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REGULAR ARTICLES

Theory of nanotip formation

Griff L. Bilbro

J. Vac. Sci. Technol. B 20, 757–761 (2002) https://doi.org/10.1116/1.1467659

Abstract

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Three-dimensional site control of self-organized InAs quantum dots by in situ scanning tunneling probe-assisted nanolithography and molecular beam epitaxy

S. Kohmoto; H. Nakamura; S. Nishikawa; K. Asakawa

J. Vac. Sci. Technol. B 20, 762–765 (2002) https://doi.org/10.1116/1.1467662

Abstract

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Morphological evolution and surface and interface structure of aluminum on polyimide

Xue-Feng Lin; David A. Grove; Lun-Cun Wei; Greg S. Strossman; Glenn Lefever-Button; Jeffrey R. Kingsley

J. Vac. Sci. Technol. B 20, 766–775 (2002) https://doi.org/10.1116/1.1467658

Abstract

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Effect of polishing pretreatment on the fabrication of ordered nanopore arrays on aluminum foils by anodization

M. T. Wu; I. C. Leu; M. H. Hon

J. Vac. Sci. Technol. B 20, 776–782 (2002) https://doi.org/10.1116/1.1467657

Abstract

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Scanning capacitance microscopy measurements using diamond-coated probes

Hidehiko Yabuhara; Mauro Ciappa; Wolfgang Fichtner

J. Vac. Sci. Technol. B 20, 783–786 (2002) https://doi.org/10.1116/1.1467660

Abstract

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Field electron emission device using silicon nanoprotrusions

Kazuaki Sawada; Michiharu Tabe; Yasuhiko Ishikawa; Makoto Ishida

J. Vac. Sci. Technol. B 20, 787–790 (2002) https://doi.org/10.1116/1.1467661

Abstract

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Importance of fluorine surface diffusion for plasma etching of silicon

P. Verdonck; A. Goodyear; R. D. Mansano; P. R. J. Barroy; N. St. J. Braithwaite

J. Vac. Sci. Technol. B 20, 791–796 (2002) https://doi.org/10.1116/1.1469015

Abstract

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Advanced transfer system for spin coating film transfer and hot-pressing in planarization technology

Norio Sato; Katsuyuki Machida; Kazuhisa Kudou; Masaki Yano; Hakaru Kyuragi

J. Vac. Sci. Technol. B 20, 797–801 (2002) https://doi.org/10.1116/1.1469014

Abstract

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Carbon nanotube films grown by laser-assisted chemical vapor deposition

F. Rohmund; R.-E. Morjan; G. Ledoux; F. Huisken; R. Alexandrescu

J. Vac. Sci. Technol. B 20, 802–811 (2002) https://doi.org/10.1116/1.1469013

Abstract

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Quantum transport through one-dimensional aluminum wires

Inder P. Batra; Prasenjit Sen; S. Ciraci

J. Vac. Sci. Technol. B 20, 812–817 (2002) https://doi.org/10.1116/1.1468659

Abstract

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Spatially selective single-grain silicon films induced by hydrogen plasma seeding

Xiang-Zheng Bo; Nan Yao; Sigurd Wagner; J. C. Sturm

J. Vac. Sci. Technol. B 20, 818–821 (2002) https://doi.org/10.1116/1.1469016

Abstract

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Atomic force microscopy using single-wall C nanotube probes

E. S. Snow; P. M. Campbell; J. P. Novak

J. Vac. Sci. Technol. B 20, 822–827 (2002) https://doi.org/10.1116/1.1469017

Abstract

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Characterization of methyl-doped silicon oxide film deposited using Flowfill™ chemical vapor deposition technology

Hongqiang Lu; Hao Cui; Ishwara Bhat; Shyam Murarka; Williams Lanford; Wei-Jen Hsia; Weidan Li

J. Vac. Sci. Technol. B 20, 828–833 (2002) https://doi.org/10.1116/1.1470510

Abstract

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Comparative study on alloy cluster formation in Co-Al and Co-Pt systems

Toyohiko J. Konno; Saeki Yamamuro; Kenji Sumiyama

J. Vac. Sci. Technol. B 20, 834–842 (2002) https://doi.org/10.1116/1.1470518

Abstract

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Selective etching of Al/AlN structures for metallization of surface acoustic wave devices

