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September 2002

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

REVIEW ARTICLE

Modification of thiol-derived self-assembling monolayers by electron and x-ray irradiation: Scientific and lithographic aspects

M. Zharnikov; M. Grunze

J. Vac. Sci. Technol. B 20, 1793–1807 (2002) https://doi.org/10.1116/1.1514665

Abstract

View articletitled, Modification of thiol-derived self-assembling monolayers by electron and x-ray irradiation: Scientific and lithographic aspects

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ARTICLES

Modeling the Al/Si rich oxide (SRO)/Si structure

M. Aceves; R. Glaenzer; J. Carrillo; A. Malik; A. Luna

J. Vac. Sci. Technol. B 20, 1808–1814 (2002) https://doi.org/10.1116/1.1498277

Abstract

View articletitled, Modeling the Al/Si rich oxide (SRO)/Si structure

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Experimental simulation of integrated optoelectronic sensors based on III nitrides

D. Starikov; C. Boney; N. Medelci; J.-W. Um; A. Bensaoula; M. Larios Sanz; G. E. Fox

J. Vac. Sci. Technol. B 20, 1815–1820 (2002) https://doi.org/10.1116/1.1498276

Abstract

View articletitled, Experimental simulation of integrated optoelectronic sensors based on III nitrides

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Neutron irradiation effect on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes

Ching-Wu Wang

J. Vac. Sci. Technol. B 20, 1821–1826 (2002) https://doi.org/10.1116/1.1498275

Abstract

View articletitled, Neutron irradiation effect on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes

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Correlation between the microstructures and the cycling performance of ${RuO}_{2}$ electrodes for thin-film microsupercapacitors

Han-Ki Kim; Tae-Yeon Seong; Jae Hong Lim; Young-Woo Ok; Won il Cho; Young Hwa Shin; Young Soo Yoon

J. Vac. Sci. Technol. B 20, 1827–1832 (2002) https://doi.org/10.1116/1.1500752

Abstract

View articletitled, Correlation between the microstructures and the cycling performance of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">RuO</mi><mrow><mn>2</mn></mrow></msub></math> electrodes for thin-film microsupercapacitors

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Development of the ultra-high-sensitive Kr adsorption technique to evaluate the pore-size distribution of thin-film materials

Hiroshi Yanazawa; Hironori Mastunaga; Hitoshi Itoh; Kazuyuki Nakai; Isao Suzuki

J. Vac. Sci. Technol. B 20, 1833–1835 (2002) https://doi.org/10.1116/1.1500751

Abstract

View articletitled, Development of the ultra-high-sensitive Kr adsorption technique to evaluate the pore-size distribution of thin-film materials

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Measurement of the physical and electrical thickness of ultrathin gate oxides

H. S. Chang; H. D. Yang; H. Hwang; H. M. Cho; H. J. Lee; D. W. Moon

J. Vac. Sci. Technol. B 20, 1836–1842 (2002) https://doi.org/10.1116/1.1500750

Abstract

View articletitled, Measurement of the physical and electrical thickness of ultrathin gate oxides

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Study on a condition for forming the high density of silicon needles with high aspect ratio

Masakazu Kanechika; Noriaki Sugimoto; Yasuichi Mitsushima

J. Vac. Sci. Technol. B 20, 1843–1846 (2002) https://doi.org/10.1116/1.1500749

Abstract

View articletitled, Study on a condition for forming the high density of silicon needles with high aspect ratio

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Effects of in situ pyrolytic-gas passivation on reliability of ultrathin silicon oxide gate films

Hiroshi Yamada

J. Vac. Sci. Technol. B 20, 1847–1852 (2002) https://doi.org/10.1116/1.1500748

Abstract

View articletitled, Effects of in situ pyrolytic-gas passivation on reliability of ultrathin silicon oxide gate films

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Molecular dynamics simulation of copper reflow in the damascene process

Ming-Horng Su; Chi-Chuan Hwang; Jee-Gong Chang; Shin-Pon Ju

J. Vac. Sci. Technol. B 20, 1853–1865 (2002) https://doi.org/10.1116/1.1501571

Abstract

View articletitled, Molecular dynamics simulation of copper reflow in the damascene process

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Application of phase-imaging tapping-mode atomic-force microscopy to investigate the grain growth and surface morphology of ${TiSi}_{2}$

