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September 2003

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

REVIEW ARTICLE

Review of trench and via plasma etch issues for copper dual damascene in undoped and fluorine-doped silicate glass oxide

D. L. Keil; B. A. Helmer; S. Lassig

J. Vac. Sci. Technol. B 21, 1969–1985 (2003) https://doi.org/10.1116/1.1603293

Abstract

View articletitled, Review of trench and via plasma etch issues for copper dual damascene in undoped and fluorine-doped silicate glass oxide

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ARTICLES

Electron field-emission from diamond-like carbon films grown by a saddle field fast atom beam source

O. S. Panwar; Rajnish Sharma; Sushil Kumar; P. N. Dixit

J. Vac. Sci. Technol. B 21, 1986–1995 (2003) https://doi.org/10.1116/1.1598977

Abstract

View articletitled, Electron field-emission from diamond-like carbon films grown by a saddle field fast atom beam source

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Investigation of the ${NO}_{2}$ sensitivity properties of multiwalled carbon nanotubes prepared by plasma enhanced chemical vapor deposition

L. Valentini; C. Cantalini; I. Armentano; J. M. Kenny; L. Lozzi; S. Santucci

J. Vac. Sci. Technol. B 21, 1996–2000 (2003) https://doi.org/10.1116/1.1599858

Abstract

View articletitled, Investigation of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NO</mi><mrow><mn>2</mn></mrow></msub></math> sensitivity properties of multiwalled carbon nanotubes prepared by plasma enhanced chemical vapor deposition

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Fabrication of device-grade silicon-on-insulator material from appropriate matches of low oxygen implantation dose and acceleration energy

Meng Chen; Xiang Wang; Jing Chen; Yeming Dong; Wangbin Yi; Xianghua Liu; Xi Wang

J. Vac. Sci. Technol. B 21, 2001–2010 (2003) https://doi.org/10.1116/1.1599859

Abstract

View articletitled, Fabrication of device-grade silicon-on-insulator material from appropriate matches of low oxygen implantation dose and acceleration energy

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Particle coating in seeded dusty plasma reactor: Distribution of deposition rates

Jin Cao; Themis Matsoukas

J. Vac. Sci. Technol. B 21, 2011–2017 (2003) https://doi.org/10.1116/1.1603283

Abstract

View articletitled, Particle coating in seeded dusty plasma reactor: Distribution of deposition rates

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Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist

W. Henschel; Y. M. Georgiev; H. Kurz

J. Vac. Sci. Technol. B 21, 2018–2025 (2003) https://doi.org/10.1116/1.1603284

Abstract

View articletitled, Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist

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Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications

Chang Seok Kang; H.-J. Cho; Y. H. Kim; R. Choi; K. Onishi; A. Shahriar; J. C. Lee

J. Vac. Sci. Technol. B 21, 2026–2028 (2003) https://doi.org/10.1116/1.1603285

Abstract

View articletitled, Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications

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Characterization of atomic-layer-deposited hafnium oxide/SiON stacked-gate dielectrics

Young-Bae Kim; Moon-Soo Kang; Taeho Lee; Jinho Ahn; Duck-Kyun Choi

J. Vac. Sci. Technol. B 21, 2029–2033 (2003) https://doi.org/10.1116/1.1603286

Abstract

View articletitled, Characterization of atomic-layer-deposited hafnium oxide/SiON stacked-gate dielectrics

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Characterization of diamond sonic micronozzles and microtube

S. S. Mammana; M. C. Salvadori; K. Kawakita; M. T. Pereira; M. Cattani

J. Vac. Sci. Technol. B 21, 2034–2037 (2003) https://doi.org/10.1116/1.1603287

Abstract

View articletitled, Characterization of diamond sonic micronozzles and microtube

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Differential algebraic theory and calculation for arbitrary high order aberrations of a bipotential electrostatic lens

Min Cheng; Yilong Lu; Zhenhua Yao

J. Vac. Sci. Technol. B 21, 2038–2042 (2003) https://doi.org/10.1116/1.1603291

Abstract

View articletitled, Differential algebraic theory and calculation for arbitrary high order aberrations of a bipotential electrostatic lens

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In-plane vector magnetometry on rectangular Co dots using polarized neutron reflectivity

