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REVIEW ARTICLE

J. Vac. Sci. Technol. B 20, 1287–1297 (2002) https://doi.org/10.1116/1.1488641

REGULAR ARTICLES

J. Vac. Sci. Technol. B 20, 1298–1302 (2002) https://doi.org/10.1116/1.1484100
J. Vac. Sci. Technol. B 20, 1303–1310 (2002) https://doi.org/10.1116/1.1484099
J. Vac. Sci. Technol. B 20, 1311–1316 (2002) https://doi.org/10.1116/1.1486231
J. Vac. Sci. Technol. B 20, 1317–1320 (2002) https://doi.org/10.1116/1.1486007
J. Vac. Sci. Technol. B 20, 1321–1326 (2002) https://doi.org/10.1116/1.1486233
J. Vac. Sci. Technol. B 20, 1327–1330 (2002) https://doi.org/10.1116/1.1486232
J. Vac. Sci. Technol. B 20, 1331–1333 (2002) https://doi.org/10.1116/1.1488642
J. Vac. Sci. Technol. B 20, 1334–1338 (2002) https://doi.org/10.1116/1.1488645
J. Vac. Sci. Technol. B 20, 1339–1341 (2002) https://doi.org/10.1116/1.1488644
J. Vac. Sci. Technol. B 20, 1342–1347 (2002) https://doi.org/10.1116/1.1490392
J. Vac. Sci. Technol. B 20, 1348–1355 (2002) https://doi.org/10.1116/1.1490387
J. Vac. Sci. Technol. B 20, 1356–1359 (2002) https://doi.org/10.1116/1.1490385
J. Vac. Sci. Technol. B 20, 1360–1363 (2002) https://doi.org/10.1116/1.1490383
J. Vac. Sci. Technol. B 20, 1364–1367 (2002) https://doi.org/10.1116/1.1490391
J. Vac. Sci. Technol. B 20, 1368–1378 (2002) https://doi.org/10.1116/1.1490389
J. Vac. Sci. Technol. B 20, 1379–1383 (2002) https://doi.org/10.1116/1.1490384
J. Vac. Sci. Technol. B 20, 1384–1387 (2002) https://doi.org/10.1116/1.1490386
J. Vac. Sci. Technol. B 20, 1388–1393 (2002) https://doi.org/10.1116/1.1490390
J. Vac. Sci. Technol. B 20, 1394–1401 (2002) https://doi.org/10.1116/1.1490388
J. Vac. Sci. Technol. B 20, 1402–1405 (2002) https://doi.org/10.1116/1.1491547
J. Vac. Sci. Technol. B 20, 1406–1409 (2002) https://doi.org/10.1116/1.1491550
J. Vac. Sci. Technol. B 20, 1410–1418 (2002) https://doi.org/10.1116/1.1491551
J. Vac. Sci. Technol. B 20, 1419–1426 (2002) https://doi.org/10.1116/1.1491555
J. Vac. Sci. Technol. B 20, 1427–1430 (2002) https://doi.org/10.1116/1.1491552
J. Vac. Sci. Technol. B 20, 1431–1435 (2002) https://doi.org/10.1116/1.1491553
J. Vac. Sci. Technol. B 20, 1436–1443 (2002) https://doi.org/10.1116/1.1491548
J. Vac. Sci. Technol. B 20, 1444–1447 (2002) https://doi.org/10.1116/1.1491549
J. Vac. Sci. Technol. B 20, 1448–1451 (2002) https://doi.org/10.1116/1.1493784
J. Vac. Sci. Technol. B 20, 1452–1456 (2002) https://doi.org/10.1116/1.1494064
J. Vac. Sci. Technol. B 20, 1457–1464 (2002) https://doi.org/10.1116/1.1494065
J. Vac. Sci. Technol. B 20, 1465–1470 (2002) https://doi.org/10.1116/1.1494066
J. Vac. Sci. Technol. B 20, 1471–1475 (2002) https://doi.org/10.1116/1.1494068
J. Vac. Sci. Technol. B 20, 1476–1481 (2002) https://doi.org/10.1116/1.1494067
J. Vac. Sci. Technol. B 20, 1482–1488 (2002) https://doi.org/10.1116/1.1495503
J. Vac. Sci. Technol. B 20, 1489–1492 (2002) https://doi.org/10.1116/1.1495094
J. Vac. Sci. Technol. B 20, 1493–1495 (2002) https://doi.org/10.1116/1.1495004
J. Vac. Sci. Technol. B 20, 1496–1500 (2002) https://doi.org/10.1116/1.1495506
J. Vac. Sci. Technol. B 20, 1501–1507 (2002) https://doi.org/10.1116/1.1495504
J. Vac. Sci. Technol. B 20, 1508–1513 (2002) https://doi.org/10.1116/1.1495505
J. Vac. Sci. Technol. B 20, 1514–1521 (2002) https://doi.org/10.1116/1.1495502
J. Vac. Sci. Technol. B 20, 1522–1526 (2002) https://doi.org/10.1116/1.1495906
J. Vac. Sci. Technol. B 20, 1527–1536 (2002) https://doi.org/10.1116/1.1495874
J. Vac. Sci. Technol. B 20, 1537–1541 (2002) https://doi.org/10.1116/1.1495875
J. Vac. Sci. Technol. B 20, 1542–1547 (2002) https://doi.org/10.1116/1.1495905
J. Vac. Sci. Technol. B 20, 1548–1555 (2002) https://doi.org/10.1116/1.1495904

