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Negative resist profiles in x‐ray lithography

Yoshiki Suzuki; Nobuyuki Yoshioka; Teruhiko Yamazaki

J. Vac. Sci. Technol. B 2, 301–305 (1984) https://doi.org/10.1116/1.582813

Abstract

View articletitled, Negative resist profiles in x‐ray lithography

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A low‐energy, ultrahigh vacuum, solid‐metal ion source for accelerated‐ion doping during molecular beam epitaxy

A. Rockett; S. A. Barnett; J. E. Greene

J. Vac. Sci. Technol. B 2, 306–313 (1984) https://doi.org/10.1116/1.582814

Abstract

View articletitled, A low‐energy, ultrahigh vacuum, solid‐metal ion source for accelerated‐ion doping during molecular beam epitaxy

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Interface properties of Al–SiO₂–In_0.53Ga_0.47As MIS devices

C. C. Shen; K. P. Pande

J. Vac. Sci. Technol. B 2, 314–315 (1984) https://doi.org/10.1116/1.582815

Abstract

View articletitled, Interface properties of Al–SiO2–In0.53Ga0.47As MIS devices

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Thermal nitridation of silicon: An XPS and LEED investigation

C. Maillot; H. Roulet; G. Dufour

J. Vac. Sci. Technol. B 2, 316–319 (1984) https://doi.org/10.1116/1.582816

Abstract

View articletitled, Thermal nitridation of silicon: An XPS and LEED investigation

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Vacuum evaporation system for depositing thick polycrystalline silicon

Yusuke Ota; Raymond A. Clapper

J. Vac. Sci. Technol. B 2, 320–326 (1984) https://doi.org/10.1116/1.582817

Abstract

View articletitled, Vacuum evaporation system for depositing thick polycrystalline silicon

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Displacements parallel to the surface of reconstructed GaAs(110)

C. B. Duke; A. Paton

J. Vac. Sci. Technol. B 2, 327–331 (1984) https://doi.org/10.1116/1.582818

Abstract

View articletitled, Displacements parallel to the surface of reconstructed GaAs(110)

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A method of mounting small samples for surface analysis

Paul L. Gutshall

J. Vac. Sci. Technol. B 2, 332 (1984) https://doi.org/10.1116/1.582819

View articletitled, A method of mounting small samples for surface analysis

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Investigation of the surface structure of GaAs(110) by high energy ion channeling

H.‐J. Gossmann; W. M. Gibson

J. Vac. Sci. Technol. B 2, 343–345 (1984) https://doi.org/10.1116/1.582820

Abstract

View articletitled, Investigation of the surface structure of GaAs(110) by high energy ion channeling

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High resolution measurement of the step distribution at the Si/SiO₂ interface

M. Henzler; P. Marienhoff

J. Vac. Sci. Technol. B 2, 346–348 (1984) https://doi.org/10.1116/1.582821

Abstract

View articletitled, High resolution measurement of the step distribution at the Si/SiO2 interface

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Summary Abstract: Direct observation of band mixing in GaAs–(Al_xGa_1−x)As quantum heterostructures

R. Sooryakumar; D. S. Chemla; A. Pinczuk; A. Gossard; W. Weigmann; L. J. Sham

J. Vac. Sci. Technol. B 2, 349–350 (1984) https://doi.org/10.1116/1.582822

View articletitled, Summary Abstract: Direct observation of band mixing in GaAs–(AlxGa1−x)As quantum heterostructures

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The oxidation of GaAs(110): A reevaluation

G. Landgren; R. Ludeke; Y. Jugnet; J. F. Morar; F. J. Himpsel

J. Vac. Sci. Technol. B 2, 351–358 (1984) https://doi.org/10.1116/1.582823

Abstract

View articletitled, The oxidation of GaAs(110): A reevaluation

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Adsorption of H, O, and H₂O at Si(100) and Si(111) surfaces in the monolayer range: A combined EELS, LEED, and XPS study

J. A. Schaefer; F. Stucki; D. J. Frankel; W. Göpel; G. J. Lapeyre

J. Vac. Sci. Technol. B 2, 359–365 (1984) https://doi.org/10.1116/1.582824

Abstract

View articletitled, Adsorption of H, O, and H2O at Si(100) and Si(111) surfaces in the monolayer range: A combined EELS, LEED, and XPS study

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The ZnSe(110) puzzle: Comparison with GaAs(110)

