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Comparison of atomic force microscopy imaging methods and roughness determinations for a highly polished quartz surface

Eleni Dokou; Lanping Zhang; Mark A. Barteau

J. Vac. Sci. Technol. B 20, 2183–2186 (2002) https://doi.org/10.1116/1.1513633

Abstract

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Initial oxidation phenomena of heavily phosphorus-doped silicon in dry oxygen

Y. Kamiura; K. Hasegawa; Y. Sano; Y. Mizokawa; K. Kawamoto

J. Vac. Sci. Technol. B 20, 2187–2191 (2002) https://doi.org/10.1116/1.1513792

Abstract

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Silicon oxide contact hole etching employing an environmentally benign process

Kazushi Fujita; Masaru Hori; Toshio Goto; Masafumi Ito

J. Vac. Sci. Technol. B 20, 2192–2198 (2002) https://doi.org/10.1116/1.1513632

Abstract

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Simulations and experiments of etching of silicon in HBr plasmas for high aspect ratio features

Helen H. Hwang; M. Meyyappan; G. S. Mathad; R. Ranade

J. Vac. Sci. Technol. B 20, 2199–2205 (2002) https://doi.org/10.1116/1.1513621

Abstract

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Resist distribution effect of spin coating

Sang-Kon Kim; Ji-Yong Yoo; Hye-Keun Oh

J. Vac. Sci. Technol. B 20, 2206–2209 (2002) https://doi.org/10.1116/1.1513582

Abstract

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Reflection high-energy electron diffraction observation of the dynamics of semiconductor quantum dot formation and decay

P. Finnie; B. J. Riel; Z. R. Wasilewski

J. Vac. Sci. Technol. B 20, 2210–2213 (2002) https://doi.org/10.1116/1.1515912

Abstract

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Improved surface treatments for recycled (100) GaAs substrates in view of molecular-beam epitaxy growth: Auger electron spectroscopy, Raman, and secondary ion mass spectrometry analyses

Fabienne Négri; Eléna Bedel-Pereira

J. Vac. Sci. Technol. B 20, 2214–2218 (2002) https://doi.org/10.1116/1.1515908

Abstract

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Comparison of in situ and ex situ plasma-treated metalorganic chemical vapor deposition titanium nitride thin films

Boon Kiat Lim; Hun Sub Park; Alex K. H. See; Er Zhuang Liu; Shao Hui Wu

J. Vac. Sci. Technol. B 20, 2219–2224 (2002) https://doi.org/10.1116/1.1515911

Abstract

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Effect of implant oxide on ultrashallow junction formation

R. Lindsay; A. Lauwers; J. Frühauf; M. de Potter; K. Maex

J. Vac. Sci. Technol. B 20, 2225–2228 (2002) https://doi.org/10.1116/1.1515909

Abstract

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Polymer thickness effects on Bosch etch profiles

C. J. D. Craigie; T. Sheehan; V. N. Johnson; S. L. Burkett; A. J. Moll; W. B. Knowlton

J. Vac. Sci. Technol. B 20, 2229–2232 (2002) https://doi.org/10.1116/1.1515910

Abstract

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Leveling effects of copper electrolytes with hybrid-mode additives

Kun-Cheng Lin; Jia-Min Shieh; Shih-Chieh Chang; Bau-Tong Dai; Chia-Fu Chen; Ming-Shiann Feng; Ying-Hao Li

J. Vac. Sci. Technol. B 20, 2233–2237 (2002) https://doi.org/10.1116/1.1517262

Abstract

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Study of focused ion beam response of GaAs in the nanoscale regime

A. Lugstein; B. Basnar; E. Bertagnolli

J. Vac. Sci. Technol. B 20, 2238–2242 (2002) https://doi.org/10.1116/1.1517261

Abstract

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Influence of the surface Si/buried oxide interface on extended defect evolution in silicon-on-insulator scaled to 300 Å

A. F. Saavedra; J. Frazer; K. S. Jones; I. Avci; S. K. Earles; M. E. Law; E. C. Jones

J. Vac. Sci. Technol. B 20, 2243–2247 (2002) https://doi.org/10.1116/1.1517410

Abstract

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Submicron pattern transfer to binary semiconductors via micromolding in capillaries

Dario Pisignano; Giuseppe Gigli; Paolo Visconti; Anna Zocco; Alessio Perrone; Roberto Cingolani

J. Vac. Sci. Technol. B 20, 2248–2251 (2002) https://doi.org/10.1116/1.1517263

Abstract

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Dry etching of GaP with emphasis on selective etching over AlGaP

J. H. Epple; C. Sanchez; T. Chung; K. Y. Cheng; K. C. Hsieh

J. Vac. Sci. Technol. B 20, 2252–2255 (2002) https://doi.org/10.1116/1.1517260

Abstract

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Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy

D. Huang; M. A. Reshchikov; P. Visconti; F. Yun; A. A. Baski; T. King; H. Morkoç; J. Jasinski; Z. Liliental-Weber; C. W. Litton

J. Vac. Sci. Technol. B 20, 2256–2264 (2002) https://doi.org/10.1116/1.1518969

Abstract

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Cryogenic cleavage used in gold substrate production

Jakub Mazurkiewicz; Freya J. Mearns; Dusan Losic; Laura Weeks; Eric R. Waclawik; Craig T. Rogers; Joseph G. Shapter; J. Justin Gooding

J. Vac. Sci. Technol. B 20, 2265–2270 (2002) https://doi.org/10.1116/1.1518968

Abstract

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Beam-focusing characteristics of the diamond-film field emission arrays with parallel emitter, gates, and in-plane lens

Baoqing Zeng; Yang Liu; Zhonghai Yang; Shangjie Qian; Chongfeng Yang

J. Vac. Sci. Technol. B 20, 2271–2274 (2002) https://doi.org/10.1116/1.1518970

Abstract

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Plasma assisted deposition of nanocrystalline BCN thin films and property characterization

Z. X. Cao; L. M. Liu; H. Oechsner

J. Vac. Sci. Technol. B 20, 2275–2280 (2002) https://doi.org/10.1116/1.1518973

Abstract

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Evaluation of the ion bombardment energy on silicon dioxide films deposited from $O_{2} /TEOS$ plasmas on Si and unstrained ${Si}_{0.83} {Ge}_{0.17} / Si$ substrates

D. Goghero; A. Goullet; L. Lebrizoual; F. Meyer; G. Turban

J. Vac. Sci. Technol. B 20, 2281–2287 (2002) https://doi.org/10.1116/1.1518967

Abstract

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Investigation of active Si pitting and its impact on 0.15 and $0.30 μ m$ n-type metal–oxide–semiconductor and p-type metal–oxide–semiconductor transistors

C. S. Chua; E. F. Chor; F. Goh; A. See; L. Chan

J. Vac. Sci. Technol. B 20, 2288–2294 (2002) https://doi.org/10.1116/1.1518972

Abstract

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Investigations of pulse current electrodeposition for damascene copper metals

