Skip Nav Destination

Issues

Select Year

Issue

January 2002

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

REGULAR ARTICLES

Approach for a self-assembled thin film edge field emitter

J. T. H. Tsai; K. B. K. Teo; W. I. Milne

J. Vac. Sci. Technol. B 20, 1–4 (2002) https://doi.org/10.1116/1.1426368

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Low-voltage electron emission from mineral films

J. Rech; O. Grauby; R. Morin

J. Vac. Sci. Technol. B 20, 5–9 (2002) https://doi.org/10.1116/1.1426366

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Barrier height enhancement in the $Au /n- GaAs$ Schottky diodes with anodization process

M. Bı̇ber; C. Temı̇rcı̇; A. Türüt

J. Vac. Sci. Technol. B 20, 10–13 (2002) https://doi.org/10.1116/1.1426369

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Characterization of annealing effects of low temperature chemical vapor deposition oxide films as application of 4H-SiC metal–oxide–semiconductor devices

Won-ju Cho; Young-cheol Kim

J. Vac. Sci. Technol. B 20, 14–18 (2002) https://doi.org/10.1116/1.1426365

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Control of field emission current of individual sites by a local resistor

J. B. Cui; J. Robertson

J. Vac. Sci. Technol. B 20, 19–24 (2002) https://doi.org/10.1116/1.1426367

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electron optics using multipole lenses for a low energy electron beam direct writing system

Yuichiro Yamazaki; Osamu Nagano; Susumu Hashimoto; Atsushi Ando; Kazuyoshi Sugihara; Motosuke Miyoshi; Katsuya Okumura

J. Vac. Sci. Technol. B 20, 25–30 (2002) https://doi.org/10.1116/1.1426371

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Power spectral densities: A multiple technique study of different Si wafer surfaces

Egon Marx; Igor J. Malik; Yale E. Strausser; Thomas Bristow; Noel Poduje; John C. Stover

J. Vac. Sci. Technol. B 20, 31–41 (2002) https://doi.org/10.1116/1.1428267

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Fabrication of c-axis oriented ZnO/AlN thin films prepared by radio frequency reactive sputtering and development of ZnO/AlN layered structure surface acoustic wave devices

Yoon-Joong Yong; Youn-Seon Kang; Paul S. Lee; Jai-Young Lee

J. Vac. Sci. Technol. B 20, 42–46 (2002) https://doi.org/10.1116/1.1428279

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Inductively coupled plasma etching of InP using ${CH}_{4} / H_{2}$ and ${CH}_{4} / H_{2} / N_{2}$

Hsin-Yi Chen; Harry E. Ruda

J. Vac. Sci. Technol. B 20, 47–52 (2002) https://doi.org/10.1116/1.1428277

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Double-gated Spindt emitters with stacked focusing electrode

Leonard Dvorson; Akintunde I. Akinwande

J. Vac. Sci. Technol. B 20, 53–59 (2002) https://doi.org/10.1116/1.1428278

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Characterization of self-assembled alkanethiol monolayers using a low-current scanning tunneling microscope

D. W. Wang; F. Tian; J. G. Lu

J. Vac. Sci. Technol. B 20, 60–64 (2002) https://doi.org/10.1116/1.1428266

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

I–V characteristics of thin-film gated photocathodes for electron-beam lithography

Z. Pei; C. N. Berglund

J. Vac. Sci. Technol. B 20, 65–70 (2002) https://doi.org/10.1116/1.1428271

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Stencil reticle cleaning using an Ar aerosol cleaning technique

Masashi Okada; Shintaro Kawata; Yuzuru Sonoda

J. Vac. Sci. Technol. B 20, 71–75 (2002) https://doi.org/10.1116/1.1428270

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Potential distribution and field intensity for a hyperboloidal probe in a uniform field

A. Passian; A. Wig; F. Meriaudeau; T. L. Ferrell

J. Vac. Sci. Technol. B 20, 76–80 (2002) https://doi.org/10.1116/1.1428268

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Practical approach for modeling extreme ultraviolet lithography mask defects

E. M. Gullikson; C. Cerjan; D. G. Stearns; P. B. Mirkarimi; D. W. Sweeney

J. Vac. Sci. Technol. B 20, 81–86 (2002) https://doi.org/10.1116/1.1428269

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Ion beam proximity lithography on spherical substrates with continuously scanned, self-complementary masks

