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J. Vac. Sci. Technol. B 21, 1187–1202 (2003) https://doi.org/10.1116/1.1579697

REGULAR ARTICLES

J. Vac. Sci. Technol. B 21, 1203–1209 (2003) https://doi.org/10.1116/1.1574053
J. Vac. Sci. Technol. B 21, 1210–1215 (2003) https://doi.org/10.1116/1.1574054
J. Vac. Sci. Technol. B 21, 1216–1223 (2003) https://doi.org/10.1116/1.1574045
J. Vac. Sci. Technol. B 21, 1224–1229 (2003) https://doi.org/10.1116/1.1574046
J. Vac. Sci. Technol. B 21, 1230–1239 (2003) https://doi.org/10.1116/1.1574047
J. Vac. Sci. Technol. B 21, 1240–1247 (2003) https://doi.org/10.1116/1.1574048
J. Vac. Sci. Technol. B 21, 1248–1253 (2003) https://doi.org/10.1116/1.1574049
J. Vac. Sci. Technol. B 21, 1254–1257 (2003) https://doi.org/10.1116/1.1574050
J. Vac. Sci. Technol. B 21, 1258–1264 (2003) https://doi.org/10.1116/1.1574051
J. Vac. Sci. Technol. B 21, 1265–1267 (2003) https://doi.org/10.1116/1.1574052
J. Vac. Sci. Technol. B 21, 1268–1272 (2003) https://doi.org/10.1116/1.1575249
J. Vac. Sci. Technol. B 21, 1273–1277 (2003) https://doi.org/10.1116/1.1575250
J. Vac. Sci. Technol. B 21, 1278–1285 (2003) https://doi.org/10.1116/1.1575251
J. Vac. Sci. Technol. B 21, 1286–1290 (2003) https://doi.org/10.1116/1.1580839
J. Vac. Sci. Technol. B 21, 1291–1296 (2003) https://doi.org/10.1116/1.1580840
J. Vac. Sci. Technol. B 21, 1297–1300 (2003) https://doi.org/10.1116/1.1580841
J. Vac. Sci. Technol. B 21, 1301–1305 (2003) https://doi.org/10.1116/1.1580842
J. Vac. Sci. Technol. B 21, 1306–1313 (2003) https://doi.org/10.1116/1.1585067
J. Vac. Sci. Technol. B 21, 1314–1317 (2003) https://doi.org/10.1116/1.1587142
J. Vac. Sci. Technol. B 21, 1318–1322 (2003) https://doi.org/10.1116/1.1585066
J. Vac. Sci. Technol. B 21, 1323–1328 (2003) https://doi.org/10.1116/1.1587141
J. Vac. Sci. Technol. B 21, 1329–1334 (2003) https://doi.org/10.1116/1.1587139
J. Vac. Sci. Technol. B 21, 1335–1343 (2003) https://doi.org/10.1116/1.1580843
J. Vac. Sci. Technol. B 21, 1344–1349 (2003) https://doi.org/10.1116/1.1587137
J. Vac. Sci. Technol. B 21, 1350–1356 (2003) https://doi.org/10.1116/1.1585068