F. Engelmark; G. F. Iriarte; I. V. Katardjiev

J. Vac. Sci. Technol. B 20, 843–848 (2002) https://doi.org/10.1116/1.1470511

Abstract

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Electron-beam double resist process to enhance bright field pattern resolution

Victor W. C. Chan; Philip C. H. Chan

J. Vac. Sci. Technol. B 20, 849–854 (2002) https://doi.org/10.1116/1.1470517

Abstract

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Simulation and dielectric characterization of reactive dc magnetron cosputtered $({Ta}_{2} O_{5})_{1−x} ({TiO}_{2})_{x}$ thin films

J. Westlinder; Y. Zhang; F. Engelmark; G. Possnert; H.-O. Blom; J. Olsson; S. Berg

J. Vac. Sci. Technol. B 20, 855–861 (2002) https://doi.org/10.1116/1.1470508

Abstract

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Silicon nanowires with sub 10 nm lateral dimensions: From atomic force microscope lithography based fabrication to electrical measurements

B. Legrand; D. Deresmes; D. Stiévenard

J. Vac. Sci. Technol. B 20, 862–870 (2002) https://doi.org/10.1116/1.1470519

Abstract

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Thin-film resistor fabrication for InP technology applications

R. F. Kopf; R. Melendes; D. C. Jacobson; A. Tate; M. A. Melendes; R. R. Reyes; R. A. Hamm; Y. Yang; J. Frackoviak; N. G. Weimann; H. L. Maynard; C. T. Liu

J. Vac. Sci. Technol. B 20, 871–875 (2002) https://doi.org/10.1116/1.1473179

Abstract

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Protection of ${In}_{0.25} {Ga}_{0.75} As/GaAs$ structures during lateral oxidation using an amorphous InGaP layer

G. W. Pickrell; K. L. Chang; J. H. Epple; K. Y. Cheng; K. C. Hsieh

J. Vac. Sci. Technol. B 20, 876–879 (2002) https://doi.org/10.1116/1.1473182

Abstract

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Thermal stability of ${SiO}_{2} / {CoSi}_{2} / polysilicon$ multilayer structures improved by cavity formation

A. Alberti; F. La Via; S. Ravesi

J. Vac. Sci. Technol. B 20, 880–884 (2002) https://doi.org/10.1116/1.1475681

Abstract

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Inverse electronic scattering from shifted projections within the Fresnel-Kirchhoff formalism

A. Mayer

J. Vac. Sci. Technol. B 20, 885–890 (2002) https://doi.org/10.1116/1.1473180

Abstract

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Development of a data-driven dynamic model for a plasma etching reactor

Haiyang Zhang; Michael Nikolaou; Ying Peng

J. Vac. Sci. Technol. B 20, 891–901 (2002) https://doi.org/10.1116/1.1475986

Abstract

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Deep etch of GaP using high-density plasma for light-emitting diode applications

D. S. Wuu; C. R. Chung; Y. H. Liu; R. H. Horng; S. H. Huang

J. Vac. Sci. Technol. B 20, 902–908 (2002) https://doi.org/10.1116/1.1475983

Abstract

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Highly cross-linked polysilane as antireflective coating for deep ultraviolet lithography to improve durability during ${SiO}_{2}$ etching

Yasuhiko Sato; Eishi Shiobara; Yasunobu Onishi; Sawako Yoshikawa; Yoshihiko Nakano; Shuzi Hayase; Yoshitaka Hamada

J. Vac. Sci. Technol. B 20, 909–913 (2002) https://doi.org/10.1116/1.1475987

Abstract

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Ion-graphy implanter with stencil mask

T. Nishihashi; K. Kashimoto; J. Fujiyama; Y. Sakurada; T. Shibata; K. Suguro; K. Sugihara; K. Okumura; T. Gotou; S. Saji; M. Tsunoda

J. Vac. Sci. Technol. B 20, 914–917 (2002) https://doi.org/10.1116/1.1475982

Abstract

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Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal–oxide–semiconductor fabrication

Sam-Dong Kim; In-Seok Hwang; Hyung-Moo Park; Jin-Koo Rhee; Chul-Woo Nam

J. Vac. Sci. Technol. B 20, 918–923 (2002) https://doi.org/10.1116/1.1475984

Abstract

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Influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist

F. A. Houle; W. D. Hinsberg; M. I. Sanchez; J. A. Hoffnagle

J. Vac. Sci. Technol. B 20, 924–931 (2002) https://doi.org/10.1116/1.1475985

Abstract

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Fabrication of micrometer and nanometer scale structures in silica sol-gel films using electron beam writing methods

Nick J. Visovsky; Ljerka Ukrainczyk; Steven B. Dawes

J. Vac. Sci. Technol. B 20, 932–935 (2002) https://doi.org/10.1116/1.1476095

Abstract

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Ion implantation effects on the structure and nanomechanical properties of vapor deposited cubic boron nitride films

Y. Yamada-Takamura; T. Yoshida

J. Vac. Sci. Technol. B 20, 936–939 (2002) https://doi.org/10.1116/1.1475988

Abstract

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Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability

Kun-Cheng Lin; Jia-Min Shieh; Shih-Chieh Chang; Bau-Tong Dai; Chia-Fu Chen; Ming-Shiann Feng

J. Vac. Sci. Technol. B 20, 940–945 (2002) https://doi.org/10.1116/1.1477422

Abstract

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Molecular dynamics simulation of sputter trench-filling morphology in damascene process

Shin-Pon Ju; Cheng-I Weng; Jee-Gong Chang; Chi-Chuan Hwang

J. Vac. Sci. Technol. B 20, 946–955 (2002) https://doi.org/10.1116/1.1477423

Abstract

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Patterning pentacene organic thin film transistors

Ioannis Kymissis; Christos D. Dimitrakopoulos; Sampath Purushothaman

J. Vac. Sci. Technol. B 20, 956–959 (2002) https://doi.org/10.1116/1.1477427

Abstract

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Controlled tuning of periodic morphologies on vicinal $Si(111)$ surfaces

Pierre-David Szkutnik; Dirk Sander; Frédéric Dulot; François Arnaud d’Avitaya; Margrit Hanbücken

J. Vac. Sci. Technol. B 20, 960–963 (2002) https://doi.org/10.1116/1.1477426

Abstract

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Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature

T. K. Ng; S. F. Yoon; S. Z. Wang; W. K. Loke; W. J. Fan

J. Vac. Sci. Technol. B 20, 964–968 (2002) https://doi.org/10.1116/1.1477425

Abstract

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Room temperature magnetism in $GaMnP$ produced by both ion implantation and molecular-beam epitaxy

M. E. Overberg; B. P. Gila; G. T. Thaler; C. R. Abernathy; S. J. Pearton; N. A. Theodoropoulou; K. T. McCarthy; S. B. Arnason; A. F. Hebard; S. N. G. Chu; R. G. Wilson; J. M. Zavada; Y. D. Park

J. Vac. Sci. Technol. B 20, 969–973 (2002) https://doi.org/10.1116/1.1477424

Abstract

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Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

J. A. Van den Berg; D. G. Armour; S. Zhang; S. Whelan; H. Ohno; T.-S. Wang; A. G. Cullis; E. H. J. Collart; R. D. Goldberg; P. Bailey; T. C. Q. Noakes

J. Vac. Sci. Technol. B 20, 974–983 (2002) https://doi.org/10.1116/1.1477420

Abstract

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Specular ion current measurements as a quantitative, real-time probe of GaAs(001) epitaxial growth

K. C. Ruthe; P. M. DeLuca; S. A. Barnett

J. Vac. Sci. Technol. B 20, 984–991 (2002) https://doi.org/10.1116/1.1477421

Abstract

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Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon

Xinming Lu; Lin Shao; Xuemei Wang; Jiarui Liu; Wei-Kan Chu; Joe Bennett; Larry Larson; Peiching Ling

J. Vac. Sci. Technol. B 20, 992–994 (2002) https://doi.org/10.1116/1.1479361

Abstract

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Nanophase films deposited from a high-rate, nanoparticle beam

F. K. Urban, III; A. Hosseini-Tehrani; P. Griffiths; A. Khabari; Y.-W. Kim; I. Petrov

J. Vac. Sci. Technol. B 20, 995–999 (2002) https://doi.org/10.1116/1.1481749

Abstract

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Effects of the polymer residues on via contact resistance after reactive ion etching

Hyoung-Soo Ko; Jae-Woong Nah; Kyung W. Paik; Y. Park

J. Vac. Sci. Technol. B 20, 1000–1007 (2002) https://doi.org/10.1116/1.1479364

Abstract

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Freestanding microheaters in Si with high aspect ratio microstructures