C. B. Duke; A. Paton; A. Kahn; D‐W Tu

J. Vac. Sci. Technol. B 2, 366–370 (1984) https://doi.org/10.1116/1.582825

Abstract

View articletitled, The ZnSe(110) puzzle: Comparison with GaAs(110)

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New approach to the k⋅ p theory of semiconductor superlattices

C. Mailhiot; T. C. McGill; D. L. Smith

J. Vac. Sci. Technol. B 2, 371–375 (1984) https://doi.org/10.1116/1.582826

Abstract

View articletitled, New approach to the k⋅ p theory of semiconductor superlattices

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Binding energies of acceptors in GaAs–Al_xGa_1−xAs quantum wells

W. T. Masselink; Yia‐Chung Chang; H. Morkoç

J. Vac. Sci. Technol. B 2, 376–382 (1984) https://doi.org/10.1116/1.582827

Abstract

View articletitled, Binding energies of acceptors in GaAs–AlxGa1−xAs quantum wells

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Summary Abstract: (110) surface geometry of GaAs

D. J. Chadi

J. Vac. Sci. Technol. B 2, 383 (1984) https://doi.org/10.1116/1.582828

View articletitled, Summary Abstract: (110) surface geometry of GaAs

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High resolution electron energy loss studies of Fermi level states of clean and metallized Si(111) surfaces

J. E. Demuth; B. N. J. Persson

J. Vac. Sci. Technol. B 2, 384–389 (1984) https://doi.org/10.1116/1.582829

Abstract

View articletitled, High resolution electron energy loss studies of Fermi level states of clean and metallized Si(111) surfaces

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Electronic states of the (100) (2×1) reconstructed Ge surface

David V. Froelich; Marshall A. Bowen; John D. Dow

J. Vac. Sci. Technol. B 2, 390–392 (1984) https://doi.org/10.1116/1.582830

Abstract

View articletitled, Electronic states of the (100) (2×1) reconstructed Ge surface

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The geometric structures of the GaAs(111) and (110) surfaces

S. Y. Tong; W. N. Mei; G. Xu

J. Vac. Sci. Technol. B 2, 393–398 (1984) https://doi.org/10.1116/1.582831

Abstract

View articletitled, The geometric structures of the GaAs(111) and (110) surfaces

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Summary Abstract: Total‐energy study of the vacancy model for the GaAs(111) surface

D. J. Chadi

J. Vac. Sci. Technol. B 2, 399 (1984) https://doi.org/10.1116/1.582832

View articletitled, Summary Abstract: Total‐energy study of the vacancy model for the GaAs(111) surface

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Morphological and chemical considerations for the epitaxy of metals on semiconductors

R. Ludeke

J. Vac. Sci. Technol. B 2, 400–406 (1984) https://doi.org/10.1116/1.582833

Abstract

View articletitled, Morphological and chemical considerations for the epitaxy of metals on semiconductors

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Summary Abstract: Ge deposition on Si(111)‐7×7 and Si(100)‐2×1: Effects on Si surface structure

H.‐J. Gossmann; L. C. Feldman; W. M. Gibson

J. Vac. Sci. Technol. B 2, 407–408 (1984) https://doi.org/10.1116/1.582834

View articletitled, Summary Abstract: Ge deposition on Si(111)‐7×7 and Si(100)‐2×1: Effects on Si surface structure

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Heats of solution and substitution in semiconductors

Edgar A. Kraut; Walter A. Harrison

J. Vac. Sci. Technol. B 2, 409–414 (1984) https://doi.org/10.1116/1.582835

Abstract

View articletitled, Heats of solution and substitution in semiconductors

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Summary Abstract: Ge–GaAs heterostructures: From chemisorption to heterojunction interface formation

P. Krüger; J. Pollmann

J. Vac. Sci. Technol. B 2, 415–416 (1984) https://doi.org/10.1116/1.582885

View articletitled, Summary Abstract: Ge–GaAs heterostructures: From chemisorption to heterojunction interface formation

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Summary Abstract: Growth of high quality (100)CdTe films on (100)GaAs substrates by molecular beam epitaxy

R. N. Bicknell; N. C. Giles‐Taylor; R. W. Yanka; J. F. Schetzina; T. J. Magee; C. Leung; H. Kawayoski; G. R. Woolhouse

J. Vac. Sci. Technol. B 2, 417–418 (1984) https://doi.org/10.1116/1.582886

View articletitled, Summary Abstract: Growth of high quality (100)CdTe films on (100)GaAs substrates by molecular beam epitaxy

