–188 (2004)
https://doi.org/10.1116/1.1641056
Negative resist image by dry etching as a surface imaging process using focused ion beams
J. Vac. Sci. Technol. B 22, 189–195 (2004)
https://doi.org/10.1116/1.1641058
Compositional effects on electrical and mechanical properties in carbon-doped oxide dielectric films: Application of Fourier-transform infrared spectroscopy
Ebrahim Andideh; Michael Lerner; Gerald Palmrose; Safaa El-Mansy; Tracey Scherban; Guanghai Xu; Jeanette Blaine
J. Vac. Sci. Technol. B 22, 196–201 (2004)
https://doi.org/10.1116/1.1640401
Model for photoresist trim etch in inductively coupled plasma
J. Vac. Sci. Technol. B 22, 202–211 (2004)
https://doi.org/10.1116/1.1642638
Local excitation of surface plasmon in structured Au films by atomic force anodic oxidation
J. Vac. Sci. Technol. B 22, 212–215 (2004)
https://doi.org/10.1116/1.1642641
Initiation and evolution of phase separation in GaP/InP short-period superlattices
J. Vac. Sci. Technol. B 22, 216–219 (2004)
https://doi.org/10.1116/1.1642642
Microfabrication of silicon–nitride micromesh bolometric detectors for planck high frequency instrument
Minhee Yun; Jamie Bock; Warren Holmes; Tim Koch; Jerry Mulder; Richard P. Vasquez; Larry Wild; Andrew Lange
J. Vac. Sci. Technol. B 22, 220–225 (2004)
https://doi.org/10.1116/1.1642644
Mechanism of ArF resist-pattern shrinkage in critical-dimension scanning electron microscopy measurement
J. Vac. Sci. Technol. B 22, 226–230 (2004)
https://doi.org/10.1116/1.1643055
Electron beam prebunching in planar cold cathodes with surface current carrying thin films
J. Vac. Sci. Technol. B 22, 231–236 (2004)
https://doi.org/10.1116/1.1643398
Growth of Si wires on a Si(111) substrate under ultrahigh vacuum condition
J. Vac. Sci. Technol. B 22, 237–239 (2004)
https://doi.org/10.1116/1.1643401
Advanced processing techniques for through-wafer interconnects
J. Vac. Sci. Technol. B 22, 248–256 (2004)
https://doi.org/10.1116/1.1642643
Nanomanipulator and actuator fabrication on glass capillary by focused-ion-beam-chemical vapor deposition
Reo Kometani; Takahiko Morita; Keiichiro Watanabe; Takayuki Hoshino; Kazushige Kondo; Kazuhiro Kanda; Yuichi Haruyama; Takashi Kaito; Jun-ichi Fujita; Masahiko Ishida; Yukinori Ochiai; Shinji Matsui
J. Vac. Sci. Technol. B 22, 257–263 (2004)
https://doi.org/10.1116/1.1643056
Actinic mask metrology for extreme ultraviolet lithography
H. Kinoshita; T. Haga; K. Hamamoto; S. Takada; N. Kazui; S. Kakunai; H. Tsubakino; T. Shoki; M. Endo; T. Watanabe
J. Vac. Sci. Technol. B 22, 264–267 (2004)
https://doi.org/10.1116/1.1643057
Dry cleaning technique for particle removal based on gas-flow and down-flow plasma
J. Vac. Sci. Technol. B 22, 268–274 (2004)
https://doi.org/10.1116/1.1643399
BRIEF REPORTS AND COMMENTS
Optimized lift-off technique for deposition of high-quality Ti strip on crystal
J. Vac. Sci. Technol. B 22, 283–285 (2004)
https://doi.org/10.1116/1.1637913
PAPERS FROM THE SEVENTH INTERNATIONAL WORKSHOP ON THE FABRICATION, CHARACTERIZATION, AND MODELING OF ULTRA-SHALLOW DOPING PROFILES IN SEMICONDUCTORS
Progress and New Ideas in USJ Fabrication
Recent developments and applications of plasma immersion ion implantation
J. Vac. Sci. Technol. B 22, 289–296 (2004)
https://doi.org/10.1116/1.1632920
Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth
B. J. Pawlak; R. Lindsay; R. Surdeanu; B. Dieu; L. Geenen; I. Hoflijk; O. Richard; R. Duffy; T. Clarysse; B. Brijs; W. Vandervorst; C. J. J. Dachs