J. Vac. Sci. Technol. B 21, 1357–1360 (2003) https://doi.org/10.1116/1.1587138
J. Vac. Sci. Technol. B 21, 1361–1363 (2003) https://doi.org/10.1116/1.1587140
J. Vac. Sci. Technol. B 21, 1364–1368 (2003) https://doi.org/10.1116/1.1591740
J. Vac. Sci. Technol. B 21, 1369–1374 (2003) https://doi.org/10.1116/1.1591739
J. Vac. Sci. Technol. B 21, 1375–1379 (2003) https://doi.org/10.1116/1.1591741
J. Vac. Sci. Technol. B 21, 1380–1383 (2003) https://doi.org/10.1116/1.1591743
J. Vac. Sci. Technol. B 21, 1384–1390 (2003) https://doi.org/10.1116/1.1591745
J. Vac. Sci. Technol. B 21, 1391–1402 (2003) https://doi.org/10.1116/1.1585065
J. Vac. Sci. Technol. B 21, 1403–1410 (2003) https://doi.org/10.1116/1.1591742
J. Vac. Sci. Technol. B 21, 1411–1414 (2003) https://doi.org/10.1116/1.1592806
J. Vac. Sci. Technol. B 21, 1415–1421 (2003) https://doi.org/10.1116/1.1592807
J. Vac. Sci. Technol. B 21, 1422–1427 (2003) https://doi.org/10.1116/1.1592808
J. Vac. Sci. Technol. B 21, 1428–1432 (2003) https://doi.org/10.1116/1.1593055
J. Vac. Sci. Technol. B 21, 1433–1436 (2003) https://doi.org/10.1116/1.1593056
J. Vac. Sci. Technol. B 21, 1437–1441 (2003) https://doi.org/10.1116/1.1593638
J. Vac. Sci. Technol. B 21, 1442–1448 (2003) https://doi.org/10.1116/1.1592810
J. Vac. Sci. Technol. B 21, 1449–1452 (2003) https://doi.org/10.1116/1.1592811
J. Vac. Sci. Technol. B 21, 1453–1458 (2003) https://doi.org/10.1116/1.1593639
J. Vac. Sci. Technol. B 21, 1459–1465 (2003) https://doi.org/10.1116/1.1593640
J. Vac. Sci. Technol. B 21, 1466–1471 (2003) https://doi.org/10.1116/1.1585064
J. Vac. Sci. Technol. B 21, 1472–1475 (2003) https://doi.org/10.1116/1.1582459
J. Vac. Sci. Technol. B 21, 1476–1481 (2003) https://doi.org/10.1116/1.1585069
J. Vac. Sci. Technol. B 21, 1482–1486 (2003) https://doi.org/10.1116/1.1591738
J. Vac. Sci. Technol. B 21, 1487–1490 (2003) https://doi.org/10.1116/1.1596214
J. Vac. Sci. Technol. B 21, 1491–1495 (2003) https://doi.org/10.1116/1.1591737
J. Vac. Sci. Technol. B 21, 1496–1500 (2003) https://doi.org/10.1116/1.1591744
J. Vac. Sci. Technol. B 21, 1501–1504 (2003) https://doi.org/10.1116/1.1596217

