Skip Nav Destination

Issues

Select Year

Issue

REVIEW ARTICLE

Miniature fuel cells for portable power: Design considerations and challenges

Helen L. Maynard; Jeremy P. Meyers

J. Vac. Sci. Technol. B 20, 1287–1297 (2002) https://doi.org/10.1116/1.1488641

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

REGULAR ARTICLES

Control of shape of silicon needles fabricated by highly selective anisotropic dry etching

Masakazu Kanechika; Noriaki Sugimoto; Yasuichi Mitsushima

J. Vac. Sci. Technol. B 20, 1298–1302 (2002) https://doi.org/10.1116/1.1484100

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Probabilistic gel formation theory in negative tone chemically amplified resists used in optical and electron beam lithography

G. P. Patsis; N. Glezos

J. Vac. Sci. Technol. B 20, 1303–1310 (2002) https://doi.org/10.1116/1.1484099

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Wetting effect on gap filling submicron damascene by an electrolyte free of levelers

Shih-Chieh Chang; Jia-Min Shieh; Kun-Cheng Lin; Bau-Tong Dai; Ting-Chun Wang; Chia-Fu Chen; Ming-Shiann Feng; Ying-Hao Li; Chih-Peng Lu

J. Vac. Sci. Technol. B 20, 1311–1316 (2002) https://doi.org/10.1116/1.1486231

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Characterization of the crotalus durissus terrificus venom by atomic force microscopy

Vitor Baranauskas; Doroty Mesquita Dourado; Zhao Jingguo; Maria Alice da Cruz-Höfling

J. Vac. Sci. Technol. B 20, 1317–1320 (2002) https://doi.org/10.1116/1.1486007

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition

H. Kim; C. Cabral, Jr.; C. Lavoie; S. M. Rossnagel

J. Vac. Sci. Technol. B 20, 1321–1326 (2002) https://doi.org/10.1116/1.1486233

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effect of $H_{2}$ on the etch profile of InP/InGaAsP alloys in ${Cl}_{2} / Ar / H_{2}$ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Sean L. Rommel; Jae-Hyung Jang; Wu Lu; Gabriel Cueva; Ling Zhou; Ilesanmi Adesida; Gary Pajer; Ralph Whaley; Allen Lepore; Zane Schellanbarger; Joseph H. Abeles

J. Vac. Sci. Technol. B 20, 1327–1330 (2002) https://doi.org/10.1116/1.1486232

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Silicon dioxide film with lower deposition temperature in hot-wall, single-type chamber

Soosik Yoon; Haejin Park; Juho Song

J. Vac. Sci. Technol. B 20, 1331–1333 (2002) https://doi.org/10.1116/1.1488642

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

Y. S. Mor; T. C. Chang; P. T. Liu; T. M. Tsai; C. W. Chen; S. T. Yan; C. J. Chu; W. F. Wu; F. M. Pan; Water Lur; S. M. Sze

J. Vac. Sci. Technol. B 20, 1334–1338 (2002) https://doi.org/10.1116/1.1488645

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Gallium nitride: Method of defect characterization by wet oxidation in an oxalic acid electrolytic cell

Sri Priya Sundararajan; David Crouse; Yu-Hwa Lo

J. Vac. Sci. Technol. B 20, 1339–1341 (2002) https://doi.org/10.1116/1.1488644

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Study of the acid-diffusion effect on line edge roughness using the edge roughness evaluation method

Masaki Yoshizawa; Shigeru Moriya

J. Vac. Sci. Technol. B 20, 1342–1347 (2002) https://doi.org/10.1116/1.1490392

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electrical contrast observations and voltage measurements by Kelvin probe force gradient microscopy

P. Girard; M. Ramonda; D. Saluel

J. Vac. Sci. Technol. B 20, 1348–1355 (2002) https://doi.org/10.1116/1.1490387

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Molecular beam epitaxy of IV–VI mid-infrared vertical cavity surface-emitting quantum well laser structures

H. Wu; F. Zhao; L. Jayasinghe; Z. Shi

J. Vac. Sci. Technol. B 20, 1356–1359 (2002) https://doi.org/10.1116/1.1490385

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Characteristics of ${HfO}_{2} / {HfSi}_{x} O_{y}$ film as an alternative gate dielectric in metal–oxide–semiconductor devices