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RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain‐induced effects during InGaAs growth on GaAs(100)

B. F. Lewis; T. C. Lee; F. J. Grunthaner; A. Madhukar; R. Fernandez; J. Maserjian

J. Vac. Sci. Technol. B 2, 419–424 (1984) https://doi.org/10.1116/1.582887

Abstract

View articletitled, RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain‐induced effects during InGaAs growth on GaAs(100)

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Summary Abstract: Thermodynamics of monolayer formation on an impure substrate

P. Gelband; S. Doniach

J. Vac. Sci. Technol. B 2, 425–426 (1984) https://doi.org/10.1116/1.582888

View articletitled, Summary Abstract: Thermodynamics of monolayer formation on an impure substrate

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A theoretical study of the epitaxial growth of metal overlayers on semiconductor surfaces

Inder P. Batra; S. Ciraci

J. Vac. Sci. Technol. B 2, 427–432 (1984) https://doi.org/10.1116/1.582889

Abstract

View articletitled, A theoretical study of the epitaxial growth of metal overlayers on semiconductor surfaces

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Barrier control and measurements: Abrupt semiconductor heterojunctions

Herbert Kroemer

J. Vac. Sci. Technol. B 2, 433–439 (1984) https://doi.org/10.1116/1.582890

Abstract

View articletitled, Barrier control and measurements: Abrupt semiconductor heterojunctions

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Band offsets, defects, and dipole layers in semiconductor heterojunctions

A. Zur; T. C. McGill

J. Vac. Sci. Technol. B 2, 440–444 (1984) https://doi.org/10.1116/1.582891

Abstract

View articletitled, Band offsets, defects, and dipole layers in semiconductor heterojunctions

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Electrical properties of ideal metal contacts to GaAs: Schottky‐barrier height

J. R. Waldrop

J. Vac. Sci. Technol. B 2, 445–448 (1984) https://doi.org/10.1116/1.582892

Abstract

View articletitled, Electrical properties of ideal metal contacts to GaAs: Schottky‐barrier height

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Theory of surface‐defect states and Schottky barrier heights: Application to InAs

Roland E. Allen; Terry J. Humphreys; John D. Dow; Otto F. Sankey

J. Vac. Sci. Technol. B 2, 449–452 (1984) https://doi.org/10.1116/1.582893

Abstract

View articletitled, Theory of surface‐defect states and Schottky barrier heights: Application to InAs

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Systematics of interfacial chemical reactions on InP(110)

T. Kendelewicz; W. G. Petro; I. Lindau; W. E. Spicer

J. Vac. Sci. Technol. B 2, 453–458 (1984) https://doi.org/10.1116/1.582894

Abstract

View articletitled, Systematics of interfacial chemical reactions on InP(110)

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Nonuniform surface potentials and their observation by surface sensitive techniques

J. Y.‐F. Tang; J. L. Freeouf

J. Vac. Sci. Technol. B 2, 459–464 (1984) https://doi.org/10.1116/1.582895

Abstract

View articletitled, Nonuniform surface potentials and their observation by surface sensitive techniques

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Schottky barrier heights of single crystal silicides on Si(111)

R. T. Tung

J. Vac. Sci. Technol. B 2, 465–470 (1984) https://doi.org/10.1116/1.582896

Abstract

View articletitled, Schottky barrier heights of single crystal silicides on Si(111)

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Fermi level position and valence band discontinuity at GaAs/Ge interfaces

A. D. Katnani; P. Chiaradia; H. W. Sang, Jr.; R. S. Bauer

J. Vac. Sci. Technol. B 2, 471–475 (1984) https://doi.org/10.1116/1.582897

Abstract

View articletitled, Fermi level position and valence band discontinuity at GaAs/Ge interfaces

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Metallic and atomic approximations at the Schottky barrier interfaces

W. E. Spicer; S. Pan; D. Mo; N. Newman; P. Mahowald; T. Kendelewicz; S. Eglash

J. Vac. Sci. Technol. B 2, 476–480 (1984) https://doi.org/10.1116/1.582898

Abstract

View articletitled, Metallic and atomic approximations at the Schottky barrier interfaces

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Aluminum Schottky barrier formation on arsenic capped and heat cleaned MBE GaAs(100)