K. Temst; M. J. Van Bael; J. Swerts; D. Buntinx; C. Van Haesendonck; Y. Bruynseraede; H. Fritzsche; R. Jonckheere

J. Vac. Sci. Technol. B 21, 2043–2047 (2003) https://doi.org/10.1116/1.1605103

Abstract

View articletitled, In-plane vector magnetometry on rectangular Co dots using polarized neutron reflectivity

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Addition of He to Ar during sputter deposition of electroluminescent ZnS:TbOF thin films

J. P. Kim; M. R. Davidson; P. H. Holloway

J. Vac. Sci. Technol. B 21, 2048–2053 (2003) https://doi.org/10.1116/1.1605428

Abstract

View articletitled, Addition of He to Ar during sputter deposition of electroluminescent ZnS:TbOF thin films

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Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski–Krastanow mode

Ken-ichi Shiramine; Shunichi Muto; Tamaki Shibayama; Heishichiro Takahashi; Tamotsu Kozaki; Seichi Sato; Yoshiaki Nakata; Naoki Yokoyama

J. Vac. Sci. Technol. B 21, 2054–2059 (2003) https://doi.org/10.1116/1.1605429

Abstract

View articletitled, Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski–Krastanow mode

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Deposition of indium tin oxide films on polycarbonate substrates by using ion beam processes

Jun-Sik Cho; Seok-Keun Koh; Ki Hyun Yoon

J. Vac. Sci. Technol. B 21, 2060–2066 (2003) https://doi.org/10.1116/1.1605430

Abstract

View articletitled, Deposition of indium tin oxide films on polycarbonate substrates by using ion beam processes

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Submillimeter-wavelength plasma chemical diagnostics for semiconductor manufacturing

Eric C. Benck; Guerman Yu. Golubiatnikov; Gerald T. Fraser; Bing Ji; Stephen A. Motika; Eugene J. Karwacki

J. Vac. Sci. Technol. B 21, 2067–2075 (2003) https://doi.org/10.1116/1.1605431

Abstract

View articletitled, Submillimeter-wavelength plasma chemical diagnostics for semiconductor manufacturing

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Crystallization of amorphous silicon films by Cu-field aided rapid thermal annealing

Moon-Soo Kang; Young-Bae Kim; Jin-Yong Ahn; Duck-Kyun Choi

J. Vac. Sci. Technol. B 21, 2076–2079 (2003) https://doi.org/10.1116/1.1606465

Abstract

View articletitled, Crystallization of amorphous silicon films by Cu-field aided rapid thermal annealing

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Electrostatic potential for a hyperbolic probe tip near a semiconductor

R. M. Feenstra

J. Vac. Sci. Technol. B 21, 2080–2088 (2003) https://doi.org/10.1116/1.1606466

Abstract

View articletitled, Electrostatic potential for a hyperbolic probe tip near a semiconductor

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Fabrication of nanoscale gratings with reduced line edge roughness using nanoimprint lithography

Zhaoning Yu; Lei Chen; Wei Wu; Haixiong Ge; Stephen Y. Chou

J. Vac. Sci. Technol. B 21, 2089–2092 (2003) https://doi.org/10.1116/1.1609471

Abstract

View articletitled, Fabrication of nanoscale gratings with reduced line edge roughness using nanoimprint lithography

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Magnetic properties of Mn-implanted AlGaP alloys

M. E. Overberg; G. T. Thaler; R. M. Frazier; C. R. Abernathy; S. J. Pearton; R. Rairigh; J. Kelly; N. A. Theodoropoulou; A. F. Hebard; R. G. Wilson; J. M. Zavada

J. Vac. Sci. Technol. B 21, 2093–2097 (2003) https://doi.org/10.1116/1.1609473

Abstract

View articletitled, Magnetic properties of Mn-implanted AlGaP alloys

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Mechanisms of circular defects for shallow trench isolation oxide deposition

Jin Kun Lan; Ying Lang Wang; Chuan-Pu Liu; Chuen Guang Chao; Chyung Ay; Chi Wen Liu; Yi Lung Cheng