Hyeoksu Kang; Yonghan Roh; Geunhag Bae; Donggeun Jung; Cheol-Woong Yang

J. Vac. Sci. Technol. B 20, 1360–1363 (2002) https://doi.org/10.1116/1.1490383

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Improved ${GaN}_{x} {As}_{1−x}$ quality grown by molecular beam epitaxy with dispersive nitrogen source

S. Z. Wang; S. F. Yoon; W. K. Loke; T. K. Ng; W. J. Fan

J. Vac. Sci. Technol. B 20, 1364–1367 (2002) https://doi.org/10.1116/1.1490391

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Structure and photoluminescence features of nanocrystalline $Si / {SiO}_{2}$ films produced by plasma chemical vapor deposition and post-treatment

Xiaochun Wu; Ch. Ossadnik; Ch. Eggs; S. Veprek; F. Phillipp

J. Vac. Sci. Technol. B 20, 1368–1378 (2002) https://doi.org/10.1116/1.1490389

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Getter requirements for a cathode ray tube with a diamond coated field emitter electron source

Vincenc Nemanič; Marko Žumer; Bojan Zajec; Talmage Tyler

J. Vac. Sci. Technol. B 20, 1379–1383 (2002) https://doi.org/10.1116/1.1490384

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Impact of pitting defect on 0.25 μm standard random access memory

C. M. Chiu; T. F. Yen; K-F. Chiu

J. Vac. Sci. Technol. B 20, 1384–1387 (2002) https://doi.org/10.1116/1.1490386

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Improvements of characteristics of fluorinated dielectric films integrated as interlayer dielectrics

Jia-Min Shieh; Kou-Chiang Tsai; Shich-Chang Suen; Bau-Tong Dai

J. Vac. Sci. Technol. B 20, 1388–1393 (2002) https://doi.org/10.1116/1.1490390

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effects of a Ni cap layer on transparent Ni/Au ohmic contacts to $p$ -GaN

B. Liu; E. Lambers; W. B. Alexander; P. H. Holloway

J. Vac. Sci. Technol. B 20, 1394–1401 (2002) https://doi.org/10.1116/1.1490388

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline ${SrTiO}_{3}$ films

Yi Wei; Xiaoming Hu; Yong Liang; D. C. Jordan; Brad Craigo; Ravi Droopad; Z. Yu; Alex Demkov; John L. Edwards, Jr.; William J. Ooms

J. Vac. Sci. Technol. B 20, 1402–1405 (2002) https://doi.org/10.1116/1.1491547

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor technology

Anri Nakajima; Quazi Deen Mohd Khosru; Takashi Yoshimoto; Toshirou Kidera; Shin Yokoyama

J. Vac. Sci. Technol. B 20, 1406–1409 (2002) https://doi.org/10.1116/1.1491550

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire

Dae Hwan Kim; Suk-Kang Sung; Kyung Rok Kim; Jong Duk Lee; Byung-Gook Park

J. Vac. Sci. Technol. B 20, 1410–1418 (2002) https://doi.org/10.1116/1.1491551

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Morphological evolution of epitaxial cobalt–semiconductor compound layers during growth in a scanning tunneling microscope

I. Goldfarb; G. A. D. Briggs

J. Vac. Sci. Technol. B 20, 1419–1426 (2002) https://doi.org/10.1116/1.1491555

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electrical characteristics of polycrystalline silicon thin film transistors using the Cu-field aided lateral crystallization process

Se-Youl Kwon; Kyoung-Wan Park; Jae-Bok Lee; Duck-Kyun Choi

J. Vac. Sci. Technol. B 20, 1427–1430 (2002) https://doi.org/10.1116/1.1491552

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Thermal effects in atomic-order nitridation of Si by a nitrogen plasma

Takuya Seino; Daisuke Muto; Takashi Matsuura; Junichi Murota

J. Vac. Sci. Technol. B 20, 1431–1435 (2002) https://doi.org/10.1116/1.1491553

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Triple crystal diffractometry, x-ray standing wave, and transmission electron microscopy investigation of shallow ${BF}_{2}$ implantation in Si

C. Bocchi; F. Germini; G. Ghezzi; E. Gombia; R. Mosca; L. Nasi; E. Kh. Mukhamedzhanov; V. Privitera; C. Spinella

J. Vac. Sci. Technol. B 20, 1436–1443 (2002) https://doi.org/10.1116/1.1491548

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Comparison of two different Ti/Al/Ti/Au ohmic metallization schemes for AlGaN/GaN