Shih-Chieh Chang; Jia-Min Shieh; Bau-Tong Dai; Ming-Shiann Feng

J. Vac. Sci. Technol. B 20, 2295–2298 (2002) https://doi.org/10.1116/1.1518974

Abstract

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Effects of Ar inductively coupled plasma exposure on 4H-SiC Schottky rectifiers

K. Ip; S. Nigam; K. P. Lee; K. H. Baik; G. Y. Chung; M. F. MacMillan; F. Ren; S. J. Pearton

J. Vac. Sci. Technol. B 20, 2299–2302 (2002) https://doi.org/10.1116/1.1518971

Abstract

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Structure and size distribution of ${TiO}_{2}$ nanoparticles deposited on stainless steel mesh

W. Li; S. Ismat Shah; M. Sung; C.-P. Huang

J. Vac. Sci. Technol. B 20, 2303–2308 (2002) https://doi.org/10.1116/1.1520557

Abstract

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Fabrication of Si field emitter arrays integrated with metal–oxide–semiconductor field-effect transistor driving circuits

M. Nagao; Y. Tamura; T. Matsukawa; S. Kanemaru; J. Itoh; K. Tokunaga

J. Vac. Sci. Technol. B 20, 2309–2313 (2002) https://doi.org/10.1116/1.1520553

Abstract

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Texture and resistivity of dilute binary Cu(Al), Cu(In), Cu(Ti), Cu(Nb), Cu(Ir), and Cu(W) alloy thin films

A. Gungor; K. Barmak; A. D. Rollett; C. Cabral, Jr.; J. M. E. Harper

J. Vac. Sci. Technol. B 20, 2314–2319 (2002) https://doi.org/10.1116/1.1520549

Abstract

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Direct printing of polymer microstructures on flat and spherical surfaces using a letterpress technique

Scott M. Miller; Sandra M. Troian; Sigurd Wagner

J. Vac. Sci. Technol. B 20, 2320–2327 (2002) https://doi.org/10.1116/1.1520554

Abstract

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Characteristics of ultrathin Ta and TaN films

S. M. Rossnagel

J. Vac. Sci. Technol. B 20, 2328–2336 (2002) https://doi.org/10.1116/1.1520556

Abstract

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Direct patterning of nanostructures by field-induced deposition from a scanning tunneling microscope tip

A. Houel; D. Tonneau; N. Bonnail; H. Dallaporta; V. I. Safarov

J. Vac. Sci. Technol. B 20, 2337–2345 (2002) https://doi.org/10.1116/1.1520548

Abstract

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Electrical conductivity of sidewall-deposited fluorocarbon polymer in ${SiO}_{2}$ etching processes

T. Shimmura; S. Soda; S. Samukawa; M. Koyanagi; K. Hane

J. Vac. Sci. Technol. B 20, 2346–2350 (2002) https://doi.org/10.1116/1.1520551

Abstract

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Thickness metrology and end point control in W chemical vapor deposition process from ${SiH}_{4} / {WF}_{6}$ using in situ mass spectrometry

Y. Xu; T. Gougousi; L. Henn-Lecordier; Y. Liu; S. Cho; G. W. Rubloff

J. Vac. Sci. Technol. B 20, 2351–2360 (2002) https://doi.org/10.1116/1.1520555

Abstract

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Effects of Ti addition on the morphology, interfacial reaction, and diffusion of Cu on ${SiO}_{2}$

C. J. Liu; J. S. Jeng; J. S. Chen; Y. K. Lin

J. Vac. Sci. Technol. B 20, 2361–2366 (2002) https://doi.org/10.1116/1.1520552

Abstract

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Assessment of extreme ultraviolet-induced charging of subtractive metal lithography masks

L. E. Klebanoff; W. M. Clift; N. Franco; C. Bostedt; L. J. Terminello

J. Vac. Sci. Technol. B 20, 2367–2374 (2002) https://doi.org/10.1116/1.1520550

Abstract

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Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching

Diego J. Dı́az; Todd L. Williamson; Ilesanmi Adesida; Paul W. Bohn; Richard J. Molnar

J. Vac. Sci. Technol. B 20, 2375–2383 (2002) https://doi.org/10.1116/1.1521428

Abstract

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Photoresponse characteristics of $n- ZnO /p- Si$ heterojunction photodiodes

Y. S. Choi; J. Y. Lee; S. Im; S. J. Lee

J. Vac. Sci. Technol. B 20, 2384–2387 (2002) https://doi.org/10.1116/1.1524152

Abstract

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Scanning tunneling microscopy of endohedral metallofullerene ${Lu–C}_{82}$ on $C_{60}$ film

Bo-Rong Shi; Xue-Sen Wang; Houjin Huang; Shi-He Yang; A. Bachmann; Nelson Cue

J. Vac. Sci. Technol. B 20, 2388–2392 (2002) https://doi.org/10.1116/1.1524151

Abstract

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Radio-frequency discharge cleaning of silicon-capped Mo/Si multilayer extreme ultraviolet optics

Samuel Graham; Charles Steinhaus; Miles Clift; Leonard Klebanoff

J. Vac. Sci. Technol. B 20, 2393–2400 (2002) https://doi.org/10.1116/1.1524153

Abstract

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Two-dimensional transverse cross-section nanopotentiometry of actively driven buried-heterostructure multiple-quantum-well lasers

D. Ban; E. H. Sargent; St. J. Dixon-Warren; I. Calder; T. Grevatt; G. Knight; J. K. White

J. Vac. Sci. Technol. B 20, 2401–2407 (2002) https://doi.org/10.1116/1.1524150

Abstract

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Near-surface deep-trap and bulk deep-trap states in ${In}_{x} {Ga}_{1−x} As / GaAs$

N. C. Halder; Kimberly Genareau

J. Vac. Sci. Technol. B 20, 2408–2412 (2002) https://doi.org/10.1116/1.1525813

Abstract

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Effect of photoacid generator concentration on sensitivity, photoacid generation, and deprotection of chemically amplified resists

Adam R. Pawloski; Paul F. Nealey

J. Vac. Sci. Technol. B 20, 2413–2420 (2002) https://doi.org/10.1116/1.1525811

Abstract

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Comparing ionized physical vapor deposition and high power magnetron copper seed deposition

P. J. Stout; D. Zhang; S. Rauf; P. L. G. Ventzek

J. Vac. Sci. Technol. B 20, 2421–2432 (2002) https://doi.org/10.1116/1.1525812

Abstract

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Molybdenum-based nanostructured mixed oxides for sensing applications: Effect of the Mo oxide composition on the structure of sol–gel thin films

A. Taurino; M. Catalano; P. Siciliano; K. Galatsis; Y. X. Li; W. Wlodarski

J. Vac. Sci. Technol. B 20, 2433–2440 (2002) https://doi.org/10.1116/1.1526360

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Near-surface electronic defects and morphology of ${CuIn}_{1−x} {Ga}_{x} {Se}_{2}$

Y. M. Strzhemechny; P. E. Smith; S. T. Bradley; D. X. Liao; A. A. Rockett; K. Ramanathan; L. J. Brillson

J. Vac. Sci. Technol. B 20, 2441–2448 (2002) https://doi.org/10.1116/1.1526357

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Development of the point diffraction interferometer for extreme ultraviolet lithography: Design, fabrication, and evaluation

