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March 2003

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

ARTICLES

Design of a shallow thermally stable ohmic contact to p-type InGaSb

S. H. Wang; S. E. Mohney; B. A. Hull; B. R. Bennett

J. Vac. Sci. Technol. B 21, 633–640 (2003) https://doi.org/10.1116/1.1545731

Abstract

View articletitled, Design of a shallow thermally stable ohmic contact to p-type InGaSb

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Effects of KrF (248 nm) excimer laser irradiation on electrical and optical properties of GaN:Mg

Dong-Joon Kim; Hyun-Min Kim; Myung-Geun Han; Yong-Tae Moon; Seonghoon Lee; Seong-Ju Park

J. Vac. Sci. Technol. B 21, 641–644 (2003) https://doi.org/10.1116/1.1545732

Abstract

View articletitled, Effects of KrF (248 nm) excimer laser irradiation on electrical and optical properties of GaN:Mg

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Characterization of vapor deposited poly (ethylene glycol) films on silicon surfaces for surface modification of microfluidic systems

Ketul C. Popat; Robert W. Johnson; Tejal A. Desai

J. Vac. Sci. Technol. B 21, 645–654 (2003) https://doi.org/10.1116/1.1545733

Abstract

View articletitled, Characterization of vapor deposited poly (ethylene glycol) films on silicon surfaces for surface modification of microfluidic systems

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Modeling the impact of photoresist trim etch process on photoresist surface roughness

Shahid Rauf; Phillip J. Stout; Jonathan Cobb

J. Vac. Sci. Technol. B 21, 655–659 (2003) https://doi.org/10.1116/1.1545735

Abstract

View articletitled, Modeling the impact of photoresist trim etch process on photoresist surface roughness

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Large area direct nanoimprinting of ${SiO}_{2} - {TiO}_{2}$ gel gratings for optical applications

Mingtao Li; Hua Tan; Lei Chen; Jian Wang; Stephen Y. Chou

J. Vac. Sci. Technol. B 21, 660–663 (2003) https://doi.org/10.1116/1.1545736

Abstract

View articletitled, Large area direct nanoimprinting of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub></math> gel gratings for optical applications

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Silicon nanowire with programmable conductivity analyzed by scanning Maxwell-stress microscopy

Takashi Matsukawa; Seigo Kanemaru; Meishoku Masahara; Masayoshi Nagao; Hisao Tanoue; Junji Itoh

J. Vac. Sci. Technol. B 21, 664–669 (2003) https://doi.org/10.1116/1.1545737

Abstract

View articletitled, Silicon nanowire with programmable conductivity analyzed by scanning Maxwell-stress microscopy

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Properties of ZnO-doped ${Zr}_{0.8} {Sn}_{0.2} {TiO}_{4}$ thin films by rf sputtering

Cheng-Liang Huang; Cheng-Shing Hsu

J. Vac. Sci. Technol. B 21, 670–676 (2003) https://doi.org/10.1116/1.1545751

Abstract

View articletitled, Properties of ZnO-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mtext>0.8</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sn</mi><mrow><mtext>0.2</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>4</mn></mrow></msub></math> thin films by rf sputtering

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Stability improvement of deuterated amorphous silicon thin-film transistors characterized by modified Schottky-contact gated-four-probe method

Sheng-Da Liu; An Shih; Shen-De Chen; Si-Chen Lee

J. Vac. Sci. Technol. B 21, 677–682 (2003) https://doi.org/10.1116/1.1545752

Abstract

View articletitled, Stability improvement of deuterated amorphous silicon thin-film transistors characterized by modified Schottky-contact gated-four-probe method

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Cell behavior on lithographically defined nanostructured substrates

Ana I. Teixeira; George A. Abrams; Christopher J. Murphy; Paul F. Nealey

J. Vac. Sci. Technol. B 21, 683–687 (2003) https://doi.org/10.1116/1.1545753

Abstract

View articletitled, Cell behavior on lithographically defined nanostructured substrates

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Room-temperature nanoimprint and nanotransfer printing using hydrogen silsequioxane

S. Matsui; Y. Igaku; H. Ishigaki; J. Fujita; M. Ishida; Y. Ochiai; H. Namatsu; M. Komuro

J. Vac. Sci. Technol. B 21, 688–692 (2003) https://doi.org/10.1116/1.1545754

Abstract

View articletitled, Room-temperature nanoimprint and nanotransfer printing using hydrogen silsequioxane

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Fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in a parallel electron-beam lithography system