J. Vac. Sci. Technol. B 22, 297–301 (2004)
https://doi.org/10.1116/1.1643053
Ultrashallow junction formation by point defect engineering
Lin Shao; Phillip E. Thompson; P. A. W. van der Heide; Sanjay Patel; Quak. Y. Chen; Xuemei Wang; Hui Chen; Jiarui Liu; Wei-Kan Chu
J. Vac. Sci. Technol. B 22, 302–305 (2004)
https://doi.org/10.1116/1.1621887
Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth
R. Lindsay; K. Henson; W. Vandervorst; K. Maex; B. J. Pawlak; R. Duffy; R. Surdeanu; P. Stolk; J. A. Kittl; S. Giangrandi; X. Pages; K. van der Jeugd
J. Vac. Sci. Technol. B 22, 306–311 (2004)
https://doi.org/10.1116/1.1638774
Influence of low temperature preanneals on dopant and defect behavior for low energy Ge preamorphized silicon
J. Vac. Sci. Technol. B 22, 312–316 (2004)
https://doi.org/10.1116/1.1627791
Sputter Depth Profiling
Ultra-shallow depth profiling with secondary ion mass spectrometry
J. Vac. Sci. Technol. B 22, 317–322 (2004)
https://doi.org/10.1116/1.1622672
Development of multiple As delta layer Si reference thin film for shallow junction secondary ion mass spectrometry profiling
J. Vac. Sci. Technol. B 22, 323–326 (2004)
https://doi.org/10.1116/1.1634956
Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors
Erika Duda; Shifeng Lu; Chun-Li Liu; Zhixiong Jiang; Joe Lerma; Alex Barr; Aaron Thean; Marius Orlowski; Ted White; Bich-Yen Nguyen
J. Vac. Sci. Technol. B 22, 327–331 (2004)
https://doi.org/10.1116/1.1640659
Optimization of secondary ion mass spectrometry ultra-shallow boron profiles using an oblique incidence beam
J. Vac. Sci. Technol. B 22, 336–340 (2004)
https://doi.org/10.1116/1.1638776
Accurate in depth profiling of As and P shallow implants by secondary ion mass spectroscopy
J. Vac. Sci. Technol. B 22, 341–345 (2004)
https://doi.org/10.1116/1.1634957
Secondary ion mass spectrometry analysis of implanted and rapid thermal processing annealed wafers for sub-100 nanometer technology
J. Vac. Sci. Technol. B 22, 346–349 (2004)
https://doi.org/10.1116/1.1633284
Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion
J. Vac. Sci. Technol. B 22, 350–354 (2004)
https://doi.org/10.1116/1.1617278
X-ray and secondary ion mass spectrometry investigation of activation behavior of self-preamorphized silicon substrate
J. Vac. Sci. Technol. B 22, 355–357 (2004)
https://doi.org/10.1116/1.1642647
1D and 2D Dopant Characterization
Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at and at room temperature
J. Vac. Sci. Technol. B 22, 369–372 (2004)
https://doi.org/10.1116/1.1638773
Two-dimensional ultrashallow junction characterization of metal-oxide-semiconductor field effect transistors with strained silicon
Xiang-Dong Wang; Chun-li Liu; Aaron Thean; Erika Duda; Ran Liu; Qianghua Xie; Shifeng Lu; Alex Barr; Ted White; Bich-yen Nguyen; Marius Orlowski
J. Vac. Sci. Technol. B 22, 373–376 (2004)
https://doi.org/10.1116/1.1627793
High-resolution scanning spreading resistance microscopy of surrounding-gate transistors
D. Álvarez; S. Schömann; B. Goebel; D. Manger; T. Schlösser; S. Slesazeck; J. Hartwich; J. Kretz; P. Eyben; M. Fouchier; W. Vandervorst
J. Vac. Sci. Technol. B 22, 377–380 (2004)
https://doi.org/10.1116/1.1632921
Study on poly depletion in sub-0.1 μm metal–oxide–semiconductor field effect transistors by scanning capacitance microscopy
Y. G. Wang; H. Edwards; V. Ukraintsev; J. Wu; J. Chen; J. Waller; D. Woodall; D. B. Scott; C. Machala; S. Ekbote; A. Tsao