K. Otaki; K. Ota; I. Nishiyama; T. Yamamoto; Y. Fukuda; S. Okazaki

J. Vac. Sci. Technol. B 20, 2449–2458 (2002) https://doi.org/10.1116/1.1526605

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Fabrication of flexible polymer tubes for micro and nanofluidic applications

B. Ilic; D. Czaplewski; M. Zalalutdinov; B. Schmidt; H. G. Craighead

J. Vac. Sci. Technol. B 20, 2459–2465 (2002) https://doi.org/10.1116/1.1526356

Abstract

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Photoinduced organic nanowires from self-assembled monolayers

Ying-Hong Qiao; Qing-Dao Zeng; Zhong-Yin Tan; Shan-Dong Xu; Dong Wang; Chen Wang; Li-Jun Wan; Chun-Li Bai

J. Vac. Sci. Technol. B 20, 2466–2469 (2002) https://doi.org/10.1116/1.1526601

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PAPERS FROM THE THIRD LOW ENERGY ELECTRON/MICROSCOPY PHOTOEMISSION ELECTRON MICROSCOPY WORKSHOP

SURFACE DYNAMICS, SURFACE PHASE TRANSITIONS, NUCLEATION, AND GROWTH

Low energy electron microscopy studies of steps on single crystal thin films of refractory metals

M. Ondrejcek; W. Swiech; G. Yang; C. P. Flynn

J. Vac. Sci. Technol. B 20, 2473–2477 (2002) https://doi.org/10.1116/1.1521958

Abstract

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Low energy electron microscopy study of In on Si(111)

A. Pavlovska; E. Bauer; M. Giessen

J. Vac. Sci. Technol. B 20, 2478–2491 (2002) https://doi.org/10.1116/1.1523370

Abstract

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Growth shapes of Ag crystallites on the Si(111) surface

W. X. Tang; K. L. Man; Hanchen Huang; C. H. Woo; M. S. Altman

J. Vac. Sci. Technol. B 20, 2492–2495 (2002) https://doi.org/10.1116/1.1523372

Abstract

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Low energy electron microscopy/diffraction study on growth of Ge on Si(113) surface

T. Yasue; T. Koshikawa; E. Bauer

J. Vac. Sci. Technol. B 20, 2496–2499 (2002) https://doi.org/10.1116/1.1523374

Abstract

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Growth dynamics of titanium silicide nanowires observed with low-energy electron microscopy

P. A. Bennett; B. Ashcroft; Zhian He; R. M. Tromp

J. Vac. Sci. Technol. B 20, 2500–2504 (2002) https://doi.org/10.1116/1.1525006

Abstract

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DIAMOND AND ORGANIC THIN-FILM APPLICATIONS

In situ emission microscopy of field emitter cathode arrays

G. A. Mulhollan; K. D. Jamison; M. E. Kordesch

J. Vac. Sci. Technol. B 20, 2505–2508 (2002) https://doi.org/10.1116/1.1525008

Abstract

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Scanning photoelectron microscopy study of as-grown and heat-treated chemical vapor deposition boron-doped diamond films

A. A. Zakharov; V. Ralchenko; R. Khmelnitskii; I. Lindau

J. Vac. Sci. Technol. B 20, 2509–2513 (2002) https://doi.org/10.1116/1.1525009

Abstract

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DEVICE APPLICATIONS AND INSTRUMENTATION

Photoelectron emission microscopy of ultrathin oxide covered devices

V. W. Ballarotto; M. Breban; K. Siegrist; R. J. Phaneuf; E. D. Williams

J. Vac. Sci. Technol. B 20, 2514–2518 (2002) https://doi.org/10.1116/1.1525007

Abstract

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Comparison of stigmatically focusing magnetic prisms of square versus round symmetries

H.-C. Kan; T. Dürkop; R. J. Phaneuf

J. Vac. Sci. Technol. B 20, 2519–2525 (2002) https://doi.org/10.1116/1.1523375

Abstract

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Correction of chromatic and spherical aberration in electron microscopy utilizing the time structure of pulsed excitation sources

G. Schönhense; H. Spiecker

J. Vac. Sci. Technol. B 20, 2526–2534 (2002) https://doi.org/10.1116/1.1523373

Abstract

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MAGNETIC THIN-FILM APPLICATIONS

Scanning electron microscope with polarization analysis: Micromagnetic structures in ultrathin films

Hans Peter Oepen; Gerold Steierl; Jürgen Kirschner

J. Vac. Sci. Technol. B 20, 2535–2538 (2002) https://doi.org/10.1116/1.1519863

Abstract

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Low-energy electron microscopy/x-ray magnetic circular dichroism photoemission electron microscopy study of epitaxial MnAs on GaAs

E. Bauer; S. Cherifi; L. Daeweritz; M. Kaestner; S. Heun; A. Locatelli

J. Vac. Sci. Technol. B 20, 2539–2542 (2002) https://doi.org/10.1116/1.1525005

Abstract

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Magnetic dichroisms in absorption and photoemission for magnetic characterization in x-ray photoelectron emission microscopy

W. Kuch; L. I. Chelaru; F. Offi; M. Kotsugi; J. Kirschner

J. Vac. Sci. Technol. B 20, 2543–2549 (2002) https://doi.org/10.1116/1.1523371

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PAPERS FROM THE 46TH INTERNATIONAL CONFERENCE ON ELECTRON, ION, AND PHOTON BEAM TECHNOLOGY AND NANOFABRICATION

OPTICAL LITHOGRAPHY

Effect of high numerical aperture lens on lithographic performance in 157 nm lithography

Toshiro Itani; Toshifumi Suganaga; Noriyoshi Kanda; Jae-Hwan Kim; Kunio Watanabe; Julian Cashmore; Malcolm Gower

J. Vac. Sci. Technol. B 20, 2562–2566 (2002) https://doi.org/10.1116/1.1520577

Abstract

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Prospects for photolithography at 121 nm

V. Liberman; M. Rothschild; P. G. Murphy; S. T. Palmacci

J. Vac. Sci. Technol. B 20, 2567–2573 (2002) https://doi.org/10.1116/1.1524974

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121.6 nm radiation source for advanced lithography

Jianxun Yan; Ashraf El-Dakrouri; Mounir Laroussi; Mool C. Gupta

J. Vac. Sci. Technol. B 20, 2574–2577 (2002) https://doi.org/10.1116/1.1515302

Abstract

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Optimizing vacuum ultraviolet attenuated phase shift masking materials

B. W. Smith; A. Y. Bourov; Y. Liu

J. Vac. Sci. Technol. B 20, 2578–2582 (2002) https://doi.org/10.1116/1.1526099

Abstract

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Polarization contact: Concept and initial assessment

Michael Lam; Andy Neureuther

J. Vac. Sci. Technol. B 20, 2583–2588 (2002) https://doi.org/10.1116/1.1526098

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Optical imaging properties of dense phase shift feature patterns