J. Vac. Sci. Technol. B 21, 2098–2104 (2003) https://doi.org/10.1116/1.1609475

Abstract

View articletitled, Mechanisms of circular defects for shallow trench isolation oxide deposition

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Effects of oxygen-flow rate on the characteristics of the ${ZrO}_{2}$ dielectric layers grown by metalorganic molecular beam epitaxy

Jang-Hyuk Hong; Woo-Jong Choi; Doo-Soo Kim; Jae-Min Myoung

J. Vac. Sci. Technol. B 21, 2105–2108 (2003) https://doi.org/10.1116/1.1609476

Abstract

View articletitled, Effects of oxygen-flow rate on the characteristics of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub></math> dielectric layers grown by metalorganic molecular beam epitaxy

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Ion-cutting of Si onto glass by pulsed and direct-current plasma immersion ion implantation

F. Lu; D. Qiao; M. Cai; P. K. L. Yu; S. S. Lau; R. K. Y. Fu; L. S. Hung; C. P. Li; P. K. Chu; H. C. Chien; Y. Liou

J. Vac. Sci. Technol. B 21, 2109–2113 (2003) https://doi.org/10.1116/1.1609477

Abstract

View articletitled, Ion-cutting of Si onto glass by pulsed and direct-current plasma immersion ion implantation

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Evolution of intrinsic stress in nanocrystalline-diamond film deposited by continuous $H^{+}$ ion bombardment

C. Z. Gu; X. Jiang

J. Vac. Sci. Technol. B 21, 2114–2119 (2003) https://doi.org/10.1116/1.1609479

Abstract

View articletitled, Evolution of intrinsic stress in nanocrystalline-diamond film deposited by continuous <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">H</mi><mrow><mi>+</mi></mrow></msup></math> ion bombardment

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Aluminum oxidation by a remote electron cyclotron resonance plasma in magnetic tunnel junctions

A. Thomas; H. Brückl; M. D. Sacher; J. Schmalhorst; G. Reiss

J. Vac. Sci. Technol. B 21, 2120–2122 (2003) https://doi.org/10.1116/1.1609480

Abstract

View articletitled, Aluminum oxidation by a remote electron cyclotron resonance plasma in magnetic tunnel junctions

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Influence of the high-temperature “firing” step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells

J. Hong; W. M. M. Kessels; W. J. Soppe; A. W. Weeber; W. M. Arnoldbik; M. C. M. van de Sanden

J. Vac. Sci. Technol. B 21, 2123–2132 (2003) https://doi.org/10.1116/1.1609481

Abstract

View articletitled, Influence of the high-temperature “firing” step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells

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Electrical characteristics of metal–insulator–semiconductor Schottky diodes using a photowashing treatment in ${Al}_{x} {Ga}_{1−x} As/InGaAs$ $(X=0.75)$ pseudomorphic high electron mobility transistors

Sang Youn Han; Kyoung Jin Choi; Jong-Lam Lee; Jae Kyoung Mun; Min Park; Haechon Kim

J. Vac. Sci. Technol. B 21, 2133–2137 (2003) https://doi.org/10.1116/1.1612514

Abstract

View articletitled, Electrical characteristics of metal–insulator–semiconductor Schottky diodes using a photowashing treatment in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As/InGaAs</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(X=0.75)</mtext></math> pseudomorphic high electron mobility transistors

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Fabrication of metallic tunnel junctions for the scanning single electron transistor atomic force microscope

P. Steinmann; K. A. Lister; J. M. R. Weaver

J. Vac. Sci. Technol. B 21, 2138–2141 (2003) https://doi.org/10.1116/1.1612931

Abstract

View articletitled, Fabrication of metallic tunnel junctions for the scanning single electron transistor atomic force microscope

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Highly selective and high rate ${SiO}_{2}$ etching using argon-added $C_{2} F_{4} / {CF}_{3} I$ plasma

H. Ohtake; H. Ishihara; T. Fuse; A. Koshiishi; S. Samukawa

J. Vac. Sci. Technol. B 21, 2142–2146 (2003) https://doi.org/10.1116/1.1612938

Abstract

View articletitled, Highly selective and high rate <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> etching using argon-added <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mn>4</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>3</mn></mrow></msub><mi mathvariant="normal" xmlns="">I</mi></math> plasma