K. B. K. Teo; M. Chhowalla; G. A. J. Amaratunga; W. I. Milne; P. Legagneux; G. Pirio; L. Gangloff; D. Pribat; V. Semet; Vu Thien Binh; W. H. Bruenger; J. Eichholz; H. Hanssen; D. Friedrich; S. B. Lee; D. G. Hasko; H. Ahmed

J. Vac. Sci. Technol. B 21, 693–697 (2003) https://doi.org/10.1116/1.1545755

Abstract

View articletitled, Fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in a parallel electron-beam lithography system

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Correlation between current–voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on $n- GaN$ grown by metalorganic chemical vapor deposition

Kenji Shiojima; Tetsuya Suemitsu

J. Vac. Sci. Technol. B 21, 698–705 (2003) https://doi.org/10.1116/1.1547735

Abstract

View articletitled, Correlation between current–voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n-</mi><mi mathvariant="normal" xmlns="">GaN</mi></math> grown by metalorganic chemical vapor deposition

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Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation

Chyiu Hyia Poon; Byung Jin Cho; Yong Feng Lu; Mousumi Bhat; Alex See

J. Vac. Sci. Technol. B 21, 706–709 (2003) https://doi.org/10.1116/1.1547747

Abstract

View articletitled, Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation

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Electron transport in a submicron-scale AlGaAs/GaAs field-effect transistor with InAs nanodots as the floating gate

Kazuto Koike; Shigehiko Sasa; Masataka Inoue; Mitsuaki Yano

J. Vac. Sci. Technol. B 21, 710–713 (2003) https://doi.org/10.1116/1.1547748

Abstract

View articletitled, Electron transport in a submicron-scale AlGaAs/GaAs field-effect transistor with InAs nanodots as the floating gate

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Quantitative method of image analysis when drift is present in a scanning probe microscope

S. H. Huerth; H. D. Hallen

J. Vac. Sci. Technol. B 21, 714–718 (2003) https://doi.org/10.1116/1.1553972

Abstract

View articletitled, Quantitative method of image analysis when drift is present in a scanning probe microscope

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Fabrication and characterization of silicon nanocrystals by thermal oxidation of a-Si:H films in air

Sandeep Kohli; Jeremy A. Theil; Rick. D. Snyder; Christopher D. Rithner; Peter K. Dorhout

J. Vac. Sci. Technol. B 21, 719–728 (2003) https://doi.org/10.1116/1.1547749

Abstract

View articletitled, Fabrication and characterization of silicon nanocrystals by thermal oxidation of a-Si:H films in air

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Carrier spilling revisited: On-bevel junction behavior of different electrical depth profiling techniques

T. Clarysse; P. Eyben; N. Duhayon; M. W. Xu; W. Vandervorst

J. Vac. Sci. Technol. B 21, 729–736 (2003) https://doi.org/10.1116/1.1547723

Abstract

View articletitled, Carrier spilling revisited: On-bevel junction behavior of different electrical depth profiling techniques

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Bias-induced junction displacements in scanning spreading resistance microscopy and scanning capacitance microscopy

P. Eyben; N. Duhayon; T. Clarysse; W. Vandervorst

J. Vac. Sci. Technol. B 21, 737–743 (2003) https://doi.org/10.1116/1.1547724

Abstract

View articletitled, Bias-induced junction displacements in scanning spreading resistance microscopy and scanning capacitance microscopy

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Identification of artifacts in Auger electron spectroscopy due to surface topography

A. Gelsthorpe; M. M. El-Gomati

J. Vac. Sci. Technol. B 21, 744–747 (2003) https://doi.org/10.1116/1.1545719

Abstract

View articletitled, Identification of artifacts in Auger electron spectroscopy due to surface topography

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High-resolution complex structures for two-dimensional photonic crystals realized by x-ray diffraction lithography

L. Businaro; F. Romanato; P. Candeloro; E. Di Fabrizio; M. Patrini; M. Galli; C. Andreani; A. Passaseo; M. De Vittorio

J. Vac. Sci. Technol. B 21, 748–753 (2003) https://doi.org/10.1116/1.1547726

Abstract

View articletitled, High-resolution complex structures for two-dimensional photonic crystals realized by x-ray diffraction lithography

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Structural study of amorphous vanadium oxide films for thin film microbattery

Han-Ki Kim; Tae-Yeon Seong; Young Soo Yoon

J. Vac. Sci. Technol. B 21, 754–759 (2003) https://doi.org/10.1116/1.1547746

Abstract

View articletitled, Structural study of amorphous vanadium oxide films for thin film microbattery

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Temperature-dependent characteristics of an ${Al}_{0.2} {Ga}_{0.8} {As/In}_{0.22} {Ga}_{0.78}$ As pseudomorphic double heterojunction modulation doped field-effect transistor with a GaAs/AlGaAs superlattice buffer layer