M. Fritze; B. Tyrrell; R. Mallen; B. Wheeler; P. Rhyins; P. Martin

J. Vac. Sci. Technol. B 20, 2589–2596 (2002) https://doi.org/10.1116/1.1520567

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Parallel maskless optical lithography for prototyping, low-volume production, and research

Dario Gil; Rajesh Menon; Xudong Tang; Henry I. Smith; D. J. D. Carter

J. Vac. Sci. Technol. B 20, 2597–2601 (2002) https://doi.org/10.1116/1.1526353

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Interference pattern formation from an array of coherent laser beams

Y. Liu; J. Barhen; Y. Braiman; J. X. Zhong

J. Vac. Sci. Technol. B 20, 2602–2605 (2002) https://doi.org/10.1116/1.1523396

Abstract

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Simulation of critical dimension error using Monte Carlo method and its experimental verification

Sonny Y. Zinn; Sung-Woo Lee; Sung-Woon Choi; Jung-Min Sohn

J. Vac. Sci. Technol. B 20, 2606–2609 (2002) https://doi.org/10.1116/1.1524978

Abstract

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Operational model for pattern and probe based aberration monitors

Garth Robins; Andrew Neureuther

J. Vac. Sci. Technol. B 20, 2610–2616 (2002) https://doi.org/10.1116/1.1526603

Abstract

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Generalized scanning beam interference lithography system for patterning gratings with variable period progressions

G. S. Pati; R. K. Heilmann; P. T. Konkola; C. Joo; C. G. Chen; E. Murphy; M. L. Schattenburg

J. Vac. Sci. Technol. B 20, 2617–2621 (2002) https://doi.org/10.1116/1.1520563

Abstract

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ELECTRON BEAM LITHOGRAPHY

Electron projection lithography tool development status

Takaharu Miura

J. Vac. Sci. Technol. B 20, 2622–2626 (2002) https://doi.org/10.1116/1.1520576

Abstract

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Evolution of electron projection optics from variable axis immersion lenses to projection reduction exposure with variable axis immersion lenses

W. Stickel; H. C. Pfeiffer; S. D. Golladay; M. S. Gordon

J. Vac. Sci. Technol. B 20, 2627–2633 (2002) https://doi.org/10.1116/1.1515303

Abstract

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Direct measurement of chromatic aberrations induced by $SiN x$ continuous membrane mask

Takehisa Yahiro; Shohei Suzuki; Takeshi Irita; Shintaro Kawata; Kazuaki Suzuki

J. Vac. Sci. Technol. B 20, 2634–2639 (2002) https://doi.org/10.1116/1.1523016

Abstract

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Development of a mask-scan electron beam mask writer

Shinsuke Nishimura; Mitsuko Shimizu; Soichiro Mitsui; Kiminobu Akeno; Hideo Kusakabe; Munehiro Ogasawara; Ryuji Hayashi; Shinji Yanaga; Noboru Kobayashi; Toru Tojo

J. Vac. Sci. Technol. B 20, 2640–2645 (2002) https://doi.org/10.1116/1.1521738

Abstract

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Digital electrostatic electron-beam array lithography

L. R. Baylor; D. H. Lowndes; M. L. Simpson; C. E. Thomas; M. A. Guillorn; V. I. Merkulov; J. H. Whealton; E. D. Ellis; D. K. Hensley; A. V. Melechko

J. Vac. Sci. Technol. B 20, 2646–2650 (2002) https://doi.org/10.1116/1.1520559

Abstract

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Maskless lithography using low-energy electron beam: Recent results for proof-of-concept system

T. Nakasugi; A. Ando; R. Inanami; N. Sasaki; T. Ota; O. Nagano; Y. Yamazaki; K. Sugihara; I. Mori; M. Miyoshi; K. Okumura; H. Fujioka

J. Vac. Sci. Technol. B 20, 2651–2656 (2002) https://doi.org/10.1116/1.1520562

Abstract

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Prototype raster multibeam lithography tool

S. T. Coyle; D. Holmgren; X. Chen; T. Thomas; A. Sagle; J. Maldonado; B. Shamoun; P. Allen; M. Gesley

J. Vac. Sci. Technol. B 20, 2657–2661 (2002) https://doi.org/10.1116/1.1520574

Abstract

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Distributed axis electron-beam system for lithography and inspection—preliminary experimental results

D. S. Pickard; C. Campbell; T. Crane; L. J. Cruz-Rivera; A. Davenport; W. D. Meisburger; R. F. W. Pease; T. R. Groves

J. Vac. Sci. Technol. B 20, 2662–2665 (2002) https://doi.org/10.1116/1.1520566

Abstract

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Comprehensive model of electron energy deposition

Geng Han; Mumit Khan; Yanghua Fang; Franco Cerrina

J. Vac. Sci. Technol. B 20, 2666–2671 (2002) https://doi.org/10.1116/1.1526633

Abstract

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Development of data conversion system for electron beam projection lithography

Kokoro Kato; Kuninori Nishizawa; Tamae Haruki; Tadao Inoue; Koichi Kamijo; Shinichi Kojima; Hideyuki Minami; Kazuya Okamoto

J. Vac. Sci. Technol. B 20, 2672–2677 (2002) https://doi.org/10.1116/1.1520571

Abstract

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Testing an electrostatic deflection innovation: Initial experimental results

Michael Retsky; Richard Stein

J. Vac. Sci. Technol. B 20, 2678–2681 (2002) https://doi.org/10.1116/1.1523020

Abstract

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ION BEAM LITHOGRAPHY

Copper device editing: Strategy for focused ion beam milling of copper

J. David Casey, Jr.; Michael Phaneuf; Clive Chandler; Michael Megorden; Kathryn E. Noll; Richard Schuman; Thomas J. Gannon; Alex Krechmer; David Monforte; Nicholas Antoniou; Neil Bassom; Jian Li; Peter Carleson; Chuong Huynh

J. Vac. Sci. Technol. B 20, 2682–2685 (2002) https://doi.org/10.1116/1.1521736

Abstract

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Graphitization of Fe-doped amorphous carbon pillars grown by focused-ion-beam-induced chemical-vapor deposition

J. Fujita; M. Ishida; T. Ichihashi; Y. Ochiai; T. Kaito; S. Matsui

J. Vac. Sci. Technol. B 20, 2686–2689 (2002) https://doi.org/10.1116/1.1518022

Abstract

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Conductance-atomic force microscope characterization of focused ion beam chip repair processes

H. Marchman; J. McMurray; H. Wildman

J. Vac. Sci. Technol. B 20, 2690–2694 (2002) https://doi.org/10.1116/1.1524982

Abstract

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End point of silicon milling using an optical beam induced current signal for controlled access to integrated circuits for backside circuit editing

N. Antoniou; N. J. Bassom; C. Huynh; D. Monforte; J. D. Casey; A. Krechmer; P. Carleson

J. Vac. Sci. Technol. B 20, 2695–2699 (2002) https://doi.org/10.1116/1.1526665

Abstract

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Improvements in focused ion beam micromachining of interconnect materials

