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March 2002

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

ARTICLES

Nucleation and film growth during copper chemical vapor deposition using the precursor Cu(TMVS)(hfac)

Daewon Yang; Jongwon Hong; David F. Richards; Timothy S. Cale

J. Vac. Sci. Technol. B 20, 495–506 (2002) https://doi.org/10.1116/1.1450590

Abstract

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Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using ${Cs}^{+},$ $O_{2}^{+},$ and ${CsC}_{6}^{-}$ primary ion beams

R. Loesing; G. M. Guryanov; M. S. Phillips; D. P. Griffis

J. Vac. Sci. Technol. B 20, 507–511 (2002) https://doi.org/10.1116/1.1450588

Abstract

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Band offsets of ${Al}_{x} {Ga}_{1−x} SbAs/InGaAs$ heterojunctions

W. Z. Cai; D. L. Miller

J. Vac. Sci. Technol. B 20, 512–522 (2002) https://doi.org/10.1116/1.1450591

Abstract

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Coalescence inhibition in nanosized titania films and related effects on chemoresistive properties towards ethanol

M. Ferroni; V. Guidi; G. Martinelli; G. Roncarati; E. Comini; G. Sberveglieri; A. Vomiero; G. Della Mea

J. Vac. Sci. Technol. B 20, 523–530 (2002) https://doi.org/10.1116/1.1450594

Abstract

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Recent advances in resists for 157 nm microlithography

Brian C. Trinque; Takashi Chiba; Raymond J. Hung; Charles R. Chambers; Matthew J. Pinnow; Brian P. Osborn; Hoang V. Tran; Jennifer Wunderlich; Yu-Tsai Hsieh; Brian H. Thomas; Gregory Shafer; Darryl D. DesMarteau; Will Conley; C. Grant Willson

J. Vac. Sci. Technol. B 20, 531–536 (2002) https://doi.org/10.1116/1.1450589

Abstract

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Advancements to the critical ionization dissolution model

Sean D. Burns; Gerard M. Schmid; Pavlos C. Tsiartas; C. Grant Willson; Lewis Flanagin

J. Vac. Sci. Technol. B 20, 537–543 (2002) https://doi.org/10.1116/1.1450593

Abstract

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Influence of the cap layer on the Gibbs free energy above a layer of buried InGaAs islands

B. Jogai

J. Vac. Sci. Technol. B 20, 544–547 (2002) https://doi.org/10.1116/1.1450592

Abstract

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Investigation of temperature coefficient of resistance and crystallization of semiconducting YBaCuO thin films using pulsed laser annealing

A. Yildiz; Z. Çelik-Butler; D. P. Butler; Choong-Un Kim

J. Vac. Sci. Technol. B 20, 548–553 (2002) https://doi.org/10.1116/1.1451302

Abstract

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Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H–SiC

S. Tumakha; L. J. Brillson; G. H. Jessen; R. S. Okojie; D. Lukco; M. Zhang; P. Pirouz

J. Vac. Sci. Technol. B 20, 554–560 (2002) https://doi.org/10.1116/1.1451303

Abstract

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Gap-filling capability and adhesion strength of the electroless-plated copper for submicron interconnect metallization

Jian-Hong Lin; Wei-Jen Hsieh; Jyh-Wei Hsu; Xein-Wien Liu; Uei-Shin Chen; Han C. Shih

J. Vac. Sci. Technol. B 20, 561–565 (2002) https://doi.org/10.1116/1.1453456

Abstract

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Photocapacitance of deep levels in GaP crystals surface treated by reactive ion etching

Hideo Hashimoto; Takao Saito; Ken Suto; Jun-ichi Nishizawa

J. Vac. Sci. Technol. B 20, 566–569 (2002) https://doi.org/10.1116/1.1454129

Abstract

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Use of reflective and amorphous materials for dark field stepper alignment on silicon carbide substrates

David P. Mancini; Douglas J. Resnick; Harland Tompkins; Karen E. Moore

J. Vac. Sci. Technol. B 20, 570–574 (2002) https://doi.org/10.1116/1.1454130

Abstract

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pH-mediated frictional forces at tungsten surfaces in aqueous environments

Min Soo Lim; Scott S. Perry; Heather C. Galloway; Deborah C. Koeck

J. Vac. Sci. Technol. B 20, 575–579 (2002) https://doi.org/10.1116/1.1454131

Abstract

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Epitaxially overgrown, stable W–GaAs Schottky contacts with sizes down to 50 nm

L.-E. Wernersson; K. Georgsson; A. Gustafsson; A. Löfgren; L. Montelius; N. Nilsson; H. Pettersson; W. Seifert; L. Samuelson; J.-O. Malm