C. H. Pang; P. Hing; A. See

J. Vac. Sci. Technol. B 20, 1866–1869 (2002) https://doi.org/10.1116/1.1501580

Abstract

View articletitled, Application of phase-imaging tapping-mode atomic-force microscopy to investigate the grain growth and surface morphology of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiSi</mi><mrow><mn>2</mn></mrow></msub></math>

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Etching parylene-N using a remote oxygen microwave plasma

Russell Callahan; Gregory Raupp; Stephen Beaudoin

J. Vac. Sci. Technol. B 20, 1870–1877 (2002) https://doi.org/10.1116/1.1501584

Abstract

View articletitled, Etching parylene-N using a remote oxygen microwave plasma

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Investigation of in situ trench etching process and Bosch process for fabricating high-aspect-ratio beams for microelectromechanical systems

Kitt Wai Kok; Won Jong Yoo; K. Sooriakumar; J. Sheng Pan; E. Y. Lee

J. Vac. Sci. Technol. B 20, 1878–1883 (2002) https://doi.org/10.1116/1.1501583

Abstract

View articletitled, Investigation of in situ trench etching process and Bosch process for fabricating high-aspect-ratio beams for microelectromechanical systems

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Plasma surface modification for ion penetration barrier in organosiloxane polymer

A. Mallikarjunan; G.-R. Yang; S. P. Murarka; T.-M. Lu

J. Vac. Sci. Technol. B 20, 1884–1890 (2002) https://doi.org/10.1116/1.1508803

Abstract

View articletitled, Plasma surface modification for ion penetration barrier in organosiloxane polymer

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SiGe-on-insulator substrate fabricated by melt solidification for a strained-silicon complementary metal–oxide–semiconductor

Nobuyuki Sugii; Shinya Yamaguchi; Katsuyoshi Washio

J. Vac. Sci. Technol. B 20, 1891–1896 (2002) https://doi.org/10.1116/1.1501576

Abstract

View articletitled, SiGe-on-insulator substrate fabricated by melt solidification for a strained-silicon complementary metal–oxide–semiconductor

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Ag growth on ${Mo(112)–O}_{a}$ and ${MoO}_{2}$ surfaces

A. K. Santra; B. K. Min; D. W. Goodman

J. Vac. Sci. Technol. B 20, 1897–1900 (2002) https://doi.org/10.1116/1.1501581

Abstract

View articletitled, Ag growth on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Mo(112)–O</mi><mrow><mi>a</mi></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MoO</mi><mrow><mn>2</mn></mrow></msub></math> surfaces

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Argon and oxygen ion chemistry effects in photoresist etching

Frank Greer; L. Van; D. Fraser; J. W. Coburn; David B. Graves

J. Vac. Sci. Technol. B 20, 1901–1906 (2002) https://doi.org/10.1116/1.1501578

Abstract

View articletitled, Argon and oxygen ion chemistry effects in photoresist etching

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Molybdenum/aluminum stacked metal taper etching for high-resolution thin-film transistor liquid-crystal display

Takatoshi Tsujimura; Atsuya Makita

J. Vac. Sci. Technol. B 20, 1907–1913 (2002) https://doi.org/10.1116/1.1502704

Abstract

View articletitled, Molybdenum/aluminum stacked metal taper etching for high-resolution thin-film transistor liquid-crystal display

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Quantitative evaluation of local charge trapping in dielectric stacked gate structures using Kelvin probe force microscopy

G. Lubarsky; R. Shikler; N. Ashkenasy; Y. Rosenwaks

J. Vac. Sci. Technol. B 20, 1914–1917 (2002) https://doi.org/10.1116/1.1502701

Abstract

View articletitled, Quantitative evaluation of local charge trapping in dielectric stacked gate structures using Kelvin probe force microscopy

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Interfacial reactions and Schottky barrier properties of composite patterned metal/GaN interfaces

A. Barinov; L. Gregoratti; L. Casalis; M. Kiskinova

J. Vac. Sci. Technol. B 20, 1918–1922 (2002) https://doi.org/10.1116/1.1502705

Abstract

View articletitled, Interfacial reactions and Schottky barrier properties of composite patterned metal/GaN interfaces

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Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma

D. Shamiryan; M. R. Baklanov; S. Vanhaelemeersch; K. Maex

J. Vac. Sci. Technol. B 20, 1923–1928 (2002) https://doi.org/10.1116/1.1502699

Abstract

View articletitled, Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma

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Copper sample analyzed with an n-doped silicon tip using conducting probe atomic force microscopy

Olivier Schneegans; Lionel Boyer; Frédéric Houzé; René Meyer; Pascal Chrétien

J. Vac. Sci. Technol. B 20, 1929–1934 (2002) https://doi.org/10.1116/1.1502702

Abstract

View articletitled, Copper sample analyzed with an n-doped silicon tip using conducting probe atomic force microscopy

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Dual imaging-unit atomic force microscope for nanometer order length metrology based on reference scales

Haijun Zhang; Dongxian Zhang; Xiaofeng Lin

J. Vac. Sci. Technol. B 20, 1935–1938 (2002) https://doi.org/10.1116/1.1502700

Abstract

View articletitled, Dual imaging-unit atomic force microscope for nanometer order length metrology based on reference scales

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Formation and removal of composite halogenated silicon oxide and fluorocarbon films deposited on chamber walls during plasma etching of multiple film stacks

Saurabh J. Ullal; Harmeet Singh; John Daugherty; Vahid Vahedi; Eray S. Aydil

J. Vac. Sci. Technol. B 20, 1939–1946 (2002) https://doi.org/10.1116/1.1502698

Abstract

View articletitled, Formation and removal of composite halogenated silicon oxide and fluorocarbon films deposited on chamber walls during plasma etching of multiple film stacks

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Characteristics of copper films deposited on $H_{2}$ -plasma-treated TaN substrate by chemical vapor deposition

Cheng-Li Lin; Peng-Sen Chen; Chun-Li Chang; Mao-Chieh Chen

J. Vac. Sci. Technol. B 20, 1947–1953 (2002) https://doi.org/10.1116/1.1502697

Abstract

View articletitled, Characteristics of copper films deposited on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub></math>-plasma-treated TaN substrate by chemical vapor deposition

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Strategies for purging the pellicle space for 157 nm lithography

Ryan L. Burns; David Punsalan; Maria C. Towidjaja; William J. Koros

J. Vac. Sci. Technol. B 20, 1954–1960 (2002) https://doi.org/10.1116/1.1502703

Abstract

View articletitled, Strategies for purging the pellicle space for 157 nm lithography

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Current gain degradation in SiGe HBTs by hot carriers

C. R. Gill; S. P. McAlister; C. Storey; W. R. McKinnon; S. Kovacic

J. Vac. Sci. Technol. B 20, 1961–1966 (2002) https://doi.org/10.1116/1.1503789

Abstract

View articletitled, Current gain degradation in SiGe HBTs by hot carriers

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Characterization of Ti-based nanocrystalline ternary nitride films

S. M. Aouadi; J. A. Chladek; F. Namavar; N. Finnegan; S. L. Rohde

J. Vac. Sci. Technol. B 20, 1967–1973 (2002) https://doi.org/10.1116/1.1503790

Abstract

View articletitled, Characterization of Ti-based nanocrystalline ternary nitride films

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Resist trimming in high-density ${CF}_{4} / O_{2}$ plasmas for sub-0.1 μm device fabrication

Chian-Yuh Sin; Bing-Hung Chen; W. L. Loh; J. Yu; P. Yelehanka; A. See; L. Chan

J. Vac. Sci. Technol. B 20, 1974–1981 (2002) https://doi.org/10.1116/1.1503791

Abstract

View articletitled, Resist trimming in high-density <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>4</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub></math> plasmas for sub-0.1 μm device fabrication

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Growth and electron field emission characteristics of nanodiamond films deposited in $N_{2} / {CH}_{4} / H_{2}$ microwave plasma-enhanced chemical vapor deposition

S. G. Wang; Qing Zhang; S. F. Yoon; J. Ahn; Q. Wang; Q. Zhou; D. J. Yang

J. Vac. Sci. Technol. B 20, 1982–1986 (2002) https://doi.org/10.1116/1.1503780

Abstract

View articletitled, Growth and electron field emission characteristics of nanodiamond films deposited in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mn>4</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub></math> microwave plasma-enhanced chemical vapor deposition

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Copper drift in methyl-doped silicon oxide film

Hao Cui; Ishwara B. Bhat; Shyam P. Murarka; Hongqiang Lu; Wei-Jen Hsia; Wilbur Catabay