J. C. Gonzalez; M. I. N. da Silva; D. P. Griffis; P. E. Russell

J. Vac. Sci. Technol. B 20, 2700–2704 (2002) https://doi.org/10.1116/1.1515310

Abstract

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Scattering mask concept for ion-beam nanolithography

P. Ruchhoeft; J. C. Wolfe; J. L. Torres; R. Bass

J. Vac. Sci. Technol. B 20, 2705–2708 (2002) https://doi.org/10.1116/1.1520568

Abstract

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Correcting for global space charge by positive ion generation

Trevor Crane; Colin Campbell; Dan Pickard; Liqun Han; Kimitoshi Takahashi; W. Dan Meisburger; R. Fabian Pease

J. Vac. Sci. Technol. B 20, 2709–2712 (2002) https://doi.org/10.1116/1.1523398

Abstract

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Ion projection sensitized selective Cu electroplating on uncoated $p$ -Si

A. Spiegel; W. H. Bruenger; C. Dzionk; P. Schmuki

J. Vac. Sci. Technol. B 20, 2713–2716 (2002) https://doi.org/10.1116/1.1524977

Abstract

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ELECTRON AND ION SOURCE TECHNOLOGY

Improvement in brightness of multicusp-plasma ion source

Q. Ji; X. Jiang; T.-J. King; K.-N. Leung; K. Standiford; S. B. Wilde

J. Vac. Sci. Technol. B 20, 2717–2720 (2002) https://doi.org/10.1116/1.1526694

Abstract

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Role of oxygen in semiconductor negative electron affinity photocathodes

Francisco Machuca; Zhi Liu; Yun Sun; P. Pianetta; W. E. Spicer; R. F. W. Pease

J. Vac. Sci. Technol. B 20, 2721–2725 (2002) https://doi.org/10.1116/1.1521742

Abstract

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Development of electromagnetic lenses for multielectron beam lithography system

T. Haraguchi; T. Sakazaki; S. Hamaguchi; H. Yasuda

J. Vac. Sci. Technol. B 20, 2726–2729 (2002) https://doi.org/10.1116/1.1524981

Abstract

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NANO- AND MICROFABRICATION

Nanopipe fabrication using vertically aligned carbon nanofiber templates

A. V. Melechko; T. E. McKnight; M. A. Guillorn; D. W. Austin; B. Ilic; V. I. Merkulov; M. J. Doktycz; D. H. Lowndes; M. L. Simpson

J. Vac. Sci. Technol. B 20, 2730–2733 (2002) https://doi.org/10.1116/1.1515306

Abstract

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Electrode modification by electron-induced patterning of self-assembled monolayers

G. Kaltenpoth; B. Völkel; C. T. Nottbohm; A. Gölzhäuser; M. Buck

J. Vac. Sci. Technol. B 20, 2734–2738 (2002) https://doi.org/10.1116/1.1523026

Abstract

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Exploiting intermolecular interactions and self-assembly for ultrahigh resolution nanolithography

M. E. Anderson; R. K. Smith; Z. J. Donhauser; A. Hatzor; P. A. Lewis; L. P. Tan; H. Tanaka; M. W. Horn; P. S. Weiss

J. Vac. Sci. Technol. B 20, 2739–2744 (2002) https://doi.org/10.1116/1.1515301

Abstract

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Localized and directed lateral growth of carbon nanotubes from a porous template

S. J. Wind; R. Martel; Ph. Avouris

J. Vac. Sci. Technol. B 20, 2745–2748 (2002) https://doi.org/10.1116/1.1523019

Abstract

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Tunable distributed-feedback laser gratings for telecom applications, manufactured by electron-beam lithography

S. A. Rishton; B. Pezeshki; S. Zou; G. Yoffe; W. Henschel

J. Vac. Sci. Technol. B 20, 2749–2752 (2002) https://doi.org/10.1116/1.1524979

Abstract

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Optical waveguides with apodized sidewall gratings via spatial-phase-locked electron-beam lithography

J. T. Hastings; Michael H. Lim; J. G. Goodberlet; Henry I. Smith

J. Vac. Sci. Technol. B 20, 2753–2757 (2002) https://doi.org/10.1116/1.1521744

Abstract

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Surface diffusion and size evolution of nanostructures in laser-focused atomic deposition

Jianxin Zhong; Jack C. Wells; Yehuda Braiman

J. Vac. Sci. Technol. B 20, 2758–2762 (2002) https://doi.org/10.1116/1.1520558

Abstract

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Method for manufacturing nanoscale structures in transition metal layers

Falco C. M. J. M. van Delft; W. S. M. M. Ketelaars; M. Kroon; J. Lambregts

J. Vac. Sci. Technol. B 20, 2763–2767 (2002) https://doi.org/10.1116/1.1526635

Abstract

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Nanostructure fabrication by direct electron-beam writing of nanoparticles

Saul Griffith; Mark Mondol; David S. Kong; Joseph M. Jacobson

J. Vac. Sci. Technol. B 20, 2768–2772 (2002) https://doi.org/10.1116/1.1526697

Abstract

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Characteristics of multiwalled carbon nanotube nanobridges fabricated by poly(methylmethacrylate) suspended dispersion

S.-B. Lee; K. B. K. Teo; L. A. W. Robinson; A. S. Teh; M. Chhowalla; D. G. Hasko; G. A. J. Amaratunga; W. I. Milne; H. Ahmed

J. Vac. Sci. Technol. B 20, 2773–2776 (2002) https://doi.org/10.1116/1.1520569

Abstract

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Nanoscale electron beam lithography and etching for fully depleted silicon-on-insulator devices

L. Dreeskornfeld; J. Hartwich; J. Kretz; L. Risch; W. Roesner; D. Schmitt-Landsiedel

J. Vac. Sci. Technol. B 20, 2777–2779 (2002) https://doi.org/10.1116/1.1518023

Abstract

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Multilevel silicon diffractive optics for terahertz waves

E. D. Walsby; S. Wang; J. Xu; T. Yuan; R. Blaikie; S. M. Durbin; X.-C. Zhang; D. R. S. Cumming

J. Vac. Sci. Technol. B 20, 2780–2783 (2002) https://doi.org/10.1116/1.1518021

Abstract

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Density estimation for amorphous carbon nanopillars grown by focused ion beam assisted chemical vapor deposition

Masahiko Ishida; Jun-ichi Fujita; Yukinori Ochiai

J. Vac. Sci. Technol. B 20, 2784–2787 (2002) https://doi.org/10.1116/1.1526699

Abstract

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Process integration of self-assembled polymer templates into silicon nanofabrication

K. W. Guarini; C. T. Black; Y. Zhang; H. Kim; E. M. Sikorski; I. V. Babich

J. Vac. Sci. Technol. B 20, 2788–2792 (2002) https://doi.org/10.1116/1.1521730

Abstract

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Design and prototyping of a micropropulsion system for microsatellites attitude control and orbit correction

L. Vaccari; M. Altissimo; E. Di Fabrizio; F. De Grandis; G. Manzoni; F. Santoni; F. Graziani; A. Gerardino; F. Perennes; P. Miotti