Stephen J. Eglash; M. D. Williams; P. H. Mahowald; Nathan Newman; Ingolf Lindau; W. E. Spicer

J. Vac. Sci. Technol. B 2, 481–485 (1984) https://doi.org/10.1116/1.582899

Abstract

View articletitled, Aluminum Schottky barrier formation on arsenic capped and heat cleaned MBE GaAs(100)

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Heterojunction band off‐sets: Variation with ionization potential compared to experiment

Edgar A. Kraut

J. Vac. Sci. Technol. B 2, 486–490 (1984) https://doi.org/10.1116/1.582900

Abstract

View articletitled, Heterojunction band off‐sets: Variation with ionization potential compared to experiment

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Theory of Schottky barrier formation for transition metals on Si, Ge, diamond, and Si_x Ge_1−x alloys

Otto F. Sankey; Roland E. Allen; John D. Dow

J. Vac. Sci. Technol. B 2, 491–495 (1984) https://doi.org/10.1116/1.582901

Abstract

View articletitled, Theory of Schottky barrier formation for transition metals on Si, Ge, diamond, and Six Ge1−x alloys

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Interfacial constraints on device performance

D. L. Lile

J. Vac. Sci. Technol. B 2, 496–503 (1984) https://doi.org/10.1116/1.582806

Abstract

View articletitled, Interfacial constraints on device performance

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The role of interfaces in ultrasmall semiconductor devices

D. K. Ferry

J. Vac. Sci. Technol. B 2, 504–509 (1984) https://doi.org/10.1116/1.582807

Abstract

View articletitled, The role of interfaces in ultrasmall semiconductor devices

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Summary Abstract: Surface treatment and interface properties: What really matters?

J. M. Woodall; J. L. Freeouf

J. Vac. Sci. Technol. B 2, 510–511 (1984) https://doi.org/10.1116/1.582808

View articletitled, Summary Abstract: Surface treatment and interface properties: What really matters?

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Surface properties of semi‐insulating indium phosphide

James W. Roach; H. H. Wieder

J. Vac. Sci. Technol. B 2, 512–515 (1984) https://doi.org/10.1116/1.582809

Abstract

View articletitled, Surface properties of semi‐insulating indium phosphide

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Influence of interfacial structure on the electronic properties of SiO₂/InP MISFET’s

K. M. Geib; S. M. Goodnick; D. Y. Lin; R. G. Gann; C. W. Wilmsen; J. F. Wager

J. Vac. Sci. Technol. B 2, 516–521 (1984) https://doi.org/10.1116/1.582810

Abstract

View articletitled, Influence of interfacial structure on the electronic properties of SiO2/InP MISFET’s

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High mobility insulated gate transistors on InP

M. J. Taylor; D. L. Lile; A. K. Nedoluha

J. Vac. Sci. Technol. B 2, 522–526 (1984) https://doi.org/10.1116/1.582811

Abstract

View articletitled, High mobility insulated gate transistors on InP

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Structural dependent electrical characteristics of submicron gallium arsenide devices

H. L. Grubin; J. P. Kreskovsky

J. Vac. Sci. Technol. B 2, 527–533 (1984) https://doi.org/10.1116/1.582812

Abstract

View articletitled, Structural dependent electrical characteristics of submicron gallium arsenide devices

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Computer simulations of surfaces, interfaces, and physisorbed films

Farid F. Abraham

J. Vac. Sci. Technol. B 2, 534–549 (1984) https://doi.org/10.1116/1.582836

Abstract

View articletitled, Computer simulations of surfaces, interfaces, and physisorbed films

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Classical stochastic diffusion theory for thermal desorption from solid surfaces

Antonio Redondo; Yehuda Zeiri; William A. Goddard, III

J. Vac. Sci. Technol. B 2, 550–560 (1984) https://doi.org/10.1116/1.582837

Abstract

View articletitled, Classical stochastic diffusion theory for thermal desorption from solid surfaces

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Metal contacts on semiconductors: The adsorption of Sb, Sn, and Ga on InP(110) cleaved surfaces

R. H. Williams; A. McKinley; G. J. Hughes; T. P. Humphreys; C. Maani

J. Vac. Sci. Technol. B 2, 561–568 (1984) https://doi.org/10.1116/1.582838

Abstract

View articletitled, Metal contacts on semiconductors: The adsorption of Sb, Sn, and Ga on InP(110) cleaved surfaces