J. Vac. Sci. Technol. B 20, 1987–1993 (2002) https://doi.org/10.1116/1.1503779

Abstract

View articletitled, Copper drift in methyl-doped silicon oxide film

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Laser interferometry as a diagnostic tool for the fabrication of reactive ion etching-edge-emitting lasers

E. Aperathitis; Z. Hatzopoulos; A. Georgakilas; L. Richeboeuf

J. Vac. Sci. Technol. B 20, 1994–1999 (2002) https://doi.org/10.1116/1.1505960

Abstract

View articletitled, Laser interferometry as a diagnostic tool for the fabrication of reactive ion etching-edge-emitting lasers

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Electrical properties of TiN films deposited by filtered cathodic vacuum arc

Y. H. Cheng; B. K. Tay; S. P. Lau

J. Vac. Sci. Technol. B 20, 2000–2006 (2002) https://doi.org/10.1116/1.1505957

Abstract

View articletitled, Electrical properties of TiN films deposited by filtered cathodic vacuum arc

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Plasma etching of thick polynorbornene layers for electronic packaging applications

Yiming Li; Dennis W. Hess

J. Vac. Sci. Technol. B 20, 2007–2012 (2002) https://doi.org/10.1116/1.1506175

Abstract

View articletitled, Plasma etching of thick polynorbornene layers for electronic packaging applications

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Etchless fabrication of photonic crystals in silicon

Janusz Murakowski; David Pustai; Dennis Prather

J. Vac. Sci. Technol. B 20, 2013–2016 (2002) https://doi.org/10.1116/1.1505958

Abstract

View articletitled, Etchless fabrication of photonic crystals in silicon

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Wet-etching selectivity of Ag-photodoped AsGeSeS thin films and the fabrication of a planar corrugated one-dimensional photonic crystal by a holographic method

Hyun-Yong Lee; Takafumi Yao

J. Vac. Sci. Technol. B 20, 2017–2023 (2002) https://doi.org/10.1116/1.1505956

Abstract

View articletitled, Wet-etching selectivity of Ag-photodoped AsGeSeS thin films and the fabrication of a planar corrugated one-dimensional photonic crystal by a holographic method

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Design of notched gate processes in high density plasmas

J. Foucher; G. Cunge; L. Vallier; O. Joubert

J. Vac. Sci. Technol. B 20, 2024–2031 (2002) https://doi.org/10.1116/1.1505959

Abstract

View articletitled, Design of notched gate processes in high density plasmas

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Influence of potential fluctuations on Landau quantization and spin splitting studied by low temperature scanning tunneling spectroscopy on InAs(110)

M. Morgenstern; V. Gudmundsson; R. Wiesendanger

J. Vac. Sci. Technol. B 20, 2032–2035 (2002) https://doi.org/10.1116/1.1506906

Abstract

View articletitled, Influence of potential fluctuations on Landau quantization and spin splitting studied by low temperature scanning tunneling spectroscopy on InAs(110)

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Synthesis of organically modified mesoporous silica as a low dielectric constant intermetal dielectric

Suzhu Yu; Terence K. S. Wong; Kantisara Pita; Xiao Hu

J. Vac. Sci. Technol. B 20, 2036–2042 (2002) https://doi.org/10.1116/1.1506904

Abstract

View articletitled, Synthesis of organically modified mesoporous silica as a low dielectric constant intermetal dielectric

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Influence of parameters and substrates on the diameter of ${CuInSe}_{2}$ nanoparticle thin films by rf reactive sputtering

Shiyong Huang; Lide Zhang; Zhenhong Dai; Xiaoguang Zhu; Fenggin Qu; Shengqi Fu

J. Vac. Sci. Technol. B 20, 2043–2046 (2002) https://doi.org/10.1116/1.1506903

Abstract

View articletitled, Influence of parameters and substrates on the diameter of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuInSe</mi><mrow><mn>2</mn></mrow></msub></math> nanoparticle thin films by rf reactive sputtering

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Phase transformation of thin sputter-deposited tungsten films at room temperature

S. M. Rossnagel; I. C. Noyan; C. Cabral, Jr.

J. Vac. Sci. Technol. B 20, 2047–2051 (2002) https://doi.org/10.1116/1.1506905

Abstract

View articletitled, Phase transformation of thin sputter-deposited tungsten films at room temperature