J. Vac. Sci. Technol. B 20, 2793–2797 (2002) https://doi.org/10.1116/1.1523015

Abstract

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NANODEVICES

Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors

S. J. Wind; J. Appenzeller; R. Martel; V. Derycke; P. Avouris

J. Vac. Sci. Technol. B 20, 2798–2801 (2002) https://doi.org/10.1116/1.1521731

Abstract

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Hybrid assembly technique using alternating current field for molecular electronic measurements

Islamshah Amlani; Adam M. Rawlett; Larry A. Nagahara; Raymond K. Tsui

J. Vac. Sci. Technol. B 20, 2802–2805 (2002) https://doi.org/10.1116/1.1523025

Abstract

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Single-electron parametron memory cell

E. G. Emiroglu; Z. A. K. Durrani; D. G. Hasko; D. A. Williams

J. Vac. Sci. Technol. B 20, 2806–2809 (2002) https://doi.org/10.1116/1.1524975

Abstract

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Quantum dot with independently tunable tunneling barriers fabricated using an atomic force microscope

R. Nemutudi; C. G. Smith; C. J. B. Ford; N. J. Appleyard; M. Pepper; D. A. Ritchie; G. A. C. Jones

J. Vac. Sci. Technol. B 20, 2810–2813 (2002) https://doi.org/10.1116/1.1524973

Abstract

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Fabrication of spin-current-induced domain-wall-nucleation device in planar configuration

Takashi Kimura; Fujio Wakaya; Kenji Gamo

J. Vac. Sci. Technol. B 20, 2814–2818 (2002) https://doi.org/10.1116/1.1518014

Abstract

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Single ion implantation for solid state quantum computer development

T. Schenkel; A. Persaud; S. J. Park; J. Meijer; J. R. Kingsley; J. W. McDonald; J. P. Holder; J. Bokor; D. H. Schneider

J. Vac. Sci. Technol. B 20, 2819–2823 (2002) https://doi.org/10.1116/1.1518016

Abstract

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Single-electron transistor structures based on silicon-on-insulator silicon nanowire fabrication by scanning probe lithography and wet etching

J. T. Sheu; K. S. You; C. H. Wu; K. M. Chang

J. Vac. Sci. Technol. B 20, 2824–2828 (2002) https://doi.org/10.1116/1.1523017

Abstract

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EUV LITHOGRAPHY

Sub-70 nm extreme ultraviolet lithography at the Advanced Light Source static microfield exposure station using the engineering test stand set-2 optic

J. Vac. Sci. Technol. B 20, 2829–2833 (2002) https://doi.org/10.1116/1.1524976

Abstract

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Testing extreme ultraviolet optics with visible-light and extreme ultraviolet interferometry

Kenneth A. Goldberg; Patrick Naulleau; Jeffrey Bokor; Henry N. Chapman; Anton Barty

J. Vac. Sci. Technol. B 20, 2834–2839 (2002) https://doi.org/10.1116/1.1523401

Abstract

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Particle-induced distortion in extreme ultraviolet lithography reticles during exposure chucking

R. Tejeda; R. Engelstad; E. Lovell; K. Blaedel

J. Vac. Sci. Technol. B 20, 2840–2843 (2002) https://doi.org/10.1116/1.1518017

Abstract

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Multiple-beam interference lithography with electron beam written gratings

H. H. Solak; C. David; J. Gobrecht; L. Wang; F. Cerrina

J. Vac. Sci. Technol. B 20, 2844–2848 (2002) https://doi.org/10.1116/1.1518015

Abstract

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Lithographic aerial-image contrast measurement in the extreme ultraviolet engineering test stand

Sang H. Lee; Daniel A. Tichenor; Patrick Naulleau

J. Vac. Sci. Technol. B 20, 2849–2852 (2002) https://doi.org/10.1116/1.1526354

Abstract

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NANOIMPRINT LITHOGRAPHY

High-resolution transfer printing on GaAs surfaces using alkane dithiol monolayers

Yueh-Lin Loo; Julia W. P. Hsu; Robert L. Willett; Kirk W. Baldwin; Ken W. West; John A. Rogers

J. Vac. Sci. Technol. B 20, 2853–2856 (2002) https://doi.org/10.1116/1.1523405

Abstract

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Characterization of and imprint results using indium tin oxide-based step and flash imprint lithography templates

W. J. Dauksher; K. J. Nordquist; D. P. Mancini; D. J. Resnick; J. H. Baker; A. E. Hooper; A. A. Talin; T. C. Bailey; A. M. Lemonds; S. V. Sreenivasan; J. G. Ekerdt; C. G. Willson

J. Vac. Sci. Technol. B 20, 2857–2861 (2002) https://doi.org/10.1116/1.1520575

Abstract

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Polymer microring resonators fabricated by nanoimprint technique

Chung-yen Chao; L. Jay Guo

J. Vac. Sci. Technol. B 20, 2862–2866 (2002) https://doi.org/10.1116/1.1521729

Abstract

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Imprint lithography for curved cross-sectional structure using replicated Ni mold

Yoshihiko Hirai; Satoshi Harada; Hisao Kikuta; Yoshio Tanaka; Masato Okano; Satoshi Isaka; Michio Kobayasi

J. Vac. Sci. Technol. B 20, 2867–2871 (2002) https://doi.org/10.1116/1.1515305

Abstract

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Reversal imprinting by transferring polymer from mold to substrate

X. D. Huang; L.-R. Bao; X. Cheng; L. J. Guo; S. W. Pang; A. F. Yee

J. Vac. Sci. Technol. B 20, 2872–2876 (2002) https://doi.org/10.1116/1.1523404

Abstract

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High-resolution organic polymer light-emitting pixels fabricated by imprinting technique

Xing Cheng; Yongtaek Hong; Jerzy Kanicki; L. Jay Guo

J. Vac. Sci. Technol. B 20, 2877–2880 (2002) https://doi.org/10.1116/1.1515307

Abstract

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Nanoimprinting over topography and multilayer three-dimensional printing

L.-R. Bao; X. Cheng; X. D. Huang; L. J. Guo; S. W. Pang; A. F. Yee

J. Vac. Sci. Technol. B 20, 2881–2886 (2002) https://doi.org/10.1116/1.1526355

Abstract

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Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography

Y. Chen; D. Macintyre; E. Boyd; D. Moran; I. Thayne; S. Thoms

J. Vac. Sci. Technol. B 20, 2887–2890 (2002) https://doi.org/10.1116/1.1520564

Abstract

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Prediction of fabrication distortions in step and flash imprint lithography templates

C. J. Martin; R. L. Engelstad; E. G. Lovell; D. J. Resnick; E. J. Weisbrod

J. Vac. Sci. Technol. B 20, 2891–2895 (2002) https://doi.org/10.1116/1.1521743

Abstract

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Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates

D. P. Mancini; K. A. Gehoski; E. Ainley; K. J. Nordquist; D. J. Resnick; T. C. Bailey; S. V. Sreenivasan; J. G. Ekerdt; C. G. Willson