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Effect of interfaces upon atomic diffusion: Si and Zn in GaAs

J. A. Van Vechten

J. Vac. Sci. Technol. B 2, 569–572 (1984) https://doi.org/10.1116/1.582839

Abstract

View articletitled, Effect of interfaces upon atomic diffusion: Si and Zn in GaAs

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Effective potentials for kinetic processes on semiconductor surfaces

S. C. Ying; T. L. Reinecke

J. Vac. Sci. Technol. B 2, 573–575 (1984) https://doi.org/10.1116/1.582840

Abstract

View articletitled, Effective potentials for kinetic processes on semiconductor surfaces

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Theoretical investigations of the nature of the normal and inverted GaAs–AlGaAs structures grown by molecular beam epitaxy

Jasprit Singh; K. K. Bajaj

J. Vac. Sci. Technol. B 2, 576–581 (1984) https://doi.org/10.1116/1.582841

Abstract

View articletitled, Theoretical investigations of the nature of the normal and inverted GaAs–AlGaAs structures grown by molecular beam epitaxy

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Summary Abstract: Unusual interfacial kinetics and Schottky barrier formation of thallium on the GaAs(110) surface

T. Kendelewicz; W. G. Petro; I. Lindau; W. E. Spicer

J. Vac. Sci. Technol. B 2, 582–583 (1984) https://doi.org/10.1116/1.582842

View articletitled, Summary Abstract: Unusual interfacial kinetics and Schottky barrier formation of thallium on the GaAs(110) surface

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SiO₂/InP interfaces with reduced interface state density

J. F. Wager; M. D. Clark; R. A. Jullens

J. Vac. Sci. Technol. B 2, 584–587 (1984) https://doi.org/10.1116/1.582843

Abstract

View articletitled, SiO2/InP interfaces with reduced interface state density

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Summary Abstract: Two‐stage process for silicide formation at metal–silicon interfaces

R. J. Nemanich; B. L. Stafford; W. B. Jackson; M. J. Thompson; J. R. Abelson; T. W. Sigmon

J. Vac. Sci. Technol. B 2, 588 (1984) https://doi.org/10.1116/1.582848

View articletitled, Summary Abstract: Two‐stage process for silicide formation at metal–silicon interfaces

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Summary Abstract: Activated oxygen uptake on HgTe, CdTe, and Hg_0.69Cd_0.31Te

J. A. Silberman; D. Laser; I. Lindau; W. E. Spicer; J. A. Wilson

J. Vac. Sci. Technol. B 2, 589–590 (1984) https://doi.org/10.1116/1.582849

View articletitled, Summary Abstract: Activated oxygen uptake on HgTe, CdTe, and Hg0.69Cd0.31Te

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Control and characterization of metal–InP and GaAs interface structures formed by laser‐enhanced reactions

H. W. Richter; L. J. Brillson; M. K. Kelley; R. R. Daniels; G. Margaritondo

J. Vac. Sci. Technol. B 2, 591–595 (1984) https://doi.org/10.1116/1.582850

Abstract

View articletitled, Control and characterization of metal–InP and GaAs interface structures formed by laser‐enhanced reactions

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Summary Abstract: Fractional quantum effect in transport along the GaAs–Al_xGa_1−xAs interface

D. C. Tsui

J. Vac. Sci. Technol. B 2, 596 (1984) https://doi.org/10.1116/1.582844

View articletitled, Summary Abstract: Fractional quantum effect in transport along the GaAs–AlxGa1−xAs interface

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Summary Abstract: Elastic and inelastic tunneling characteristics of AlAs/GaAs heterojunctions

R. T. Collins; J. Lambe; T. C. McGill; R. D. Burnham

J. Vac. Sci. Technol. B 2, 597–598 (1984) https://doi.org/10.1116/1.582845

View articletitled, Summary Abstract: Elastic and inelastic tunneling characteristics of AlAs/GaAs heterojunctions

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Electrical characterization of the GaAs/Al_xGa_1−xAs interface by conductance DLTS

G. N. Maracas; W. D. Laidig; H. R. Wittmann

J. Vac. Sci. Technol. B 2, 599–603 (1984) https://doi.org/10.1116/1.582846

Abstract

View articletitled, Electrical characterization of the GaAs/AlxGa1−xAs interface by conductance DLTS

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