Paul Ruchhoeft; J. C. Wolfe; Robert Bass

J. Vac. Sci. Technol. B 20, 87–89 (2002) https://doi.org/10.1116/1.1428273

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Improvement in partitioning method for electron beam lithography simulation

S. Aya; K. Kise; K. Marumoto

J. Vac. Sci. Technol. B 20, 90–94 (2002) https://doi.org/10.1116/1.1428272

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Nondestructive via in-hole profile characterization using atomic force microscopy metrology

Abbas Ali; Vladimir Ukraintsev; Hasan Sabri; Ming Yang

J. Vac. Sci. Technol. B 20, 95–99 (2002) https://doi.org/10.1116/1.1428280

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Simulations of field emission from a semiconducting (10,0) carbon nanotube

A. Mayer; N. M. Miskovsky; P. H. Cutler

J. Vac. Sci. Technol. B 20, 100–104 (2002) https://doi.org/10.1116/1.1428275

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Investigation of macroscopic uniformity during ${CH}_{4} / H_{2}$ reactive ion etching of InP and its improvement by use of a guard ring

K. Janiak; U. Niggebrügge

J. Vac. Sci. Technol. B 20, 105–108 (2002) https://doi.org/10.1116/1.1428276

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Properties of porous HSQ-based films capped by plasma enhanced chemical vapor deposition dielectric layers

F. Iacopi; M. R. Baklanov; E. Sleeckx; T. Conard; H. Bender; H. Meynen; K. Maex

J. Vac. Sci. Technol. B 20, 109–115 (2002) https://doi.org/10.1116/1.1428274

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Characterization of plasma-enhanced chemical vapor deposition carbon nanotubes by Auger electron spectroscopy

K. B. K. Teo; M. Chhowalla; G. A. J. Amaratunga; W. I. Milne; G. Pirio; P. Legagneux; F. Wyczisk; J. Olivier; D. Pribat

J. Vac. Sci. Technol. B 20, 116–121 (2002) https://doi.org/10.1116/1.1428281

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Field electron emission from carbon nanotubes grown by plasma-enhanced chemical vapor deposition

M. Tanemura; V. Filip; K. Iwata; Y. Fujimoto; F. Okuyama; D. Nicolaescu; H. Sugie

J. Vac. Sci. Technol. B 20, 122–127 (2002) https://doi.org/10.1116/1.1430239

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Time variation of the work function of field emitter tip surface and the development of adsorption of residual gas molecules studied by sawtoothlike emission current method

Youiti Yamamoto; Sigemaro Nagakura; Masashi Iwatsuki

J. Vac. Sci. Technol. B 20, 128–137 (2002) https://doi.org/10.1116/1.1430238

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Study on beam size correction free from Coulomb interaction

H. Takenaka; M. Sasago

J. Vac. Sci. Technol. B 20, 138–144 (2002) https://doi.org/10.1116/1.1430245

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Deuterium and fluorine radical reaction kinetics on photoresist

Frank Greer; J. W. Coburn; David B. Graves

J. Vac. Sci. Technol. B 20, 145–153 (2002) https://doi.org/10.1116/1.1430242

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching

Kitt Wai Kok; Won Jong Yoo; K. Sooriakumar

J. Vac. Sci. Technol. B 20, 154–158 (2002) https://doi.org/10.1116/1.1431961

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Spectra characterization of silicon carbonitride thin films by reactive radio frequency sputtering

Xiaofeng Peng; Lixin Song; Jun Le; Xingfang Hu

J. Vac. Sci. Technol. B 20, 159–163 (2002) https://doi.org/10.1116/1.1431952

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Calibration and validation of projection lithography focusing by fluorescence detection of latent photoacid images in chemically amplified resist

G. D. Feke; R. D. Grober; G. Pohlers; J. F. Cameron

J. Vac. Sci. Technol. B 20, 164–166 (2002) https://doi.org/10.1116/1.1431957

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Thermal agglomeration of single-crystalline Si layer on buried ${SiO}_{2}$ in ultrahigh vacuum

Ratno Nuryadi; Yasuhiko Ishikawa; Yukinori Ono; Michiharu Tabe

J. Vac. Sci. Technol. B 20, 167–172 (2002) https://doi.org/10.1116/1.1431956

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Suppressing boron penetration and cobalt silicide agglomeration in deep submicron p-channel metal–oxide–semiconductor devices