J. Vac. Sci. Technol. B 22, 381–384 (2004)
https://doi.org/10.1116/1.1638777
Assessing the performance of two-dimensional dopant profiling techniques
N. Duhayon; P. Eyben; M. Fouchier; T. Clarysse; W. Vandervorst; D. Álvarez; S. Schoemann; M. Ciappa; M. Stangoni; W. Fichtner; P. Formanek; M. Kittler; V. Raineri; F. Giannazzo; D. Goghero; Y. Rosenwaks; R. Shikler; S. Saraf; S. Sadewasser; N. Barreau; T. Glatzel; M. Verheijen; S. A. M. Mentink; M. von Sprekelsen; T. Maltezopoulos; R. Wiesendanger; L. Hellemans
J. Vac. Sci. Technol. B 22, 385–393 (2004)
https://doi.org/10.1116/1.1638775
Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon
J. Vac. Sci. Technol. B 22, 394–398 (2004)
https://doi.org/10.1116/1.1622671
Towards reproducible scanning capacitance microscope image interpretation
J. Vac. Sci. Technol. B 22, 399–405 (2004)
https://doi.org/10.1116/1.1627794
Accuracy of scanning capacitance microscopy for the delineation of electrical junctions
J. Vac. Sci. Technol. B 22, 406–410 (2004)
https://doi.org/10.1116/1.1642646
On calculating scanning capacitance microscopy data for a dopant profile in semiconductors
J. Vac. Sci. Technol. B 22, 411–416 (2004)
https://doi.org/10.1116/1.1619422
PSPICE analysis of a scanning capacitance microscope sensor
J. Vac. Sci. Technol. B 22, 417–421 (2004)
https://doi.org/10.1116/1.1631290
Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy
J. Vac. Sci. Technol. B 22, 422–426 (2004)
https://doi.org/10.1116/1.1643054
Electron Holography and Novel Methods
Two-dimensional dopant profiling of ultrashallow junction with off-axis electron holography: A round robin experiment
J. Vac. Sci. Technol. B 22, 427–431 (2004)
https://doi.org/10.1116/1.1642648
Nondestructive dopant profile measurement and its quantitative analysis using the nanocapacitance–voltage method
J. Vac. Sci. Technol. B 22, 432–438 (2004)
https://doi.org/10.1116/1.1640657
Carrier illumination for characterization of ultrashallow doping profiles
J. Vac. Sci. Technol. B 22, 439–443 (2004)
https://doi.org/10.1116/1.1617279
Metal film characterization with qualified spreading resistance
J. Vac. Sci. Technol. B 22, 444–449 (2004)
https://doi.org/10.1116/1.1631291
Electrical characterization of silicon-on-insulator structures with a nondamaging elastic–metal gate
J. Vac. Sci. Technol. B 22, 450–454 (2004)
https://doi.org/10.1116/1.1621888
Dopant Diffusion and the Role of Defects
Diffusion and segregation of shallow As and Sb junctions in silicon
J. Vac. Sci. Technol. B 22, 455–458 (2004)
https://doi.org/10.1116/1.1632919
Secondary defect formation in bonded silicon-on-insulator after boron implantation
J. Vac. Sci. Technol. B 22, 459–462 (2004)
https://doi.org/10.1116/1.1640656
Analytical damage tables for crystalline silicon
J. Vac. Sci. Technol. B 22, 463–467 (2004)
https://doi.org/10.1116/1.1631289
{311} defect evolution in ion-implanted, relaxed
J. Vac. Sci. Technol. B 22, 468–470 (2004)
https://doi.org/10.1116/1.1619423
Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation
J. Vac. Sci. Technol. B 22, 471–476 (2004)
https://doi.org/10.1116/1.1642645
LETTERS
Ionization-assisted deposition of LiF electron-injection layer for organic light-emitting diodes
J. Vac. Sci. Technol. B 22, L1–L4 (2004)
https://doi.org/10.1116/1.1633773
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry
Shiva Mudide, Nick Keller, et al.