J. A. Bardwell; G. I. Sproule; Y. Liu; H. Tang; J. B. Webb; J. Fraser; P. Marshall

J. Vac. Sci. Technol. B 20, 1444–1447 (2002) https://doi.org/10.1116/1.1491549

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Influence of in situ ultrasound treatment during ion implantation on amorphization and junction formation in silicon

D. Krüger; B. Romanyuk; V. Melnik; Ya. Olikh; R. Kurps

J. Vac. Sci. Technol. B 20, 1448–1451 (2002) https://doi.org/10.1116/1.1493784

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Enhancement of implantation efficiency by grid biasing in radio-frequency inductively coupled plasma direct-current plasma immersion ion implantation

Honghui Tong; Ricky K. Y. Fu; Xuchu Zeng; Dixon T. K. Kwok; Paul K. Chu

J. Vac. Sci. Technol. B 20, 1452–1456 (2002) https://doi.org/10.1116/1.1494064

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Studies on the plasma localization of a magnetic neutral loop discharge using normalized radio frequency electric field

Youl-Moon Sung; Chikahisa Honda

J. Vac. Sci. Technol. B 20, 1457–1464 (2002) https://doi.org/10.1116/1.1494065

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Process and realization of a three-dimensional gold electroplated antenna on a flexible epoxy film for wireless micromotion system

Philippe Basset; Andreas Kaiser; Dominique Collard; Lionel Buchaillot

J. Vac. Sci. Technol. B 20, 1465–1470 (2002) https://doi.org/10.1116/1.1494066

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

TiSiN films produced by chemical vapor deposition as diffusion barriers for Cu metallization

S. Joseph; M. Eizenberg; C. Marcadal; L. Chen

J. Vac. Sci. Technol. B 20, 1471–1475 (2002) https://doi.org/10.1116/1.1494068

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple $H_{2}$ plasma treatment

Jia-Min Shieh; Kou-Chiang Tsai; Bau-Tong Dai; Yew-Chung Wu; Yu-Hen Wu

J. Vac. Sci. Technol. B 20, 1476–1481 (2002) https://doi.org/10.1116/1.1494067

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Photoresist selectivity mechanism in ${SiO}_{2}$ etching by inductively coupled plasma using fluorocarbon gases

Shin-ichi Imai; Hideki Motomura; Kunihide Tachibana

J. Vac. Sci. Technol. B 20, 1482–1488 (2002) https://doi.org/10.1116/1.1495503

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Formation of InAs/GaAs quantum dots by dewetting during cooling

R. P. Mirin; A. Roshko; M. van der Puijl; A. G. Norman

J. Vac. Sci. Technol. B 20, 1489–1492 (2002) https://doi.org/10.1116/1.1495094

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Room temperature oscillation of self-organized ${In}_{0.2} {Ga}_{0.8} As / GaAs$ quantum wire lasers grown on (221)A GaAs substrates by molecular beam epitaxy

H. Kanamori; K. Hyodo; Y. Ohno; S. Shimomura; S. Hiyamizu; Y. Okamoto

J. Vac. Sci. Technol. B 20, 1493–1495 (2002) https://doi.org/10.1116/1.1495004

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Microstructural interpretation of Ni ohmic contact on n-type 4H–SiC

Sang Youn Han; Jong-Yoon Shin; Byung-Teak Lee; Jong-Lam Lee

J. Vac. Sci. Technol. B 20, 1496–1500 (2002) https://doi.org/10.1116/1.1495506

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Magneto–photoluminescence study of intermixed self-assembled InAs/GaAs quantum dots

S. Ménard; J. Beerens; D. Morris; V. Aimez; J. Beauvais; S. Fafard

J. Vac. Sci. Technol. B 20, 1501–1507 (2002) https://doi.org/10.1116/1.1495504

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing

M. Boufnichel; S. Aachboun; F. Grangeon; P. Lefaucheux; P. Ranson

J. Vac. Sci. Technol. B 20, 1508–1513 (2002) https://doi.org/10.1116/1.1495505

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Selective and deep plasma etching of ${SiO}_{2} :$ Comparison between different fluorocarbon gases $({CF}_{4},$ $C_{2} F_{6},$ ${CHF}_{3})$ mixed with ${CH}_{4}$ or $H_{2}$ and influence of the residence time

F. Gaboriau; G. Cartry; M-C. Peignon; Ch. Cardinaud

J. Vac. Sci. Technol. B 20, 1514–1521 (2002) https://doi.org/10.1116/1.1495502

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Ta and Ta–N diffusion barriers sputtered with various $N_{2} / Ar$ ratios for Cu metallization