W.-C. Tian; S. W. Pang

J. Vac. Sci. Technol. B 20, 1008–1012 (2002) https://doi.org/10.1116/1.1479363

Abstract

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1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region

Po-Hsun Lei; Ming-Yuan Wu; Meng-Chyi Wu; Chong-Yi Lee; Wen-Jeng Ho; Chia-Chien Lin

J. Vac. Sci. Technol. B 20, 1013–1018 (2002) https://doi.org/10.1116/1.1481750

Abstract

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Etching method for fabricating ultracompact three-dimensional monolithic microwave integrated circuits

Suehiro Sugitani; Kiyomitsu Onodera; Shinji Aoyama; Makoto Hirano; Masami Tokumitsu

J. Vac. Sci. Technol. B 20, 1019–1025 (2002) https://doi.org/10.1116/1.1479362

Abstract

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Charging-damage-free and precise dielectric etching in pulsed $C_{2} F_{4} / {CF}_{3} I$ plasma

H. Ohtake; S. Samukawa

J. Vac. Sci. Technol. B 20, 1026–1030 (2002) https://doi.org/10.1116/1.1479737

Abstract

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Modeling and simulation of atomic layer deposition at the feature scale

Matthias K. Gobbert; Vinay Prasad; Timothy S. Cale

J. Vac. Sci. Technol. B 20, 1031–1043 (2002) https://doi.org/10.1116/1.1481754

Abstract

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Low-energy electron point source microscope as a tool for transport measurements of free-standing nanometer-scale objects: Application to carbon nanotubes

P. Dorozhkin; H. Nejoh; D. Fujita

J. Vac. Sci. Technol. B 20, 1044–1047 (2002) https://doi.org/10.1116/1.1481756

Abstract

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Reduced pressure chemical vapor deposition of ${Si}_{1−x−y} {Ge}_{x} C_{y} / Si$ and ${Si}_{1−y} C_{y} / Si$ heterostructures

V. Loup; J. M. Hartmann; G. Rolland; P. Holliger; F. Laugier; C. Vannuffel; M. N. Séméria

J. Vac. Sci. Technol. B 20, 1048–1054 (2002) https://doi.org/10.1116/1.1481755

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Etching of polysilicon in inductively coupled ${Cl}_{2}$ and HBr discharges. I. Experimental characterization of polysilicon profiles

Arpan P. Mahorowala; Herbert H. Sawin; Richard Jones; Andrew H. Labun

J. Vac. Sci. Technol. B 20, 1055–1063 (2002) https://doi.org/10.1116/1.1481866

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Etching of polysilicon in inductively coupled ${Cl}_{2}$ and HBr discharges. II. Simulation of profile evolution using cellular representation of feature composition and Monte Carlo computation of flux and surface kinetics

Arpan P. Mahorowala; Herbert H. Sawin

J. Vac. Sci. Technol. B 20, 1064–1076 (2002) https://doi.org/10.1116/1.1481867

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Etching of polysilicon in inductively coupled ${Cl}_{2}$ and HBr discharges. III. Photoresist mask faceting, sidewall deposition, and microtrenching

Arpan P. Mahorowala; Herbert H. Sawin

J. Vac. Sci. Technol. B 20, 1077–1083 (2002) https://doi.org/10.1116/1.1481868

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Etching of polysilicon in inductively coupled ${Cl}_{2}$ and HBr discharges. IV. Calculation of feature charging in profile evolution

Arpan P. Mahorowala; Herbert H. Sawin

J. Vac. Sci. Technol. B 20, 1084–1095 (2002) https://doi.org/10.1116/1.1481869

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Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors

Kuo-Hui Yu; Kun-Wei Lin; Kuan-Po Lin; Chih-Hung Yen; Ckih-Kai Wang; Wen-Chau Liu

J. Vac. Sci. Technol. B 20, 1096–1101 (2002) https://doi.org/10.1116/1.1481862

Abstract

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Growth and evolution of ZnCdSe quantum dots

C. X. Shan; X. W. Fan; J. Y. Zhang; Z. Z. Zhang; B. S. Li; Y. M. Lu; Y. C. Liu; D. Z. Shen; X. G. Kong; X. H. Wang

J. Vac. Sci. Technol. B 20, 1102–1106 (2002) https://doi.org/10.1116/1.1481870

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Selective wet etching of AlGaAs in ${HF/CrO}_{3}$ solutions: Application to vertical taper structures in integrated optoelectronic devices