Yih-Juan Li; Wei-Chou Hsu; Sheng-Yung Wang

J. Vac. Sci. Technol. B 21, 760–762 (2003) https://doi.org/10.1116/1.1553971

Abstract

View articletitled, Temperature-dependent characteristics of an <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>0.2</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.8</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">As/In</mi><mrow><mtext>0.22</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.78</mtext></mrow></msub></math>As pseudomorphic double heterojunction modulation doped field-effect transistor with a GaAs/AlGaAs superlattice buffer layer

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Fabrication of monodomain alumina pore arrays with an interpore distance smaller than the lattice constant of the imprint stamp

J. Choi; K. Nielsch; M. Reiche; R. B. Wehrspohn; U. Gösele

J. Vac. Sci. Technol. B 21, 763–766 (2003) https://doi.org/10.1116/1.1556397

Abstract

View articletitled, Fabrication of monodomain alumina pore arrays with an interpore distance smaller than the lattice constant of the imprint stamp

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Study of titanium silicide formation using spike anneal for integrated chip manufacturing

C. C. Tan; L. Lu; C. W. Lai; A. See; L. H. Chan

J. Vac. Sci. Technol. B 21, 767–774 (2003) https://doi.org/10.1116/1.1559172

Abstract

View articletitled, Study of titanium silicide formation using spike anneal for integrated chip manufacturing

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Single electron transistors with ${Nb/AlO}_{x} / Nb$ junctions

R. Dolata; H. Scherer; A. B. Zorin; J. Niemeyer

J. Vac. Sci. Technol. B 21, 775–780 (2003) https://doi.org/10.1116/1.1560213

Abstract

View articletitled, Single electron transistors with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Nb/AlO</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Nb</mi></math> junctions

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Influence of hydrogen plasma treatment on boron implanted junctions in silicon

Sanjay Rangan; Mark Horn; S. Ashok; Y. N. Mohapatra

J. Vac. Sci. Technol. B 21, 781–784 (2003) https://doi.org/10.1116/1.1560331

Abstract

View articletitled, Influence of hydrogen plasma treatment on boron implanted junctions in silicon

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Improvement of mechanical properties of nanometer period multilayer films at interfaces of each layer

Shojiro Miyake

J. Vac. Sci. Technol. B 21, 785–789 (2003) https://doi.org/10.1116/1.1560217

Abstract

View articletitled, Improvement of mechanical properties of nanometer period multilayer films at interfaces of each layer

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Sub-0.1 μm nitride hard mask open process without precuring the ArF photoresist

J. Kim; Y. S. Chae; W. S. Lee; J. W. Shon; C. J. Kang; W. S. Han; J. T. Moon

J. Vac. Sci. Technol. B 21, 790–794 (2003) https://doi.org/10.1116/1.1563626

Abstract

View articletitled, Sub-0.1 μm nitride hard mask open process without precuring the ArF photoresist

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NiAuGeAu ohmic contacts for a planar InP-based high electron mobility transistor structure with suppressed drain conductance frequency dispersion

Tomoyuki Arai; Ken Sawada; Naoki Hara

J. Vac. Sci. Technol. B 21, 795–799 (2003) https://doi.org/10.1116/1.1563251

Abstract

View articletitled, NiAuGeAu ohmic contacts for a planar InP-based high electron mobility transistor structure with suppressed drain conductance frequency dispersion

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Dry etching of ZnO films and plasma-induced damage to optical properties

J. S. Park; H. J. Park; Y. B. Hahn; G.-C. Yi; A. Yoshikawa

J. Vac. Sci. Technol. B 21, 800–803 (2003) https://doi.org/10.1116/1.1563252

Abstract

View articletitled, Dry etching of ZnO films and plasma-induced damage to optical properties

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Multilayer diffusion barrier for copper metallization using a thin interlayer metal $(M = Ru,$ Cr, and Zr) between two TiN films

Soo-Hyun Kim; Ki Tae Nam; Arindom Datta; Hyun-Mi Kim; Ki-Bum Kim; Dae-Hwan Kang

J. Vac. Sci. Technol. B 21, 804–813 (2003) https://doi.org/10.1116/1.1562645

Abstract

View articletitled, Multilayer diffusion barrier for copper metallization using a thin interlayer metal <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">M</mi><mi xmlns="">=</mi><mi mathvariant="normal" xmlns="">Ru</mi><mi xmlns="">,</mi></math> Cr, and Zr) between two TiN films