J. H. Wang; L. J. Chen; Z. C. Lu; C. S. Hsiung; W. Y. Hsieh; T. R. Yew

J. Vac. Sci. Technol. B 20, 1522–1526 (2002) https://doi.org/10.1116/1.1495906

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Real-time spectro-ellipsometric characterization of $Si / {Si}_{1−x} {Ge}_{x}$ multiple quantum wells grown on Si(100) substrates

Housei Akazawa

J. Vac. Sci. Technol. B 20, 1527–1536 (2002) https://doi.org/10.1116/1.1495874

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Formation of Ag nanometer particles at the interface of Ag thin film and poly(ethylene terephthalate) substrate under visible light irradiation

S. Fukuda; S. Kawamoto; Y. Gotoh; S. Nozaki; M. Nakaura

J. Vac. Sci. Technol. B 20, 1537–1541 (2002) https://doi.org/10.1116/1.1495875

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Wafer temperature measurements during dielectric etching in a MERIE etcher

Calvin T. Gabriel

J. Vac. Sci. Technol. B 20, 1542–1547 (2002) https://doi.org/10.1116/1.1495905

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Low temperature remote plasma cleaning of the fluorocarbon and polymerized residues formed during contact hole dry etching

Hyungtak Seo; Sung Bae Kim; Jongkook Song; Yangdo Kim; Hyun Soh; Young Chai Kim; Hyeongtag Jeon

J. Vac. Sci. Technol. B 20, 1548–1555 (2002) https://doi.org/10.1116/1.1495904

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

BRIEF REPORTS AND COMMENTS

Impact of the colloidal silica particle size on physical vapor deposition tungsten removal rate and surface roughness

D. Bouvet; P. Beaud; P. Fazan; R. Sanjines; E. Jacquinot

J. Vac. Sci. Technol. B 20, 1556–1560 (2002) https://doi.org/10.1116/1.1490393

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment

T. C. Chang; P. T. Liu; Y. S. Mor; T. M. Tsai; C. W. Chen; Y. J. Mei; F. M. Pan; W. F. Wu; S. M. Sze

J. Vac. Sci. Technol. B 20, 1561–1566 (2002) https://doi.org/10.1116/1.1495876

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Atomic resolution imaging of a single-crystal Cu (100) surface by scanning tunneling microscopy in ultrahigh vacuum at room temperature

Z. Q. Zou; Z. C. Dong; A. S. Trifonov; H. Nejo

J. Vac. Sci. Technol. B 20, 1567–1569 (2002) https://doi.org/10.1116/1.1495903

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

RAPID COMMUNICATIONS

Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma

Jing Chen; Meng Chen; Yemin Dong; Xiang Wang; Zhihong Zheng; Xi Wang

J. Vac. Sci. Technol. B 20, 1570–1573 (2002) https://doi.org/10.1116/1.1488643

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistor

Kyoung Jin Choi; Chang Min Jeon; Ho Won Jang; Jong-Lam Lee

J. Vac. Sci. Technol. B 20, 1574–1577 (2002) https://doi.org/10.1116/1.1491554

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

ERRATA

Erratum: “Proximity exposure effect analysis using the phenomenon of resist debris formation in electron beam lithography” [J. Vac. Sci. Technol. B 20, 710 (2002)]

P. R. Deshmukh

J. Vac. Sci. Technol. B 20, 1578 (2002) https://doi.org/10.1116/1.1497167

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

PAPERS FROM THE 29TH CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES

MAGNETISM; MAGNETIC-SEMICONDUCTOR HETEROSTRUCTURES AND INTERFACES

Ferromagnetism in (In,Mn)As diluted magnetic semiconductor thin films grown by metalorganic vapor phase epitaxy

A. J. Blattner; B. W. Wessels

J. Vac. Sci. Technol. B 20, 1582–1585 (2002) https://doi.org/10.1116/1.1491991

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties

S. Tari; R. Sporken; T. Aoki; David J. Smith; V. Metlushko; K. AbuEl-Rub; S. Sivananthan

J. Vac. Sci. Technol. B 20, 1586–1590 (2002) https://doi.org/10.1116/1.1491992

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Structure and interface composition of Co layers grown on As-rich GaAs(001) $c(4×4)$ surfaces