A. H. M. Kamal; A. T. Obeidat; T. Budri

J. Vac. Sci. Technol. B 20, 173–179 (2002) https://doi.org/10.1116/1.1431960

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Compact focusing system for ion and electron beams

J. Reijonen; Q. Ji; T.-J. King; K. N. Leung; A. Persaud; S. Wilde

J. Vac. Sci. Technol. B 20, 180–184 (2002) https://doi.org/10.1116/1.1431951

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Spatial distribution of reaction products in positive tone chemically amplified resists

Gerard M. Schmid; Michael D. Stewart; Vivek K. Singh; C. Grant Willson

J. Vac. Sci. Technol. B 20, 185–190 (2002) https://doi.org/10.1116/1.1431954

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Dry etching of amorphous-Si gates for deep sub-100 nm silicon-on-insulator complementary metal–oxide semiconductor

D. Yost; T. Forte; M. Fritze; D. Astolfi; V. Suntharalingam; C. K. Chen; S. Cann

J. Vac. Sci. Technol. B 20, 191–196 (2002) https://doi.org/10.1116/1.1431953

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Etch depth control in bulk GaAs using patterning and real time spectroscopic ellipsometry

Sang-Jun Cho; P. G. Snyder; C. M. Herzinger; B. Johs

J. Vac. Sci. Technol. B 20, 197–202 (2002) https://doi.org/10.1116/1.1431958

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Low turn-on voltage Mo-polycide field emitter arrays applied to field emission flat panel display

Hyung Soo Uh; Sang Sik Park; Jong Duk Lee

J. Vac. Sci. Technol. B 20, 203–208 (2002) https://doi.org/10.1116/1.1431959

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Alloy layer disorder in strained-layer InAs/GaInSb/AlSb superlattices with infrared laser applications

M. R. Kitchin; M. J. Shaw; J. P. Hagon; M. Jaros

J. Vac. Sci. Technol. B 20, 209–215 (2002) https://doi.org/10.1116/1.1432967

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells

C. Wetzel; J. Nelson; S. Kamiyama; H. Amano; I. Akasaki

J. Vac. Sci. Technol. B 20, 216–218 (2002) https://doi.org/10.1116/1.1432966

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Spectroscopic characterization of acid generation and concentration and free volume evolution in chemically amplified resists

J. L. P. Jessop; S. N. Goldie; A. B. Scranton; G. J. Blanchard

J. Vac. Sci. Technol. B 20, 219–225 (2002) https://doi.org/10.1116/1.1432969

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Ultrahigh vacuum scanning probe investigations of metal induced void formation in ${SiO}_{2} /Si (111)$

U. Håkanson; B. J. Ohlsson; L. Montelius; L. Samuelson

J. Vac. Sci. Technol. B 20, 226–229 (2002) https://doi.org/10.1116/1.1432968

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Activation of group III combinations in silicon and modifications introduced by nitrogen

S. Aronowitz; V. Zubkov; H. Puchner; J. Kimball

J. Vac. Sci. Technol. B 20, 230–237 (2002) https://doi.org/10.1116/1.1432970

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Field emission from chemical vapor deposition diamond surface with graphitic patches

J. B. Cui; J. Robertson

J. Vac. Sci. Technol. B 20, 238–242 (2002) https://doi.org/10.1116/1.1434972

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

High direct energy band gaps determination in ${In}_{x} {Al}_{1−x} As$ coherently grown on InP

Annalisa Convertino; Giuseppina Padeletti; Luciana Cerri; Sesto Viticoli

J. Vac. Sci. Technol. B 20, 243–245 (2002) https://doi.org/10.1116/1.1434974

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Heavy ion projection beam system for material modification at high ion energy

U. Weidenmüller; J. Meijer; A. Stephan; H. H. Bukow; E. Sossna; B. Volland; I. W. Rangelow

J. Vac. Sci. Technol. B 20, 246–249 (2002) https://doi.org/10.1116/1.1434975

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Bright peak enhanced x-ray clear phase mask

Lei Yang; Franco Cerrina; James W. Taylor

J. Vac. Sci. Technol. B 20, 250–256 (2002) https://doi.org/10.1116/1.1434973

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Strontium silicide termination and silicate epitaxy on (001) Si

D. P. Norton; C. Park; Y. E. Lee; J. D. Budai

J. Vac. Sci. Technol. B 20, 257–262 (2002) https://doi.org/10.1116/1.1434968

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effects of deposition temperature on the conduction mechanisms and reliability of radio frequency sputtered ${TiO}_{2}$ thin films