J. Vac. Sci. Technol. B 20, 580–589 (2002) https://doi.org/10.1116/1.1454128

Abstract

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Characterization of platinum films deposited by focused ion beam-assisted chemical vapor deposition

K. A. Telari; B. R. Rogers; H. Fang; L. Shen; R. A. Weller; D. N. Braski

J. Vac. Sci. Technol. B 20, 590–595 (2002) https://doi.org/10.1116/1.1458958

Abstract

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High-resolution in situ electron beam patterning using $Ti ({OC}_{3} H_{7})_{4}$ as a negative-type resist

William J. Mitchell; Evelyn L. Hu

J. Vac. Sci. Technol. B 20, 596–603 (2002) https://doi.org/10.1116/1.1458954

Abstract

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Study of the ${SiO}_{2} /Si$ interface using spectroscopic ellipsometry and x-ray reflectometry

Hitoshi Itoh; Yuichirou Mitani; Hideki Satake

J. Vac. Sci. Technol. B 20, 604–607 (2002) https://doi.org/10.1116/1.1458957

Abstract

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Electrochemical behavior of copper chemical mechanical polishing in ${KIO}_{3}$ slurry

Jyh-Wei Hsu; Shao-Yu Chiu; Ming-Shih Tsai; Bau-Tong Dai; Ming-Shiann Feng; Han-C. Shih

J. Vac. Sci. Technol. B 20, 608–612 (2002) https://doi.org/10.1116/1.1458956

Abstract

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Optimum $B^{+}$ implantation conditions for the edge termination of the $Au /n- Si$ Schottky diodes

C. S. Choi; W. Y. Choi; M. H. Joo; J. H. Song; S. Im

J. Vac. Sci. Technol. B 20, 613–617 (2002) https://doi.org/10.1116/1.1458953

Abstract

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Nanofabrication of photonic crystal membrane lasers

J. R. Cao; Po-Tsung Lee; Sang-Jun Choi; Roshanak Shafiiha; Seung-June Choi; John D. O’Brien; P. Daniel Dapkus

J. Vac. Sci. Technol. B 20, 618–621 (2002) https://doi.org/10.1116/1.1458951

Abstract

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Atomistic simulations of deep submicron interconnect metallization

Y. G. Yang; X. W. Zhou; R. A. Johnson; H. N. G. Wadley

J. Vac. Sci. Technol. B 20, 622–630 (2002) https://doi.org/10.1116/1.1458952

Abstract

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Ge-rich ${Si}_{1−x} {Ge}_{x}$ nanocrystal formation by the oxidation of an as-deposited thin amorphous ${Si}_{0.7} {Ge}_{0.3}$ layer

Tae-Sik Yoon; Ki-Bum Kim

J. Vac. Sci. Technol. B 20, 631–634 (2002) https://doi.org/10.1116/1.1458955

Abstract

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Effect of de-ionized water parameters rinse on postmetal etch residue removal using semiaqueous cleaning chemistries

Robert Small; Simon Kirk; Mihaela Cernat

J. Vac. Sci. Technol. B 20, 635–639 (2002) https://doi.org/10.1116/1.1463070

Abstract

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Nondestructive, in-line characterization of device performance parameters of shallow junction processes

G. Jonathan Kluth; William G. En; P. Borden; L. Bechtler; R. Nijmeijer

J. Vac. Sci. Technol. B 20, 640–643 (2002) https://doi.org/10.1116/1.1463071

Abstract

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Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing

S. Whelan; V. Privitera; M. Italia; G. Mannino; C. Bongiorno; C. Spinella; G. Fortunato; L. Mariucci; M. Stanizzi; A. Mittiga

J. Vac. Sci. Technol. B 20, 644–649 (2002) https://doi.org/10.1116/1.1459725

Abstract

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Towards the understanding of mechanical properties of super- and ultrahard nanocomposites

Stan Veprek; Ali S. Argon

J. Vac. Sci. Technol. B 20, 650–664 (2002) https://doi.org/10.1116/1.1459722

Abstract

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Fabrication of nanocontacts for molecular devices using nanoimprint lithography

Michael Austin; Stephen Y. Chou

J. Vac. Sci. Technol. B 20, 665–667 (2002) https://doi.org/10.1116/1.1463068

Abstract

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Height control of InAs/GaAs quantum dots by combining layer-by-layer in situ etching and molecular beam epitaxy

T. Yang; T. Ishikawa; S. Kohmoto; Y. Nakamura; H. Nakamura; K. Asakawa

J. Vac. Sci. Technol. B 20, 668–672 (2002) https://doi.org/10.1116/1.1459727

Abstract

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Chiral pattern formation: Combined transmission electron microscopy and atomic force microscopy study of tetracyanoquinodimethane thin film grown by vacuum evaporation