Hui Huang; Yongqing Huang; Xiaomin Ren

J. Vac. Sci. Technol. B 20, 1107–1110 (2002) https://doi.org/10.1116/1.1481861

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Effects of the underlayer substrates on copper chemical vapor deposition

Cheng-Li Lin; Peng-Sen Chen; Mao-Chieh Chen

J. Vac. Sci. Technol. B 20, 1111–1117 (2002) https://doi.org/10.1116/1.1481863

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Sub-50 nm nanopatterning of metallic layers by green pulsed laser combined with atomic force microscopy

S. M. Huang; M. H. Hong; B. S. Luk’yanchuk; Y. F. Lu; W. D. Song; T. C. Chong

J. Vac. Sci. Technol. B 20, 1118–1125 (2002) https://doi.org/10.1116/1.1481865

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Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications

R. S. Johnson; J. G. Hong; C. Hinkle; G. Lucovsky

J. Vac. Sci. Technol. B 20, 1126–1131 (2002) https://doi.org/10.1116/1.1481872

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BRIEF REPORTS AND COMMENTS

Feasibility of thin film microfabricated hydrogen ion sources

Robert H. Reuss; Babu R. Chalamala

J. Vac. Sci. Technol. B 20, 1132–1134 (2002) https://doi.org/10.1116/1.1473181

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Evidence of storing and erasing of electrons in a nanocrystalline-Si based memory device at 77 K

Souri Banerjee; Shaoyun Huang; Takayuki Yamanaka; Shunri Oda

J. Vac. Sci. Technol. B 20, 1135–1138 (2002) https://doi.org/10.1116/1.1481871

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RAPID COMMUNICATIONS

Investigation of polymethylmethacrylate resist residues using photoelectron microscopy

I. Maximov; A. A. Zakharov; T. Holmqvist; L. Montelius; I. Lindau

J. Vac. Sci. Technol. B 20, 1139–1142 (2002) https://doi.org/10.1116/1.1470509

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Ultrathin nitrided-nanolaminate $({Al}_{2} O_{3} / {ZrO}_{2} / {Al}_{2} O_{3})$ for metal–oxide–semiconductor gate dielectric applications

Sanghun Jeon; Hyundoek Yang; Hyo Sik Chang; Dae-Gyu Park; Hyunsang Hwang

J. Vac. Sci. Technol. B 20, 1143–1145 (2002) https://doi.org/10.1116/1.1481864

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PAPERS FROM THE 20TH NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY

DILUTE NITRIDES

Optical characterization of strained InGaAsN/GaAs multiple quantum wells

J. B. Héroux; X. Yang; W. I. Wang

J. Vac. Sci. Technol. B 20, 1154–1157 (2002) https://doi.org/10.1116/1.1481752

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Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency

A. R. Kovsh; J. S. Wang; L. Wei; R. S. Shiao; J. Y. Chi; B. V. Volovik; A. F. Tsatsul’nikov; V. M. Ustinov

J. Vac. Sci. Technol. B 20, 1158–1162 (2002) https://doi.org/10.1116/1.1473176

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Growth of GaInNAs quaternaries using a digital alloy technique

Y. G. Hong; A. Yu. Egorov; C. W. Tu

J. Vac. Sci. Technol. B 20, 1163–1166 (2002) https://doi.org/10.1116/1.1473175

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Growth and characterization of ${Ga}_{0.8} {In}_{0.2} (N)As$ quantum wells with ${GaN}_{x} {As}_{1−x} (x⩽0.05)$ barriers by plasma-assisted molecular beam epitaxy

Sridhar Govindaraju; Archie L. Holmes, Jr.