BRIEF REPORTS AND COMMENTS

J. Vac. Sci. Technol. B 20, 1556–1560 (2002) https://doi.org/10.1116/1.1490393
J. Vac. Sci. Technol. B 20, 1561–1566 (2002) https://doi.org/10.1116/1.1495876
J. Vac. Sci. Technol. B 20, 1567–1569 (2002) https://doi.org/10.1116/1.1495903

RAPID COMMUNICATIONS

J. Vac. Sci. Technol. B 20, 1570–1573 (2002) https://doi.org/10.1116/1.1488643
J. Vac. Sci. Technol. B 20, 1574–1577 (2002) https://doi.org/10.1116/1.1491554

ERRATA

J. Vac. Sci. Technol. B 20, 1578 (2002) https://doi.org/10.1116/1.1497167

PAPERS FROM THE 29TH CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES

MAGNETISM; MAGNETIC-SEMICONDUCTOR HETEROSTRUCTURES AND INTERFACES
J. Vac. Sci. Technol. B 20, 1582–1585 (2002) https://doi.org/10.1116/1.1491991
J. Vac. Sci. Technol. B 20, 1586–1590 (2002) https://doi.org/10.1116/1.1491992
J. Vac. Sci. Technol. B 20, 1591–1599 (2002) https://doi.org/10.1116/1.1491993
J. Vac. Sci. Technol. B 20, 1600–1608 (2002) https://doi.org/10.1116/1.1491994
J. Vac. Sci. Technol. B 20, 1609–1613 (2002) https://doi.org/10.1116/1.1491538

ORGANIC-INORGANIC INTERFACES

J. Vac. Sci. Technol. B 20, 1614–1619 (2002) https://doi.org/10.1116/1.1490381
J. Vac. Sci. Technol. B 20, 1620–1625 (2002) https://doi.org/10.1116/1.1491546

WIDE-BANDGAP SEMICONDUCTORS; HETEROSTRUCTURES AND INTERFACES

J. Vac. Sci. Technol. B 20, 1626–1639 (2002) https://doi.org/10.1116/1.1491540
J. Vac. Sci. Technol. B 20, 1640–1646 (2002) https://doi.org/10.1116/1.1491545
J. Vac. Sci. Technol. B 20, 1647–1655 (2002) https://doi.org/10.1116/1.1491539
J. Vac. Sci. Technol. B 20, 1656–1663 (2002) https://doi.org/10.1116/1.1491544
J. Vac. Sci. Technol. B 20, 1664–1670 (2002) https://doi.org/10.1116/1.1496513

DIAGNOSTICS, SCANNED AND OTHER

J. Vac. Sci. Technol. B 20, 1671–1676 (2002) https://doi.org/10.1116/1.1491536
J. Vac. Sci. Technol. B 20, 1677–1681 (2002) https://doi.org/10.1116/1.1491535
J. Vac. Sci. Technol. B 20, 1682–1689 (2002) https://doi.org/10.1116/1.1496512
J. Vac. Sci. Technol. B 20, 1690–1698 (2002) https://doi.org/10.1116/1.1491987
J. Vac. Sci. Technol. B 20, 1699–1705 (2002) https://doi.org/10.1116/1.1493783

SILICON-DIELECTRIC INTERFACES

J. Vac. Sci. Technol. B 20, 1706–1709 (2002) https://doi.org/10.1116/1.1491543
J. Vac. Sci. Technol. B 20, 1710–1719 (2002) https://doi.org/10.1116/1.1490382
J. Vac. Sci. Technol. B 20, 1720–1725 (2002) https://doi.org/10.1116/1.1491542
J. Vac. Sci. Technol. B 20, 1726–1731 (2002) https://doi.org/10.1116/1.1493785
J. Vac. Sci. Technol. B 20, 1732–1738 (2002) https://doi.org/10.1116/1.1493786
J. Vac. Sci. Technol. B 20, 1739–1747 (2002) https://doi.org/10.1116/1.1493787
J. Vac. Sci. Technol. B 20, 1748–1758 (2002) https://doi.org/10.1116/1.1493788

COMPOUND SEMICONDUCTORS; SURFACES AND INTERFACES

J. Vac. Sci. Technol. B 20, 1759–1765 (2002) https://doi.org/10.1116/1.1491537
J. Vac. Sci. Technol. B 20, 1766–1770 (2002) https://doi.org/10.1116/1.1491541
J. Vac. Sci. Technol. B 20, 1771–1776 (2002) https://doi.org/10.1116/1.1491988
J. Vac. Sci. Technol. B 20, 1777–1780 (2002) https://doi.org/10.1116/1.1491989
J. Vac. Sci. Technol. B 20, 1781–1787 (2002) https://doi.org/10.1116/1.1491990
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