BRIEF REPORTS AND COMMENTS

J. Vac. Sci. Technol. B 21, 1505–1510 (2003) https://doi.org/10.1116/1.1592809
J. Vac. Sci. Technol. B 21, 1511–1512 (2003) https://doi.org/10.1116/1.1596215
J. Vac. Sci. Technol. B 21, 1513–1515 (2003) https://doi.org/10.1116/1.1596218

PAPERS FROM THE 15TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE AND THE 48TH INTERNATIONAL FIELD EMISSION SYMPOSIUM

Basic Field Emission Studies
J. Vac. Sci. Technol. B 21, 1519–1523 (2003) https://doi.org/10.1116/1.1591748
J. Vac. Sci. Technol. B 21, 1524–1527 (2003) https://doi.org/10.1116/1.1584471
J. Vac. Sci. Technol. B 21, 1528–1544 (2003) https://doi.org/10.1116/1.1573664
J. Vac. Sci. Technol. B 21, 1545–1549 (2003) https://doi.org/10.1116/1.1592530
J. Vac. Sci. Technol. B 21, 1550–1555 (2003) https://doi.org/10.1116/1.1593641
J. Vac. Sci. Technol. B 21, 1556–1559 (2003) https://doi.org/10.1116/1.1587133
Field Emission Arrays
J. Vac. Sci. Technol. B 21, 1560–1565 (2003) https://doi.org/10.1116/1.1596221
J. Vac. Sci. Technol. B 21, 1566–1569 (2003) https://doi.org/10.1116/1.1575759
J. Vac. Sci. Technol. B 21, 1570–1573 (2003) https://doi.org/10.1116/1.1573663
J. Vac. Sci. Technol. B 21, 1574–1580 (2003) https://doi.org/10.1116/1.1576764
J. Vac. Sci. Technol. B 21, 1581–1585 (2003) https://doi.org/10.1116/1.1565143
J. Vac. Sci. Technol. B 21, 1586–1588 (2003) https://doi.org/10.1116/1.1570852
J. Vac. Sci. Technol. B 21, 1589–1593 (2003) https://doi.org/10.1116/1.1569933
J. Vac. Sci. Technol. B 21, 1594–1597 (2003) https://doi.org/10.1116/1.1596219
J. Vac. Sci. Technol. B 21, 1598–1601 (2003) https://doi.org/10.1116/1.1569932
J. Vac. Sci. Technol. B 21, 1602–1606 (2003) https://doi.org/10.1116/1.1575760
Non-Carbon Thin-Film Cathodes
J. Vac. Sci. Technol. B 21, 1607–1611 (2003) https://doi.org/10.1116/1.1591749
J. Vac. Sci. Technol. B 21, 1612–1615 (2003) https://doi.org/10.1116/1.1584470
J. Vac. Sci. Technol. B 21, 1616–1617 (2003) https://doi.org/10.1116/1.1591752
Cathodoluminescence
J. Vac. Sci. Technol. B 21, 1618–1621 (2003) https://doi.org/10.1116/1.1587134
J. Vac. Sci. Technol. B 21, 1622–1628 (2003) https://doi.org/10.1116/1.1570011
Carbon-Based Cathodes: DLC, Thin Films, Nanotubes
J. Vac. Sci. Technol. B 21, 1629–1632 (2003) https://doi.org/10.1116/1.1569930
J. Vac. Sci. Technol. B 21, 1633–1639 (2003) https://doi.org/10.1116/1.1593642
J. Vac. Sci. Technol. B 21, 1640–1643 (2003) https://doi.org/10.1116/1.1592531
J. Vac. Sci. Technol. B 21, 1644–1647 (2003) https://doi.org/10.1116/1.1584472
J. Vac. Sci. Technol. B 21, 1648–1654 (2003) https://doi.org/10.1116/1.1591751
J. Vac. Sci. Technol. B 21, 1655–1659 (2003) https://doi.org/10.1116/1.1591750
J. Vac. Sci. Technol. B 21, 1660–1664 (2003) https://doi.org/10.1116/1.1580116
J. Vac. Sci. Technol. B 21, 1665–1670 (2003) https://doi.org/10.1116/1.1596432
J. Vac. Sci. Technol. B 21, 1671–1674 (2003) https://doi.org/10.1116/1.1592529
J. Vac. Sci. Technol. B 21, 1675–1679 (2003) https://doi.org/10.1116/1.1591746
J. Vac. Sci. Technol. B 21, 1680–1683 (2003) https://doi.org/10.1116/1.1580119
J. Vac. Sci. Technol. B 21, 1684–1687 (2003) https://doi.org/10.1116/1.1584473
J. Vac. Sci. Technol. B 21, 1688–1691 (2003) https://doi.org/10.1116/1.1593643
J. Vac. Sci. Technol. B 21, 1692–1699 (2003) https://doi.org/10.1116/1.1596222
J. Vac. Sci. Technol. B 21, 1700–1704 (2003) https://doi.org/10.1116/1.1580117
J. Vac. Sci. Technol. B 21, 1705–1709 (2003) https://doi.org/10.1116/1.1580115
J. Vac. Sci. Technol. B 21, 1710–1714 (2003) https://doi.org/10.1116/1.1591747
J. Vac. Sci. Technol. B 21, 1715–1719 (2003) https://doi.org/10.1116/1.1592532
J. Vac. Sci. Technol. B 21, 1720–1726 (2003) https://doi.org/10.1116/1.1596220
J. Vac. Sci. Technol. B 21, 1727–1729 (2003) https://doi.org/10.1116/1.1580118
J. Vac. Sci. Technol. B 21, 1730–1733 (2003) https://doi.org/10.1116/1.1569931
J. Vac. Sci. Technol. B 21, 1734–1737 (2003) https://doi.org/10.1116/1.1587136
J. Vac. Sci. Technol. B 21, 1738–1741 (2003) https://doi.org/10.1116/1.1587135