J. C. Li; W. M. Liu; Z. Q. Xue

J. Vac. Sci. Technol. B 20, 673–677 (2002) https://doi.org/10.1116/1.1459723

Abstract

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Atomic force microscopy study of the growth and annealing of Ge islands on Si(100)

Bing Liu; Cindy L. Berrie; Takeshi Kitajima; John Bright; Stephen R. Leone

J. Vac. Sci. Technol. B 20, 678–684 (2002) https://doi.org/10.1116/1.1459724

Abstract

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Carrier concentrations and deep trap concentrations in high temperature GaAs

N. C. Halder; V. Krishnan; D. Parshall; D. G. Totzke

J. Vac. Sci. Technol. B 20, 685–689 (2002) https://doi.org/10.1116/1.1459721

Abstract

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Relationship of ${CF}_{2}$ concentration to deposition rates in the pyrolytic chemical vapor deposition process

Brett A. Cruden; Karen K. Gleason; Herbert H. Sawin

J. Vac. Sci. Technol. B 20, 690–695 (2002) https://doi.org/10.1116/1.1459726

Abstract

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Radiation-induced protective carbon coating for extreme ultraviolet optics

L. E. Klebanoff; W. M. Clift; M. E. Malinowski; C. Steinhaus; P. Grunow; S. Bajt

J. Vac. Sci. Technol. B 20, 696–703 (2002) https://doi.org/10.1116/1.1463726

Abstract

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Combinatorial methodologies offer potential for rapid research of photoresist materials and formulations

Joseph L. Lenhart; Ronald L. Jones; Eric K. Lin; Christopher L. Soles; Wen-li Wu; Dario L. Goldfarb; Marie Angelopoulos

J. Vac. Sci. Technol. B 20, 704–709 (2002) https://doi.org/10.1116/1.1463069

Abstract

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Proximity exposure effect analysis using the phenomenon of resist debris formation in electron beam lithography

P. R. Deshmukh

J. Vac. Sci. Technol. B 20, 710–716 (2002) https://doi.org/10.1116/1.1463725

Abstract

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Stress-induced failure of ${Si}_{3} N_{4}$ metal-insulator-metal capacitors fabricated by plasma enhanced chemical vapor deposition

Dongwoo Suh; Jin-Yeong Kang

J. Vac. Sci. Technol. B 20, 717–720 (2002) https://doi.org/10.1116/1.1463724

Abstract

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Effect of thermal diffusion on a membrane-mask-distortion correction and compensation method

Ken-ichi Murooka; Michael H. Lim; Henry I. Smith

J. Vac. Sci. Technol. B 20, 721–724 (2002) https://doi.org/10.1116/1.1463729

Abstract

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Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back

Gianni Taraschi; Thomas A. Langdo; Matthew T. Currie; Eugene A. Fitzgerald; Dimitri A. Antoniadis

J. Vac. Sci. Technol. B 20, 725–727 (2002) https://doi.org/10.1116/1.1463727

Abstract

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Stability of irradiation-induced point defects on walls of carbon nanotubes

A. V. Krasheninnikov; K. Nordlund

J. Vac. Sci. Technol. B 20, 728–733 (2002) https://doi.org/10.1116/1.1463728

Abstract

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Improving resist resolution and sensitivity via electric-field enhanced postexposure baking

Mosong Cheng; Lei Yuan; Ebo Croffie; Andrew Neureuther

J. Vac. Sci. Technol. B 20, 734–740 (2002) https://doi.org/10.1116/1.1464835

Abstract

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Detailed study of scanning capacitance microscopy on cross-sectional and beveled junctions

N. Duhayon; T. Clarysse; P. Eyben; W. Vandervorst; L. Hellemans

J. Vac. Sci. Technol. B 20, 741–746 (2002) https://doi.org/10.1116/1.1464834

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Role of surface steps in the arrangement of silicon nano-dots on a vicinal Si(111) surface: Scanning tunneling microscopy investigation

Jeong Sook Ha; Kang-Ho Park; Young-Jo Ko; Kyungwan Park

J. Vac. Sci. Technol. B 20, 747–751 (2002) https://doi.org/10.1116/1.1464833

Abstract

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Low temperature wafer bonding by spin on glass

H. C. Lin; K. L. Chang; G. W. Pickrell; K. C. Hsieh; K. Y. Cheng

J. Vac. Sci. Technol. B 20, 752–754 (2002) https://doi.org/10.1116/1.1464832

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