J. Vac. Sci. Technol. B 20, 2896–2901 (2002) https://doi.org/10.1116/1.1515311

Abstract

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RESISTS

Evaluation of siloxane and polyhedral silsesquioxane copolymers for 157 nm lithography

V. Bellas; E. Tegou; I. Raptis; E. Gogolides; P. Argitis; H. Iatrou; N. Hadjichristidis; E. Sarantopoulou; A. C. Cefalas

J. Vac. Sci. Technol. B 20, 2902–2908 (2002) https://doi.org/10.1116/1.1526358

Abstract

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Fluoropolymer-based resists for a single-resist process of 157 nm lithography

M. Toriumi; T. Yamazaki; T. Furukawa; S. Irie; S. Ishikawa; T. Itani

J. Vac. Sci. Technol. B 20, 2909–2912 (2002) https://doi.org/10.1116/1.1526359

Abstract

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Electrostatic effects during dissolution of positive tone photoresists

Gerard M. Schmid; Sean D. Burns; Pavlos C. Tsiartas; C. Grant Willson

J. Vac. Sci. Technol. B 20, 2913–2919 (2002) https://doi.org/10.1116/1.1521735

Abstract

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Probing surface and bulk chemistry in resist films using near edge x-ray absorption fine structure

Joseph L. Lenhart; Ronald L. Jones; Eric K. Lin; Christopher L. Soles; Wen-li Wu; Daniel A. Fischer; Sharadha Sambasivan; Dario L. Goldfarb; Marie Angelopoulos

J. Vac. Sci. Technol. B 20, 2920–2926 (2002) https://doi.org/10.1116/1.1524970

Abstract

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Depth dependence of resist line-edge roughness: Relation to photoacid diffusion length

J. Shin; Y. Ma; F. Cerrina

J. Vac. Sci. Technol. B 20, 2927–2931 (2002) https://doi.org/10.1116/1.1526638

Abstract

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Delay-time and aging effects on contrast and sensitivity of hydrogen silsesquioxane

Falco C. M. J. M. van Delft

J. Vac. Sci. Technol. B 20, 2932–2936 (2002) https://doi.org/10.1116/1.1524980

Abstract

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Low stress development of poly(methylmethacrylate) for high aspect ratio structures

M. J. Rooks; E. Kratschmer; R. Viswanathan; J. Katine; R. E. Fontana, Jr.; S. A. MacDonald

J. Vac. Sci. Technol. B 20, 2937–2941 (2002) https://doi.org/10.1116/1.1524971

Abstract

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Photopatternable sol-gel for compound semiconductor processing

Mahmoud Fallahi; Robert Bedford; Dong Lu

J. Vac. Sci. Technol. B 20, 2942–2945 (2002) https://doi.org/10.1116/1.1521740

Abstract

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Acid catalyst mobility in resist resins

Michael D. Stewart; Hoang Vi Tran; Gerard M. Schmid; Timothy B. Stachowiak; Darren J. Becker; C. Grant Willson

J. Vac. Sci. Technol. B 20, 2946–2952 (2002) https://doi.org/10.1116/1.1523027

Abstract

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Suppression of secondary electron blur by using Br-containing resists in x-ray lithography

K. Kise; K. Marumoto; H. Watanabe; K. Itoga; T. Kumada; H. Sumitani; T. Kitayama; M. Amemiya; Y. Watanabe; K. Uda

J. Vac. Sci. Technol. B 20, 2953–2957 (2002) https://doi.org/10.1116/1.1520565

Abstract

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Evaluation of calixarene—derivatives as high-resolution negative tone electron-beam resists

H. Sailer; A. Ruderisch; D. P. Kern; V. Schurig

J. Vac. Sci. Technol. B 20, 2958–2961 (2002) https://doi.org/10.1116/1.1521737

Abstract

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Photospeed considerations for extreme ultraviolet lithography resists

Paul M. Dentinger; Luke L. Hunter; Donna J. O’Connell; Scott Gunn; Daniel Goods; Theodore H. Fedynyshyn; Russell B. Goodman; David K. Astolfi

J. Vac. Sci. Technol. B 20, 2962–2967 (2002) https://doi.org/10.1116/1.1520561

Abstract

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Partially hydrogenated poly(vinyl phenol) based photoresist for near UV, high aspect ratio micromachining

M. Chatzichristidi; I. Raptis; P. Argitis; J. Everett

J. Vac. Sci. Technol. B 20, 2968–2972 (2002) https://doi.org/10.1116/1.1521741

Abstract

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Thermal-flow techniques for sub-35 nm contact-hole fabrication in electron-beam lithography

H. L. Chen; C. H. Chen; F. H. Ko; T. C. Chu; C. T. Pan; H. C. Lin

J. Vac. Sci. Technol. B 20, 2973–2978 (2002) https://doi.org/10.1116/1.1526352

Abstract

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X-RAY LITHOGRAPHY

Extendibility of proximity x-ray lithography to 25 nm and below

Eijiro Toyota; Masakazu Washio

J. Vac. Sci. Technol. B 20, 2979–2983 (2002) https://doi.org/10.1116/1.1524972

Abstract

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Collimated point-source x-ray nanolithography

R. A. Forber; Z. W. Chen; R. Menon; R. Grygier; S. Mrowka; I. C. E. Turcu; C. J. Gaeta; K. Cassidy; Henry I. Smith

J. Vac. Sci. Technol. B 20, 2984–2990 (2002) https://doi.org/10.1116/1.1521733

Abstract

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Achieving nanometer-scale, controllable pattern shifts in x-ray lithography using an assembly-tilting technique

Minghao Qi; Henry I. Smith

J. Vac. Sci. Technol. B 20, 2991–2994 (2002) https://doi.org/10.1116/1.1523021

Abstract

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MASKS

Dynamic studies of hard pellicle response during exposure scanning

Eric P. Cotte; Amr Y. Abdo; Roxann L. Engelstad; Edward G. Lovell

J. Vac. Sci. Technol. B 20, 2995–2999 (2002) https://doi.org/10.1116/1.1520573

Abstract

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Characterization of extreme ultraviolet lithography mask defects by actinic inspection with broadband extreme ultraviolet illumination

Mincheol Park; Moonsuk Yi; Paul Mirkarimi; Cindy Larson; Jeffrey Bokor

J. Vac. Sci. Technol. B 20, 3000–3005 (2002) https://doi.org/10.1116/1.1523397

Abstract

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Ultraviolet and direct ultraviolet inspection of next generation lithography reticles

Don Pettibone; Aditya Dayal; Andrei Veldman; Stan Stokowski

J. Vac. Sci. Technol. B 20, 3006–3009 (2002) https://doi.org/10.1116/1.1523400

Abstract

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Fabrication of complete 8 in. stencil mask for electron projection lithography

Isao Amemiya; Hiroshi Yamashita; Sakae Nakatsuka; Ikuru Kimura; Mitsuharu Tsukahara; Satoshi Yasumatsu; Osamu Nagarekawa