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Optical properties of thin film ${Cr}_{x} N_{y} - {CrO}_{x} N_{y}$ multilayer films for 157 nm optical lithography

Philip D. Rack; Matthew Lassiter; Anatoli Bourov; Dennis Baiko; Bruce Smith

J. Vac. Sci. Technol. B 21, 814–817 (2003) https://doi.org/10.1116/1.1563253

Abstract

View articletitled, Optical properties of thin film <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>y</mi></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">CrO</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>y</mi></mrow></msub></math> multilayer films for 157 nm optical lithography

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Patterning ${SiO}_{2}$ thin films using synchrotron radiation stimulated etching with a Co contact mask

Changshun Wang; Sam Dylan Moré; Zhihong Wang; Shusaku Yamamura; Yoichi Nonogaki; Tsuneo Urisu

J. Vac. Sci. Technol. B 21, 818–822 (2003) https://doi.org/10.1116/1.1563256

Abstract

View articletitled, Patterning <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> thin films using synchrotron radiation stimulated etching with a Co contact mask

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Development of an electron-beam lithography system for high accuracy masks

H. Kawano; H. Ito; K. Mizuno; T. Matsuzaka; K. Kawasaki; N. Saitou; H. Ohta; Y. Sohda

J. Vac. Sci. Technol. B 21, 823–827 (2003) https://doi.org/10.1116/1.1547725

Abstract

View articletitled, Development of an electron-beam lithography system for high accuracy masks

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Integrated equipment-feature modeling investigation of fluorocarbon plasma etching of ${SiO}_{2}$ and photoresist

Da Zhang; Shahid Rauf; Terry G. Sparks; Peter L. G. Ventzek

J. Vac. Sci. Technol. B 21, 828–836 (2003) https://doi.org/10.1116/1.1562637

Abstract

View articletitled, Integrated equipment-feature modeling investigation of fluorocarbon plasma etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> and photoresist

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Crystallization and pyroelectric effect of semiconducting YBaCuO thin films deposited at different temperatures

Ali Yildiz; Donald P. Butler; Zeynep Çelik-Butler; Choong-Un Kim

J. Vac. Sci. Technol. B 21, 837–842 (2003) https://doi.org/10.1116/1.1562638

Abstract

View articletitled, Crystallization and pyroelectric effect of semiconducting YBaCuO thin films deposited at different temperatures

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Inductively coupled plasma reactive ion etching of GaInAsSb and AlGaAsSb for quaternary antimonide multiple interconnected module thermophotovoltaics

G. M. Peake; R. J. Shul; C. I. H. Ashby; J. G. Cederberg; M. J. Hafich; R. M. Biefeld; M. N. Palmisiano

J. Vac. Sci. Technol. B 21, 843–847 (2003) https://doi.org/10.1116/1.1562639

Abstract

View articletitled, Inductively coupled plasma reactive ion etching of GaInAsSb and AlGaAsSb for quaternary antimonide multiple interconnected module thermophotovoltaics

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Properties of reactive-sputtered ${Ti}_{1−x}$ ${Al}_{x} N$ films for complementary metal–oxide–semiconductor silicon storage node electrode diffusion barriers

Sam-Dong Kim; Jin-Koo Rhee; Hyung-Moo Park

J. Vac. Sci. Technol. B 21, 848–857 (2003) https://doi.org/10.1116/1.1562640

Abstract

View articletitled, Properties of reactive-sputtered <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> films for complementary metal–oxide–semiconductor silicon storage node electrode diffusion barriers

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Improving the quality of electroplated copper films by rapid thermal annealing

Shih-Chieh Chang; Jia-Min Shieh; Bau-Tong Dai; Ming-Shiann Feng; Ying-Lang Wang

J. Vac. Sci. Technol. B 21, 858–861 (2003) https://doi.org/10.1116/1.1562641

Abstract

View articletitled, Improving the quality of electroplated copper films by rapid thermal annealing

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Applications of micro-Raman spectroscopy in salicide characterization for Si device fabrication

F. F. Zhao; S. Y. Chen; Z. X. Shen; X. S. Gao; J. Z. Zheng; A. K. See; L. H. Chan

J. Vac. Sci. Technol. B 21, 862–867 (2003) https://doi.org/10.1116/1.1562642

Abstract

View articletitled, Applications of micro-Raman spectroscopy in salicide characterization for Si device fabrication

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Experimental studies of the cap structure of single-walled carbon nanotubes

Kenneth A. Dean; Babu R. Chalamala

J. Vac. Sci. Technol. B 21, 868–871 (2003) https://doi.org/10.1116/1.1559171

Abstract

View articletitled, Experimental studies of the cap structure of single-walled carbon nanotubes