Shih-Fang Chen; Ching-Wu Wang

J. Vac. Sci. Technol. B 20, 263–270 (2002) https://doi.org/10.1116/1.1434971

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Modified design for fabrication of metal based single electron transistors

K. Hofmann; B. Spangenberg; H. Kurz

J. Vac. Sci. Technol. B 20, 271–273 (2002) https://doi.org/10.1116/1.1434969

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effects of photowashing treatment on electrical properties of a GaAs metal–semiconductor field-effect transistor

Kyoung Jin Choi; Jong-Lam Lee; Jae Kyoung Mun; Heacheon Kim

J. Vac. Sci. Technol. B 20, 274–277 (2002) https://doi.org/10.1116/1.1434970

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electron field emission from hydrogen-free amorphous carbon-coated ZnO tip array

D. S. Mao; X. Wang; W. Li; X. H. Liu; Q. Li; J. F. Xu

J. Vac. Sci. Technol. B 20, 278–281 (2002) https://doi.org/10.1116/1.1445166

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Dissociation of ${As}_{4}$ molecules during molecular beam epitaxy of GaAsP on $(n11) A$ and $(n11) B$ GaAs substrates

Y. Tatsuoka; M. Uemura; T. Kitada; S. Shimomura; S. Hiyamizu

J. Vac. Sci. Technol. B 20, 282–285 (2002) https://doi.org/10.1116/1.1445290

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Comparative evaluation of protective coatings and focused ion beam chemical vapor deposition processes

B. W. Kempshall; L. A. Giannuzzi; B. I. Prenitzer; F. A. Stevie; S. X. Da

J. Vac. Sci. Technol. B 20, 286–290 (2002) https://doi.org/10.1116/1.1445165

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Photoluminescence of GaSb self-assembled quantum dot layers grown by metalorganic chemical vapor deposition

Motlan; E. M. Goldys; L V. Dao

J. Vac. Sci. Technol. B 20, 291–294 (2002) https://doi.org/10.1116/1.1445167

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Accuracy evaluation of the point diffraction interferometer for extreme ultraviolet lithography aspheric mirror

K. Otaki; T. Yamamoto; Y. Fukuda; K. Ota; I. Nishiyama; S. Okazaki

J. Vac. Sci. Technol. B 20, 295–300 (2002) https://doi.org/10.1116/1.1445161

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

${CH}_{4}$ -based dry etching of high Q InP microdisks

Seung June Choi; Kostadin Djordjev; Sang Jun Choi; P. Daniel Dapkus

J. Vac. Sci. Technol. B 20, 301–305 (2002) https://doi.org/10.1116/1.1445164

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Incorporation of helium-implant-induced cavities near the active regions of metal–oxide–semiconductor devices: Effects on dc electrical characteristics

J. Terry; L. I. Haworth; A. M. Gundlach; J. T. M. Stevenson; V. M. Vishnyakov; S. E. Donnelly

J. Vac. Sci. Technol. B 20, 306–310 (2002) https://doi.org/10.1116/1.1445163

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Mechanical system construction for the EX-11 electron beam mask writer: A solution for 100 nm wafer lithography

Kiminobu Akeno; Munehiro Ogasawara; Toru Tojo

J. Vac. Sci. Technol. B 20, 311–315 (2002) https://doi.org/10.1116/1.1446452

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electrostatic mask protection for extreme ultraviolet lithography

Roel Moors; Gert-Jan Heerens

J. Vac. Sci. Technol. B 20, 316–320 (2002) https://doi.org/10.1116/1.1446451

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Investigation of breakdown characteristic of a novel plasma display panel discharge cell with rotationally symmetric structure

Yan Tu; Xiong Zhang; BaoPing Wang; Hanchun Yin; Linsu Tong

J. Vac. Sci. Technol. B 20, 321–325 (2002) https://doi.org/10.1116/1.1447248

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Microscopic characterization of electron field emission

L. Nilsson; O. Groening; O. Kuettel; P. Groening; L. Schlapbach

J. Vac. Sci. Technol. B 20, 326–337 (2002) https://doi.org/10.1116/1.1447241

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Measuring optical image aberrations with pattern and probe based targets

Garth Robins; Konstantinos Adam; Andrew Neureuther

J. Vac. Sci. Technol. B 20, 338–343 (2002) https://doi.org/10.1116/1.1447251

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effects of multilayer mask roughness on extreme ultraviolet lithography

