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Issues
October 1984
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
ISSN 0734-211X
EISSN 2327-9877
Effect of ion sputtering on interface chemistry and electrical properties of Au GaAs(100) Schottky contacts
J. Vac. Sci. Technol. B 2, 613–619 (1984)
https://doi.org/10.1116/1.582851
A nonalloyed, low specific resistance Ohmic contact to n‐InP
J. Vac. Sci. Technol. B 2, 620–625 (1984)
https://doi.org/10.1116/1.582847
Surface silicon oxynitride films obtained by implanting mixtures of oxygen and nitrogen ions into silicon
J. Vac. Sci. Technol. B 2, 626–629 (1984)
https://doi.org/10.1116/1.582852
Influence of slight deviations from TaSi2 stoichiometry on the high‐temperature stability of tantalum silicide/silicon contacts
J. Vac. Sci. Technol. B 2, 630–635 (1984)
https://doi.org/10.1116/1.582853
Low defect density insulating films deposited on room temperature substrates
J. H. Magerlein; John M. Baker; G. R. Proto; K. R. Grebe; S. P. Klepner; M. J. Palmer; A. J. Warnecke
J. Vac. Sci. Technol. B 2, 636–640 (1984)
https://doi.org/10.1116/1.582854
An experimental system for surface reaction studies in microwave plasma etching
J. Vac. Sci. Technol. B 2, 645–652 (1984)
https://doi.org/10.1116/1.582856
Influences of molecular reflection on the lift‐off pattern edge quality
J. Vac. Sci. Technol. B 2, 658–664 (1984)
https://doi.org/10.1116/1.582858
Resolution of a three‐layer resist using heavy metal as an intermediate layer
J. Vac. Sci. Technol. B 2, 665–669 (1984)
https://doi.org/10.1116/1.582859
Photoemission studies of the interaction of hydrogen plasmas with GaAs(001)
J. Vac. Sci. Technol. B 2, 675–680 (1984)
https://doi.org/10.1116/1.582861
Large surface Fermi level shift in high temperature annealed metal–insulator–GaAs structures prepared in the presence of oxygen
J. Vac. Sci. Technol. B 2, 681–683 (1984)
https://doi.org/10.1116/1.582862
Selective and anisotropic reactive ion etch of LPCVD silicon nitride with CHF3 based gases
J. Vac. Sci. Technol. B 2, 684–687 (1984)
https://doi.org/10.1116/1.582863
Effects of deposition parameters on the growth of thermal oxide on silicides over single crystal silicon
J. Vac. Sci. Technol. B 2, 707–709 (1984)
https://doi.org/10.1116/1.582865
Thermal‐wave measurements and monitoring of TaSix silicide film properties
J. Vac. Sci. Technol. B 2, 710–713 (1984)
https://doi.org/10.1116/1.582866
Dopant redistribution in silicides: Materials and process issues
J. Vac. Sci. Technol. B 2, 718–722 (1984)
https://doi.org/10.1116/1.582868
Application of titanium polycide interconnects in a silicon‐gate process
J. Vac. Sci. Technol. B 2, 730–732 (1984)
https://doi.org/10.1116/1.582870
Applications of Rutherford backscattering spectrometry to refractory metal silicide characterization
J. Vac. Sci. Technol. B 2, 748–755 (1984)
https://doi.org/10.1116/1.582873
Microstructural investigations of refractory metal silicide films on silicon
T. J. Magee; G. R. Woolhouse; H. A. Kawayoshi; I. C. Niemeyer; B. Rodrigues; R. D. Ormond; A. S. Bhandia
J. Vac. Sci. Technol. B 2, 756–761 (1984)
https://doi.org/10.1116/1.582874
Stoichiometric shifts in cosputtered refractory silicide films during subsequent heat treatment
J. Vac. Sci. Technol. B 2, 766–770 (1984)
https://doi.org/10.1116/1.582876
Sputtering of refractory metal silicides from composite cathodes used in the Varian 3180/3190 sputtering system
J. Vac. Sci. Technol. B 2, 771–774 (1984)
https://doi.org/10.1116/1.582877
Influence of the interfacial oxide on titanium silicide formation by rapid thermal annealing
J. Vac. Sci. Technol. B 2, 775–780 (1984)
https://doi.org/10.1116/1.582878
Overview of coating technologies for large scale metallurgical, optical, and electronic applications
J. Vac. Sci. Technol. B 2, 789–799 (1984)
https://doi.org/10.1116/1.582880
Diffusion coatings of steels: Formation mechanism and microstructure of aluminized heat‐resistant stainless steels
J. Vac. Sci. Technol. B 2, 806–815 (1984)
https://doi.org/10.1116/1.582882
Xerographic photoreceptors
J. Vac. Sci. Technol. B 2, 823–826 (1984)
https://doi.org/10.1116/1.582884
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.