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Enhanced growth of low-resistivity NiSi on epitaxial ${Si}_{0.7} {Ge}_{0.3}$ on (001)Si with a sacrificial amorphous Si interlayer

W. W. Wu; S. L. Cheng; S. W. Lee; L. J. Chen

J. Vac. Sci. Technol. B 21, 2147–2150 (2003) https://doi.org/10.1116/1.1609472

Abstract

View articletitled, Enhanced growth of low-resistivity NiSi on epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>0.7</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>0.3</mtext></mrow></msub></math> on (001)Si with a sacrificial amorphous Si interlayer

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Failure analysis of a cascade laser structure by electrostatic force microscopy

M. Azize; P. Girard; R. Teissier; A. N. Baranov; A. Joullié

J. Vac. Sci. Technol. B 21, 2151–2154 (2003) https://doi.org/10.1116/1.1609478

Abstract

View articletitled, Failure analysis of a cascade laser structure by electrostatic force microscopy

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Focused-ion-beam preparation of wedge-shaped cross sections and its application to observing $p–n$ junctions by electron holography

Zhouguang Wang; Takeharu Kato; Tsukasa Hirayama; Katsuhiro Sasaki; Hiroyasu Saka; Naoko Kato

J. Vac. Sci. Technol. B 21, 2155–2158 (2003) https://doi.org/10.1116/1.1612515

Abstract

View articletitled, Focused-ion-beam preparation of wedge-shaped cross sections and its application to observing <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p–n</mi></math> junctions by electron holography

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Highly selective reactive-ion etching using $CO / {NH}_{3} / Xe$ gases for microstructuring of Au, Pt, Cu, and 20% Fe–Ni

Takashi Abe; Youn Gi Hong; Masayoshi Esashi

J. Vac. Sci. Technol. B 21, 2159–2162 (2003) https://doi.org/10.1116/1.1612516

Abstract

View articletitled, Highly selective reactive-ion etching using <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">CO</mi><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">NH</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Xe</mi></math> gases for microstructuring of Au, Pt, Cu, and 20% Fe–Ni

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Dry etching characteristics of TiN film using ${Ar/CHF}_{3},$ ${Ar/Cl}_{2},$ and ${Ar/BCl}_{3}$ gas chemistries in an inductively coupled plasma

J. Tonotani; T. Iwamoto; F. Sato; K. Hattori; S. Ohmi; H. Iwai

J. Vac. Sci. Technol. B 21, 2163–2168 (2003) https://doi.org/10.1116/1.1612517

Abstract

View articletitled, Dry etching characteristics of TiN film using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ar/CHF</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">,</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ar/Cl</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">,</mi></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ar/BCl</mi><mrow><mn>3</mn></mrow></msub></math> gas chemistries in an inductively coupled plasma

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Characterization of CuCl nanocrystals in ${SiO}_{2}$ matrix fabricated by inductively coupled plasma-assisted sputtering deposition

Hiroki Kurisu; Kazutaka Nagoya; Naoko Yamada; Setsuo Yamamoto; Mitsuru Matsuura

J. Vac. Sci. Technol. B 21, 2169–2173 (2003) https://doi.org/10.1116/1.1612518

Abstract

View articletitled, Characterization of CuCl nanocrystals in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> matrix fabricated by inductively coupled plasma-assisted sputtering deposition

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Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas

X. Detter; R. Palla; I. Thomas-Boutherin; E. Pargon; G. Cunge; O. Joubert; L. Vallier

J. Vac. Sci. Technol. B 21, 2174–2183 (2003) https://doi.org/10.1116/1.1612932

Abstract

View articletitled, Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas

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Ba enrichment on the surface of oxide cathodes

B. M. Weon; A. van Dam; G. S. Park; C. H. Hwang; S. D. Han; I. W. Kim; S. K. Seol; Y. B. Kwon; C. S. Cho; J. H. Je; Y. Hwu; W.-L. Tsai; P. Ruterana

J. Vac. Sci. Technol. B 21, 2184–2187 (2003) https://doi.org/10.1116/1.1612933

Abstract

View articletitled, Ba enrichment on the surface of oxide cathodes

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Deep dry etching of borosilicate glass using fluorine-based high-density plasmas for microelectromechanical system fabrication