Yunfei Deng; Tom Pistor; Andrew R. Neureuther

J. Vac. Sci. Technol. B 20, 344–349 (2002) https://doi.org/10.1116/1.1447252

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Fast closed loop control of piezoelectric transducers

Georg Schitter; Andreas Stemmer

J. Vac. Sci. Technol. B 20, 350–352 (2002) https://doi.org/10.1116/1.1447243

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Detection of chamber conditioning by ${CF}_{4}$ plasmas in an inductively coupled plasma reactor

Brett A. Cruden; M. V. V. S. Rao; Surendra P. Sharma; M. Meyyappan

J. Vac. Sci. Technol. B 20, 353–363 (2002) https://doi.org/10.1116/1.1447246

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Microfabrication of silicon tip structures for multiple-probe scanning tunneling microscopy

M. Bale; R. E. Palmer

J. Vac. Sci. Technol. B 20, 364–369 (2002) https://doi.org/10.1116/1.1447242

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Membrane mask magnification correction: Alternate technique

Ken-ichi Murooka; Michael H. Lim; Henry I. Smith

J. Vac. Sci. Technol. B 20, 370–372 (2002) https://doi.org/10.1116/1.1447244

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

BRIEF REPORTS AND COMMENTS

Ballistic electron emission microscopy of “on-surface” self-assembled InAs dots and wetting layers

D. Rakoczy; G. Strasser; J. Smoliner

J. Vac. Sci. Technol. B 20, 373–378 (2002) https://doi.org/10.1116/1.1430241

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Deep level centers in silicon introduced by high-energy He irradiation and subsequent annealing

Yoshitaka Nakano; Masayasu Ishiko; Hiroshi Tadano

J. Vac. Sci. Technol. B 20, 379–381 (2002) https://doi.org/10.1116/1.1430244

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Physical understanding of moisture induced degradation of nanoporous aluminum oxide thin films

R. K. Nahar

J. Vac. Sci. Technol. B 20, 382–385 (2002) https://doi.org/10.1116/1.1430243

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Fabrication of mesoscopic superconducting Nb wires using conventional electron-beam lithographic techniques

Nam Kim; Klavs Hansen; Jussi Toppari; Tarmo Suppula; Jukka Pekola

J. Vac. Sci. Technol. B 20, 386–388 (2002) https://doi.org/10.1116/1.1445168

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

RAPID COMMUNICATIONS

Template-directed vapor–liquid–solid growth of silicon nanowires

Kok-Keong Lew; Cordula Reuther; Altaf H. Carim; Joan M. Redwing; Benjamin R. Martin

J. Vac. Sci. Technol. B 20, 389–392 (2002) https://doi.org/10.1116/1.1430240

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Lateral force on fluoroalkylsilane self-assembled monolayers dependent on molecular ordering

Hiroyuki Sugimura; Kazuya Ushiyama; Atsushi Hozumi; Osamu Takai

J. Vac. Sci. Technol. B 20, 393–395 (2002) https://doi.org/10.1116/1.1431955

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Lower sheet/contact resistance in shallower junction obtained by F+B mixed implant

Jung-Ho Lee; Jeong-Youb Lee; In Seok Yeo; Seok-Kiu Lee

J. Vac. Sci. Technol. B 20, 396–399 (2002) https://doi.org/10.1116/1.1447247

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electrical characteristics of ultrathin ${ZrO}_{2}$ prepared by wet oxidation of an ultrathin Zr-metal layer

Sanghun Jeon; Hyunsang Hwang

J. Vac. Sci. Technol. B 20, 400–403 (2002) https://doi.org/10.1116/1.1447245

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

PAPERS FROM THE SIXTH INTERNATIONAL WORKSHOP ON FABRICATION, CHARACTERIZATION, AND MODELING OF ULTRA-SHALLOW DOPING PROFILES IN SEMICONDUCTORS

Technology CAD: Device simulation and characterization

T. Grasser; S. Selberherr

J. Vac. Sci. Technol. B 20, 407–413 (2002) https://doi.org/10.1116/1.1445162

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Two-dimensional effects on ultralow energy B implants in Si

F. Giannazzo; F. Priolo; V. Raineri; V. Privitera; A. Picariello; A. Battaglia; S. Moffat

J. Vac. Sci. Technol. B 20, 414–418 (2002) https://doi.org/10.1116/1.1424277

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Defect engineering: An approach on ultrashallow junction in silicon