K. Lüdge; B. D. Schultz; P. Vogt; M. M. R. Evans; W. Braun; C. J. Palmstrøm; W. Richter; N. Esser

J. Vac. Sci. Technol. B 20, 1591–1599 (2002) https://doi.org/10.1116/1.1491993

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

ErAs interlayers for limiting interfacial reactions in Fe/GaAs(100) heterostructures

B. D. Schultz; H. H. Farrell; M. M. R. Evans; K. Lüdge; C. J. Palmstro/m

J. Vac. Sci. Technol. B 20, 1600–1608 (2002) https://doi.org/10.1116/1.1491994

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Characterization for strontium $titinate / {Fe}_{3} O_{4}$ and ${TiN/Fe}_{3} O_{4}$ interfaces

A. Lussier; Y. U. Idzerda; S. Stadler; S. B. Ogale; S. R. Shinde; V. Venkatesan

J. Vac. Sci. Technol. B 20, 1609–1613 (2002) https://doi.org/10.1116/1.1491538

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

ORGANIC-INORGANIC INTERFACES

Interactions of alkylamines with the silicon (001) surface

Xiaoping Cao; Robert J. Hamers

J. Vac. Sci. Technol. B 20, 1614–1619 (2002) https://doi.org/10.1116/1.1490381

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Core level photoemission and scanning tunneling microscopy study of the interaction of pentacene with the Si(100) surface

Greg Hughes; Jason Roche; Darren Carty; Tony Cafolla; Kevin E. Smith

J. Vac. Sci. Technol. B 20, 1620–1625 (2002) https://doi.org/10.1116/1.1491546

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

WIDE-BANDGAP SEMICONDUCTORS; HETEROSTRUCTURES AND INTERFACES

Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy

O. Brandt; P. Waltereit; S. Dhar; U. Jahn; Y. J. Sun; A. Trampert; K. H. Ploog; M. A. Tagliente; L. Tapfer

J. Vac. Sci. Technol. B 20, 1626–1639 (2002) https://doi.org/10.1116/1.1491540

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Role of hydrogen in surface reconstructions and growth of GaN

Chris G. Van de Walle; J. Neugebauer

J. Vac. Sci. Technol. B 20, 1640–1646 (2002) https://doi.org/10.1116/1.1491545

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Mechanism of anomalous current transport in n-type GaN Schottky contacts

Hideki Hasegawa; Susumu Oyama

J. Vac. Sci. Technol. B 20, 1647–1655 (2002) https://doi.org/10.1116/1.1491539

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Control of ZnO film polarity

Soon-Ku Hong; Hang-Ju Ko; Yefen Chen; Takafumi Yao

J. Vac. Sci. Technol. B 20, 1656–1663 (2002) https://doi.org/10.1116/1.1491544

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Steps on the (001) ${SrTiO}_{3}$ surface

Xiaodong Zhang; Alexander A. Demkov

J. Vac. Sci. Technol. B 20, 1664–1670 (2002) https://doi.org/10.1116/1.1496513

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

DIAGNOSTICS, SCANNED AND OTHER

Scanning capacitance spectroscopy of an ${Al}_{x} {Ga}_{1−x} N/GaN$ heterostructure field-effect transistor structure: Analysis of probe tip effects

D. M. Schaadt; E. T. Yu

J. Vac. Sci. Technol. B 20, 1671–1676 (2002) https://doi.org/10.1116/1.1491536

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Scanning tunneling potentiometry of semiconductor junctions

Yang Dong; R. M. Feenstra; R. Hey; K. H. Ploog

J. Vac. Sci. Technol. B 20, 1677–1681 (2002) https://doi.org/10.1116/1.1491535

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Scanning spreading resistance microscopy current transport studies on doped $III - V$ semiconductors

R. P. Lu; K. L. Kavanagh; St. J. Dixon-Warren; A. J. SpringThorpe; R. Streater; I. Calder

J. Vac. Sci. Technol. B 20, 1682–1689 (2002) https://doi.org/10.1116/1.1496512

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering

C. F. McConville; S. H. Al-Harthi; M. G. Dowsett; F. S. Gard; T. J. Ormsby; B. Guzman; T. C. Q. Noakes; P. Bailey

J. Vac. Sci. Technol. B 20, 1690–1698 (2002) https://doi.org/10.1116/1.1491987

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces

J.-F. T. Wang; G. D. Powell; R. S. Johnson; G. Lucovsky; D. E. Aspnes

J. Vac. Sci. Technol. B 20, 1699–1705 (2002) https://doi.org/10.1116/1.1493783

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

SILICON-DIELECTRIC INTERFACES

Controlling the threshold voltage of a metal–oxide–semiconductor field effect transistor by molecular protonation of the ${Si:SiO}_{2}$ interface