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Interfaces in copper nanoconnections

P. Heino; E. Ristolainen

J. Vac. Sci. Technol. B 20, 2052–2057 (2002) https://doi.org/10.1116/1.1510529

Abstract

View articletitled, Interfaces in copper nanoconnections

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Electrical characterization of micro-organisms using microfabricated devices

H. Chang; A. Ikram; F. Kosari; G. Vasmatzis; A. Bhunia; R. Bashir

J. Vac. Sci. Technol. B 20, 2058–2064 (2002) https://doi.org/10.1116/1.1508805

Abstract

View articletitled, Electrical characterization of micro-organisms using microfabricated devices

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Exposed area ratio dependent etching in a submicron self-aligned contact etching

J. Kim; C. W. Chu; C. J. Kang; W. S. Han; J. T. Moon

J. Vac. Sci. Technol. B 20, 2065–2070 (2002) https://doi.org/10.1116/1.1508819

Abstract

View articletitled, Exposed area ratio dependent etching in a submicron self-aligned contact etching

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Submicron technology for III-nitride semiconductors

T. Palacios; F. Calle; E. Monroy; E. Muñoz

J. Vac. Sci. Technol. B 20, 2071–2074 (2002) https://doi.org/10.1116/1.1508820

Abstract

View articletitled, Submicron technology for III-nitride semiconductors

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Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals

G. Ammendola; M. Vulpio; M. Bileci; N. Nastasi; C. Gerardi; G. Renna; I. Crupi; G. Nicotra; S. Lombardo

J. Vac. Sci. Technol. B 20, 2075–2079 (2002) https://doi.org/10.1116/1.1508804

Abstract

View articletitled, Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals

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Drastic changes in the field emission characteristics of a Mo-tip field emitter array having ${PH}_{3}$ -doped a-Si:H as a resistive layer material throughout vacuum packaging processes in a field emission display

J. K. Ha; B. H. Chung; S. Y. Han; J. O. Choi

J. Vac. Sci. Technol. B 20, 2080–2084 (2002) https://doi.org/10.1116/1.1508817

Abstract

View articletitled, Drastic changes in the field emission characteristics of a Mo-tip field emitter array having <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PH</mi><mrow><mn>3</mn></mrow></msub></math>-doped a-Si:H as a resistive layer material throughout vacuum packaging processes in a field emission display

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Inductively coupled plasma etching for arrayed waveguide gratings fabrication in silica on silicon technology

S. Bretoiu; D. Di Mola; E. Fioravanti; S. Visona

J. Vac. Sci. Technol. B 20, 2085–2090 (2002) https://doi.org/10.1116/1.1510528

Abstract

View articletitled, Inductively coupled plasma etching for arrayed waveguide gratings fabrication in silica on silicon technology

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Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy

W. K. Loke; S. F. Yoon; T. K. Ng; S. Z. Wang; W. J. Fan

J. Vac. Sci. Technol. B 20, 2091–2095 (2002) https://doi.org/10.1116/1.1508818

Abstract

View articletitled, Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy

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Simple and high-precision asymmetric gate-recess process for ultrafast InP-based high electron mobility transistors

Keisuke Shinohara; Toshiaki Matsui; Yoshimi Yamashita; Akira Endoh; Kohki Hikosaka; Takashi Mimura; Satoshi Hiyamizu

J. Vac. Sci. Technol. B 20, 2096–2100 (2002) https://doi.org/10.1116/1.1510527

Abstract

View articletitled, Simple and high-precision asymmetric gate-recess process for ultrafast InP-based high electron mobility transistors

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Comparison of experimental and theoretical scanning capacitance microscope signals and their impact on the accuracy of determined two-dimensional carrier profiles

J. J. Kopanski; J. F. Marchiando; B. G. Rennex

J. Vac. Sci. Technol. B 20, 2101–2107 (2002) https://doi.org/10.1116/1.1511238

Abstract

View articletitled, Comparison of experimental and theoretical scanning capacitance microscope signals and their impact on the accuracy of determined two-dimensional carrier profiles

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Positive resist for KrF excimer laser lithography

S. J. Park; I. H. Kim; Y. J. Kang; H. Lee; S. H. Lee; S. J. Choi

J. Vac. Sci. Technol. B 20, 2108–2112 (2002) https://doi.org/10.1116/1.1511213

Abstract

View articletitled, Positive resist for KrF excimer laser lithography

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Modeling oxide etching in a magnetically enhanced reactive ion plasma using neural networks