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Analysis of the I–V characteristics of Al/4H-SiC Schottky diodes

Jingyan Zhang; William R. Harrell

J. Vac. Sci. Technol. B 21, 872–878 (2003) https://doi.org/10.1116/1.1560249

Abstract

View articletitled, Analysis of the I–V characteristics of Al/4H-SiC Schottky diodes

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Organic modified Schottky contacts: Barrier height engineering and chemical stability

T. U. Kampen; S. Park; D. R. T. Zahn

J. Vac. Sci. Technol. B 21, 879–882 (2003) https://doi.org/10.1116/1.1562636

Abstract

View articletitled, Organic modified Schottky contacts: Barrier height engineering and chemical stability

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Growth and characterization of modulation-doped double barrier quantum well infrared photodetectors

E. Luna; A. Guzmán; J. L. Sánchez-Rojas; J. M. G. Tijero; R. Hey; J. Hernando; E. Muñoz

J. Vac. Sci. Technol. B 21, 883–887 (2003) https://doi.org/10.1116/1.1562643

Abstract

View articletitled, Growth and characterization of modulation-doped double barrier quantum well infrared photodetectors

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Characterization of different-Al-content ${Al}_{x} {Ga}_{1−x} N/GaN$ heterostructures and high-electron-mobility transistors on sapphire

S. Arulkumaran; T. Egawa; H. Ishikawa; T. Jimbo

J. Vac. Sci. Technol. B 21, 888–894 (2003) https://doi.org/10.1116/1.1556398

Abstract

View articletitled, Characterization of different-Al-content <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N/GaN</mi></math> heterostructures and high-electron-mobility transistors on sapphire

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Role of $O (^{1} D)$ in the oxidation of Si(100)

Tiffany Kaspar; Allan Tuan; Russell Tonkyn; Wayne P. Hess; J. W. Rogers, Jr.; Yoshi Ono

J. Vac. Sci. Technol. B 21, 895–899 (2003) https://doi.org/10.1116/1.1563254

Abstract

View articletitled, Role of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">O</mi><msup xmlns=""><mi>(</mi><mrow><mn>1</mn></mrow></msup><mi xmlns="">D)</mi></math> in the oxidation of Si(100)

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Low-loss InP-based photonic-crystal waveguides etched with ${Ar/Cl}_{2}$ chemically assisted ion beam etching

M. Mulot; S. Anand; M. Swillo; M. Qiu; B. Jaskorzynska; A. Talneau

J. Vac. Sci. Technol. B 21, 900–903 (2003) https://doi.org/10.1116/1.1563257

Abstract

View articletitled, Low-loss InP-based photonic-crystal waveguides etched with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ar/Cl</mi><mrow><mn>2</mn></mrow></msub></math> chemically assisted ion beam etching

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Chemical topography analyses of silicon gates etched in ${HBr/Cl}_{2} {/O}_{2}$ and ${HBr/Cl}_{2} {/O}_{2} {/CF}_{4}$ high density plasmas

L. Vallier; J. Foucher; X. Detter; E. Pargon; O. Joubert; G. Cunge; T. Lill

J. Vac. Sci. Technol. B 21, 904–911 (2003) https://doi.org/10.1116/1.1563255

Abstract

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BRIEF REPORTS AND COMMENTS

Deep reactive ion etching characteristics of a macromachined chemical reactor

R. S. Besser; W. C. Shin

J. Vac. Sci. Technol. B 21, 912–915 (2003) https://doi.org/10.1116/1.1560162

Abstract

View articletitled, Deep reactive ion etching characteristics of a macromachined chemical reactor

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Comparative measurements of the piezoelectric coefficient of a lead zirconate titanate film by piezoresponse force microscopy using electrically characterized tips

Heh-Nan Lin; Sy-Hann Chen; Shu-Te Ho; Ping-Ren Chen; I-Nan Lin

J. Vac. Sci. Technol. B 21, 916–918 (2003) https://doi.org/10.1116/1.1562644

Abstract

View articletitled, Comparative measurements of the piezoelectric coefficient of a lead zirconate titanate film by piezoresponse force microscopy using electrically characterized tips

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LETTERS

Contact resistance of newly proposed RuTiN and RuTiO diffusion barriers for future high-density memory capacitors

Dong-Soo Yoon; Jae Sung Roh

J. Vac. Sci. Technol. B 21, 919–922 (2003) https://doi.org/10.1116/1.1545734

Abstract

View articletitled, Contact resistance of newly proposed RuTiN and RuTiO diffusion barriers for future high-density memory capacitors

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