Lin Shao; Xinming Lu; Xuemei Wang; Irene Rusakova; Jiarui Liu; Wei-Kan Chu

J. Vac. Sci. Technol. B 20, 419–421 (2002) https://doi.org/10.1116/1.1424283

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Study of reverse annealing behaviors of $p^{+} /n$ ultrashallow junction formed using solid phase epitaxial annealing

Jian-Yue Jin; Jinning Liu; Ukyo Jeong; Sandeep Mehta; Kevin Jones

J. Vac. Sci. Technol. B 20, 422–426 (2002) https://doi.org/10.1116/1.1424279

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Room-temperature evolution of vacancy-type damage created by 2 keV $B^{+}$ implantation of Si

R. M. Gwilliam; A. P. Knights; C. P. Burrows; P. G. Coleman

J. Vac. Sci. Technol. B 20, 427–430 (2002) https://doi.org/10.1116/1.1447249

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Nondestructive analysis of ultrashallow junction implant damage by combined technology of thermal wave and spectroscopic methods

Minna Hovinen; Jon Opsal

J. Vac. Sci. Technol. B 20, 431–435 (2002) https://doi.org/10.1116/1.1446453

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Quantitative determination of dopant dose in shallow implants using the low energy x-ray emission spectroscopy technique

P.-F. Staub; C. Hombourger; M. Schuhmacher

J. Vac. Sci. Technol. B 20, 436–440 (2002) https://doi.org/10.1116/1.1424282

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Quantitative analysis of nitrogen in oxynitrides on silicon by ${MCs}^{+}$ secondary ion mass spectrometry?

Y. Kataoka; M. Shigeno; K. Wittmaack

J. Vac. Sci. Technol. B 20, 441–447 (2002) https://doi.org/10.1116/1.1447250

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Backside sputter depth profiling of phosphorus diffusion from a polysilicon source

P. Ronsheim; D. Chidambarrao; B. Jagannathan; D. Hunt

J. Vac. Sci. Technol. B 20, 448–450 (2002) https://doi.org/10.1116/1.1424281

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Spreading resistance roadmap towards and beyond the 70 nm technology node

Wilfried Vandervorst; Trudo Clarysse; Pierre Eyben

J. Vac. Sci. Technol. B 20, 451–458 (2002) https://doi.org/10.1116/1.1446455

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Impact of probe penetration on the electrical characterization of sub-50 nm profiles

T. Clarysse; D. Vanhaeren; W. Vandervorst

J. Vac. Sci. Technol. B 20, 459–466 (2002) https://doi.org/10.1116/1.1432965

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Developments in ultrashallow spreading resistance analysis

David H. Dickey

J. Vac. Sci. Technol. B 20, 467–470 (2002) https://doi.org/10.1116/1.1446454

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Scanning spreading resistance microscopy and spectroscopy for routine and quantitative two-dimensional carrier profiling

P. Eyben; M. Xu; N. Duhayon; T. Clarysse; S. Callewaert; W. Vandervorst

J. Vac. Sci. Technol. B 20, 471–478 (2002) https://doi.org/10.1116/1.1424280

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Capacitance sensor with sub-zeptofarad ${(<10}^{−21}$ F) sensitivity for scanning capacitance microscopy

T. Tran; D. R. Oliver; D. J. Thomson; G. E. Bridges

J. Vac. Sci. Technol. B 20, 479–482 (2002) https://doi.org/10.1116/1.1424278

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Characterization of ultrashallow dopant profiles using spreading resistance profiling

L. S. Tan; L. C. P. Tan; M. S. Leong; R. G. Mazur; C. W. Ye

J. Vac. Sci. Technol. B 20, 483–487 (2002) https://doi.org/10.1116/1.1426370

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Product wafer monitoring of ultrashallow channel implants with an elastic metal gate

Robert J. Hillard; William H. Howland; Robert G. Mazur; Win Ye; Naushad K. Variam

J. Vac. Sci. Technol. B 20, 488–491 (2002) https://doi.org/10.1116/1.1424284

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Issues

REGULAR ARTICLES

BRIEF REPORTS AND COMMENTS

RAPID COMMUNICATIONS

PAPERS FROM THE SIXTH INTERNATIONAL WORKSHOP ON FABRICATION, CHARACTERIZATION, AND MODELING OF ULTRA-SHALLOW DOPING PROFILES IN SEMICONDUCTORS

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only