J. Vac. Sci. Technol. B 20, 3010–3014 (2002) https://doi.org/10.1116/1.1523024

Abstract

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Complementary mask pattern split for 8 in. stencil masks in electron projection lithography

Hiroshi Yamashita; Kimitoshi Takahashi; Isao Amemiya; Kunio Takeuchi; Hideki Masaoka; Hiroshi Takenaka; Masaki Yamabe

J. Vac. Sci. Technol. B 20, 3015–3020 (2002) https://doi.org/10.1116/1.1518019

Abstract

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Sub-50 nm stencil mask for low-energy electron-beam projection lithography

Masaki Yoshizawa

J. Vac. Sci. Technol. B 20, 3021–3024 (2002) https://doi.org/10.1116/1.1521739

Abstract

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Stencil reticle inspection using a deep ultraviolet microscope

Masashi Okada; Norihiro Katakura; Shintaro Kawata

J. Vac. Sci. Technol. B 20, 3025–3028 (2002) https://doi.org/10.1116/1.1521734

Abstract

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Proximity and heating effects during electron-beam patterning of ultraviolet lithography masks

B. Lu; J. R. Wasson; E. J. Weisbrod; Z. Masnyj; P. J. S. Mangat; K. Nordquist; D. Resnick

J. Vac. Sci. Technol. B 20, 3029–3034 (2002) https://doi.org/10.1116/1.1521745

Abstract

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Efficient phase defect modeling using domain decomposition methods

Konstantinos Adam; Andrew R. Neureuther

J. Vac. Sci. Technol. B 20, 3035–3039 (2002) https://doi.org/10.1116/1.1520560

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Fabrication of x-ray masks using evaporated electron sensitive layers for back patterning of membranes

Yousef Awad; Eric Lavallee; Jacques Beauvais; Dominique Drouin; Pan Yang; David Turcotte; Lau Kien Mun

J. Vac. Sci. Technol. B 20, 3040–3043 (2002) https://doi.org/10.1116/1.1523399

Abstract

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Submicron thermocouple measurements of electron-beam resist heating

Dachen Chu; D. Taner Bilir; R. Fabian W. Pease; Kenneth E. Goodson

J. Vac. Sci. Technol. B 20, 3044–3046 (2002) https://doi.org/10.1116/1.1523023

Abstract

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Thermal modeling of extreme ultraviolet and step and flash imprint lithography substrates during dry etch

E. J. Weisbrod; W. J. Dauksher; D. Zhang; S. Rauf; P. J. S. Mangat; P. L. G. Ventzek; K. H. Smith; S. B. Clemens; C. J. Martin; R. L. Engelstad

J. Vac. Sci. Technol. B 20, 3047–3052 (2002) https://doi.org/10.1116/1.1523028

Abstract

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Electron projection lithography mask format layer stress measurement and simulation of pattern transfer distortion

P. L. Reu; C.-F. Chen; R. L. Engelstad; E. G. Lovell; T. Bayer; J. Greschner; S. Kalt; H. Weiss; O. R. Wood, II; R. S. Mackay

J. Vac. Sci. Technol. B 20, 3053–3057 (2002) https://doi.org/10.1116/1.1521732

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Advanced die-to-database inspection technique for embedded attenuated phase shift mask

Kyoji Yamashita; Ikunao Isomura; Hideo Tsuchiya; Toshiyuki Watanabe; Hiromu Inoue; Satoshi Endo; Masakazu Tokita

J. Vac. Sci. Technol. B 20, 3058–3062 (2002) https://doi.org/10.1116/1.1520570

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METROLOGY

Two-dimensional dopant profiling of ultrashallow junctions by electron holography

Alexander E. Thesen; Bernhard G. Frost; David C. Joy

J. Vac. Sci. Technol. B 20, 3063–3066 (2002) https://doi.org/10.1116/1.1523022

Abstract

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Liquid immersion lens technology applied to laser voltage probing of 130 nm process technology devices

Nagamani Nataraj; Herve Deslandes; William Lo; Travis Eiles; Patrick Pardy

J. Vac. Sci. Technol. B 20, 3067–3070 (2002) https://doi.org/10.1116/1.1523406

Abstract

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Beam alignment for scanning beam interference lithography

Carl G. Chen; Ralf K. Heilmann; Chulmin Joo; Paul T. Konkola; G. S. Pati; Mark L. Schattenburg

J. Vac. Sci. Technol. B 20, 3071–3074 (2002) https://doi.org/10.1116/1.1523402

Abstract

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Precision fringe metrology using a Fresnel zone plate

Chulmin Joo; G. S. Pati; Carl G. Chen; Paul T. Konkola; Ralf K. Heilmann; Mark L. Schattenburg; Alexander Liddle; Erik H. Anderson

J. Vac. Sci. Technol. B 20, 3075–3079 (2002) https://doi.org/10.1116/1.1523018

Abstract

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Accurate reflectometry for extreme-ultraviolet lithography at the National Institute of Standards and Technology

S. Grantham; C. Tarrio; T. B. Lucatorto

J. Vac. Sci. Technol. B 20, 3080–3084 (2002) https://doi.org/10.1116/1.1526351

Abstract

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Technique for preparation of precise wafer cross sections and applications to electron beam lithography of poly(methylmethacrylate) resist

Wenchuang Hu; Tatyana Orlova; Gary H. Bernstein

J. Vac. Sci. Technol. B 20, 3085–3088 (2002) https://doi.org/10.1116/1.1518020

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Electromigration in passivated Cu interconnects studied by transmission x-ray microscopy

G. Schneider; M. A. Meyer; G. Denbeaux; E. Anderson; B. Bates; A. Pearson; C. Knöchel; D. Hambach; E. A. Stach; E. Zschech

J. Vac. Sci. Technol. B 20, 3089–3094 (2002) https://doi.org/10.1116/1.1523403

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High precision stress measurement of ion projection lithography mask membranes

José L. Torres; J. C. Wolfe; Paul Ruchhoeft; Timothy F. Kennedy; Joseph Podolski; Karl Kragler; Albrecht Ehrmann; R. Kaesmaier; H. Löschner

J. Vac. Sci. Technol. B 20, 3095–3098 (2002) https://doi.org/10.1116/1.1515304

Abstract

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Adaptive alignment of photomasks for overlay improvement

C.-f. Chen; R. L. Engelstad; E. G. Lovell; D. L. White; O. R. Wood, II; M. K. Smith; L. R. Harriott

J. Vac. Sci. Technol. B 20, 3099–3105 (2002) https://doi.org/10.1116/1.1515312

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DEPOSITION AND ETCHING

Advanced time-multiplexed plasma etching of high aspect ratio silicon structures

M. A. Blauw; G. Craciun; W. G. Sloof; P. J. French; E. van der Drift

J. Vac. Sci. Technol. B 20, 3106–3110 (2002) https://doi.org/10.1116/1.1518018

Abstract

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Profile simulation of gas chopping based etching processes

B. E. Volland; Tzv. Ivanov; I. W. Rangelow

J. Vac. Sci. Technol. B 20, 3111–3117 (2002) https://doi.org/10.1116/1.1520572

Abstract

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