Takanori Ichiki; Yoshinari Sugiyama; Takekazu Ujiie; Yasuhiro Horiike

J. Vac. Sci. Technol. B 21, 2188–2192 (2003) https://doi.org/10.1116/1.1612935

Abstract

View articletitled, Deep dry etching of borosilicate glass using fluorine-based high-density plasmas for microelectromechanical system fabrication

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Effects of high-dose ${BF}_{2}^{+}$ implantation on the formation of Ti-germanosilicide on polycrystalline ${Si/Si}_{0.87} {Ge}_{0.13} / Si$ layers

Chan Woo Park; Seung-Yun Lee; Sang-Hoon Kim; Jin-Yeong Kang

J. Vac. Sci. Technol. B 21, 2193–2197 (2003) https://doi.org/10.1116/1.1612936

Abstract

View articletitled, Effects of high-dose <math xmlns="http://www.w3.org/1998/Math/MathML"><msubsup xmlns=""><mi mathvariant="normal">BF</mi><mrow><mn>2</mn></mrow><mrow><mi>+</mi></mrow></msubsup></math> implantation on the formation of Ti-germanosilicide on polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/Si</mi><mrow><mtext>0.87</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>0.13</mtext></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> layers

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Redeposition of etch products on sidewalls during ${SiO}_{2}$ etching in a fluorocarbon plasma. IV. Effects of substrate temperature in a ${CF}_{4}$ plasma

Jae-Ho Min; Sung-Wook Hwang; Gyeo-Re Lee; Sang Heup Moon

J. Vac. Sci. Technol. B 21, 2198–2204 (2003) https://doi.org/10.1116/1.1612939

Abstract

View articletitled, Redeposition of etch products on sidewalls during <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> etching in a fluorocarbon plasma. IV. Effects of substrate temperature in a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>4</mn></mrow></msub></math> plasma

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Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching

S. A. Vitale; B. A. Smith

J. Vac. Sci. Technol. B 21, 2205–2211 (2003) https://doi.org/10.1116/1.1609474

Abstract

View articletitled, Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching

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Electron field emission from boron nitride nanofilm and its application to graphite nanofiber

Chiharu Kimura; Tomohide Yamamoto; Shingo Funakawa; Masaaki Hirakawa; Hirohiko Murakami; Takashi Sugino

J. Vac. Sci. Technol. B 21, 2212–2216 (2003) https://doi.org/10.1116/1.1612930

Abstract

View articletitled, Electron field emission from boron nitride nanofilm and its application to graphite nanofiber

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BRIEF REPORTS AND COMMENTS

Use of polymethylmethacrylate for pattern transfer by ion beam etching: Improvement of etching homogeneity and patterning quality

Y. Koval; T. Borzenko; S. Dubonos

J. Vac. Sci. Technol. B 21, 2217–2219 (2003) https://doi.org/10.1116/1.1612934

Abstract

View articletitled, Use of polymethylmethacrylate for pattern transfer by ion beam etching: Improvement of etching homogeneity and patterning quality

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Inversion behavior in thermally oxidized $p- GaN$ metal–oxide–semiconductor capacitors

Yoshitaka Nakano; Tetsu Kachi; Takashi Jimbo

J. Vac. Sci. Technol. B 21, 2220–2222 (2003) https://doi.org/10.1116/1.1612937

Abstract

View articletitled, Inversion behavior in thermally oxidized <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-</mi><mi mathvariant="normal" xmlns="">GaN</mi></math> metal–oxide–semiconductor capacitors

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ERRATA

Erratum: “Silicon metal–oxide–semiconductor field effect transistor/field emission array fabricated using chemical mechanical polishing” [J. Vac. Sci. Technol. B 21, 500 (2003)]

Ching-yin Hong; Akintunde I. Akinwande

J. Vac. Sci. Technol. B 21, 2223 (2003) https://doi.org/10.1116/1.1603292

Abstract

View articletitled, Erratum: “Silicon metal–oxide–semiconductor field effect transistor/field emission array fabricated using chemical mechanical polishing” [J. Vac. Sci. Technol. B 21, 500 (2003)]

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