Byungwhan Kim; Kwang-Ho Kwon; Sung-Ku Kwon; Jong-Moon Park; Seong Wook Yoo; Kun-Sik Park; Bo-Woo Kim

J. Vac. Sci. Technol. B 20, 2113–2119 (2002) https://doi.org/10.1116/1.1511212

Abstract

View articletitled, Modeling oxide etching in a magnetically enhanced reactive ion plasma using neural networks

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Influences of reaction products on etch rates and linewidths in a poly-Si/oxide etching process using ${HBr/O}_{2}$ based inductively coupled plasma

K. Miwa; T. Mukai

J. Vac. Sci. Technol. B 20, 2120–2125 (2002) https://doi.org/10.1116/1.1511216

Abstract

View articletitled, Influences of reaction products on etch rates and linewidths in a poly-Si/oxide etching process using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HBr/O</mi><mrow><mn>2</mn></mrow></msub></math> based inductively coupled plasma

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Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

D. Ban; E. H. Sargent; St. J. Dixon-Warren; T. Grevatt; G. Knight; G. Pakulski; A. J. SpringThorpe; R. Streater; J. K. White

J. Vac. Sci. Technol. B 20, 2126–2132 (2002) https://doi.org/10.1116/1.1511211

Abstract

View articletitled, Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

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Kelvin probe force microscopy of beveled semiconductors

R. S. Ferguson; K. Fobelets; L. F. Cohen

J. Vac. Sci. Technol. B 20, 2133–2136 (2002) https://doi.org/10.1116/1.1511215

Abstract

View articletitled, Kelvin probe force microscopy of beveled semiconductors

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Ion flux composition in $HBr / {Cl}_{2} / O_{2}$ and $HBr / {Cl}_{2} / O_{2} / {CF}_{4}$ chemistries during silicon etching in industrial high-density plasmas

G. Cunge; R. L. Inglebert; O. Joubert; L. Vallier; N. Sadeghi

J. Vac. Sci. Technol. B 20, 2137–2148 (2002) https://doi.org/10.1116/1.1511219

Abstract

View articletitled, Ion flux composition in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">HBr</mi><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">HBr</mi><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>4</mn></mrow></msub></math> chemistries during silicon etching in industrial high-density plasmas

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Microleveling mechanisms and applications of electropolishing on planarization of copper metallization

Shih-Chieh Chang; Jia-Min Shieh; Chih-Chang Huang; Bau-Tong Dai; Ying-Hao Li; Ming-Shiann Feng

J. Vac. Sci. Technol. B 20, 2149–2153 (2002) https://doi.org/10.1116/1.1511218

Abstract

View articletitled, Microleveling mechanisms and applications of electropolishing on planarization of copper metallization

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Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment

Keng-Liang Ou; Wen-Fa Wu; Chang-Pin Chou; Shi-Yung Chiou; Chi-Chang Wu

J. Vac. Sci. Technol. B 20, 2154–2161 (2002) https://doi.org/10.1116/1.1511214

Abstract

View articletitled, Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment

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Micromolar concentrations of base quenchers impact the apparent efficiency of photoacid generation in chemically amplified resists

Adam R. Pawloski; Christian; Paul F. Nealey

J. Vac. Sci. Technol. B 20, 2162–2168 (2002) https://doi.org/10.1116/1.1511217

Abstract

View articletitled, Micromolar concentrations of base quenchers impact the apparent efficiency of photoacid generation in chemically amplified resists

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Edge termination design and simulation for bulk GaN rectifiers

K. H. Baik; Y. Irokawa; F. Ren; S. J. Pearton; S. S. Park; S. K. Lee

J. Vac. Sci. Technol. B 20, 2169–2172 (2002) https://doi.org/10.1116/1.1511210

Abstract

View articletitled, Edge termination design and simulation for bulk GaN rectifiers

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Tunable emission from InAs quantum dots on InP nanotemplates

J. Lefebvre; P. J. Poole; G. C. Aers; D. Chithrani; R. L. Williams

J. Vac. Sci. Technol. B 20, 2173–2176 (2002) https://doi.org/10.1116/1.1500747

Abstract

View articletitled, Tunable emission from InAs quantum dots on InP nanotemplates

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