J. Vac. Sci. Technol. B 20, 1167–1169 (2002) https://doi.org/10.1116/1.1477202

Abstract

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Substrate preparation and low-temperature boron doped silicon growth on wafer-scale charge-coupled devices by molecular beam epitaxy

S. D. Calawa; B. E. Burke; P. M. Nitishin; A. H. Loomis; J. A. Gregory; T. A. Lind

J. Vac. Sci. Technol. B 20, 1170–1173 (2002) https://doi.org/10.1116/1.1477200

Abstract

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ANTIMONIDES

Structural and transport characterization of AlSb/InAs quantum-well structures grown by molecular-beam epitaxy with two growth interruptions

J. Sigmund; M. Saglam; H. L. Hartnagel; V. N. Zverev; O. E. Raichev; P. Debray; G. Miehe; H. Fuess

J. Vac. Sci. Technol. B 20, 1174–1177 (2002) https://doi.org/10.1116/1.1468658

Abstract

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Atomistics of III–V semiconductor surfaces: Role of group V pressure

Frank Grosse; William Barvosa-Carter; Jenna J. Zinck; Mark F. Gyure

J. Vac. Sci. Technol. B 20, 1178–1181 (2002) https://doi.org/10.1116/1.1461371

Abstract

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Electrical spin injection into ${In}_{0.4} {Ga}_{0.6} As/GaAs$ quantum dots using (Ga,Mn)As

S. Ghosh; P. Bhattacharya

J. Vac. Sci. Technol. B 20, 1182–1184 (2002) https://doi.org/10.1116/1.1456521

Abstract

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NANOSTRUCTURES

Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier

A. D. Stiff-Roberts; S. Krishna; P. Bhattacharya; S. Kennerly

J. Vac. Sci. Technol. B 20, 1185–1187 (2002) https://doi.org/10.1116/1.1461370

Abstract

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Tailoring mid- and long-wavelength dual response of InAs quantum-dot infrared photodetectors using ${In}_{x} {Ga}_{1−x} As$ capping layers

Eui-Tae Kim; Zhonghui Chen; Max Ho; Anupam Madhukar

J. Vac. Sci. Technol. B 20, 1188–1191 (2002) https://doi.org/10.1116/1.1463695

Abstract

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Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy

Takeyoshi Sugaya; Jonathan P. Bird; David K. Ferry; Kee Youn Jang; Mutsuo Ogura; Yoshinobu Sugiyama

J. Vac. Sci. Technol. B 20, 1192–1195 (2002) https://doi.org/10.1116/1.1456519

Abstract

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METAMORPHIC AND COMPLIANT GROWTH

High quality GaAs grown on Si-on-insulator compliant substrates

C. W. Pei; J. B. Héroux; J. Sweet; W. I. Wang; J. Chen; M. F. Chang

J. Vac. Sci. Technol. B 20, 1196–1199 (2002) https://doi.org/10.1116/1.1481753

Abstract

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Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

O. Baklenov; D. Lubyshev; Y. Wu; X.-M. Fang; J. M. Fastenau; L. Leung; F. J. Towner; A. B. Cornfeld; W. K. Liu

J. Vac. Sci. Technol. B 20, 1200–1204 (2002) https://doi.org/10.1116/1.1481751

Abstract

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Interfacial roughness and carrier scattering due to misfit dislocations in ${In}_{0.52} {Al}_{0.48} {As/In}_{0.75} {Ga}_{0.25} As/InP$ structures

M. Naidenkova; M. S. Goorsky; R. Sandhu; R. Hsing; M. Wojtowicz; T. P. Chin; T. R. Block; D. C. Streit

J. Vac. Sci. Technol. B 20, 1205–1208 (2002) https://doi.org/10.1116/1.1477201

Abstract

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High-frequency metamorphic $p-i-n$ photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications

W. E. Hoke; R. E. Leoni; C. S. Whelan; P. F. Marsh; J. H. Jang; I. Adesida; A. M. Joshi; X. Wang

J. Vac. Sci. Technol. B 20, 1209–1212 (2002) https://doi.org/10.1116/1.1470516

Abstract

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InAs-based bipolar transistors grown by molecular beam epitaxy

K. L. Averett; S. Maimon; X. Wu; M. W. Koch; G. W. Wicks

J. Vac. Sci. Technol. B 20, 1213–1216 (2002) https://doi.org/10.1116/1.1459461

Abstract

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WIDEGAP NITRIDES

Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy

H. M. Ng; A. Y. Cho

J. Vac. Sci. Technol. B 20, 1217–1220 (2002) https://doi.org/10.1116/1.1463723

Abstract

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Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy

Gon Namkoong; W. Alan Doolittle; April S. Brown; Maria Losurdo; Pio Capezzuto; Giovanni Bruno