Jinman Yang; L. de la Garza; T. J. Thornton; M. Kozicki; D. Gust

J. Vac. Sci. Technol. B 20, 1706–1709 (2002) https://doi.org/10.1116/1.1491543

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electronic structure of ${SiO}_{2} :$ Charge redistribution contributions to the dynamic dipoles/effective charges of the infrared active normal modes

J. L. Whitten; Y. Zhang; M. Menon; G. Lucovsky

J. Vac. Sci. Technol. B 20, 1710–1719 (2002) https://doi.org/10.1116/1.1490382

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Defects at the interface of (100)Si with ultrathin layers of ${SiO}_{x},$ ${Al}_{2} O_{3},$ and ${ZrO}_{2}$ probed by electron spin resonance

A. Stesmans; V. V. Afanas’ev

J. Vac. Sci. Technol. B 20, 1720–1725 (2002) https://doi.org/10.1116/1.1491542

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electronic states at the interface of Ti–Si oxide on Si(100)

C. C. Fulton; G. Lucovsky; R. J. Nemanich

J. Vac. Sci. Technol. B 20, 1726–1731 (2002) https://doi.org/10.1116/1.1493785

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Interface electronic structure of ${Ta}_{2} O_{5} - {Al}_{2} O_{3}$ alloys for Si-field-effect transistor gate dielectric applications

M. D. Ulrich; R. S. Johnson; J. G. Hong; J. E. Rowe; G. Lucovsky; J. S. Quinton; T. E. Madey

J. Vac. Sci. Technol. B 20, 1732–1738 (2002) https://doi.org/10.1116/1.1493786

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys

G. Lucovsky; Y. Zhang; G. B. Rayner, Jr.; G. Appel; H. Ade; J. L. Whitten

J. Vac. Sci. Technol. B 20, 1739–1747 (2002) https://doi.org/10.1116/1.1493787

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films

G. B. Rayner, Jr.; D. Kang; Y. Zhang; G. Lucovsky

J. Vac. Sci. Technol. B 20, 1748–1758 (2002) https://doi.org/10.1116/1.1493788

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

COMPOUND SEMICONDUCTORS; SURFACES AND INTERFACES

Surface and interface properties of ${In}_{0.8} {Ga}_{0.2} As$ metal–insulator–semiconductor structures

H. H. Wieder; Huseyin Sari

J. Vac. Sci. Technol. B 20, 1759–1765 (2002) https://doi.org/10.1116/1.1491537

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Plasmon damping in molecular beam epitaxial-grown InAs(100)

T. D. Veal; G. R. Bell; C. F. McConville

J. Vac. Sci. Technol. B 20, 1766–1770 (2002) https://doi.org/10.1116/1.1491541

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Anion exchange at the interfaces of mixed anion III–V heterostructures grown by molecular beam epitaxy

Terence Brown; April Brown; Gary May

J. Vac. Sci. Technol. B 20, 1771–1776 (2002) https://doi.org/10.1116/1.1491988

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Valence band offset at the CdS/CdTe interface

P. Boieriu; R. Sporken; S. Sivananthan

J. Vac. Sci. Technol. B 20, 1777–1780 (2002) https://doi.org/10.1116/1.1491989

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Ballistic electron emission microscopy studies of ZnSe–BeTe heterojunctions

A. Chahboun; V. Fink; M. Fleischauer; K. L. Kavanagh; R. P. Lu; L. Hansen; C. R. Becker; L. W. Molenkamp

J. Vac. Sci. Technol. B 20, 1781–1787 (2002) https://doi.org/10.1116/1.1491990

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Issues

REVIEW ARTICLE

REGULAR ARTICLES

BRIEF REPORTS AND COMMENTS

RAPID COMMUNICATIONS

ERRATA

PAPERS FROM THE 29TH CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES

MAGNETISM; MAGNETIC-SEMICONDUCTOR HETEROSTRUCTURES AND INTERFACES

ORGANIC-INORGANIC INTERFACES

WIDE-BANDGAP SEMICONDUCTORS; HETEROSTRUCTURES AND INTERFACES

DIAGNOSTICS, SCANNED AND OTHER

SILICON-DIELECTRIC INTERFACES

COMPOUND SEMICONDUCTORS; SURFACES AND INTERFACES

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only