PAPERS FROM THE 30TH CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES

Magnetic Materials and Spintronics
J. Vac. Sci. Technol. B 21, 1745–1748 (2003) https://doi.org/10.1116/1.1588648
J. Vac. Sci. Technol. B 21, 1749–1755 (2003) https://doi.org/10.1116/1.1593648
J. Vac. Sci. Technol. B 21, 1756–1759 (2003) https://doi.org/10.1116/1.1588649
J. Vac. Sci. Technol. B 21, 1760–1764 (2003) https://doi.org/10.1116/1.1593649
Si-Dielectric Interfaces
J. Vac. Sci. Technol. B 21, 1765–1772 (2003) https://doi.org/10.1116/1.1589516
J. Vac. Sci. Technol. B 21, 1773–1776 (2003) https://doi.org/10.1116/1.1585071
J. Vac. Sci. Technol. B 21, 1777–1782 (2003) https://doi.org/10.1116/1.1589518
J. Vac. Sci. Technol. B 21, 1783–1791 (2003) https://doi.org/10.1116/1.1593646
J. Vac. Sci. Technol. B 21, 1792–1797 (2003) https://doi.org/10.1116/1.1593647
J. Vac. Sci. Technol. B 21, 1798–1803 (2003) https://doi.org/10.1116/1.1593057
GaN and Related Materials
J. Vac. Sci. Technol. B 21, 1804–1811 (2003) https://doi.org/10.1116/1.1589511
J. Vac. Sci. Technol. B 21, 1812–1817 (2003) https://doi.org/10.1116/1.1589513
J. Vac. Sci. Technol. B 21, 1818–1821 (2003) https://doi.org/10.1116/1.1588647
J. Vac. Sci. Technol. B 21, 1822–1824 (2003) https://doi.org/10.1116/1.1585076
J. Vac. Sci. Technol. B 21, 1825–1827 (2003) https://doi.org/10.1116/1.1585078
J. Vac. Sci. Technol. B 21, 1828–1838 (2003) https://doi.org/10.1116/1.1585077
J. Vac. Sci. Technol. B 21, 1839–1843 (2003) https://doi.org/10.1116/1.1589514
J. Vac. Sci. Technol. B 21, 1844–1855 (2003) https://doi.org/10.1116/1.1589520
J. Vac. Sci. Technol. B 21, 1856–1862 (2003) https://doi.org/10.1116/1.1593645
J. Vac. Sci. Technol. B 21, 1863–1869 (2003) https://doi.org/10.1116/1.1589512
Carbides and Other Wide-Bandgap Materials
J. Vac. Sci. Technol. B 21, 1870–1875 (2003) https://doi.org/10.1116/1.1585073
J. Vac. Sci. Technol. B 21, 1876–1880 (2003) https://doi.org/10.1116/1.1589515
J. Vac. Sci. Technol. B 21, 1881–1885 (2003) https://doi.org/10.1116/1.1588650
J. Vac. Sci. Technol. B 21, 1886–1890 (2003) https://doi.org/10.1116/1.1585072
III-V and II-VI Semiconductors
J. Vac. Sci. Technol. B 21, 1891–1895 (2003) https://doi.org/10.1116/1.1588642
J. Vac. Sci. Technol. B 21, 1896–1902 (2003) https://doi.org/10.1116/1.1589519
J. Vac. Sci. Technol. B 21, 1903–1907 (2003) https://doi.org/10.1116/1.1588643
J. Vac. Sci. Technol. B 21, 1908–1914 (2003) https://doi.org/10.1116/1.1589522
J. Vac. Sci. Technol. B 21, 1915–1919 (2003) https://doi.org/10.1116/1.1588646
J. Vac. Sci. Technol. B 21, 1920–1923 (2003) https://doi.org/10.1116/1.1588645
J. Vac. Sci. Technol. B 21, 1924–1927 (2003) https://doi.org/10.1116/1.1589521
J. Vac. Sci. Technol. B 21, 1928–1935 (2003) https://doi.org/10.1116/1.1588641
J. Vac. Sci. Technol. B 21, 1936–1939 (2003) https://doi.org/10.1116/1.1588644
J. Vac. Sci. Technol. B 21, 1940–1944 (2003) https://doi.org/10.1116/1.1589517
J. Vac. Sci. Technol. B 21, 1945–1952 (2003) https://doi.org/10.1116/1.1585075
J. Vac. Sci. Technol. B 21, 1953–1958 (2003) https://doi.org/10.1116/1.1593644
J. Vac. Sci. Technol. B 21, 1959–1962 (2003) https://doi.org/10.1116/1.1585074
J. Vac. Sci. Technol. B 21, L1–L4 (2003) https://doi.org/10.1116/1.1585070
J. Vac. Sci. Technol. B 21, L5–L7 (2003) https://doi.org/10.1116/1.1596216
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