J. Vac. Sci. Technol. B 20, 1221–1228 (2002) https://doi.org/10.1116/1.1470514

Abstract

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GROWTH AND CHARACTERIZATION

High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors

A. Bhattacharyya; Sandeep Iyer; E. Iliopoulos; A. V. Sampath; J. Cabalu; T. D. Moustakas; I. Friel

J. Vac. Sci. Technol. B 20, 1229–1233 (2002) https://doi.org/10.1116/1.1482070

Abstract

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Surface and interface characterization of GaN/AlGaN high electron mobility transistor structures by x-ray and atomic force microscopy

A. Torabi; P. Ericson; E. J. Yarranton; W. E. Hoke

J. Vac. Sci. Technol. B 20, 1234–1237 (2002) https://doi.org/10.1116/1.1481874

Abstract

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Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system

V. H. Méndez-Garcı́a; L. Zamora; A. Lastras-Martinez; N. Saucedo; R. Peña; A. Guillén; Z. Rivera; M. Meléndez; M. López; F. Hernández; J. Huerta

J. Vac. Sci. Technol. B 20, 1238–1242 (2002) https://doi.org/10.1116/1.1459460

Abstract

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Intraband and interband photocurrent spectroscopy and induced dipole moments of InAs/GaAs(001) quantum dots in $n–i–n$ photodetector structures

Zhonghui Chen; Eui-Tae Kim; Anupam Madhukar

J. Vac. Sci. Technol. B 20, 1243–1246 (2002) https://doi.org/10.1116/1.1463721

Abstract

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Dislocation structure and relaxation kinetics in InGaAs/GaAs heteroepitaxy

C. Lynch; E. Chason; R. Beresford; E. B. Chen; D. C. Paine

J. Vac. Sci. Technol. B 20, 1247–1250 (2002) https://doi.org/10.1116/1.1463722

Abstract

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Kinetics of the heteroepitaxial growth of Ge on Si(001)

V. Yam; Vinh Le Thanh; P. Boucaud; D. Débarre; D. Bouchier

J. Vac. Sci. Technol. B 20, 1251–1258 (2002) https://doi.org/10.1116/1.1473177

Abstract

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Vertical ordering in multilayers of self-assembled Ge/Si(001) quantum dots

Vinh Le Thanh; V. Yam; Lam H. Nguyen; Y. Zheng; P. Boucaud; D. Débarre; D. Bouchier

J. Vac. Sci. Technol. B 20, 1259–1265 (2002) https://doi.org/10.1116/1.1456522

Abstract

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Growth and characterization of ferromagnetic ${Ga}_{1−x} {Mn}_{x} As$ epilayers on (001) ZnSe

S. H. Chun; K. C. Ku; S. J. Potashnik; P. Schiffer; N. Samarth

J. Vac. Sci. Technol. B 20, 1266–1269 (2002) https://doi.org/10.1116/1.1456523

Abstract

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High characteristic temperature ${(T}_{} =243$ K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy

Yasuhide Ohno; Hironori Kanamori; Satoshi Shimomura; Satoshi Hiyamizu

J. Vac. Sci. Technol. B 20, 1270–1273 (2002) https://doi.org/10.1116/1.1456520

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NOVEL MATERIALS/II-VI

Single-crystal GaN/Gd₂O₃/GaN heterostructure

M. Hong; J. Kwo; S. N. G. Chu; J. P. Mannaerts; A. R. Kortan; H. M. Ng; A. Y. Cho; K. A. Anselm; C. M. Lee; J. I. Chyi

J. Vac. Sci. Technol. B 20, 1274–1277 (2002) https://doi.org/10.1116/1.1473178

Abstract

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Molecular-beam epitaxy growth and properties of ${Be}_{x} {Zn}_{1−x} Te$ alloys for optoelectronic devices

O. Maksimov; Martin Muñoz; M. C. Tamargo; J. Lau; G. F. Neumark

J. Vac. Sci. Technol. B 20, 1278–1281 (2002) https://doi.org/10.1116/1.1470515

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Issues

REGULAR ARTICLES

BRIEF REPORTS AND COMMENTS

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PAPERS FROM THE 20TH NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY

DILUTE NITRIDES

ANTIMONIDES

NANOSTRUCTURES

METAMORPHIC AND COMPLIANT GROWTH

WIDEGAP NITRIDES

GROWTH AND CHARACTERIZATION

NOVEL MATERIALS/II-VI

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